A New Method for In-Line Measurement of the Dielectric Constant of Low-k Films (English)
- New search for: Pamler, W.
- New search for: Schrenk, M.
- New search for: Materials Research Society
- New search for: Pamler, W.
- New search for: Schrenk, M.
- New search for: Melnick, B. M.
- New search for: Materials Research Society
In:
Advanced metallization conference; AMC 2002
;
595-600
;
2003
-
ISBN:
- Conference paper / Print
-
Title:A New Method for In-Line Measurement of the Dielectric Constant of Low-k Films
-
Contributors:
-
Conference:Advanced metallization conference; AMC 2002 ; 2002 ; San Diego, CA
-
Published in:ADVANCED METALLIZATION CONFERENCE IN ; 595-600
-
Publisher:
- New search for: Materials Research Society,
-
Place of publication:Warrendale, PA:
-
Publication date:2003-01-01
-
Size:6 pages
-
Remarks:Includes bibliographic references and index
-
ISBN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
3D-Integration: Trends and Opportunities-An OverviewThomas, S. / Materials Research Society et al. | 2003
- 13
-
Recent Advances for Nano Interconnects: Conductor Reliability and ResistivitySchindler, G. / Steinhogl, W. / Steinlesberger, G. / Traving, M. / Engelhardt, M. / Materials Research Society et al. | 2003
- 21
-
Interconnect Issues for Integrated MEMS TechnologyKing, T.-J. / Howe, R. T. / Eyoum, M.-A. / Bhave, S. A. / Materials Research Society et al. | 2003
- 29
-
3D Wafer Stacking TechnologyList, S. / Webb, C. / Kim, S. / Materials Research Society et al. | 2003
- 37
-
3D Interconnects Using Cu Wafer Bonding: Technology and ApplicationsReif, R. / Tan, C. S. / Fan, A. / Chen, K.-N. / Das, S. / Checka, N. / Materials Research Society et al. | 2003
- 45
-
Processing of Inter-Wafer Vertical Interconnects in 3D ICsLu, J.-Q. / Lee, K. W. / Kwon, Y. / Rajagopalan, G. / McMahon, M. / Altemus, B. / Gupta, M. / Eisenbraun, E. / Xu, B. / Jindal, A. et al. | 2003
- 53
-
Face-to-Face Chip Integration With Full Metal InterfaceHuebner, H. / Ehrmann, O. / Eigner, M. / Gruber, W. / Klumpp, A. / Merkel, R. / Ramm, P. / Roth, M. / Weber, J. / Wieland, R. et al. | 2003
- 59
-
Application of a Global-Local Random-Walk Algorithm for Thermal Analysis of 3D Integrated CircuitsKalyanasundharam, J. / Iverson, R. B. / Thompson, E. T. / Prasad, V. / Cale, T. S. / Gutmann, R. J. / Le Coz, Y. L. / Materials Research Society et al. | 2003
- 67
-
Wire Bonding Failure Mechanisms and Simulations of Cu Low-k IMD Chip PackagingHuang, T. C. / LiangB, M. S. / Chao, T. T. / Lee, T. L. / Chen, S. C. / Hsia, C. / Liang, M. S. / Materials Research Society et al. | 2003
- 75
-
Time-Modulated Cu-Plating Technique for Fabricating High-Aspect-Ratio Vias for Three-Dimensional Stacked LSI SystemYonemura, H. / Tomisaka, M. / Hoshino, M. / Takahashi, K. / Kadota, H. / Materials Research Society et al. | 2003
- 83
-
Cu CMP Using Fixed Abrasive (FX-CMP) for Damascene InterconnectionKatagiri, S. / Yamaguchi, U. / Kaise, M. / Kondo, S. / Kanai, F. / Honda, M. / Yamada, N. / Materials Research Society et al. | 2003
- 89
-
A Robust CMP Process for Sub-0.13 mum Copper/Low-k InterconnectsTsai, T. C. / Hu, S. C. / Fang, L. Y. / Hsu, C. L. / Hsu, S. H. / Lin, Z. H. / Yang, F. / Yu, A. / Lin, M. H. / Chen, H. C. et al. | 2003
- 95
-
Galvanic Corrosion Testing of WC~xN~y Barrier Metal in H~2O~2 Based SlurriesErnur, D. / Schuhmacher, J. / Terzieva, V. / Shamiryan, D. / Maex, K. / Materials Research Society et al. | 2003
- 103
-
Investigation of Oxidizer in Liner Slurry on Copper Chemical-Mechanical Polishing for Advanced BEOL InterconnectionsHsu, C.-L. / Tsai, T.-C. / Lin, M.-H. / Chen, H.-C. / Huang, C.-C. / Hsieh, W.-Y. / Yen, P.-W. / Materials Research Society et al. | 2003
- 109
-
An Integrated Multiscale Mechanical Model for Chemical Mechanical PlanarizationSeok, J. / Sukam, C. P. / Kim, A. T. / Tichy, J. A. / Cale, T. S. / Materials Research Society et al. | 2003
- 115
-
Fundamental Study of Low Friction Cu Abrasive-Free PolishingYamada, Y. / Konishi, N. / Hirai, O. / Materials Research Society et al. | 2003
- 121
-
Cu-CMP Corrosion Control Technique Using Gas Dissolved WaterMatsui, Y. / Miyashita, N. / Yoda, T. / Materials Research Society et al. | 2003
- 127
-
Interface Reliability of High Performance InterconnectsGoldberg, C. / Freeman, M. / Kirksey, S. / Sieloff, D. / Filipiak, S. / Mercado, L. / Braeckelmann, G. / Junker, K. H. / Grove, N. / Pozder, S. et al. | 2003
- 139
-
Scaling Rule for Electromigration in Cu Dual-Damascene Interconnects on WHu, C.-K. / Gignac, L. / Malhotra, S. G. / Liniger, E. / Stamper, A. K. / Materials Research Society et al. | 2003
- 147
-
Fundamentals and Improvements of Line-to-Line Breakdown Reliability in Copper Damascene ProcessLi, L. J. / Wu, Z. C. / Chen, B. T. / Lu, Y. C. / Chang, W. / Jang, S. M. / Liang, M. S. / Materials Research Society et al. | 2003
- 155
-
Voiding in Cu Dual Damascene Metallization Due to Cu Densification During Thermal StressRoussel, C. / Kordic, S. / Sicardy, O. / Ignat, M. / Dumas, L. / Orain, S. / Barbe, J. C. / Materials Research Society et al. | 2003
- 161
-
Geometrical Aspects of Stress-Induced Voiding in Copper Interconnectsvon Glasow, A. / Fischer, A. H. / Hierlemann, M. / Penka, S. / Ungar, F. / Materials Research Society et al. | 2003
- 169
-
The Effect of Line Length on the Electromigration Reliability of Cu InterconnectsHau-Riege, C. S. / Marathe, A. P. / Pham, V. / Materials Research Society et al. | 2003
- 177
-
Evaluation of Interface Adhesion of Thin Film Layers by Four-Point Bending TestChang, S. Y. / Jang, S. M. / Lin, S. J. / Yu, C. H. / Liang, M. S. / Materials Research Society et al. | 2003
- 185
-
Yield Study of Cu/Black Diamond Dual Damascene Interconnects Using Burn-InBu, X. / Huang, N. Y. / Guo, Q. / Krishnamoorthy, A. / Materials Research Society et al. | 2003
- 191
-
Resistance Degradation Profile in Electromigration of Dual-Damascene Cu InterconnectsGuo, Q. / Krishnamoorthy, A. / Huang, N. Y. / Foo, P. D. / Materials Research Society et al. | 2003
- 197
-
The Numerical Analysis of Copper Transport in SiO~2 During Bias Temperature Stress TestKim, K.-S. / Kwon, J.-Y. / Joo, Y.-C. / Kim, K.-B. / Materials Research Society et al. | 2003
- 203
-
Comparison of Copper Interconnect Electromigration Behaviors in Various Low-k Materials for 0.13 mum TechnologyLin, M. H. / Yang, G. S. / Wu, C. Y. / Lin, C. C. / Yeh, M. S. / Lin, Y. L. / Chang, K. P. / Chen, J. K. / Liang, A. / Wang, T. et al. | 2003
- 209
-
Adhesion Evaluation by Nanoscratch Method in Stacked Thin Film StructuresNasuno, T. / Kojima, N. / Kaji, N. / Tokitoh, S. / Shimanuki, J. / Ye, J. / Ogawa, S. / Materials Research Society et al. | 2003
- 215
-
3D Coupled Simulation of Electromigration in Copper-Low-k Multilevel InterconnectSukharev, V. / Park, C. W. / Choudhury, R. / Materials Research Society et al. | 2003
- 221
-
Thermal Induced Failure of Organic Low-k/Cu Multilevel InterconnectYeh, M.-S. / Hsiung, C. S. / Yen, P. W. / Materials Research Society et al. | 2003
- 227
-
A Study of Via Bottom Profile on Via Failure in Multi-Level Cu InterconnectionSon, J.-H. / Hah, S.-R. / Chung, J.-H. / Park, B.-K. / Shin, C.-H. / Chung, J.-S. / Kim, H.-S. / Park, K.-M. / Materials Research Society et al. | 2003
- 233
-
Electromigration Reliability Study of Self-Ionized Plasma Barriers for Dual Damascene Cu MetallizationLin, J. C. / Park, S. K. / Pfeifer, K. / Augur, R. / Blaschke, V. / Shue, S. L. / Yu, C. H. / Liang, M. S. / Materials Research Society et al. | 2003
- 239
-
A Comparison of CVD TiN(Si) and PVD Ta Metal Barriers Using a Novel Metal Barrier Reliability Test StructureBook, G. W. / Smith, S. / Pfeifer, K. / Materials Research Society et al. | 2003
- 243
-
Influence of Sample Preparation on Interfacial Adhesion Energy Using the Four-Point Bend TechniqueEngbrecht, E. R. / Smith, S. / Pfeifer, K. / Materials Research Society et al. | 2003
- 249
-
Electromigration Characteristics and Characterization of Multilevel Cu InterconnectsKawasaki, H. / Materials Research Society et al. | 2003
- 259
-
Time-Dependent Dielectric-Constant Increase-Novel Criteria for Low-k Materials ReliabilityRyuzaki, D. / Ishida, T. / Furusawa, T. / Materials Research Society et al. | 2003
- 265
-
Influence of Metal Electrodes on Leakage Current in MSQ Films With or Without PoresSasaki, N. / Oda, T. / Kikkawa, T. / Materials Research Society et al. | 2003
- 273
-
Characterization of Porous Low-k Dielectrics by Gas Adsorption TechniquesNegoro, C. / Hata, N. / Yamada, K. / Zhou, H. S. / Kikkawa, T. / Materials Research Society et al. | 2003
- 279
-
Off- and On-Time Dependences of Electromigration MTF in Pulsed DC Stressing TestsShingubara, S. / Miyazaki, S. / Sakaue, H. / Takahagi, T. / Materials Research Society et al. | 2003
- 285
-
Extraction of Interconnect-Length-Distribution Parameters From CAD DataNakashima, H. / Takagi, N. / Masu, K. / Materials Research Society et al. | 2003
- 291
-
Derivation of Film Characteristics and Prediction of Electromigration Failure in Passivated Polycrystalline LineSasagawa, K. / Hasegawa, M. / Saka, M. / Abe, H. / Materials Research Society et al. | 2003
- 297
-
Transmission Line Interconnect Structure in Si ULSIIto, H. / Shinoki, H. / Yokoyama, Y. / Masu, K. / Materials Research Society et al. | 2003
- 305
-
Reliability of Copper Inlaid Structures-Geometry and Microstructure EffectsZschech, E. / Geisler, H. / Zienert, I. / Prinz, H. / Langer, E. / Meyer, A. M. / Schneider, G. / Materials Research Society et al. | 2003
- 313
-
Impact of Post ECD Anneal on Copper Layer PropertiesMourier, T. / Moreau, F. / Maitrejean, S. / Morel, T. / Materials Research Society et al. | 2003
- 321
-
Grain Formation During Polycrystalline Thin Film GrowthBloomfield, M. O. / Im, Y. H. / Huang, H. / Cale, T. S. / Materials Research Society et al. | 2003
- 329
-
Cobalt Alloy Thin Films for Encapsulation of CopperGandikota, S. / Padhi, D. / Ramanathan, S. / McGuirk, C. / Naik, M. / Parikh, S. / Musaka, K. / Yahalom, J. / Dixit, G. / Materials Research Society et al. | 2003
- 337
-
Electrodeposition of Copper-Tin Alloy Films for Enhancement of Electromigration and Stress Migration Resistance in ULSI EraPadhi, D. / McGuirk, C. / Nguyen, H. B. / Ramanathan, S. / Gandikota, S. / Musaka, K. / Parikh, S. / Dixit, G. / Materials Research Society et al. | 2003
- 345
-
Resistivity of Ultra-Narrow Cu Interconnects Fabricated With Electron Beam LithographyWu, W. / Jonckheere, R. / Tokei, Z. / Stucchi, M. / Struyf, H. / Vos, I. / Bender, H. / Maex, K. / Materials Research Society et al. | 2003
- 349
-
Advanced Electroless Ag-W Thin Films for ULSI MetallizationBogush, V. / Inberg, A. / Croitoru, N. / Dubin, V. / Shacham-Diamand, Y. / Materials Research Society et al. | 2003
- 355
-
Deposition of Platinum Thin Films by MOCVD Using a Direct Liquid Injection SystemValet, O. / Doppelt, P. / Baumann, P. K. / Schumacher, M. / Guillon, H. / Materials Research Society et al. | 2003
- 361
-
Effects of the Leveler Component on Gap Filling Profiles for the Copper Damascene Electroplating ProcessHaba, T. / Itabashi, T. / Akahoshi, H. / Miyazaki, H. / Materials Research Society et al. | 2003
- 367
-
Pattern Density Effects on Film Profile Evolution During ECDIm, Y. H. / Bloomfield, M. O. / Sen, S. / Cale, T. S. / Materials Research Society et al. | 2003
- 373
-
Overcoming Terminal Effects During Electrochemical Deposition of Copper Films for 300 mm Damascene Interconnect ApplicationsKlocke, J. / McHugh, P. / Wilson, G. / Ritari, K. / Roberts, M. / Ritzdorf, T. / Materials Research Society et al. | 2003
- 379
-
Electrochemical Deposition and Characterization of High Performance CuAg-Thin Film Metallizations for Interconnects and SAW-ElectrodesMenzel, S. / Strehle, S. / Herrmann, M. / Schlorb, H. / Wendrock, H. / Wetzig, K. / Materials Research Society et al. | 2003
- 385
-
Enhancement of Contact Filling Characteristics in CVD-Al Metallization With Plasma-Treated MOCVD-TiN Wetting LayerSeo, J. H. / Kim, B. H. / Yun, J. Y. / Kang, S. B. / Choi, G. H. / Chung, U. I. / Moon, J. T. / Materials Research Society et al. | 2003
- 391
-
Surface and Grain Boundary Scattering: A Modeling Study of the Electrical Resistivity in Sub-50 nm Copper LinesSteinhogl, W. / Schindler, G. / Steinlesberger, G. / Traving, M. / Engelhardt, M. / Materials Research Society et al. | 2003
- 397
-
Microstructure of Cu Damascene Nano-InterconnectsSteinlesberger, G. / Steinhogl, W. / Schindler, G. / Traving, M. / Engelhardt, M. / Bertagnolli, E. / Materials Research Society et al. | 2003
- 403
-
Copper Seed Layer Scaling for Advanced Interconnects: Extendibility of I-PVDTokei, Z. / Demuynck, S. / Vervoort, I. / Mebarki, B. / Mandrekar, T. / Guggilla, S. / Maex, K. / Materials Research Society et al. | 2003
- 409
-
Chemical Fluid Deposition of Copper FilmsCabanas, A. / Watkins, J. J. / Materials Research Society et al. | 2003
- 415
-
Effects of Underlying Dielectrics on Properties and Reliability of Cu-Based Metallization SystemOu, K.-L. / Wu, W.-F. / Chou, C.-P. / Tu, Y.-C. / Ting, C.-Y. / Wan, B.-Z. / Materials Research Society et al. | 2003
- 421
-
Bulk CVD Tungsten and Pulsed Nucleation Layer Tungsten Deposition Methods and the Impact on Film Conformality, Crystallography, Microstructure and Chemical Mechanical Planarization Removal Rate of TungstenSimpson, D. L. / Houge, E. / Lippitt, M. / Maynard, R. / Vartuli, C. / Merchant, S. M. / Subramanian, K. / Chae, M. / D Couto, G. C. / Fellis, A. et al. | 2003
- 427
-
Selective Silicidation of Cobalt Using SiH~4, and Si~2H~6 for Cu MetallizationHirai, R. / Noda, S. / Komiyama, H. / Shimogaki, Y. / Materials Research Society et al. | 2003
- 433
-
Integration of CVD Cu Seed With CVD Cu Barrier for Dual Damascene Cu MetallizationPark, S. / Pfeifer, K. / Shibagaki, M. / Sekiguchi, A. / Koide, T. / Kuninobu, T. / Akiyama, S. / Min, W. S. / Pyo, S. G. / Materials Research Society et al. | 2003
- 439
-
The Effects of Chlorine in Contact Resistance of TiSi~2 Films Deposited by PECVD-Ti in Tungsten Bit-Line Stud ProcessMoon, K. J. / Park, H. S. / Lee, M. B. / Kim, H. S. / Yang, S. G. / Kim, S. B. / Choi, G. H. / Chung, U. I. / Moon, J. T. / Materials Research Society et al. | 2003
- 445
-
Al-CVD Technology Using MPA [methylpyrrolidine alane]Masu, K. / Sakamoto, M. / Lee, J. I. / Furuta, K. / Hatanaka, M. / Takahashi, Y. / Ishikawa, M. / Furumura, Y. / Materials Research Society et al. | 2003
- 451
-
Sequential Flow Deposition (SFD) of W Nucleation Layer Using Si~2H~6, B~2H~6 and SiH~4 Reduction Gases for W PlugMizoguchi, Y. / Suzuki, K. / Tachibana, M. / Abe, D. / Materials Research Society et al. | 2003
- 457
-
In Situ Cleaning Solution to High Via Resistance Issue on Floating Metal PatternOgasawara, H. / Sakou, K. / Takahashi, M. / Kageyama, M. / Miyakawa, Y. / Materials Research Society et al. | 2003
- 463
-
Copper Deposition Characteristics From a Supercritical CO~2 FluidKondoh, E. / Materials Research Society et al. | 2003
- 471
-
Productization of Cu/Low-k at the 130 and 90 nm Technology NodesSanchez, H. / Melnick, B. / Smith, B. / Materials Research Society et al. | 2003
- 485
-
0.13 mum Generation Integration and Manufacturing of Dual Damascene Copper in FSGStamper, A. K. / Adams, C. / Chen, X. / Christiansen, C. / Cooney, E. / Cote, W. / Gambino, J. / Gill, J. / Luce, S. / McDevitt, T. et al. | 2003
- 493
-
Robust Low-k SiOC Integration in Cu Dual Damascene Interconnect for 90 nm Node SoC TechnologyMatsuura, M. / Nishioka, Y. / Matsumoto, S. / Goto, K. / Satake, T. / Yuasa, H. / Okazaki, G. / Tomita, K. / Hashimoto, K. / Tomohisa, S. et al. | 2003
- 501
-
A Study on the Integration of Organosilicate Glasses for Advanced Copper/Low-k InterconnectionsFang, L.-Y. / Chen, H.-C. / Hu, S.-C. / Wang, C.-M. / Wu, J.-Y. / Hsieh, W.-Y. / Yew, T.-R. / Materials Research Society et al. | 2003
- 507
-
Modified Silica Xerogel as a Low-k Dielectric With Improved Mechanical PropertiesFruehauf, S. / Streiter, A. / Puschmann, R. / Schulz, S. E. / Himcinschi, C. / Flannery, C. M. / Gessner, T. / Zahn, D. R. T. / Materials Research Society et al. | 2003
- 513
-
Demonstration of Dual Damascene 0.18 mum Cu/Black Diamond IntegrationKrishnamoorthy, A. / Bu, X. / Guo, Q. / Bliznetsov, V. / Materials Research Society et al. | 2003
- 519
-
Dielectric Bottom Anti-Reflective Coatings for the Patterning of Organosilicate Dual Damascene StructuresKumar, R. / Wong, T. K. S. / Singh, N. / Materials Research Society et al. | 2003
- 525
-
Process Challenges for Integrating Copper With SiLK DielectricGambino, J. / Adams, C. / Chen, X. / Christiansen, C. / Cooney, E. / Cote, W. / Chung, D. / DeVries, K. / Gibson, M. / Gill, J. et al. | 2003
- 531
-
A Sacrificial Al-Seed Cu-Plating Technology for Cu Line-Pillar/STP SchemeShishiguchi, S. / Fukuda, T. / Yanazawa, H. / Kochiya, H. / Kolics, A. / Petrov, N. / Ivanov, I. / Materials Research Society et al. | 2003
- 537
-
An Imprint-Damascene Process for Cu/Low-k InterconnectsKondo, S. / Anzai, Y. / Terao, M. / Ryuzaki, D. / Kodama, D. / Furusawa, T. / Materials Research Society et al. | 2003
- 543
-
Influence of Si Substrate Ground on Antenna Transmission Gain for On-Chip Wireless InterconnectsWatanabe, S. / Rashid, A. B. M. H. / Kikkawa, T. / Materials Research Society et al. | 2003
- 551
-
Fluorocarbon Etching of Porous Silicon Dioxide: Plasma Chemistry and Surface KineticsSankaran, A. / Vasenkov, A. V. / Kushner, M. J. / Materials Research Society et al. | 2003
- 557
-
A New Method of Cleaning Cu/Organic Low-K InterconnectFang, S. / Wong, K. / Yang, C.-C. / Clevenger, L. / Materials Research Society et al. | 2003
- 563
-
A Novel Ultra Tough Organic Low-k Film With a Highly Cross-Linked Low Density StructureAoi, N. / Fukuda, T. / Yanazawa, H. / Kato, T. / Saito, H. / Materials Research Society et al. | 2003
- 569
-
Determining Dielectric Constant Variation of SiOC Low-k Film Using Density MeasurementLi, W. / Yin, Z. / Sandhu, G. S. / Wilby, R. J. / Materials Research Society et al. | 2003
- 575
-
Preparation of Damascene Trench Sidewalls in CVD Nano-Porous Ultra Low-k (k = 2.2) Films for Compatibility With MOCVD Diffusion BarriersDonohue, H. / Yeoh, J.-C. / Burgess, S. / Buchanan, K. / Materials Research Society et al. | 2003
- 583
-
High-k MIM Capacitor Using ZrO~2 for RF ApplicationDoan, M. T. / Sreeranganathan, A. / Tang, L. J. / Foo, P. D. / Materials Research Society et al. | 2003
- 589
-
Improvement of Film Properties by Plasma Modification of a Porous Low-k Organosilicate Glass MaterialKastenmeier, B. E. E. / Ahlburn, B. T. / Gallagher, M. / Gidley, D. / Lee, J. / Materials Research Society et al. | 2003
- 595
-
A New Method for In-Line Measurement of the Dielectric Constant of Low-k FilmsPamler, W. / Schrenk, M. / Materials Research Society et al. | 2003
- 601
-
Effects of Supercritical Processing on Ultra Low-k FilmsReidy, R. F. / Gorman, B. P. / Orozco-Teran, R. A. / Zhang, Z. / Chang, S. / Mueller, D. W. / Materials Research Society et al. | 2003
- 607
-
Processing of Ultra-Low-k Xerogel Composite FilmsGorman, B. P. / Chang, S. / Mueller, D. W. / Reidy, R. F. / Materials Research Society et al. | 2003
- 613
-
Experimental Determination of the Effective Relative Permittivity of Copper/Low-epsilon~r Dual Damascene Integrated StructuresShaviv, R. / Yu, Y. / Mountsier, T. / Alers, G. / Sanganeria, M. K. / Shoda, N. / Ray, G. W. / van Schravendijk, B. / Materials Research Society et al. | 2003
- 619
-
Study of Process Impact on Low-k Dielectric in Copper Dual Damascene Interconnect ProcessTsai, C.-Y. / Yang, N.-H. / Hsieh, W.-Y. / Yen, P.-W. / Materials Research Society et al. | 2003
- 625
-
Integratibility Evaluation of Ultra-Low-k Dielectric Material for 65 nm TechnologyTseng, C. H. / Liu, C. C. / Hsieh, T. T. / Chiang, Y. F. / Chen, J. M. / Hsieh, W. Y. / Yen, P. W. / Materials Research Society et al. | 2003
- 629
-
Integration of Plasma Deposited CF Polymer in a Copper/Low-k Damascene ArchitectureUhlig, M. / Bertz, A. / Brocke, H. / Dobler, M. / Flannery, C. / Jnawali, G. / Zeidler, D. / Gessner, T. / Materials Research Society et al. | 2003
- 637
-
How to Eliminate Voiding in Porous Low-k Dielectrics and the Mechanism of Void FormationLin, J. C. / Augur, R. A. / Daniels, B. J. / Shue, S. L. / Yu, C. H. / Liang, M. S. / Materials Research Society et al. | 2003
- 643
-
Dielectric Constant and Young's Modulus of Organic Low-k Materials Calculated by Molecular Orbital MethodUera, K. / Kawahara, J. / Miyoshi, H. / Hata, N. / Kikkawa, T. / Materials Research Society et al. | 2003
- 649
-
A Novel Porous Silica Film for Cu/Low-k Multilevel InterconnectsNakahira, J. / Suzuki, K. / Iba, Y. / Sugiura, I. / Nakata, Y. / Fukuyama, S.-i. / Yano, E. / Ohba, T. / Materials Research Society et al. | 2003
- 655
-
Effects of Stress Controlled by SiF~4 Flow Rate and Temperature on HDP-FSG/PE-SiN Interface Delamination in 64-bit RISC MicroprocessorOh, H.-S. / Hah, S.-R. / Chung, J.-H. / Park, D.-G. / Lee, J.-W. / Kang, K.-H. / Park, B.-L. / Lee, S.-G. / Park, K.-M. / Materials Research Society et al. | 2003
- 661
-
STP With Low-k Polymer SiLK ResinShimokawa, K. / Shishiguchi, S. / Fukuda, T. / Yanazawa, H. / Materials Research Society et al. | 2003
- 665
-
Organometallic Hf and Si Precursors for Hf~1~-~xSi~xO~2 Thin Film FormationIshikawa, M. / Kada, T. / Machida, H. / Ogura, A. / Ohshita, Y. / Materials Research Society et al. | 2003
- 671
-
Curing Process Window for MSQ Based Low-k DielectricsChou, T. J. / Chang, S. Y. / Chen, Y. H. / Lee, S. N. / Jang, S. M. / Yu, C. H. / Liang, M. S. / Materials Research Society et al. | 2003
- 677
-
Quantum Chemical Study on Dielectric Constants of Siloxane and Its DerivativesAdachi, T. / Yamashita, K. / Materials Research Society et al. | 2003
- 685
-
Atomic-Layer Deposition Processes for Nanoscale Copper Metallizationvan der Straten, O. / Zhu, Y. / Eisenbraun, E. / Kaloyeros, A. E. / Materials Research Society et al. | 2003
- 693
-
Atomic Layer Deposited Aluminum Oxide (Al~2O~3): A Promising Dielectric for Metal Insulator Metal Capacitors (MIMCAPS)Schrenk, M. / Allers, K.-H. / Gschwandtner, A. / Koller, K. / Koerner, H. / Materials Research Society et al. | 2003
- 701
-
Electrical and Physical Characterization of Atomic Layer Deposited Thin Films for Copper Barrier ApplicationsSvedberg, L. / Prindle, C. / Brennan, B. / Lee, J. J. / Guenther, T. / Ryan, T. / Junker, K. / Grove, N. / Jiang, J. / Denning, D. et al. | 2003
- 709
-
Improving Pulse Protocols in Atomic Layer DepositionPrasad, V. / Gobbert, M. K. / Bloomfield, M. / Cale, T. S. / Materials Research Society et al. | 2003
- 717
-
Precursor Penetration and Sealing of Porous CVD SiCOH Low-k Dielectric for Atomic Layer Deposition of WC~xN~y BarrierAbell, T. / Shamiryan, D. / Schuhmacher, J. / Besling, W. / Sutcliffe, V. / Maex, K. / Materials Research Society et al. | 2003
- 725
-
Evaluation of ALD TaN Films for Cu Barrier ApplicationsBasceri, C. / Maity, N. / Holtzclaw, K. / Hou, V. D. / Ramarajan, S. / Chopra, D. / Russell, S. W. / Sandhu, G. / Marcadal, C. / Chung, H. et al. | 2003
- 731
-
Surface Chemistry for Halide-Based Atomic Layer Deposition of TantalumLemonds, A. M. / White, J. M. / Ekerdt, J. G. / Materials Research Society et al. | 2003
- 737
-
Development of Atomic Layer Deposition TiN as Electrodes of Metal-Insulator-Metal CapacitorWu, D. / Lin, K.-Y. / Chao, L. L. / Yu, C. Y. / Lo, C. H. / Tsai, C. S. / Wang, C. / Materials Research Society et al. | 2003
- 745
-
Nanocrystalline Conformal Diffusion Barriers for Copper MetallizationEizenberg, M. / Kohn, A. / Joseph, S. / Materials Research Society et al. | 2003
- 753
-
On the Way to the 2.5 nm Barrier for End-of-Roadmap MPUsTraving, M. / Schindler, G. / Steinlesberger, G. / Steinhogl, W. / Engelhardt, M. / Materials Research Society et al. | 2003
- 759
-
Integration of ALD WCN Into a Dual Damascene Oxide ModuleSchuhmacher, J. / Beyer, G. / Vos, I. / Sutcliffe, V. / Tokei, Z. / Besling, W. / Maex, K. / Materials Research Society et al. | 2003
- 767
-
Comparative Study of Electroless Co(W,P) and Co(Mo,P) Thin Films for Capping and Barrier Layer for Cu MetallizationZylberman, A. / Shacham-Diamand, Y. / Sverdlov, Y. / Petrov, N. / Materials Research Society et al. | 2003
- 775
-
ALD-TaN Thin Films as Diffusion Barrier for Copper MetallizationChoi, K. I. / Kim, B. H. / Kang, S. B. / Choi, G. H. / Chung, U.-I. / Moon, J. T. / Materials Research Society et al. | 2003
- 783
-
The Effectiveness of Barrier Layer Monitoring Using Bias Temperature Stress of MOS CapacitorsKedmi-Bernard, K. / Shacham-Diamand, Y. / Materials Research Society et al. | 2003
- 791
-
Evaluation of Barrier Property Against Heat Treatment and Reliability Characterization of Barriers for Cu InterconnectsSaitoh, T. / Saito, T. / Ishikawa, K. / Noguchi, J. / Miyauchi, M. / Tsugane, K. / Akimori, H. / Kubo, M. / Oshima, T. / Satoh, A. et al. | 2003
- 799
-
CVD TiN Metal Barrier Integrity Underlined by Spectroscopic Ellipsometry Coupled With Solvent AdsorptionChapelon, L.-L. / Jousseaume, V. / Maitrejean, S. / Rochat, N. / Pierre, F. / Haumesser, P.-H. / Mourier, T. / Maury, P. / Remiat, B. / Le Cornec, C. et al. | 2003
- 805
-
Deposition of Ultra Low Carbon Content MOCVD TiN Layers From Thermal Decomposition of TDEAT Co-Reacted With NH~3 and In Situ N~2/H~2 RF Plasma TreatmentBurgess, S. R. / Price, A. / Rich, P. / Opdenacker, P. / Rimmer, N. / MacNeil, J. / Materials Research Society et al. | 2003
- 811
-
Advanced Copper Barrier Dielectric MaterialsGray, W. D. / Loboda, M. J. / Chen, W. / Schneider, R. / Hwang, B. K. / Kim, S. J. / Materials Research Society et al. | 2003
- 817
-
Multilayer Diffusion Barrier Scheme Using a Thin Metal Interlayer (M=Al, Ru, Cr, and Zr) Between TiN Films for Cu MetallizationKim, S.-H. / Nam, K. T. / Datta, A. / Kang, D.-H. / Kim, K.-B. / Materials Research Society et al. | 2003
- 823
-
Reactive Preclean Process Development for Advanced Cu Barrier ApplicationsShahvandi, I. / Prindle, C. / Denning, D. / Svedberg, L. / Garcia, S. / Waidmann, S. / Sharma, B. G. / Materials Research Society et al. | 2003
- 829
-
Barrier Deposition on Porous Low-k FilmsShamiryan, D. / Yanovitskaya, Z. S. / Iacopi, F. / Maex, K. / Materials Research Society et al. | 2003
- 835
-
TiN, TaN, and W~xN as Diffusion Barriers for Cu on SiO~2: Comparison of Capacitance-Voltage, Leakage Current, and Triangular Voltage-Sweep Tests After Bias Temperature StressingKizil, H. / Steinbruchel, C. / Materials Research Society et al. | 2003
- 841
-
Influence of Target Texture on the Deposition of Titanium Films by Long Throw SputteringStreiter, R. / Wolf, H. / Belsky, P. / Tirschler, W. / Giegengack, H. / Urbansky, N. / Gessner, T. / Materials Research Society et al. | 2003
- 847
-
Stability of Graded Ta-TaN-Ta and Single Layer TaSiN Diffusion Barriers for Copper Interconnect SystemsWenger, C. / Hubner, R. / Wenzel, C. / Reinicke, M. / Hecker, M. / Mattern, N. / Wetzig, K. / Baumann, J. / Schulz, S. / Bartha, J. W. et al. | 2003
- 853
-
Process Optimization and Electrical Barrier Performance of Ultrathin Plasma Assisted Chemical Vapor Deposited TaSiN Films for Copper Metallization ApplicationsZeng, W. / Eisenbraun, E. / Kaloyeros, A. / Materials Research Society et al. | 2003
- 859
-
Thermal Stability of Thin Ta and TaN~x Films as Diffusion Barriers for Copper MetallizationZimmermann, S. / Baumann, J. / Kaufmann, C. / Gessner, T. / Materials Research Society et al. | 2003
- 865
-
Tantalum Deposition Process as Diffusion Barrier for Cu Metallization Using New SIS (Self-Ionized Sputter) TechnologyLee, M. G. / Okamura, Y. / Toyoda, S. / Gonohe, N. / Materials Research Society et al. | 2003