Vacancies and Their Complexes with H in SiC (English)
- New search for: Deak, P.
- New search for: Gali, A.
- New search for: Aradi, B.
- New search for: Son, N. T.
- New search for: Janzen, E.
- New search for: Choyke, W. J.
- New search for: Deak, P.
- New search for: Gali, A.
- New search for: Aradi, B.
- New search for: Son, N. T.
- New search for: Janzen, E.
- New search for: Choyke, W. J.
- New search for: Carter, C. H.
- New search for: Devaty, R. P.
- New search for: Rohrer, G. S.
In:
International conference on silicon carbide and related materials
;
817-820
;
2000
-
ISBN:
-
ISSN:
- Conference paper / Print
-
Title:Vacancies and Their Complexes with H in SiC
-
Contributors:Deak, P. ( author ) / Gali, A. ( author ) / Aradi, B. ( author ) / Son, N. T. ( author ) / Janzen, E. ( author ) / Choyke, W. J. ( author ) / Carter, C. H. / Devaty, R. P. / Rohrer, G. S.
-
Conference:International conference on silicon carbide and related materials ; 1999 ; Research Triangle Park, NC
-
Published in:MATERIALS SCIENCE FORUM ; 338-342 ; 817-820
-
Publisher:
- New search for: Trans Tech Publications
-
Publication date:2000-01-01
-
Size:4 pages
-
Remarks:Also known as ICSCRM'99
-
ISBN:
-
ISSN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Status of Large Diameter SiC Crystal Growth for Electronic and Optical ApplicationsHobgood, D. / Brady, M. / Brixius, W. / Fechko, G. / Glass, R. / Henshall, D. / Jenny, J. / Leonard, R. / Malta, D. / Muller, S. G. et al. | 2000
- 9
-
Large Diameter PVT Growth of Bulk 6H SiC CrystalsSnyder, D. W. / Heydemann, V. D. / Everson, W. J. / Barrett, D. L. et al. | 2000
- 13
-
Progress in SiC Bulk GrowthAnikin, M. / Chaix, O. / Pernot, E. / Pelissier, B. / Pons, M. / Pisch, A. / Bernard, C. / Grosse, P. / Faure, C. / Grange, Y. et al. | 2000
- 17
-
Generation and Properties of Semi-Insulating SiC SubstratesWang, S. / Powell, A. / Redwing, J. / Piner, E. / Saxler, A. W. et al. | 2000
- 21
-
Vanadium-free Semi-insulating 4H-SiC SubstratesMitchel, W. C. / Saxler, A. / Perrin, R. / Goldstein, J. / Smith, S. R. / Evwaraye, A. O. / Solomon, J. S. / Brady, M. / Tsvetkov, V. / Carter, C. H. et al. | 2000
- 25
-
Numerical Simulation of SiC Boule Growth by SublimationMadar, R. / Pons, M. / Dedulle, J.-M. / Blanquet, E. / Pisch, A. / Grosse, P. / Faure, C. / Anikin, M. / Bernard, C. et al. | 2000
- 31
-
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT GrowthSelder, M. / Kadinski, L. / Durst, F. / Straubinger, T. L. / Hofmann, D. / Wellmann, P. J. et al. | 2000
- 35
-
An Analytical Study of the SiC Growth Process from Vapor PhaseCherednichenko, D. I. / Khlebnikov, Y. I. / Khlebnikov, I. I. / Soloviev, S. I. / Sudarshan, T. S. et al. | 2000
- 39
-
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process ConditionsStraubinger, T. L. / Bickermann, M. / Grau, M. / Hofmann, D. / Kadinski, L. / Muller, S. G. / Selder, M. / Wellmann, P. J. / Winnacker, A. et al. | 2000
- 43
-
Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk GrowthMuller, S. G. / Fricke, J. / Hofmann, D. / Horn, R. / Nilsson, O. / Rexer, B. et al. | 2000
- 47
-
Seed Surface Preparation for SiC Sublimation GrowthPelissier, B. / Moulin, C. / Pernot, E. / Anikin, M. / Grosse, P. / Faure, C. / Ferrand, B. / Couchaud, M. / Basset, G. / Madar, R. et al. | 2000
- 51
-
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation MethodOkada, S. / Nishiguchi, T. / Shimizu, T. / Sasaki, M. / Oshima, S. / Nishino, S. et al. | 2000
- 55
-
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiCSanchez, E. K. / Heydemann, V. D. / Snyder, D. W. / Rohrer, G. S. / Skowronski, M. et al. | 2000
- 59
-
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with MicropipesKhlebnikov, I. I. / Cherednichenko, D. I. / Khlebnikov, Y. / Sudarshan, T. S. et al. | 2000
- 63
-
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon CarbideSanchez, E. K. / Heydemann, V. D. / Snyder, D. W. / Rohrer, G. S. / Skowronski, M. et al. | 2000
- 67
-
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVTHa, S. / Rohrer, G. S. / Skowronski, M. / Heydemann, V. D. / Snyder, D. W. et al. | 2000
- 71
-
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source DegradationWellmann, P. J. / Bickermann, M. / Hofmann, D. / Kadinski, L. / Selder, M. / Straubinger, T. L. / Winnacker, A. et al. | 2000
- 75
-
SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray TechniqueOyanagi, N. / Nishizawa, S. / Kato, T. / Yamaguchi, H. / Arai, K. et al. | 2000
- 79
-
Role of Temperature Gradient in Bulk Crystal Growth of SiCBalkas, C. M. / Maltsev, A. A. / Roth, M. D. / Yushin, N. K. et al. | 2000
- 83
-
Pressure Effect in Sublimation Growth of Bulk SiCKitou, Y. / Bahng, W. / Nishizawa, S. / Nishino, S. / Arai, K. et al. | 2000
- 87
-
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVTSchulz, D. / Irmscher, K. / Dolle, J. / Eiserbeck, W. / Muller, T. / Rost, H.-J. / Siche, D. / Wagner, G. / Wollweber, J. et al. | 2000
- 91
-
Evaporation Behavior of SiC Powder for Single Crystal Growth - An Experimental Study on Thermodynamics and KineticsPisch, A. / Ferraria, A. M. / Chatillon, C. / Blanquet, E. / Pons, M. / Bernard, C. / Anikin, M. / Madar, R. et al. | 2000
- 95
-
Considerations on the Crystal Morphology in the Sublimation Growth of SiCRaback, P. / Yakimova, R. / Syvajarvi, M. / Iakimov, T. / Nieminen, R. / Janzen, E. et al. | 2000
- 99
-
Shape of SiC Bulk Single Crystal Grown by SublimationNishizawa, S. / Kitou, Y. / Bahng, W. / Oyanagi, N. / Khan, M. N. / Arai, K. et al. | 2000
- 103
-
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite LidBahng, W. / Kitou, Y. / Nishizawa, S. / Yamaguchi, H. / Khan, M. N. / Oyanagi, N. / Arai, K. / Nishino, S. et al. | 2000
- 107
-
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth RegimesEpelbaum, B. M. / Hofmann, D. / Muller, M. / Winnacker, A. et al. | 2000
- 111
-
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely MethodSchulze, N. / Barrett, D. / Weidner, M. / Pensl, G. et al. | 2000
- 115
-
Crystal Growth of 15R-SiC Boules by Sublimation MethodNishiguchi, T. / Okada, S. / Sasaki, M. / Harima, H. / Nishino, S. et al. | 2000
- 119
-
Growth of 3C SiC Single Crystals from Convection Dominated MeltsWollweber, J. / Chevrier, V. / Siche, D. / Duffar, T. et al. | 2000
- 125
-
An Overview of SiC GrowthMatsunami, H. et al. | 2000
- 131
-
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth DevelopmentsEllison, A. / Zhang, J. / Magnusson, W. / Henry, A. / Wahab, Q. / Bergman, J. P. / Hemmingsson, C. / Son, N. T. / Janzen, E. et al. | 2000
- 137
-
Morphology Control for Growth of Thick Epitaxial 4H SiC LayersZhang, J. / Ellison, A. / Janzen, E. et al. | 2000
- 141
-
Vertical Hot-Wall Type CVD for SiC GrowthTakahashi, K. / Uchida, M. / Kitabatake, M. / Uenoyama, T. et al. | 2000
- 145
-
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial LayersTsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2000
- 149
-
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall ReactorJi, W. / Lofgren, P. M. / Hallin, C. / Gu, C.-Y. et al. | 2000
- 153
-
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by InductionLofgren, P. M. / Hallin, C. / Gu, C.-Y. / Ji, W. et al. | 2000
- 157
-
The Development of Resistive Heating for the High Temperature Growth of alpha-SiC using a Vertical CVD ReactorEshun, E. / Taylor, C. / Diagne, N. F. / Griffin, J. / Spencer, M. G. / Ferguson, I. / Gurary, A. / Stall, R. et al. | 2000
- 161
-
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase EpitaxyRowland, L. B. / Dunne, G. T. / Freitas, J. A. et al. | 2000
- 165
-
High Growth Rate Epitaxy of Thick 4H-SiC LayersSyvajarvi, M. / Yakimova, R. / Jacobsson, H. / Linnarsson, M. K. / Henry, A. / Janzen, E. et al. | 2000
- 169
-
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall ReactorKushibe, M. / Ishida, Y. / Okumura, H. / Takahashi, T. / Masahara, K. / Ohno, T. / Suzuki, T. / Tanaka, T. / Yoshida, S. / Arai, K. et al. | 2000
- 173
-
Multi-Wafer VPE Growth and Characterization of SiC Epitaxial LayersNordby, H. D. / O Loughlin, M. J. / MacMillan, M. F. / Burk, A. A. / Oliver, J. D. et al. | 2000
- 177
-
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-DisilabutaneLee, S. Y. / Lee, K.-W. / Kim, Y. et al. | 2000
- 181
-
Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon CarbideJamison, K. D. / Kempel, M. L. / Woodin, R. L. / Shovlin, J. D. / Beck, D. / Li, Q. / Kordesch, M. E. et al. | 2000
- 185
-
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial GrowthLandini, B. E. / Brandes, G. R. et al. | 2000
- 189
-
4H-SiC (11&unknown;20) Epitaxial GrowthKimoto, T. / Yamamoto, T. / Chen, Z. Y. / Yano, H. / Matsunami, H. et al. | 2000
- 193
-
Homoepitaxial Growth of 6H SiC on Single Crystalline SpheresChristiansen, K. / Christiansen, S. / Strunk, H. P. / Helbig, R. et al. | 2000
- 197
-
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor DepositionNishino, S. / Nishio, Y. / Masuda, Y. / Chen, Y. / Jacob, C. et al. | 2000
- 201
-
Growth of SiC on 6H-SiC {01&unknown;14} Substrates by Gas Source Molecular Beam EpitaxyNakamura, S. / Hatayama, T. / Kimoto, T. / Fuyuki, T. / Matsunami, H. et al. | 2000
- 205
-
Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiCFissel, A. / Kaiser, U. / Schroter, B. / Krausslich, J. / Hobert, H. / Richter, W. et al. | 2000
- 209
-
Thermodynamical Consideration of the Epitaxial Growth of SiC PolytypesFissel, A. et al. | 2000
- 213
-
Mechanisms of SiC(111) Step Flow GrowthStout, P. J. et al. | 2000
- 217
-
Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation EpitaxyFurusho, T. / Matsumoto, K. / Harima, H. / Nishino, S. et al. | 2000
- 221
-
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation EpitaxyDavydov, D. V. / Lebedev, A. A. / Tregubova, A. S. / Kozlovski, V. V. / Kuznetsov, A. N. / Bogdanova, E. V. et al. | 2000
- 225
-
Growth of SiC and GaN on Porous Buffer LayersMynbaeva, M. / Savkina, N. S. / Tregubova, A. S. / Scheglov, M. P. / Lebedev, A. A. / Zubrilov, A. / Titkov, A. / Kryganovski, A. / Mynbaev, K. / Seredova, N. et al. | 2000
- 229
-
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis SubstratesKuznetsov, N. / Morozov, A. / Baumann, D. / Ivantsov, V. / Sukhoveev, V. / Nikitina, I. / Zubrilov, A. / Rendakova, S. / Dmitriev, V. / Hofman, D. et al. | 2000
- 233
-
Temperature Gradient Effect on SiC Epitaxy in Liquid PhaseKhan, M. N. / Nishizawa, S. / Bahng, W. / Arai, K. et al. | 2000
- 237
-
Micropipe Healing in Liquid Phase Epitaxial Growth of SiCYakimova, R. / Syvajarvi, M. / Rendakova, S. / Dmitriev, V. / Henry, A. / Janzen, E. et al. | 2000
- 241
-
Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed ReactorLeycuras, A. et al. | 2000
- 245
-
Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si SubstratesSaddow, S. E. / Carter, G. / Geil, B. / Zheleva, T. / Melnychuck, G. / Okhuysen, M. E. / Mazzola, M. S. / Vispute, R. D. / Derenge, M. / Ervin, M. et al. | 2000
- 249
-
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and PropaneJacob, C. / Hong, M.-H. / Chung, J. / Pirouz, P. / Nishino, S. et al. | 2000
- 253
-
The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) SubstrateIshida, Y. / Takahashi, T. / Okumura, H. / Sekigawa, T. / Yoshida, S. et al. | 2000
- 257
-
Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl Using Atmospheric CVDChen, Y. / Masuda, Y. / Jacob, C. / Shirafuji, T. / Nishino, S. et al. | 2000
- 261
-
Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiCShimizu, H. / Ohba, T. et al. | 2000
- 265
-
Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free JetsIkoma, Y. / Endo, T. / Tada, T. / Watanabe, F. / Motooka, T. et al. | 2000
- 269
-
Formation of High Quality SiC on Si(100) at 900^oC using Monomethylsilane Gas-Source MBENakazawa, H. / Suemitsu, M. / Asami, S. et al. | 2000
- 273
-
Growth and Characterization of N-Doped SiC Films from TrimethylsilaneChen, J. / Steckl, A. J. / Loboda, M. J. et al. | 2000
- 277
-
The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si SubstratesSarney, W. L. / Salamanca-Riba, L. / Zhou, P. / Taylor, C. / Spencer, M. G. / Vispute, R. D. / Jones, K. A. et al. | 2000
- 281
-
In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si SurfacesWohner, T. / Stauden, T. / Schaefer, J. A. / Pezoldt, J. et al. | 2000
- 285
-
Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)SiCimalla, V. / Attenberger, W. / Lindner, J. K. N. / Stritzker, B. / Pezoldt, J. et al. | 2000
- 289
-
The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)SiPezoldt, J. / Masri, P. / Laridjani, M. R. / Averous, M. / Wohner, T. / Schaefer, J. A. / Stauden, T. / Ecke, G. / Pieterwas, R. / Spiess, L. et al. | 2000
- 293
-
Studies of the Initial Stages of Silicon Carbide Growth Using Molecular Hydrocarbon and Methyl Radical Gas SpeciesGold, J. S. / Lannon, J. S. / Tolani, V. L. / Ziemer, K. S. / Stinespring, C. D. et al. | 2000
- 297
-
Carbonization of SIMOX Substrates for Fabrication of Single-Crystal SiC-on-InsulatorHarada, S. / Arita, M. / Ikoma, Y. / Motooka, T. et al. | 2000
- 301
-
SOL Thinning Effects on 3C-SiC on SOIPlanes, N. / Moller, H. / Camassel, J. / Stoemenos, Y. / Falkovski, L. / Eickhoff, M. / Krotz, G. et al. | 2000
- 305
-
Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate DevelopmentOkhuysen, M. E. / Mazzola, M. S. / Lo, Y.-H. et al. | 2000
- 309
-
Epitaxial Growth of beta-SiC on Ion-Beam Synthesized beta-SiC: Structural CharacterizationRomano-Rodriguez, A. / Perez-Rodriguez, A. / Serre, C. / Morante, J. R. / Esteve, J. / Acero, M. C. / Kogler, R. / Skorupa, W. / Ostling, M. / Nordell, N. et al. | 2000
- 313
-
Growth of Single Crystalline 3C-SiC and AlN on Si using Porous Si as a Compliant Seed CrystalPurser, D. / Jenkins, M. / Lieu, D. / Vaccaro, F. / Faik, A. / Hasan, M.-A. / Leamy, H. J. / Carlin, C. / Sardela, M. R. / Zhao, Q. et al. | 2000
- 317
-
The Growth and Characterization of 3C-SiC/SiN~x/Si StructureKim, K. C. / Park, C. I. / Nahm, K. S. / Suh, E.-K. et al. | 2000
- 321
-
The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown LayersCimalla, V. / Wohner, T. / Pezoldt, J. et al. | 2000
- 325
-
Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on SiWang, Y. / Lin, J. / Feng, Z. C. / Chua, S. J. / Alfred, C. H. H. et al. | 2000
- 329
-
Thin Films of a-Si~1~-~xC~x:H Deposited by PECVD: The R.F. Power and H~2 Dilution RolePrado, R. J. / Fantini, M. C. A. / Tabacniks, M. H. / Pereyra, I. / Flank, A. M. et al. | 2000
- 335
-
Surface Composition of 4H-SiC as a Function of TemperatureBryant, K. W. / Bozack, M. J. et al. | 2000
- 341
-
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure GrowthStarke, U. / Bernhardt, J. / Schardt, J. / Seubert, A. / Heinz, K. et al. | 2000
- 345
-
Atomic Structure of 6H-SiC(000&unknown;1)-(2x2)~cBernhardt, J. / Seubert, A. / Nerding, M. / Starke, U. / Heinz, K. et al. | 2000
- 349
-
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3x√3)R30^o ReconstructionLu, W. / Kruger, P. / Pollmann, J. et al. | 2000
- 353
-
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)Hartman, J. D. / Naniwae, K. / Petrich, C. / Ramachandran, V. / Feenstra, R. M. / Nemanich, R. J. / Davis, R. F. et al. | 2000
- 357
-
High Resolution Electron Energy Loss Spectroscopy of √3x√3 6H-SiC(0001)Takahashi, K. / Uchida, M. / Kitabatake, M. et al. | 2000
- 361
-
In-Situ RHEED Analysis During alpha-SiC Homoepitaxy on (0001)Si- and (000&unknown;1)C-Faces by Gas Source Molecular Beam EpitaxyHatayama, T. / Fuyuki, T. / Nakamura, S. / Kurobe, K. / Kimoto, T. / Matsunami, H. et al. | 2000
- 365
-
(10&unknown;10)- and (11&unknown;20)-Surfaces in 2H-, 4H- and 6H-SiCRauls, E. / Hajnal, Z. / Deak, P. / Frauenheim, T. et al. | 2000
- 369
-
Theory of Structural and Electronic Properties of Cubic SiC SurfacesPollmann, J. / Kruger, P. / Lu, W. et al. | 2000
- 375
-
Characterization of Anisotropic Step-Bunching on As-Grown SiC SurfacesSyvajarvi, M. / Yakimova, R. / Iakimov, T. / Janzen, E. et al. | 2000
- 379
-
Observation of Macrostep Formation on the (0001) Facet of Bulk SiC CrystalsOhtani, N. / Katsuno, M. / Aigo, T. / Yashiro, H. / Kanaya, M. et al. | 2000
- 383
-
Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiCBernhardt, J. / Schardt, J. / Starke, U. / Heinz, K. et al. | 2000
- 387
-
Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiCHollering, M. / Sieber, N. / Maier, F. / Ristein, J. / Ley, L. / Riley, J. D. / Leckey, R. C. G. / Leisenberger, F. / Netzer, F. et al. | 2000
- 391
-
Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001)Sieber, N. / Hollering, M. / Ristein, J. / Ley, L. et al. | 2000
- 395
-
Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 SurfaceAmy, F. / Hwu, Y.-K. / Brylinski, C. / Soukiassian, P. et al. | 2000
- 399
-
XPS Analysis of SiO~2/SiC Interface Annealed in Nitric Oxide AmbientLi, H.-F. / Dimitrijev, S. / Sweatman, D. / Harrison, H. B. et al. | 2000
- 403
-
Surface Studies on Thermal Oxidation on 4H-SiC EpilayerKoh, A. / Kestle, A. / Wilks, S. P. / Dunstan, P. R. / Wright, C. J. / Pritchard, M. / Pope, G. / Mawby, P. A. / Bowen, W. R. et al. | 2000
- 407
-
Quantified Conditions for Reduction of ESO Contamination During SiC MetalizationMcDaniel, G. Y. / Fenstermaker, S. T. / Walker, D. E. / Lampert, W. V. / Mukhopadhyay, S. M. / Holloway, P. H. et al. | 2000
- 411
-
Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface CharacterizationDefives, D. / Durand, O. / Wyczisk, F. / Olivier, J. / Noblanc, O. / Brylinski, C. et al. | 2000
- 415
-
A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated TemperaturesLu, W. J. / Shi, D. T. / Crenshaw, T. R. / Burger, A. / Collins, W. E. et al. | 2000
- 419
-
Study of a Clean Surface of alpha - SiC and its Metallization Process by Cu, Au and Ni Using STM and Electron/Photon SpectroscopiesIwami, M. / Hirai, M. / Kusaka, M. / Mihara, I. / Saito, T. / Yamaguchi, M. / Morii, T. / Watanabe, M. et al. | 2000
- 423
-
Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiCBryant, K. W. / Bozack, M. J. et al. | 2000
- 427
-
Group-III Adsorption and Bond Stacking on SiC(111) SurfacesGrossner, U. / Furthmuller, J. / Bechstedt, F. et al. | 2000
- 431
-
Characterization of SiC Using Synchrotron White Beam X-Ray TopographyDudley, M. / Huang, X. et al. | 2000
- 437
-
Growth of Low Micropipe Density SiC WafersPowell, A. / Wang, S. / Brandes, G. et al. | 2000
- 441
-
Investigation of the Origin of Micropipe DefectOkamoto, A. / Sugiyama, N. / Tani, T. / Kamiya, N. et al. | 2000
- 445
-
Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk CrystalsHofmann, D. / Bickermann, M. / Hartung, W. / Winnacker, A. et al. | 2000
- 449
-
Origin of the Internal Stress Around the Micropipe of 6H-SiC Single CrystalKato, T. / Ohsato, H. / Okuda, T. et al. | 2000
- 453
-
Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of MicropipesShamsuzzoha, M. / Saddow, S. E. / Schattner, T. E. / Lin, L. / Dudley, M. / Rendakova, S. V. / Dmitriev, V. A. et al. | 2000
- 457
-
In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray TopographyKato, T. / Oyanagi, N. / Yamaguchi, H. / Takano, Y. / Nishizawa, S. / Arai, K. et al. | 2000
- 461
-
X-Ray Topographic Study of SiC Crystal at High TemperatureYamaguchi, H. / Oyanagi, N. / Kato, T. / Takano, Y. / Nishizawa, S. / Bahng, W. / Yoshida, S. / Arai, K. et al. | 2000
- 465
-
Synchrotron White Beam Topography Studies of 2H SiC CrystalsDudley, M. / Huang, W. / Vetter, W. M. / Neudeck, P. / Powell, J. A. et al. | 2000
- 469
-
Synchrotron White Beam X-Ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely PlateletVetter, W. M. / Dudley, M. / Huang, W. / Neudeck, P. / Powell, J. A. et al. | 2000
- 473
-
X-Ray Characterization of 3 Inch Diameter 4H and 6H-SiC Experimental WafersKuhr, T. A. / Vetter, W. M. / Dudley, M. / Skowronski, M. et al. | 2000
- 477
-
Origin of Threading Dislocation Arrays in SiC Boules Grown by PVTHa, S. / Nuhfer, N. T. / De Graef, M. / Rohrer, G. S. / Skowronski, M. et al. | 2000
- 481
-
Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical EtchingHenkel, T. / Ferro, G. / Nishizawa, S. / Pressler, H. / Tanaka, Y. / Tanoue, H. / Kobayashi, N. et al. | 2000
- 485
-
Polytype and Defect Control of Two Inch Diameter Bulk SiCSasaki, M. / Shiomi, H. / Harima, H. / Nishino, S. et al. | 2000
- 489
-
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky DiodesSchnabel, C. M. / Tabib-Azar, M. / Neudeck, P. G. / Bailey, S. G. / Su, H. B. / Dudley, M. / Raffaelle, R. P. et al. | 2000
- 493
-
Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-Ray DiffractometryKatsuno, M. / Ohtani, N. / Aigo, T. / Yashiro, H. / Kanaya, M. et al. | 2000
- 497
-
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiCKalinina, E. V. / Zubrilov, A. S. / Kuznetsov, N. I. / Nikitina, I. P. / Tregubova, A. S. / Shcheglov, M. P. / Bratus, V. Y. et al. | 2000
- 501
-
High Order X-Ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC MaterialsXu, G. / Feng, Z. C. et al. | 2000
- 505
-
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe DensityKalinina, E. V. / Zubrilov, A. / Solov ev, V. / Kuznetsov, N. / Hallen, A. / Konstantinov, A. / Karlsson, S. / Rendakova, S. / Dmitriev, V. et al. | 2000
- 509
-
Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum SublimationSavkina, N. S. / Lebedev, A. A. / Tregubova, A. S. / Scheglov, M. P. et al. | 2000
- 513
-
Stacking Fault Energy of 6H-SiC and 4H-SiC Single CrystalsHong, M.-H. / Samant, A. V. / Pirouz, P. et al. | 2000
- 517
-
Deformation Tests on 4H-SiC Single Crystals between 900^oC and 1360^oC and the Microstructure of the Deformed SamplesDemenet, J. L. / Hong, M.-H. / Pirouz, P. et al. | 2000
- 521
-
Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si InterfaceJinschek, J. / Kaiser, U. / Richter, W. et al. | 2000
- 525
-
Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOXHong, M.-H. / Chung, J. / Namavar, F. / Pirouz, P. et al. | 2000
- 529
-
Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si~3N~4/SiO~2 SystemZappe, S. / Moller, H. / Krotz, G. / Eickhoff, M. / Skorupa, W. / Obermeier, E. / Stoemenos, J. et al. | 2000
- 533
-
Illusion of New PolytypesKaiser, U. / Chuvilin, A. / Richter, W. et al. | 2000
- 537
-
Microstructural, Optical and Electronic Investigation of Anodized 4H-SiCZangooie, S. / Persson, P. O. A. / Hilfiker, J. N. / Hultman, L. / Arwin, H. / Wahab, Q. et al. | 2000
- 541
-
Characterization of Polycrystalline SiC Grown on SiO~2 and Si~3N~4 by APCVD for MEMS ApplicationsWu, C.-H. / Zorman, C. A. / Mehregany, M. et al. | 2000
- 545
-
Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, How SiC Got Its ColorsLambrecht, W. R. L. / Limpijumnong, S. / Rashkeev, S. / Segall, B. et al. | 2000
- 551
-
Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiCSridhara, S. G. / Bai, S. / Shigiltchoff, O. / Devaty, R. P. / Choyke, W. J. et al. | 2000
- 555
-
Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level PhotoinjectionGrivickas, V. / Galeckas, A. / Grivickas, P. / Linnros, J. et al. | 2000
- 559
-
Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance InvestigationsMeyer, B. K. / Hofmann, D. M. / Volm, D. / Chen, W. M. / Son, N. T. / Janzen, E. et al. | 2000
- 563
-
Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron ResonanceSon, N. T. / Hai, P. N. / Chen, W. M. / Hallin, C. / Monemar, B. / Janzen, E. et al. | 2000
- 567
-
Differential Absorption Measurement of Valence Band Splittings in 4H SiCSridhara, S. G. / Bai, S. / Shigiltchoff, O. / Devaty, R. P. / Choyke, W. J. et al. | 2000
- 571
-
Anisotropic Dielectric Function Properties of Semi-Insulating 4H-SiC Determined from Spectroscopic EllipsometryKildemo, M. / Mooney, M. B. / Kelly, P. V. / Sudre, C. / Crean, G. M. et al. | 2000
- 575
-
Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic EllipsometryLindquist, O. P. A. / Arwin, H. / Forsberg, U. / Bergman, J. P. / Jarrendahl, K. et al. | 2000
- 579
-
Isotope Effects on the Raman Spectrum of SiCRohmfeld, S. / Hundhausen, M. / Ley, L. / Schulze, N. / Pensl, G. et al. | 2000
- 583
-
Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiCPusche, R. / Rohmfeld, S. / Hundhausen, M. / Ley, L. et al. | 2000
- 587
-
Selectively Resonant Raman Spectra of Folded Phonon Modes in SiCTomita, T. / Saito, S. / Baba, M. / Hundhausen, M. / Suemoto, T. / Nakashima, S. et al. | 2000
- 591
-
Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-Resonant ConditionNakashima, S. / Harima, H. / Tomita, T. / Suemoto, T. et al. | 2000
- 595
-
Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on SiRohmfeld, S. / Hundhausen, M. / Ley, L. / Zorman, C. A. / Mehregany, M. et al. | 2000
- 599
-
Characterization of 3C-SiC/SOI Deposited with HMDSPlanes, N. / Aboughe-Nze, P. / Ravetz, M. / Contreras, S. / Vicente, P. / Chassagne, T. / Fraisse, B. / Camassel, J. / Monteil, Y. / Rushworth, S. et al. | 2000
- 603
-
Raman Imaging Characterization of Electric Properties of SiC Near a MicropipeHarima, H. / Hosoda, T. / Nakashima, S. et al. | 2000
- 607
-
Carrier Density Evaluation in P-Type SiC by Raman ScatteringHarima, H. / Hosoda, T. / Nakashima, S. et al. | 2000
- 611
-
Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization SpectroscopyChen, C. Q. / Zeman, J. / Engelbrecht, F. / Peppermuller, C. / Helbig, R. / Martinez, G. et al. | 2000
- 615
-
Characterization of Silicon Carbide using Raman SpectroscopyBurton, J. C. / Long, F. H. / Khlebnikov, Y. / Khlebnikov, I. / Parker, M. / Sudarshan, T. S. et al. | 2000
- 619
-
Photoluminescence Study of CVD Layers Highly Doped with NitrogenForsberg, U. / Henry, A. / Linnarsson, M. K. / Janzen, E. et al. | 2000
- 623
-
Low Temperature Photoluminescence of ^1^3C Enriched SiC-Crystals Grown by the Modified Lely MethodSadowski, H. / Peppermuller, C. / Schulze, N. / Laube, M. / Pensl, G. / Helbig, R. et al. | 2000
- 627
-
Sub-mum Scale Photoluminescence Image of SiC and GaN at a Low TemperatureYoshimoto, M. / Goto, M. / Saraie, J. / Kimoto, T. / Matsunami, H. et al. | 2000
- 631
-
Vanadium-Related Center in 4H Silicon CarbideMagnusson, B. / Wagner, M. / Son, N. T. / Janzen, E. et al. | 2000
- 635
-
Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiCLauer, V. / Bremond, G. / Souifi, A. / Guillot, G. / Chourou, K. / Madar, R. / Clerjaud, B. et al. | 2000
- 639
-
Photoluminescence and DLTS Measurements of 15 MeV Erbium Implanted 6H and 4H SiCShishkin, Y. / Choyke, W. J. / Devaty, R. P. / Achtziger, N. / Opfermann, T. / Witthuhn, W. et al. | 2000
- 643
-
Electronic States of Vacancies in 3C- and 4H-SiCZywietz, A. / Furthmuller, J. / Bechstedt, F. et al. | 2000
- 647
-
Pseudo-Donors in SiCEgilsson, T. / Ivanov, I. G. / Henry, A. / Janzen, E. et al. | 2000
- 651
-
Metastability of a Hydrogen-Related Defect in 6H-SiCHenry, A. / Egilsson, T. / Ivanov, I. G. / Janzen, E. et al. | 2000
- 655
-
Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiCSands, D. / Key, P. H. / Schlaf, M. / Walton, C. D. / Anthony, C. J. / Uren, M. J. et al. | 2000
- 659
-
Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiCFeng, Z. C. / Chua, S. J. / Shen, Z. X. / Tone, K. / Zhao, J. H. et al. | 2000
- 663
-
Confocal Raman Microprobe of Lattice Damage in N^+ Implanted 6H-SiCMestres, N. / Alsina, F. / Campos, F. J. / Pascual, J. / Morvan, E. / Godignon, P. / Millan, J. et al. | 2000
- 667
-
Ion Beam Induced Change in the Linear Optical Properties of SiCWilliams, E. K. / Ila, D. / Poker, D. B. / Hensley, D. K. / Larkin, D. J. et al. | 2000
- 671
-
Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection DependenceGrivickas, P. / Linnros, J. / Grivickas, V. et al. | 2000
- 675
-
Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiCPozina, G. / Bergman, J. P. / Hemmingsson, C. / Janzen, E. et al. | 2000
- 679
-
Optical Lifetime Measurements in 4H SiCShishkin, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2000
- 683
-
Optical Characterization of 4H-SiC p^+n^-n^+ Structures Applying Time-and Spectrally Resolved Emission MicroscopyGaleckas, A. / Linnros, J. / Breitholtz, B. et al. | 2000
- 687
-
Electroluminescence from Implanted and Epitaxially Grown pn-DiodesCarlsson, F. H. C. / Storasta, L. / Hemmingsson, C. / Bergman, J. P. / Janzen, E. et al. | 2000
- 691
-
Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting DiodesAboujja, S. / Carlone, C. / Houdayer, A. / Hinrichsen, P. F. / Charles, J.-P. et al. | 2000
- 695
-
Photon Emission Mechanisms in 6H and 4H-SiC MOSFETsBanc, C. / Bano, E. / Ouisse, T. / Scharnholz, S. / Schmid, U. / Wondrak, W. / Niemann, E. et al. | 2000
- 699
-
Non-Contact Photovoltage Measurements in SiCKoshka, Y. / Mazzola, M. S. et al. | 2000
- 703
-
Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon CarbideCapano, M. A. / Cooper, J. A. / Melloch, M. R. / Saxler, A. / Mitchel, W. C. et al. | 2000
- 707
-
MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiCChafai, M. / Jimenez, J. / Martin, E. / Mitchel, W. C. / Saxler, A. / Perrin, R. et al. | 2000
- 711
-
Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si~2(CH~3)~6Masuda, Y. / Chen, Y. / Matsuura, H. / Harima, H. / Nishino, S. et al. | 2000
- 715
-
Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)Hugonnard-Bruyere, E. / Letertre, F. / Di Cioccio, L. / von Bardeleben, H. J. / Cantin, J. L. / Ouisse, T. / Billon, T. / Guillot, G. et al. | 2000
- 719
-
Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier ConcentrationsLindefelt, U. / Persson, C. et al. | 2000
- 725
-
A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H- and 6H-SiCVelmre, E. / Udal, A. et al. | 2000
- 729
-
Theoretical Calculation of the Electron Hall Mobility in n-Type 4H- and 6H-SiCIwata, H. / Itoh, K. M. et al. | 2000
- 733
-
Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical SimulationRutsch, G. / Devaty, R. P. / Choyke, W. J. / Langer, D. W. / Rowland, L. B. / Niemann, E. / Wischmeyer, F. et al. | 2000
- 737
-
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETsSaks, N. S. / Mani, S. S. / Agarwal, A. K. / Hegde, V. S. et al. | 2000
- 741
-
Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiCGebel, T. / Panknin, D. / Riehn, R. / Parascandola, S. / Skorupa, W. et al. | 2000
- 745
-
Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiCLos, A. V. / Mazzola, M. S. / Saddow, S. E. et al. | 2000
- 749
-
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiCAchtziger, N. / Grillenberger, J. / Uhrmacher, M. / Witthuhn, W. et al. | 2000
- 753
-
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiCFrank, T. / Pensl, G. / Bai, S. / Devaty, R. P. / Choyke, W. J. et al. | 2000
- 757
-
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient SpectroscopyKobayashi, S. / Imai, S. / Hayami, Y. / Kushibe, M. / Shinohe, T. / Okushi, H. et al. | 2000
- 761
-
Improved Measurements of High-Field Drift Velocity in Silicon CarbideKhan, I. A. / Cooper, J. A. et al. | 2000
- 765
-
A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiCNilsson, H.-E. / Bellotti, E. / Brennan, K. F. / Hjelm, M. et al. | 2000
- 769
-
Electron Saturated Vertical Velocities in Silicon Carbide PolytypesSankin, V. I. / Lepneva, A. A. et al. | 2000
- 773
-
High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiCCaetano, E. W. S. / Bezerra, E. F. / Lemos, V. / Freire, V. N. / da Silva, E. F. / da Costa, J. A. P. et al. | 2000
- 777
-
Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide DiodesOsterman, J. / Hallen, A. / Jargelius, M. / Zimmermann, U. / Galeckas, A. / Breitholtz, B. et al. | 2000
- 781
-
Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power DiodesUdal, A. / Velmre, E. et al. | 2000
- 785
-
Donors and Acceptors in SiC - Studies with EPR and ENDORSpaeth, J.-M. et al. | 2000
- 791
-
ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited StatesKalabukhova, E. N. / Lukin, S. N. et al. | 2000
- 795
-
Dopant-Related Complexes in SiCGali, A. / Miro, J. / Deak, P. / Devaty, R. P. / Choyke, W. J. et al. | 2000
- 799
-
The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiCDuijn-Arnold, A. V. / Mol, J. / Verberk, R. / Schmidt, J. / Mokhov, E. N. / Baranov, P. G. et al. | 2000
- 805
-
The Electronic Structure of the Be Acceptor Centers in 6H-SiCDuijn-Arnold, A. v. / Schmidt, J. / Poluektov, O. G. / Baranov, P. G. / Mokhov, E. N. et al. | 2000
- 809
-
Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon CarbideGreulich-Weber, S. / Marz, M. / Spaeth, J.-M. / Mokhov, E. N. / Kalabukhova, E. N. et al. | 2000
- 813
-
ESR Study of Delamination in H^+ Implanted Silicon CarbideChowdhury, E. A. / Seki, T. / Izumi, T. / Tanaka, H. / Hara, T. et al. | 2000
- 817
-
Vacancies and Their Complexes with H in SiCDeak, P. / Gali, A. / Aradi, B. / Son, N. T. / Janzen, E. / Choyke, W. J. et al. | 2000
- 821
-
The Carbon Vacancy Pair in 4H and 6H SiCSon, N. T. / Hai, P. N. / Shuja, A. / Chen, W. M. / Lindstrom, J. L. / Monemar, B. / Janzen, E. et al. | 2000
- 825
-
Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon CarbideKanazawa, S. / Kimura, I. / Okada, M. / Nozaki, T. / Kanno, I. / Ishihara, S. / Watanabe, M. et al. | 2000
- 831
-
Physics of SiC ProcessingPensl, G. / Afanas ev, V. V. / Bassler, M. / Frank, T. / Laube, M. / Weidner, M. et al. | 2000
- 837
-
Polishing and Surface Characterization of SiC SubstratesEverson, W. J. / Snyder, D. W. / Heydemann, V. D. et al. | 2000
- 841
-
Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon BackscatteringMitchel, W. C. / Brown, J. / Buckanan, D. / Bertke, R. / Malalingham, K. / Orazio, F. D. / Pirouz, P. / Tseng, H.-J. R. / Ramabadran, U. B. / Roughani, B. et al. | 2000
- 845
-
Damage-Free Surface Modification of Hexagonal Silicon Carbide WafersChandler, T. C. / Lari, M. B. / Sudarshan, T. S. et al. | 2000
- 849
-
Nuclear Transmutation Doping of Phosphorus into 6H-SiCTamura, S. / Kimoto, T. / Matsunami, H. / Okada, M. / Kanazawa, S. / Kimura, I. et al. | 2000
- 853
-
Radiation Defects and Doping of SiC with Phosphorus by Nuclear Transmutation Doping (NTD)Heissenstein, H. / Sadowski, H. / Peppermuller, C. / Helbig, R. et al. | 2000
- 857
-
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus IonsOhshima, T. / Uedono, A. / Itoh, H. / Yoshikawa, M. / Kojima, K. / Okada, S. / Nashiyama, I. / Abe, K. / Tanigawa, S. / Frank, T. et al. | 2000
- 861
-
Hot-Implantation of Phosphorus Ions into 4H-SiCImai, S. / Kobayashi, S. / Shinohe, T. / Fukuda, K. / Tanaka, Y. / Senzaki, J. / Tanoue, H. / Kobayashi, N. / Okushi, H. et al. | 2000
- 865
-
Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High TemperatureSenzaki, J. / Fukuda, K. / Imai, S. / Tanaka, Y. / Kobayashi, N. / Tanoue, H. / Okushi, H. / Arai, K. et al. | 2000
- 869
-
Damage Evolution in Al-implanted 4H SiCHallen, A. / Persson, P. O. A. / Kuznetsov, A. Y. / Hultman, L. / Svensson, B. G. et al. | 2000
- 873
-
Excimer Laser Annealing of Ion-Implanted 6H-Silicon CarbideHishida, Y. / Watanabe, M. / Nakashima, K. / Eryu, O. et al. | 2000
- 877
-
High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace AnnealingPanknin, D. / Wirth, H. / Anwand, W. / Brauer, G. / Skorupa, W. et al. | 2000
- 881
-
Consequences of High-Dose, High Temperature Al^+ Implantation in 6H-SiCStoemenos, J. / Pecz, B. / Heera, V. et al. | 2000
- 885
-
Al and Al/C High Dose Implantation in 4H-SiCBluet, J. M. / Pernot, J. / Billon, T. / Contreras, S. / Michaud, J. F. / Robert, J. L. / Camassel, J. et al. | 2000
- 889
-
Channeled Implants in 6H Silicon CarbideJanson, M. S. / Hallen, A. / Godignon, P. / Kuznetsov, A. Y. / Linnarsson, M. K. / Morvan, E. / Svensson, B. G. et al. | 2000
- 893
-
Damage Reduction in Channeled Ion Implanted 6H-SiCMorvan, E. / Mestres, N. / Campos, F. J. / Pascual, J. / Hallen, A. / Linnarsson, M. K. / Kuznetsov, A. Y. et al. | 2000
- 897
-
Ion Beam Induced Nanocrystallization of SiCHofgen, A. / Heera, V. / Mucklich, A. / Skorupa, W. et al. | 2000
- 901
-
High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step BunchingSaddow, S. E. / Williams, J. / Isaacs-Smith, T. / Capano, M. / Cooper, J. A. / Mazzola, M. S. / Hsieh, A. J. / Casady, J. B. et al. | 2000
- 905
-
Characterization of Implantation Layer in (1&unknown;100) Oriented 4H- and 6H-SiCSatoh, M. / Nakaike, Y. / Uchimura, K. / Kuriyama, K. et al. | 2000
- 909
-
Electrical and Structural Properties of Al and B Implanted 4H-SiCTanaka, Y. / Kobayashi, N. / Okumura, H. / Suzuki, R. / Ohdaira, T. / Hasegawa, M. / Ogura, M. / Yoshida, S. / Tanoue, H. et al. | 2000
- 913
-
Secondary Defect Distribution in High Energy Ion Implanted 4H-SiCOhno, T. / Kobayashi, N. et al. | 2000
- 917
-
Coimplantation Effects of (C and Si)/Ga in 6H-SiCTanaka, Y. / Kobayashi, N. / Hasegawa, M. / Ogura, M. / Ishida, Y. / Yoshida, S. / Okumura, H. / Tanoue, H. et al. | 2000
- 921
-
Improved Annealing Process for 6H-SiC p^+-n Junction Creation by Al ImplantationLazar, M. / Ottaviani, L. / Locatelli, M. L. / Planson, D. / Canut, B. / Chante, J. P. et al. | 2000
- 925
-
Characteristics of n-p Junction Diodes Made by Double-Implantations into SiCTucker, J. B. / Handy, E. M. / Rao, M. V. / Holland, O. W. / Papanicolaou, N. / Jones, K. A. et al. | 2000
- 929
-
Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiCHulsen, C. / Achtziger, N. / Reislohner, U. / Witthuhn, W. et al. | 2000
- 933
-
Formation of Passivated Layers in p-Type SiC by Low Energy Ion Implantation of HydrogenAchtziger, N. / Hulsen, C. / Janson, M. S. / Linnarsson, M. K. / Svensson, B. G. / Witthuhn, W. et al. | 2000
- 937
-
Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiCLinnarsson, M. K. / Spetz, A. L. / Janson, M. S. / Ekedahl, L. G. / Karlsson, S. / Schoner, A. / Lundstrom, I. / Svensson, B. G. et al. | 2000
- 941
-
Transient-Enhanced Diffusion of Boron in SiCLaube, M. / Pensl, G. et al. | 2000
- 945
-
Selective Doping of 6H-SiC by Diffusion of BoronSoloviev, S. I. / Gao, Y. / Khlebnikov, I. I. / Sudarshan, T. S. et al. | 2000
- 949
-
Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron DiffusionBockstedte, M. / Pankratov, O. et al. | 2000
- 953
-
Beryllium Implantation Doping of Silicon CarbideHenkel, T. / Tanaka, Y. / Kobayashi, N. / Nishizawa, S. / Hishita, S. et al. | 2000
- 957
-
Ion-Channeling Studies of Interfaces and Defect Properties in Silicon CarbideJiang, W. / Weber, W. J. et al. | 2000
- 961
-
Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent AnnealingPecz, B. / Klettke, O. / Pensl, G. / Stoemenos, J. et al. | 2000
- 965
-
Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal AnnealingPuff, W. / Balogh, A. G. / Mascher, P. et al. | 2000
- 969
-
Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation TechniquesPuff, W. / Balogh, A. G. / Mascher, P. et al. | 2000
- 973
-
Deep Centres Appearing in 6H and 4H SiC after Proton IrradiationLebedev, A. A. / Davydov, D. V. / Strel chuk, A. M. / Kuznetsov, A. N. / Bogdanova, E. V. / Kozlovski, V. V. / Savkina, N. S. et al. | 2000
- 977
-
Radiation-Induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton IrradiationAmekura, H. / Kishimoto, N. / Kono, K. et al. | 2000
- 981
-
Study of Contact Formation by High Temperature Deposition of Ni on SiCRobbie, K. / Jemander, S. T. / Lin, N. / Hallin, C. / Erlandsson, R. / Hansson, G. V. / Madsen, L. D. et al. | 2000
- 985
-
Ohmic Contact Formation on n-Type 6H-SiC using NiSi~2Nakamura, T. / Shimada, H. / Satoh, M. et al. | 2000
- 989
-
Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N~2 Gas, and Application to a UV SensorToda, T. / Ueda, Y. / Sawada, M. et al. | 2000
- 993
-
Adhesion and Microstructure of Ni Contacts to 3C-SiCKang, S. C. / Shin, M. W. et al. | 2000
- 997
-
Low Resistance Ohmic Contacts to n-SiC Using NiobiumOder, T. N. / Williams, J. R. / Bryant, K. W. / Bozack, M. J. / Crofton, J. et al. | 2000
- 1001
-
A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated TemperaturesJang, T. / Rutsch, G. / Odekirk, B. / Porter, L. M. et al. | 2000
- 1005
-
Improved Ohmic Contacts to 6H-SiC by Pulsed Laser ProcessingNakashima, K. / Eryu, O. / Ukai, S. / Yoshida, K. / Watanabe, M. et al. | 2000
- 1009
-
Al/Si Ohmic Contacts to p-Type 4H-SiC for Power DevicesKassamakova, L. / Kakanakov, R. / Kassamakov, I. / Nordell, N. / Savage, S. / Svedberg, E. B. / Madsen, L. D. et al. | 2000
- 1013
-
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiCLuo, Y. / Yan, F. / Tone, K. / Zhao, J. H. / Crofton, J. et al. | 2000
- 1017
-
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed under Various ConditionsVassilevski, K. V. / Zekentes, K. / Constantinidis, G. / Papanicolaou, N. / Nikitina, I. P. / Babanin, A. I. et al. | 2000
- 1021
-
Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiCLiu, S. / Potts, G. / Scofield, J. et al. | 2000
- 1025
-
A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact FormationKestle, A. / Wilks, S. P. / Dunstan, P. R. / Pritchard, M. / Pope, G. / Koh, A. / Mawby, P. A. et al. | 2000
- 1029
-
Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiCSkromme, B. J. / Luckowski, E. / Moore, K. / Clemens, S. / Resnick, D. / Gehoski, T. / Ganser, D. et al. | 2000
- 1033
-
Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact FormationEdwards, N. V. / Madsen, L. D. / Robbie, K. / Powell, G. D. / Jarrendahl, K. / Cobet, C. / Esser, N. / Richter, W. / Aspnes, D. E. et al. | 2000
- 1037
-
Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low PressureMasahara, K. / Ishida, Y. / Okumura, H. / Takahashi, T. / Kushibe, M. / Ohno, T. / Suzuki, T. / Tanaka, T. / Yoshida, S. / Arai, K. et al. | 2000
- 1041
-
SiC In Situ Pre-Growth Etching: A Thermodynamic StudyNeyret, E. / Di Cioccio, L. / Blanquet, E. / Raffy, C. / Pudda, C. / Billon, T. / Camassel, J. et al. | 2000
- 1045
-
The Effect of in Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-Ray Triple Crystal Diffractometry and Synchrotron X-Ray Topography StudyChaudhuri, J. / George, J. T. / Edgar, J. H. / Xie, Z. Y. / Rek, Z. et al. | 2000
- 1049
-
Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device ProcessDanielsson, E. / Zetterling, C.-M. / Ostling, M. / Lee, S. K. / Linthicum, K. / Thomson, D. B. / Nam, O.-H. / Davis, R. F. et al. | 2000
- 1053
-
Demonstration of Deep (80 mum) RIE Etching of SiC for MEMS and MMIC ApplicationsSheridan, D. C. / Casady, J. B. / Ellis, E. C. / Siergiej, R. R. / Cressler, J. D. / Strong, R. M. / Urban, W. M. / Valek, W. F. / Seiler, C. F. / Buhay, H. et al. | 2000
- 1057
-
Reactive Ion Etching in CF~4/O~2 Gas Mixtures for Fabricating SiC DevicesImaizumi, M. / Tarui, Y. / Sugimoto, H. / Tanimura, J. / Takami, T. / Ozeki, T. et al. | 2000
- 1061
-
Electrochemical C-V Profiling of p-Type 6H-SiCKayambaki, M. / Zekentes, K. et al. | 2000
- 1065
-
Electrically Active Traps at the 4H-SiC/SiO~2 Interface Responsible for the Limitation of the Channel MobilityBassler, M. / Afanas ev, V. V. / Pensl, G. / Schulz, M. et al. | 2000
- 1069
-
Anomalously High Density of Interface States Near the Conduction Band in SiO~2/4H-SiC MOS DevicesDas, M. K. / Um, B. S. / Cooper, J. A. et al. | 2000
- 1073
-
Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC InterfaceSuzuki, S. / Fukuda, K. / Okushi, H. / Nagai, K. / Sekigawa, T. / Yoshida, S. / Tanaka, T. / Arai, K. et al. | 2000
- 1077
-
Process Dependence of Inversion Layer Mobility in 4H-SiC DevicesAlok, D. / Arnold, E. / Egloff, R. et al. | 2000
- 1081
-
Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC EpilayerKoh, A. / Kestle, A. / Dunstan, P. R. / Pritchard, M. / Wilks, S. P. / Pope, G. / Mawby, P. A. et al. | 2000
- 1085
-
Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky DiodesZangooie, S. / Arwin, H. / Lundstrom, I. / Spetz, A. L. et al. | 2000
- 1089
-
Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon CarbideTreu, M. / Schorner, R. / Friedrichs, P. / Rupp, R. / Wiedenhofer, A. / Stephani, D. / Ryssel, H. et al. | 2000
- 1093
-
SiC Devices with ONO Stacked DielectricsLipkin, L. A. / Palmour, J. W. et al. | 2000
- 1097
-
The Effect of Si:C Source Ratio on SiO~2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiCChung, G. Y. / Tin, C. C. / Won, J. H. / Williams, J. R. et al. | 2000
- 1101
-
Channel Doped SiC-MOSFETsOgino, S. / Oikawa, T. / Ueno, K. et al. | 2000
- 1105
-
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11&unknown;20) FaceYano, H. / Hirao, T. / Kimoto, T. / Matsunami, H. / Asano, K. / Sugawara, Y. et al. | 2000
- 1109
-
MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet OxidationYano, H. / Kimoto, T. / Matsunami, H. / Bassler, M. / Pensl, G. et al. | 2000
- 1113
-
Interface Trap Profiles near the Band Edges in 6H-SiC MOSFETsSaks, N. S. / Mani, S. S. / Agarwal, A. K. et al. | 2000
- 1117
-
Characterization of SiC MOS Structures Using Conductance Spectroscopy and Capacitance Voltage AnalysisSveinbjornsson, E. O. / Ahnoff, M. / Olafsson, H. O. et al. | 2000
- 1121
-
Mobility in 6H-SiC n-Channel MOSFETsScozzie, C. J. / Lelis, A. J. / McLean, F. B. et al. | 2000
- 1125
-
Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiCMacfarlane, P. J. / Zvanut, M. E. et al. | 2000
- 1129
-
Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor StructuresYoshikawa, M. / Kojima, K. / Ohshima, T. / Itoh, H. / Okada, S. / Ishida, Y. et al. | 2000
- 1133
-
Atomic-Scale Engineering of the SiC-SiO~2 InterfacePantelides, S. T. / Duscher, G. / Di Ventra, M. / Buczko, R. / McDonald, K. / Huang, M. B. / Weller, R. A. / Baumvol, I. / Stedile, F. C. / Radtke, C. et al. | 2000
- 1137
-
Comparison of High-Temperature Electrical Characterizations of Pulsed-Laser Deposited AlN on 6H- and 4H-SiC from 25 to 450^oCLelis, A. J. / Scozzie, C. J. / McLean, F. B. / Geil, B. R. / Vispute, R. D. / Venkatesan, T. et al. | 2000
- 1141
-
Molding-based Thin Film Patterning Techniques for SiC Surface MicromachiningSong, X. / Guo, S. / Zorman, C. A. / Wu, C.-H. / Yasseen, A. A. / Mehregany, M. et al. | 2000
- 1145
-
Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion EtchingRajan, N. / Zorman, C. A. / Mehregany, M. et al. | 2000
- 1149
-
Preliminary Investigation of SiC on Silicon for Biomedical ApplicationsCarter, G. E. / Casady, J. B. / Bonds, J. / Okhuysen, M. E. / Scofield, J. D. / Saddow, S. E. et al. | 2000
- 1155
-
SiC and GaN High-Voltage Power Switching DevicesChow, T. P. et al. | 2000
- 1161
-
Electrical Impact of SiC Structural Crystal Defects on High Electric Field DevicesNeudeck, P. G. et al. | 2000
- 1167
-
Performance and Reliability Issues of SiC-Schottky DiodesRupp, R. / Treu, M. / Mauder, A. / Griebl, E. / Werner, W. / Bartsch, W. / Stephani, D. et al. | 2000
- 1171
-
Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD FilmsWahab, Q. / Ellison, A. / Zhang, J. / Forsberg, U. / Duranova, E. / Henry, A. / Madsen, L. D. / Janzen, E. et al. | 2000
- 1175
-
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky DiodesWahab, Q. / Ellison, A. / Hallin, C. / Henry, A. / Di Persio, J. / Martinez, R. / Janzen, E. et al. | 2000
- 1179
-
A 2.8 kV, 2 V Forward Drop JBS Diode with Low LeakageDahlquist, F. / Svedberg, J.-O. / Zetterling, C.-M. / Ostling, M. / Breitholtz, B. / Lendenmann, H. et al. | 2000
- 1183
-
3.6 kV 4H-SiC JBS Diodes with Low RonSSugawara, Y. / Asano, K. / Saito, R. et al. | 2000
- 1187
-
Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge CircuitTone, K. / Zhao, J. H. / Weiner, M. / Pan, M. et al. | 2000
- 1191
-
Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing TechniquesSudre, C. / Mooney, M. / Leveugle, C. / O Brien, J. / Lane, W. A. et al. | 2000
- 1195
-
Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky RectifiersTsuji, T. / Asai, R. / Ueno, K. / Ogino, S. et al. | 2000
- 1199
-
Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier DiodesMorrison, D. J. / Pidduck, A. J. / Moore, V. / Wilding, P. J. / Hilton, K. P. / Uren, M. J. / Johnson, C. M. et al. | 2000
- 1203
-
4H-SiC Device Scaling Development on Repaired Micropipe SubstratesSchattner, T. E. / Casady, J. B. / Smith, M. C. D. / Mazzola, M. S. / Dmitriev, V. / Rentakova, S. V. / Saddow, S. E. et al. | 2000
- 1207
-
Design and Characterization of a SiC Schottky Diode MixerEriksson, J. / Ferdos, F. / Zirath, H. / Rorsman, N. et al. | 2000
- 1211
-
Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface ImplantKhemka, V. / Chatty, K. / Chow, T. P. / Gutmann, R. J. et al. | 2000
- 1215
-
DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode BreakdownTorres, A. / Flament, O. / Musseau, O. / Billon, T. et al. | 2000
- 1219
-
6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown VoltageBrezeanu, G. / Badila, M. / Millan, J. / Godignon, P. / Locatelli, M. L. / Chante, J. P. / Lebedev, A. / Banu, V. et al. | 2000
- 1223
-
Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge TerminationZhang, Q. / Madangarli, V. / Tarplee, M. / Sudarshan, T. S. et al. | 2000
- 1227
-
Characterization of Schottky Contact on p-type 6H-SiCKamimura, K. / Okada, S. / Ito, H. / Nakao, M. / Onuma, Y. et al. | 2000
- 1231
-
Computer Simulation of p-Type SiC Schottky Diode using ATLASTarplee, M. / Madangarli, V. / Zhang, Q. / Palmer, P. / Sudarshan, T. S. et al. | 2000
- 1235
-
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor DepositionIshida, Y. / Takahashi, T. / Okumura, H. / Sekigawa, T. / Yoshida, S. et al. | 2000
- 1239
-
Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor DepositionKojima, K. / Yoshikawa, M. / Ohshima, T. / Itoh, H. / Okada, S. et al. | 2000
- 1243
-
Static and Dynamic Characteristics of 4H-SiC JEETs Designed for Different Blocking CategoriesFriedrichs, P. / Mitlehner, H. / Kaltschmidt, R. / Weinert, U. / Bartsch, W. / Hecht, C. / Dohnke, K. O. / Weis, B. / Stephani, D. et al. | 2000
- 1247
-
Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating WaferNoblanc, O. / Arnodo, C. / Dua, C. / Chartier, E. / Brylinski, C. et al. | 2000
- 1251
-
Surface Induced Instabilities in 4H-SiC Microwave MESFETsHilton, K. P. / Uren, M. J. / Hayes, D. G. / Wilding, P. J. / Johnson, H. K. / Guest, J. J. / Smith, B. H. et al. | 2000
- 1255
-
Characterization of SiC MESFETs on Conducting SubstratesNilsson, P. A. / Saroukhan, A. M. / Svedberg, J.-O. / Konstantinov, A. / Karlsson, S. / Adas, C. / Gustafsson, U. / Harris, C. / Rorsman, N. / Eriksson, J. et al. | 2000
- 1259
-
Fabrication, Characterization, and Modeling of SiC MESFETsRorsman, N. / Eriksson, J. / Zirath, H. et al. | 2000
- 1263
-
Physical Simulations on the Operation of 4H-SiC Microwave Power TransistorsJonsson, R. / Wahab, Q. / Rudner, S. et al. | 2000
- 1267
-
Properties of Transmission Lines on Various SiC SubstratesRoyet, A. S. / Cabon, B. / Ouisse, T. / Billon, T. et al. | 2000
- 1271
-
High Temperature, High Current, 4H-SiC Accu-DMOSFETSingh, R. / Ryu, S.-H. / Palmour, J. W. et al. | 2000
- 1275
-
4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETsSuvorov, A. V. / Lipkin, L. A. / Johnson, G. M. / Singh, R. / Palmour, J. W. et al. | 2000
- 1279
-
Nitrogen vs. Phosphorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiCChatty, K. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. et al. | 2000
- 1283
-
Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS StructuresFukuda, K. / Suzuki, S. / Senzaki, J. / Kosugi, R. / Nagai, K. / Sekigawa, T. / Okushi, H. / Yoshida, S. / Tanaka, T. / Arai, K. et al. | 2000
- 1287
-
Accumulation-Mode SiC Power MOSFET Design IssuesWang, Y. / Weitzel, C. / Bhatnagar, M. et al. | 2000
- 1291
-
Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit TechnologyBrown, D. / McGrath, D. / Nielsen, M. / Krishnamurthy, N. / Kretchmer, J. W. / Ghezzo, M. et al. | 2000
- 1295
-
Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800VSchorner, R. / Friedrichs, P. / Peters, D. / Mitlehner, H. / Weis, B. / Stephani, D. et al. | 2000
- 1299
-
Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETsOhshima, T. / Yoshikawa, M. / Itoh, H. / Kojima, K. / Okada, S. / Nashiyama, I. et al. | 2000
- 1303
-
Effect of Boron Implantation on 6H-SiC N-MOSFET Interface PropertiesGodignon, P. / Jorda, X. / Vellvehi, M. / Berberich, S. / Montserrat, J. / Ottaviani, L. et al. | 2000
- 1307
-
Investigation of Lateral RESURF, 6H-SiC MOSFETsAgarwal, A. K. / Saks, N. S. / Mani, S. S. / Hegde, V. S. / Sanger, P. A. et al. | 2000
- 1311
-
Highly Durable SiC nMISFET's at 450^oCZhu, W. J. / Wang, X. W. / Ma, T. P. et al. | 2000
- 1315
-
SiC MISFETs with MBE-grown AIN Gate DielectricZetterling, C.-M. / Ostling, M. / Yano, H. / Kimoto, T. / Matsunami, H. / Linthicum, K. / Davis, R. F. et al. | 2000
- 1319
-
Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current DensitiesDyakonova, N. V. / Ivanov, P. A. / Kozlov, V. A. / Levinshtein, M. E. / Palmour, J. W. / Rumyantsev, S. L. / Singh, R. et al. | 2000
- 1323
-
Current Voltage Characteristics of High-Voltage 4H Silicon Carbide DiodesZimmermann, U. / Hallen, A. / Breitholtz, B. et al. | 2000
- 1327
-
Dynamic Avalanche and Trapped Charge in 4H-SiC DiodesDomeij, M. / Breitholtz, B. / Aberg, D. / Martinez, A. / Bergman, P. et al. | 2000
- 1331
-
Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction RectifiersChatty, K. / Khemka, V. / Chow, T. P. / Gutmann, R. J. et al. | 2000
- 1335
-
Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-OffMartinez, A. / Lindefelt, U. et al. | 2000
- 1339
-
Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring TerminationSheridan, D. C. / Niu, G. / Merrett, J. N. / Cressler, J. D. / Ellis, C. / Tin, C. C. / Siergiej, R. R. et al. | 2000
- 1343
-
Transient Characterization of SiC P-N DiodeKeskar, N. / Shenai, K. / Neudeck, P. G. et al. | 2000
- 1347
-
Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse CharacteristicsMiyamoto, N. / Saitoh, A. / Kimoto, T. / Matsunami, H. / Hishida, Y. / Watanabe, M. et al. | 2000
- 1351
-
Defect Modeling and Simulation of 4H-SiC P-N DiodeKeskar, N. / Shenai, K. / Neudeck, P. et al. | 2000
- 1355
-
6H-SiC Diodes with Cellular Structure to Avoid Micropipe EffectsBadila, M. / Brezeanu, G. / Chante, J. P. / Locatelli, M.-L. / Millan, J. / Godignon, P. / Lebedev, A. / Lungu, P. / Banu, V. et al. | 2000
- 1359
-
A Closed-Form Analytical Solution of 6H-SiC Punch-Through Junction Breakdown VoltagesWang, J. / Williams, B. W. / Madathil, S. E. / Desouza, M. M. et al. | 2000
- 1363
-
Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC CharacterisationIsoird, K. / Ottaviani, L. / Locatelli, M. L. / Planson, D. / Raynaud, C. / Bevilacqua, P. / Chante, J. P. et al. | 2000
- 1367
-
Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction RectifiersFedison, J. B. / Li, Z. / Khemka, V. / Ramungul, N. / Chow, T. P. / Ghezzo, M. / Kretchmer, J. W. / Elasser, A. et al. | 2000
- 1371
-
6.2kV 4H-SiC pin Diode with Low Forward Voltage DropSugawara, Y. / Asano, K. / Singh, R. / Palmour, J. W. et al. | 2000
- 1375
-
Theoretical and Experimental Study of 4H-SiC Junction Edge TerminationLi, X. / Tone, K. / Cao, L. H. / Alexandrov, P. / Fursin, L. / Zhao, J. H. et al. | 2000
- 1379
-
Monte Carlo Simulation of 4H-SiC IMPATT DiodesGruzinskis, V. / Luo, Y. / Zhao, J. H. / Weiner, M. / Pan, M. / Shiktorov, P. / Starikov, E. et al. | 2000
- 1383
-
Demonstration of High Performance Visible-Blind 4H-SiC Avalanche PhotodiodesYan, F. / Luo, Y. / Zhao, J. H. / Dries, C. / Olsen, G. et al. | 2000
- 1387
-
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor DevelopmentAgarwal, A. / Ryu, S.-H. / Singh, R. / Kordina, O. / Palmour, J. W. et al. | 2000
- 1391
-
Factors Influencing the Design and Performance of 4H-SiC GTO ThyristorsFedison, J. B. / Chow, T. P. / Ghezzo, M. / Kretchmer, J. W. / Nielsen, M. C. et al. | 2000
- 1395
-
4H-SiC Gate Turn-Off Thyristor Designs for Very High Power ControlShah, P. B. / Geil, B. R. / Jones, K. A. / Griffin, T. E. / Derenge, M. A. et al. | 2000
- 1399
-
Fabrication and Characterization of 4H-SiC GTOs and DiodesFursin, L. / Tone, K. / Alexandrov, P. / Luo, Y. / Cao, L. / Zhao, J. / Weiner, M. / Pan, M. et al. | 2000
- 1403
-
100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches Used in an All-SiC PWM InverterSeshadri, S. / Hall, W. B. / Kotvas, J. C. / Sanger, P. A. et al. | 2000
- 1407
-
SiC-Power RectifiersHeld, R. / Fullmann, M. / Niemann, E. et al. | 2000
- 1411
-
Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTsWang, J. / Williams, B. W. / Madathil, S. E. / Desouza, M. M. et al. | 2000
- 1415
-
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiCTang, Y. / Ramungul, N. / Chow, T. P. et al. | 2000
- 1419
-
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar TransistorsAdachi, K. / Johnson, C. M. / Ortolland, S. / Wright, N. G. / O Neill, A. G. et al. | 2000
- 1423
-
Operation of a 2500V 150A Si-IGBT/SiC Diode ModuleLendenmann, H. / Johansson, N. / Mou, D. / Frischholz, M. / Astrand, B. / Isberg, P. / Ovren, C. et al. | 2000
- 1427
-
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature OperationRyu, S.-H. / Singh, R. / Palmour, J. W. et al. | 2000
- 1431
-
High Temperature 4H-SiC FET for Gas Sensing ApplicationsSavage, S. M. / Konstantinov, A. / Saroukhan, A. M. / Harris, C. I. et al. | 2000
- 1435
-
High Temperature Gas Sensors Based on Catalytic Metal Field Effect TransistorsSvenningstorp, H. / Uneus, L. / Tobias, P. / Lundstrom, I. / Ekedahl, L.-G. / Spetz, A. L. et al. | 2000
- 1439
-
SiC-Based Gas Sensor DevelopmentHunter, G. W. / Neudeck, P. G. / Gray, M. / Androjna, D. / Chen, L.-Y. / Hoffman, R. W. / Liu, C. C. / Wu, Q. H. et al. | 2000
- 1443
-
Fabrication of SiC Hydrogen Sensor by Pd-ImplantationMuntele, C. I. / Ila, D. / Williams, E. K. / Poker, D. B. / Hensley, D. K. / Larkin, D. J. / Muntele, I. et al. | 2000
- 1447
-
Epitaxial 6H-SiC Layers as Detectors of Nuclear ParticlesLebedev, A. A. / Savkina, N. S. / Ivanov, A. M. / Strokan, N. B. / Davydov, D. V. et al. | 2000
- 1453
-
GaN Quantum Dots on Sapphire and Si SubstratesMorkoc, H. / Reshchikov, M. A. / Baski, A. / Nathan, M. I. et al. | 2000
- 1459
-
Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In ExposureIde, T. / Shimizu, M. / Shen, X.-Q. / Hara, S. / Okumura, H. / Nemoto, T. et al. | 2000
- 1463
-
Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter SiliconLiaw, H. M. / Venugopal, R. / Wan, J. / Doyle, R. / Fejes, P. / Loboda, M. J. / Melloch, M. R. et al. | 2000
- 1467
-
3C-SiC Pseudosubstrates for the Growth of Cubic GaNAboughe-Nze, P. / Chassagne, T. / Chaussende, D. / Monteil, Y. / Cauwet, F. / Bustarret, E. / Deneuville, A. / Bentoumi, G. / Martinez-Guerrerro, E. / Daudin, B. et al. | 2000
- 1471
-
Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin FilmsDavis, R. F. / Nam, O.-H. / Zheleva, T. S. / Gehrke, T. / Linthicum, K. J. / Rajagopal, P. et al. | 2000
- 1477
-
Pendeoepitaxy of GaN and InGaN LEDs on SiCKong, H. S. / Edmond, J. / Doverspike, K. / Emerson, D. / Bulman, G. / Haberern, K. / Dieringer, H. / Slater, D. et al. | 2000
- 1483
-
Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO~2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman SpectroscopyBertram, F. / Riemann, T. / Rudloff, D. / Christen, J. / Kaschner, A. / Hoffmann, A. / Hiramatsu, K. et al. | 2000
- 1487
-
High Quality GaN on Si(111) Using (AlN/GaN)~x Superlattice and Maskless ELOLahreche, H. / Bousquet, V. / Laugt, M. / Tottereau, O. / Vennegues, P. / Beaumont, B. / Gibart, P. et al. | 2000
- 1491
-
Pendeo-Epitaxy™ Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor DepositionGehrke, T. / Linthicum, K. J. / Rajagopal, P. / Preble, E. A. / Carlson, E. P. / Robin, B. M. / Davis, R. F. et al. | 2000
- 1495
-
Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase EpitaxyKachi, T. / Itoh, K. / Tomita, K. / Tadano, H. et al. | 2000
- 1499
-
Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO~2 at Low Growth TemperatureKang, S. / Doolittle, W. A. / Stock, S. R. / Brown, A. l. et al. | 2000
- 1503
-
Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor ResearchVispute, R. D. / Enck, R. / Patel, A. / Ming, B. / Sharma, R. P. / Venkatesan, T. / Scozzie, C. J. / Lelis, A. / McLean, F. B. / Zheleva, T. et al. | 2000
- 1507
-
Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour DepositionWilliams, V. / Pernot, E. / Ramberg, E. / Blanquet, E. / Bluet, J. M. / Madar, R. et al. | 2000
- 1511
-
AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Conditions in Afterglow RegionYasui, K. / Hoshino, S. / Akahane, T. et al. | 2000
- 1515
-
Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport ProcessAvrov, D. D. / Dorozhkin, S. I. / Lebedev, A. O. / Rastegaev, V. P. / Tairov, Y. M. et al. | 2000
- 1519
-
Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiCTungasmita, S. / Persson, P. O. A. / Jarrendahl, K. / Hultman, L. / Birch, J. et al. | 2000
- 1523
-
Pulsed Laser Deposition of Oriented Aluminum Nitride Thin Films and Their ApplicationMeinschien, J. / Falk, F. / Stafast, H. et al. | 2000
- 1527
-
State of Art of c-BN Growth Physics: Substrate EffectMasri, P. / Guiot, E. / Mortet, V. / Laridjani, M. R. / Averous, M. et al. | 2000
- 1533
-
Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001)Yang, Y. / Bellitto, V. J. / Thoms, B. D. / Koleske, D. D. / Wickenden, A. E. / Henry, R. L. et al. | 2000
- 1537
-
Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001)Bellitto, V. J. / Thoms, B. D. / Koleske, D. D. / Wickenden, A. E. / Henry, R. L. et al. | 2000
- 1541
-
The Reaction of Oxygen with GaN(0001)Thoms, B. D. / Bellitto, V. J. / Yang, Y. / Koleske, D. D. / Wickenden, A. E. / Henry, R. L. et al. | 2000
- 1545
-
Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam EpitaxyOkumura, H. / Koizumi, T. / Ishida, Y. / Cho, S.-H. / Shen, X.-Q. / Yoshida, S. et al. | 2000
- 1549
-
Analysis of Dislocation Densities and Nanopipe Formation in MBE-Grown AlN-LayersEbling, D. G. / Kirste, L. / Rattunde, M. / Portmann, J. / Brenn, R. / Benz, K. W. / Tillmann, K. et al. | 2000
- 1553
-
Correlation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH~3Nahm, K. S. / Yang, S. H. / Ahn, S. H. / Suh, E.-K. et al. | 2000
- 1557
-
Improved Electron Emission from Defective Diamond Film Deposited by CVD MethodShow, Y. / Matsukawa, T. / Ito, H. / Iwase, M. / Izumi, T. et al. | 2000
- 1561
-
Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related MaterialsVan de Walle, C. G. et al. | 2000
- 1567
-
Nonabrupt Interface Related Exciton Energy Shifts in GaN/Al~xGa~1~-~xN Quantum DotsFilho, J. R. / Lemos, V. / de Sousa, J. S. / Farias, G. A. / Freire, V. N. et al. | 2000
- 1571
-
Radiative Recombination in InGaN/GaN Multiple Quantum WellsBergman, J. P. / Monemar, B. / Pozina, G. / Sernelius, B. E. / Holtz, P. O. / Amano, H. / Akasaki, I. et al. | 2000
- 1575
-
Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence SpectroscopyHolst, J. / Kaschner, A. / Hoffmann, A. / Broser, I. / Fischer, P. / Bertram, F. / Riemann, T. / Christen, J. / Hiramatsu, K. / Shibata, T. et al. | 2000
- 1579
-
Structured Ultrafast Carrier Drift Velocity in Photoexcited Zincblende GaNRodrigues, C. G. / Vasconcellos, A. R. / Luzzi, R. / Lemos, V. / Freire, V. N. et al. | 2000
- 1583
-
Characterization of Thick GaN Layers Using Guided Optical WavesCiplys, D. / Rimeika, R. / Khan, M. A. / Yang, J. W. / Gaska, R. / Shur, M. S. et al. | 2000
- 1587
-
Polarization Memory in Band Edge Luminescence from Free Standing Gallium NitrideKompan, M. E. / Raevki, S. D. / Safronov, I. N. / Shabanov, I. Y. / Zhilyaev, Y. V. et al. | 2000
- 1591
-
Enhancement of UV-Sensitivity in GaN/GaAs Heterostructures by Si-DopingLisker, M. / Witte, H. / Krtschil, A. / Christen, J. / As, D. J. / Schottker, B. / Lischka, K. et al. | 2000
- 1595
-
Resonant Raman Scattering and the Emission Process in Zincblende-In~xGa~1~-~xNLemos, V. / Silveira, E. / Leite, J. R. / Tabata, A. / Trentin, R. / Frey, T. / As, D. J. / Schikora, D. / Lischka, K. et al. | 2000
- 1599
-
A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon CarbideEdgar, J. H. / Robins, L. H. / Coatney, S. E. / Liu, L. / Chaudhuri, J. / Ignatiev, K. / Rek, Z. et al. | 2000
- 1603
-
Low Frequency Noise in n-GaN with High Electron MobilityRumyantsev, S. L. / Look, D. C. / Levinshtein, M. E. / Khan, M. A. / Simin, G. / Adivarahan, V. / Molnar, R. J. / Shur, M. S. et al. | 2000
- 1609
-
Role of Alloy Fluctuations in InGaN-Based LEDs and Laser DiodesNakamura, S. et al. | 2000
- 1615
-
Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaNSuvkhanov, A. / Parikh, N. / Usov, I. / Hunn, J. / Withrow, S. / Thomson, D. / Gehrke, T. / Davis, R. F. / Krasnobaev, L. Y. et al. | 2000
- 1619
-
Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature AnnealingPrakash, S. / Tan, L. S. / Ng, K. M. / Raman, A. / Chua, S. J. / Wee, A. T. S. / Lim, S. L. et al. | 2000
- 1623
-
Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting DiodesPophristic, M. / Long, F. H. / Tran, C. / Ferguson, I. T. et al. | 2000
- 1627
-
GaN PIN Photodiodes Grown on Sapphire and SiC SubstratesSmith, G. M. / Chriss, M. F. / Tamweber, F. D. / Boutros, K. S. / Flynn, J. S. / Keogh, D. M. et al. | 2000
- 1631
-
Temperature Dependent Performance of GaN Schottky Diode RectifiersCao, X. A. / Dang, G. T. / Zhang, A. P. / Ren, F. / Pearton, S. J. / Lee, C.-M. / Chuo, C.-C. / Chyi, J.-I. / Chi, G. C. / Han, J. et al. | 2000
- 1635
-
Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n^+-n^--n-n^+ GaN StructuresZhao, J. H. / Gruzinskis, V. / Weiner, M. / Pan, M. / Shiktorov, P. / Starikov, E. et al. | 2000
- 1639
-
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching ProcessLee, W. S. / Chung, K. W. / Shin, M. W. et al. | 2000
- 1643
-
Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon CarbideSheppard, S. T. / Doverspike, K. / Leonard, M. / Pribble, W. L. / Allen, S. T. / Palmour, J. W. et al. | 2000
- 1647
-
Characterization of AlGaN/GaN HEMT Devices Grown by MBEMacElwee, T. W. / Bardwell, J. A. / Tang, H. / Webb, J. B. et al. | 2000
- 1651
-
A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6H-SiC Homojunction DiodesVacas, J. / Lahreche, H. / Monteiro, T. / Gaspar, C. / Pereira, E. / Brylinski, C. / Forte-Poisson, M. A. et al. | 2000
- 1655
-
Electrical Characteristics of 6H-SiC/GaN Isotype n-n HeterojunctionsKuznetsov, N. I. / Nikolaev, A. E. / Melnik, Y. V. / Nikitina, I. P. et al. | 2000