Disordering of InGaN/GaN Superlattices After High-Pressure Annealing (English)
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In:
GaN and related alloys
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3.42.1
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1999
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
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Contributors:McCluskey, M. D. ( author ) / Romano, L. T. ( author ) / Krusor, B. S. ( author ) / Hofstetter, D. ( author ) / Pearton, S. J. / Materials Research Society
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Conference:Symposium, GaN and related alloys ; 1998 ; Boston; MA
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Published in:GaN and related alloys ; 3.42.1MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 537 ; 3.42.1
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Publisher:
- New search for: Materials Research Society
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Place of publication:Warrendale, Pa.
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Publication date:1999-01-01
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Size:3.42.1
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 11.8.1
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Defect Luminescence in Heavily Mg Doped GaNReshchikov, M. A. / Yi, G.-C. / Wessels, B. W. / Materials Research Society et al. | 1999
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Near Defect-Free GaN SubstratesPorowski, S. / Materials Research Society et al. | 1999
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Pyroelectric and Piezoelectric Properties of GaN-Based MaterialsShur, M. S. / Bykhovski, A. D. / Gaska, R. / Materials Research Society et al. | 1999
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InGaN/GaN/AlGaN-Based LEDs and Laser DiodesNakamura, S. / Senoh, M. / Nagahama, S. / Iwasa, N. / Materials Research Society et al. | 1999
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Mechanisms of Optical Gain in Cubic GaN and InGaNHolst, J. / Hoffmann, A. / Broser, I. / Frey, T. / Materials Research Society et al. | 1999
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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback LasersHofstetter, D. / Thornton, R. L. / Romano, L. T. / Bour, D. P. / Materials Research Society et al. | 1999
- G2
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Composition dependence of the band gap energy of InxGa1-xN layers on GaN (x<=0.15) grown by metal-organic chemical vapor depositionWagner, J. / Ramakrishnan, A. / Behr, D. / Maier, M. / Herres, N. / Kunzer, M. / Obloh, H. / Bachem, K.H. et al. | 1999
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p- and n-Type Doping of MBE Grown Cubic GaN/GaAs EpilayersAs, D. J. / Simonsmeier, T. / Busch, J. / Schoettker, B. / Materials Research Society et al. | 1999
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Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAsLisker, M. / Krtschil, A. / Witte, H. / Christen, J. / Materials Research Society et al. | 1999
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Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved PhotoluminescenceKim, H. S. / Lin, J. Y. / Jiang, H. X. / Chow, W. W. / Materials Research Society et al. | 1999
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Defect States in SiC/GaN- and SiC/AlGaN/GaN-Heterostructures Characterized by Admittance and Photocurrent SpectroscopyWitte, H. / Krtschil, A. / Lisker, M. / Christen, J. / Materials Research Society et al. | 1999
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Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBELantier, R. / Rizzi, A. / Guggi, D. / Lueth, H. / Materials Research Society et al. | 1999
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Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum WellsShan, W. / Ager, J. W. / Walukiewicz, W. / Haller, E. E. / Materials Research Society et al. | 1999
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Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN~2Zhu, L. D. / Maruska, P. H. / Norris, P. E. / Yip, P. W. / Materials Research Society et al. | 1999
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Influence of Doping on the Lattice Dynamics of Gallium NitrideKaschner, A. / Siegle, H. / Hoffmann, A. / Thomsen, C. / Materials Research Society et al. | 1999
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Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam EpitaxyEinfeldt, S. / Boettcher, T. / Hommel, D. / Selke, H. / Materials Research Society et al. | 1999
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Disordering of InGaN/GaN Superlattices After High-Pressure AnnealingMcCluskey, M. D. / Romano, L. T. / Krusor, B. S. / Hofstetter, D. / Materials Research Society et al. | 1999
- G3
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Piezoelectric level splitting in GaInN/GaN quantum wellsWetzel, C. / Takeuchi, T. / Amano, H. / Akasaki, I. et al. | 1999
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Temperature Effect on the Quality of AlN Thin FilmsThompson, M. P. / Drews, A. R. / Huang, C. / Auner, G. W. / Materials Research Society et al. | 1999
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High-Quality Hydrothermal ZnO CrystalsSuscavage, M. / Harris, M. / Bliss, D. / Yip, P. / Materials Research Society et al. | 1999
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Optical Investigations of AlGaN on GaN Epitaxial FilmsSteude, G. / Christmann, T. / Meyer, B. K. / Goeldner, A. / Materials Research Society et al. | 1999
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Strong Piezoelectric Effects in Unstrained GaN Quantum WellsLanger, R. / Simon, J. / Konovalov, O. / Pelekanos, N. T. / Materials Research Society et al. | 1999
- G3
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Extended defects in GaN: a theoretical studyElsner, J. / Frauenheim, T. / Haugk, M. / Gutierrez, R. / Jones, R. / Heggie, M.I. et al. | 1999
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Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN Using Tungsten MaskKawaguchi, Y. / Nambu, S. / Sone, H. / Yamaguchi, M. / Materials Research Society et al. | 1999
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Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Bandstructures and Device ConsequencesSher, A. / Van Schilfgaarde, M. / Berding, M. A. / Krishnamurthy, S. / Materials Research Society et al. | 1999
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Studies on Carbon as Alternative p-Type Dopant for Gallium NitrideBirkle, U. / Fehrer, M. / Kirchner, V. / Einfeldt, S. / Materials Research Society et al. | 1999
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Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN AlloysMuth, J. F. / Brown, J. D. / Johnson, M. A. L. / Yu, Z. / Materials Research Society et al. | 1999
- G6
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NiIn as an ohmic contact to p-GaNIngerly, D.B. / Chang, Y.A. / Chen, Y. et al. | 1999
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GaN p-n Structures Fabricated by Mg Ion ImplantationKalinina, E. V. / Solov'ev, V. A. / Zubrilov, A. S. / Dmitriev, V. A. / Materials Research Society et al. | 1999
- G6
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Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactorChuang, R.W. / Zou, A.Q. / Lee, H.P. / Dong, Z.J. / Xiong, F.F. / Shih, R. / Bremser, M. / Juergensen, H. et al. | 1999
- G6
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Piezoelectric field effect on optical properties of GaN/GaInN/AlGaN quantum wellsIm, Jin Seo / Kollmer, H. / Gfroerer, O. / Off, J. / Scholz, F. / Hangleiter, A. et al. | 1999
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Crystal Structure and Defects in Nitrogen-Deficient GaNOktyabrsky, S. / Dovidenko, K. / Sharma, A. K. / Joshkin, V. / Materials Research Society et al. | 1999
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Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum WellsCho, Y.-H. / Schmidt, T. J. / Bidnyk, S. / Song, J. J. / Materials Research Society et al. | 1999
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Thermal Stability of GaN Investigated by Raman ScatteringKuball, M. / Demangeot, F. / Frandon, J. / Renucci, M. A. / Materials Research Society et al. | 1999
- G6
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Rapid thermal processing of implanted GaN up to 1500 degree CCao, X.A. / Pearton, S.J. / Singh, R.K. / Abernathy, C.R. / Han, J. / Shul, R.J. / Rieger, D.J. / Zolper, J.C. / Wilson, R.G. / Fu, M. et al. | 1999
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Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes With Quantum WellsYunovich, A. E. / Kudryashov, V. E. / Turkin, A. N. / Kovalev, A. N. / Materials Research Society et al. | 1999
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Monitoring and Controlling of Strain During MOCVD of AlGaN for UV OptoelectronicsHan, J. / Crawford, M. H. / Shul, R. J. / Hearne, S. J. / Materials Research Society et al. | 1999
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Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch EpitaxyHickman, R. / Klaassen, J. J. / Van Hove, J. M. / Wowchak, A. M. / Materials Research Society et al. | 1999
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Fabrication of Smooth GaN-Based Laser FacetsStocker, D. A. / Schubert, E. F. / Boutros, K. S. / Redwing, J. M. / Materials Research Society et al. | 1999
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Piezoelectric Properties of GaN Self-Organized Quantum DotsDaudin, B. / Widmann, F. / Simon, J. / Feuillet, G. / Materials Research Society et al. | 1999
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Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-SurfactantHirayama, H. / Aoyagi, Y. / Tanaka, S. / Materials Research Society et al. | 1999
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GaN Homoepitaxy for Device ApplicationsKamp, M. / Kirchner, C. / Schwegler, V. / Pelzmann, A. / Materials Research Society et al. | 1999
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Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam EpitaxySeong, T.-Y. / Bae, I.-T. / Zhao, Y. / Tu, C. W. / Materials Research Society et al. | 1999
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Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVDXie, Z. Y. / Wei, C. H. / Li, L. Y. / Edgar, J. H. / Materials Research Society et al. | 1999
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Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step ProcessMarchand, H. / Ibbetson, J. P. / Fini, P. T. / Wu, X. H. / Materials Research Society et al. | 1999
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Defect Complexes and Non-Equilibrium Processes Underlying the p-Type Doping of GaNReboredo, F. A. / Pantelides, S. T. / Materials Research Society et al. | 1999
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Monte Carlo Simulation of Hall Effect in n-Type GaNAlbrecht, J. D. / Ruden, P. P. / Bellotti, E. / Brennan, K. F. / Materials Research Society et al. | 1999
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Photoluminescence of FS-GaN Treated in Alcoholic Sulfide SolutionsZhilyaev, Y. V. / Kompan, M. E. / Konenkova, E. V. / Raevskii, S. D. / Materials Research Society et al. | 1999
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Piezoelectric Field Effect on Optical Properties of GaN/GalnN/AlGaN Quantum WellsIm, J. S. / Kollmer, H. / Gfroerer, O. / Off, J. / Materials Research Society et al. | 1999
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Rapid Thermal Processing of Implanted GaN Up to 1500CCao, X. A. / Pearton, S. J. / Singh, R. K. / Abernathy, C. R. / Materials Research Society et al. | 1999
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Study of Thin Films Polarity of Group III NitridesDovidenko, K. / Oktyabrsky, S. / Narayan, J. / Razeghi, M. / Materials Research Society et al. | 1999
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Physics-Based Intrinsic Model for AlGaN/GaN HEMTsWu, S. / Webster, R. T. / Anwar, A. F. M. / Materials Research Society et al. | 1999
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Etch Processing of III-V NitridesEddy, C. R. / Materials Research Society et al. | 1999
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Material Properties of GaN in the Context of Electron DevicesMorkoc, H. / Cingolani, R. / Lambrecht, W. / Gil, B. / Materials Research Society et al. | 1999
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Composition Dependence of the Bandgap Energy of In~xGa~1~-~xN Layers on GaN (x 0.15) Grown by Metalorganic Chemical Vapor DepositionWagner, J. / Ramakrishnan, A. / Behr, D. / Maier, M. / Materials Research Society et al. | 1999
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Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral OvergrowthMao, Z. / McKernan, X. / Carter, C. B. / Yang, W. / Materials Research Society et al. | 1999
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Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase EpitaxyPaskova, T. / Svedberg, E. B. / Madsen, L. D. / Yakimova, R. / Materials Research Society et al. | 1999
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Relaxation Phenomena in GaN/AlN/6H-SiC HeterostructuresEdwards, N. V. / Batchelor, A. D. / Buyanova, I. A. / Madsen, L. D. / Materials Research Society et al. | 1999
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GaN: From Selective Area to Epitaxial Lateral OvergrowthLi, X. / Bishop, S. G. / Coleman, J. J. / Materials Research Society et al. | 1999
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Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth TechniquesLinthicum, K. J. / Gehrke, T. / Thomson, D. B. / Tracy, K. M. / Materials Research Society et al. | 1999
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Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTsChiu, S.-Y. / Anwar, A. F. M. / Wu, S. / Materials Research Society et al. | 1999
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Effect of Oxygen Ion Implantation in Gallium NitrideJiang, W. / Weber, W. J. / Thevuthasan, S. / Exarhos, G. J. / Materials Research Society et al. | 1999
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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) SiliconBidnyk, S. / Little, B. D. / Cho, Y. H. / Krasinski, J. / Materials Research Society et al. | 1999
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Ensemble Monte Carlo Study of Electron Transport in Bulk Indium NitrideBellotti, E. / Doshi, B. / Brennan, K. F. / Ruden, P. P. / Materials Research Society et al. | 1999
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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDsKennedy, T. A. / Glaser, E. R. / Carlos, W. E. / Ruden, P. P. / Materials Research Society et al. | 1999
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Generation Recombination Noise in GaN Photoconducting DetectorsMisra, M. / Doppalapudi, D. / Sampath, A. V. / Moustakas, T. D. / Materials Research Society et al. | 1999
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Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)Gillis, H. P. / Christopher, M. B. / Martin, K. P. / Choutov, D. A. / Materials Research Society et al. | 1999
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Influence of Active Nitrogen Species on the Nitridation Rate of SapphirePtak, A. J. / Ziemer, K. S. / Millecchia, M. R. / Stinespring, C. D. / Materials Research Society et al. | 1999
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Structure of AlN on Si (111) Deposited With Metalorganic Vapor Phase EpitaxyRehder, E. / Zhou, M. / Zhang, L. / Perkins, N. R. / Materials Research Society et al. | 1999
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Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum WellsLefebure, P. / Gil, B. / Allegre, J. / Mathieu, H. / Materials Research Society et al. | 1999
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Spectroscopy of Proton Implanted GaNWeinstein, M. G. / Stavola, M. / Song, C. Y. / Bozdog, C. / Materials Research Society et al. | 1999
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Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based HeterojunctionsHo, W. Y. / Fong, W. K. / Surya, C. / Tong, K. Y. / Materials Research Society et al. | 1999
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Theory of the Gain Characteristics of InGaN/AlGaN QD LasersAndreev, A. D. / O'Reilly, E. P. / Materials Research Society et al. | 1999
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Focused Ion Beam Etching of GaNFlierl, C. / White, I. H. / Kuball, M. / Heard, P. J. / Materials Research Society et al. | 1999
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Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic BehaviorKaminska, E. / Piotrowska, A. / Jasinski, J. / Kozubowski, J. / Materials Research Society et al. | 1999
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Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum WellsCho, Y.-H. / Little, B. D. / Gainer, G. H. / Song, J. J. / Materials Research Society et al. | 1999
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Mechanism for Radiative Recombination in In~0~.~1~5Ga~0~.~8~5N/GaN Multiple Quantum Well StructuresMonemar, B. / Bergman, J. P. / Dalfors, J. / Pozina, G. / Materials Research Society et al. | 1999
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Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide SubstrateGehrke, T. / Linthicum, K. J. / Thomson, D. B. / Rajagopal, P. / Materials Research Society et al. | 1999
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Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor DepositionKim, J.-H. / Yang, G. M. / Choi, S. C. / Choi, J. Y. / Materials Research Society et al. | 1999
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Effects of Susceptor Geometry on GaN Growth on Si(111) With a New MOCVD ReactorGao, Y. / Gulino, D. A. / Higgins, R. / Materials Research Society et al. | 1999
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Enhanced GaN Decomposition at MOVPE PressuresKoleske, D. D. / Wickenden, A. E. / Henry, R. L. / Twigg, M. E. / Materials Research Society et al. | 1999
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A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device ApplicationsJohnson, M. A. L. / Yu, Z. / Brown, J. D. / Koeck, F. A. / Materials Research Society et al. | 1999
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Modeling of a GaN Based Static Induction TransistorBunea, G. E. / Dunham, S. T. / Moustakas, T. D. / Materials Research Society et al. | 1999
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Niln as an Ohmic Contact to P-GaNIngerly, D. B. / Chang, Y. A. / Chen, Y. / Materials Research Society et al. | 1999
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Phonon Dynamics and Lifetimes of AlN and GaN CrytallitesBergman, L. / Alexson, D. / Nemanich, R. J. / Dutta, M. / Materials Research Society et al. | 1999
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Characterization of Be-Implanted GaN Annealed at High TemperaturesRonning, C. / Linthicum, K. J. / Carlson, E. P. / Hartlieb, P. J. / Materials Research Society et al. | 1999
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Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium SourceZhang, L. / Zhang, R. / Boleslawski, M. P. / Kuech, T. F. / Materials Research Society et al. | 1999
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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire SubstratesYu, Z. / Johnson, M. A. L. / Brown, J. D. / El-Masry, N. A. / Materials Research Society et al. | 1999
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Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion IrradiationGoodman, S. A. / Auret, F. D. / Koschnick, F. K. / Spaeth, J.-M. / Materials Research Society et al. | 1999
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Temperature Dependence of Bound Exciton Emissions in GaNChtchekine, D. G. / Gilliland, G. D. / Feng, Z. C. / Chua, S. J. / Materials Research Society et al. | 1999
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Inductively Coupled Plasma Etching of III-Nitrides in Cl~2/Xe, Cl~2/Ar and Cl~2/HeCho, H. / Hahn, Y. B. / Hays, D. C. / Jung, K. B. / Materials Research Society et al. | 1999
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Spectroscopic Studies in InGaN Quantum WellsChichibu, S. F. / Sota, T. / Wada, K. / DenBaars, S. P. / Materials Research Society et al. | 1999
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GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time EllipsometryLosurdo, M. / Capezzuto, P. / Bruno, G. / Materials Research Society et al. | 1999
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Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-EpitaxyThomson, D. B. / Gehrke, T. / Linthicum, K. J. / Rajagopal, P. / Materials Research Society et al. | 1999
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Comparative Growth of AlN on Singular and Off-Axis 6H and 4H-SiC by MOCVDWilson, S. / Dickens, C. S. / Griffin, J. / Spencer, M. G. / Materials Research Society et al. | 1999
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Characteristic Temperature Estimation of GaN-Based LasersHonda, T. / Kawanishi, H. / Sakaguchi, T. / Koyama, F. / Materials Research Society et al. | 1999
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GaN NanotubesLee, S. M. / Lee, Y. H. / Hwang, Y. G. / Elsner, J. / Materials Research Society et al. | 1999
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Electrical Characterization of Sputter Deposition Induced Defects in n-GaNAuret, F. D. / Goodman, S. A. / Koschnick, F. K. / Spaeth, J.-M. / Materials Research Society et al. | 1999
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XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN SurfacesBeach, R. A. / Piquette, E. C. / McGill, T. C. / Materials Research Society et al. | 1999
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RBS Lattice Site Location and Damage Recovery Studies in GaNAlves, E. / DaSilva, M. F. / Soares, J. C. / Bartels, J. / Materials Research Society et al. | 1999
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Cubic InGaN Grown by MOCVDLi, J. B. / Yang, H. / Zheng, L. X. / Xu, D. P. / Materials Research Society et al. | 1999
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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural PropertiesGrandjean, N. / Massies, J. / Leroux, M. / Lauegt, M. / Materials Research Society et al. | 1999
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Piezoelectric Level Splitting in GalnN/GaN Quantum WellsWetzel, C. / Takeuchi, T. / Amano, H. / Akasaki, I. / Materials Research Society et al. | 1999
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Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium NitrideReuter, E. E. / Zhang, R. / Kuech, T. F. / Bishop, S. G. / Materials Research Society et al. | 1999
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GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of GalliumBartram, M. E. / Creighton, J. R. / Materials Research Society et al. | 1999
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Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBEPiquette, E. C. / Bridger, P. M. / Beach, R. A. / McGill, T. C. / Materials Research Society et al. | 1999
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Optical Properties of Si-Doped Al~xGa~1~-~xN/Al~yGa~1~-~yN (x = 0.24-0.53, y = 0.11) Multi-Quantum-Well StructuresHirayama, H. / Aoyagi, Y. / Materials Research Society et al. | 1999
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Characterization of Flicker Noise in GaN Based MODFETs at Low Drain BiasHo, W. Y. / Fong, W. K. / Surya, C. / Tong, K. Y. / Materials Research Society et al. | 1999
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Behavior of W and WSi~x Contact Metallization on n- and p-Type GaNCao, X. A. / Ren, F. / Lothian, J. R. / Pearton, S. J. / Materials Research Society et al. | 1999
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Group-III Nitride Etch Selectivity in BCl~3/Cl~2 ICP PlasmasShul, R. J. / Zhang, L. / Willison, C. G. / Han, J. / Materials Research Society et al. | 1999
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Focused Ion Beam Micromachining of GaN Photonic DevicesChyr, I. / Steckl, A. J. / Materials Research Society et al. | 1999
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Dry and Wet Etching for Group III NitridesAdesida, I. / Youtsey, C. / Ping, A. T. / Khan, F. / Materials Research Society et al. | 1999
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Contact Issues of GaN TechnologyQiao, D. / Yu, L. S. / Lau, S. S. / Sullivan, G. J. / Materials Research Society et al. | 1999
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Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)Tadatomo, K. / Ohuchi, Y. / Okagawa, H. / Itoh, H. / Materials Research Society et al. | 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN FilmsRobins, L. H. / Paul, A. J. / Parker, C. A. / Roberts, J. C. / Materials Research Society et al. | 1999
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Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaNToth, M. / Fleischer, K. / Phillips, M. R. / Materials Research Society et al. | 1999
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Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaNChen, W. M. / Buyanova, I. A. / Wagner, M. / Monemar, B. / Materials Research Society et al. | 1999
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The Behavior of Ion-Implanted Hydrogen in Gallium NitrideMyers, S. M. / Headley, T. J. / Hills, C. R. / Han, J. / Materials Research Society et al. | 1999
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Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral OvergrowthColtrin, M. E. / Willan, C. C. / Bartram, M. E. / Han, J. / Materials Research Society et al. | 1999
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Electronic Structure and Optical Properties of ZnGeN~2Limpijumnong, S. / Rashkeev, S. N. / Lambrecht, W. R. L. / Materials Research Society et al. | 1999
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Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow LuminescenceHsieh, J. T. / Hwang, J. M. / Hwang, H. L. / Hung, W. H. / Materials Research Society et al. | 1999
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Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam EpitaxyHoemmerich, U. / Seo, J. T. / Thaik, M. / MacKenzie, J. D. / Materials Research Society et al. | 1999
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Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor DepositionGherasimova, M. / Gaffey, B. / Mitev, P. / Guido, L. J. / Materials Research Society et al. | 1999
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Microstructure of GaN Grown on (111) Si by MOCVDFollstaedt, D. M. / Han, J. / Provencio, P. / Fleming, J. G. / Materials Research Society et al. | 1999
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Epitaxial Lateral Overgrowth of GaN With Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase EpitaxyZhang, R. / Zhang, L. / Hansen, D. M. / Boleslawski, M. P. / Materials Research Society et al. | 1999
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Homoepitaxial and Heteroepitaxial Gallium Nitride Grown by Molecular Beam EpitaxyFoxon, C. T. / Cheng, T. S. / Korakakis, D. / Novikov, S. V. / Materials Research Society et al. | 1999
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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect TransistorsRuden, P. P. / Albrecht, J. D. / Sutandi, A. / Binari, S. C. / Materials Research Society et al. | 1999
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Doping of AlGaN AlloysVan de Walle, C. G. / Stampfl, C. / Neugebauer, J. / McCluskey, M. D. / Materials Research Society et al. | 1999
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Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam EpitaxyGrandjean, N. / Massies, J. / Leroux, M. / Lauegt, M. / Materials Research Society et al. | 1999
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Optical Gain Spectra in InGaN/GaN Quantum Wells With the Compositional FluctuationsUenoyama, T. / Materials Research Society et al. | 1999
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Nitridation of GaAs (001)-2x4 Surface Studied by Auger Electron SpectroscopyAksenov, I. / Nakada, Y. / Okumura, H. / Materials Research Society et al. | 1999
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Growth of Oriented Thick Films of Gallium Nitride From the MeltDyck, J. S. / Kash, K. / Grossner, M. T. / Hayman, C. C. / Materials Research Society et al. | 1999
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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride StructuresZheleva, T. S. / Smith, S. A. / Thomson, D. B. / Gehrke, T. / Materials Research Society et al. | 1999
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Eptiaxial Growth of III-Nitride Layers on Aluminum Nitride SubstratesSchowalter, L. J. / Shusterman, Y. / Wang, R. / Bhat, I. / Materials Research Society et al. | 1999
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Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing TemperatureFujita, S. / Funato, M. / Park, D.-C. / Ikenaga, Y. / Materials Research Society et al. | 1999
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Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Water MOVPE ReactorChuang, R. W. / Zou, A. Q. / Lee, H. P. / Dong, Z. J. / Materials Research Society et al. | 1999
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Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam EpitaxyMurphy, M. J. / Foutz, B. E. / Chu, K. / Wu, H. / Materials Research Society et al. | 1999
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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam EpitaxyChen, H. / Smith, A. R. / Feenstra, R. M. / Greve, D. W. / Materials Research Society et al. | 1999
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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature InterlayersAmano, H. / Iwaya, M. / Hayashi, N. / Kashima, T. / Materials Research Society et al. | 1999
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Luminescence From Erbium-Doped Gallium Nitride Thin FilmsZavada, J. M. / Thaik, M. / Hoemmerich, U. / MacKenzie, J. D. / Materials Research Society et al. | 1999
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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)Hiroyama, Y. / Tamura, M. / Materials Research Society et al. | 1999
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Thermal Residual Stress Modeling in AlN and GaN Multilayer SamplesWang, K. / Reeber, R. R. / Materials Research Society et al. | 1999
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Properties of Epitaxial ZnO Thin Films for GaN and Related ApplicationsShen, H. / Wraback, M. / Pamulapati, J. / Liang, S. / Materials Research Society et al. | 1999
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Growth and Characterization of B~xGa~1~-~xN on 6H-SiC (0001) by MOVPEWei, C. H. / Xie, Z. Y. / Edgar, J. H. / Zeng, K. C. / Materials Research Society et al. | 1999
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Interface Effects on the Persistent Photoconductivity in Thin GaN and AlGaN FilmsSeifert, O. P. / Kirfel, O. / Munzel, M. / Hirsch, M. T. / Materials Research Society et al. | 1999
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Theoretical Studies of ZnO and Related Mg~xZn~1~-~xO Alloy BandstructuresLambrecht, W. R. L. / Limpijumnong, S. / Segall, B. / Materials Research Society et al. | 1999
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Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane SapphireSumiya, M. / Ohnishi, T. / Tanaka, M. / Ohtomo, A. / Materials Research Society et al. | 1999
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Thermal Annealing of InGaN/GaN Strained-Layer Quantum WellChan, M. C. Y. / Tsang, K.-O. / Li, E. H. / DenBaars, S. P. / Materials Research Society et al. | 1999
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Photoelectrochemical Etching of In~xGa~1~-~xNCho, H. / Donovan, S. M. / Abernathy, C. R. / Pearton, S. J. / Materials Research Society et al. | 1999
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Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum WellsSchmidt, T. J. / Bidnyk, S. / Cho, Y.-H. / Fischer, A. J. / Materials Research Society et al. | 1999
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Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase EpitaxyKim, S. / Li, X. / Coleman, J. J. / Zhang, R. / Materials Research Society et al. | 1999
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Ion Channeling Analysis of Gallium Nitride Implanted With DeuteriumWampler, W. R. / Myers, S. M. / Materials Research Society et al. | 1999
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Optical and Structural Properties of Er^3^+-Doped GaN Grown by MBEBirkhahn, R. H. / Hudgins, R. / Lee, D. S. / Lee, B. K. / Materials Research Society et al. | 1999
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TEM Study of Defects in Laterally Overgrown GaN LayersLiliental-Weber, Z. / Benamara, M. / Swider, W. / Washburn, J. / Materials Research Society et al. | 1999
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Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaNGarter, M. / Birkhahn, R. / Steckl, A. J. / Scofield, J. / Materials Research Society et al. | 1999