Ion implantation, low and high temperature ion-beam mixing: different routes for amorphous phase formation in metallic systems (English)
- New search for: Thome, L.
- New search for: Jagielski, J.
- New search for: Thome, L.
- New search for: Jagielski, J.
- New search for: Coffa, S.
In:
Ion implantation technology 94
;
906-909
;
1995
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ISBN:
- Conference paper / Print
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Title:Ion implantation, low and high temperature ion-beam mixing: different routes for amorphous phase formation in metallic systems
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Contributors:
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Conference:10th International conference, Ion implantation technology 94 ; 1994 ; Catania; Italy
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Published in:Ion implantation technology 94 ; 906-909
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Publisher:
- New search for: Elsevier
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Publication date:1995-01-01
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Size:4 pages
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Remarks:xvii, 1012p; Also known as IIT 94; Described as proceedings. See also 6180.86132 vol 96 no 1-2 1995 for selected papers
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Ion implantation from the past and into the futureMoffatt, S. et al. | 1995
- 7
-
Negative-ion implantation techniqueIshikawa, J. / Tsuji, H. / Toyota, Y. / Gotoh, Y. et al. | 1995
- 13
-
Beam energy purity in the Eaton NV-8200P ion implanterKamenitsa, D. E. / Rathmell, R. D. et al. | 1995
- 18
-
Using a wedge oxide to monitor low energy beam purity by means of Therma-Wave measurements in the Eaton NV-8200P ion implanterKamenitsa, D. E. / Pearce, N. O. et al. | 1995
- 22
-
Charge neutralization in ion implantersSmatlak, D. L. / Mack, M. E. / Mehta, S. et al. | 1995
- 30
-
The precision implant 9500 plasma flood system - the advanced solution to wafer chargingIto, H. / Kamata, T. / England, J. / Fotheringham, I. et al. | 1995
- 34
-
Surface charge control during high-current ion implantation: characterization with CHARM-2 sensorsCurrent, M. I. / Lukaszek, W. / Velle, M. C. / Tripsas, N. H. et al. | 1995
- 39
-
Charged particle energy spectrometers and their applications in fundamental studies of wafer charging and ion beam tuning phenomenaEngland, J. G. / Cook, C. E. A. / Armour, D. G. / Foad, M. A. et al. | 1995
- 43
-
The charging mechanism of insulated electrode in negative-ion implantationSakai, S. / Gotoh, Y. / Tsuji, H. / Toyota, Y. et al. | 1995
- 48
-
Plasma model for charging damageVella, M. C. / Lukaszek, W. / Current, M. I. / Tripsas, N. H. et al. | 1995
- 52
-
Studies of water surface charging using the THOR monitor deviceMalone, P. / Shull, W. / England, J. G. / Fotheringham, I. et al. | 1995
- 56
-
Generation and transport of contamination in high current implantersBlake, J. / Jones, M. / Meyyappan, N. / Hirokawa, S. et al. | 1995
- 62
-
ULSI-process demands of contamination control on ion implantationNatsuaki, N. / Kamata, T. / Kondo, K. / Kureishi, Y. et al. | 1995
- 68
-
Metals contamination in high and medium current implantersDowney, D. F. / Angel, G. C. et al. | 1995
- 75
-
Effects of energy, dose, and beam current on particle counts in medium-current phosphorus implantsBrewster, N. R. et al. | 1995
- 80
-
Particle generation in ion implantersMack, M. E. / Angel, G. C. / Pascucci, M. L. / Prisby, D. et al. | 1995
- 87
-
Trace elemental analysis of tungstenCherekdjian, S. / Ramsbey, M. / Anjum, M. et al. | 1995
- 92
-
Degradation of very thin gate dielectrics for MOS structures due to through-oxide ion implantationBaumvol, I. J. R. / Stedile, F. C. / Rigo, S. / Ganem, J.-J. et al. | 1995
- 99
-
Characterization of oxide layers grown on implanted siliconFranco, G. / Raineri, V. / Frisina, F. / Rimini, E. et al. | 1995
- 104
-
Application of defect related generation current for low-dose ion implantation monitoringHazdra, P. / Haslar, V. / Vobecky, J. et al. | 1995
- 109
-
Measurement of the distribution of damage in ion implanted GaAs by differential reflectance spectroscopyKraisingdecha, P. / Gal, M. / Tan, H. H. / Jagadish, C. et al. | 1995
- 113
-
Surface characterization of semiconductors with plasma and thermal waves analysisBuchmann, F. / Geiler, H. D. et al. | 1995
- 118
-
Reduction of measurement system variation using the Discrimination RatioNunes, J. / Cherekdjian, S. et al. | 1995
- 123
-
On the determination of two-dimensional carrier distributionsVandervorst, W. / Clarysse, T. / De Wolf, P. / Hellemans, L. et al. | 1995
- 133
-
Improved delineation technique for two dimensional dopant profilingGong, L. / Petersen, S. / Frey, L. / Ryssel, H. et al. | 1995
- 139
-
Two-dimensional profiling by selective etching: the role of implant induced secondary defectsSpinella, C. / Raineri, V. / Saggio, M. / Privitera, V. et al. | 1995
- 144
-
Mask edge effects in high energy implants: dopant and defect distributionsPrivitera, V. / Raineri, V. / Saggio, M. / Priolo, F. et al. | 1995
- 150
-
2 MeV aluminum implantation into silicon: radiation damagePfeifer, B. / Lindner, J. K. N. / Rauschenbach, B. / Stritzker, B. et al. | 1995
- 155
-
Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edgesHobler, G. et al. | 1995
- 163
-
3D modeling of ion implantation into crystalline silicon: influence of damage accumulation on dopant profilesPosselt, M. et al. | 1995
- 168
-
Analytical modeling of lateral implantation profilesLorenz, J. / Wierzbicki, R. J. / Ryssel, H. et al. | 1995
- 173
-
Channeling implantation into chemical compoundsNakagawa, S. T. et al. | 1995
- 179
-
Applications of focused ion beams to nondestructive analysesTakai, M. et al. | 1995
- 187
-
Implantation and transient boron diffusion: the role of the silicon self-interstitialStolk, P. A. / Gossmann, H.-J. / Eaglesham, D. J. / Poate, J. M. et al. | 1995
- 196
-
Studies of point defect/dislocation loop interaction processes in siliconJones, K. S. / Robinson, H. G. / Listebarger, J. / Chen, J. et al. | 1995
- 202
-
On the relation between dopant anomalous diffusion in Si and end-of-range defectsClaverie, A. / Laanab, L. / Bonafos, C. / Bergaud, C. et al. | 1995
- 210
-
Point defects observed in crystalline silicon implanted by MeV Si ions at elevated temperaturesLalita, J. / Svensson, B. G. / Jagadish, C. et al. | 1995
- 215
-
EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into siliconSealy, L. / Barklie, R. C. / Lulli, G. / Nipoti, R. et al. | 1995
- 219
-
Defect evolution in ion implanted crystalline Si probed by in situ conductivity measurementsBattaglia, A. / Coffa, S. / Priolo, F. / Spinella, C. et al. | 1995
- 223
-
Recombination enhanced suppression of deep trap accumulation in silicon during He^+ ion implantationErokhin, Y. N. / Ravi, J. / White, C. W. / Rozgonyi, G. A. et al. | 1995
- 227
-
Pre-amorphization damage study in as-implanted siliconCellini, C. / Carnera, A. / Berti, M. / Gasparotto, A. et al. | 1995
- 232
-
Dopant, defects and oxygen interaction in MeV implanted Czochralski siliconLa Ferla, A. / Galvagno, G. / Raineri, V. / Priolo, F. et al. | 1995
- 236
-
Variation of end of range density with ion beam energy and the predictions of the "excess interstitials" modelLaanab, L. / Bergaud, C. / Bonafos, C. / Martinez, A. et al. | 1995
- 241
-
Optical absorption in ion implanted Si filmsZammit, U. / Madhusoodanan, K. N. / Marinelli, M. / Scudieri, F. et al. | 1995
- 245
-
Deep defect levels and mechanical strain in Ge^+-implanted siliconSuprun-Belevich, Y. R. / Palmetshofer, L. et al. | 1995
- 249
-
Gettering of metals by He induced voids in siliconRaineri, V. / Battaglia, A. / Rimini, E. et al. | 1995
- 253
-
Proximity gettering of Au to ion beam induced defects in siliconWong-Leung, J. / Williams, J. S. / Elliman, R. G. / Nygren, E. et al. | 1995
- 257
-
Proximity gettering of transition metals in silicon by ion implantationOverwijk, M. H. F. / Politiek, J. / De Kruif, R. C. M. / Zalm, P. C. et al. | 1995
- 261
-
Transient kinetics in solid phase epitaxy of Ni doped amorphous siliconKuznetsov, A. Y. / Svensson, B. G. et al. | 1995
- 265
-
Control of defects in C^+, Ge^+, and Er^+ implanted Si using post amorphization and solid phase regrowthCristiano, F. / Zhang, J. P. / Wilson, R. J. / Gillin, W. P. et al. | 1995
- 271
-
Point defect induced SPE growth of Ni implanted siliconVyatkin, A. F. / Kuznetsov, A. Y. et al. | 1995
- 276
-
Ion-beam induced relaxation of strained Ge~xSi~1~-~x layersKringhoej, P. / Glasko, J. M. / Elliman, R. G. et al. | 1995
- 281
-
Thermodynamic behaviour of GeO~2 formed by oxygen implantation into relaxed Si~0~.~5Ge~0~.~5 alloyZhang, J. P. / Hemment, P. L. F. / Castle, J. E. / Liu, H. D. et al. | 1995
- 286
-
High-dose Ge^+ implantation into silicon at elevated substrate temperatureNan Xiang Chen / Schork, R. / Ryssel, H. et al. | 1995
- 290
-
A comparative study of MeV and medium-energy ion implantation into III-V compoundsWesch, W. / Wendler, E. / Bachmann, T. / Herre, O. et al. | 1995
- 294
-
Inversion of dose rate effects in ion implanted gallium arsenide in the low dose regimeJasper, C. / Morton, R. / Lau, S. S. / Haynes, T. E. et al. | 1995
- 298
-
2 MeV As^+ implantation in InAsWendler, E. / Wilson, R. J. / Jeynes, C. / Wesch, W. et al. | 1995
- 302
-
Channeling investigations of MeV Zn implanted InPKling, A. / Krause, H. / Flagmeyer, R.-H. / Vogt, J. et al. | 1995
- 307
-
MeV energy implantation of Fe in InPCarnera, A. / Gasparotto, A. / Scordilli, A. / Priolo, F. et al. | 1995
- 311
-
Ion implantation of group IV or VI elements for n-type doping of InPRidgway, M. C. / Kringhoej, P. / Johnson, C. M. et al. | 1995
- 315
-
Defect recovery of ion implanted InPWeyer, G. et al. | 1995
- 319
-
Viscosity of amorphous InP during room temperature structural relaxationCliche, L. / Roorda, S. / Masut, R. A. et al. | 1995
- 323
-
High-energy ion implantation for electrical isolation of InP-based materials and devicesRidgway, M. C. / Elliman, R. G. / Faith, M. E. / Kemeny, P. C. et al. | 1995
- 327
-
Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical propertiesClaverie, A. / Fujioka, H. / Laanab, L. / Liliental-Weber, Z. et al. | 1995
- 331
-
Hyperthermal (30-500 eV) C^+ ion-beam doping into GaAs during molecular beam epitaxyIida, T. / Makita, Y. / Kimura, S. / Kawasumi, Y. et al. | 1995
- 335
-
High temperature ion implantation of silicon carbideWesch, W. / Heft, A. / Wendler, E. / Bachmann, T. et al. | 1995
- 339
-
Optical and structural properties of hydrogen implanted silicon carbon alloysCompagnini, G. / Calcagno, L. / Foti, G. et al. | 1995
- 343
-
Ion bombardment of C~6~0: Raman study of amorphization and polymerizationPalmetshofer, L. / Kastner, J. et al. | 1995
- 347
-
Ion beam synthesis of yttrium silicides in (111)SiJin, S. / Lin, J. H. / Chen, L. J. / Shi, W. D. et al. | 1995
- 352
-
Growth of epitaxial CoSi~2 on SIMOX material by a solid-phase reaction of deposited TiN/Co/Ti layersLiu, P. / Zhou, Z. / Lin, C. / Zou, S. et al. | 1995
- 356
-
Ternary iron-cobalt silicide fabricated by ion beam synthesisHarry, M. A. / Curello, G. / Reeson, K. J. / Finney, M. S. et al. | 1995
- 361
-
Thermal stability of TiSi~2 on ion implanted siliconChen, J. F. / Chen, L. J. / Lur, W. et al. | 1995
- 366
-
Depth, phase and coarsening evolution of FeSi~2 precipitates upon thermal annealingMaltez, R. L. / Behar, M. / Amaral, L. / Fichtner, P. F. P. et al. | 1995
- 370
-
Ion implantation for optical applicationsBuchal, C. et al. | 1995
- 374
-
Room temperature light emitting silicon diodes fabricated by erbium ion implantationFranzo, G. / Priolo, F. / Coffa, S. / Polman, A. et al. | 1995
- 378
-
Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with ErLombardo, S. / Campisano, S. U. / Van de Hoven, G. N. / Polman, A. et al. | 1995
- 382
-
Irradiation-induced Ag-colloid formation in ion-exchanged soda-lime glassCaccavale, F. / De Marchi, G. / Gonella, F. / Mazzoldi, P. et al. | 1995
- 387
-
Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO~2 formed by ion implantationKomoda, T. / Kelly, J. / Cristiano, F. / Nejim, A. et al. | 1995
- 392
-
Thermal crystallization of Er^+-implanted KTiOPO~4 single crystalsBachmann, T. / Rottschalk, M. et al. | 1995
- 397
-
CL characterization and depth distributions of waveguide materials after 400 keV Eu implantationsCan, N. / Yang, B. / Hole, D. E. / Townsend, P. D. et al. | 1995
- 401
-
Fabrication of bifocal microlenses on InP and Si by Ar ion beam etchingRen, C. / Deyuan, X. / Guoliang, C. / Xianghuai, L. et al. | 1995
- 405
-
Application of advanced ion implantation techniques to Flash memoriesCappelletti, P. / Fratin, L. / Ravazzi, L. et al. | 1995
- 411
-
Comparison of retrograde and conventional p-wells in regard of latch-up susceptibilityBogen, S. / Koerber, K. / Gong, L. / Frey, L. et al. | 1995
- 416
-
High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technologyJacobson, D. C. / Kamgar, A. / Eaglesham, D. J. / Lloyd, E. J. et al. | 1995
- 420
-
SIMOX - a new challenge for ion implantationAuberton-Herve, A. / Wittkower, A. / Aspar, B. et al. | 1995
- 425
-
Ion-induced current measurement for optimization of buried implanted layers against soft errorsTakai, M. / Kishimoto, T. / Sayama, H. / Ohno, Y. et al. | 1995
- 429
-
Large-scale implantation and deposition research at Los Alamos National LaboratoryWood, B. P. / Henins, I. / Reass, W. A. / Rej, D. J. et al. | 1995
- 435
-
Modelling of charging effects in plasma immersion ion implantationEn, W. / Cheung, N. W. et al. | 1995
- 441
-
Compact high current ion implantation systemMurakami, J. / Kabasawa, M. / Shiraishi, T. / Tanaka, Y. et al. | 1995
- 445
-
Serial high-current implantation of large substratesWhite, N. R. / Sieradzki, M. / Satoh, S. et al. | 1995
- 450
-
Development of a high current MeV ion implanter using a variable energy RFQ linacAmemiya, K. / Ito, J. / Tokiguchi, K. / Sato, T. et al. | 1995
- 454
-
Introducing the Eaton NV-GSD/HE high energy implanterWilson, S. / McIntyre, T. et al. | 1995
- 458
-
The MeV-implantation facility at BochumBrand, K. et al. | 1995
- 462
-
The performance of the industrial high energy ion implanter ULVAC IH-860Agawa, Y. / Suzuki, H. / Yokoo, H. / Sakurada, Y. et al. | 1995
- 466
-
The CIIC-facility at the University of LublinLatuszynski, A. / Maczka, D. et al. | 1995
- 470
-
Nissin EXCEED 2000: A new high performance medium current implanterKawai, T. / Naito, M. / Tanjyo, M. / Nagai, N. et al. | 1995
- 474
-
The Nissin NH-50SR 500 kV implanter using multiply charged ionTamura, Y. / Ohnishi, T. / Shin'yama, T. / Maeda, T. et al. | 1995
- 478
-
Throughput rate enhancements for the Applied Materials Precision Implant 9500Edwards, P. / Morley, S. / Wells, S. / Wright, C. et al. | 1995
- 482
-
Low energy beam current enhancement for production-worthy shallow junction processesDevaney, A. S. / Bryan, N. / Ito, H. / Loome, D. A. et al. | 1995
- 486
-
Ion source plasma analysis for enhanced arc chamber designIto, H. / Devaney, A. / Bryan, N. / Armour, D. G. et al. | 1995
- 491
-
The Precision Implant 9500 Bernas ion sourcePovall, S. / Devaney, A. / Lowrie, C. / Wauk, M. et al. | 1995
- 495
-
High current RF-plasma-sputter-type heavy negative-ion source for negative-ion implanterTsuji, H. / Ishikawa, J. / Okayama, Y. / Toyota, Y. et al. | 1995
- 499
-
An ECR ion source on a 450kV platform for MeV-mA implantationCiavola, G. / Gammino, S. et al. | 1995
- 503
-
Ion sources for radioactive implantationLatuszynski, A. / Maczka, D. / Yushkevich, Y. V. et al. | 1995
- 507
-
Ion source development at LBL for ion implantation applicationLeung, K. N. / Bachman, D. S. / Herz, P. R. / Kunkel, W. B. et al. | 1995
- 511
-
High current radio frequency plasma source with a magnetic line-cusp fieldYabe, E. / Takahashi, K. / Kawamura, K. / Takayama, K. et al. | 1995
- 515
-
A fast dual-crucible vaporizer for the Varian E220 and E500 medium current ion implantersWalther, S. R. / Doody, R. D. et al. | 1995
- 519
-
Implant test results for zeolite based 100% PH~3 and AsH~3 gas bottles on the Varian E500 implanterWalther, S. R. / Mehta, S. / Brown, R. L. / Kaim, R. et al. | 1995
- 523
-
A zeolite-based atmospheric pressure hydride gas source for ion implantationMcManus, J. V. / Tom, G. M. / Kirk, R. et al. | 1995
- 527
-
An improved charge exchange cell for Genus MeV implantersLaFontaine, M. / Tokoro, N. / Quattrini, V. / Bissonnette, D. et al. | 1995
- 531
-
Production of multicharged boron ion from solids in electron cyclotron resonance ion sourceKato, Y. / Ishii, S. et al. | 1995
- 535
-
Enhancement of ion beam current on a metal ion implantation equipmentInouchi, Y. / Yamashita, T. / Fujiwara, S. / Matsuda, Y. et al. | 1995
- 539
-
Emittance considerations in beam line designRenau, A. / Evans, E. / Sullivan, P. J. et al. | 1995
- 543
-
The use of KOBRA for implanter beamline design and optimisationFoad, M. A. / Armour, D. G. / England, J. G. et al. | 1995
- 548
-
Safety considerations in cryopumping systems for ion implantersLiebert, R. B. / Ficarra, L. / Eddy, R. / Ghen, W. et al. | 1995
- 553
-
Application of spreadsheet matrix methods to ion implanter vacuum modelingStone, S. W. et al. | 1995
- 557
-
Reducing energy contamination in ion implanters using differential vacuum pumpingDowney, D. F. / Stone, S. W. et al. | 1995
- 563
-
A new device for the ion beam assisted treatment of powdersMueller, H. R. / Ensinger, W. / Wolf, G. K. et al. | 1995
- 567
-
Particle reduction of HI implanter in the fabrication of VLSI circuitsTsai, S. C. / Sheu, K. K. / Yang, H. C. / Lin, P. et al. | 1995
- 571
-
Enhancements to the particulate performance of the Applied Materials 9500Mitchell, R. / Wauk, M. et al. | 1995
- 575
-
Lognormal statistics for particles: models, causes and implicationsSinclair, F. / Blake, J. / Brubaker, S. et al. | 1995
- 579
-
In situ particle monitoring in a Varian E1000HP ion implanterSedgewick, J. / Elzingre, M. / Evanko, M. / Mulderrig, M. et al. | 1995
- 583
-
In situ particle monitoring in a Varian medium current implanterSedgewick, J. / Hertel, R. / Rizzo, G. et al. | 1995
- 588
-
Contamination eliminator system of medium current ion implanterMihara, Y. / Niikura, K. / Fukui, R. / Sakurada, Y. et al. | 1995
- 592
-
Metal contamination in ion implantation processesPolignano, M. L. / Bresolin, C. / Cazzaniga, F. / Queirolo, G. et al. | 1995
- 596
-
Metallic contaminants from silicone elastomersCherekdjian, S. / Murry, J. / Wood, C. / Gordon, M. et al. | 1995
- 600
-
Use of a low temperature plasma system for wafer charge control in high current implantationMehta, S. / Nee, R. / Walther, S. R. / Eddy, R. et al. | 1995
- 604
-
Measurements of charge neutralization due to photoresist outgassingKellerman, P. / Hrynyk, W. et al. | 1995
- 608
-
Plasma flood guns - NV10, PI9000 - Old machine, new retrofitCherekdjian, S. / Murry, J. / Oftedahl, R. / Montgomery, H. A. et al. | 1995
- 612
-
Charging voltage measurement of an isolated electrode and insulators during negative-ion implantationTsuji, H. / Toyota, Y. / Ishikawa, J. / Sakai, S. et al. | 1995
- 616
-
Measuring uniformity of low dose implants performed on a high current implanterHennessy, P. et al. | 1995
- 622
-
Dose uniformity over large-area wafersCurrent, M. I. / Adibi, B. / Marin, T. / Leung, S. et al. | 1995
- 626
-
Dose uniformity in the Eaton NV-8200P ion implantation systemBrubaker, S. R. / Parmantie, W. et al. | 1995
- 630
-
Sources of variation in thermal wave measurements with high current ion implantationRomig, T. / Bold, T. / Pearce, N. et al. | 1995
- 634
-
Characterization and evaluation of the PI9500 high current implanter for low dose (1E11-1E14) implants in sub-micron device manufactureWilson, J. W. / Flannigan, E. / Flood, J. / Liu, X. et al. | 1995
- 638
-
In-situ monitoring of ion implantation in the high dose range by thermal wave analysisSchlemm, H. / Geiler, H.-D. / Kluge, A. et al. | 1995
- 642
-
Photothermal response of ion implanted siliconWagner, M. / Kaepplinger, S. / Geiler, H.-D. et al. | 1995
- 646
-
Trends in the sheet resistance and uniformity of medium dose n- and p-type implants as a function of time and wafer surface preparationCummings, J. J. / Downey, D. F. / Eddy, R. J. / Meloni, M. L. et al. | 1995
- 651
-
Enhanced thermal wave monitoring of high dose implantationHagihara, T. / Matsumoto, K. / Kuribara, M. / Pearce, N. et al. | 1995
- 656
-
Reflected optical second harmonic generation as a method for characterization of ion-implanted, thermal annealed silicon surfaces and silicon-insulator interfacesKravetsky, I. V. / Kulyuk, L. L. / Micu, A. V. / Vieru, I. S. et al. | 1995
- 660
-
Mass resolution & beam purityCherekdjian, S. / Ramsbey, M. / McComas, W. / Anjum, M. et al. | 1995
- 664
-
Reduction of boron cross contamination levels during arsenic implants using the Applied Materials Precision Implant 9500Horvath, J. G. / Little, N. / Rigsby, D. J. / Anthony, M. et al. | 1995
- 668
-
Multiply charged, channeled, ion implantationSteeples, K. / Kau, D. C. / Mehta, S. / Kaim, R. et al. | 1995
- 673
-
Monitoring channeling effects in production in low dose implantsHennessy, P. et al. | 1995
- 677
-
Measuring a two dimensional profile of an ion beamSzajnowski, W. J. / England, J. G. / Stephens, K. G. / Fotheringham, I. et al. | 1995
- 681
-
Dedicated test facility for ion beam quality evaluation and spectroscopiesFoad, M. A. / Armour, D. G. / Klimes, Z. / Hilton, B. et al. | 1995
- 685
-
Advanced statistical process control techniques for monitoring the performance of ion implantersYarling, C. B. / Cherekdjian, S. / Nunes, J. et al. | 1995
- 689
-
Impact of implant scanning techniques on yieldPanja, R. / Ignaut, S. et al. | 1995
- 693
-
Photoresist characterization using high dose implantationAxan, B. / Baron, D. / Daniel, S. et al. | 1995
- 697
-
An integrated resist/implant/ash study of different photoresists with respect to implant and ashMcOmber, J. I. / Ostrowski, K. J. / Whitney, L. / Meloni, M. L. et al. | 1995
- 702
-
Uptime improvements by using a Faraday with magnetic electron suppressionLundquist, P. / Albertson, T. / Cahill, K. / Mack, M. E. et al. | 1995
- 706
-
A non-destructive technique for checking SOI buried oxide qualityMeda, L. / Bertoni, S. / Cerofolini, G. F. / Paglinao, P. et al. | 1995
- 711
-
Stopping power and charge equilibration process for channeled He ions along (100) and (110) directions of Si crystalDos Santos, J. H. R. / Grande, P. L. / Boudinov, H. / Behar, M. et al. | 1995
- 716
-
Dechanneling by thermal vibrations in silicon ion implantationMarques, L. A. / Rubio, J. E. / Jaraiz, M. / Arias, J. et al. | 1995
- 720
-
Monte-Carlo computer simulations of PIXE-channelingKling, A. et al. | 1995
- 724
-
Dynamic Monte Carlo simulation of high fluence ion implantation into TiNMiyagawa, Y. / Nakayama, A. / Nakao, S. / Tanemura, S. et al. | 1995
- 728
-
New practical model for depth profiles of implanted ions with channeling tail at energies of sub-MeV regionKase, M. / Murakami, J. / Kubo, T. / Mori, H. et al. | 1995
- 732
-
Analytical simulation of high energy boron, phosphorus, and arsenic implants in crystalline siliconGong, L. / Lucassen, M. / Bogen, S. / Frey, L. et al. | 1995
- 737
-
Proton stopping in gases and solidsKondratyev, V. N. / Bonasera, A. et al. | 1995
- 741
-
BS and ERD analysis of the metal-glass interfaces produced by high energy metal Ion Beam Assisted DepositionDuvanov, S. M. / Kobzev, A. P. / Tolopa, A. M. et al. | 1995
- 745
-
Defects generated by dispersive high energy ion beamHazdra, P. / Spurny, F. / Vobecky, J. et al. | 1995
- 749
-
Passive damage detection of arsenic implanted siliconLowell, J. / Anjum, M. / Wenner, V. / Kyaw, M. et al. | 1995
- 752
-
The evolution of mask-edge-defects during IC's processingHsieh, Y. F. / Tsui, B. Y. / Chang, C. H. et al. | 1995
- 756
-
End-of-range defects driven redistribution in uniformly boron doped silicon during annealingBergaud, C. / Mathiot, D. / Laanab, L. / Claverie, A. et al. | 1995
- 759
-
Identification of residual damage energy levels in boron implanted siliconDue�as, S. / Castan, E. / Enriquez, L. / Barbolla, J. et al. | 1995
- 763
-
Point defect depth distribution in Si implanted with high energy ionsDvurechenskii, A. V. / Groetzschel, R. / Herrman, F. / Karanovich, A. A. et al. | 1995
- 763
-
Some point defects removal in silicon by 340 MeV Xe ion bombardmentAntonova, I. V. / Dvurechenskii, A. V. / Karanovich, A. A. / Klose, H. et al. | 1995
- 771
-
Annihilation of stacking fault tetrahedra by post amorphisation of SIMOX structuresGiles, L. F. / Cristiano, F. / Nejim, A. / Curello, G. et al. | 1995
- 775
-
The effects of film structure on the boron penetration in BF^+~2-implanted poly-SiChu, C. H. / Chao, T. S. / Wang, C. F. / Ho, K. J. et al. | 1995
- 779
-
Simulation of antimony diffusion in heavily doped Si by rapid thermal annealing with regard to collective transport phenomenaFedotov, S. A. et al. | 1995
- 783
-
Annealing behaviors of 5 keV, 5x10^1^5/cm^2 ion implanted (001)SiYang, J. J. / Chu, C. H. / Chen, L. J. et al. | 1995
- 787
-
Annealing behaviors of P^+-implanted silicon inside miniature size oxide openingsHsu, S. N. / Chen, L. J. et al. | 1995
- 791
-
Nitrogen in-diffusion and accumulation in oxygen-implanted silicon during thermal annealingBultena, S. / Gujrathi, S. C. / Brebner, J. L. / Yelon, A. et al. | 1995
- 797
-
Formation of diamond phases in Si substrate by means of carbon ion implantationShow, Y. / Izumi, T. / Mori, Y. / Hatta, A. et al. | 1995
- 801
-
Hydrogen interaction with phosphorus ion implanted siliconTonini, R. / Monelli, A. / Corni, F. / Ottaviani, G. et al. | 1995
- 805
-
Structural and spectroscopic analysis of high dose carbon ion implantation processes in siliconSerre, C. / Perez-Rodriguez, A. / Romano-Rodriguez, A. / Morante, J. R. et al. | 1995
- 809
-
Elastic strain in silicon implanted with in situ photoexcitationDanilin, A. B. / Charnyi, L. A. / Nemirovskii, A. W. et al. | 1995
- 814
-
Reverse currents of p^+/n diodes after high energy implantation of C^+ and Ge^+ ions and annealingKoegler, R. / Von Borany, J. / Panknin, D. / Skorupa, W. et al. | 1995
- 819
-
Concentration dependent redistribution of implanted Er^+ in SiO~2/Si layers at high temperaturesBachmann, T. / Kollewe, D. et al. | 1995
- 823
-
Electroluminescence analysis of the SIMOX oxide layerBota, S. / Morante, J. R. / Garrido, B. / Perez-Rodriguez, A. et al. | 1995
- 827
-
Anomalous out-diffusion of ion-implanted arsenic in siliconParker, R. H. / Thomas, S. L. / Leung, S. / Current, M. I. et al. | 1995
- 831
-
Implant-isolation of n-InP and n-InGaAs for PIN photodiode applicationsAkano, U. G. / Mitchell, I. V. / Shepherd, F. R. / Miner, C. J. et al. | 1995
- 835
-
Modification of properties of the inversion layer in p-InAs(Zn) by proton implantationKoltsov, G. I. / Krutenyuk, Y. V. / Skipetrov, E. P. et al. | 1995
- 838
-
Electrical activation of Si implanted into GaAs through As-doped a-Si:H filmsSakaguchi, M. / Yokota, K. / Mori, H. / Shiomi, A. et al. | 1995
- 842
-
Damage removal and evolution of strain in thermally annealed ion implanted GaAsKozanecki, A. / Gwilliam, R. / Kidd, P. / Sealy, B. J. et al. | 1995
- 847
-
Carrier activation in implanted GaAs treated with a thermal and laser annealing combinationPizzuto, C. / Vitali, G. / Rossi, M. / Zollo, G. et al. | 1995
- 852
-
Raman and ellipsometric investigation of GaAs implanted with Se, Cd and Te ionsKulik, M. / Maczka, D. / Akimov, A. N. / Komarov, F. F. et al. | 1995
- 856
-
Flux dependence of implantation damage in GaAs induced by focused gallium ion beamTakai, M. / Hara, S. / Kishimoto, T. / Yanagisawa, J. et al. | 1995
- 860
-
Hall probe measurement limitations in selenium implanted In~0~.~5~3Ga~0~.~4~7AsAnjum, M. / Sealy, B. J. / Gill, S. S. / Cherekdjian, S. et al. | 1995
- 864
-
Implantation of tin, tellurium and argon into In~0~.~5~3Ga~0~.~4~7AsAnjum, M. / Sealy, B. J. / Gill, S. S. / Cherekdjian, S. et al. | 1995
- 868
-
Investigation of annealing behavior of amorphous layers produced by ion-implantation in InP using photoacoustic and Raman spectroscopiesYoshinaga, H. / Agui, T. / Matsumori, T. / Uehara, F. et al. | 1995
- 872
-
Damage behavior of MeV N+ ion implanted GaSbLin, C. / Qian, Y. / He, Z. / Zheng, Y. et al. | 1995
- 876
-
Study of C~6~0 doping with Xe using the Moessbauer resonance in ^1^3^3CsPattyn, H. / Inia, D. / Emberson, S. / Milants, K. et al. | 1995
- 881
-
Diamond-like films obtained by high energy density plasmaYang, J. / Lin, Z.-D. / Wang, L.-X. / Jin, S. et al. | 1995
- 885
-
Ion beam synthesis of homogeneous nitride layers with a high quality front interfaceSchork, R. / Ryssel, H. et al. | 1995
- 889
-
Atomic transport of V and Al induced by N-ion implantation in Ti-6Al-4V-alloy and related TiN surface layer formationAdami, M. / Bonelli, M. / Miotello, A. / Rinner, M. et al. | 1995
- 893
-
Wear resistant coatings deposited on orthopaedic Ti-6AI-4V prostheses by ion beam assisted deposition techniqueBonelli, M. / Miotello, A. / Rinner, M. / Adami, M. et al. | 1995
- 897
-
Improvement of the mechanical properties of titanium alloys for surgical prostheses by ion implantationCaccavale, F. / Lo Russo, S. / Mazzoldi, P. / Bolzan, E. et al. | 1995
- 902
-
Hardening and increased adhesion of TiO~2 surface layers by nitrogen implantationAscheron, C. E. / Fukushima, K. / Yamada, I. et al. | 1995
- 906
-
Ion implantation, low and high temperature ion-beam mixing: different routes for amorphous phase formation in metallic systemsThome, L. / Jagielski, J. et al. | 1995
- 910
-
Nitrogen ion mixed tungsten thin films for metal-organic chemical vapor deposited copper metallizationKim, Y. T. / Lee, C. W. / Kwon, C. S. et al. | 1995
- 914
-
High-energy ion implantation: luminescence studies of solids during irradiationSkuratov, V. A. / Altynov, V. A. / Abu AlAzm, S. M. et al. | 1995
- 918
-
X-ray HRXRD measurements and TEM observations of the lattice damage in 0.70 and 0.74 MeV Si implanted GaAs crystalNipoti, R. / Bocchi, C. / Frigeri, C. / Lanzieri, C. et al. | 1995
- 922
-
Growth and characterisation of cobalt silicide on Si(100) using mass-selected ultra low energy Co^+ beamsFoad, M. A. / Chen, S. M. / Valizadeh, R. / Moffatt, S. et al. | 1995
- 926
-
Synthesis of Co~xFe~1~-~xSi~2 with high-dose ion implantation and reactive codeposition epitaxyVantomme, A. / Wu, M. F. / Degroote, S. / Dekoster, J. et al. | 1995
- 930
-
Low-temperature formation of silicided shallow p^+n junctions by BF^+~2 implantation with various dosages into thin palladium films on Si substratesLin, C. T. / Chou, P. F. / Cheng, H. C. et al. | 1995
- 934
-
Comparison of the growth mechanisms of ion beam synthesised CoSi~2 in crystalline & amorphous siliconHutchinson, S. V. / Finney, M. F. / Reeson, K. J. / Harry, M. A. et al. | 1995
- 939
-
Structural study of Co/Si films synthesized by ion beam assisted depositionYang, J. / Lin, Z.-D. / Yan, X.-S. / Tao, K. et al. | 1995
- 943
-
Ion implantation equipment for flat panel displaysAitken, D. et al. | 1995
- 950
-
Applications of MeV ion implantation technologyBorland, J. O. et al. | 1995
- 955
-
Pixel size reduction of CCD imaging devices by high-energy ion implantationHokari, Y. / Kawakami, Y. / Furumiya, M. / Sawahata, K. et al. | 1995
- 959
-
Study of the high energy doping in Si and SIMOX structures using FTIR spectroscopyKatsidis, C. C. / Siapkas, D. I. / Skorupa, W. / Hatzopoulos, N. et al. | 1995
- 963
-
A novel approach for SIMOX wafer cost reductionMeyyappan, N. / Blake, J. / Nakato, T. / Hsu, V. et al. | 1995
- 967
-
Process optimization for large angle tilt implantKau, D. C. / Steeples, K. / Mistry, K. / Andreoli, M. et al. | 1995
- 972
-
Variation of transistor characteristics with implant angle for arsenic source/drain implantsHennessy, P. et al. | 1995
- 977
-
Study of damage effects of implant and etching in metal-to-p^+ contactsWilson, J. W. / Chapman, R. / Flannigan, E. / Liu, X. et al. | 1995
- 981
-
Studies of ultra-shallow p^+-n junction formation using Plasma DopingFelch, S. B. / Sheng, T. / Ganin, E. / Chan, K. K. et al. | 1995
- 985
-
Plasma dopingMizuno, B. / Nakayama, I. / Shimizu, N. / Kubota, M. et al. | 1995
- 989
-
The Frankfurt PIII-experimentThomae, R. W. / Seiler, B. / Bender, H. / Brutscher, J. et al. | 1995
- 994
-
Design of low cost plasma immersion ion implantation systemKazor, A. / Gwilliam, R. M. / Jeynes, C. / Blewett, M. J. et al. | 1995
- 998
-
Preparation of self-supporting thin Si films by ion implantation and selective etching techniquesSaitoh, K. / Niwa, H. / Nakao, S. / Miyagawa, S. et al. | 1995
- 1002
-
Cluster ion beam processing of materialsYamada, I. / Takaoka, G. H. / Akizuki, M. / Ascheron, C. E. et al. | 1995