2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes (English)
- New search for: Li, Y.
- New search for: Fursin, L.
- New search for: Wu, J.
- New search for: Alexandrov, P.
- New search for: Zhao, J. H.
- New search for: Li, Y.
- New search for: Fursin, L.
- New search for: Wu, J.
- New search for: Alexandrov, P.
- New search for: Zhao, J. H.
- New search for: Madar, R.
- New search for: Camassel, J.
- New search for: Blanquet, Elisabeth
In:
International Conference on Silicon Carbide and Related Materials; ICSCRM2003
;
1097-1100
;
2004
-
ISBN:
-
ISSN:
- Conference paper / Print
-
Title:2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
-
Contributors:Li, Y. ( author ) / Fursin, L. ( author ) / Wu, J. ( author ) / Alexandrov, P. ( author ) / Zhao, J. H. ( author ) / Madar, R. / Camassel, J. / Blanquet, Elisabeth
-
Conference:10th, International Conference on Silicon Carbide and Related Materials; ICSCRM2003 ; 2003 ; Lyon, France
-
Published in:MATERIALS SCIENCE FORUM ; 457-460 ; 1097-1100
-
Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Uetikon-Zuerich, Switzerland , Great Britain
-
Publication date:2004-01-01
-
Size:4 pages
-
ISBN:
-
ISSN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Silicon Carbide Crystal and Substrate Technology: A Survey of Recent AdvancesHobgood, H. M. / Brady, M. F. / Calus, M. R. / Jenny, J. R. / Leonard, R. T. / Malta, D. P. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Glass, R. C. et al. | 2004
- 9
-
SiC Crystal Growth by HTCVDEllison, A. / Magnusson, B. / Sundqvist, B. / Pozina, G. / Bergman, J. P. / Janzen, E. / Vehanen, A. et al. | 2004
- 15
-
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductorsvan de Walle, C. G. et al. | 2004
- 21
-
Possibility of Power Electronics Paradigm Shift with Wide Band Gap SemiconductorsOhashi, H. et al. | 2004
- 29
-
High-quality SiC bulk single crystall growth based on simulation and experimentNishizawa, S.I. / Kato, T. / Kitou, Y. / Oyanagi, N. / Hirose, F. / Yamaguchi, H. / Bahng, W. / Arai, K. et al. | 2004
- 29
-
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and ExperimentNishizawa, S. I. / Kato, T. / Kitou, Y. / Oyanagi, N. / Hirose, F. / Yamaguchi, H. / Bahng, W. / Arai, K. et al. | 2004
- 35
-
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave DevicesJenny, J. R. / Malta, D. P. / Calus, M. R. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Hobgood, H. M. / Glass, R. C. / Carter, C. H. et al. | 2004
- 41
-
Large Diameter 4H-SiC Substrates for Commercial Power ApplicationsPowell, A. R. / Leonard, R. T. / Brady, M. F. / Muller, S. G. / Tsvetkov, V. F. / Trussell, R. / Sumakeris, J. J. / Hobgood, H. M. / Burk, A. A. / Glass, R. C. et al. | 2004
- 47
-
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth TechniqueNishiguchi, T. / Nakamura, M. / Isshiki, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 51
-
Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single CrystalsWang, S. / Sanchez, E. / Kopec, A. / Zhang, M. / Hernandez, O. et al. | 2004
- 55
-
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon CarbideWellmann, P. J. / Herro, Z. / Sakwe, S. A. / Masri, P. / Bogdanov, M. / Karpov, S. / Kulik, A. / Ramm, M. / Makarov, Y. et al. | 2004
- 59
-
Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and CarbonSevast yanov, V. G. / Ezhov, Y. S. / Simonenko, E. P. / Kuznetsov, N. T. et al. | 2004
- 63
-
Faceted Growth of SiC Bulk CrystalsMatukov, I. D. / Kalinin, D. S. / Bogdanov, M. V. / Karpov, S. Y. / Ofengeim, D. K. / Ramm, M. S. / Barash, J. S. / Mokhov, E. N. / Roenkov, A. D. / Vodakov, Y. A. et al. | 2004
- 67
-
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC GrowthKulik, A. V. / Bogdanov, M. V. / Karpov, S. Y. / Ramm, M. S. / Makarov, Y. N. et al. | 2004
- 71
-
Free Growth of 4H-SiC by Sublimation MethodDedulle, J. M. / Anikin, M. / Pons, M. / Blanquet, E. / Pisch, A. / Madar, R. / Bernard, C. et al. | 2004
- 75
-
Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC CrystalsAnderson, T. A. / Barrett, D. L. / Chen, J. / Elkington, W. T. / Emorhokpor, E. / Gupta, A. / Johnson, C. J. / Hopkins, R. H. / Martin, C. / Kerr, T. et al. | 2004
- 79
-
Radial Expansion Growth of SiC Single Crystals with Higher Crystal QualityFujimoto, T. / Tsuge, H. / Katsuno, M. / Ohtani, N. / Yashiro, H. / Nakabayashi, M. et al. | 2004
- 83
-
Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (1120) Seed CrystalKatsuno, M. / Ohtani, N. / Fujimoto, T. / Yashiro, H. et al. | 2004
- 87
-
Growth of Bulk SiC by Halide Chemical Vapor DepositionFanton, M. / Skowronski, M. / Snyder, D. / Chung, H. J. / Nigam, S. / Weiland, B. / Huh, S. W. et al. | 2004
- 91
-
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport MethodChaussende, D. / Balloud, C. / Auvray, L. / Baillet, F. / Zielinski, M. / Juillaguet, S. / Mermoux, M. / Pernot, E. / Camassel, J. / Pons, M. et al. | 2004
- 95
-
Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiCHerro, Z. G. / Epelbaum, B. M. / Bickermann, M. / Masri, P. / Winnacker, A. et al. | 2004
- 99
-
Large Diameter and Long Length Growth of SiC Single CrystalKato, T. / Ohno, T. / Hirose, F. / Oyanagi, N. / Nishizawa, S. / Arai, K. et al. | 2004
- 103
-
Effect of Crucible Design on the Shape and the Quality in 6H-SiC Crystals Grown by Physical Vapor TransportUm, M. Y. / Song, H. K. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 107
-
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect AnalysisFurusho, T. / Takagi, H. / Ota, S. / Shiomi, H. / Nishino, S. et al. | 2004
- 111
-
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon CarbideHerro, Z. G. / Epelbaum, B. M. / Bickermann, M. / Masri, P. / Seitz, C. / Magerl, A. / Winnacker, A. et al. | 2004
- 115
-
High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source MaterialsOta, S. / Furusho, T. / Takagi, H. / Oshima, S. / Nishino, S. et al. | 2004
- 119
-
Flux Growth of SiC Crystals from Eutectic Melt SiC-B~4CEpelbaum, B. M. / Gurzhiyants, P. A. / Herro, Z. / Bickermann, M. / Winnacker, A. et al. | 2004
- 123
-
Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal SolventKusunoki, K. / Munetoh, S. / Kamei, K. / Hasebe, M. / Ujihara, T. / Nakajima, K. et al. | 2004
- 127
-
The Effect of a Periodic Movement on the Die of the Bottom Line of the Melt/Gas Meniscus in the Case of Silicon Filaments Grown from the Melt in a Vacuum by Edge-Defined Film-Fed Growth MethodBraescu, L. / Balint, A. M. / Balint, S. et al. | 2004
- 131
-
Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle PrecursorsYamada, Y. / Nishizawa, S. / Nakashima, S. / Arai, K. et al. | 2004
- 135
-
Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth MethodAuvray, L. / Chaussende, D. / Baillet, F. / Charpentier, L. / Pons, M. / Madar, R. et al. | 2004
- 139
-
In Situ SiC Feeding by Chemical Vapor Deposition for Bulk GrowthCharpentier, L. / Baillet, F. / Chaussende, D. / Auvray, L. / Pons, M. / Pernot, E. / Madar, R. et al. | 2004
- 143
-
Stable Parameter Range for 3C-SiC Sublimation Growth on GraphiteWollweber, J. / Mantzari, A. / Polychroniadis, E. K. / Balloud, C. / Freudenberg, A. / Nitschke, R. / Camassel, J. et al. | 2004
- 147
-
Microstructure of Cubic SiC Grown by the Modified Lely-MethodNerding, M. / Semmelroth, K. / Pensl, G. / Nagasawa, H. / Strunk, H. P. et al. | 2004
- 151
-
Growth of 3C-SiC Bulk Material by the Modified Lely MethodSemmelroth, K. / Krieger, M. / Pensl, G. / Nagasawa, H. / Pusche, R. / Hundhausen, M. / Ley, L. / Nerding, M. / Strunk, H. P. et al. | 2004
- 157
-
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction TechniquesHuang, X. R. / Dudley, M. / Cho, W. / Okojie, R. S. / Neudeck, P. G. et al. | 2004
- 163
-
Surface Mechanisms in Homoepitaxial Growth on alpha-SiC{0001}-Vicinal FacesNakamura, S. I. / Kimoto, T. / Matsunami, H. et al. | 2004
- 169
-
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and CantileversNeudeck, P. G. / Powell, J. A. / Trunek, A. J. / Spry, D. J. et al. | 2004
- 175
-
Flash Lamp Supported Deposition of 3C-SiC (FLASiC) - a Promising Technique to Produce High Quality Cubic SiC LayersSkorupa, W. / Panknin, D. / Anwand, W. / Voelskow, M. / Ferro, G. / Monteil, Y. / Leycuras, A. / Pezoldt, J. / McMahon, R. / Smith, M. et al. | 2004
- 181
-
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage ApplicationsThomas, B. / Bartsch, W. / Stein, R. / Schorner, R. / Stephani, D. et al. | 2004
- 185
-
Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature MaskLi, C. / Seiler, J. / Bhat, I. / Chow, T. P. et al. | 2004
- 189
-
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor DepositionChen, Y. / Kimoto, T. / Takeuchi, Y. / Malhan, R. K. / Matsunami, H. et al. | 2004
- 193
-
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVDHallin, C. / Wahab, Q. / Ivanov, I. / Bergman, P. / Janzen, E. et al. | 2004
- 197
-
High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(0001) FaceDanno, K. / Kimoto, T. / Matsunami, H. et al. | 2004
- 201
-
Growth of Device Quality 4H-SiC High Velocity EpitaxyYakimova, R. / Syvajarvi, M. / Ciechonski, R. R. / Wahab, Q. et al. | 2004
- 205
-
Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor DepositionFujiwara, H. / Danno, K. / Kimoto, T. / Tojo, T. / Matsunami, H. et al. | 2004
- 209
-
4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor DepositionKojima, K. / Takahashi, T. / Ishida, Y. / Kuroda, S. / Okumura, H. / Arai, K. et al. | 2004
- 213
-
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate GrowthIshida, Y. / Takahashi, T. / Kojima, K. / Okumura, H. / Arai, K. / Yoshida, S. et al. | 2004
- 217
-
Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor SystemsSartel, C. / Balloud, C. / Souliere, V. / Juillaguet, S. / Dazord, J. / Monteil, Y. / Camassel, J. / Rushworth, S. et al. | 2004
- 221
-
Growth of Homoepitaxial Films on 4H-SiC(1120)and 8^o Off-Axis 4H-SiC(0001) Substrates and their CharacterizationBishop, S. M. / Preble, E. A. / Hallin, C. / Henry, A. / Storasta, L. / Jacobson, H. / Wagner, B. P. / Reitmeier, Z. J. / Janzen, E. / Davis, R. F. et al. | 2004
- 225
-
Uniformity Improvement in SiC Epitaxial Growth by using Si-CondensationHarada, S. / Nakayama, K. / Sasaki, M. / Shiomi, H. et al. | 2004
- 229
-
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut DirectionsTsuchida, H. / Kamata, I. / Izumi, S. / Tawara, T. / Izumi, K. et al. | 2004
- 233
-
Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane PrecursorSong, H. K. / Um, M. Y. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 237
-
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC SubstratesBlanc, C. / Sartel, C. / Souliere, V. / Juillaguet, S. / Monteil, Y. / Camassel, J. et al. | 2004
- 241
-
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned SubstrateJacquier, C. / Ferro, G. / Godignon, P. / Montserrat, J. / Dezellus, O. / Monteil, Y. et al. | 2004
- 245
-
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid MechanismAbdou, F. / Jacquier, C. / Ferro, G. / Cauwet, F. / Monteil, Y. et al. | 2004
- 249
-
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in VacuumDavydov, S. Y. / Savkina, N. S. / Lebedev, A. A. / Syvajarvi, M. / Yakimova, R. et al. | 2004
- 253
-
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour InfiltrationKulik, V. I. / Kulik, A. V. / Ramm, M. S. / Makarov, Y. N. et al. | 2004
- 257
-
Pendeo Epitaxial Growth of 3C-SiC on Si SubstratesShoji, A. / Okui, Y. / Nishiguchi, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 261
-
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended DefectsTrunek, A. J. / Neudeck, P. G. / Powell, J. A. / Spry, D. J. et al. | 2004
- 265
-
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) SubstratesChassagne, T. / Ferro, G. / Haas, H. / Leycuras, A. / Mank, H. / Monteil, Y. et al. | 2004
- 269
-
Growth of SiC Films using TetraethylsilaneKubo, N. / Kawase, T. / Asahina, S. / Kanayama, N. / Tsuda, H. / Moritani, A. / Kitahara, K. et al. | 2004
- 273
-
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"Chassagne, T. / Leycuras, A. / Balloud, C. / Arcade, P. / Peyre, H. / Juillaguet, S. et al. | 2004
- 277
-
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-EpitaxyBustarret, E. / Araujo, D. / Mendez, D. / Morales, F. M. / Pacheco, F. J. / Molina, S. I. / Rochat, N. / Ferro, G. / Monteil, Y. et al. | 2004
- 277
-
Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxyBustarret, E. / Araujo, D. / Mendez, D. / Morales, F.M. / Pacheco, F.J. / Molina, S.I. / Rochat, N. / Ferro, G. / Monteil, Y. et al. | 2004
- 281
-
Potential of HMDS/C~3H~8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)Ferro, G. / Camassel, J. / Juillaguet, S. / Balloud, C. / Polychroniadis, E. K. / Stoimenos, Y. / Seigle-Ferrand, P. / Dazord, J. / Monteil, Y. / Rushworth, S. A. et al. | 2004
- 285
-
Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor DepositionNishiguchi, T. / Mukai, Y. / Nakamura, M. / Nishio, K. / Isshiki, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 289
-
Crystal Growth of 6H-SiC(0114) on 3C-SiC(001) Substrate by Sublimation EpitaxyTakagi, H. / Nishiguchi, T. / Ohta, S. / Furusho, T. / Ohshima, S. / Nishino, S. et al. | 2004
- 293
-
Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBEWeih, P. / Cimalla, V. / Stauden, T. / Kosiba, R. / Spiess, L. / Romanus, H. / Gubisch, M. / Bock, W. / Freitag, T. / Fricke, P. et al. | 2004
- 297
-
Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)Morales, F. M. / Zgheib, C. / Molina, S. I. / Araujo, D. / Garcia, R. / Fernandez, C. / Sanz-Hervas, A. / Masri, P. / Weih, P. / Stauden, T. et al. | 2004
- 301
-
Stress Control in 3C-SiC Films Grown on Si(111)Zgheib, C. / Masri, P. / Weih, P. / Ambacher, O. / Pezoldt, J. et al. | 2004
- 305
-
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiCFu, X. A. / Dunning, J. / Zorman, C. A. / Mehregany, M. et al. | 2004
- 309
-
Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas FlowsHernandez, M. J. / Cervera, M. / Piqueras, J. / del Cano, T. / Jimenez, J. et al. | 2004
- 313
-
Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC LayersFerro, G. / Panknin, D. / Stoemenos, J. / Balloud, C. / Camassel, J. / Polychroniadis, E. / Monteil, Y. / Skorupa, W. et al. | 2004
- 317
-
Low Temperature (320^oC) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin FilmsMiyajima, S. / Yamada, A. / Konagai, M. et al. | 2004
- 321
-
Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) SubstrateSeo, S. H. / Lee, T. H. / Park, J. S. / Song, J. S. / Oh, M. H. et al. | 2004
- 325
-
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH~3SiH~3Ikoma, Y. / Ohtani, R. / Motooka, T. et al. | 2004
- 329
-
Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined ReactionShajahan, M. / Mo, Y. H. / Nahm, K. S. et al. | 2004
- 333
-
Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon HeterostructuresSmith, M. / McMahon, R. / Voelskow, M. / Skorupa, W. / Stoemenos, J. et al. | 2004
- 339
-
Structural Defects in SiC Crystals Investigated by High Energy X-Ray DiffractionWeisser, M. / Seitz, C. / Wellmann, P. J. / Hock, R. / Magerl, A. et al. | 2004
- 343
-
TEM Observations of 4H-SiC Deformed at Room Temperature and 150^oCDemenet, J. L. / Milhet, X. / Rabier, J. / Cordier, P. et al. | 2004
- 347
-
TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal SolventKamei, K. / Kusunoki, K. / Munetoh, S. / Ujihara, T. / Nakajima, K. et al. | 2004
- 351
-
Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp ProcessPolychroniadis, E. / Stoemenos, J. / Ferro, G. / Monteil, Y. / Panknin, D. / Skorupa, W. et al. | 2004
- 355
-
Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron MicroscopyIdrissi, H. / Lancin, M. / Regula, G. / Pichaud, B. et al. | 2004
- 359
-
TEM of Dislocations in Forward-Biased 4H-SiC PiN DiodesZhang, M. / Lendenmann, H. / Pirouz, P. et al. | 2004
- 363
-
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer InterfaceArgunova, T. S. / Gutkin, M. Y. / Je, J. H. / Sorokin, L. M. / Mosina, G. N. / Savkina, N. S. / Shuman, V. B. / Lebedev, A. A. et al. | 2004
- 367
-
Structural Transformation of Dislocated Micropipes in Silicon CarbideGutkin, M. Y. / Sheinerman, A. G. / Argunova, T. S. / Mokhov, E. N. / Je, J. H. / Hwu, Y. / Tsai, W. L. et al. | 2004
- 371
-
Deformation of 4H-SiC Single Crystals Oriented for Prism SlipZhang, M. / Hobgood, H. M. / Pirouz, P. et al. | 2004
- 375
-
Inelastic Stress Relaxation in Single Crystal SiC SubstratesOkojie, R. S. et al. | 2004
- 379
-
Dependence of Micropipe Dissociation on Surface OrientationKamata, I. / Tsuchida, H. / Izumi, S. / Tawara, T. / Izumi, K. et al. | 2004
- 383
-
Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic ApproachSemennikov, A. K. / Karpov, S. Y. / Ramm, M. S. / Romanov, A. E. / Makarov, Y. N. et al. | 2004
- 387
-
Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4HChaussende, D. / Chaudouet, P. / Auvray, L. / Pons, M. / Madar, R. et al. | 2004
- 391
-
Reconstruction of Cleaved 6H-SiC SurfacesStarke, U. / Tallarida, M. / Kumar, A. / Horn, K. / Seifarth, O. / Kipp, L. et al. | 2004
- 395
-
The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiCSeyller, T. / Sieber, N. / Emtsev, K. V. / Graupner, R. / Ley, L. / Tadich, A. / James, D. / Riley, J. D. / Leckey, R. C. G. / Polcik, M. et al. | 2004
- 399
-
H-Induced Si-Rich 3C-Si(100) 3x2 Surface MetallizationD Angelo, M. / Enriquez, H. / Silly, M. G. / Derycke, V. / Aristov, V. Y. / Soukiassian, P. / Ottavianni, C. / Pedio, M. / Perfetti, P. et al. | 2004
- 403
-
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-VacuumYasushi, A. / Sano, N. / Kaneko, T. et al. | 2004
- 407
-
SiC Surface Nanostructures Induced by Self-Ordering of Nano-FacetsTanaka, S. / Nakagawa, H. / Suemune, I. et al. | 2004
- 411
-
Dynamic of Laser Ablation in SiCMedvid, A. / Lytvyn, P. et al. | 2004
- 415
-
Tailoring the SiC Subsurface Stacking by the Chemical PotentialStarke, U. / Bernhardt, J. / Schardt, J. / Seubert, A. / Heinz, K. et al. | 2004
- 419
-
Growth of Ultrathin Ag Films on 4H-SiC(0001)Soubatch, S. / Starke, U. et al. | 2004
- 423
-
Wettability Study of SiC in Correlation with XPS AnalysisStambouli, V. / Chaussende, D. / Anikin, M. / Berthome, G. / Thoreau, V. / Joud, J. C. et al. | 2004
- 427
-
Interface Electronic Structures of Transition Metal(Cr, Fe) on 6H(4H)-SiC(0001)Si Face by Soft X-Ray Fluorescence SpectroscopyHirai, M. / Kamezawa, C. / Azatyan, S. / An, Z. / Shinagawa, T. / Fujisawa, T. / Kusaka, M. / Iwami, M. et al. | 2004
- 431
-
Modification of 6H-SiC Surface Defect Structure during Hydrogen EtchingBondokov, R. T. / Tipirneni, N. / Cherednichenko, D. I. / Sudarshan, T. S. et al. | 2004
- 437
-
Defects in High-Purity Semi-Insulating SiCSon, N. T. / Magnusson, B. / Zolnai, Z. / Ellison, A. / Janzen, E. et al. | 2004
- 443
-
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiCGali, A. / Deak, P. / Rauls, E. / Ordejon, P. / Carlsson, F. H. C. / Ivanov, I. G. / Son, N. T. / Janzen, E. / Choyke, W. J. et al. | 2004
- 449
-
A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon InterstitialsMattausch, A. / Bockstedte, M. / Pankratov, O. et al. | 2004
- 453
-
Density Functional Based Modelling of 30^o Partial Dislocations in SiCBlumenau, A. T. / Jones, R. / Oberg, S. / Briddon, P. R. / Frauenheim, T. et al. | 2004
- 457
-
Atomic Computer Simulations of Defect Migration in 3C and 4H-SiCGao, F. / Weber, W. J. / Posselt, M. / Belko, V. et al. | 2004
- 461
-
Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiCCarlos, W. E. / Glaser, E. R. / Shanabrook, B. V. et al. | 2004
- 465
-
EPR and Pulsed ENDOR Study of E16 and Related Defects in 4H-SiCUmeda, T. / Ishitsuka, Y. / Isoya, J. / Morishita, N. / Ohshima, T. / Kamiya, T. et al. | 2004
- 469
-
Investigations of Possible Nitrogen Participation in the Z~1/Z~2 Defect in 4H-SiCStorasta, L. / Henry, A. / Bergman, J. P. / Janzen, E. et al. | 2004
- 473
-
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiCZolnai, Z. / Son, N. T. / Magnusson, B. / Hallin, C. / Janzen, E. et al. | 2004
- 477
-
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect TransistorsMeyer, D. J. / Bohna, N. A. / Lenahan, P. M. / Lelis, A. et al. | 2004
- 481
-
Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiCAlfieri, G. / Monakhov, E. V. / Svensson, B. G. et al. | 2004
- 485
-
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light ExcitationWeidner, M. / Pensl, G. / Nagasawa, H. / Schoner, A. / Ohshima, T. et al. | 2004
- 489
-
Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiCZvanut, M. E. / Konovalov, V. V. / Mitchel, W. C. / Mitchell, W. D. et al. | 2004
- 493
-
Defects in He^+ Irradiated 6H-SiC Probed by DLTS and LTPL MeasurementsRuggiero, A. / Libertino, S. / Mauceri, M. / Reitano, R. / Musumeci, P. / Roccaforte, F. / La Via, F. / Calcagno, L. et al. | 2004
- 497
-
The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V~S~i-H Complexes in SiCKoshka, Y. / Mazzola, M. S. et al. | 2004
- 501
-
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC SubstratesKalabukhova, E. N. / Lukin, S. N. / Savchenko, D. V. / Mitchel, W. C. / Mitchell, W. D. et al. | 2004
- 505
-
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect DistributionKato, M. / Ichimura, M. / Arai, E. / Sumie, S. / Hashizume, H. et al. | 2004
- 509
-
Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC PlasmaOttaviani, L. / Yakimov, E. / Hidalgo, P. / Martinuzzi, S. et al. | 2004
- 513
-
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical SpectroscopyReshanov, S. A. / Schneider, K. / Helbig, R. / Pensl, G. / Nagasawa, H. / Schoner, A. et al. | 2004
- 517
-
Annealing Study on Radiation-Induced Defects in 6H-SiCPinheiro, M. V. B. / Lingner, T. / Caudepon, F. / Greulich-Weber, S. / Spaeth, J. M. et al. | 2004
- 521
-
Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial FilmsOkada, T. / Kimoto, T. / Yamai, K. / Matsunami, H. / Inoko, F. et al. | 2004
- 525
-
Formation of Stacking Faults in Diffused SiC p^+/n^-/n^+ and p^+/p^-/n^+ DiodesSoloviev, S. / Cherednichenko, D. / Sudarshan, T. S. et al. | 2004
- 529
-
Residual Stresses and Stacking Faults in n-Type 4H-SiC EpilayersOkojie, R. S. / Zhang, M. / Pirouz, P. et al. | 2004
- 533
-
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN DiodesStahlbush, R. E. / Twigg, M. E. / Irvine, K. G. / Sumakeris, J. J. / Chow, T. P. / Losee, P. A. / Zhu, L. / Tang, Y. / Wang, W. et al. | 2004
- 537
-
Partial Dislocations and Stacking Faults in 4H-SiC PiN DiodesTwigg, M. E. / Stahlbush, R. E. / Fatemi, M. / Arthur, S. D. / Fedison, J. B. / Tucker, J. B. / Wang, S. et al. | 2004
- 543
-
SiC Studied Via LEEN and Cathodoluminescence SpectroscopyBrillson, L. J. / Tumakha, S. / Okojie, R. S. / Zhang, M. / Pirouz, P. et al. | 2004
- 549
-
Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiCHenry, A. / Janson, M. S. / Janzen, E. et al. | 2004
- 555
-
Electrical Transport Properties of n-Type 4H and 6H Silicon CarbideContreras, S. / Pernot, J. et al. | 2004
- 561
-
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiCSteeds, J. W. / Furkert, S. / Hayes, J. M. / Sullivan, W. et al. | 2004
- 565
-
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC EpilayersTawara, T. / Tsuchida, H. / Izumi, S. / Kamata, I. / Izumi, K. et al. | 2004
- 569
-
Photoluminescence Mapping of a SiC Wafer in Device ProcessingTajima, M. / Sugahara, T. / Hoshino, N. / Tanimoto, S. / Takahashi, T. / Nakashima, S. / Yamamoto, T. et al. | 2004
- 573
-
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum WellsBai, S. / Devaty, R. P. / Choyke, W. J. / Kaiser, U. / Wagner, G. / MacMillan, M. F. et al. | 2004
- 577
-
Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC LayersJuillaguet, S. / Balloud, C. / Pernot, J. / Sartel, C. / Souliere, V. / Camassel, J. / Monteil, Y. et al. | 2004
- 581
-
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC SubstratesSkromme, B. J. / Mikhov, M. K. / Chen, L. / Samson, G. / Wang, R. / Li, C. / Bhat, I. et al. | 2004
- 585
-
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiCIvanov, I. G. / Janzen, E. et al. | 2004
- 589
-
Photoluminescence Study of C-H and C-D Centers in 4H SiCBai, S. / Yan, F. / Devaty, R. P. / Choyke, W. J. / Grotzschel, R. / Wagner, G. / MacMillan, M. F. et al. | 2004
- 593
-
Optical Characterization of Full SiC WaferEl Harrouni, I. / Bluet, J. M. / Ziane, D. / Mermoux, M. / Baillet, F. / Guillot, G. et al. | 2004
- 597
-
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in VacuumLebedev, A. A. / Strel chuk, A. M. / Kuznetsov, A. N. / Savkina, N. S. et al. | 2004
- 601
-
Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device ResearchMa, X. / Dudley, M. / Sudarshan, T. et al. | 2004
- 605
-
Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap FrequenciesGrivickas, V. / Grivickas, P. / Linnros, J. / Galeckas, A. et al. | 2004
- 609
-
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiCMermoux, M. / Crisci, A. / Baillet, F. et al. | 2004
- 613
-
Raman Scattering by Coupled Phonon-Plasmon ModesFalkovsky, L. A. et al. | 2004
- 617
-
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman SpectroscopyPusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Schmid, F. / Pensl, G. / Nagasawa, H. et al. | 2004
- 621
-
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman ScatteringKurimoto, E. / Hangyo, M. / Harima, H. / Kisoda, K. / Nishiguchi, T. / Nishino, S. / Nakashima, S. / Katsuno, M. / Ohtani, N. et al. | 2004
- 625
-
Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation MethodSeo, S. H. / Park, J. H. / Song, J. S. / Oh, M. H. et al. | 2004
- 629
-
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor DepositionOkamoto, M. / Kosugi, R. / Nakashima, S. / Fukuda, K. / Arai, K. et al. | 2004
- 633
-
Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering SpectroscopyUjihara, T. / Munetoh, S. / Kusunoki, K. / Kamei, K. / Usami, N. / Fujiwara, K. / Sazaki, G. / Nakajima, K. et al. | 2004
- 637
-
Low Temperature Annealing of Optical Centres in 4H SiCSteeds, J. W. / Furkert, S. / Hayes, J. M. / Sullivan, W. et al. | 2004
- 641
-
Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiCBai, S. / Choyke, W. J. / Devaty, R. P. et al. | 2004
- 645
-
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiCWeingartner, R. / Wellmann, P. J. / Winnacker, A. et al. | 2004
- 649
-
Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiCBlanc, C. / Pernot, J. / Camassel, J. et al. | 2004
- 653
-
Brillouin Scattering Studies of Surface Acoustic Waves in SiCAndrews, G. T. / Clouter, M. J. / Mroz, B. / Shishkin, Y. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 657
-
Optical Investigation of the Built-In Strain in 3C-SiC EpilayersGaleckas, A. / Kuznetsov, A. Y. / Chassagne, T. / Ferro, G. / Linnros, J. / Grivickas, V. et al. | 2004
- 661
-
Specificity of Electron Impact Ionization in Superstructure Silicon CarbideSankin, V. I. / Shkrebiy, P. P. / Savkina, N. S. / Lepneva, A. A. et al. | 2004
- 665
-
Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiCTamulaitis, G. / Yilmaz, I. / Shur, M. S. / Gaska, R. / Anderson, T. et al. | 2004
- 669
-
Electrical Characterization of Semi-Insulating 6H-SiC SubstratesSanchez, E. / Wan, J. / Wang, S. / Loboda, M. / Li, C. / Skowronski, M. et al. | 2004
- 673
-
Impact Ionization Coefficients of 4H-SiCHatakeyama, T. / Watanabe, T. / Kojima, K. / Sano, N. / Shiraishi, K. / Kushibe, M. / Imai, S. / Shinohe, T. / Suzuki, T. / Tanaka, T. et al. | 2004
- 677
-
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiCKasamakova-Kolaklieva, L. / Storasta, L. / Ivanov, I. G. / Magnusson, B. / Contreras, S. / Consejo, C. / Pernot, J. / Zielinski, M. / Janzen, E. et al. | 2004
- 681
-
Electrochemical C-V Profiling of n-Type 4H-SiCZekentes, K. / Kayambaki, M. / Mousset, S. et al. | 2004
- 685
-
Impurity Conduction Observed in Al-Doped 6H-SiCKrieger, M. / Semmelroth, K. / Pensl, G. et al. | 2004
- 689
-
Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy MobilitySaks, N. S. / Ancona, M. G. / Lipkin, L. A. et al. | 2004
- 693
-
High Phonon-Drag Thermoelectric Efficiency of SiC at Low TemperaturesVelmre, E. / Udal, A. / Grivickas, V. et al. | 2004
- 697
-
As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiCvan Wyk, E. / Leitch, A. W. R. et al. | 2004
- 701
-
Impact Ionization in alpha-SiC and Avalanche PhotoamplifiersSankin, V. I. et al. | 2004
- 705
-
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial LayersKalinina, E. / Kholuyanov, G. / Strel chuk, A. / Davydov, D. / Hallen, A. / Konstantinov, A. / Nikiforov, A. et al. | 2004
- 711
-
The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass TheoryGerstmann, U. / Gali, A. / Deak, P. / Frauenheim, T. / Overhof, H. et al. | 2004
- 715
-
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical StudyBockstedte, M. / Mattausch, A. / Pankratov, O. et al. | 2004
- 719
-
Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder SourceHerro, Z. G. / Bickermann, M. / Epelbaum, B. M. / Weingartner, R. / Kunecke, U. / Winnacker, A. et al. | 2004
- 723
-
In Situ Er-Doping of SiC Bulk Single CrystalsMuller, R. / Desperrier, P. / Seitz, C. / Weisser, M. / Magerl, A. / Maier, M. / Winnacker, A. / Wellmann, P. et al. | 2004
- 727
-
Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as SourceDesperrier, P. / Muller, R. / Winnacker, A. / Wellmann, P. J. et al. | 2004
- 731
-
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during GrowthMeziere, J. / Ferret, P. / Blanquet, E. / Pons, M. / Di Cioccio, L. / Billon, T. et al. | 2004
- 735
-
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si MeltJacquier, C. / Ferro, G. / Balloud, C. / Zielinski, M. / Camassel, J. / Polychroniadis, E. / Stoemenos, J. / Cauwet, F. / Monteil, Y. et al. | 2004
- 739
-
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor DepositionHatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 743
-
Formation of SiC Delta-Doped-Layer Structures by CVDTakahashi, K. / Uchida, M. / Kusumoto, O. / Yamashita, K. / Miyanaga, R. / Kitabatake, M. et al. | 2004
- 747
-
As-Grown 4H-SiC Epilayers with Magnetic PropertiesSyvajarvi, M. / Stanciu, V. / Izadifard, M. / Chen, W. M. / Buyanova, I. A. / Svendlindh, P. / Yakimova, R. et al. | 2004
- 751
-
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiCMatsuura, H. / Aso, K. / Kagamihara, S. / Iwata, H. / Ishida, T. / Nishikawa, K. et al. | 2004
- 755
-
Non-Contact Doping Profiling in Epitaxial SiCSavtchouk, A. / Oborina, E. / Hoff, A. M. / Lagowski, J. et al. | 2004
- 759
-
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC SubstratesZhang, M. / Hobgood, H. M. / Treu, M. / Pirouz, P. et al. | 2004
- 763
-
Spin-On Doping of Porous SiC with ErKoshka, Y. / Song, Y. / Walker, J. / Saddow, S. E. / Mynbaeva, M. et al. | 2004
- 767
-
Sc Impurity in Silicon CarbideYuryeva, E. I. / Zubkov, V. I. / Ballandovich, V. S. / Parfenova, I. I. et al. | 2004
- 771
-
Measurement of Low Level Nitrogen in Silicon Carbide Using SIMSWang, L. et al. | 2004
- 775
-
Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL MeasurementsJuillaguet, S. / Zielinski, M. / Balloud, C. / Sartel, C. / Consejo, C. / Boyer, B. / Souliere, V. / Camassel, J. / Monteil, Y. et al. | 2004
- 779
-
Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing ProcessUekusa, S. / Maruyama, H. et al. | 2004
- 783
-
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon CarbidePasold, G. / Albrecht, F. / Hulsen, C. / Sielemann, R. / Zeitz, W. D. / Witthuhn, W. et al. | 2004
- 787
-
Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic ResonanceBickermann, M. / Irmscher, K. / Epelbaum, B. M. / Winnacker, A. et al. | 2004
- 791
-
Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTSGrossner, U. / Grillenberger, J. / Albrecht, F. / Pasold, G. / Sielemann, R. / Svensson, B. G. / Witthuhn, W. et al. | 2004
- 797
-
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC EpilayersLee, K. S. / Lee, S. H. / Kim, M. / Nahm, K. S. et al. | 2004
- 801
-
Electro-Chemical Mechanical Polishing of Silicon CarbideLi, C. / Wang, R. / Seiler, J. / Bhat, I. et al. | 2004
- 805
-
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC SubstratesHeydemann, V. D. / Everson, W. J. / Gamble, R. D. / Snyder, D. W. / Skowronski, M. et al. | 2004
- 809
-
Surface Modification of 3C-SiC for Good Ni Ohmic ContactNoh, J. I. / Lee, S. H. / Nahm, K. S. et al. | 2004
- 813
-
Mechanisms in Electrochemical Etching of alpha-SiC SubstratesMikami, H. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 817
-
Modification of the Silicon Carbide by Proton IrradiationBogdanova, E. V. / Kozlovski, V. V. / Rumyantsev, D. S. / Volkova, A. A. / Lebedev, A. A. et al. | 2004
- 821
-
Etching of SiC with Fluorine ECR PlasmaForster, C. / Cimalla, V. / Kosiba, R. / Ecke, G. / Weih, P. / Ambacher, O. / Pezoldt, J. et al. | 2004
- 825
-
Characterization of 3C-SiC Monocrystals Using Positron Annihilation SpectroscopyKerbiriou, X. / Gredde, A. / Barthe, M. F. / Desgardin, P. / Blondiaux, G. et al. | 2004
- 829
-
Improvement of SiC Wafer Warp by AnnealingSasaki, M. / Harada, S. / Okamoto, Y. / Kinoshita, H. / Miyanagi, Y. / Shiomi, H. et al. | 2004
- 833
-
Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic ContactsPope, G. / Guy, O. / Mawby, P. A. et al. | 2004
- 837
-
Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiCParisini, A. / Poggi, A. / Nipoti, R. et al. | 2004
- 841
-
Improved AlNi Ohmic Contacts to p-Type SiCTsao, B. H. / Liu, S. / Scofield, J. et al. | 2004
- 845
-
Electrical Characterization of Deposited and Oxidized Ta~2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor StructuresPerez, A. / Tournier, D. / Montserrat, J. / Mestres, N. / Sandiumenge, F. / Millan, J. et al. | 2004
- 849
-
In Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface using a Silicon InterlayerLee, W. Y. / Teng, K. S. / Wilks, S. P. et al. | 2004
- 853
-
The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron SpectroscopyGuy, O. J. / Pope, G. / Blackwood, I. / Teng, K. S. / Lee, W. Y. / Wilks, S. P. / Mawby, P. A. et al. | 2004
- 857
-
The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiCKorolkov, O. / Kuznetsova, N. / Ruut, J. / Rang, T. et al. | 2004
- 861
-
Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky BarrierLa Via, F. / Roccaforte, F. / Raineri, V. / Mauceri, M. / Ruggiero, A. / Musumeci, P. / Calcagno, L. et al. | 2004
- 865
-
Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiCRoccaforte, F. / La Via, F. / Baeri, A. / Raineri, V. / Calcagno, L. / Mangano, F. et al. | 2004
- 869
-
Electrical Characterization of Inhomogeneous Ni~2/Si/SiC Schottky ContactsRoccaforte, F. / La Via, F. / Raineri, V. / Pierobon, R. / Zanoni, E. et al. | 2004
- 873
-
Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon CarbideBaeri, A. / Raineri, V. / Roccaforte, F. / La Via, F. / Zanetti, E. et al. | 2004
- 877
-
High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiCKakanakov, R. / Kasamakova-Kolaklieva, L. / Hristeva, N. / Lepoeva, G. / Gomes, J. B. / Avramova, I. / Marinova, T. et al. | 2004
- 881
-
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiCScorzoni, A. / Moscatelli, F. / Poggi, A. / Cardinali, G. C. / Nipoti, R. et al. | 2004
- 885
-
Effect of High-Dose Aluminium Implantation on 4H-SiC OxidationCheng, L. / Casady, J. R. B. / Mazzola, J. / Casady, J. B. / Koshka, Y. / Bondarenko, V. et al. | 2004
- 889
-
Structural Defects Formed in Al-Implanted and Annealed 4H-SiCJones, K. A. / Zheleva, T. S. / Kulkarni, V. N. / Ervin, M. H. / Derenge, M. A. / Vispute, R. D. et al. | 2004
- 893
-
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC CrystalsBlanque, S. / Perez, R. / Godignon, P. / Mestres, N. / Morvan, E. / Kerlain, A. / Dua, C. / Brylinski, C. / Zielinski, M. / Camassel, J. et al. | 2004
- 897
-
Effect of Implantation Temperature on Redistribution of Al in SiC during AnnealingUsov, I. O. / Suvorova, A. A. / Suvorov, A. V. et al. | 2004
- 901
-
Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiCSenzaki, J. / Fukuda, K. / Arai, K. et al. | 2004
- 905
-
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance SpectroscopyNarita, K. / Hijikata, Y. / Yaguchi, H. / Yoshida, S. / Senzaki, J. / Nakashima, S. et al. | 2004
- 909
-
Annealing Process of N^+-/P^+-Ions Coimplanted along with Si^+-, C^+- or Ne^+-Ions into 4H-SiC - Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?Schmid, F. / Pensl, G. et al. | 2004
- 913
-
Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (1120) FaceNegoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H. / Schmid, F. / Pensl, G. et al. | 2004
- 917
-
Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiCLinnarsson, M. K. / Janson, M. S. / Shoner, A. / Konstantinov, A. / Svensson, B. G. et al. | 2004
- 921
-
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC LayersMerrett, J. N. / Scofield, J. D. / Tsao, B. H. / Mazzola, M. / Seale, D. / Draper, W. A. / Sankin, I. / Casady, J. B. / Bondarenko, V. et al. | 2004
- 925
-
Reactive Ion Etching of Silicon Carbide with Patterned Boron ImplantationVassilevski, K. V. / Hedley, J. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. et al. | 2004
- 929
-
Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiCJones, K. A. / Zheleva, T. S. / Ervin, M. H. / Shah, P. B. / Derenge, M. A. / Gerardi, G. J. / Freitas, J. A. / Vispute, R. D. et al. | 2004
- 933
-
Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite CapNegoro, Y. / Katsumoto, K. / Kimoto, T. / Matsunami, H. et al. | 2004
- 937
-
Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room TemperatureDeclemy, A. / Shiryaev, A. / Stepanov, S. / Barbot, J. F. / Beaufort, M. F. / Oliviero, E. / Ntsoenzok, E. / Sauvage, T. et al. | 2004
- 941
-
Visible Light Laser Irradiation: a Tool for Implantation Damage ReductionCamassel, J. / Peyre, H. / Brink, D. J. / Zielinski, M. / Blanque, S. / Mestres, N. / Godignon, P. et al. | 2004
- 945
-
SiC donor doping by 300 deg C P implantation: characterization of the doped layer properties in dependence of the post-implantation annealing temperaturePoggi, A. / Nipoti, R. / Moscatelli, F. / Cardinali, G.C. / Canino, M. et al. | 2004
- 945
-
SiC Donor Doping by 300^oC P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing TemperaturePoggi, A. / Nipoti, R. / Moscatelli, F. / Cardinali, G. C. / Canino, M. et al. | 2004
- 951
-
SiC-Based Current Limiter DevicesChante, J. P. / Tournier, D. / Planson, D. / Raynaud, C. / Lazar, M. / Locatelli, M. L. / Brosselard, P. et al. | 2004
- 957
-
High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature ApplicationsZhao, J. H. / Li, X. / Tone, K. / Alexandrov, P. / Fursin, L. / Carter, J. / Weiner, M. et al. | 2004
- 963
-
SiC Devices for High Voltage High Power ApplicationsSugawara, Y. et al. | 2004
- 969
-
First Principles Derivation of Carrier Transport across Metal - SiC BarriersDimitriu, C. B. / Horsfall, A. B. / Wright, N. G. / Johnson, C. M. / Vassilevski, K. V. / O Neill, A. G. et al. | 2004
- 973
-
Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode CharacteristicsWeiss, R. / Frey, L. / Ryssel, H. et al. | 2004
- 977
-
Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon CarbideBuniatyan, V. V. / Aroutiounian, V. M. / Zekentes, K. / Camara, N. / Soukiassian, P. et al. | 2004
- 981
-
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch TechnologyTreu, M. / Rupp, R. / Brunner, H. / Dahlquist, F. / Hecht, C. et al. | 2004
- 985
-
4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting IssuesSyrkin, A. / Dmitriev, V. / Soukhoveev, V. / Mynbaeva, M. / Kakanakov, R. / Hallin, C. / Janzen, E. et al. | 2004
- 989
-
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron ImplantationVassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. et al. | 2004
- 993
-
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V MeasurementsMoscatelli, F. / Scorzoni, A. / Poggi, A. / Cardinali, G. C. / Nipoti, R. et al. | 2004
- 997
-
Origin of Leakage Current in SiC Schottky Barrier Diodes at High TemperatureSaitoh, H. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1001
-
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen TreatmentsKim, D. H. / Na, H. J. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 1005
-
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry EtchingSarov, G. / Cholakova, T. / Kakanakov, R. et al. | 2004
- 1009
-
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC SubstrateTanaka, Y. / Ohno, T. / Oyanagi, N. / Nishizawa, S. / Suzuki, T. / Fukuda, K. / Yatsuo, T. / Arai, K. et al. | 2004
- 1013
-
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting RingBahng, W. / Song, G. H. / Kim, H. W. / Seo, K. S. / Kim, N. K. et al. | 2004
- 1017
-
Current Transport Mechanisms in 4H-SiC PiN DiodesCamara, N. / Bano, E. / Zekentes, K. et al. | 2004
- 1021
-
On-Chip Temperature Monitoring of a SiC Current LimiterTournier, D. / Godignon, P. / Millan, J. / Planson, D. / Chante, J. P. / Sarrus, F. / de Palma, J. F. et al. | 2004
- 1025
-
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical StudyLazar, M. / Cardinali, G. / Raynaud, C. / Poggi, A. / Planson, D. / Nipoti, R. / Chante, J. P. et al. | 2004
- 1029
-
Low Voltage Silicon Carbide Zener DiodeVassilevski, K. V. / Zekentes, K. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. et al. | 2004
- 1033
-
Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination ExtensionRaynaud, C. / Lazar, M. / Planson, D. / Chante, J. P. / Sassi, Z. et al. | 2004
- 1037
-
Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon CarbideZimmermann, U. / Domeij, M. / Hallen, A. / Ostling, M. et al. | 2004
- 1041
-
4H-SiC p-n Diode using Internal Ring (IR) Termination TechniqueSong, G. H. / Kim, H. W. / Bahng, W. / Kim, S. C. / Kim, N. K. et al. | 2004
- 1045
-
Numerical Study of Current Crowding Phenomenon in Complementary 4H-SiC JBS RectifiersRang, T. / Higelin, G. / Kurel, R. et al. | 2004
- 1049
-
Influence of H~2 Pre-Treatment on Ni/4H-SiC Schottky Diode PropertiesYamamoto, Y. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 1053
-
The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN DiodesHefner, A. / McNutt, T. / Berning, D. / Singh, R. / Akuffo, A. et al. | 2004
- 1057
-
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC SubstrateStrel chuk, A. M. / Lebedev, A. A. / Kuznetsov, A. N. / Savkina, N. S. / Soloviev, V. A. et al. | 2004
- 1061
-
High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC MesasSpry, D. J. / Trunek, A. J. / Neudeck, P. G. et al. | 2004
- 1065
-
Electrical Properties of pn Diodes on 4H-SiC(0001) C-Face and (1120) FaceTanaka, Y. / Kojima, K. / Suzuki, T. / Hayashi, T. / Fukuda, K. / Yatsuo, T. / Arai, K. et al. | 2004
- 1069
-
Avalanche Multiplication and Breakdown in 4H-SiC DiodesNg, B. K. / David, J. P. R. / Massey, D. J. / Tozer, R. C. / Rees, G. J. / Yan, F. / Zhao, J. H. / Weiner, M. et al. | 2004
- 1073
-
Investigation of Rapid Thermal Annealed pn-Junctions in SiCRambach, M. / Weiss, R. / Frey, L. / Bauer, A. J. / Ryssel, H. et al. | 2004
- 1077
-
Ballistic Electron Emission Microscopy Study of p-Type 4H-SiCDing, Y. / Park, K. B. / Pelz, J. P. / Los, A. V. / Mazzola, M. S. et al. | 2004
- 1081
-
Defect Influence on the Electrical Properties of 4H-SiC Schottky DiodesScaltrito, L. / Celasco, E. / Porro, S. / Ferrero, S. / Giorgis, F. / Pirri, C. F. / Perrone, D. / Meotto, U. / Mandracci, P. / Richieri, G. et al. | 2004
- 1085
-
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical PropertiesIzumi, S. / Kamata, I. / Tawara, T. / Fujisawa, H. / Tsuchida, H. et al. | 2004
- 1089
-
Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n DiodesBludov, A. V. / Boltovets, M. S. / Vassilevski, K. V. / Zorenko, A. V. / Zekentes, K. / Lebedev, A. A. / Krivutsa, V. A. et al. | 2004
- 1093
-
Bulk SiC Devices for High Radiation EnvironmentsCunningham, W. / Cooke, M. / Melone, J. / Horn, M. / Kazukauskas, V. / Roy, P. / Doherty, F. / Glaser, M. / Vaitkus, J. / Rahman, M. et al. | 2004
- 1097
-
2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling DiodesLi, Y. / Fursin, L. / Wu, J. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1101
-
Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN DiodesSankin, I. / Draper, W. A. / Merrett, J. N. / Casady, J. R. B. / Casady, J. B. et al. | 2004
- 1105
-
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage DriftDas, M. K. / Sumakeris, J. J. / Paisley, M. J. / Powell, A. et al. | 2004
- 1109
-
4,308V, 20.9 mOmega-cm^2 4H-SiC MPS Diodes Based on a 30mum Drift LayerWu, J. / Fursin, L. / Li, Y. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1113
-
Approaches to Stabilizing the Forward Voltage of Bipolar SiC DevicesSumakeris, J. J. / Das, M. / Hobgood, H. M. / Muller, S. G. / Paisley, M. J. / Ha, S. / Skowronski, M. / Palmour, J. W. / Carter, C. H. et al. | 2004
- 1117
-
Extrinsic Base Design of SiC Bipolar TransistorsDanielsson, E. / Domeij, M. / Zetterling, C. M. / Ostling, M. / Schoner, A. et al. | 2004
- 1121
-
Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm^2 Power Density Handling AbilityPerez-Wurfl, I. / Torvik, J. / Van Zeghbroeck, B. et al. | 2004
- 1125
-
Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction TransistorsDynefors, K. / Desmaris, V. / Eriksson, J. / Nilsson, P. A. / Rorsman, N. / Zirath, H. et al. | 2004
- 1129
-
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO ThyristorBrosselard, P. / Zorngiebel, V. / Planson, D. / Scharnholz, S. / Chante, J. P. / Spahn, E. / Raynaud, C. / Lazar, M. et al. | 2004
- 1133
-
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al ImplantationStrel chuk, A. M. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Kuznetsov, A. N. / Valakh, M. Y. / Kiselev, V. S. / Romanyuk, B. N. / Raynaud, C. / Chante, J. P. et al. | 2004
- 1137
-
The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control ApplicationsZhao, J. H. / Zhang, J. / Luo, Y. / Hu, X. / Li, Y. / Yu, H. / Lai, J. / Alexandrov, P. / Fursin, L. / Li, X. et al. | 2004
- 1141
-
SiC BJT Technology for Power Switching and RF ApplicationsAgarwal, A. / Ryu, S. H. / Capell, C. / Richmond, J. / Palmour, J. / Bartlow, H. / Chow, P. / Scozzie, S. / Tipton, W. / Baynes, S. et al. | 2004
- 1145
-
Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTsIvanov, P. A. / Levinshtein, M. E. / Agarwal, A. K. / Palmour, J. W. / Ryu, S. H. et al. | 2004
- 1149
-
High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction TransistorsZhang, J. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1153
-
Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge CircuitsMazzola, M. S. / Casady, J. B. / Merrett, N. / Sankin, I. / Draper, W. / Seale, D. / Bondarenko, V. / Koshka, Y. / Gafford, J. / Kelley, R. et al. | 2004
- 1157
-
1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and CharacterizationFursin, L. / Li, X. / Zhao, J. H. et al. | 2004
- 1161
-
4,340V, 40 mOmega cm^2 Normally-Off 4H-SiC VJFETZhao, J. H. / Fursin, L. / Alexandrov, P. / Li, X. / Weiner, M. et al. | 2004
- 1165
-
A 500V, Very High Current Gain (beta=1517) 4H-SiC Bipolar Darlington TransistorZhang, J. / Alexandrov, P. / Zhao, J. H. et al. | 2004
- 1169
-
A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain beta>640 and Tested in a Half-Bridge Inverter up to 20A at V~B~u~s=900VZhao, J. H. / Zhang, J. / Alexandrov, P. / Burke, T. et al. | 2004
- 1173
-
A High Voltage (1,750V) and High Current Gain (beta=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 mum) Drift layerZhao, J. H. / Zhang, J. / Alexandrov, P. / Li, X. / Burke, T. et al. | 2004
- 1177
-
Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETsKerlain, A. / Morvan, E. / Dua, C. / Caillas, N. / Brylinski, C. et al. | 2004
- 1181
-
Fabrication and Characterization of 4H-SiC Planar MESFET using Ion-ImplantationNa, H. J. / Kim, D. H. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J. et al. | 2004
- 1185
-
Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating SubstratesGassoumi, M. / Sghaier, N. / Dermoul, I. / Chekir, F. / Maaref, H. / Bluet, J. M. / Guillot, G. / Morvan, E. / Noblanc, O. / Dua, C. et al. | 2004
- 1189
-
600V 4H-SiC RESURF-Type JFETFujikawa, K. / Harada, S. / Ito, A. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1193
-
Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFETLos, A. V. / Mazzola, M. S. / Kajfez, D. / McDaniel, B. T. / Smith, C. E. / Kretchmer, J. / Rowland, L. B. / Casady, J. B. et al. | 2004
- 1197
-
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiCLi, X. / Zhao, J. H. et al. | 2004
- 1201
-
Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power SwitchFriedrichs, P. / Elpelt, R. / Schorner, R. / Mitlehner, H. / Stephani, D. et al. | 2004
- 1205
-
RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating SubstratesSriram, S. / Ward, A. / Janke, C. / Alcorn, T. / Hagleitner, H. / Henning, J. / Wieber, K. / Jenny, J. / Sumakeris, J. / Allen, S. et al. | 2004
- 1209
-
High frequency measurements and simulations of SiC MESFETs up to 250 deg CLiu, W. / Zetterling, C.M. / Östling, M. / Eriksson, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 1209
-
High Frequency Measurements and Simulations of SiC MESFETs up to 250^oCLiu, W. / Zetterling, C. M. / Ostling, M. / Eriksson, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 1213
-
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETsZhao, J. H. / Tone, K. / Li, X. / Alexandrov, P. / Fursin, L. / Weiner, M. et al. | 2004
- 1217
-
A 600V Deep-Implanted Gate Vertical JFETMizukami, M. / Takikawa, O. / Murooka, M. / Imai, S. / Kinoshita, K. / Hatakeyama, T. / Tsukuda, M. / Saito, W. / Omura, I. / Shinohe, T. et al. | 2004
- 1221
-
Single Contact-Material MESFETs on 4H-SiCTanimoto, S. / Inada, M. / Kiritani, N. / Hoshi, M. / Okushi, H. / Arai, K. et al. | 2004
- 1225
-
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect TransistorsJonsson, R. / Wahab, Q. / Rudner, S. et al. | 2004
- 1229
-
Investigation of the Scalability of 4H-SiC MESFETs for High Frequency ApplicationsRorsman, N. / Nilsson, P. A. / Eriksson, J. / Andersson, K. / Zirath, H. et al. | 2004
- 1233
-
The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si DevicesAdachi, K. / Ohashi, H. / Arai, K. et al. | 2004
- 1237
-
Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiCMartinez, A. / Hjelm, M. / Nilsson, H. E. / Lindefelt, U. et al. | 2004
- 1241
-
Edge Termination Technique for SiC Power DevicesKim, H. W. / Bahng, W. / Song, G. H. / Kim, S. C. / Kim, N. K. / Kim, E. D. et al. | 2004
- 1245
-
BIFET - a Novel Bipolar SiC Switch for High Voltage Power ElectronicsMitlehner, H. / Friedrichs, P. / Elpelt, R. / Dohnke, K. O. / Schorner, R. / Stephani, D. et al. | 2004
- 1249
-
A Review of SiC Power Switch: Achievements, Difficulties and PerspectivesSankin, I. / Merrett, J. N. / Draper, W. A. / Casady, J. R. B. / Casady, J. B. et al. | 2004
- 1253
-
A Highly Effective Edge Termination Design for SiC Planar High Power DevicesPerez, R. / Mestres, N. / Blanque, S. / Tournier, D. / Jorda, X. / Godignon, P. / Nipoti, R. et al. | 2004
- 1257
-
Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiCWang, X. / Cooper, J. A. et al. | 2004
- 1263
-
The SiC-SiO~2 Interface: a Unique Advantage of SiC as a Wide Energy-Gap MaterialDimitrijev, S. et al. | 2004
- 1269
-
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC WaferSenzaki, J. / Goto, M. / Kojima, K. / Yamabe, K. / Fukuda, K. et al. | 2004
- 1275
-
Recent Advances in (0001) 4H-SiC MOS Device TechnologyDas, M. K. et al. | 2004
- 1281
-
Characterizations of SiC/SiO~2 Interface Quality Towards High Power MOSFETs RealizationZiane, D. / Bluet, J. M. / Guillot, G. / Godignon, P. / Monserrat, J. / Ciechonski, R. / Syvajarvi, M. / Yakimova, R. / Chen, L. / Mawby, P. et al. | 2004
- 1287
-
Hall Effect Measurements in SiC Buried-Channel MOS DevicesSaks, N. S. / Ryu, S. H. et al. | 2004
- 1293
-
First-Principles Study of O Adsorption at SiC SurfaceRurali, R. / Wachowicz, E. / Ordejon, P. / Godignon, P. / Rebollo, J. / Hyldgaard, P. et al. | 2004
- 1297
-
Interface States in Abrupt SiO~2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C ClustersOhnuma, T. / Tsuchida, H. / Jikimoto, T. et al. | 2004
- 1301
-
Investigation of SiO~2/SiC Interface using Positron Annihilation TechniqueMaekawa, M. / Kawasuso, A. / Yoshikawa, M. / Ichimiya, A. et al. | 2004
- 1305
-
A Comparison between SiO~2/4H-SiC Interface Traps on (0001) and (1120) FacesOlafsson, H. O. / Hallin, C. / Sveinbjornsson, E. O. et al. | 2004
- 1309
-
Interface Properties of 4H-SiC/SiO~2 with MOS Capacitors and FETs Annealed in O~2, N~2O, NO and CO~2Wang, W. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. / Issacs-Smith, T. / Williams, J. / Jones, K. A. / Lelis, A. / Tipton, W. / Scozzie, S. et al. | 2004
- 1313
-
Initial Oxidation of 6H-SiC (0001) (√3 x √3)-R30^o and 3 x 3 Surfaces Studied by AES and RHEEDAoyama, T. / Voegeli, W. / Ichimiya, A. / Hisada, Y. / Mukainakano, S. et al. | 2004
- 1317
-
Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron SpectroscopySeyller, T. / Emtsev, K. V. / Graupner, R. / Ley, L. et al. | 2004
- 1321
-
Oxidation Studies of Non-Polar 4H-SiC SurfacesVirojanadara, C. / Johansson, L. I. et al. | 2004
- 1325
-
Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron RadiationRoy, J. / Silly, M. G. / Enriquez, H. / Soukiassian, P. / Crotti, C. / Fontana, S. / Perfetti, P. et al. | 2004
- 1329
-
A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N~2OJohansson, L. I. / Virojanadara, C. / Eickhoff, T. / Drube, W. et al. | 2004
- 1333
-
Radical Nitridation of Ultra-Thin SiO~2/SiC StructureYano, H. / Furumoto, Y. / Niwa, T. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 1337
-
Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiCChen, L. / Guy, O. J. / Pope, G. / Teng, K. S. / Maffeis, T. / Wilks, S. P. / Mawby, P. A. / Jenkins, T. / Brieva, A. / Hayton, D. J. et al. | 2004
- 1341
-
Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic OxidationHijikata, Y. / Yaguchi, H. / Ishida, Y. / Yoshikawa, M. / Kamiya, T. / Yoshida, S. et al. | 2004
- 1345
-
Diluted Nitric Oxide (NO) Annealing of SiO~2/4H-SiC in Cold-Wall Oxidation FurnaceKosugi, R. / Fukuda, K. et al. | 2004
- 1349
-
Thermal Oxidation of 4H-Silicon using the Afterglow MethodHoff, A. M. / Oborina, E. / Saddow, S. E. / Savtchouk, A. et al. | 2004
- 1353
-
Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical MethodsMikami, H. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2004
- 1357
-
Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion ImplantationPoggi, A. / Nipoti, R. / Solmi, S. / Bersani, M. / Vanzetti, L. et al. | 2004
- 1361
-
Electronic Properties of SiON/HfO~2 Insulating Stacks on 4H-SiC (0001)Afanas ev, V. V. / Campbell, S. A. / Cheong, K. Y. / Ciobanu, F. / Dimitrijev, S. / Pensl, G. / Stesmans, A. / Zhong, L. et al. | 2004
- 1365
-
Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiCCheong, K. Y. / Dimitrijev, S. / Han, J. et al. | 2004
- 1369
-
Structural and Electronic Properties of the 6H-SiC(0001)/Al~2O~3 Interface Prepared by Atomic Layer DepositionSeyller, T. / Gao, K. / Ley, L. / Ciobanu, F. / Pensl, G. / Tadich, A. / Riley, J. D. / Leckey, R. C. G. et al. | 2004
- 1373
-
Development of Sol-Gel MgO Thin Films for SiC Insulation ApplicationsBondoux, C. / Prene, P. / Belleville, P. / Guillet, F. / Jerisian, R. et al. | 2004
- 1377
-
Effect of In Situ Chemical Surface Treatments on AlN/SiC Interfacial ContaminationStodilka, D. O. / Gila, B. P. / Abernathy, C. R. / Lambers, E. / Ren, F. / Pearton, S. J. et al. | 2004
- 1381
-
Comparison of the Electrical Channel Properties between Dry- and Wet-Oxidized 6H-SiC MOSFETs Investigated by Hall EffectLaube, M. / Pensl, G. / Lee, K. K. / Ohshima, T. et al. | 2004
- 1385
-
Development of 10 kV 4H-SiC Power DMOSFETsRyu, S. H. / Agarwal, A. / Krishnaswami, S. / Richmond, J. / Palmour, J. et al. | 2004
- 1389
-
Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFETHanna, E. / Chang, H. R. / Radun, A. V. / Zhang, Q. / Gomez, M. et al. | 2004
- 1393
-
Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiCMatin, M. / Saha, A. / Cooper, J. A. et al. | 2004
- 1397
-
Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation AnnealingKosugi, R. / Kiritani, N. / Suzuki, K. / Yatsuo, T. / Adachi, K. / Fukuda, K. et al. | 2004
- 1401
-
A P-Channel MOSFET on 4H-SiCHan, J. S. / Cheong, K. Y. / Dimitrijev, S. / Laube, M. / Pensl, G. et al. | 2004
- 1405
-
Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiCOhshima, T. / Lee, K. K. / Ishida, Y. / Kojima, K. / Tanaka, Y. / Takahashi, T. / Yoshikawa, M. / Okumura, H. / Arai, K. / Kamiya, T. et al. | 2004
- 1409
-
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)Kaido, J. / Kimoto, T. / Suda, J. / Matsunami, H. et al. | 2004
- 1413
-
930, 170Omega.cm^2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO AnnealingWang, W. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. et al. | 2004
- 1413
-
930V, 170m omega.cm2 lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealingWang, W. / Banerjee, S. / Chow, T.P. / Gutmann, R.J. et al. | 2004
- 1417
-
4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm^2/VsFukuda, K. / Kato, M. / Senzaki, J. / Kojima, K. / Suzuki, T. et al. | 2004
- 1421
-
Fabrication of 4H-SiC Double-Epitaxial MOSFETsHarada, S. / Okamoto, M. / Yatsuo, T. / Adachi, K. / Suzuki, K. / Suzuki, S. / Fukuda, K. / Arai, K. et al. | 2004
- 1425
-
Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N~2O)Gudjonsson, G. / Olafsson, H. O. / Sveinbjornsson, E. O. et al. | 2004
- 1429
-
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (1120) Face by Oxidation in N~2O AmbientKanzaki, Y. / Kinbara, H. / Kosugi, H. / Suda, J. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1433
-
Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETsWright, N. G. / Poolamai, N. / Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. et al. | 2004
- 1437
-
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 KLee, H. S. / Koo, S. M. / Zetterling, C. M. / Danielsson, E. / Domeij, M. / Ostling, M. et al. | 2004
- 1441
-
Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETsRashid, S. J. / Mihaila, A. / Udrea, F. / Malhan, R. K. / Amaratunga, G. et al. | 2004
- 1445
-
SiC JMOSFETs for High-Temperature Stable Circuit OperationKoo, S. M. / Zetterling, C. M. / Lee, H. S. / Ostling, M. et al. | 2004
- 1451
-
Advanced Processing Techniques for Silicon Carbide MEMS and NEMSZorman, C. A. / Mehregany, M. et al. | 2004
- 1457
-
Microscopic Structure and Electrical Activity of 4H-SiC/SiO~2 Interface Defects: an EPR Study of Oxidized Porous SiCvon Bardeleben, H. J. / Cantin, J. L. / Shishkin, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 1463
-
Porous Silicon Carbide as a Membrane for Implantable BiosensorsRosenbloom, A. J. / Shishkin, Y. / Sipe, D. M. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 1467
-
Triangular Pore Formation in Highly Doped n-Type 4H SiCShishkin, Y. / Choyke, W. J. / Devaty, R. P. et al. | 2004
- 1471
-
Porous Structure of Anodized p-Type 6H SiCShishkin, Y. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2004
- 1475
-
Vibrational and Emission Properties of Porous 6H-SiCRossi, A. M. / Ballarini, V. / Ferrero, S. / Giorgis, F. et al. | 2004
- 1479
-
Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal StabilityBai, J. / Dhanaraj, G. / Gouma, P. / Dudley, M. / Mynbaeva, M. et al. | 2004
- 1483
-
SiC Base Micro-Probe for Myocardial Ischemia MonitoringPascual, J. / Valvo, F. / Godignon, P. / Aguilo, J. / Millan, J. / Camassel, J. / Mestres, N. et al. | 2004
- 1487
-
Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN DiodesWolborski, M. / Bakowski, M. / Klamra, W. et al. | 2004
- 1491
-
Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet PhotodectorWu, Z. / Xin, X. / Yan, F. / Zhao, J. H. et al. | 2004
- 1495
-
Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp TerminationBrezeanu, G. / Godignon, P. / Dimitrova, E. / Raynaud, C. / Planson, D. / Mihaila, A. / Udrea, F. / Millan, J. / Amaratunga, G. / Boianceanu, C. et al. | 2004
- 1499
-
Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial LayersFawcett, T. J. / Wolan, J. T. / Myers, R. L. / Walker, J. / Saddow, S. E. et al. | 2004
- 1503
-
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial LayersLe Donne, A. / Binetti, S. / Acciarri, M. / Castaldini, A. / Nava, F. / Cavallini, A. / Pizzini, S. et al. | 2004
- 1507
-
Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate ElectrodeNakagomi, S. / Takahashi, M. / Kokubun, Y. / Uneus, L. / Savage, S. / Wingbrant, H. / Andersson, M. / Lundstrom, I. / Lofdahl, M. / Spetz, A. L. et al. | 2004
- 1511
-
Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded SubstratesMyers, R. L. / Saddow, S. E. / Rao, S. / Hobart, K. D. / Fatemi, M. / Kub, F. J. et al. | 2004
- 1515
-
Formation of 3C-SiC Films Embedded in SiO~2 by Sacrificial OxidationPanknin, D. / Godignon, P. / Mestres, N. / Polychroniadis, E. / Stoemenos, J. / Ferro, G. / Pezoldt, J. / Skorupa, W. et al. | 2004
- 1519
-
Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection TechniqueFu, X. A. / Dunning, J. / Zorman, C. A. / Mehregany, M. et al. | 2004
- 1523
-
Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined DevicesDunning, J. / Fu, X. A. / Rajgopal, S. / Mehregany, M. / Zorman, C. A. et al. | 2004
- 1527
-
Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin FilmRajanna, K. / Tanaka, S. / Itoh, T. / Esashi, M. et al. | 2004
- 1531
-
Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC SubstratesHuang, X. M. H. / Feng, X. L. / Prakash, M. K. / Kumar, S. / Zorman, C. A. / Mehregany, M. / Roukes, M. L. et al. | 2004
- 1537
-
Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth RateEpelbaum, B. M. / Bickermann, M. / Winnacker, A. et al. | 2004
- 1537
-
Sublimation growth of bulk AIN crystals: process temperature and growth rateEpelbaum, B.M. / Bickermann, M. / Winnacker, A. et al. | 2004
- 1541
-
Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVTBickermann, M. / Epelbaum, B. M. / Winnacker, A. et al. | 2004
- 1545
-
Experimental and theoretical analysis of sublimation growth of bulk AIN crystalsMokhov, E. / Smirnov, S. / Segal, A. / Bazarevskiy, D. / Makarov, Y. / Ramm, M. / Helava, H. et al. | 2004
- 1545
-
Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN CrystalsMokhov, E. / Smirnov, S. / Segal, A. / Bazarevskiy, D. / Makarov, Y. / Ramm, M. / Helava, H. et al. | 2004
- 1549
-
X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3YingShen, L. / Hashimoto, S. / Abe, K. / Hayashibe, R. / Yamagami, T. / Nakao, M. / Kamimura, K. et al. | 2004
- 1553
-
Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) SubstratesShen, X. Q. / Okumura, H. et al. | 2004
- 1557
-
Growth of GaN/AlN Quantum Dots on SiC (0001) by Plasma-Assisted MBEGogneau, N. / Fossard, F. / Monroy, E. / Monnoye, S. / Mank, H. / Daudin, B. et al. | 2004
- 1561
-
Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC EpilayersFounta, S. / Gogneau, N. / Martinez-Guerrero, E. / Ferro, G. / Monteil, Y. / Daudin, B. / Mariette, H. et al. | 2004
- 1565
-
In Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a PyrometerSuzuki, T. / Inushima, T. et al. | 2004
- 1569
-
Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam EpitaxyOnojima, N. / Kaido, J. / Suda, J. / Kimoto, T. / Matsunami, H. et al. | 2004
- 1573
-
Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBEMonroy, E. / Sarigiannidou, E. / Fossard, F. / Enjalbert, F. / Gogneau, N. / Bellet-Amalric, E. / Brault, J. / Rouviere, J. L. / Dang, L. S. / Monnoye, S. et al. | 2004
- 1577
-
Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC SubstratesFossard, F. / Brault, J. / Gogneau, N. / Monroy, E. / Enjalbert, F. / Dang, L. S. / Bellet-Amalric, E. / Monnoye, S. / Mank, H. / Daudin, B. et al. | 2004
- 1581
-
GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase EpitaxyNapierala, J. / Martin, D. / Buhlmann, H. J. / Gradecak, S. / Ilegems, M. et al. | 2004
- 1585
-
Growth and Field Emission of GaN NanowiresKim, T. Y. / Lee, S. H. / Mo, Y. H. / Nahm, K. S. et al. | 2004
- 1589
-
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC SubstratesHelman, A. / Tchernycheva, M. / Moumanis, K. / Lusson, A. / Warde, E. / Julien, F. / Monroy, E. / Fossard, F. / Daudin, B. / Dang, L. S. et al. | 2004
- 1593
-
Photoluminescence of GaN/AlN Quantum Dots Grown on SiC SubstratesFossard, F. / Gogneau, N. / Monroy, E. / Dang, L. S. / Monnoye, S. / Mank, H. / Daudin, B. et al. | 2004
- 1597
-
Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor DepositionJeong, J. K. / Song, H. K. / Um, M. Y. / Kim, H. J. / Seo, H. C. / Yoon, E. / Hwang, C. S. et al. | 2004
- 1601
-
X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiCPoust, B. / Feichtinger, P. / Sandhu, R. / Smorchkova, I. / Heying, B. / Block, T. / Wojtowicz, M. / Goorsky, M. et al. | 2004
- 1605
-
Effects of Crystallinity on Hydrogen Exfoliation of GaN LayersHayashi, S. / Poust, B. / Heying, B. / Goorsky, M. S. et al. | 2004
- 1609
-
Radiotracer Spectroscopy or Group II Acceptors in GaNAlbrecht, F. / Pasold, G. / Grillenberger, J. / Reislohner, U. / Witthuhn, M. D. W. / ISOLDE Collaboration et al. | 2004
- 1613
-
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking FaultsSkromme, B. J. / Chen, L. / Mikhov, M. K. / Yamane, H. / Aoki, M. / DiSalvo, F. J. et al. | 2004
- 1617
-
An Ab Initio Study of Intrinsic Stacking Faults in GaNIwata, H. P. / Oberg, S. / Briddon, P. R. et al. | 2004
- 1621
-
AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut™ TechnologyLarheche, H. / Faure, B. / Richtarch, C. / Letertre, F. / Langer, R. / Bove, P. et al. | 2004
- 1625
-
Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V MeasurementsAubry, R. / Jacquet, J. C. / Dua, C. / Gerard, H. / Dessertenne, B. / di Forte-Poisson, M. A. / Cordier, Y. / Delage, S. L. et al. | 2004
- 1629
-
High CW Power 0.3 mum Gate AlGaN/GaN HEMTs Grown by MBE on SapphireDesmaris, V. / Eriksson, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 1633
-
Self-Aligned N+ Polysilicon-Gate GaN MOSFETsMatocha, K. / Chow, T. P. / Gutmann, R. J. et al. | 2004
- vii
-
Preface| 2004
-
Sponsors| 2004
-
Committees| 2004
-
Overview| 2004