High peak power low threshold AlGaAs/GaAs stripe laser diodes on Si substrates by hybrid MBE/MOCVD growth (English)
- New search for: Kim, J. H.
- New search for: Nouhi, A.
- New search for: Radhakrishnan, G.
- New search for: Katz, J.
- New search for: SPIE
- New search for: Kim, J. H.
- New search for: Nouhi, A.
- New search for: Radhakrishnan, G.
- New search for: Katz, J.
- New search for: Craighead, H. G.
- New search for: Narayan, J.
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In:
Advanced processing of semiconductor devices II
945
;
155-161
;
1988
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ISBN:
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ISSN:
- Conference paper / Print
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Title:High peak power low threshold AlGaAs/GaAs stripe laser diodes on Si substrates by hybrid MBE/MOCVD growth
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Contributors:Kim, J. H. ( author ) / Nouhi, A. ( author ) / Radhakrishnan, G. ( author ) / Katz, J. ( author ) / Craighead, H. G. / Narayan, J. / SPIE
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Conference:2nd Conference, Advanced processing of semiconductor devices II ; 1988 ; Newport Beach; CA
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Published in:Advanced processing of semiconductor devices II , 945 ; 155-161
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Publisher:
- New search for: SPIE
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Place of publication:Bellingham, Wash., USA
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Publication date:1988-01-01
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Size:7 pages
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2
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Reactive Ion Etching Of Laser StructuresVawter, G. Allen et al. | 1988
- 9
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Multilevel Interconnects For Integrated Circuits With Submicron Design RulesWilson, S. R. / Mattox, R. J. / Seeger, J. et al. | 1988
- 18
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Low Thermal Expansion Polyimide Buried Ridge-Waveguide AlGaAs Laser DiodeSato, Fumihiko / Imamoto, Hiroshi / Imanaka, Koichi / Shimura, Mikihiko et al. | 1988
- 22
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Studies Of Ion Beam Enhanced Mixing Of AlGaAs SuperlatticesMei, P. / Schwarz, S. A. / Venkatesan, T. / Stoffel, N. G. / Harbison, J. P. et al. | 1988
- 32
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Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)Sharan, S. / Narayan, J. / Lee, J. W. / Fan, J. C. C. et al. | 1988
- 32
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Comparison of defects in GaAs epilayers grown on Si by MBE and OMCVD: as-grown and after rapid thermal annealingSharan, S. / Narayan, J. / Lee, J. W. / Fan, J. C. C. / SPIE et al. | 1988
- 41
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Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser AnnealingRys, Andrzej / Chin, Tim / Compaan, Alvin / Bhat, Ajit et al. | 1988
- 49
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Growth Of Compound Semiconductor By Atomic Layer Epitaxy And ApplicationsBedair, Salah M. et al. | 1988
- 51
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In-situ MBE regrowth of ion beam etched GaAs/AlGaAs heterostructuresScherer, A. / Harbison, J. P. / Hwang, D. M. / Beebe, E. D. / SPIE et al. | 1988
- 51
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In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs HeterostructuresScherer, A. / Harbison, J. P. .. / Hwang, D. M. / Beebe, E. D. .. et al. | 1988
- 55
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Photochemical Vapor Deposition Of Gallium ArsenideNorton, D. P. / Ajmera, P. K. et al. | 1988
- 62
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Plasmon Amplification In Semiconductor SuperlatticesKempa, K. / Bakshi, P. / Cen, J. et al. | 1988
- 68
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Synthesis Of The Multialkali Photocathodes By Molecular Beam EpitaxyBalanyuk, V. V. / Chernikov, A. S. / Krasnov, V. F. / Musher, S. L. / Ryabchenko, V. E. / Prokhorov, A. M. / Dubovoi, I. A. / Ushakov, V. K. / Schelev, M. Y. et al. | 1988
- 72
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Rapid isothermal processing of dielectricsSingh, R. / Radpour, F. / SPIE et al. | 1988
- 72
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Rapid Isothermal Processing (RIP) Of DielectricsSingh, R. / Radpour, F. et al. | 1988
- 84
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Processing and characterization of thin films of SiO~2 on Si for integrated circuitsRavindra, N. M. / Carr, W. N. / Russo, O. L. / Fathy, D. / SPIE et al. | 1988
- 84
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Processing & Characterization Of Thin Films Of SiO2On Si For Integrated CircuitsRavindra, N. M. / Carr, W. N. / Russo, O. L. / Fathy, D. / Heyd, A. R. / Vedam, K. / Narayan, J. et al. | 1988
- 97
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Laser Processing Of Semiconductors - A Production MachineBurns, Leslie L. / Elsea, Arthur R. et al. | 1988
- 103
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Reactive Ion Etching Of A Multicomponent Glass SubstrateKuo, Yue / Crowe, J. R. et al. | 1988
- 111
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In-Situ Rapid Isothermal Processing Of II-A Fluorides On SiliconSingh, R. / Radpour, F. / Narayan, J. et al. | 1988
- 118
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Langmuir-Blodgett Deposited Gates For InP-InGaAs Field Effect TransistorsChan, Winston K. / Cox, Herbert M. / Abeles, Joseph H. / Kelty, Stephen P. et al. | 1988
- 126
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Characterization Of Isolated Silicon Epitaxy MaterialAllen, L. T. P. / Batty, M. W. / Henderson, W. R. / Jersey, T. E. / Vu, D. P. / Zavracky, P. M. / Narayan, J. et al. | 1988
- 131
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Effects Of Rapid Thermal Postoxidation Of Rapid Thermally Nitrided OxidesLee, S. / Shih, D. K. / Kwong, D. L. et al. | 1988
- 137
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Nanofabrication Of Quantum Coupled DevicesRandall, J. N. / Reed, M. A. / Matyi, R. J. / Moore, T. M. / Aggarwal, R. J. / Wetsel, A. E. et al. | 1988
- 146
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Defects And Interfaces In Zone Melt Recrystallized SiliconSrivatsa, A. R. / Narayan, J. / Zavacky, P. M. et al. | 1988
- 151
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Impurity Phase Transitions In Silicon Emitter JunctionsAndersson, Gert I. / Engstrom, Olof et al. | 1988
- 155
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High Peak Power Low Threshold AlGaAs/GaAs Stripe Laser Diodes On Si Substrates By Hybrid MBE/MOCVD GrowthKim, J. H. / Nouhi, A. / Radhakrishnan, G. / Katz, J. et al. | 1988