UV Curing and Photoresist Outgassing in High Energy Implantation (English)
- New search for: Jones, M. A.
- New search for: Erokhin, Y.
- New search for: Horsky, T.
- New search for: Insalaco, L.
- New search for: Jones, M. A.
- New search for: Erokhin, Y.
- New search for: Horsky, T.
- New search for: Insalaco, L.
- New search for: Ishidida, E.
In:
Ion implantation technology
;
182-185
;
1996
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ISBN:
- Conference paper / Print
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Title:UV Curing and Photoresist Outgassing in High Energy Implantation
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Contributors:Jones, M. A. ( author ) / Erokhin, Y. ( author ) / Horsky, T. ( author ) / Insalaco, L. ( author ) / Ishidida, E.
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Conference:International conference; 11th, Ion implantation technology ; 1996 ; Austin; TX
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Published in:Ion implantation technology ; 182-185
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Publisher:
- New search for: IEEE
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Publication date:1996-01-01
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Size:4 pages
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Remarks:Described as proceedings. Also known as IIT96. IEEE cat no 96TH8182
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Ion Implant Related Trends in Devices and Process EngineeringGreenwell, D. W. / Brown, R. L. et al. | 1996
- 5
-
Life below 1keVMoffatt, S. et al. | 1996
- 9
-
Suppression of Ion-Induced Charge Collection Against Soft-ErrorKishimoto, T. / Takai, M. / Ohno, Y. / Sayama, H. et al. | 1996
- 13
-
Process Architectures using MeV Implanted Blanket Buried Layers for Latch-Up Improvements on Bulk SiliconRubin, L. M. / Simonton, R. B. / Wilson, S. D. / Morris, W. et al. | 1996
- 17
-
Current & Emerging Production Applications/Trends of MeV TechnologyBorland, J. O. et al. | 1996
- 21
-
Epi Avoidance for CMOS Logic Devices Using Mev ImplantationBorland, J. O. / Wristers, D. / Walker, J. / Daniel, D. et al. | 1996
- 25
-
Evaluation of Si Pre-Amorphization for Obtaining Ultra-Shallow JuntionsSultan, A. / Banerjee, S. / List, S. / Pollack, G. et al. | 1996
- 29
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Effect of F on B Penetration Through Gate Oxide for BF~2 Implants Used to Obtain Ultra-Shallow Junctions by RTASultan, A. / Craig, M. / Banerjee, S. / List, S. et al. | 1996
- 33
-
Comparison of Zero Degree and Tilted Arsenic MDD ImplantsTripsas, N. H. / Nayak, D. / Luning, S. et al. | 1996
- 37
-
A Recent Study of the Formation of SIMOX/SOI Materials and Their Device ApplicationsZhang, J. P. / Li, Y. X. / Xi, X. M. / Zhang, X. et al. | 1996
- 41
-
Synthesis of Si/Si~1~-~xGe~x/Si Heterostructures for Device Applications Using Ge^+ Implantation into SiliconNejim, A. / Cristiano, F. / Gwilliam, R. M. / Hemment, P. L. F. et al. | 1996
- 45
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H^+ Implantation in Si for The Void Cut SOI ManufacturingHara, T. / Kakizaki, Y. / Oshima, S. / Kihana, T. et al. | 1996
- 49
-
Ion Implantation Damage in Quarter Micron CMOS TechnologyBala, K. / Hoepfner, J. / Tanimoto, H. / Takedai, S. et al. | 1996
- 53
-
Beam-plasma Concepts for Wafer Charging Control During Ion ImplantationCurrent, M. I. / Vella, M. C. / Lukaszek, W. et al. | 1996
- 57
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Wafer Charge Neutralization Systems-Simulation and ExperimentMehta, S. / Walther, S. R. / Mack, M. E. / Daniel, P. et al. | 1996
- 61
-
A Study of Wafer Charging with CHARM and SPIDER MonitorsCurrent, M. I. / Shi, J.-H. / Liu, J. / Chan, Y. D. et al. | 1996
- 65
-
A Study of Wafer Charging with CHARM-2 and Large Area Capacitor MonitorsCurrent, M. I. / De Haan, S. et al. | 1996
- 69
-
Gate Oxide Damage Measured with a Unique GOI StrutureLeung, S. / Ito, H. / Park, C. / Kim, Y. H. et al. | 1996
- 73
-
Investigation of Negative Charging with Plasma Flood Gun (PFG) During High Current ImplantationMehta, S. / Axan, B. / Walther, S. / Felch, S. et al. | 1996
- 77
-
Short Loop Monitor for Charging Damage in Implantation ProcessBersuker, G. / Werking, J. / Williamson, G. / Chan, Y. D. et al. | 1996
- 81
-
Charging Characteristics of High Dose Source Implants of DMOS DevicesChen, K. / Tai, S. / Chang, M. / Ng, D. et al. | 1996
- 85
-
Photoresist-Enhanced Wafer Charging During Hgh Current Ion ImplantationDixon, W. / Lukaszek, W. / Heden, C. et al. | 1996
- 89
-
Influence of Photoresist on Wafer Charging During High Current Arsenic ImplantLukaszek, W. / Reno, S. / Bammi, R. et al. | 1996
- 93
-
Enhanced Ion Implantation Charging Damage on Thin Gate Oxide Due to PhotoresistPark, D. / Hu, C. et al. | 1996
- 96
-
Effects of Beam Energy Purity on Junction Depths in Submicron DevicesRubin, L. / Morris, W. et al. | 1996
- 100
-
Energy Contamination from Multiple-Charged Ion Implantation in Conventional ImplanterKubo, T. / Hisaeda, T. / Miyake, T. / Ishigaki, T. et al. | 1996
- 104
-
Charge Exchange Effects in Production High Energy Implanter DosimetryChen, H.-G. / Erokhin, Y. / McIntyre, E. / Sinclair, F. et al. | 1996
- 108
-
Purity of Low Energy Beams in R.F. Linear Accelerator Based ImplantersMcIntyre, E. K. / Jones, M. / Nakatsugawa, T. / Whaley, K. et al. | 1996
- 111
-
Characterizing Energy Contamination Mechanisms in Multiply Charged Ion BeamsScotney-Castle, M. / Lee, R. M. et al. | 1996
- 115
-
Anomalous Peaks in Mass Spectra; Effects of Pre-Analysis Dissociation and Charge Exchange EventsJohnson, R. C. et al. | 1996
- 117
-
Mechanisms of Elemental Contamination in Ion Implantation EquipmentWauk, M. T. / Murrell, A. / Wagner, D. / Edwards, P. et al. | 1996
- 121
-
Applications of Surface Analytical Techniques for Metals Reduction in Ion ImplantationDowney, D. F. / Zhao, Z. / Angel, G. / Eddy, R. J. et al. | 1996
- 127
-
In-Situ RBS for Oxygen Ion Implantation SystemsFarley, M. / Allen, L. P. / Smick, T. / Ryding, G. et al. | 1996
- 131
-
Use of Accelerator Mass Spectrometry for Trace Element DectectionZhao, Z. Y. / Mehta, S. / Angel, G. / Datar, S. A. et al. | 1996
- 135
-
Tungsten Contamination in BF~2 ImplantsLiebert, R. B. / Angel, G. C. / Kase, M. et al. | 1996
- 139
-
Metals-Contamination-Reduction Program for the Varian EHP-220/500 Medium-Current Ion ImplanterSwenson, D. R. / Downey, D. F. / Walther, S. R. / Renau, A. et al. | 1996
- 143
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Metals Contamination Reduction on the NV-8200PRathmell, R. D. / Brune, A. / Kamenitsa, D. E. / Seiler, D. et al. | 1996
- 147
-
Dopant Cross-Contamination Reduction with a 3-Position BeamstopMurrell, A. / Wauk, M. / Clarke, N. / Burgin, D. et al. | 1996
- 151
-
High Current Implanter Dopant Cross-Contamination and Its ControlXu, J. / Lee, H. S. et al. | 1996
- 155
-
A New, In-Line Method for Separating Frontside/Backside Metallic Contamination from ImplantationSherry, J. / Lowell, J. / Eddy, R. / Todorov, S. et al. | 1996
- 158
-
Elemental Analysis of Ion Implantation Added ParticlesEngland, J. / McLaren, M. / Mitchell, R. / Uritsky, Y. et al. | 1996
- 162
-
Replacing Silicon Monitors with In Situ Particle Monitoring in the GSD200 Ion ImplanterMalenfant, J. / Sedgewick, J. E. / Burghard, R. et al. | 1996
- 166
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Minimizing Particle Contamination in High Current Ion ImplantersMack, M. E. / Angel, G. C. / Renau, A. / Brown, D. A. et al. | 1996
- 170
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Particle Transport Reduction in a Serial High Current ImplanterWalther, S. R. / Sieradzki, M. / White, N. R. et al. | 1996
- 174
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Backside Particle Reduction on PI9500 Series Ion ImplanterMiura, R. / Ishigaki, H. / Matsunaga, Y. et al. | 1996
- 178
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Photoresist Integrity During High Energy ImplantParrill, T. M. / Jones, M. / Jain, A. et al. | 1996
- 182
-
UV Curing and Photoresist Outgassing in High Energy ImplantationJones, M. A. / Erokhin, Y. / Horsky, T. / Insalaco, L. et al. | 1996
- 186
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Thick Photoresist Outgassing During MeV Implantation (Mechanism & Impact on Production)Lee, W. J. / Tokoro, N. / Cho, H. T. / Borland, J. O. et al. | 1996
- 190
-
Exploration and Prevention of Photo Resist Burning in a High Current Ion ImplanterRomig, T. / Bishop, M. / Rio, V. et al. | 1996
- 194
-
Profile Analysis of a 0.25 m CMOS ProcessCurrent, M. I. / Castle, M. / Chia, V. / Mount, G. et al. | 1996
- 198
-
Machine and Metrology Issues for Dose Accuracy, Repeatability, and Uniformity of Ion ImplantersYarling, C. B. / Current, M. I. / Marin, T. et al. | 1996
- 202
-
Low Dose Ion Implantation Characterization for Vt ControlShort, A. / Bala, K. / Glawischnig, H. et al. | 1996
- 206
-
Production Implant Monitoring Using the Therma-Probe 500Pearce, N. / Zhou, L. / Graves, P. / Takeo, H. et al. | 1996
- 210
-
Comparison of Sensitivity and Precision of Instruments Used for Monitoring Low Dose Si^+ Implant UniformityRosenblatt, D. H. / McMillen, J. A. et al. | 1996
- 214
-
Dose Control of MeV-Implantation by Photoluminescence Heterodyne TechniqueWagner, M. / Geiler, H. D. / Funk, K. et al. | 1996
- 218
-
Dose and Damage Control of MeV-Implants by Photothermal Heterodyne AnalysisBrand, K. / Karge, H. / Geiler, H. D. et al. | 1996
- 222
-
Implantation/Diffusion Process Matching Characterization Via Secondary Ion Mass Spectrometry (SIMS)Lu, S. / Golonka, L. / Schenk, R. / Evans, K. et al. | 1996
- 226
-
Micro Uniformity in MeV Implantation (A Case Study)Heden, C. / Davis, B. / Heckman, V. / Weisenberger, W. et al. | 1996
- 229
-
In-Line Detection of Radial Non-Uniformity of V~T-Adjust Implants in 200mm Wafers Using Hg-probe C-V Carrier Depth ProfilingWeinzierl, S. R. / Hillard, R. J. / Gruber, G. A. et al. | 1996
- 233
-
A Technique for Determining Beam Parallelism on a Medium Current Implanter Using the Therma-Wave Therma-ProbeKamenitsa, D. E. / Rathmell, R. D. / McCoy, W. R. / Lillian, P. K. et al. | 1996
- 237
-
Oxide Charging Induced By Electron Exposure in Ion Implantation: Quantification and QualificationStuber, A. L. / Lowell, J. et al. | 1996
- 241
-
Optimal Control of Ion Beam DynamicsViviani, G. L. / Falco, M. et al. | 1996
- 245
-
Analytical Techniques for Measuring Contamination Introduced During Ion ImplantationBiswas, S. / McQuillan, F. / Littlewood, S. / Kelly, I. et al. | 1996
- 249
-
Particle-Scattering Phenomenon of Powders Caused by Charging Voltage of the Surface during Ion ImplantationIshikawa, J. / Tsuji, H. / Gotoh, Y. et al. | 1996
- 256
-
Characterization of Surface Barrier Effects from Cu-Implanted SiO~2/Si InterfacesParks, H. / Wang, X. / Lowell, J. et al. | 1996
- 260
-
Cooled Electrostatic Chuck for High Current Serial Ion ImplantationWalther, S. R. / Ballou, J. / White, N. R. et al. | 1996
- 264
-
Across-Wafer Channeling Variations on Batch Implanters: A Graphical Technique to Analyze Spinning Disk SystemsJones, M. A. / Sinclair, F. et al. | 1996
- 268
-
Accurate Dose Matching Measurements Between Different Ion ImplantersFalk, S. / Callahan, R. / Lundquist, P. et al. | 1996
- 272
-
In-Situ Ion Beam Profiling by Fast Scan SamplingSplinter, P. / Sinclair, F. / Demario, N. / Reed, W. et al. | 1996
- 276
-
Accurate and Precise Mass Determination for Enhanced Ion Bean Tuning EfficiencyBrown, D. A. / Ackerman, D. et al. | 1996
- 279
-
A Novel Ion Source for High Current Ion ImplantationRenau, A. / Smatlak, D. et al. | 1996
- 283
-
Enhanced Bernas Ion Source for the Varian EHP-500 Medium-Current Ion ImplanterSwenson, D. R. / Renau, A. / Walther, S. R. / Mack, M. E. et al. | 1996
- 287
-
Advanced Microwave Ion Source for 100mA-Class SIMOX Ion ImplantationTokiguchi, K. / Seki, T. / Amemiya, K. / Yamashita, Y. et al. | 1996
- 291
-
High Frequency Ion Sources for Ion Implanters-Theoretical and Practical ComparisonIto, H. / Sakudo, N. et al. | 1996
- 295
-
Process Performance of SDS, High Pressure Hydrides and Solid Vaporizer Feed Materials on a 9500xR Ion ImplanterMarin, T. / Boyd, W. G. / McManus, J. et al. | 1996
- 299
-
Performance of SDS BF~3 vs. High Pressure BF~3 in Ion ImplantationBoyd, W. / Hilkene, M. / McManus, J. / Edwards, D. et al. | 1996
- 303
-
Ion Implanter Testing and Process Results using Low Pressure, Zeolite-based Gas Bottles in Medium and High Current Ion ImplantersBrown, S. / Walther, J. / Jillson et al. | 1996
- 311
-
SDS[TM] Gas Source Feed Material Systems for Ion ImplantationBrown, R. L. et al. | 1996
- 315
-
Optimization of Secondary Electron Flood Design for the Production of Low Energy ElectronsReece, R. N. / Erokhin, Y. / Simonton, R. / Freer, B. et al. | 1996
- 319
-
Resistive Deceleration in the xRLEAP ImplanterHarrison, B. / Lane, L. et al. | 1996
- 323
-
Low Energy Beam Extraction in Terms of Magnetic Field, Electic Field and Ion OpticsIto, H. / Bryan, N. et al. | 1996
- 327
-
Energy Values of Very Low-Energy Ion BeamsSakudo, N. / Hayashi, K. / Yukishiro, Y. et al. | 1996
- 331
-
Novel Ion Beam Extraction Assembly with Improved Lifetime for High Current, Low Energy Ion ImplantersPovall, S. / Loome, D. / Burgin, D. / Foad, M. A. et al. | 1996
- 334
-
Negative-Ion Production of Reactive Elements from Compound Gases in the RF Plasma-Sputter-Type Heavy Negative-Ion SourceTsuji, H. / Ishikawa, J. / Tomita, T. / Gotoh, Y. et al. | 1996
- 338
-
Multicharged Boron Ions from Pure Elements Evaporated in a 2.45-GHz ECR SourceKato, Y. / Fukukawa, A. / Ishii, S. et al. | 1996
- 342
-
Ion Optics of Parallel Scan Implanter Using Two Octupole DeflectorsTsukakoshi, O. / Niikura, K. / Nishihashi, T. / Mihara, Y. et al. | 1996
- 346
-
Production Proven Electrostatic Platen for Medium Current ImplantationFrutiger, W. / Eddy, R. / Brown, D. A. / Mack, M. E. et al. | 1996
- 350
-
End Station and Beam Line Design Considerations for Photoresist Outgassing with High Energy (MeV) Ion ImplantationO'Connor, J. P. / Tokoro, N. et al. | 1996
- 355
-
Moore's Law: Implications for Ion Implant Equipment-An Equipment Designer's PerspectiveWhite, N. R. et al. | 1996
- 360
-
Two-Dimensional Beam Plasma Parameter Maps for Secondary Electron Plasma Bridge, and Plasma Cell FloodsKellerman, P. / Benveniste, V. et al. | 1996
- 364
-
3D Simulation Code for the Modelling of Beam Line OpticsFoad, M. A. / Harrison, B. F. / Marin, T. et al. | 1996
- 367
-
Purity of High Energy Beams in R.F. Linear Accelerator Based ImplantersMcIntyre, E. K. / Jones, M. / Whaley, K. / Nakatsugawa, T. et al. | 1996
- 371
-
LINAC Simluation for High Energy Ion ImplantationWan, Z. / Saadatmand, K. / Sinclair, F. / Lysenko, W. et al. | 1996
- 375
-
Introducing the NV-GSD/VHE Very High Energy ImplanterWilson, S. / McIntyre, E. et al. | 1996
- 379
-
Some Basic Considerations of Sector MagnetsNobes, M. J. / McLaren, M. G. et al. | 1996
- 383
-
Low Energy Beam Extraction in Terms of Magnetic Field, Electric Field and Ion OpticsIto, H. / Bryan, N. et al. | 1996
- 387
-
Improved Pumping Strategy for Ion Implanter End StationsLessard, P. A. / Ash, G. S. / Unger, R. et al. | 1996
- 390
-
A Beam Line Test Stand for Automation and Ion Source DevelopmentsAl-Bayati, A. / Foad, M. / Marin, T. / Young, P. et al. | 1996
- 394
-
Bernas Source for the Precision Implant 9200Vella, M. C. / Hacker, W. / Price, S. W. / Reilly, T. et al. | 1996
- 396
-
The Ion Beam Optics of a Single Wafer High Current Ion ImplanterWhite, N. R. / Sieradzki, M. / Renau, A. et al. | 1996
- 400
-
Compact Broad Beam Ion Implantation of 25 keV N^+ in SiliconSchlemm, H. et al. | 1996
- 404
-
Ion Source Improvement Program for the Varian VIISion Ion ImplanterGammel, G. / Pennisi, T. / Smatlak, D. / Sullivan, P. et al. | 1996
- 407
-
Bernas Ion Source for Genus Tandetron Ion ImplantersSakase, T. / Maciejowski, P. E. / Leavitt, W. H. / Tokoro, N. et al. | 1996
- 411
-
A Fast-Response Dual-Crucible Vaporizer for the Genus 1510/1520 MeV Ion ImplantersLaFontaine, M. / Sakase, T. / Tokoro, N. / Campbell, S. et al. | 1996
- 414
-
Performance and Lifetime of the Extended Life Ion SourceHorsky, T. / Chen, J. / Rutishauser, H. / Sinclair, F. et al. | 1996
- 418
-
Effects of Mixing Low-Z Gases on a 2.45-GHz Multiply Charged Ion SourceKato, Y. / Saitoh, M. / Kubo, Y. / Ishii, S. et al. | 1996
- 422
-
Efficient Medium Current He^+ Beam Extraction Sustained by Auxiliary Plasma Formation in the Ion Source by Solid MaterialKretly, L. C. / De Queiroz, J. E. C. et al. | 1996
- 424
-
Beam Current and Source Life Enhancement of the Bernas Ion Source for the Precision Implant 9500xR and xR80Foad, M. A. / Patel, D. / Burgess, C. / Devaney, A. et al. | 1996
- 428
-
Plasma Flood System for the Precision Implant 9200Vella, M. C. / Aoki, N. / Ito, H. / Asechi, H. et al. | 1996
- 432
-
Plasma Flood System-Physics of Low Energy Electron Generation, Plasma Coupling, Electron Transport and Surface Charge Neutralization on WaferIto, H. / Current, M. I. et al. | 1996
- 436
-
The Ibis 1000 SIMOX Production ImplanterRyding, G. / Smick, T. H. / Farley, M. / Cordts, B. F. et al. | 1996
- 440
-
Implant 9500xR: A High Productivity Implantation System for 5E10-1E16 Ion.com^-^2 Dose and 5keV-750keV Energy ApplicationsAdibi, B. / Edwards, P. et al. | 1996
- 443
-
The Beam Performance of the Genus Tandetron 1520 MeV ImplanterTokoro, N. / Sakase, T. / Bowen, C. M. / Maciejowski, P. E. et al. | 1996
- 447
-
Factors Affecting the Design of the Applied Materials xR80 Implant FamilyLowrie, C. / England, J. / Hunter, A. / Burgin, D. et al. | 1996
- 450
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The VIISion 80 and VIISion 200 Ion Implanter Beam LinesRenau, A. / Smatlak, D. / Angel, G. C. / Mack, M. E. et al. | 1996
- 454
-
Performance Characteristics of the Genus Inc. Tandetron[TM] 1520 MeV Ion Implantation SystemO'Connor, J. P. / Chase, M. S. / Richards, S. L. F. / Tokoro, N. et al. | 1996
- 458
-
Scanned Area and Batch Size Effects on Productivity for 150, 200 and 300 mm WafersCurrent, M. I. / Kindersley, P. / Thomases, B. et al. | 1996
- 462
-
Productivity Brush-Up of the Nissin EXCEED2000 Medium Current ImplanterNagai, N. / Naito, M. / Matsumoto, T. / Nishikawa, K. et al. | 1996
- 466
-
The VIISion 80 and VIISion 200: High Current Ion Implantation Systems for Greater Throughput with Excellent Performance at Low to High DosesLundquist, P. / Pedersen, B. / Ackerman, D. / Brown, D. et al. | 1996
- 470
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The Applied Materials xRLEAP Ion Implanter for Ultra Shallow Junction FormationEngland, J. / Joyce, L. / Burgess, C. / Moffatt, S. et al. | 1996
- 474
-
Ion Implant COO Modeling: Does It Give Us What We Want?Beeston, B. E. P. et al. | 1996
- 478
-
Charge State Contamination During Ion Implantation of Triply Charge PhosphorusDyer, D. E. et al. | 1996
- 482
-
Enhanced Utilization of SDS Cylinder Gases on the Eaton NV 8200P Ion ImplanterBrubaker, S. R. / Spear, J. M. / Arrale, A. M. et al. | 1996
- 486
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Implementation of a Universal Exhaust Solution for Implanter Fire PreventionMurto, R. W. et al. | 1996
- 490
-
Low Dose Performance of a High Current Ion Implanter in ProductionAngelo, D. A. St. / Rendon, M. J. / Dyer, D. E. / Breeden, T. A. et al. | 1996
- 494
-
The Use of a High Current Implanter for 5E10-E12 Dose Range ImplantsClarke, N. L. H. / Wauk, M. T. / De Cock, G. / Lee, R. M. et al. | 1996
- 498
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Thermawave[TM] and Substrate Considerations for Low Dose ImplantsLee, R. M. / Castle, M. D. S. / Clarke, N. L. H. / De Cock, G. et al. | 1996
- 501
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On Board Statistical Process Control on the NV-GSD Series Ion ImplanterSedgewick, J. E. / Franceschelli, A. J. / Hazelton, J. / Malenfant, J. et al. | 1996
- 505
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Complete Management of Implant Misprocessing Risk Through Computer AutomationAxan, B. / Pivin, L. / Irle, J. et al. | 1996
- 509
-
Experimental Design for Equipment Qualification and MatchingTripsas, N. / Johnson, R. et al. | 1996
- 512
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Ion Implanter Diagnostics Usign SurfaceSIMSSmith, S. P. / Chia, V. K. F. / Yang, M. H. et al. | 1996
- 516
-
The Effect of Beam Scanning Methods in Process TransferTripsas, N. H. et al. | 1996
- 519
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Manufacturing Advantages of Single Wafer High Current Ion ImplantationSieradzki, M. et al. | 1996
- 523
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Low Energy, Low Dose Performance of a High Energy ImplanterDyer, D. E. / Angelo, D. A. St. et al. | 1996
- 527
-
Range and Damage Distributions in Ultra-Low Energy Boron Implantation into SiliconHatxopoulos, N. / Suder, S. / Van den Berg, J. A. / Donnelly, S. E. et al. | 1996
- 531
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Characterizing Crystal Lattice Damage in High Energy Implants Using Interfernce Contrast MicroscopyFlesher, P. / Borden, P. / Lu, T. / Hahn, S. K. et al. | 1996
- 535
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Molecular Dynamics Simulation of Low Energy Boron and Arsenic Implant into SiliconBeardmore, K. M. / Cai, D. / Groenbech-Jensen, N. et al. | 1996
- 539
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Understanding Implant Damage by Implant Channeling Profile MeasurementsPackan, P. / Kennel, H. / Thompson, S. / Corcoran, S. et al. | 1996
- 543
-
An Electronic Stopping Power Model for Monte Carlo and Molecular Dynamics Simulation of Ion Implantation into SiliconCai, D. / Groenbech-Jensen, N. / Snell, C. M. / Beardmore, K. M. et al. | 1996
- 547
-
An Accurate Monte Carlo Binary Collision Model for BF~2 Implants into (100) Single-Crystal SiliconYang, S.-H. / Morris, S. J. / Tian, S. / Parab, K. et al. | 1996
- 551
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Comparisons of UT-MARLOWE Predictions of Implant-Induced Damage with Experimentally Measured Amorphous Layer ThicknessMorris, M. F. / Tian, S. / Yang, S.-H. / Morris, S. J. et al. | 1996
- 555
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A Physical Model for the Role of Dose and Dose Rate on Amorphous Depth GenerationPrussin, S. / Zhang, P. F. et al. | 1996
- 559
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Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow As-Implanted Profiles Obtained by Low Energy B, BF~2, and As Ion ImplantationParab, K. B. / Morris, M. F. / Yang, S.-H. / Morris, S. J. et al. | 1996
- 563
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An Accurate and Computationally Efficient Model for Phosphorus Implants into (100) Single-Crystal SiliconMorris, S. / Ghante, V. / Lam, L. M. / Yang, S.-H. et al. | 1996
- 567
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Ranges and Moments of Depth Distributions of Boron and Phosphorus Implanted into Silicon in the Energy Range 1.7-5.0 MeV with an Eaton NV-GSD/VHE ImplanterRubin, L. / Shaw, W. / Jones, M. A. / Wilson, R. G. et al. | 1996
- 571
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Medium and High Energy Phosphorus Implants into SiliconWhalen, P. M. / Lavine, J. P. / Zheng, L. et al. | 1996
- 575
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Nondestructive Determination of Boron Doses in Semiconductor Materials Using Neutron Depth ProfilingUenleu, K. / Saglam, M. / Wehring, B. W. / Hossain, T. Z. et al. | 1996
- 579
-
SIMS and Modeling of Ion Implants into PhotoresistGlawischnig, H. / Parks, C. C. et al. | 1996
- 583
-
Wafer Temperature and Stress Profiles in an MeV Ion Implanter Using the Finite-Element MethodLaFontaine, M. / Tokoro, N. / O'Connor, J. P. et al. | 1996
- 587
-
Effects of He-Ion Irradiation on the Thermal Depth Profile of NickelKurowski, D. / Kalus, G. / Bein, B. K. / Pelzl, J. et al. | 1996
- 591
-
Removal of Hydrogen from 2H::Si(100) by Sputtering and Recoil ImplantationTesauro, M. R. / Underwood, G. / Lowell, J. / Campion, A. et al. | 1996
- 595
-
Low Energy Ar^+ Cleaning, Damage and Sputtering of InP{100} SurfacesSung, M. M. / Lee, S. H. / Lee, S. M. / Marton, D. et al. | 1996
- 599
-
A Review of SIMS Techniques for Characterization of Ultra Low Energy Ion ImplantsSmith, S. P. / Cilia, V. K. F. / Hitzman, C. J. / Mount, G. et al. | 1996
- 603
-
Analysis of Sub-1 keV Implants in Silicon Using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter EvaluatedFoad, M. A. / England, J. G. / Moffatt, S. / Armour, D. G. et al. | 1996
- 607
-
Ultra-Shallow Junction Formation Using Very Low Energy B and BF~2 SourcesOsburn, C. M. / Downey, D. F. / Felch, S. B. / Lee, B. S. et al. | 1996
- 611
-
Fluorine Effects in BF^+ Implants at Various EnergiesFelch, S. B. / Lee, B. S. / Downey, D. F. / Zhao, Z. et al. | 1996
- 615
-
Role of Silicon Surface in the Removal of Point Defects in Ultra-Shallow JunctionsSultan, A. / Banerjee, S. / List, S. / Rodder, M. et al. | 1996
- 618
-
The Effect of End of Range Loops on Transient Enhanced Diffusion in SiJones, K. S. / Moller, K. / Chen, J. / Puga-Lambers, M. et al. | 1996
- 622
-
TED of Boron in Presence of EOR Defects: The Role of the Evolution of Si Self-Interstitial Supersaturation Between the LoopsBonafos, C. / De Mauduit, B. / Omri, M. / BenAssayag, G. et al. | 1996
- 626
-
Transient Enhanced Diffusion and Defect Studies in B Implanted SiLiu, J. / Krishnamoorthy, V. / Jones, K. S. / Law, M. E. et al. | 1996
- 630
-
A Comparison of Boron and Phosphorus Diffusion and Dislocation Loop Growth from Silicon Implants into SiliconXu, J. / Law, M. E. et al. | 1996
- 634
-
Effect of Additional Low Temperature RTA on Ultra-Shallow p^+-n Junction FormationLee, K.-H. / Oh, J.-G. / Cho, B.-J. / Kim, J.-C. et al. | 1996
- 638
-
Energy Dependence of Transient-Enhanced-Diffusion in Low Energy High Dose Arsenic Implants in SiliconKrishnamoorthy, V. / Beaudet, B. / Jones, K. S. / Venables, D. et al. | 1996
- 642
-
N-Channel MOS FET Degradation by Source/Drain ImplantationFuse, G. / Shibata, S. / Kato, Y. et al. | 1996
- 646
-
Surface and Interface Roughness After Thermal Oxidation of As, B and Si Implanted Silicon WafersRaineri, V. / Iacona, F. / La Via, F. / Camalleri, C. M. et al. | 1996
- 650
-
Annealing Effects on Surface Morphology of Si(100)Lee, S. M. / Lee, S. H. / Sung, M. M. / Marton, D. et al. | 1996
- 654
-
Al Precipitate Evolution in Epitaxial Silicon Layers Induced by Thermal OxidationRimini, E. / Galvagno, G. / La Ferla, A. / Raineri, V. et al. | 1996
- 658
-
Leakage Current Evaluation for pn Junctions Formed in DC and RF MeV Ion Implanted WellsYanagisawa, Y. / Honda, M. / Ogasawara, M. / Natsuaki, N. et al. | 1996
- 661
-
Annealing Behavior of a Doubly MeV Implanted SiliconCho, N.-H. / Huh, T.-H. / Jang, Y.-T. / Ro, J.-S. et al. | 1996
- 665
-
Carbon Co-Implantation for Ultra-Shallow P^+-N Junction FormationCraig, M. / Sultan, A. / Banerjee, S. et al. | 1996
- 668
-
The Lifetime Distribution of Excess Carriers in H^+ Ion Implanted Silicon by Photoconductive Frequency Resolved SpectroscopyNiby, M. A. / Li, D. / Lourenco, M. A. / Nejim, A. et al. | 1996
- 675
-
TEM Investigation of C-Si Defects in Carbon Implanted SiliconWerner, P. / Koegler, R. / Skorupa, W. / Eichler, D. et al. | 1996
- 679
-
Impurity Gettering in Damaged Regions of Si Produced by High Energy Ion ImplantationKoegler, R. / Panknin, D. / Skorupa, W. / Werner, P. et al. | 1996
- 682
-
Silicon Ion Beam EpitaxyRabalais, J. W. / Boyd, A.-B. K. J. / Marton, D. / Kulik, J. et al. | 1996
- 686
-
SiGe and SiGeC Surface Alloy Formation Using High-Dose Implantation and Solid Phase EpitaxyLu, X. / Cheung, N. W. et al. | 1996
- 690
-
Effects of Ion Beam Mixing on the Formation of SiGe Nanocrystals by Ion ImplantationZhu, J. G. / White, C. W. / Budai, J. D. / Withrow, S. P. et al. | 1996
- 694
-
Activation Study of Boron Doped Ion Beam Synthesised Si-GeGwiliiam, R. M. / Curello, G. / Sealy, B. J. / Rodriguez, A. et al. | 1996
- 698
-
Ion Implantation Induced Damage in Relaxed Si~1~-~xGe~xBarklie, R. C. / O'Raifeartaigh, C. / Nylandsted-Larsen, A. / Priolo, F. et al. | 1996
- 702
-
Electrical Characterisation of Magnesium and Tellurium Implanted Indium Gallium ArsenideGwilliam, R. M. / Anjum, M. / Sealy, B. J. / Mynard, J. E. et al. | 1996
- 705
-
Implant Activation and Redistribution of Dopants in GaNZolper, J. C. / Pearton, S. J. / Wilson, R. G. / Stall, R. A. et al. | 1996
- 709
-
Ion Beam Synthesis of SiC in Silicon-on-InsulatorKoegler, R. / Reuther, H. / Voelskow, M. / Skorupa, W. et al. | 1996
- 713
-
Damage Behavior and Annealing of Germanium Implanted 6H-SiCPacaud, Y. / Heera, V. / Yankov, R. A. / Koegler, R. et al. | 1996
- 717
-
Ion Beam Induced Deposition of Tungsten on SiliconMcLaren, M. G. / Carter, G. / Nobes, M. J. et al. | 1996
- 721
-
A Study on the As Redistribution in -FeSi~2 Film Prepared by Reactive Deposition EpitaxyWang, L. / Lin, C. / Chen, Z. / Zou, S. et al. | 1996
- 725
-
Ferromagnetic Resonance Investigatons of Ion Beam Modified Fe- and FeNi-FilmsKurowski, D. / Meckenstock, R. / Pelzl, J. / Brand, K. et al. | 1996
- 729
-
In-Plane Texture Study of the Yttria-Stabilized Zirconia Films Fabricated by Ion-Beam-Assisted DepositionYuan, J. / Yang, G. / Mao, Y. / Ren, X. et al. | 1996
- 733
-
Toughening of Thin Films by High Energy Ion BeamsJain, A. / Loganathan, S. / Jain, U. et al. | 1996
- 737
-
Proximity Gettering of Iron in Separation-By-Implanted-Oxygen WafersSkorupa, W. / Yankov, R. A. / Hatzopoulos, N. / Danilin, A. B. et al. | 1996
- 740
-
Suppression of Oxidation Enhanced Boron Diffusion in Silicon by Carbon Implantation and Characterization of MOSFETs with Carbon Implanted ChannelsBan, I. / Oeztuerk, M. C. / Demirlioglu, E. et al. | 1996
- 745
-
Source/Drain Profile Engineering with Plasma ImplantationJones, E. C. / Cheung, N. W. / Shao, J. / Denholm, A. S. et al. | 1996
- 749
-
Materials Properties of B-Doped Si by Low Energy Plasma Source Ion ImplantationMatyi, R. J. / Brunco, D. P. / Felch, S. B. / Ishida, E. et al. | 1996
- 753
-
Formation of Deep Sub-Micron Buried Channel pMOSFETs with Plasma DopingFelch, S. B. / Brunco, D. P. / Lee, B. S. / Ahmad, A. et al. | 1996
- 757
-
Ion Implantation by Plasma Immersion TechniqueThomae, R. / Bender, H. / Halder, J. / Hilschert, F. et al. | 1996
- 760
-
Application of a Pulsed, RF-Driven, Multicusp Source for Low Energy Plasma Immersion Ion ImplantationWengrow, A. B. / Leung, K. N. / Perkins, L. T. / Pickard, D. S. et al. | 1996
- 764
-
Operational Phase-Space of Separation by Plasma Implantation of Oxygen (SPIMOX)Iyer, S. S. K. / Lu, X. / Liu, J. / Linder, B. et al. | 1996
- 768
-
Cluster Ion Implantation for Shallow Junction FormationMatsuo, J. / Takeuchi, D. / Aoki, T. / Yamada, I. et al. | 1996
- 772
-
Shallow Junction Formation by Polyatomic Cluster Ion ImplantationTakeuchi, D. / Shimada, N. / Matsuo, J. / Yamada, I. et al. | 1996
- 776
-
Molecular Ion Implantation Technique For Obtaining The Same Depth Profile For The Component AtomsIshikawa, J. / Tsuji, H. / Mimura, M. / Gotoh, Y. et al. | 1996
- 780
-
Ion Implantation of Large Wafers and Flat Panel DisplaysAitken, D. et al. | 1996
- 784
-
Effect of Antenna Structures on Charging Damage in PIIIEn, W. G. / Cheung, N. W. et al. | 1996
- 788
-
The Effect of Wells on Gate Oxide Charging during Plasma ProcessingLinder, B. P. / En, W. G. / Cheung, N. W. et al. | 1996
- 792
-
Reduction of Lateral Parasitic Current Flow by Buried Recombination Layers Formed by High Energy Implantation of C or O into SiliconBogen, S. / Herden, M. / Frey, L. / Ryssel, H. et al. | 1996
- 796
-
Buried Layer/Connecting Layer High Energy Implantation for Improved CMOS Latch-UpMorris, W. / Rubin, L. / Wristers, D. et al. | 1996
- 800
-
Development of ECR Sheet Plasma Source for Ion-Enhanced Reactive Sputter DepositionWakatsuchi, M. / Ishii, S. / Kato, Y. / Sunagawa, M. et al. | 1996
- 804
-
New Developments in SDS Gas Source Technology for Ion ImplantationMcManus, J. V. / Edwards, D. / Olander, W. K. / Kirk, R. et al. | 1996
- 808
-
Surface Processing by Gas Cluster Ion BeamsToyoda, N. / Matsuo, J. / Yamada, I. et al. | 1996
- 812
-
Self-Supporting Thin Si Single Crystals Prouced by Ion Implantation and Selective Etching Techniques and Several ApplicationsSaitoh, K. / Nakao, S. / Niwa, H. / Miyagawa, S. et al. | 1996
- 816
-
Characterization of P^+ Implanted SiO~2 PowdersKajiyama, K. / Suzuki, Y. / Kokubo, T. / Kawashita, M. et al. | 1996
- 824
-
Ion Beam Synthesis of Nanocrystals and Quantum Dots in Optical MaterialsWhite, C. W. / Budai, J. D. / Winthrow, S. P. / Zhu, J. G. et al. | 1996
- i
-
Proceedings of 11th International Conference on Ion Implantation Technology| 1996
-
The Effect of Radiation Defects on the Localization of Nitrogen Implanted into SiliconDunilin, A. B. / Scherbachev, K. D. / Bublik, V. T. / Saraikin, V. V. et al. | 1996