Recent advances in III-nitride materials: characterization and device applications (Invited Paper) [3179-01] (English)
- New search for: Razeghi, M.
- New search for: Zhang, X.
- New search for: Kung, P.
- New search for: Saxler, A.
- New search for: Razeghi, M.
- New search for: Zhang, X.
- New search for: Kung, P.
- New search for: Saxler, A.
- New search for: Rogalski, A.
In:
Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology
3179
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2-11
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1996
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ISBN:
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ISSN:
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Title:Recent advances in III-nitride materials: characterization and device applications (Invited Paper) [3179-01]
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Contributors:Razeghi, M. ( author ) / Zhang, X. ( author ) / Kung, P. ( author ) / Saxler, A. ( author ) / Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics
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Conference:Symposium; 12th, Solid state crystals: materials science and applications: Solid state crystals in opteolectronics and semiconductor technology ; 1996 ; Zakopane; Poland
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Published in:
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Publisher:
- New search for: SPIE
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Publication date:1996-01-01
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Size:10 pages
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Remarks:Also known as SSCs'96
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2
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Recent advances in III-nitride materials, characterization and device applicationsRazeghi, Manijeh / Zhang, Xiaolong / Kung, Patrick / Saxler, Adam W. / Walker, Danielle / Lim, Khee Y. / Kim, K. S. et al. | 1997
- 2
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Recent advances in III-nitride materials: characterization and device applications (Invited Paper) [3179-01]Razeghi, M. / Zhang, X. / Kung, P. / Saxler, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 12
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Growth physics of silicon-based heterostructures in MBE processesHerman, Marian A. et al. | 1997
- 12
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Growth-physics of silicon-based heterostructures in MBE processes (Invited Paper) [3179-02]Herman, M. A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 25
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RF sputtering deposition of CdTe on GaAs substrate [3179-03]Adamiec, K. / Rutkowski, J. / Bednarek, S. / Michalski, E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 25
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RF sputtering deposition of CdTe on GaAs substrateAdamiec, Krzysztof / Rutkowski, Jaroslaw / Bednarek, S. / Michalski, E. et al. | 1997
- 28
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Intersubband absorption in multiple quantum wells (Invited Paper) [3179-04]Zaluzny, M. / Nalewajko, C. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 28
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Intersubband absorption in multiple quantum wellsZaluzny, Miroslaw / Nalewajko, C. et al. | 1997
- 33
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Photovoltaic effects from nano- and microstructured Si (Invited Paper) [3179-05]Uenal, B. / Bayliss, S. C. / Harris, P. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 33
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Photovoltaic effects from nano- and microstructured SiUnal, B. / Bayliss, Sue C. / Harris, P. J. et al. | 1997
- 41
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Effect of optical phonon confinement on Raman spectra of porous silicon [3179-06]Zuk, J. / Kulik, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 41
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Effect of optical phonon confinement on Raman spectra of porous siliconZuk, J. / Kulik, Miroslaw et al. | 1997
- 46
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Time-resolved spectroscopy of low-dimensional structures based on porous silicon [3179-07]Lukasiak, Z. / Bala, W. / Kowalczyk, A. / Nossarzewska-Orlowska, E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 46
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Time-resolved spectroscopy of low-dimensional structures based on porous siliconLukasiak, Zbigniew / Bala, Waclaw / Kowalczyk, Andrzej / Nossarzewska-Orlowska, Elzbieta et al. | 1997
- 52
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New unsubstituted phthalocyanines: structure-properties relationKubiak, Ryszard / Janczak, Jan et al. | 1997
- 52
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New unsubstituted phthalocyanines: structure-properties relation [3179-08]Kubiak, R. / Janczak, J. / Trzebiatowski, W. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 56
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Nanosize microstructure formation by anodizing the thin film structures [3179-09]Parkoun, V. M. / Petrov, N. P. / Lynkov, L. M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 56
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Nanosize microstructure formation by anodizing the thin film structuresParkoun, V. M. / Petrov, N. P. / Lynkov, L. M. et al. | 1997
- 59
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Detection of oxygen in porous silicon by nuclear reaction ^1^6O(,)^1^6O [3179-10]Kulik, M. / Zuk, J. / Krzyzanowska, H. / Ochalski, T. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 59
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Detection of oxygen in porous silicon by nuclear reaction 16O(alpha,alpha)16OKulik, Miroslaw / Zuk, J. / Krzyzanowska, H. / Ochalski, T. J. / Kobzev, A. P. et al. | 1997
- 62
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Spectroscopical characterization of bacterial reaction center Langmuir-Blodgett monolayersWrobel, Danuta / Goc, Jacek / Planner, Alfons / Hara, M. / Miyake, J. et al. | 1997
- 62
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Spectroscopic characterization of bacterial reaction center Langmuir-Blodgett monolayers [3179-11]Wrobel, D. / Goc, J. / Planner, A. / Hara, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 66
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Thin film materials on the basis of silver organoacetylide for photovisualizationShutova, Tatiana G. / Mikhailovskii, Yu. K. / Agabekov, Vladimir E. et al. | 1997
- 66
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Thin film material on the basis of silver organoacetylide for photovisualization [3179-12]Shutova, T. G. / Mikhailovskii, Y. K. / Agabekov, V. E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 70
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Laser-assisted deposition technique for thin semiconductor layers and low-dimensional structures growth (Invited Paper) [3179-13]Sizov, F. F. / Plyatsko, S. V. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 70
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Laser-assisted deposition technique for thin semiconductor layers and low-dimensional structures growthSizov, Fiodor F. / Plyatsko, Sergei V. et al. | 1997
- 79
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Nanocrystalline diamond for medicine [3179-14]Mitura, S. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 79
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Nanocrystalline diamond for medicineMitura, Stanislaw et al. | 1997
- 87
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Optical and electrical tests of uniformity of rf PCVD carbon coatings [3179-15]Langer, M. / Niedzielski, P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 87
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Optical and electrical tests of uniformity of rf PCVD carbon coatingsLanger, Malgorzata / Niedzielski, Piotr et al. | 1997
- 90
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Nanotribological investigations of NCD coatings covering metal slitting sawsGolabczak, A. / Niedzielski, Piotr / Mitura, Stanislaw / Zak, J. et al. | 1997
- 90
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Nanotribological investigations of NCD coatings covering metal slitting saws [3179-16]Golabczak, A. / Niedzielski, P. / Mitura, S. / Zak, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 94
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Preparation, morphology, and electrical properties of TiN1-xCx thin layersWokulski, Z. et al. | 1997
- 94
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Preparation, morphology, and electrical properties of TiN~1~-~xC~x thin layers [3179-17]Wokulski, Z. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 99
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Lithographic properties of perylenetetracarboxylic acid derivative films [3179-18]Azarko, V. A. / Scharendo, E. V. / Agabekov, V. E. / Obuchov, V. E. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 99
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Lithographic properties of perylenetetracarboxylic acid derivative filmsAzarko, Victor A. / Scharendo, E. V. / Agabekov, Vladimir E. / Obuchov, V. E. / Tochitsky, Eduard I. et al. | 1997
- 104
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Nanostructural investigations of cuprate superconductors by scanning probe methods (Invited Paper) [3179-19]Susla, B. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 104
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Nanostructural investigations of cuprate superconductors by scanning probe methodsSusla, Bronislaw et al. | 1997
- 110
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Photoreflectance spectroscopy for investigations of semiconductor structuresMisiewicz, Jan et al. | 1997
- 110
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Photoreflectance spectroscopy for investigations of semiconductor structures (Invited Paper) [3179-20]Misiewicz, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 121
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Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solutionCiorga, Mariusz / Bryja, Leszek / Misiewicz, Jan / Paszkiewicz, Regina / Panek, Marek / Paszkiewicz, Bogdan / Tlaczala, Marek J. et al. | 1997
- 121
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Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution [3179-21]Ciorga, M. / Bryja, L. / Misiewicz, J. / Paszkiewicz, R. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 125
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Photoreflectance and photoluminescence of InGaAs/GaAs structures [3179-22]Misiewicz, J. / Ciorga, M. / Sek, G. / Bryja, L. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 125
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Photoreflectance and photoluminescence of InGaAs/GaAs structuresMisiewicz, Jan / Ciorga, Mariusz / Sek, G. / Bryja, Leszek / Radziewicz, D. / Korbutowicz, Ryszard / Panek, Marek / Tlaczala, Marek J. et al. | 1997
- 129
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2D hole gas in GaAs/(AlGa)As heterostructures investigated by photoreflectance spectroscopySitarek, Piotr / Misiewicz, Jan / Hansen, Ole P. et al. | 1997
- 129
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2D hole gas in GaAsI(AlGa)As heterostructures investigated by photoreflectance spectroscopy [3179-23]Sitarek, P. / Misiewicz, J. / Hansen, O. P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 133
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Observation of the new lines in photoluminescence from MOCVD-grown GaAs [3179-24]Ciorga, M. / Misiewicz, J. / Tlaczala, M. J. / Panek, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 133
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Observation of the new lines in photoluminescence from MOCVD-grown GaAsCiorga, Mariusz / Misiewicz, Jan / Tlaczala, Marek J. / Panek, Marek / Veje, Erling et al. | 1997
- 137
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GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy [3179-25]Sek, G. / Misiewicz, J. / Kaniewska, M. / Reginski, K. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 137
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GaAs/AlGaAs complex structures examined by photoreflectance spectroscopySek, G. / Misiewicz, Jan / Kaniewska, Maria / Reginski, Kazimierz / Muszalski, Jan et al. | 1997
- 141
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Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBEBala, Waclaw / Glowacki, Grzegorz / Gapinski, Adam et al. | 1997
- 141
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Optical properties of Zn~xMg~1~-~xSe/GaAs heterojunctions grown by MBE [3179-26]Bala, W. / Glowacki, G. / Gapinski, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 147
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Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responsesKepinska, M. / Nowak, Marian et al. | 1997
- 147
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Optical and recombination parameters of GaSe obtained from interference spectroscopy of transmittance, reflectance, photoconductivity, and photomagnetoelectric responses [3179-27]Kepinska, M. / Nowak, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 151
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Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAs [3179-28]Loncierz, B. / Nowak, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 151
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Determining carrier lifetime using frequency dependence in contactless photoelectromagnetic investigations of GaAs:Te, GaAs:Si, and MQW on GaAsLoncierz, B. / Nowak, Marian et al. | 1997
- 158
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Lifetimes and band structure of electroluminescence of ZnS:Mn based cells [3179-29]Chimczak, E. / Bertrandt-Zytkowiak, M. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 158
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Lifetimes and band structure of electroluminescence of ZnS:Mn based cellsChimczak, Eugeniusz / Bertrandt-Zytkowiak, Miroslawa et al. | 1997
- 162
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Laser scanning tomograph as the tool for investigation of semiconductor materials [3179-30]Galas, J. / Daszkiewicz, M. / Kozlowski, T. / Blocki, N. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 162
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Laser scanning tomograph as the tool for investigation of semiconductor materialsGalas, Jacek / Daszkiewicz, Marek / Kozlowski, Tomasz / Blocki, Narcyz et al. | 1997
- 168
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AgBr microcrystals studied by scanning tunneling microscopy [3179-31]Gordon, W. S. / Szuba, S. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 168
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AgBr microcrystals studied by scanning tunneling microscopyGordon, W. S. / Szuba, S. et al. | 1997
- 172
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X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures [3179-32]Zaumseil, P. / Fischer, G. G. / Misiuk, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 172
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X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperaturesZaumseil, Peter / Fischer, G. G. / Misiuk, Andrzej et al. | 1997
- 176
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X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystals [3179-33]Wokulska, K. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 176
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X-ray determination of the thermal expansion of TiN, TiC and Ti(N,C) crystalsWokulska, Krystyna et al. | 1997
- 180
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Structural characteristics and applications of zirconium dioxide formed by super-high-speed thermal treatment [3179-34]Lynkov, L. M. / Soloviev, V. V. / Zhdanovich, S. V. / Petrov, N. P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 180
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Structural characteristics and applications of zirconium dioxide formed by super-high-speed thermal treatmentLynkov, L. M. / Soloviev, V. V. / Zhdanovich, S. V. / Petrov, N. P. / Bogush, V. A. et al. | 1997
- 184
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Influence of internal structure on electrical properties of 1,4-cis polybutadiene films [3179-35]Tkaczyk, S. W. / Swiatek, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 184
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Influence of internal structure on electrical properties of 1,4-cis polybutadiene filmsTkaczyk, S. W. / Swiatek-Prokop, Jozef et al. | 1997
- 190
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Electron drift mobility in some aromatic hydrocarbons [3179-36]Kania, S. / Kondrasiuk, J. / Bak, G. W. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 190
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Electron drift mobility in some aromatic hydrocarbonsKania, S. / Kondrasiuk, J. / Bak, Grzegorz W. et al. | 1997
- 194
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Electric permittivity and remanent polarization in polycrystalline Ba(Ti~1~-~xSn~x)O~3 [3179-37]Kajtoch, C. / Zmija, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 194
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Electric permittivity and remanent polarization in polycrystalline Ba(Ti1-xSnx)O3Kajtoch, Czestaw / Zmija, Jozef et al. | 1997
- 200
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HgCdTe focal plane arrays for high-performance infrared cameras (Invited Paper) [3179-38]Kozlowski, L. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 200
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HgCdTe focal plane arrays for high performance infrared camerasKozlowski, Lester J. et al. | 1997
- 212
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PtSi Schottky-barrier infrared FPAs with CDS readout (Invited Paper) [3179-39]Kimata, M. / Ozeki, T. / Nunoshita, M. / Ito, S. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 212
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PtSi Schottky-barrier infrared FPAs with CDS readoutKimata, Masafumi / Ozeki, Tatsuo / Nunoshita, Masahiro / Ito, Sho et al. | 1997
- 224
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Infrared thermal detectors versus photon detectors: II. focal plane arrays (Invited Paper) [3179-40]Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 224
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Infrared thermal detectors versus photon detectors: II. focal plane arraysRogalski, Antoni et al. | 1997
- 235
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Isotype heterojunction in HgCdTe photodiodes [3179-41]Rutkowski, J. / Jozwikowska, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 235
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Isotype heterojunction in HgCdTe photodiodesRutkowski, Jaroslaw / Jozwikowska, Alina et al. | 1997
- 242
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Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modelingMalachowski, Michal J. / Rogalski, Antoni et al. | 1997
- 242
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Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling [3179-42]Malachowski, M. J. / Rogalski, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 247
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InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]Rutkowski, J. / Raczynska, J. / Rogalski, A. / Adamiec, K. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 247
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InAsSb heterojunction photodiodes grown by liquid phase epitaxyRutkowski, Jaroslaw / Raczynska, Jolanta / Rogalski, Antoni / Adamiec, Krzysztof / Larkowski, Waldemar et al. | 1997
- 251
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Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]Adamiec, K. / Gawron, W. / Piotrowski, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 251
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Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTeAdamiec, Krzysztof / Gawron, Waldemar / Piotrowski, Jozef et al. | 1997
- 256
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Lithium niobate as the substratum for the SAW acceleration sensor [3179-45]Filipiak, J. / Solarz, L. / Ostrowski, J. / Kopycki, C. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 256
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Lithium niobate as the substratum for the SAW acceleration sensorFilipiak, Jerzy / Solarz, Lech / Ostrowski, Jerzy / Kopycki, Cezary et al. | 1997
- 260
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Activated lithium tetraborate and calcium sulphate in radiation dosimetry [3179-46]Warkocki, S. / Korman, A. / Zmija, J. / Klosowicz, S. J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 260
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Activated lithium tetraborate and calcium sulphate in radiation dosimetryWarkocki, Stanislaw / Korman, A. / Zmija, Jozef / Klosowicz, Stanislaw J. / Majchrowski, Andrzej et al. | 1997
- 263
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Neodymium doped GGG laser compared with YAP, SLGO and YAG lasersKaczmarek, Slawomir M. / Kopczynski, Krzysztof / Lukasiewicz, Tadeusz / Durygin, A. N. / Solskii, Ivan M. et al. | 1997
- 263
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Neodymium-doped GGG laser compared with YAP, SLGO and YAG lasers [3179-47]Kaczmarek, S. / Kopczynski, K. / Lukasiewicz, T. / Durygin, A. N. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 268
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Influence of gamma radiation on performance of Nd3+ doped SrLaGa3O7 lasersKaczmarek, Slawomir M. / Kopczynski, Krzysztof / Matkovskii, Andrej O. / Pajaczkowska, Anna / Pracka, Izabella et al. | 1997
- 268
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Influence of gamma radiation on performance of Nd^3^+-doped SrLaGa~3O~7? lasers [3179-48]Kaczmarek, S. / Kopczynski, K. / Matkovskii, A. O. / Pajaczkowska, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 274
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Recent advances in TLM algorithms for semiconductor transportde Cogan, Donard / Chakrabarti, A. / Kenny, C. P. et al. | 1997
- 274
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Recent advances in TLM algorithms for semiconductor transport (Invited Paper) [3179-49]De Cogan, D. / Chakrabarti, A. / Kenny, C. P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 287
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Kinetics of luminescence due to spatial correlation of traps [3179-50]Mandowski, A. / Swiatek, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 287
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Kinetics of luminescence due to spatial correlation of trapsMandowski, Arkadiusz / Swiatek-Prokop, Jozef et al. | 1997
- 294
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Simple methods for the analysis of TL glow curves [3179-51]Mandowski, A. / Mandowska, E. / Swiatek, J. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 294
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Simple methods for the analysis of TL glow curvesMandowski, Arkadiusz / Mandowska, Ewa / Swiatek-Prokop, Jozef et al. | 1997
- 298
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Space-charge-perturbed currents due to continuous carrier injectionTomaszewicz, W. et al. | 1997
- 298
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Space-charge-perturbed currents due to continuous carrier injection [3179-52]Tomaszewicz, W. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 302
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Determination of recombination cross section for free electron in n-CuInS2Cybulski, D. / Opanowicz, A. et al. | 1997
- 302
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Determination of recombination cross section for free electron in n-CuInS~2 [3179-53]Cybulski, D. / Opanowicz, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 306
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Determination of the activation energy of electron traps with fractional glow technique [3179-54]Opanowicz, A. / Pietrucha, P. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 306
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Determination of the activation energy of electron traps with fractional glow techniqueOpanowicz, A. / Pietrucha, Piotr et al. | 1997
- 310
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Determination of trap depth by analysis of the thermoluminescence peak shape [3179-55]Lukas, T. / Opanowicz, A. / Military University of Technology, Warsaw; Institute of Applied Physics et al. | 1996
- 310
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Determination of the trap depth by analysis of the thermoluminescence peak shapeLukas, T. / Opanowicz, A. et al. | 1997