Temperature Effects in SiC Epitaxial Growth (English)
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In:
European conference on silicon carbide and related materials
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157-160
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2003
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Temperature Effects in SiC Epitaxial Growth
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Contributors:
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Conference:4th, European conference on silicon carbide and related materials ; 2002 ; Linkoping, Sweden
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Published in:MATRIALS SCIENCE FORUM ; 433-436 ; 157-160
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Publisher:
- New search for: Trans Tech Publications
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Publication date:2003-01-01
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Size:4 pages
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) SubstrateNagasawa, H. / Yagi, K. / Kawahara, T. / Hatta, N. et al. | 2003
- 9
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Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, ^1^3C Labeling of Source Material and Numerical ModelingWellmann, P. J. / Herro, Z. / Selder, M. / Durst, F. / Pusche, R. / Hundhausen, M. / Ley, L. / Winnacker, A. et al. | 2003
- 13
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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation MethodNishizawa, S.-i. / Michikawa, Y. / Kato, T. / Hirose, F. / Oyanagi, N. / Arai, K. et al. | 2003
- 17
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On the Early Stages of Sublimation Growth of 4H-SiC Using 8^o Off-Oriented SubstratesSchulz, D. / Lechner, M. / Rost, H.-J. / Siche, D. / Wollweber, J. et al. | 2003
- 21
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Growth of High Quality p-Type 4H-SiC Substrates by HTCVDSundqvist, B. / Ellison, A. / Jonsson, A. / Henry, A. / Hallin, C. / Bergman, J. P. / Magnusson, B. / Janzen, E. et al. | 2003
- 25
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Towards a Continuous Feeding of the PVT Growth Process: an Experimental InvestigationChaussende, D. / Baillet, F. / Charpentier, L. / Pernot, E. / Pons, M. / Madar, R. et al. | 2003
- 29
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Growth of Faceted Free-Spreading SiC Bulk Crystals by SublimationMokhov, E. N. / Ramm, M. G. / Ramm, M. S. / Roenkov, A. D. / Vodakov, Y. A. / Karpov, S. Y. / Makarov, Y. A. / Helava, H. et al. | 2003
- 33
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HTCVD Grown Semi-Insulating SiC SubstratesEllison, A. / Magnusson, B. / Son, N. T. / Storasta, L. / Janzen, E. et al. | 2003
- 39
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Sublimation-Grown Semi-Insulating SiC for High Frequency DevicesMuller, S. G. / Brady, M. F. / Brixius, W. H. / Glass, R. C. / Hobgood, H. M. / Jenny, J. R. / Leonard, R. T. / Malta, D. P. / Powell, A. R. / Tsvetkov, V. F. et al. | 2003
- 45
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Defects in Semi-Insulating SiC SubstratesSon, N. T. / Magnusson, B. / Zolnai, Z. / Ellison, A. / Janzen, E. et al. | 2003
- 51
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Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal GrowthBickermann, M. / Hofmann, D. / Straubinger, T. L. / Weingartner, R. / Winnacker, A. et al. | 2003
- 55
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PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC CrystalsRasp, M. / Straubinger, T. L. / Schmitt, E. / Bickermann, M. / Reshanov, S. / Sadowski, H. et al. | 2003
- 59
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Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiCSuleimanov, Y. M. / Lulu, S. / Tarasov, I. / Ostapenko, S. / Heydemann, V. D. / Roth, M. D. / Kordina, O. / MacMillan, M. F. / Saddow, S. E. et al. | 2003
- 63
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Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely MethodSemmelroth, K. / Schmid, F. / Karg, D. / Pensl, G. / Maier, M. / Greulich-Weber, S. / Spaeth, J.-M. et al. | 2003
- 67
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Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature GradientHerro, Z. / Bickermann, M. / Epelbaum, B. M. / Masri, P. / Winnacker, A. et al. | 2003
- 71
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Uniformization of Radial Temperature Gradient in Sublimation Growth of SiCTanaka, H. / Nishiguchi, T. / Sasaki, M. / Ohshima, S. / Nishino, S. et al. | 2003
- 75
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Effect of Ambient on 4H-SiC Bulk Crystals Grown by SublimationCiechonski, R. R. / Yakimova, R. / Syvajarvi, M. / Janzen, E. et al. | 2003
- 79
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Continuous Growth of SiC Single Crystal from Ultrafine Particle PrecursorYamada, Y. / Sagawa, K. / Nakashima, S. et al. | 2003
- 83
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Defect Reduction in SiC Crystals Grown by the Modified Lely MethodAnikin, M. M. / Pons, M. / Pernot, E. / Madar, R. et al. | 2003
- 87
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A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT ProcessCharpentier, L. / Baillet, F. / Chaussende, D. / Pernot, E. / Pons, M. / Madar, R. et al. | 2003
- 91
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Properties of nitrogen-doped 4H-SiC single crystals grown by physical vapour transportRost, H.J. / Irmscher, K. / Doerschel, J. / Siche, D. / Schulz, D. / Wollweber, J. et al. | 2003
- 91
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Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor TransportRost, H.-J. / Irmscher, K. / Doerschel, J. / Siche, D. / Schulz, D. / Wollweber, J. et al. | 2003
- 95
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Morphological Features of Sublimation-Grown 4H-SiC LayersSchulz, D. / Doerschel, J. et al. | 2003
- 99
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Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk GrowthDrachev, R. V. / Cherednichenko, D. I. / Khlebnikov, I. I. / Khlebnikov, Y. I. / Sudarshan, T. S. et al. | 2003
- 103
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Heat Transfer Modeling of a New Crystal Growth ProcessBaillet, F. / Chaussende, D. / Charpentier, L. / Pernot, E. / Pons, M. / Madar, R. et al. | 2003
- 107
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Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress DistributionAgueev, O. A. / Svetlichnyi, A. M. / Klovo, A. G. / Kocherov, A. N. / Izotovs, D. A. et al. | 2003
- 111
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Crystal Interface Shape Simulation during SiC Sublimation GrowthBottcher, K. / Schulz, D. et al. | 2003
- 115
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Growth at High Rates and Characterization of Bulk 3C-SiC MaterialFerro, G. / Balloud, C. / Juillaguet, S. / Vicente, P. / Camassel, J. / Monteil, Y. et al. | 2003
- 119
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Comparison between Ar and N~2 for High-Temperature Treatment of 4H-SiC SubstratesYounes, G. / Ferro, G. / Jacquier, C. / Dazord, J. / Monteil, Y. et al. | 2003
- 125
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SiC Epitaxy on Non-Standard SurfacesMatsunami, H. / Kimoto, T. et al. | 2003
- 131
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4H-SiC Epitaxial Growth for High-Power DevicesTsuchida, H. / Kamata, I. / Jikimoto, T. / Miyanagi, T. / Izumi, K. et al. | 2003
- 137
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Predictions of Nitrogen Doping in SiC Epitaxial LayersDanielsson, O. / Forsberg, U. / Janzen, E. et al. | 2003
- 141
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Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiCMeziere, J. / Pons, M. / Dedulle, J.-M. / Blanquet, E. / Ferret, P. / Di Cioccio, L. / Billon, T. et al. | 2003
- 145
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Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the PrecursorsWang, R. / Bhat, I. B. / Chow, T. P. et al. | 2003
- 149
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Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor DepositionNakamura, S.-i. / Kimoto, T. / Matsunami, H. et al. | 2003
- 153
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Nitrogen Delta Doping in 4H-SiC EpilayersHenry, A. / Storasta, L. / Janzen, E. et al. | 2003
- 157
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Temperature Effects in SiC Epitaxial GrowthOliver, J. D. et al. | 2003
- 161
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Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVDFujihira, K. / Kimoto, T. / Matsunami, H. et al. | 2003
- 165
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Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane SystemSartel, C. / Bluet, J. M. / Souliere, V. / El-Harrouni, I. / Monteil, Y. / Mermoux, M. / Guillot, G. et al. | 2003
- 169
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Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC LayersSyvajarvi, M. / Yakimova, R. / Ciechonski, R. R. / Davydov, D. / Lebedev, A. A. / Janzen, E. et al. | 2003
- 173
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Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron AnnihilationDannefaer, S. / Avalos, V. / Syvajarvi, M. / Yakimova, R. et al. | 2003
- 177
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Computational Modeling for the Development of CVD SiC Epitaxial Growth ProcessesMelnychuk, G. / Koshka, Y. / Yingquan, S. / Mazzola, M. / Pittman, C. U. et al. | 2003
- 181
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Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?Jacquier, C. / Ferro, G. / Cauwet, F. / Viala, J. C. / Monteil, Y. et al. | 2003
- 185
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Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVDSaitoh, H. / Kimoto, T. / Matsunami, H. et al. | 2003
- 189
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Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial LayersSavkina, N. S. / Shuman, V. B. / Ratnikov, V. V. / Rogachev, A. Y. / Lebedev, A. A. et al. | 2003
- 193
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The Effect of Thermal Gradients on SiC WafersHallin, C. / Joelsson, T. / Janzen, E. et al. | 2003
- 197
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Complete Micropipe Dissociation in 4H-SiC(03&unknown;8) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier DiodesKimoto, T. / Danno, K. / Fujihira, K. / Shiomi, H. / Matsunami, H. et al. | 2003
- 201
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Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid MethodFerret, P. / Leray, A. / Feuillet, G. / Lyan, P. / Pudda, C. / Billon, T. et al. | 2003
- 205
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Growth of p-Type SiC Layer by Sublimation EpitaxyOhta, S. / Furusho, T. / Takagi, H. / Ohshima, S. / Nisino, S. et al. | 2003
- 209
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Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon SubstrateOkui, Y. / Jacob, C. / Ohshima, S. / Nishino, S. et al. | 2003
- 213
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Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-EpitaxyNeudeck, P. G. / Powell, J. A. / Spry, D. J. / Trunek, A. J. / Huang, X. / Vetter, W. M. / Dudley, M. / Skowronski, M. / Liu, J. et al. | 2003
- 217
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Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition - Laser Frequency DependenceKusumori, T. / Muto, H. et al. | 2003
- 221
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Thin Film SiC Epitaxy on Si(111) from Acetylene PrecursorDe Renzi, V. / Biagi, R. / del Pennino, U. et al. | 2003
- 225
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Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and I-V CharacterizationMuto, H. / Asano, T. / Kusumori, T. et al. | 2003
- 229
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Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon SubstratesShimizu, H. / Hisada, K. et al. | 2003
- 233
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High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) SubstratesWeih, P. / Cimalla, V. / Forster, C. / Pezoldt, J. / Stauden, T. / Spiess, L. / Romanus, H. / Hermann, M. / Eickhoff, M. / Masri, P. et al. | 2003
- 237
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SiC Synthesis by Fullerene Free Jets on Si(111) at Low TemperaturesAversa, L. / Verucchi, R. / Pedio, M. / Iannotta, S. et al. | 2003
- 241
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Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC WafersMurata, K. / Fujioka, N. / Chinone, Y. / Nishino, S. et al. | 2003
- 247
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Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and DevicesDudley, M. / Huang, X. / Vetter, W. M. / Neudeck, P. G. et al. | 2003
- 253
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Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during AnnealingChung, H. J. / Liu, J.-Q. / Henry, A. / Skowronski, M. et al. | 2003
- 257
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Lattice Dynamics of 4H-SiC by Inelastic X-Ray ScatteringSerrano, J. / Strempfer, J. / Cardona, M. / Schwoerer-Bohning, M. / Requardt, H. / Lorenzen, M. / Stojetz, B. / Pavone, P. / Choyke, W. J. et al. | 2003
- 261
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Conditions for Micropipe Dissociation by 4H-SiC CVD GrowthKamata, I. / Tsuchida, H. / Jikimoto, T. / Miyanagi, T. / Izumi, K. et al. | 2003
- 265
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Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy ImagingPernot, E. / El Harrouni, I. / Mermoux, M. / Bluet, J. M. / Anikin, M. / Chaussende, D. / Pons, M. / Madar, R. et al. | 2003
- 269
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Doping-Related Strain in n-Doped 4H-SiC CrystalsJacobson, H. / Birch, J. / Lindefelt, U. / Hallin, C. / Henry, A. / Yakimova, R. / Janzen, E. et al. | 2003
- 273
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Stacking Faults in 3C-SiC Relax Lattice DeformationHatta, N. / Yagi, K. / Kawahara, T. / Nagasawa, H. et al. | 2003
- 277
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Characteristics of Planar Defects in Shallow Trenches Related to the Presence of MicropipesVouroutzis, N. / Syvajarvi, M. / Stoemenos, J. / Yakimova, R. et al. | 2003
- 281
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Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial LayersYakimova, R. / Syvajarvi, M. / Iakimov, T. / Okunev, A. O. / Udal tsov, V. E. / Janzen, E. et al. | 2003
- 285
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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiCMorales, F. M. / Molina, S. I. / Araujo, D. / Cimalla, V. / Pezoldt, J. et al. | 2003
- 289
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High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single CrystalsSeitz, C. / Rempel, A. A. / Magerl, A. / Gomm, M. / Sprengel, W. / Schaefer, H.-E. et al. | 2003
- 293
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Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum SublimationSavkina, N. S. / Strel chuk, A. M. / Sorokin, L. M. / Mosina, G. N. / Tregubova, A. S. / Solov ev, V. V. / Lebedev, A. A. et al. | 2003
- 297
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Dynamics of 4H-SiC PlasticityKarpov, S. Y. / Kulik, A. V. / Ramm, M. S. / Makarov, Y. N. et al. | 2003
- 301
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Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiCMagnusson, B. / Bergman, J. P. / Janzen, E. et al. | 2003
- 305
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Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence SpectroscopySteeds, J. W. / Evans, G. A. / Furkert, S. / Ley, L. / Hundhausen, M. / Schulz, N. / Pensl, G. et al. | 2003
- 309
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Photoluminescence Up-Conversion Processes in SiCWagner, M. / Ivanov, I. G. / Storasta, L. / Bergman, J. P. / Magnusson, B. / Chen, W. M. / Janzen, E. et al. | 2003
- 313
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New Photoluminescence Features in 4H-SiC Induced by HydrogenationKoshka, Y. / Mazzola, M. S. / Wyatt, J. L. et al. | 2003
- 317
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Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current SpectroscopyBinetti, S. / Le Donne, A. / Acciarri, M. / Cerminara, M. / Pizzini, S. et al. | 2003
- 321
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Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and AluminumIvanov, I. G. / Ellison, A. / Janzen, E. et al. | 2003
- 325
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Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiCPusche, R. / Hundhausen, M. / Ley, L. et al. | 2003
- 329
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Infrared Optical Properties of 3C, 4H and 6H Silicon CarbideLindquist, O. P. A. / Arwin, H. / Henry, A. / Jarrendahl, K. et al. | 2003
- 333
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Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiCWeingartner, R. / Bickermann, M. / Herro, Z. / Kunecke, U. / Sakwe, S. A. / Wellmann, P. J. / Winnacker, A. et al. | 2003
- 337
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Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk CrystalsBickermann, M. / Weingartner, R. / Herro, Z. / Hofmann, D. / Kunecke, U. / Wellmann, P. J. / Winnacker, A. et al. | 2003
- 341
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Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiCWeingartner, R. / Albrecht, A. / Wellmann, P. J. / Winnacker, A. et al. | 2003
- 345
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D~I~I PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiCCarlsson, F. H. C. / Sridhara, S. G. / Hallen, A. / Bergman, J. P. / Janzen, E. et al. | 2003
- 349
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Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime MappingMasarotto, L. / Bluet, J. M. / El Harrouni, I. / Guillot, G. et al. | 2003
- 353
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Raman Imaging Analysis of SiC WafersMermoux, M. / Crisci, A. / Baillet, F. et al. | 2003
- 357
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Simple Method for Mapping Optical Defects in Insulating Silicon Carbide WafersMier, M. / Boeckl, J. / Roth, M. / Balkas, C. / Nelson, M. et al. | 2003
- 361
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Non-Destructive SiC Wafer Evaluation Based on an Optical Stress TechniqueMa, X. / Parker, M. / Ma, Y. / Kubota, T. / Sudarshan, T. S. et al. | 2003
- 365
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Electrical and Optical Characterization of SiCPensl, G. / Schmid, F. / Ciobanu, F. / Laube, M. / Reshanov, S. A. / Schulze, N. / Semmelroth, K. / Nagasawa, H. / Schoner, A. / Wagner, G. et al. | 2003
- 371
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Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiCDavid, M. L. / Alfieri, G. / Monakhov, E. V. / Hallen, A. / Barbot, J. F. / Svensson, B. G. et al. | 2003
- 375
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Activation Study of Implanted N^+ in 6H-SiC by Scanning Capacitance MicroscopyRaineri, V. / Calcagno, L. / Giannazzo, F. / Goghero, D. / Musumeci, F. / Roccaforte, F. / La Via, F. et al. | 2003
- 379
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Majority Traps Observed in H^+- or He^+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient SpectroscopyReshanov, S. A. / Klettke, O. / Pensl, G. et al. | 2003
- 383
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On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiCvan Wyk, E. / Leitch, A. W. R. et al. | 2003
- 387
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High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial LayersSchoner, A. / Fujihira, K. / Kimoto, T. / Matsunami, H. et al. | 2003
- 391
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Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering ProcessesVelmre, E. / Udal, A. et al. | 2003
- 395
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Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-CrystallizationHeera, V. / Madhusoodanan, K. N. / Mucklich, A. / Panknin, D. / Skorupa, W. et al. | 2003
- 399
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Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ DopingTerziyska, P. / Pernot, J. / Contreras, S. / Robert, J. L. / Di Cioccio, L. / Billon, T. et al. | 2003
- 403
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From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer StacksPernot, J. / Camassel, J. / Peyre, H. / Contreras, S. / Robert, J. L. et al. | 2003
- 407
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Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and SimulationBikbajevas, V. / Grivickas, V. / Stolzer, M. / Velmre, E. / Udal, A. / Grivickas, P. / Syvajarvi, M. / Yakimova, R. et al. | 2003
- 411
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Parameters of Electron-Hole Scattering in Silicon CarbideMnatsakanov, T. T. / Levinshtein, M. E. / Ivanov, P. A. / Tandoev, A. G. / Yurkov, S. N. / Palmour, J. W. / Singh, R. et al. | 2003
- 415
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Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient SpectroscopyLeveque, P. / Martin, D. / Svensson, B. G. / Hallen, A. et al. | 2003
- 419
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Electrical Characterization of Ni/Porous SiC/n-SiC StructureGrekov, A. / Soloviev, S. / Das, T. / Sudarshan, T. S. et al. | 2003
- 423
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Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiCStorasta, L. / Magnusson, B. / Henry, A. / Linnarsson, M. K. / Bergman, J. P. / Janzen, E. et al. | 2003
- 427
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Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC RegionLebedev, A. A. / Strel chuk, A. M. / Savkina, N. S. / Bogdanova, E. V. / Tregubova, A. S. / Kuznetsov, A. N. / Davydov, D. V. et al. | 2003
- 431
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Mapping on Bulk and Epitaxy Layer 4H-SiCOno, R. / Yatsuo, T. / Okushi, H. / Arai, K. et al. | 2003
- 435
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Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping SubstratesOno, R. / Fujimaki, M. / Hon-Joo, N. / Tanimoto, S. / Shinohe, T. / Yatsuo, T. / Okushi, H. / Arai, K. et al. | 2003
- 439
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Electron-Induced Damage Effects in 4H-SiC Schottky DiodesCastaldini, A. / Cavallini, A. / Nava, F. / Fuochi, P. G. / Vanni, P. et al. | 2003
- 443
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Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device SimulationHatakeyama, T. / Watanabe, T. / Kushibe, M. / Kojima, K. / Imai, S. / Suzuki, T. / Shinohe, T. / Tanaka, T. / Arai, K. et al. | 2003
- 447
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Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiCMatsuura, H. / Sugiyama, K. / Nishikawa, K. / Nagata, T. / Fukunaga, N. et al. | 2003
- 451
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Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin FilmsPham, H. T. M. / Akkaya, T. / de Boer, C. R. / Sarro, P. M. et al. | 2003
- 455
-
Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky DiodesScaltrito, L. / Porro, S. / Giorgis, F. / Mandracci, P. / Cocuzza, M. / Pirri, C. F. / Ricciardi, C. / Ferrero, S. / Richieri, G. / Sgorlon, C. et al. | 2003
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Electrical Characterization of Erbium-Implanted 4H-SiC EpilayersReshanov, S. A. / Klettke, O. / Pensl, G. / Choyke, W. J. et al. | 2003
- 463
-
Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD ParametersPintilie, I. / Pintilie, L. / Irmscher, K. / Thomas, B. et al. | 2003
- 467
-
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy IonsKalinina, E. / Kholujanov, G. / Onushkin, G. / Davydov, D. / Strel chuk, A. / Zubrilov, A. / Hallen, A. / Konstantinov, A. / Skuratov, V. / Stano, J. et al. | 2003
- 471
-
Identification and Annealing of Common Intrinsic Defect CentersBockstedte, M. / Heid, M. / Mattausch, A. / Pankratov, O. et al. | 2003
- 477
-
Polytype-Dependent Vacancy Annealing Studied by Positron AnnihilationKawasuso, A. / Yoshikawa, M. / Maekawa, M. / Itoh, H. / Chiba, T. / Redmann, F. / Krause-Rehberg, R. / Weidner, M. / Frank, T. / Pensl, G. et al. | 2003
- 481
-
Nitrogen-Vacancy Complexes in SiC - Final Annealing Products of the Silicon Vacancy?Gerstmann, U. / Rauls, E. / Frauenheim, T. / Overhof, H. et al. | 2003
- 487
-
A Deep Erbium-Related Bandgap State in 4H Silicon CarbidePasold, G. / Albrecht, F. / Grillenberger, J. / Grossner, U. / Hulsen, C. / Sielemann, R. / Witthuhn, W. et al. | 2003
- 491
-
Theoretical Study of Antisite Aggregation in alpha-SiCRauls, E. / Gali, A. / Deak, P. / Frauenheim, T. et al. | 2003
- 495
-
EPR Studies of Interface Defects in n-Type 6H-SiC/SiO~2 Using Porous SiCvon Bardeleben, H. J. / Cantin, J. L. / Mynbaeva, M. / Saddow, S. E. et al. | 2003
- 499
-
Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiCKalabukhova, E. N. / Lukin, S. N. / Mitchel, W. C. et al. | 2003
- 503
-
Phosphorus-Related Shallow and Deep Defects in 6H-SiCBaranov, P. G. / Ilyin, I. V. / Mokhov, E. N. / von Bardeleben, H. J. / Cantin, J. L. et al. | 2003
- 507
-
EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:Vvon Bardeleben, H. J. / Cantin, J. L. / Reshanov, S. A. / Rastegaev, V. P. et al. | 2003
- 511
-
Calculation of Hyperfine Constants of Defects in 4H-SiCGali, A. / Deak, P. / Son, N. T. / Janzen, E. / von Bardeleben, H. J. / Monge, J.-L. et al. | 2003
- 515
-
A Simple Model of 3d Impurities in Cubic Silicon CarbideParfenova, I. I. / Yuryeva, E. I. / Reshanov, S. A. / Rastegaev, V. P. / Ivanovskii, A. L. et al. | 2003
- 519
-
Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon CarbideIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2003
- 523
-
A Shallow Acceptor Complex in 4H-SiC: Al~S~iN~CAl~S~iDeak, P. / Aradi, B. / Gali, A. / Gerstmann, U. / Choyke, W. J. et al. | 2003
- 527
-
Electronic Structure of Twin Boundaries in 3C-SiC, Si and DiamondIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2003
- 531
-
Electronic Properties of Stacking Faults in 15R-SiCIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2003
- 535
-
A Cause for SiC/SiO~2 Interface States: the Site Selection of Oxygen in SiCDeak, P. / Gali, A. / Hajnal, Z. / Frauenheim, T. / Son, N. T. / Janzen, E. / Choyke, W. J. / Ordejon, P. et al. | 2003
- 539
-
Angle-Resolved Studies of SiO~2/SiC SamplesJohansson, L. I. / Virojanadara, C. / Eickhoff, T. / Drube, W. et al. | 2003
- 543
-
Positron Annihilation Studies of Defects at the SiO~2/SiC InterfaceDekker, J. / Saarinen, K. / Olafsson, H. O. / Sveinbjornsson, E. O. et al. | 2003
- 547
-
A Study of the Shallow Electron Traps at the 4H-SiC/SiO~2 InterfaceOlafsson, H. O. / Sveinbjornsson, E. O. / Rudenko, T. E. / Kilchytska, V. I. / Tyagulski, I. P. / Osiyuk, I. N. et al. | 2003
- 551
-
Traps at the Interface of 3C-SiC/SiO~2-MOS-StructuresCiobanu, F. / Pensl, G. / Nagasawa, H. / Schoner, A. / Dimitrijev, S. / Cheong, K.-Y. / Afanas ev, V. V. / Wagner, G. et al. | 2003
- 555
-
Study of the Wet Re-Oxidation Annealing of SiO~2/4H-SiC (0001) Interface Properties by AR-XPS MeasurementsEkoue, A. / Renault, O. / Billon, T. / Di Cioccio, L. / Guillot, G. et al. | 2003
- 559
-
Structural Defects at SiO~2/SiC Interfaces Detected by Positron AnnihilationMaekawa, M. / Kawasuso, A. / Yoshikawa, M. / Itoh, H. et al. | 2003
- 563
-
Reduction of Interface Trapped Density of SiO~2/4H-SiC by Oxidation of Atomic OxygenKosugi, R. / Fukuda, K. / Arai, K. et al. | 2003
- 567
-
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000&unknown;) Face Using H~2 Post-Oxidation AnnealingFukuda, K. / Senzaki, J. / Kojima, K. / Suzuki, T. et al. | 2003
- 571
-
Cubic SiC Surface Structure Studied by X-Ray DiffractionD Angelo, M. / Enriquez, H. / Aristov, V. Y. / Soukiassian, P. / Renaud, G. / Barbier, A. / Chiang, S. / Semond, F. / Di Cioccio, L. / Billon, T. et al. | 2003
- 575
-
Adsorption of Toluene on Si(100) from First PrinciplesCostanzo, F. / Silvestrelli, P. / Sbraccia, C. / Ancilotto, F. et al. | 2003
- 579
-
Atomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction StudyTejeda, A. / Michel, E. G. / Dunham, D. / Soukiassian, P. / Denlinger, J. D. / Rotenberg, E. / Hurych, Z. D. / Tonner, B. et al. | 2003
- 583
-
Effects of Initial Nitridation on the Characteristics of SiC-SiO~2 InterfacesCheong, K.-Y. / Dimitrijev, S. / Han, J. et al. | 2003
- 587
-
Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated SurfacesRodriguez, N. / D Angelo, M. / Aristov, V. Y. / Soukiassian, P. / Lescuras, A. / Croti, C. / Pedio, M. / Perfetti, P. et al. | 2003
- 591
-
Modelling the Formation of Nano-Sized SiC on SiSafonov, K. L. / Schmidt, A. A. / Trushin, Y. V. / Kulikov, D. V. / Cimalla, V. / Pezoldt, J. et al. | 2003
- 595
-
Nanostructure Formation on a Surface of 6H-SiC by Laser RadiationMedvid, A. / Fedorenko, L. / Lytvyn, P. / Yusupov, N. et al. | 2003
- 599
-
Theoretical Investigation of Adsorption of N-Containing Species at SiC(0001) SurfacesOlander, J. / Larsson, K. et al. | 2003
- 605
-
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser AnnealingTanaka, Y. / Tanoue, H. / Arai, K. et al. | 2003
- 609
-
Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiCBauer, A. J. / Rambach, M. / Frey, L. / Weiss, R. / Rupp, R. / Friedrichs, P. / Schorner, R. / Peters, D. et al. | 2003
- 613
-
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11&unknown;0) FaceSenzaki, J. / Kojima, K. / Suzuki, T. / Fukuda, K. et al. | 2003
- 617
-
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiCBahng, W. / Song, G. H. / Kim, N. K. / Kim, S. C. / Seo, K. S. / Kim, H. W. / Kim, E. D. et al. | 2003
- 617
-
Damage relaxation pre-activation anneal in Al-implantes SiCBahng, W. / Song, G.H. / Kim, N.K. / Kim, S.C. / Seo, K.S. / Kim, H.W. / Kim, E.D. et al. | 2003
- 621
-
Electrical Characterization of Ion-Implanted n^+/p 6H-SiC DiodesPoggi, A. / Nipoti, R. / Cardinali, G. C. / Moscatelli, F. et al. | 2003
- 625
-
High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiCBattistig, G. / Lopez, J. G. / Khanh, N. Q. / Morilla, Y. / Respaldiza, M. A. / Szilagyi, E. et al. | 2003
- 629
-
SiC Delta-Doped-Layer Structures and DACFETTakahashi, K. / Kusumoto, O. / Uchida, M. / Yamashita, K. / Kitabatake, M. et al. | 2003
- 633
-
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiCOhshima, T. / Uedono, A. / Eryu, O. / Lee, K. K. / Abe, K. / Itoh, H. / Nakashima, K. et al. | 2003
- 637
-
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial LayersKalinina, E. / Kholujanov, G. / Sitnikova, A. / Kossov, V. / Yafaev, R. / Pensl, G. / Reshanov, S. / Hallen, A. / Konstantinov, A. et al. | 2003
- 641
-
Vacancy-Type Defect Distributions of ^1^1B-, ^1^4N- and ^2^7Al-Implanted 4H-SiC Studied by Positron Annihilation SpectroscopyJanson, M. S. / Slotte, J. / Kuznetsov, A. Y. / Saarinen, K. / Hallen, A. et al. | 2003
- 645
-
Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon CarbideZolnai, Z. / Khanh, N. Q. / Lohner, T. / Ster, A. / Kotai, E. / Vickridge, I. / Gyulai, J. et al. | 2003
- 649
-
First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-DopingRurali, R. / Hernandez, E. / Godignon, P. / Rebollo, J. / Ordejon, P. et al. | 2003
- 653
-
Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N^+ and P^+ Ions in 6H-SiCBlanque, S. / Perez, R. / Zielinski, M. / Pernot, J. / Mestres, N. / Pascual, J. / Godignon, P. / Camassel, J. et al. | 2003
- 657
-
Porous SiC: New Applications through In- and Out- Dopant DiffusionMynbaeva, M. / Kuznetsov, N. / Lavrent ev, A. / Mynbaev, K. / Wolan, J. T. / Grayson, B. / Ivantsov, V. / Syrkin, A. / Fomin, A. / Saddow, S. E. et al. | 2003
- 661
-
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETsSong, G. H. / Bahng, W. / Kim, N. K. / Kim, S. C. / Seo, K. S. / Kim, E. D. et al. | 2003
- 665
-
Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH SolutionsKato, M. / Ichimura, M. / Arai, E. / Ramasamy, P. et al. | 2003
- 669
-
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETsKiritani, N. / Hoshi, M. / Tanimoto, S. / Adachi, K. / Nishizawa, S.-i. / Yatsuo, T. / Okushi, H. / Arai, K. et al. | 2003
- 673
-
Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two-Dimensional Analysis of TLM DataMoscatelli, F. / Scorzoni, A. / Poggi, A. / Cardinali, G. C. / Nipoti, R. et al. | 2003
- 677
-
Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaNTanuma, N. / Tanizaki, H. / Yokokura, S. / Matsui, T. / Hashiguchi, S. / Sikula, J. / Tacano, M. et al. | 2003
- 681
-
Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiCSamiji, M. E. / Venter, A. / Leitch, A. W. R. et al. | 2003
- 685
-
Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" ArrangementIzumi, S. / Fujisawa, H. / Tawara, T. / Ueno, K. / Hiraoka, M. et al. | 2003
- 689
-
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky DiodesPlank, N. O. V. / Jiang, L. / Gundlach, A. M. / Cheung, R. et al. | 2003
- 693
-
Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiCCamara, N. / Constantinidis, G. / Zekentes, K. et al. | 2003
- 697
-
Diffusion-Welded Al Contacts to p-Type SiCKorolkov, O. / Rang, T. / Syrkin, A. / Dmitriev, V. et al. | 2003
- 701
-
Thermal Etching of 6H-SiC (11&unknown;0) Substrate SurfaceNishiguchi, T. / Ohshima, S. / Nishino, S. et al. | 2003
- 705
-
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000&unknown;), (1&unknown;00) and (1&unknown;10) Faces Measured by I-V, C-V and Internal PhotoemissionShigiltchoff, O. / Bai, S. / Devaty, R. P. / Choyke, W. J. / Kimoto, T. / Hobgood, D. / Neudeck, P. G. / Porter, L. M. et al. | 2003
- 709
-
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC LayersKasamakova-Kolaklieva, L. / Yakimova, R. / Kakanakov, R. / Kakanakova-Georgieva, A. / Syvajarvi, M. / Janzen, E. et al. | 2003
- 713
-
Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal StabilityKassamakova-Kolaklieva, L. / Kakanakov, R. / Cimalla, V. / Hristeva, N. / Lepoeva, G. / Kuznetsov, N. / Zekentes, K. et al. | 2003
- 717
-
Surface Structure of Electrochemically Etched alpha-SiC SubstratesMikami, H. / Umetani, A. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2003
- 721
-
Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?Calcagno, L. / Zanetti, E. / La Via, F. / Roccaforte, F. / Raineri, V. / Libertino, S. / Giannazzo, F. / Mauceri, M. / Musumeci, P. et al. | 2003
- 725
-
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication ProcessTanimoto, S. / Kiritani, N. / Hoshi, M. / Okushi, H. / Arai, K. et al. | 2003
- 731
-
Influence of Material Properties on Wide-Bandgap Microwave Power Device CharacteristicsMorvan, E. / Kerlain, A. / Dua, C. / Brylinski, C. et al. | 2003
- 737
-
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating SubstratesEriksson, J. / Rorsman, N. / Zirath, H. / Henry, A. / Magnusson, B. / Ellison, A. / Janzen, E. et al. | 2003
- 741
-
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer LayerEriksson, J. / Rorsman, N. / Zirath, H. et al. | 2003
- 745
-
RF Characteristics of Short-Channel SiC MESFETsHonda, H. / Ogata, M. / Sawazaki, H. / Ono, S. / Arai, M. et al. | 2003
- 749
-
Passivation Effect on Channel Recessed 4H-SiC MESFETsCha, H.-Y. / Thomas, C. I. / Koley, G. / Eastman, L. F. / Spencer, M. G. et al. | 2003
- 753
-
4H-SiC Lateral RESURF MOSFET with a Buried Channel StructureSuzuki, S. / Harada, S. / Yatsuo, T. / Kosugi, R. / Senzaki, J. / Fukuda, K. et al. | 2003
- 757
-
Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiCBanerjee, S. / Chow, T. P. / Gutmann, R. J. et al. | 2003
- 761
-
Modelling of Radiation Response of p-Channel SiC MOSFETsLee, K. K. / Ohshima, T. / Itoh, H. et al. | 2003
- 765
-
Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFETOhtsuka, K. / Tarui, Y. / Imaizumi, M. / Sugimoto, H. / Takami, T. / Ozeki, T. et al. | 2003
- 769
-
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial ApplicationsPeters, D. / Schorner, R. / Friedrichs, P. / Stephani, D. et al. | 2003
- 773
-
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETsKoo, S.-M. / Domeij, M. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E. et al. | 2003
- 777
-
Optimisation of a 4H-SiC Enhancement Mode Power JFETHorsfall, A. B. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. et al. | 2003
- 781
-
Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar TransistorsLiu, W. / Danielsson, E. / Zetterling, C.-M. / Ostling, M. et al. | 2003
- 785
-
Power Amplification in UHF Band Using SiC RF Power BJTsAgarwal, A. / Capell, C. / Phan, B. / Milligan, J. / Palmour, J. W. / Stambaugh, J. / Bartlow, H. / Brewer, K. et al. | 2003
- 789
-
Demonstration of Monolithic Darlington Transistors in 4H-SiCTang, Y. / Chow, T. P. et al. | 2003
- 793
-
High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Omega ConfigurationFriedrichs, P. / Mitlehner, H. / Schorner, R. / Dohnke, K. O. / Stephani, D. et al. | 2003
- 793
-
High-voltage modular switch based on SiC VJFETs - first results for a fast 4.5kV/1.2 Ohm configurationFriedrichs, P. / Mitlehner, H. / Schörner, R. / Dohnke, K.O. / Stephani, D. et al. | 2003
- 797
-
Design and Technology Considerations for a RF BJT in SiCBakowski, M. / Ericsson, P. / Harris, C. / Konstantinov, A. / Savage, S. / Schoner, A. et al. | 2003
- 801
-
Analysis of Unipolar and Bipolar Cascoded Switches with MOS GateBakowski, M. et al. | 2003
- 805
-
SiC Power Devices: How to be Competitive towards Si-Based Solutions?Rupp, R. / Zverev, I. et al. | 2003
- 813
-
SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First DemonstrationsLetertre, F. / Daval, N. / Templier, F. / Bano, E. / Planson, D. / Di Cioccio, L. / Jalaguier, E. / Bluet, J. M. / Billon, T. / Madar, R. et al. | 2003
- 819
-
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar StructureRoccaforte, F. / La Via, F. / La Magna, A. / Di Franco, S. / Raineri, V. et al. | 2003
- 823
-
Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier DiodesBlasciuc-Dimitriu, C. / Horsfall, A. B. / Vassilevski, K. V. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. et al. | 2003
- 827
-
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental ResultsLa Via, F. / Roccaforte, F. / Di Franco, S. / Raineri, V. / Moscatelli, F. / Scorzoni, A. / Cardinali, G. C. et al. | 2003
- 831
-
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling ProcessHatakeyama, T. / Kushibe, M. / Watanabe, T. / Imai, S. / Shinohe, T. et al. | 2003
- 835
-
Characterization of the Forward Conduction of 4H-SiC Planar Junction DiodeOhyanagi, T. / Ohno, T. / Amemiya, K. / Watanabe, A. et al. | 2003
- 839
-
The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current OperationFelsl, H. P. / Wachutka, G. / Rupp, R. et al. | 2003
- 843
-
1kV 4H-SiC JBS Rectifiers Fabricated Using an AIN Capped AnnealZhu, L. / Shanbhag, M. / Chow, T. P. / Jones, K. A. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Vispute, R. D. / Venkatesan, T. / Agarwal, A. et al. | 2003
- 847
-
Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron LevelDomeij, M. / Zimmermann, U. / Aberg, D. / Ostermann, J. / Hallen, A. / Ostling, M. et al. | 2003
- 851
-
Optical Switch-On of Silicon Carbide ThyristorLevinshtein, M. E. / Ivanov, P. A. / Agarwal, A. K. / Palmour, J. W. et al. | 2003
- 855
-
Reverse Current Recovery in 4H-SiC Diodes with n- and p-BaseIvanov, P. A. / Grekhov, I. V. / Konstantinov, A. O. / Samsonova, T. P. et al. | 2003
- 859
-
SiC Lateral Super-Junction Diodes Fabricated by Epitaxial GrowthMiura, M. / Nakamura, S.-i. / Suda, J. / Kimoto, T. / Matsunami, H. et al. | 2003
- 863
-
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination ExtensionWang, S. R. / Raynaud, C. / Planson, D. / Lazar, M. / Chante, J. P. et al. | 2003
- 867
-
4H-SiC pn Diode Grown by LPE Method for High-Power ApplicationsKuznetsov, N. / Bauman, D. / Gavrilin, A. / Kassamakova, L. / Kakanakov, R. / Sarov, G. / Cholakova, T. / Zekentes, K. / Dmitriev, V. et al. | 2003
- 871
-
Characterization of a 4H-SiC High Power Density Controlled Current LimiterTournier, D. / Godignon, P. / Montserrat, J. / Planson, D. / Raynaud, C. / Lazar, M. / Chante, J. P. / Sarrus, F. / Bonhomme, C. / de Palma, J. F. et al. | 2003
- 875
-
Forward Dynamic IV Characteristics in Epitaxial and Implanted SiC PiN Power DiodesHillkirk, L. M. / Bakowski, M. et al. | 2003
- 879
-
Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge TerminationSankin, I. / Dufrene, J. B. / Merrett, J. N. / Casady, J. B. et al. | 2003
- 883
-
Fabrication and Characterisation of High-Voltage SiC-ThyristorsZorngiebel, V. / Scharnholz, S. / Spahn, E. / Brosselard, P. / Arssi, N. / Chante, J.-P. / Planson, D. / Raynaud, C. / Spangenberg, B. / Kurz, H. et al. | 2003
- 887
-
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiCAdachi, K. / Omura, I. / Ono, R. / Nishio, J. / Shinohe, T. / Ohashi, H. / Arai, K. et al. | 2003
- 891
-
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage DevicesMihaila, A. / Udrea, F. / Godignon, P. / Trajkovic, T. / Brezeanu, G. / Rebollo, J. / Millan, J. et al. | 2003
- 895
-
To Be "Snappy" or Not - a Comparison of the Transient Behaviours of Bipolar SiC-DiodesBartsch, W. / Schorner, R. / Mitlehner, H. / Dohnke, K. O. / Thomas, B. / Stephani, D. et al. | 2003
- 901
-
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiCLendenmann, H. / Bergman, J. P. / Dahlquist, F. / Hallin, C. et al. | 2003
- 907
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Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking FaultsLindefelt, U. / Iwata, H. / Oberg, S. / Briddon, P. R. et al. | 2003
- 913
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Properties of Different Stacking Faults that Cause Degradation in SiC PiN DiodesJacobson, H. / Bergman, J. P. / Hallin, C. / Tuomi, T. / Janzen, E. et al. | 2003
- 917
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Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC DevicesMalhan, R. K. / Nakamura, H. / Onda, S. / Nakamura, D. / Hara, K. et al. | 2003
- 921
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Stacking Fault - Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: an Ab Initio StudyIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2003
- 925
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Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) FaceKojima, K. / Ohno, T. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishio, J. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T. et al. | 2003
- 929
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Reliability of 4H-SiC p-n Diodes on LPE Grown LayersSarov, G. / Kakanakov, R. / Cholakova, T. / Kassamakova, L. / Hristeva, N. / Lepoeva, G. / Philipova, P. / Kuznetsov, N. / Zekentes, K. et al. | 2003
- 933
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In Situ Studies of Structural Instability in Operating 4H-SiC PiN DiodesGaleckas, A. / Linnros, J. / Pirouz, P. et al. | 2003
- 937
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SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted LayersZimmermann, U. / Osterman, J. / Galeckas, A. / Hallen, A. et al. | 2003
- 941
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SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature RangeBertuccio, G. / Casiraghi, R. / Gatti, E. / Maiocchi, D. / Nava, F. / Canali, C. / Cetronio, A. / Lanzieri, C. et al. | 2003
- 945
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Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETsYano, H. / Maeyama, Y. / Furumoto, Y. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2003
- 949
-
New Tunnel Schottky SiC Devices Using Mixed Conduction CeramicsCerda, J. / Morante, J. R. / Spetz, A. L. et al. | 2003
- 953
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MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue GasesWingbrant, H. / Uneus, L. / Andersson, M. / Cerda, J. / Savage, S. / Svenningstorp, H. / Salomonsson, P. / Ljung, P. / Mattsson, M. / Visser, J. H. et al. | 2003
- 953
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MlSiCFET chemical sensors for applications in exhaust gases and flue gasesWingbrant, H. / Uneus, L. / Andersson, M. / Cerda, J. / Savage, S. / Svenningstorp, H. / Salomonsson, P. / Ljung, P. / Mattsson, M. / Visser, J.H. et al. | 2003
- 957
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Radiation Hardness of Silicon CarbideLebedev, A. A. / Kozlovski, V. V. / Strokan, N. B. / Davydov, D. V. / Ivanov, A. M. / Strel chuk, A. M. / Yakimova, R. et al. | 2003
- 961
-
NO Gas Detection at High Temperature Using Thin-Pt 4H-SiC and 6H-SiC Schottky DiodesKhan, S. A. / de Vasconcelos, E. A. / Uchida, H. / Katsube, T. et al. | 2003
- 965
-
Improved Understanding and Optimization of SiC Nearly Solar Blind UV PhotodiodesBrezeanu, G. / Udrea, F. / Amaratunga, G. / Mihaila, A. / Godignon, P. / Millan, J. / Badila, M. et al. | 2003
- 969
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p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization RadiationIvanov, A. M. / Strokan, N. B. / Davydov, D. V. / Savkina, N. S. / Strelchuk, A. M. / Lebedev, A. A. / Yakimova, R. et al. | 2003
- 975
-
Effect of Tantalum in Sublimation Growth of Aluminum NitrideFurusho, T. / Ohshima, S. / Nishino, S. et al. | 2003
- 979
-
Growth of AIN bulk crystals by sublimation sandwich methodMokhov, E.N. / Roenkov, A.D. / Vodakov, Y.A. / Karpov, S.Y. / Ramm, M.S. / Segal, A.S. / Makarov, Y.A. / Helava, H. et al. | 2003
- 979
-
Growth of AlN Bulk Crystals by Sublimation Sandwich MethodMokhov, E. N. / Roenkov, A. D. / Vodakov, Y. A. / Karpov, S. Y. / Ramm, M. S. / Segal, A. S. / Makarov, Y. A. / Helava, H. et al. | 2003
- 983
-
Seeded PVT Growth of Aluminum Nitride on Silicon CarbideEpelbaum, B. M. / Bickermann, M. / Winnacker, A. et al. | 2003
- 987
-
Growth and Characterization of Epitaxial Wurtzite Al~1~-~xIn~xN Thin Films Deposited by UHV Reactive Dual DC Magnetron SputteringSeppanen, T. / Radnoczi, G. Z. / Tungasmita, S. / Hultman, L. / Birch, J. et al. | 2003
- 991
-
Implementation of Hot-Wall MOCVD in the Growth of High-Quality GaN on SiCKakanakova-Georgieva, A. / Forsberg, U. / Hallin, C. / Persson, P. O. A. / Storasta, L. / Pozina, G. / Birch, J. / Hultman, L. / Janzen, E. et al. | 2003
- 995
-
Properties of AlN Layers Grown by Sublimation EpitaxyBeshkova, M. / Zakhariev, Z. / Birch, J. / Kakanakova, A. / Yakimova, R. et al. | 2003
- 999
-
Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam EpitaxyToth, L. / Pecz, B. / Czigany, Z. / Amimer, K. / Georgakilas, A. et al. | 2003
- 1003
-
Structural Study of GaN Layers Grown on Carbonized Si(111) SubstratesMorales, F. M. / Ponce, A. / Molina, S. I. / Araujo, D. / Garcia, R. / Ristic, J. / Sanchez-Garcia, M.-A. / Calleja, E. / Cimalla, V. / Pezoldt, J. et al. | 2003