ZnO Nanorods for Electronic Nanodevice Applications (Invited) (English)
- New search for: Yi, G. C.
- New search for: Park, W. I.
- New search for: Yoo, J.
- New search for: Kim, H. J.
- New search for: Lee, C. H.
- New search for: Oyo Butsuri Gakkai
- New search for: Yi, G. C.
- New search for: Park, W. I.
- New search for: Yoo, J.
- New search for: Kim, H. J.
- New search for: Lee, C. H.
- New search for: Oyo Butsuri Gakkai
In:
Solid state devices and materials
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236-237
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2006
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ISBN:
- Conference paper / Print
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Title:ZnO Nanorods for Electronic Nanodevice Applications (Invited)
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Contributors:Yi, G. C. ( author ) / Park, W. I. ( author ) / Yoo, J. ( author ) / Kim, H. J. ( author ) / Lee, C. H. ( author ) / Oyo Butsuri Gakkai
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Conference:INTERNATIONAL CONFERENCE, Solid state devices and materials ; 2006 ; Yokohama, Japan
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Published in:Solid state devices and materials ; 236-237SOLID STATE DEVICES AND MATERIALS ; 236-237
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Publisher:
- New search for: The Japan Society of Applied Physics,
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Publication date:2006-01-01
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Size:2 pages
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Remarks:Includes bibliographical references and index.; See same shelfmark for abstracts on CD-ROM shelved in Oriental Section.; ALSO HELD ON CD-ROM
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 8
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Nanowire Field Effect Transistor (Invited)Wernersson, L. E. / Oyo Butsuri Gakkai et al. | 2006
- 10
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Infrared detection with silicon nano transistorsNishiguchi, K. / Ono, Y. / Fujiwara, A. / Yamaguchi, H. / Inokawa, H. / Takahashi, Y. / Oyo Butsuri Gakkai et al. | 2006
- 12
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High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance MicroscopyZhang, L. / Ohuchi, K. / Adachi, K. / Tomita, M. / Ishimaru, K. / Takayanagi, M. / Nishiyama, A. / Oyo Butsuri Gakkai et al. | 2006
- 14
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Imaging of interference between incident and reflected electron waves at an InAs/GaSb heterointerface by low-temperature scanning tunneling spectroscopySuzuki, K. / Kanisawa, K. / Perraud, S. / Ueki, M. / Takashina, K. / Hirayama, Y. / Oyo Butsuri Gakkai et al. | 2006
- 16
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Magnetopiezoresistance effects in an InAs/AlGaSb nanomechanical resonator with extremely small power consumptionMahboob, I. / Okamoto, H. / Ueki, M. / Yamaguchi, H. / Oyo Butsuri Gakkai et al. | 2006
- 18
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Structure, strength and conductance of palladium wires of single atom widthMatsuda, T. / Kizuka, T. / Oyo Butsuri Gakkai et al. | 2006
- 20
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Single Photon Detectors based on Quantum Dot Devices - from Principle of Operation to Single Photon Counting (Invited)Kardynal, B. E. / Hees, S. S. / See, P. / Shields, A. J. / Farrer, I. / Ritchie, D. A. / Oyo Butsuri Gakkai et al. | 2006
- 22
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Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic WavesSogawa, T. / Gotoh, H. / Hirayama, Y. / Saku, T. / Miyashita, S. / Santos, P. V. / Ploog, K. H. / Oyo Butsuri Gakkai et al. | 2006
- 24
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Photon Statistics in a Thick Barrier Coupled Quantum DotYamauchi, S. / Shikanai, A. / Morohashi, I. / Furue, S. / Komori, K. / Sugaya, T. / Takagahara, T. / Oyo Butsuri Gakkai et al. | 2006
- 26
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Exciton Rabi Oscillation in InAs/GaAs Coupled Quantum DotGoshima, K. / Komori, K. / Yamauchi, S. / Morohashi, I. / Sugaya, T. / Oyo Butsuri Gakkai et al. | 2006
- 28
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Study of Basic Characteristics of Spin - Photodiode Consisting of III-V p-n HeterojunctionHayafuji, J. / Kondo, T. / Munekata, H. / Oyo Butsuri Gakkai et al. | 2006
- 30
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Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain ContactSatou, A. / Ryzhii, V. / Otsuji, T. / Shur, M. S. / Oyo Butsuri Gakkai et al. | 2006
- 32
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Control of Light Emission and Propagation in Semiconductor Photonic Nanostructures (Invited)Baba, T. / Oyo Butsuri Gakkai et al. | 2006
- 34
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All-Optical Switching and Control of Silicon Photonic Crystal Nanocavities (Invited)Notomi, M. / Kuramochi, E. / Tanabe, T. / Taniyama, H. / Shinya, A. / Oyo Butsuri Gakkai et al. | 2006
- 36
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Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room TemperatureNomura, M. / Iwamoto, S. / Watanabe, K. / Kumagai, N. / Nakata, Y. / Ishida, S. / Arakawa, Y. / Oyo Butsuri Gakkai et al. | 2006
- 38
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Modified Luminescence from Germanium Self-assembled Quantum Dots in Photonic Crystal Cavity at Room TemperatureXia, J. / Usami, N. / Ikegami, Y. / Nakata, Y. / Shiraki, Y. / Oyo Butsuri Gakkai et al. | 2006
- 40
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Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated SurfacesGelloz, B. / Koshida, N. / Oyo Butsuri Gakkai et al. | 2006
- 42
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Integrated Photonic Network Node-Chip with Photonic Crystals (Invited)Yamada, H. / Chu, T. / Gomyo, A. / Uchida, J. / Ishida, S. / Arakawa, Y. / Oyo Butsuri Gakkai et al. | 2006
- 44
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Compact Multi-Mode Optical Ring Resonators for Interconnection on Si ChipsTanushi, Y. / Yokoyama, S. / Oyo Butsuri Gakkai et al. | 2006
- 46
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Silicon Optical Modulators in Silicon-on-Insulator (SOI) Substrate Based on the p-i-n Waveguide StructureHsu, M. T. / Chuang, R. W. / Oyo Butsuri Gakkai et al. | 2006
- 48
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Low Temperature Fabrication of Monolithic Mach-Zehnder Optical Modulator on Silicon using Sputtered (Ba,Sr)TiO~3 and Mechanism of Transient ResponseSuzuki, M. / Nagata, K. / Tanushi, Y. / Yokoyama, S. / Oyo Butsuri Gakkai et al. | 2006
- 50
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Light emission from two junction Si CMOS LED's (450nm - 750nm) with two order increase in emission intensity-Applications for next generation silicon-based optoelectronicsSnyman, L. W. / Plessis, M. d. / Aharoni, H. / Oyo Butsuri Gakkai et al. | 2006
- 52
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Low-Voltage Operated Piezoelectric Tunable Capacitor for Reconfigurable RF Systems (Invited)Kawakubo, T. / Nagano, T. / Nishigaki, M. / Itaya, K. / Oyo Butsuri Gakkai et al. | 2006
- 54
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MEMS Packaging for RF Switch (Invited)Seki, T. / Oyo Butsuri Gakkai et al. | 2006
- 56
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A Capacitive-Sensing Scheme for Control of Adaptive MEMS Device Stacked on CMOS LSIShimamura, T. / Morimura, H. / Kuwabara, K. / Sato, N. / Terada, J. / Ugajin, M. / Shigematsu, S. / Machida, K. / Nakanishi, M. / Ishii, H. et al. | 2006
- 58
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Equivalent Circuit Model for On-Chip Variable InductorYammouch, T. / Ishida, K. / Okada, K. / Masu, K. / Oyo Butsuri Gakkai et al. | 2006
- 60
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On-Chip Asymmetric Coaxial Waveguide Structure for Chip Area ReductionLai, I. C. H. / Tanimoto, H. / Fujishima, M. / Oyo Butsuri Gakkai et al. | 2006
- 62
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On-Die Monitoring of Substrate Coupling for Mixed-Signal Circuit IsolationKosaka, D. / Fujiwara, M. / Danjo, T. / Nagata, M. / Oyo Butsuri Gakkai et al. | 2006
- 64
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60% Power Reduction in Inductive-Coupling Inter-Chip Link by Current-Sensing TechniqueNiitsu, K. / Miura, N. / Inoue, M. / Nakagawa, Y. / Tago, M. / Fukaishi, M. / Ishikuro, H. / Kuroda, T. / Oyo Butsuri Gakkai et al. | 2006
- 66
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Inter-chip Transmission Characteristics of Meander Dipole Antennas Integrated in 0.18 mum CMOS UWB Transceiver ChipsKimoto, K. / Sasaki, N. / Nitta, M. / Fukuda, M. / Kikkawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 68
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On-Chip Yagi Antenna for Wireless Signal Transmission in Stacked MCPOhashi, K. / Yammouch, T. / Kimura, M. / Ito, H. / Okada, K. / Ishida, K. / Itoi, K. / Sato, M. / Ito, T. / Masu, K. et al. | 2006
- 70
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A Single-chip Ultra-Wideband Receiver using Silicon Integrated Antennas for Inter-chip Wireless InterconnectionSasaki, N. / Fukuda, M. / Nitta, M. / Kimoto, K. / Kikkawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 72
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A 0.18 mum CMOS Impulse Radio Based UWB Transmitter for Global Wireless Interconnections of 3D Stacked-Chip SystemFukuda, M. / Saha, P. K. / Sasaki, N. / Nitta, M. / Kikkawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 74
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Highly Efficient Carrier Injection and Transport in Organic Light Emitting Diodes (Invited)Adachi, C. / Matsushima, T. / Oyo Butsuri Gakkai et al. | 2006
- 76
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Top emission organic light emitting diodes with double metal layer anodeTsai, C. R. / Juang, F. S. / Ji, L. W. / Tsai, Y. S. / Liu, C. C. / Oyo Butsuri Gakkai et al. | 2006
- 78
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The Experiment and Simulation Study Top Emission PLEDs Using LiF/Ag/ITO CathodeTeng, C. W. / Lu, Y. H. / Tsai, Y. C. / Chang, K. Y. / Chou, S. H. / Liu, K. C. / Chen, L. C. / Fang, Y. C. / Huang, H. E. / Oyo Butsuri Gakkai et al. | 2006
- 80
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Simulation for double ultra-thin separately doped red organic light-emitting diodeWang, S. H. / Li, T. S. / Juang, F. S. / Tsai, Y. S. / Oyo Butsuri Gakkai et al. | 2006
- 82
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Black film improving the contrast ratio of organic light emitting diodesWu, Y. L. / Lin, Y. C. / Juang, F. S. / Su, Y. K. / Oyo Butsuri Gakkai et al. | 2006
- 84
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TFT Technologies for Flexible Displays (Invited)Jang, J. / Oyo Butsuri Gakkai et al. | 2006
- 86
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Efficient Red Electrophosphorescent Devices Based on Iridium Complexes of Fluorinated 1-phenylisoquinolinePark, G. Y. / Seo, J. H. / Yoo, D. I. / Kim, Y. K. / Kim, Y. S. / Ha, Y. / Oyo Butsuri Gakkai et al. | 2006
- 88
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Efficiency improvement in flexible phosphorescent organic light-emitting diodeSu, S. Y. / Tsai, Y. S. / Juang, F. S. / Ji, L. W. / Wang, S. H. / Su, Y. K. / Oyo Butsuri Gakkai et al. | 2006
- 90
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Energy Transfer Employing Europium Complex and Blue Phosphorescent Dye and Application for White Organic Light-Emitting DiodesHino, Y. / Kajii, H. / Ohmori, Y. / Oyo Butsuri Gakkai et al. | 2006
- 92
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Formation of bulk-heterojunction structure in organic bilayer solar cells by heat treatmentOsasa, T. / Yamamoto, S. / Matsumura, M. / Oyo Butsuri Gakkai et al. | 2006
- 94
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Build-on Technology of Bi-Directional Optical Communication System using Bi-Functional Organic DiodesOkada, H. / Matsushita, Y. / Naka, S. / Onnagawa, H. / Oyo Butsuri Gakkai et al. | 2006
- 96
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Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone DopingNakano, Y. / Noda, K. / Fujikawa, H. / Morikawa, T. / Ohwaki, T. / Oyo Butsuri Gakkai et al. | 2006
- 98
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InP-based High-speed Transistors and their IC Applications (Invited)Murata, K. / Sano, K. / Fukuyama, H. / Kosugi, T. / Nakamura, M. / Kurishima, K. / Tokumitsu, M. / Enoki, T. / Oyo Butsuri Gakkai et al. | 2006
- 100
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High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDsMaezawa, K. / Ookawa, Y. / Kishimoto, S. / Mizutani, T. / Takakusaki, M. / Nakata, H. / Oyo Butsuri Gakkai et al. | 2006
- 102
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High-speed and Low-Power NRZ Delayed Flip-Flop Circuit Using RTD/HEMT Integration TechnologyKim, H. / Yeon, S. / Seo, K. / Oyo Butsuri Gakkai et al. | 2006
- 104
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Effect of flatness of heterointerfaces on device performance of InP-based HEMTsWatanabe, I. / Shinohara, K. / Kitada, T. / Shimomura, S. / Endoh, A. / Yamashita, Y. / Mimura, T. / Hiyamizu, S. / Matsui, T. / Oyo Butsuri Gakkai et al. | 2006
- 106
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Thermally-stable gate technologies for InAlAs/InGaAs/InP HEMTsWang, L. / Zhao, W. / Adesida, I. / Oyo Butsuri Gakkai et al. | 2006
- 108
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The Gate Length Reducing Process for Pseudomorphic In~0~.~5~2Al~0~.~4~8As/In~0~.~7Ga~0~.~3As HEMTsYeon, S. J. / Lee, J. / Seol, G. / Seo, K. / Oyo Butsuri Gakkai et al. | 2006
- 110
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Diamond and GaN-Based Electronics (Invited)Kohn, E. / Oyo Butsuri Gakkai et al. | 2006
- 112
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C-band GaN-FET Power Amplifiers with 160-W Output PowerOkamoto, Y. / Wakejima, A. / Matsunaga, K. / Ando, Y. / Nakayama, T. / Ota, K. / Miyamoto, H. / Oyo Butsuri Gakkai et al. | 2006
- 114
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GaN-based Direct-coupled FET Logic (DCFL) Digital Circuits Operating at 375^oCCai, Y. / Cheng, Z. / Yang, Z. / Tang, C. W. / Lau, K. M. / Chen, K. J. / Oyo Butsuri Gakkai et al. | 2006
- 116
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Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETsDeguchi, T. / Yamashita, M. / Waki, E. / Nakagawa, A. / Ishikawa, H. / Egawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 118
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The High Temperature Thermally Treated SiNx Passivation of AlGaN/GaN HEMT using Remote PECVDHer, J. C. / Kim, D. H. / Kim, S. W. / Jang, K. C. / Lee, J. H. / Oh, J. E. / Oyo Butsuri Gakkai et al. | 2006
- 120
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Overview and Future Challenge of FeRAM Technologies (Invited)Kato, Y. / Tanaka, H. / Isogai, K. / Kaibara, K. / Kaneko, Y. / Shimada, Y. / Oyo Butsuri Gakkai et al. | 2006
- 122
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Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic ProcessUdayakumar, K. R. / Moise, T. S. / Summerfelt, S. R. / Celii, F. G. / Shinn, G. / Boku, K. / Remack, K. / Haider, A. / Anderson, D. / Gertas, J. et al. | 2006
- 124
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Formation of Ferroelectric Sr~2(Ta~1~-~x, Nb~x)~2O~7 Thin Film on Amorphous SiO~2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor DepositionTakahashi, I. / Funaiwa, K. / Azumi, K. / Yamashita, S. / Shirai, Y. / Hirayama, M. / Teramoto, A. / Sugawa, S. / Ohmi, T. / Oyo Butsuri Gakkai et al. | 2006
- 126
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Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAMJung, J. Y. / Joo, H. J. / Park, J. H. / Kang, S. K. / Kim, H. S. / Choi, D. Y. / Kim, J. H. / Lee, Y. S. / Kang, Y. M. / Lee, S. Y. et al. | 2006
- 128
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Impact of (111)-Oriented SrRuO~3/Pt Tailored Electrode for Highly Reproducible Preparation of MOCVD-PZT Film for High Density FeRAMMenou, N. / Kuwabara, H. / Funakubo, H. / Oyo Butsuri Gakkai et al. | 2006
- 130
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Overview and Future Challenges eDRAM Technologies (Invited)Sugimura, H. / Wake, T. / Inoue, K. / Hamada, M. / Shirai, H. / Arai, S. / Takeuchi, M. / Sakoh, T. / Sakao, M. / Tanigawa, T. et al. | 2006
- 132
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A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom ElectrodesOhtsuka, T. / Shibata, Y. / Arai, H. / Ichimura, H. / Matsuyama, S. / Uchiyama, K. / Suzuki, J. / Tsuzumitani, A. / Yoneda, K. / Hashimoto, Y. et al. | 2006
- 134
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Robust and Cost-Effective MIS-Al~2O~3/SiON Double-Layered Capacitor Technology for Sub-90 nm DRAMsTonomura, O. / Hamamura, H. / Miki, H. / Oyo Butsuri Gakkai et al. | 2006
- 136
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Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAMSung, M. G. / Lim, K. Y. / Cho, H. J. / Lee, S. R. / Jang, S. A. / Kim, Y. S. / Joo, M. S. / Lee, J. H. / Kim, T. Y. / Yang, H. S. et al. | 2006
- 138
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Gate Workfunction Engineering of Bulk FinFETs for Sub-50 nm DRAM Cell TransistorsPark, K. H. / Han, K. R. / Kim, Y. M. / Lee, J. H. / Oyo Butsuri Gakkai et al. | 2006
- 140
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Carbon Nanotube via Technologies for Advanced Interconnect Integration (Invited)Nihei, M. / Kawabata, A. / Hyakushima, T. / Sato, S. / Nozue, T. / Kondo, D. / Shioya, H. / Iwai, T. / Ohfuti, M. / Awano, Y. et al. | 2006
- 142
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Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper InterconnectsHigashi, K. / Yamaguchi, H. / Yosho, T. / Sakata, A. / Omoto, S. / Yamashita, S. / Fujimaki, T. / Enomoto, Y. / Matsunaga, N. / Shibata, H. et al. | 2006
- 144
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Key mechanisms for improved EM lifetime of CoWP capped Cu interconnectsKakuhara, Y. / Kawahara, N. / Ueno, K. / Oda, N. / Oyo Butsuri Gakkai et al. | 2006
- 146
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A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65 nm TechnologyLee, H. C. / Joo, S. J. / Baek, I. C. / Shim, C. / Hong, J. H. / Han, J. W. / Kim, K. H. / Kim, Y. M. / Oyo Butsuri Gakkai et al. | 2006
- 148
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Modeling and Characterization of the On-chip InterconnectsKumar, R. / Rustagi, S. C. / Sun, S. / Mouthaan, K. / Wong, T. K. S. / Oyo Butsuri Gakkai et al. | 2006
- 150
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Design of New Ultra Low-dielectric Materials and Characterization (Invited)Yoon, D. Y. / Ro, H. W. / Park, E. S. / Park, J. H. / Shim, J. H. / Lee, J. K. / Char, K. / Rhee, H. W. / Lee, H. J. / Soles, C. et al. | 2006
- 152
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SiOCH Films with Hydrocarbon Network Bonds: First-Principles InvestigationTajima, N. / Hamada, T. / Ohno, T. / Yoneda, K. / Kondo, S. / Kobayashi, N. / Shinriki, M. / Miyazawa, K. / Sakota, K. / Hasaka, S. et al. | 2006
- 154
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Nondestructive characterization of temperature-dependent backbone Si-O-Si structure in porous silica films by in-situ Fourier-transform infrared spectroscopyTakada, S. / Hata, N. / Li, X. / Fujii, N. / Nakayama, T. / Kikkawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 156
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Characterization of Low-k Interconnect Dielectrics by EELSOtsuka, Y. / Shimada, M. / Kawasaki, N. / Ogawa, S. / Oyo Butsuri Gakkai et al. | 2006
- 158
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Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC DevicesMiyagawa, Y. / Murata, T. / Nishida, Y. / Nakai, T. / Uedono, A. / Hattori, N. / Matsuura, M. / Asai, K. / Yoneda, M. / Oyo Butsuri Gakkai et al. | 2006
- 160
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Direct Silicon Bonded (DSB) Mixed Orientation Substrate for High Performance Bulk CMOS Technology (Invited)Sung, C. Y. / Yin, H. / Ng, H. / Saenger, K. L. / Pfeiffer, G. / Chan, V. / Zhang, R. / Li, J. / Ott, J. A. / Bendernagel, R. et al. | 2006
- 162
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Strained-silicon Transistors with Silicon-Carbon Source/Drain (Invited)Yeo, Y. C. / Oyo Butsuri Gakkai et al. | 2006
- 164
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Effect of Tensile Strain on Gate and Substrate Currents of strained-Si n-MOSFETsHoshii, T. / Sugahara, S. / Takagi, S. / Oyo Butsuri Gakkai et al. | 2006
- 166
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Sub-30 nm Strained P-Channel FinFETs with Condensed SiGe Source/Drain StressorsTan, K. M. / Liow, T. Y. / Lee, R. T. / Chui, K. J. / Tung, C. H. / Balasubramanian, N. / Samudra, G. S. / Yoo, W. J. / Yeo, Y. C. / Oyo Butsuri Gakkai et al. | 2006
- 168
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Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETsKrishnamohan, T. / Kim, D. / Jungemann, C. / Nishi, Y. / Saraswat, K. C. / Oyo Butsuri Gakkai et al. | 2006
- 170
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Potential of and Issues with Multiple-Stressor Technology (MST) in High-Performance 45nm Generation DevicesMiyashita, T. / Hatada, A. / Shimamune, Y. / Owada, T. / Tamura, N. / Aoyama, T. / Satoh, S. / Oyo Butsuri Gakkai et al. | 2006
- 172
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Large Reduction in Standby Power Consumption Achieved with Stress-controlled SRAM Cell LayoutKudo, H. / Ishikawa, K. / Tanabe, R. / Fukutome, H. / Mishima, Y. / Satou, S. / Sugii, T. / Kihara, F. / Okamoto, M. / Yoshimura, M. et al. | 2006
- 174
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Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI ProcessHorita, K. / Ishibashi, M. / Umeda, H. / Kawahara, T. / Ikeda, T. / Yamashita, T. / Kuroi, T. / Inoue, Y. / Oyo Butsuri Gakkai et al. | 2006
- 176
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A Full Analytical Model to evaluate Strain Induced by CESL on MOSFET PerformancesPayet, F. / Boeuf, F. / Ortolland, C. / Skotnicki, T. / Oyo Butsuri Gakkai et al. | 2006
- 178
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56% pMOSFETs Drive Current Enhancement from Optimized Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOSLee, K. H. / Huang, C. T. / Hung, W. H. / Jeng, L. S. / Ting, S. F. / Tseng, M. L. / Wu, J. C. / Shen, T. M. / Cheng, O. / Liang, C. W. et al. | 2006
- 180
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GaN Quantum Dots, Quantum Wires and Quantum Discs with Novel Optoelectronic Properties (Invited)Ploog, K. H. / Oyo Butsuri Gakkai et al. | 2006
- 182
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Functions and Device Applications of Quantum-sized Silicon (Invited)Koshida, N. / Oyo Butsuri Gakkai et al. | 2006
- 184
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Uniform Self-Formation of High-Density InAs Quantum Dots by InGaAs Embedding GrowthTonomura, S. / Tomita, M. / Yamaguchi, K. / Oyo Butsuri Gakkai et al. | 2006
- 186
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Individual cathode luminescence spectroscopy of zinc oxide particles based on in situ transmission electron microscopyOhyama, M. / Kizuka, T. / Oyo Butsuri Gakkai et al. | 2006
- 188
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Facile Fabrication of Gold Nanoparticle-Titanium Oxide Alternate Assemblies by Surface Sol-Gel Process and Their Photoresponsive PropertiesArakawa, T. / Kawahara, T. / Akiyama, T. / Yamada, S. / Oyo Butsuri Gakkai et al. | 2006
- 190
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Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A SubstrateNishinaga, J. / Harada, R. / Takada, T. / Kawaharazuka, A. / Horikoshi, Y. / Oyo Butsuri Gakkai et al. | 2006
- 192
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A method for suppressing deep-level emission in ZnSe/Ge/Ge~xSi~1~-~x/Si structureKu, J. T. / Yang, T. H. / Luo, G. / Chou, W. C. / Yang, T. Y. / Chang, C. Y. / Oyo Butsuri Gakkai et al. | 2006
- 194
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Effect of Hydrogen in Zinc Oxide Thin-Film Transistor grown by MOCVDJo, J. / Seo, O. / Jeong, E. / Seo, H. / Lee, B. / Choi, Y. I. / Oyo Butsuri Gakkai et al. | 2006
- 196
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The Effect of As~2 and As~4 Molecule Beam Species on MBE Grown GaN~xAs~1~-~x /GaAs MQW by Modulated N Radical Beam SourceKakino, M. / Fujii, K. / Takao, K. / Miyagawa, H. / Tsurumachi, N. / Itoh, H. / Nakanishi, S. / Akiyama, H. / Koshiba, S. / Oyo Butsuri Gakkai et al. | 2006
- 198
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GaN Heteroepitaxy on Si(111) Substrates Using AlN/AlGaN Superlattice Buffer LayersAkasaka, T. / Kobayashi, Y. / Makimoto, T. / Oyo Butsuri Gakkai et al. | 2006
- 200
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Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step ProcessChen, H. G. / Yao, H. H. / Chu, J. T. / Hsu, N. F. / Lu, T. C. / Kuo, H. C. / Wang, S. C. / Oyo Butsuri Gakkai et al. | 2006
- 202
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Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase EpitaxyKobayashi, Y. / Hibino, H. / Nakamura, T. / Akasaka, T. / Makimoto, T. / Matsumoto, N. / Oyo Butsuri Gakkai et al. | 2006
- 204
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ZnO-based semiconductors for visible light emission devicesOhashi, T. / Yamamoto, K. / Nakamura, A. / Aoki, T. / Temmyo, J. / Oyo Butsuri Gakkai et al. | 2006
- 206
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Towards metal gate/high-k dielectric integration for high performance CMOS technology (Invited)Cartier, E. / Oyo Butsuri Gakkai et al. | 2006
- 208
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Demonstration of Low V~1 NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate StackPark, C. S. / Song, S. C. / Bersuker, G. / Alshareef, H. N. / Ju, B. S. / Majhi, P. / Lee, B. H. / Jammy, R. / Park, H. K. / Joo, M. S. et al. | 2006
- 210
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Wide Controllability of Flatband Voltage in La~2O~3 Gate Stack Structures - Remarkable Advantages of La~2O~3 over HfO~2 -Ohmori, K. / Ahmet, P. / Shiraishi, K. / Yamabe, K. / Watanabe, H. / Akasaka, Y. / Umezawa, N. / Nakajima, K. / Yoshitake, M. / Nakayama, T. et al. | 2006
- 212
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Study of La Concentration Dependent V~F~B Shift in Metal/HfLaOx/Si CapacitorsYamamoto, Y. / Kita, K. / Kyuno, K. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 214
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High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with 1 monolayer epitaxial SrSi~2Takashima, A. / Nishikawa, Y. / Schimizu, T. / Matsushita, D. / Suzuki, M. / Yamaguchi, T. / Fukushima, N. / Oyo Butsuri Gakkai et al. | 2006
- 216
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Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO~2Ohta, A. / Yoshinaga, H. / Murakami, H. / Azuma, D. / Munetaka, Y. / Higashi, S. / Miyazaki, S. / Aoyama, T. / Kosaka, K. / Shibahara, K. et al. | 2006
- 218
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Pd~2Si Fully-Silicided Gate: Kinetics of Silicide Formation and Workfunction TuningHosoi, T. / Sano, K. / Hosawa, K. / Shibahara, K. / Oyo Butsuri Gakkai et al. | 2006
- 220
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Workfunction Adjustment Using Thin Metal Film (Ti, Pd) under FUSI Gate Electrode and Laser AnnealingHuang, Y. / Pey, K. L. / Chi, D. Z. / Ong, K. K. / Lee, P. S. / Goh, I. S. / Oyo Butsuri Gakkai et al. | 2006
- 222
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The first principles calculations of fermi level pinning in FUSI-PtSi/HfO~2/Si system induced by local distortion of HfO~2Ikeda, M. / Kresse, G. / Kadoshima, M. / Nabatame, T. / Satake, H. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 224
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Si-Capped Annealing of HfO~2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-DiffusionTakahashi, M. / Satake, H. / Kadoshima, M. / Ogawa, A. / Iwamoto, K. / Ota, H. / Nabatame, T. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 226
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New Approach to Experimental Nanomechanics Using MEMS Technology (Invited)Isono, Y. / Oyo Butsuri Gakkai et al. | 2006
- 228
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CMOS-Compatible Suspended Square Inductors on Silicon Wafers for RF ICsTai, C. M. / Liao, C. N. / Oyo Butsuri Gakkai et al. | 2006
- 230
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Ultra high aspect ratio sub-micron silicon micromachining by double-passivation deep reactive ion etchingNagarajan, R. / Murthy, B. R. / Oyo Butsuri Gakkai et al. | 2006
- 232
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Room Temperature Vacuum Sealing with Au Thin Films Using Ar Beam Surface ActivationOkada, H. / Itoh, T. / Suga, T. / Oyo Butsuri Gakkai et al. | 2006
- 234
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MEMS Wafer Level Packaging by Using Surface Activated BondingTakegawa, Y. / Baba, T. / Okudo, T. / Suzuki, Y. / Oyo Butsuri Gakkai et al. | 2006
- 236
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ZnO Nanorods for Electronic Nanodevice Applications (Invited)Yi, G. C. / Park, W. I. / Yoo, J. / Kim, H. J. / Lee, C. H. / Oyo Butsuri Gakkai et al. | 2006
- 238
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Arrangement of Catalyst Islands at Surface Atomic Steps toward Position Control of NanowiresHibino, H. / Tateno, K. / Watanabe, Y. / Oyo Butsuri Gakkai et al. | 2006
- 240
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Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowiresSanada, H. / Gotoh, H. / Tateno, K. / Nakano, H. / Oyo Butsuri Gakkai et al. | 2006
- 242
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Probing Carbon Nanostructures Growth Mechanism Using an in-situ UHVTEM (Invited)Foo, Y. L. / Oyo Butsuri Gakkai et al. | 2006
- 244
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High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified MicroelectrodesOkuno, J. / Maehashi, K. / Matsumoto, K. / Kerman, K. / Takamura, Y. / Tamiya, E. / Oyo Butsuri Gakkai et al. | 2006
- 246
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Electric properties of single-walled carbon nanotube film field effect transistors with various work function electrodes: a comparison between pristine and potassium-encapsulated nanotubesMaki, H. / Suzuki, S. / Sato, T. / Ishibashi, K. / Oyo Butsuri Gakkai et al. | 2006
- 248
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DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect TransistorsKatsura, T. / Maehashi, K. / Matsumoto, K. / Kerman, K. / Takamura, Y. / Tamiya, E. / Oyo Butsuri Gakkai et al. | 2006
- 250
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Surface Potential Measurement of Carbon Nanotube FETs using Kelvin Probe Force MicroscopyUmesaka, T. / Ohnaka, H. / Ohno, Y. / Kishimoto, S. / Maezawa, K. / Mizutani, T. / Oyo Butsuri Gakkai et al. | 2006
- 252
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High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)Hsu, Y. P. / Chang, S. J. / Su, Y. K. / Chen, W. S. / Sheu, J. K. / Chu, J. Y. / Kuo, C. T. / Oyo Butsuri Gakkai et al. | 2006
- 254
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Improved light output and electrical performance of InGaN/GaN light-emitting diode by surface texturing of the n-type GaNSu, S. H. / Hou, C. C. / Shieh, R. S. / Yokoyama, M. / Oyo Butsuri Gakkai et al. | 2006
- 256
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Fabrication of High Light-Extraction Efficiency LED Using Nanostructures by UV Nanoimprint Lithography and ElectrodepositionOno, H. / Ono, Y. / Kasahara, K. / Mizuno, J. / Shoji, S. / Oyo Butsuri Gakkai et al. | 2006
- 258
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Light Emitting Diode Array Prepared by Epitaxial Film BondingSuzuki, T. / Fujiwara, H. / Mutoh, M. / Sagimori, T. / Kurokawa, H. / Igari, T. / Kaneto, T. / Furuta, H. / Abiko, I. / Sakuta, M. et al. | 2006
- 260
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High Performances of 650 nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber ApplicationsLee, Y. C. / Lee, C. E. / Chiou, S. W. / Kuo, H. C. / Lu, T. C. / Wang, S. C. / Oyo Butsuri Gakkai et al. | 2006
- 262
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InP-Based Quantum Cascade Lateral Grating Distributed Feedback LasersKennedy, K. / Revin, D. G. / Krysa, A. B. / Groom, K. M. / Wilson, L. R. / Cockburn, J. W. / Hogg, R. / Oyo Butsuri Gakkai et al. | 2006
- 264
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Self-Assembled Quantum Dots: Engineered Gain Medium (Invited)Oktyabrsky, S. / Yakimov, M. / Van Eisden, J. / Tokranov, V. / Oyo Butsuri Gakkai et al. | 2006
- 266
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Fabrication of Sb-based QDs for Long-wavelength VCSELs (Invited)Yamamoto, N. / Akahane, K. / Gozu, S. / Ueta, A. / Ohtani, N. / Tsuchiya, M. / Oyo Butsuri Gakkai et al. | 2006
- 268
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Systematic Study of the Effects of d-p-doping on 1.3 mum Quantum Dot LasersAlexander, R. / Agarwal, H. / Groom, K. / Liu, H. / Hopkinson, M. / Hogg, R. / Oyo Butsuri Gakkai et al. | 2006
- 270
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Single-photon Generator for Telecom Applications (Invited)Usuki, T. / Takemoto, K. / Hirose, S. / Takatsu, M. / Miyazawa, T. / Sakuma, Y. / Yokoyama, N. / Arakawa, Y. / Oyo Butsuri Gakkai et al. | 2006
- 272
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Wavelength Tunable (1.55 mum Region) InAs/InGaAsP/InP (100) Quantum Dots in Telecom Laser ApplicationsNotzel, R. / Anantathanasarn, S. / van Veldhoven, P. J. / van Otten, F. W. M. / Eijkemans, T. J. / Barbarin, Y. / Bente, E. A. J. M. / Vries, T. d. / Smalbrugge, E. / Geluk, E. J. et al. | 2006
- 274
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Novel Quantum Dot 3-section Super-luminescent DiodeXin, Y. C. / Martinez, A. / Saiz, T. A. / Nilsen, T. / Moscho, A. L. / Li, Y. / Gray, A. / Vahktin, A. / Lester, L. F. / Oyo Butsuri Gakkai et al. | 2006
- 276
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MBE Growth of High Power Quantum Dot Superluminescent LEDsRay, S. K. / Choi, T. L. / Groom, K. M. / Liu, H. Y. / Hopkinson, M. / Hogg, R. A. / Oyo Butsuri Gakkai et al. | 2006
- 278
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Large-Scale Quantum Computing Emulation Based on Unitary Macro-OperationsGoto, Y. / Fujishima, M. / Oyo Butsuri Gakkai et al. | 2006
- 280
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Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si~xN MOSFETMatsumoto, M. / Ohba, R. / Yasuda, S. / Uchida, K. / Tanamoto, T. / Fujita, S. / Oyo Butsuri Gakkai et al. | 2006
- 282
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Nearest-Euclidean-Distance Search Associative Memory Architecture with Fully Parallel Mixed Digital-Analog Match CircuitryAbedin, M. A. / Tanaka, Y. / Ahmadi, A. / Koide, T. / Mattausch, H. J. / Oyo Butsuri Gakkai et al. | 2006
- 284
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Scaling Trends and Mitigation Techniques for Soft Errors in Flip-FlopsUemura, T. / Tosaka, Y. / Satoh, S. / Takahisa, K. / Hatanaka, K. / Oyo Butsuri Gakkai et al. | 2006
- 286
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Mechanisms of Resistance Switching Memory Effect in Oxides (Invited)Kawasaki, M. / Sawa, A. / Tokura, Y. / Oyo Butsuri Gakkai et al. | 2006
- 288
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Low Power Operation of Non-volatile Hafnium Oxide Resistive MemoryLee, H. Y. / Chen, P. S. / Wang, C. C. / Maikap, S. / Tzeng, P. J. / Lin, C. H. / Lee, L. S. / Tsai, M. J. / Oyo Butsuri Gakkai et al. | 2006
- 290
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SiO~x/beta-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of beta-SiCShouji, M. / Nagashima, T. / Suda, Y. / Oyo Butsuri Gakkai et al. | 2006
- 292
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Future Outlook of Floating Gate Flash Memory (Invited)Arai, F. / Oyo Butsuri Gakkai et al. | 2006
- 294
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An Advanced Air Gap Process for MLC flash memories reducing Vth interference and realizing high reliabilityTsukamoto, K. / Murata, T. / Fukumura, T. / Ohta, F. / Yoshitake, T. / Shimizu, S. / Ikeda, Y. / Asai, K. / Shimizu, M. / Tsuchiya, O. et al. | 2006
- 296
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Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O~2/NO Plasma OxynitridationSuwa, T. / Takahashi, H. / Kumagai, Y. / Fujita, G. / Teramoto, A. / Sugawa, S. / Ohmi, T. / Oyo Butsuri Gakkai et al. | 2006
- 298
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Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory CellPark, K. T. / Lee, S. C. / Sel, J. / Choi, J. / Kim, K. / Oyo Butsuri Gakkai et al. | 2006
- 300
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Organic Single Crystal Transistors and Interface Control (Invited)Iwasa, Y. / Oyo Butsuri Gakkai et al. | 2006
- 302
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Decay process of a large surface potential of as-deposited Alq3 filmsKajimoto, N. / Manaka, T. / Iwamoto, M. / Oyo Butsuri Gakkai et al. | 2006
- 304
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Electronic structure of bathocuproine on metal studied by ultraviolet photoemission spectroscopyToyoshima, S. / Kuwabara, K. / Sakurai, T. / Taima, T. / Saito, K. / Kato, H. / Akimoto, K. / Oyo Butsuri Gakkai et al. | 2006
- 306
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Spin injection from magnetic electrodes to organic semiconductors studied by transport and spectroscopic measurementsShimada, T. / Oyo Butsuri Gakkai et al. | 2006
- 308
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Dependence of Memory Characteristics of Organic Bi-stable Device on Structural ParametersLee, J. J. / Song, C. K. / Oyo Butsuri Gakkai et al. | 2006
- 310
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Self Assembled Viologen Modified Electrode as Mediator of Glucose SensorLee, D. Y. / Kafi, A. K. M. / Park, S. H. / Qian, D. J. / Kwon, S. / Oyo Butsuri Gakkai et al. | 2006
- 312
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Orientation and Electrical Conduction of Poly(3-hexylethiophene) Thin Film Prepared by Using a Different Solution-process MethodMototani, S. / Ochiai, S. / Tanabe, S. / Ohashi, A. / Uchida, Y. / Kojima, K. / Mizutani, T. / Oyo Butsuri Gakkai et al. | 2006
- 314
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Theoretical Investigation of Electrical and Electronic Properties of Carbon MaterialsChutia, A. / Zhu, Z. / Tsuboi, H. / Koyama, M. / Endou, A. / Kubo, M. / Del Carpio, C. A. / Selvam, P. / Miyamoto, A. / Oyo Butsuri Gakkai et al. | 2006
- 316
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Si Nano-photonics for LSI on-chip Optical Interconnection (Invited)Nishi, K. / Fujikata, J. / Yamada, H. / Ishi, T. / Nakada, M. / Nose, K. / Mizuno, M. / Fukaishi, M. / Urino, Y. / Ohashi, K. et al. | 2006
- 318
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3D System Integration: Enabling Technologies and Applications (Invited)Ramm, P. / Oyo Butsuri Gakkai et al. | 2006
- 320
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Real-time observation of Hydrogen Plasma Reflow Process with Lead-free Solder PastesNishi, S. / Higurashi, E. / Suga, T. / Hagihara, T. / Takeuchi, T. / Shingai, Y. / Yamagata, S. / Katoh, R. / Arase, K. / Oyo Butsuri Gakkai et al. | 2006
- 322
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The Reliability Characteristics of Wafer-Level Chip-Scale Package under Various Current StressingKung, H. Y. / Chen, S. H. / Lai, Y. S. / Jahja, E. / Yeh, W. K. / Oyo Butsuri Gakkai et al. | 2006
- 324
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65nm Node Transistor Characteristic Evaluation Technology for Assembly Stress and Assembly Stress Relaxation DesignTakemura, K. / Takahashi, M. / Sano, H. / Koike, K. / Itoh, Y. / Hirano, H. / Oyo Butsuri Gakkai et al. | 2006
- 326
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Performance of open-gate AlGaN/GaN HFET in various kinds of liquidsKokawa, T. / Sato, T. / Hashizume, T. / Oyo Butsuri Gakkai et al. | 2006
- 328
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Characteristics of a New Resistive-Type Hydrogen SensorHung, C. W. / Lin, H. L. / Chen, H. I. / Tsai, Y. Y. / Lai, P. H. / Fu, S. I. / Liu, W. C. / Oyo Butsuri Gakkai et al. | 2006
- 330
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Modulation of Resistivity of Two-Dimensional Electron Gas in AlGaN/GaN StructureChang, Y. C. / Sheu, J. K. / Li, Y. L. / Oyo Butsuri Gakkai et al. | 2006
- 332
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Electrical and Optical Properties of an n-Channel GaN Schottky Barrier MISFETLee, H. B. / Cho, H. I. / An, H. S. / Lee, J. H. / Hahm, S. H. / Oyo Butsuri Gakkai et al. | 2006
- 334
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Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFETIkuta, T. / Miyanami, Y. / Fujita, S. / Iwamoto, H. / Kadomura, S. / Oyo Butsuri Gakkai et al. | 2006
- 336
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Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron StressPhua, T. W. H. / Ang, D. S. / Tung, C. H. / Ling, C. H. / Oyo Butsuri Gakkai et al. | 2006
- 338
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Ni(alloy)-germanosilicide contact technology for Si~1~-~xGe~x (x=0.20-0.5) junctionsPey, K. L. / Jin, L. / Choi, W. K. / Yu, H. P. / Antoniadis, D. A. / Fitzgerald, E. A. / Chi, D. Z. / Isaacson, D. M. / Oyo Butsuri Gakkai et al. | 2006
- 340
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Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni MigrationTsuchiaki, M. / Nishiyama, A. / Oyo Butsuri Gakkai et al. | 2006
- 342
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Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot PlatesItokawa, H. / Akutsu, H. / Nomachi, A. / Oono, H. / Iinuma, T. / Suguro, K. / Oyo Butsuri Gakkai et al. | 2006
- 344
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A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow JunctionsShima, A. / Mine, T. / Feng, L. / Wang, X. / Wang, Y. / Torii, K. / Oyo Butsuri Gakkai et al. | 2006
- 346
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Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111): H surfaces by scanning tunneling microscopyNishizawa, M. / Bolotov, L. / Kanayama, T. / Oyo Butsuri Gakkai et al. | 2006
- 348
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Ohm's Law from a Transmission ViewpointNatori, K. / Shimizu, T. / Oyo Butsuri Gakkai et al. | 2006
- 350
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A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETsTsuchiya, H. / Fujii, K. / Mori, T. / Miyoshi, T. / Oyo Butsuri Gakkai et al. | 2006
- 352
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Intrinsic Delay of Nanoscale MOSFETs under Ballistic TransportTsuda, A. / Kunikiyo, T. / Okagaki, T. / Watanabe, T. / Tanizawa, M. / Ishikawa, K. / Nunogami, H. / Uchida, A. / Oyo Butsuri Gakkai et al. | 2006
- 354
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The effect of side-traps on ballistic transistor in Kondo regimeTanamoto, T. / Uchida, K. / Fujita, S. / Oyo Butsuri Gakkai et al. | 2006
- 356
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Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device StructuresKusaka, H. / Sano, N. / Oyo Butsuri Gakkai et al. | 2006
- 358
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Simulation of Atomic Scale Effects and Fluctuations in Nano-Scale CMOS (Invited)Asenov, A. / Brown, A. R. / Roy, G. / Alexander, C. / Martinez, A. / Oyo Butsuri Gakkai et al. | 2006
- 360
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Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOIMaki, Y. / Hirano, Y. / Tsujiuchi, M. / Iwamatsu, T. / Ozawa, O. / Ipposhi, T. / Inoue, Y. / Oyo Butsuri Gakkai et al. | 2006
- 362
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3D Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random DopantsMarkov, S. / Brown, A. R. / Cheng, B. / Roy, G. / Roy, S. / Asenov, A. / Oyo Butsuri Gakkai et al. | 2006
- 364
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NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and BeyondHuang, C. T. / Jeng, L. S. / Hung, W. H. / Ting, S. F. / Lee, K. H. / Tseng, M. L. / Cheng, O. / Liang, C. W. / Oyo Butsuri Gakkai et al. | 2006
- 366
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NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge TrappingTang, C. J. / Ma, H. C. / Chan, C. T. / Wang, T. / Wang, H. C. / Oyo Butsuri Gakkai et al. | 2006
- 368
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Impact of Silicon Film Thickness on LF Noise in SOI DevicesZafari, L. / Jomaah, J. / Ghibaudo, G. / Oyo Butsuri Gakkai et al. | 2006
- 370
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Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI DevicesLi, Y. / Yu, S. M. / Oyo Butsuri Gakkai et al. | 2006
- 372
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A Practical, Systematic, Simple Method to Evaluate Speed/Bandwidth Potential of CMOS Processes for Analog Design and Related Practical Considerations (Invited)Hadidi, K. / Oyo Butsuri Gakkai et al. | 2006
- 374
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A 0.6V Supply CMOS Amplifier Using Noise Reduction Technique of Autozeroing and Chopper StabilizationMasui, Y. / Yoshida, T. / Sasaki, M. / Iwata, A. / Oyo Butsuri Gakkai et al. | 2006
- 376
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Low-Voltage, Low-Phase-Noise Ring-VCO using l/f-Noise Reduction TechniquesYoshida, T. / Ishida, N. / Sasaki, M. / Iwata, A. / Oyo Butsuri Gakkai et al. | 2006
- 378
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A 900-MHz Low-Noise Amplifier with High Tolerance for Noise Degradation due to a Leakage Signal from a TransmitterFujimoto, R. / Takemura, G. / Ishii, M. / Toyoda, T. / Tsurumi, H. / Oyo Butsuri Gakkai et al. | 2006
- 380
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High-resolution RBS Analysis of Si-dielectrics Interfaces (Invited)Kimura, K. / Ming, Z. / Nakajima, K. / Suzuki, M. / Uematsu, M. / Torii, K. / Kamiyama, S. / Nara, Y. / Watanabe, H. / Shiraishi, K. et al. | 2006
- 382
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Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surfaces by Ols Photoemission Spectroscopy Using Synchrotron RadiationSuemitsu, M. / Kato, A. / Togashi, H. / Konno, A. / Yamamoto, Y. / Teraoka, Y. / Yoshigoe, A. / Narita, Y. / Oyo Butsuri Gakkai et al. | 2006
- 384
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Nonlinear Al Concentration Dependence of the HfAlO~x/Si Conduction Band Offset Studied by Internal Photoemission SpectroscopyHorikawa, T. / Ogawa, A. / Iwamoto, K. / Okada, K. / Ota, H. / Nabatame, T. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 386
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Electric characteristics of Si~3N~4 films formed by directly radical nitridation on Si (110) and Si (100) surfacesHiguchi, M. / Aratani, T. / Hamada, T. / Teramoto, A. / Hattori, T. / Sugawa, S. / Ohmi, T. / Shinagawa, S. / Nohira, H. / Ikenaga, E. et al. | 2006
- 388
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Plasma Nitridation of HfO~2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFETKirsch, P. D. / Quevedo-lopez, M. / Krishnan, S. A. / Krug, C. / Aguirre, F. S. / Wallace, R. M. / Lee, B. H. / Jammy, R. / Oyo Butsuri Gakkai et al. | 2006
- 390
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Excellent Leakage Current of Crystallized Silicon-Doped HfO2 Films Down to Sub-nm EOTTomida, K. / Kita, K. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 392
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Spatial Fluctuation of Electrical properties in Hf-Silicate Film Observed with Scanning Capacitance MicroscopyNaitou, Y. / Ando, A. / Ogiso, H. / Kamiyama, S. / Nara, Y. / Watanabe, H. / Yasutake, K. / Oyo Butsuri Gakkai et al. | 2006
- 394
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Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion ImplantationInumiya, S. / Uedono, A. / Miyazaki, S. / Ohtsuka, S. / Matsuki, T. / Wada, T. / Aoyama, T. / Yamada, K. / Nara, Y. / Oyo Butsuri Gakkai et al. | 2006
- 396
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Quantitative Evaluation of Interface Trap Density in Ge-MIS InterfacesTaoka, N. / Ikeda, K. / Yamashita, Y. / Sugiyama, N. / Takagi, S. / Oyo Butsuri Gakkai et al. | 2006
- 398
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Fabrication of SiO~2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on GeKumagai, H. / Shichijo, M. / Ishikawa, H. / Hoshii, T. / Sugahara, S. / Uchida, Y. / Takagi, S. / Oyo Butsuri Gakkai et al. | 2006
- 400
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Strong Fermi-level Pinning of Wide Range of Work-function Metals at Valence Band Edge of GermaniumNishimura, T. / Kita, K. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 402
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Suppression of Leakage Current and Moisture Absorption of La~2O~3 films with Ultraviolet Ozone Post TreatmentZhao, Y. / Kita, K. / Kyuno, K. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
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Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O SystemIno, T. / Kamimuta, Y. / Koyama, M. / Nishiyama, A. / Oyo Butsuri Gakkai et al. | 2006
- 406
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Interface Layer Control at Y~2O~3/Ge by N~2 and O~2 Annealing on Ge(100) and Ge(111) SurfacesNomura, H. / Kita, K. / Nishimura, T. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 408
-
Non-crystalline Stable Gate Dielectrics for Advanced Nano-Cmos DevicesLucovsky, G. / Lee, S. / Luning, J. / Oyo Butsuri Gakkai et al. | 2006
- 410
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Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen IncorporationMatsuki, T. / Inumiya, S. / Mise, N. / Eimori, T. / Nara, Y. / Oyo Butsuri Gakkai et al. | 2006
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Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical ResultsEndres, R. / Stefanov, Y. / Schwalke, U. / Oyo Butsuri Gakkai et al. | 2006
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-
Impact of PVD-based In-situ Fabrication Method for Metal/High-kappa Gate StacksHorie, S. / Minami, T. / Kitano, N. / Kosuda, M. / Watanabe, H. / Yasutake, K. / Oyo Butsuri Gakkai et al. | 2006
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Investigation of Inversion C-V Reconstruction for Long-Channel MOSFETs with Leaky Dielectrics using Intrinsic Input Resistance ApproachLee, W. / Su, P. / Su, K. W. / Chiang, C. S. / Liu, S. / Oyo Butsuri Gakkai et al. | 2006
- 418
-
Behavior of Local Charge Trapping Sites in La~2O~3-Al~2O~3 Composite Films under Constant Voltage StressSago, T. / Seko, A. / Sakashita, M. / Sakai, A. / Ogawa, M. / Zaima, S. / Oyo Butsuri Gakkai et al. | 2006
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Improvement of mobility and NBTI reliability in MOSFETs with ALD-Si-nitride/SiO~2 stack dielectrics and P^+-poly Si gateZhu, S. / Nakajima, A. / Ohashi, T. / Miyake, H. / Oyo Butsuri Gakkai et al. | 2006
- 422
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Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique: N~o~t vs. Oxide ProcessingSon, Y. / Baek, C. K. / Kim, B. / Han, I. S. / Goo, T. G. / Lee, H. D. / Kim, D. M. / Oyo Butsuri Gakkai et al. | 2006
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Ultra-thin Oxide Lifetime Projection and Comparison of nFET and pFET for 90nm/65nm ApplicationLin, C. L. / Kao, T. / Chen, J. P. / Shieh, J. / Su, K. C. / Oyo Butsuri Gakkai et al. | 2006
- 426
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Theoretical Simulation of Dielectric Breakdown by Molecular Dynamics and Tight-Binding Quantum Chemistry MethodZhu, Z. / Chutia, A. / Tsuboi, H. / Koyama, M. / Endou, A. / Takaba, H. / Kubo, M. / Del Carpio, C. A. / Selvam, P. / Miyamoto, A. et al. | 2006
- 428
-
Electrical characteristic improvement of high-kappa gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)Chang-Liao, K. S. / Tsai, P. H. / Kao, H. Y. / Wang, T. K. / Huang, S. F. / Tsai, W. F. / Ai, C. F. / Oyo Butsuri Gakkai et al. | 2006
- 430
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Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional TransistorsCho, H. J. / Kim, T. Y. / Kim, Y. S. / Jang, S. A. / Lee, S. R. / Lim, K. Y. / Sung, M. G. / Kim, J. H. / Oh, S. W. / Jung, T. W. et al. | 2006
- 432
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Precise Extraction of Metal Gate Work Function from Bevel StructuresKuriyama, A. / Faynot, O. / Brevard, L. / Tozzo, A. / Clerc, L. / Mitard, J. / Vidal, V. / Deleonibus, S. / Cristoloveanu, S. / Iwai, H. et al. | 2006
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Work Function Modulation Using Thin Interdiffused Metal Layers for Dual Metal-Gate TechnologyLim, A. E. / Hwang, W. S. / Wang, X. P. / Kwong, D. L. / Yeo, Y. C. / Oyo Butsuri Gakkai et al. | 2006
- 436
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Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First ProcessesMatsukawa, T. / Liu, Y. X. / Endo, K. / Masahara, M. / Ishii, K. / Yamauchi, H. / Tsukada, J. / Suzuki, E. / Oyo Butsuri Gakkai et al. | 2006
- 438
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Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN~x/SiO~2 and TiN~x/HfO~2 Gate StacksLai, C. S. / Wang, J. C. / Yang, S. C. / Wong, J. Y. / Peng, S. K. / Oyo Butsuri Gakkai et al. | 2006
- 440
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Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVDWang, W. / Nabatame, T. / Shimogaki, Y. / Oyo Butsuri Gakkai et al. | 2006
- 442
-
Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate ElectrodesIkeno, D. / Furumai, K. / Kondo, H. / Sakashita, M. / Sakai, A. / Ogawa, M. / Zaima, S. / Oyo Butsuri Gakkai et al. | 2006
- 444
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Stress-Relaxation Process during Post-Annealing in SGOI Formed by H+ Irradiation and Oxidation-Induced Ge CondensationTanaka, M. / Sadoh, T. / Matsumoto, K. / Enokida, T. / Miyao, M. / Oyo Butsuri Gakkai et al. | 2006
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Microscopic Mechanism of Oxygen Transport during Thermal Silicon OxidationKageshima, H. / Uematsu, M. / Akiyama, T. / Ito, T. / Oyo Butsuri Gakkai et al. | 2006
- 448
-
Low-Leakage-Current Ultra-thin SiO~2 Film by Low-Temperature Neutral Beam OxidationIkoma, T. / Taguchi, C. / Fukuda, S. / Endo, K. / Watanabe, H. / Samukawa, S. / Oyo Butsuri Gakkai et al. | 2006
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Rate-Limiting Reaction of Layer-by-Layer Oxidation on Si(001) Surfaces: Dependece on the First Oxide Layer Growth KineticsOgawa, S. / Takakuwa, Y. / Oyo Butsuri Gakkai et al. | 2006
- 452
-
Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge SubstrateFukunaga, T. / Hosawa, K. / Hosoi, T. / Shibahara, K. / Oyo Butsuri Gakkai et al. | 2006
- 454
-
Low Leakage Current and Low Resistivity P^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature AnnealingImai, H. / Teramoto, A. / Sugawa, S. / Ohmi, T. / Oyo Butsuri Gakkai et al. | 2006
- 456
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Effects of CF~3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching ProcessesIchihashi, Y. / Ishikawa, Y. / Shimizu, R. / Mizuhara, H. / Okigawa, M. / Samukawa, S. / Oyo Butsuri Gakkai et al. | 2006
- 458
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Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si HeterostructureHara, A. / Tamura, N. / Nakamura, T. / Oyo Butsuri Gakkai et al. | 2006
- 460
-
Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiONUmezawa, N. / Shiraishi, K. / Miyazaki, S. / Uedono, A. / Akasaka, Y. / Inumiya, S. / Hasunuma, R. / Yamabe, K. / Momida, H. / Ohno, T. et al. | 2006
- 462
-
Formation of Mesoporous Pure Silica Zeolite FilmSeo, T. / Yoshino, T. / Hata, N. / Kikkawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 464
-
Pure-Silica Zeolite Films Prepared by a Vapor Phase Transport MethodCho, Y. / Kohmura, K. / Kikkawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 466
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Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room TemperatureYamaoka, K. / Kato, H. / Tsukiyama, D. / Yoshizako, Y. / Terai, Y. / Fujiwara, Y. / Oyo Butsuri Gakkai et al. | 2006
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-
Comparison of the Planarization Technologies for the Next GenerationKobata, I. / Wada, Y. / Toma, Y. / Suzuki, T. / Kodera, A. / Tokushige, K. / Fukunaga, A. / Tsujimura, M. / Oyo Butsuri Gakkai et al. | 2006
- 470
-
Application of Double Polishing Pad for Shallow Trench Isolation Chemical Mechanical Polishing ProcessSeo, Y. J. / Park, S. W. / Oyo Butsuri Gakkai et al. | 2006
- 472
-
Analyses of Interface Adhesion between Cu and SiCN Etch Stop Layers by Nanoindentation and Nanoscratch TestsChang, S. Y. / Lee, Y. S. / Oyo Butsuri Gakkai et al. | 2006
- 474
-
Characterization of pore sealing effect on trench sidewalls in porous low-k films by vapor adsorption insitu spectroscopic ellipsometryHata, N. / Koga, K. / Sumiya, K. / Takada, S. / Tada, M. / Kawamoto, Y. / Kanayama, T. / Oyo Butsuri Gakkai et al. | 2006
- 476
-
Anisotropic mechanical characterization of Cu single crystals and thin filmsShimizu, S. / Kojima, N. / Ye, J. / Oyo Butsuri Gakkai et al. | 2006
- 478
-
Ag diffusion in Low-K material (SiOC and BCN) and its challenges using as an interconnectionMazumder, M. K. / Moriyama, R. / Kimura, C. / Aoki, H. / Sugino, T. / Oyo Butsuri Gakkai et al. | 2006
- 480
-
Relationship between structure and conductance of nanometer-sized iridium contactsRyu, M. / Kizuka, T. / Oyo Butsuri Gakkai et al. | 2006
- 482
-
Effectiveness of Titanium and Carbon capping layer in NiSi formation with Ni film deposited by Atomic Layer DepositionYang, C. M. / Yun, S. W. / Ha, J. B. / Na, K. I. / Cho, H. I. / Lee, H. B. / Jeong, J. H. / Hahm, S. H. / Kong, S. H. / Lee, J. H. et al. | 2006
- 484
-
A Study of Relationship of Wafer Breakage vs. Wafer Edge AnalysisChen, S. H. / Chen, S. L. / Yeh, W. K. / Oyo Butsuri Gakkai et al. | 2006
- 486
-
Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared MicroscopeAjari, N. / Uchikoshi, J. / Hirokane, T. / Arima, K. / Morita, M. / Oyo Butsuri Gakkai et al. | 2006
- 488
-
Evaluation of Alignment Accuracy for Wafer Bonding Using Moire TechniqueWang, C. / Suga, T. / Oyo Butsuri Gakkai et al. | 2006
- 490
-
Sub-Atmospheric Chemical Vapor Deposition Process for Chip-to-Wafer 3-Dimensional IntegrationKikuchi, H. / Yamada, Y. / Ali, A. M. / Fukushima, T. / Tanaka, T. / Koyanagi, M. / Oyo Butsuri Gakkai et al. | 2006
- 492
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A Low Temperature Process of Bonding Fine Pitch Au/Sn Bumps in AirWang, Y. H. / Nishida, K. / Hutter, M. / Kimura, T. / Suga, T. / Oyo Butsuri Gakkai et al. | 2006
- 494
-
Finite element analysis of nanometer-scale contact for low temperature bondingHigashino, T. / Suga, T. / Oyo Butsuri Gakkai et al. | 2006
- 496
-
Low Temperature Interconnection of Cu Micro-bump on Polyimide and Ni/Au Film by Surface Activated Flip Chip MethodXu, Z. / Suga, T. / Oyo Butsuri Gakkai et al. | 2006
- 498
-
Impacts of Layout Dimensions and Ambient Temperatures on Silicon Based On-Chip RF InterconnectsTang, M. C. / Fang, Y. K. / Yeh, W. K. / Wang, R. L. / Oyo Butsuri Gakkai et al. | 2006
- 500
-
An Efficient Mobility Enhancement Engineering on 65nm FUSI CMOSFETs using a Second CESL ProcessLai, C. M. / Fang, Y. K. / Lin, C. T. / Yeh, W. K. / Hsu, C. W. / Hsu, C. H. / Chen, L. W. / Ma, M. / Oyo Butsuri Gakkai et al. | 2006
- 502
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Monte Carlo Simulation of Band-to-band Tunneling in Silicon DevicesXia, Z. L. / Du, G. / Song, Y. C. / Wang, J. / Liu, X. Y. / Kang, J. F. / Han, R. Q. / Oyo Butsuri Gakkai et al. | 2006
- 504
-
Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier StressLee, Y. J. / Fan, C. H. / Lin, W. Y. / Wan, C. C. / Huang, B. R. / Yang, W. L. / Chao, T. S. / Chuu, D. S. / Oyo Butsuri Gakkai et al. | 2006
- 506
-
Characterization of Subthreshold Behavior of Narrow-Channel SOI nMOSFET with Additional Side-Gate ElectrodesOkuyama, K. / Yoshikawa, K. / Sunami, H. / Oyo Butsuri Gakkai et al. | 2006
- 508
-
Gate Capacitance Analysis of Multi-finger MOSFETs for RF ApplicationsAoki, H. / Shimasue, M. / Oyo Butsuri Gakkai et al. | 2006
- 510
-
Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated StructuresSu, C. J. / Lin, H. C. / Hung, C. C. / Tsai, H. H. / Lee, Y. J. / Huang, T. Y. / Oyo Butsuri Gakkai et al. | 2006
- 512
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A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing SchemeJi, I. H. / Choi, Y. H. / Jeon, B. C. / Lee, S. C. / Kim, S. S. / Oh, K. H. / Yun, C. M. / Han, M. K. / Oyo Butsuri Gakkai et al. | 2006
- 514
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Efficient Improvement on Device Performance for sub-90nm SOI CMOSFETsLin, C. T. / Fang, Y. K. / Lai, C. M. / Yeh, W. K. / Hsu, C. W. / Hsu, C. H. / Chen, L. W. / Ma, M. / Oyo Butsuri Gakkai et al. | 2006
- 516
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Multiband Simulation of Quantum Electron Transport in Nano-Scale Devices Based on Non-Equilibrium Green's FunctionFitriawan, H. / Souma, S. / Ogawa, M. / Miyoshi, T. / Oyo Butsuri Gakkai et al. | 2006
- 518
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Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current DegradationChen, J. F. / Yang, D. H. / Lin, C. Y. / Wu, S. Y. / Oyo Butsuri Gakkai et al. | 2006
- 520
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Impact of Source/Drain Si~1~-~yCy Stressors on the Silicon-on-Insulator NMOSFETsHuang, J. / Wang, W. C. / Fan, J. W. / Chang, S. T. / Oyo Butsuri Gakkai et al. | 2006
- 522
-
An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive-Coupling Factor, and Power Gain Performances of RF Transformers for RFIC ApplicationsLin, Y. S. / Chen, C. C. / Tzeng, Y. R. / Liang, H. B. / Oyo Butsuri Gakkai et al. | 2006
- 524
-
Modeling of Drain Bias Dependence on Threshold Voltage Shift Under Negative Gate Bias Stress of a-Si: H TFTsTseng, H. Y. / Chiang, K. Y. / Kung, C. P. / Oyo Butsuri Gakkai et al. | 2006
- 526
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A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated CircuitJi, I. H. / Choi, Y. H. / Ha, M. W. / Han, M. K. / Oyo Butsuri Gakkai et al. | 2006
- 528
-
Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETsLu, C. Y. / Lu, C. S. / Hsieh, Y. L. / Lee, Y. J. / Lin, H. C. / Huang, T. Y. / Oyo Butsuri Gakkai et al. | 2006
- 530
-
Effects of Strained Layers on Zener Tunneling in Silicon NanostructuresMinari, H. / Mori, N. / Oyo Butsuri Gakkai et al. | 2006
- 532
-
A New Statistical Evaluation Method for the Variation of MOSFETsWatabe, S. / Sugawa, S. / Teramoto, A. / Ohmi, T. / Oyo Butsuri Gakkai et al. | 2006
- 534
-
A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels: A High Co-Integration PotentialWacquez, R. / Cerutti, R. / Coronel, P. / Cros, A. / Fleury, D. / Pouydebasque, A. / Bustos, J. / Harrison, S. / Loubet, N. / Borel, S. et al. | 2006
- 536
-
Characterization of RF LDMOS Transistors with Different Layout StructuresHu, H. H. / Chen, K. M. / Huang, G. W. / Chang, C. Y. / Lu, Y. C. / Yang, Y. C. / Cheng, E. / Oyo Butsuri Gakkai et al. | 2006
- 538
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Combined Negative Bias Temperature Instability and Hot Carrier Stress Effects in Low Temperature Poly-Si Thin Film TransistorsChen, C. Y. / Lee, J. W. / Chen, W. C. / Lin, H. Y. / Yeh, K. L. / Lee, P. H. / Shieh, M. S. / Wang, S. D. / Lei, T. F. / Oyo Butsuri Gakkai et al. | 2006
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N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device with High Latchup Immunity for High Voltage Operating I/O ApplicationSeo, Y. J. / Kim, K. H. / Oyo Butsuri Gakkai et al. | 2006
- 542
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Strain Efficiency Enhancement with Stress Intermedium Engineering (SIE) for Sub-65nm CMOS ScalingChen, H. M. / Huang, C. C. / Hwang, J. R. / Chang, C. Y. / Sheu, Y. M. / Yang, M. Y. / Wen, C. K. / Chen, S. C. / Tao, H. J. / Yang, F. L. et al. | 2006
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Empirical Model of Phonon-Limited Electron Mobility for Ultra-Thin Body SOI MOSFETYamamura, T. / Sato, S. / Omura, Y. / Oyo Butsuri Gakkai et al. | 2006
- 546
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Re-examination of 1/f Noise in FD-SOI for Practical Usage of Analog CircuitsKumar, A. / Domae, Y. / Miura, N. / Okamura, T. / Komatsubara, H. / Kita, Y. / Ida, J. / Oyo Butsuri Gakkai et al. | 2006
- 548
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Ultra-Narrow Silicon Nanowire (∼ 3 nm) Gate-All-Around MOSFETsSingh, N. / Lim, Y. F. / Rustagi, S. C. / Bera, L. K. / Agarwal, A. / Lo, G. Q. / Balasub, N. / Kwong, D. L. / Oyo Butsuri Gakkai et al. | 2006
- 550
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Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS TransistorsChen, J. F. / Lee, J. R. / Wu, K. M. / Su, Y. K. / Wang, H. C. / Lin, Y. C. / Hsu, S. L. / Oyo Butsuri Gakkai et al. | 2006
- 552
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Prominent Study on Si Substrate EM Loss and Suppressing TechniquesLee, C. Y. / Deng, J. D. S. / Ye, J. X. / Wang, C. Y. / Kao, C. H. / Oyo Butsuri Gakkai et al. | 2006
- 554
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Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory DeviceTakahashi, I. / Isogai, T. / Azumi, K. / Hirayama, M. / Teramoto, A. / Sugawa, S. / Ohmi, T. / Oyo Butsuri Gakkai et al. | 2006
- 556
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FinFET NAND Flash with Nitride/Si Nanocrystal/Nitride Hybrid Trap LayerChoe, J. D. / Lee, S. H. / Lee, J. J. / Cho, E. S. / Ahn, Y. / Choi, B. Y. / Sung, S. K. / No, J. / Chung, I. / Park, K. et al. | 2006
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2-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash MemoryLin, Y. H. / Yang, T. Y. / Chien, C. H. / Lei, T. F. / Oyo Butsuri Gakkai et al. | 2006
- 560
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A Novel NAND Flash Technology with Selective Epitaixial Growth Plug Structure for the Improvement in HV Transistor Breakdown VoltageJeon, S. / Kang, C. / Roh, U. / Lee, C. / Shin, Y. / Sim, J. / Kim, J. / Sel, J. / Jeong, Y. / Jung, W. et al. | 2006
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Ultra Low Operation Current Lateral Phase-Change MemoryYin, Y. / Niida, D. / Higano, N. / Miyachi, A. / Sone, H. / Hosaka, S. / Oyo Butsuri Gakkai et al. | 2006
- 564
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Lateral and vertical magnetic interaction in a submicron-sized Fe monolayer and a Fe/Au/Fe trilayer ring structureKohda, M. / Takagi, K. / Miyawaki, T. / Toyoda, K. / Fujita, A. / Nitta, J. / Oyo Butsuri Gakkai et al. | 2006
- 566
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Low Current Reversible Resistive Switching in Bismuth Titanate Deposited by Electron Cyclotron Resonance SputteringJin, Y. / Shinojima, H. / Shimada, M. / Oyo Butsuri Gakkai et al. | 2006
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Resistive Switching Properties of SrZrO~3-based Memory FilmsLin, C. C. / Tu, B. C. / Lin, C. H. / Tseng, T. Y. / Oyo Butsuri Gakkai et al. | 2006
- 570
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Thermal properties of NiO~y resistor practically free from the `forming' processKinoshita, K. / Yoshida, C. / Aso, H. / Aoki, M. / Sugiyama, Y. / Oyo Butsuri Gakkai et al. | 2006
- 572
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Resistance Switching Characteristics of Binary Metal OxidesPark, I. S. / Kim, K. R. / Ahn, J. / Oyo Butsuri Gakkai et al. | 2006
- 574
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Capacitorless DRAM Cell with Highly Scalable Surrounding Gate StructureJeong, H. / Lee, Y. S. / Kang, S. / Park, I. H. / Choi, W. Y. / Shin, H. / Lee, J. D. / Park, B. G. / Oyo Butsuri Gakkai et al. | 2006
- 576
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Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance ApplicationsHa, D. / Kim, J. H. / An, T. H. / Lee, S. S. / Jang, S. H. / Kim, S. H. / Kang, M. S. / Kim, H. T. / Lee, S. H. / Sim, M. Y. et al. | 2006
- 578
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Magnetically Damage-free Etching of MTJ Film for Future 0.24mum-rule-MRAMSMukai, T. / Ohshima, N. / Hada, H. / Samukawa, S. / Oyo Butsuri Gakkai et al. | 2006
- 580
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High Speed Resistive Switching in Pt/TiO~2/TiN Resistor for Multiple-Valued Memory DeviceYoshida, C. / Noshiro, H. / Iizuka, T. / Yamazaki, Y. / Kinoshita, K. / Aoki, M. / Sugiyama, Y. / Oyo Butsuri Gakkai et al. | 2006
- 582
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Very low voltage operation of p-Si/Al~2O~3/HfO~2/TiO~2/Al~2O~3/Pt single quantum well flash memory devices with good retentionMaikap, S. / Tzeng, P. J. / Wang, T. Y. / Tseng, S. S. / Lin, C. H. / Lee, H. Y. / Lee, L. S. / Li, P. W. / Yang, J. R. / Tsai, M. J. et al. | 2006
- 584
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Hardware Architecture for Pseudo-2D Hidden-Markov-Model-Based Face Recognition System Employing Laplace Distribution FunctionsSuzuki, Y. / Shibata, T. / Oyo Butsuri Gakkai et al. | 2006
- 586
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Binocular Range Image Sensor LSI with Fully Parallel Stereo Correlation ProcessingYoshida, T. / Ono, K. / Arima, Y. / Oyo Butsuri Gakkai et al. | 2006
- 588
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A Novel Vision Chip for High-Speed Target TrackingMiao, W. / Lin, Q. / Wu, N. / Oyo Butsuri Gakkai et al. | 2006
- 590
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Image-Scan Video Segmentation Architecture and FPGA ImplementationMorimoto, T. / Adachi, H. / Yamaoka, K. / Awane, K. / Koide, T. / Mattausch, H. J. / Oyo Butsuri Gakkai et al. | 2006
- 592
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An Edge Cache Memory Arhcitecture for Early Visual Processing VLSIsOzturk, O. / Shibata, T. / Oyo Butsuri Gakkai et al. | 2006
- 594
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A Hardware-Implementation-Friendly PCNN for Analog Image-Feature-Generation CircuitsChen, J. / Shibata, T. / Oyo Butsuri Gakkai et al. | 2006
- 596
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A Double-Feedback Voltage-Control-OscillatorChen, H. M. / Lee, S. H. / Jang, S. L. / Oyo Butsuri Gakkai et al. | 2006
- 598
-
Design of Cartesian Feedback Loop Linearization Chip for UHF band Using 0.6 mum Bi-CMOS TechnologyKang, M. S. / Chong, Y. J. / You, S. J. / Chung, T. J. / Oyo Butsuri Gakkai et al. | 2006
- 600
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Optimization on Layout Structures of LTPS TFTs for On-Panel ESD Protection DesignDeng, C. K. / Ker, M. D. / Chung, J. Y. / Sun, W. T. / Oyo Butsuri Gakkai et al. | 2006
- 602
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Low Power Spin-Transfer MRAM Writing Scheme with Selective Word Line BootstrapSugimura, T. / Sakaguchi, T. / Fukushima, T. / Tanaka, T. / Koyanagi, M. / Oyo Butsuri Gakkai et al. | 2006
- 604
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A Novel Open-Loop High-Speed CMOS Sample-and-HoldHadidi, K. / Mousazadeh, M. / Khoei, A. / Oyo Butsuri Gakkai et al. | 2006
- 606
-
Constant Magnetic Field Scaling in Inductive-Coupling Data LinkMizoguchi, D. / Miura, N. / Ishikuro, H. / Kuroda, T. / Oyo Butsuri Gakkai et al. | 2006
- 608
-
Scalable Motion Estimation Core for Multimedia System-on-Chip ApplicationsLai, Y. K. / Hsieh, T. E. / Oyo Butsuri Gakkai et al. | 2006
- 610
-
Investigation of Analog Performance for Uniaxial Strained PMOSFETsKuo, J. / Chen, W. / Su, P. / Oyo Butsuri Gakkai et al. | 2006
- 612
-
A 77GHz T/R MMIC One-Chip Set Fabricated by a 0.15mum GaAs mHEMT TechnologyKang, D. M. / Hong, J. Y. / Shim, J. Y. / Yoon, H. S. / Lee, K. H. / Oyo Butsuri Gakkai et al. | 2006
- 614
-
Broadband 60 GHz Power Amplifier MMIC with Excellent Gain-FlatnessChang, W. J. / Ji, H. G. / Lim, J. W. / Ahn, H. K. / Kim, H. / Oh, S. H. / Oyo Butsuri Gakkai et al. | 2006
- 616
-
Influence of T-gate shape on the device characteristics in SiN-assisted 0.12mum AlGaAs/InGaAs PHEMTAhn, H. / Lim, J. W. / Ji, H. G. / Chang, W. J. / Mun, J. K. / Kim, H. / Oyo Butsuri Gakkai et al. | 2006
- 618
-
Auger Effect of Hole Accumulation on Characteristics of InAlAs/InGaAs HEMTsTaguchi, H. / Murakami, H. / Oura, M. / Iida, T. / Takanashi, Y. / Oyo Butsuri Gakkai et al. | 2006
- 620
-
Pt Buried Gate E-pHEMT with High V~G~.~O~N and Reduced Surface Trap EffectsJang, K. / Seol, G. / Kim, S. / Her, J. / Lee, J. / Seo, K. / Oyo Butsuri Gakkai et al. | 2006
- 622
-
Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTsSaito, H. / Ito, S. / Kuzuhara, M. / Oyo Butsuri Gakkai et al. | 2006
- 624
-
Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In~0~.~3Ga~0~.~7As~0~.~9~9 N~0~.~0~1(Sb) Dilute ChannelSu, K. H. / Hsu, W. C. / Lee, C. S. / Lin, Y. S. / Hu, P. J. / Hsiao, R. S. / Chi, T. W. / Chi, J. Y. / Oyo Butsuri Gakkai et al. | 2006
- 626
-
The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converterWang, W. K. / Chang, Y. J. / Lin, C. K. / Lin, C. H. / Chan, Y. J. / Oyo Butsuri Gakkai et al. | 2006
- 628
-
A Size-Dependent Equivalent-Circuit Model of High Performance Near-Ballistic-Transport PhotodiodeWu, Y. S. / Lin, D. M. / Huang, F. H. / Chiu, W. Y. / Shi, J. W. / Chan, Y. J. / Oyo Butsuri Gakkai et al. | 2006
- 630
-
High Power Performance of Metamorphic HEMTs using Pd Schottky contactsLi, Y. J. / Wu, J. S. / Chiu, H. C. / Chan, Y. J. / Oyo Butsuri Gakkai et al. | 2006
- 632
-
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTsIde, T. / Shimizu, M. / Yagi, S. / Inada, M. / Piao, G. / Yano, Y. / Akutsu, N. / Okumura, H. / Arai, K. / Oyo Butsuri Gakkai et al. | 2006
- 634
-
Lock-in pixel using a Current-assisted photonic demodulator Implemented in 0.6mum Standard CMOSvan der Tempel, W. / Van Nieuwenhove, D. / Grootjans, R. / Kuijk, M. / Oyo Butsuri Gakkai et al. | 2006
- 636
-
AlGaN UV-B Photodetectors on AlN/sapphire templateJiang, H. / Egawa, T. / Oyo Butsuri Gakkai et al. | 2006
- 638
-
Development of Flexible Electrochromic Device with Thin Film ConfigurationYoshimura, H. / Sakaguchi, T. / Koshida, N. / Oyo Butsuri Gakkai et al. | 2006
- 640
-
Effect of Temperature on the Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Traveling-Carrier PhotodiodesJun, D. H. / Jang, J. H. / Song, J. I. / Oyo Butsuri Gakkai et al. | 2006
- 642
-
The Fabrication of the Double Ring Resonators Semiconductor LaserShih, M. C. / Wang, S. C. / Liang, C. W. / Weng, M. H. / Oyo Butsuri Gakkai et al. | 2006
- 644
-
AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap LayersChang, S. J. / Wu, M. H. / Hung, H. / Lin, Y. C. / Kuan, H. / Lin, R. M. / Chen, C. H. / Oyo Butsuri Gakkai et al. | 2006
- 646
-
Inverted GaN p-i-n photodiodes with a buried p^+/n^+^+ tunneling junctionLee, M. L. / Sheu, J. K. / Lai, W. C. / Shei, S. C. / Chang, S. J. / Oyo Butsuri Gakkai et al. | 2006
- 648
-
Optical constants of beta-FeSi~2 film on Si substrate obtained from transmittance and reflectance data and origin of Urbach-tailKakemoto, H. / Higuchi, T. / Shibata, H. / Wada, S. / Tsurumi, T. / Oyo Butsuri Gakkai et al. | 2006
- 650
-
Improved Device Characteristics of InGaAsN Photodetectors Using MIMS StructureSu, Y. K. / Chen, W. C. / Chuang, R. W. / Hsu, S. H. / Chen, B. Y. / Oyo Butsuri Gakkai et al. | 2006
- 652
-
Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting DiodesHuang, S. Y. / Horng, R. H. / Wang, W. K. / Yu, T. E. / Lin, P. R. / Wuu, D. S. / Oyo Butsuri Gakkai et al. | 2006
- 654
-
High Reliable Nitride Based LEDs with Internal ESD ProtectionShen, C. F. / Chang, S. J. / Shei, S. C. / Chang, C. S. / Chen, W. S. / Ko, T. K. / Chiou, Y. Z. / Oyo Butsuri Gakkai et al. | 2006
- 656
-
Design and Characterization of 1 by 128 Linear Arrays of Sensitivity Improved InGaAs/InP NIR PhotodetectorJo, Y. C. / Song, H. J. / Kim, H. / Choi, P. / Oyo Butsuri Gakkai et al. | 2006
- 658
-
Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling TechniqueWang, S. J. / Chen, T. M. / Uang, K. M. / Chen, S. L. / Kuo, D. M. / Kuo, H. Y. / Liou, B. W. / Yang, S. H. / Oyo Butsuri Gakkai et al. | 2006
- 660
-
Enhancement of Carrier Confinement by the Multiquantum Barriers in Blue InGaN/GaN Multiple Quantum Well Light-emitting DiodesWang, J. C. / Shen, H. T. / Nee, T. E. / Oyo Butsuri Gakkai et al. | 2006
- 662
-
Effect of Residual Stress in Thin Films on the Radiation Spectrum of a Semiconductor LaserMiura, H. / Kawauchi, T. / Suzuki, K. / Sasaki, M. / Oyo Butsuri Gakkai et al. | 2006
- 664
-
Photodiode Model for CMOS Image Sensor SPICE SimulationChiang, W. J. / Chen, H. C. / King, Y. C. / Oyo Butsuri Gakkai et al. | 2006
- 666
-
Characterization of the ZnO metal-semiconductor-metal ultraviolet photodetectors with Au contact electrodesYoung, S. J. / Ji, L. W. / Chang, S. J. / Su, Y. K. / Du, X. L. / Oyo Butsuri Gakkai et al. | 2006
- 668
-
High electrical stress influence on reliability characteristics of polarization-induced GaN-InGaN MQW LEDsJang, J. S. / Lee, H. H. / Oyo Butsuri Gakkai et al. | 2006
- 670
-
Ultraviolet Random Laser Action of Nano-structured Zinc OxideLai, F. I. / Chen, W. C. / Kuo, S. Y. / Cheng, C. P. / Oyo Butsuri Gakkai et al. | 2006
- 672
-
Mechanism investigation of chlorine-treated InGaN/GaN light-emitting diodesChen, P. S. / Lee, C. T. / Oyo Butsuri Gakkai et al. | 2006
- 674
-
Optical Properties of InGaN/GaN Light Emitting Diodes Grown by Pulsed-Trimethylindium-Flow ProcessHsueh, T. H. / Sheu, J. K. / Lai, W. C. / Wang, Y. T. / Kuo, H. C. / Wang, S. C. / Oyo Butsuri Gakkai et al. | 2006
- 676
-
Polarization field effect on the electrical and electronic band characteristics at the interface between metal and strained GaN/InGaN layerJang, J. S. / Jeon, S. R. / Jung, M. C. / Shin, H. J. / Lee, H. H. / Oyo Butsuri Gakkai et al. | 2006
- 678
-
Characteristic comparison of GaN grown on patterned sapphire substrates following growth timeKang, D. H. / Song, J. C. / Shim, B. Y. / Ko, E. A. / Kim, D. W. / Lee, C. R. / Oyo Butsuri Gakkai et al. | 2006
- 680
-
Efficient stress relief in GaN heteroepitaxy on Si(111) using various metal bufferKo, E. A. / Kim, D. W. / Shim, B. Y. / Lee, I. W. / Lee, C. R. / Oyo Butsuri Gakkai et al. | 2006
- 682
-
Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)Arakawa, T. / Takimoto, K. / Miyazaki, S. / Yamaguchi, K. / Haneji, N. / Noh, J. H. / Tada, K. / Oyo Butsuri Gakkai et al. | 2006
- 684
-
Photoluminescence characterization of type II Zn~0~.~9~7Mn~0~.~0~3Se/ZnSe~0~.~9~2Te~0~.~0~8 multiple-quantum-well structuresShiu, J. J. / Chen, W. L. / Lin, D. Y. / Yang, C. S. / Chou, W. C. / Oyo Butsuri Gakkai et al. | 2006
- 686
-
Growth of III-V epitaxial material on Si Substrates for high-speed electronic applicationsLuo, G. L. / Hsieh, Y. C. / Yang, T. H. / Chang, E. Y. / Oyo Butsuri Gakkai et al. | 2006
- 688
-
Self-assembled GaN nano-column grown on Si (111) substrate using Au+Ga alloy seeding method by MOCVDShim, B. Y. / Ko, E. A. / Song, J. C. / Kang, D. H. / Kim, D. W. / Lee, I. H. / Lee, C. R. / Oyo Butsuri Gakkai et al. | 2006
- 690
-
The Influence of Carbon Content on Material and Field Emission Properties of Nanowires Self-synthesized from Sputter-deposited WC~x FilmsKo, R. M. / Wang, S. J. / Chen, C. H. / Tsai, W. C. / Kuo, Y. C. / Chang, C. L. / Wen, Z. F. / Oyo Butsuri Gakkai et al. | 2006
- 692
-
A Novel Method for the Preparation of Si NanowiresLin, R. / Lin, H. C. / Yang, J. Y. / Shen, S. W. / Su, C. J. / Oyo Butsuri Gakkai et al. | 2006
- 694
-
In situ High-Resolution Transmission Electron Microscopy of Deformation of Multi-walled Carbon Nanometer-sized capsulesKato, R. / Asaka, K. / Miyazawa, K. / Kizuka, T. / Oyo Butsuri Gakkai et al. | 2006
- 696
-
Enlargement of Crystal-Grains in Thin Silicon Films Using Continuous-Wave Laser IrradiationFujii, S. / Kuroki, S. / Kotani, K. / Ito, T. / Oyo Butsuri Gakkai et al. | 2006
- 698
-
Kinetic Monte Carlo (KMC) Modeling for Boron Diffusion in Strained SiliconKim, Y. K. / Yoon, K. S. / Won, T. / Oyo Butsuri Gakkai et al. | 2006
- 700
-
Ab-initio Study on Energy Barrier for Neutral Indium Migration in a Silicon SubstrateYoon, K. S. / Hwang, C. O. / Won, T. / Oyo Butsuri Gakkai et al. | 2006
- 702
-
Moisture-Barrier Properties of Carbon-coated Silicon Oxide FilmsChen, W. R. / Guo, H. M. / Meen, T. H. / Wu, K. H. / Juang, F. S. / Huang, C. J. / Oyo Butsuri Gakkai et al. | 2006
- 704
-
TiO~2 nanocrystal prepared by ALD system at elevated temperatureLin, C. H. / Wang, C. C. / Tzeng, P. J. / Maikap, S. / Lee, H. Y. / Lee, L. S. / Tsai, M. J. / Oyo Butsuri Gakkai et al. | 2006
- 706
-
Synthesis of Au/TiO~2 Core-Shell Nanoparticles from TTIP and Thermal Resistance Effect of TiO~2 ShellKwon, H. / Lim, Y. / Yu, Y. / Oyo Butsuri Gakkai et al. | 2006
- 708
-
Electrical Characteristics and Preparation of (Ba~0~.~5Sr~0~.~5)TiO~3 Ferroelectric Films by Spray Pyrolysis and Rapid Thermal AnnealingKoo, H. S. / Chen, M. / Ku, H. K. / Kawai, T. / Oyo Butsuri Gakkai et al. | 2006
- 710
-
Photoluminescence Characteristics of YAG:Ce Phosphor by Sol-Gel MethodChoi, H. W. / Lee, S. K. / Cha, J. H. / Kim, K. H. / Oyo Butsuri Gakkai et al. | 2006
- 712
-
Development of Accelerated Large-Scale Electronic Structure Calculation Program for Designing of Rare Earth PhosphorsEndou, A. / Onuma, H. / Lv, C. / Govindasamy, A. / Tsuboi, H. / Koyama, M. / Takaba, H. / Kubo, M. / Del Carpio, C. A. / Miyamoto, A. et al. | 2006
- 714
-
Study of the Improved Conductivity of Indium-tin Oxide Films Cosputtered with Zinc Oxide at Room Temperature from Thermal DegradationsLiu, D. S. / Lin, C. H. / Sheu, C. S. / Lee, C. T. / Oyo Butsuri Gakkai et al. | 2006
- 716
-
Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic EmissionWatabe, Y. / Honda, Y. / Koshida, N. / Oyo Butsuri Gakkai et al. | 2006
- 718
-
Mechanical Properties of Nanometer-sized Fullerene C~6~0 Whiskers Studied by In situ High-Resolution Transmission Electron MicroscopyKato, R. / Asaka, K. / Miyazawa, K. / Kizuka, T. / Oyo Butsuri Gakkai et al. | 2006
- 720
-
Theoretical Study on the Electronic and Structural Properties of p-Type Transparent Conducting Metal OxidesLv, C. / Wang, X. / Govindasamy, A. / Tsuboi, H. / Koyama, M. / Endou, A. / Takaba, H. / Kubo, M. / Del Carpio, C. A. / Selvam, P. et al. | 2006
- 722
-
Field Emission Improvement from Pillar Array of Aligned Carbon NanotubesJuan, C. P. / Lin, K. C. / Lai, R. L. / Yang, J. Y. / Cheng, H. C. / Oyo Butsuri Gakkai et al. | 2006
- 724
-
Macroscopic Model of Current-induced Magnetic Switching Effect in Pseudo-spin-valve StructureRen, M. / Zhang, L. / Hu, J. / Deng, N. / Chen, P. / Oyo Butsuri Gakkai et al. | 2006
- 726
-
Electrical Characterization of Carbon NanowallsUra, M. / Takeuchi, W. / Tokuda, Y. / Hiramatsu, M. / Kano, H. / Hori, M. / Oyo Butsuri Gakkai et al. | 2006
- 728
-
Optical Properties of Size-Controlled Porous Nanostructures Formed on n-InP (001) Substrates by Electrochemical ProcessFujino, T. / Sato, T. / Hashizume, T. / Oyo Butsuri Gakkai et al. | 2006
- 730
-
Development of a Thermal Conductivity Prediction Simulator Including Conduction Electron and Lattice Vibration for Semiconductor, Insulator and Conduction Electron for MetalTsuboi, H. / Arunabhirun, C. / Zhu, Z. / Lv, C. / Koyama, M. / Endou, A. / Takaba, H. / Kubo, M. / Del Carpio, C. A. / Miyamoto, A. et al. | 2006
- 732
-
Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by KFM with Piezo-resistive CantileverTakihara, M. / Igarashi, T. / Ujihara, T. / Takahashi, T. / Oyo Butsuri Gakkai et al. | 2006
- 734
-
A Spin Drag Effect in Temperature Dependence of Spin-Polarized Electron MobilitiesTakahashi, Y. / Sato, Y. / Hirose, F. / Kawaguchi, H. / Oyo Butsuri Gakkai et al. | 2006
- 736
-
Hybrid simulation of the RF-SET and its charge sensitivity analysisManoharan, M. / Mizuta, H. / Oda, S. / Oyo Butsuri Gakkai et al. | 2006
- 738
-
Electrical Characteristics and Preparation of Nanostructured Pb(Zr~0~.~5Ti~0~.~5)O~3 Ferroelectric Films by Spray PyrolysisChen, M. / Koo, H. S. / Hotta, Y. / Kawai, T. / Oyo Butsuri Gakkai et al. | 2006
- 740
-
A transmission-type radio-frequency single-electron transistor (RF-SET) with an in-plane-gate SET (IPG-SET)Yu, Y. S. / Kim, E. S. / Lee, C. H. / Kim, S. H. / Son, S. H. / Hwang, S. W. / Ahn, D. / Oyo Butsuri Gakkai et al. | 2006
- 742
-
High Efficiency White Organic Light-Emitting Diodes with Double-Doped in a Single Emissive LayerSu, S. H. / Hou, C. C. / Cheng, W. C. / Li, J. F. / Shieh, R. S. / Yokoyama, M. / Oyo Butsuri Gakkai et al. | 2006
- 744
-
Fabrication of color-stable organic light-emitting devices by utilizing incomplete energy transformHuang, C. S. / Su, Y. K. / Wu, B. T. / Oyo Butsuri Gakkai et al. | 2006
- 746
-
Effect of SnDP(HPB)~2 as Hole Blocking Layer in OLEDKim, D. E. / Kim, B. S. / Kim, W. S. / Kwon, O. K. / Lee, B. J. / Kwon, Y. S. / Oyo Butsuri Gakkai et al. | 2006
- 748
-
Theoretical Study on the Photophyscial Properties of an Efficient Sensitizer for Nanocrystalline TiO~2-Based Solar CellsGovindasamy, A. / Lv, C. / Tsuboi, H. / Koyama, M. / Endou, A. / Takaba, H. / Del Carpio, C. A. / Kubo, M. / Miyamoto, A. / Oyo Butsuri Gakkai et al. | 2006
- 750
-
Dye Sensitization Effect on Photocurrent Generation of Porphyrin-Polythiophene Composite FilmsSugawa, K. / Kakutani, K. / Akiyama, T. / Yamada, S. / Takechi, K. / Shiga, T. / Motohiro, M. / Nakayama, H. / Kohama, K. / Oyo Butsuri Gakkai et al. | 2006
- 752
-
Thermo Effects on the Novel Soft Electronic SubstratesYu, H. H. / Tseng, M. C. / Hwang, K. C. / Hwang, S. J. / Oyo Butsuri Gakkai et al. | 2006
- 754
-
A Low Voltage Memory (˜2V) Based on Polystyrene for Printable ElectronicsChang, C. C. / Lin, H. T. / Pei, Z. / Lou, W. M. / Jong, C. A. / Chan, Y. J. / Oyo Butsuri Gakkai et al. | 2006
- 756
-
The Measurement of Electrical Conduction of Self-Assembled Viologen Derivatives Using Scanning Tunneling MicroscopyLee, N. S. / Shin, H. K. / Qian, D. J. / Kwon, Y. S. / Oyo Butsuri Gakkai et al. | 2006
- 758
-
Effect of Oxygen Contents on the Property of Hydrophobic Thin Films Deposited on Flexible Substrates Using Plasma-enhanced CVDLiu, D. S. / Wu, C. Y. / Huang, B. W. / Lee, C. T. / Oyo Butsuri Gakkai et al. | 2006
- 760
-
Synchrotron Radiation Studies of the Orientation of Thin Silicon Phthalocyanine Dichloride Film on HOPG SubstrateJuzhi, D. / Sekiguchi, T. / Baba, Y. / Hirao, N. / Oyo Butsuri Gakkai et al. | 2006
- 762
-
Reduction of Electrical Damage due to Au/Pentacene Contact Formation by Introducing Ar Gas during Au EvaporationSawabe, T. / Okamura, K. / Miyamoto, T. / Nakamura, M. / Kudo, K. / Oyo Butsuri Gakkai et al. | 2006
- 764
-
Elemental analysis of novel organic semiconductor materials for molecular electronicsShcherbyna, S. / Baranov, V. / Bohme, D. K. / Oyo Butsuri Gakkai et al. | 2006
- 766
-
Fabrication of Nano-gate Structure Organic Static Induction Transistor using Electron Beam LithographyFukuda, M. / Yamaguchi, H. / Iizuka, M. / Kudo, K. / Oyo Butsuri Gakkai et al. | 2006
- 768
-
A Simple Method for Extraction of Contact Resistance in Organic Thin Film TransistorJung, B. C. / Song, C. K. / Oyo Butsuri Gakkai et al. | 2006
- 770
-
Analysis of pentacene FET characteristics using a Maxwell-Wagner modelTamura, R. / Lim, E. / Manaka, T. / Iwamoto, M. / Oyo Butsuri Gakkai et al. | 2006
- 772
-
Fabrication and Ethanol Vapor Treatment of Magnesium Phthalocyanine Field Effect TransistorShinbo, K. / Akazawa, T. / Ikarashi, H. / Ohdaira, Y. / Kato, K. / Kaneko, F. / Oyo Butsuri Gakkai et al. | 2006
- 774
-
Full-swing Pentacene Organic Inverter with Long-channel Driver and Short-channel LoadLee, C. A. / Park, D. W. / Jung, K. D. / Lee, J. D. / Park, B. G. / Oyo Butsuri Gakkai et al. | 2006
- 776
-
Physical Properties and Fabricating Technology of Novel Type Resist for Color Filter in TFT LCDPan, P. C. / Wu, H. C. / Koo, H. S. / Kawai, T. / Oyo Butsuri Gakkai et al. | 2006
- 778
-
Fabrication of vertical organic light emitting transistor using thin-film ZnOYamauchi, H. / Iizuka, M. / Kudo, K. / Oyo Butsuri Gakkai et al. | 2006
- 780
-
Significantly Enhancing Luminance of Organic Light-Emitting Diodes (OLEDs) with Doping Iodine and Nitrogen TreatmentChen, S. F. / Fang, Y. K. / Hou, S. C. / Lin, F. S. / Lin, C. Y. / Chang, S. H. / Chou, T. H. / Oyo Butsuri Gakkai et al. | 2006
- 782
-
High Performance RF Passive Devices on Plastic Substrates for RFIC ApplicationHung, B. F. / Chen, C. C. / Kao, H. L. / Chin, A. / Oyo Butsuri Gakkai et al. | 2006
- 784
-
Development of a Functional Chromosome Nano-Dissection System Using Porous Anodic Alumina Pattern Chip and AFM CantileverKim, D. K. / Saito, M. / Kwon, Y. S. / Tamiya, E. / Oyo Butsuri Gakkai et al. | 2006
- 786
-
Effect of Chemical Modification of the Substrate Surface on Lipid Bilayer FormationIsono, T. / Tanaka, H. / Ogino, T. / Oyo Butsuri Gakkai et al. | 2006
- 788
-
Biosensing with CN~x multi-wall carbon nanotubesBurch, H. J. / Contera, S. A. / Toldeo, N. C. / de Planque, M. R. R. / Grobert, N. / Voitchovsky, K. / Ryan, J. F. / Oyo Butsuri Gakkai et al. | 2006
- 790
-
Modifications on pH sensitivity of Si3N4 membrane by CF4 plasma and rapid thermal annealing for ISFET/REFET applicationsLai, C. S. / Lue, C. E. / Yang, C. M. / Jao, J. H. / Oyo Butsuri Gakkai et al. | 2006
- 792
-
Modulation of the Density of Assembled Gold Nanoparticles and Local Plasmon Coupling Effect on SPR Spectrum ResponseLi, X. / Tamada, K. / Hara, M. / Oyo Butsuri Gakkai et al. | 2006
- 794
-
Electric Properties in Biofilms Studied by Resonant Auger Electron SpectroscopyBaba, Y. / Sekiguchi, T. / Shimoyama, I. / Nath, K. G. / Hirao, N. / Oyo Butsuri Gakkai et al. | 2006
- 796
-
Micro molding of three-dimensional metal structure by non-electro plating of photopolymerized resinYoshimura, T. / Maruo, S. / Mukai, K. / Oyo Butsuri Gakkai et al. | 2006
- 798
-
High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC ApplicationsLin, Y. S. / Chen, C. C. / Liang, H. B. / Wang, T. / Lu, S. S. / Oyo Butsuri Gakkai et al. | 2006
- 800
-
Characteristics of RF MEMS Switches for Communication SystemsLai, Y. L. / Chen, Y. H. / Oyo Butsuri Gakkai et al. | 2006
- 802
-
Investigation of Structures of Microwave MEMS SwitchesLai, Y. L. / Lin, C. H. / Oyo Butsuri Gakkai et al. | 2006
- 804
-
Semiconductor Nanowire Devices for Future Logic and Memory (Invited)Yu, B. / Meyyappan, M. / Oyo Butsuri Gakkai et al. | 2006
- 806
-
Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge TransistorKobayashi, M. / Miyaji, K. / Hiramoto, T. / Oyo Butsuri Gakkai et al. | 2006
- 808
-
High-PVCR Si/Si~1~-~x Ge~x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer BufferMaekawa, H. / Sano, Y. / Suda, Y. / Oyo Butsuri Gakkai et al. | 2006
- 810
-
High-Density Floating Nanodots Memory Produced by Cage-Shaped ProteinYamada, K. / Yoshii, S. / Kumagai, S. / Miura, A. / Uraoka, Y. / Fuyuki, T. / Yamashita, I. / Oyo Butsuri Gakkai et al. | 2006
- 812
-
Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistorKawata, Y. / Khalafalla, M. / Usami, K. / Tsuchiya, Y. / Mizuta, H. / Oda, S. / Oyo Butsuri Gakkai et al. | 2006
- 814
-
Electrostatic coupling between two double-quantum dots studied by resonant tunneling currentShinkai, G. / Fujisawa, T. / Hayashi, T. / Hirayama, Y. / Oyo Butsuri Gakkai et al. | 2006
- 816
-
Photo Illumination Effect on Single-Electron-Tunneling Current Through a Thin Bicrystal SOI FETNuryadi, R. / Burhanudin, Z. A. / Yamano, R. / Ishino, T. / Ishikawa, Y. / Tabe, M. / Oyo Butsuri Gakkai et al. | 2006
- 818
-
Fabrication of Ge Quantum-dots by Oxidation of Si~1~-~xGe~x-on-insulator Nanowires and its Applications to Resonant Tunneling Diodes and Single-electron/Single-hole TransistorsLai, W. T. / Li, P. W. / Oyo Butsuri Gakkai et al. | 2006
- 820
-
Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wiresMoraru, D. / Ono, Y. / Inokawa, H. / Yokoi, K. / Nuryadi, R. / Ikeda, H. / Tabe, M. / Oyo Butsuri Gakkai et al. | 2006
- 822
-
SET-based Flexible Multi-valued NAND and NOR Gates for Half-AdderLee, C. K. / Kim, S. J. / Choi, S. J. / Hwang, J. H. / Chung, R. S. / Lee, J. J. / Kim, M. S. / Shin, S. J. / Choi, J. B. / Yu, Y. S. et al. | 2006
- 824
-
Multi-Functionality of Novel Structured Tunneling DevicesChoi, W. Y. / Song, J. Y. / Kim, J. P. / Lee, J. D. / Park, B. G. / Oyo Butsuri Gakkai et al. | 2006
- 826
-
Organic Molecular Wires (Invited)Hadley, P. / Durkut, M. / Oyo Butsuri Gakkai et al. | 2006
- 828
-
Possible Non-equilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact TransistorKhalafalla, M. A. H. / Mizuta, H. / Oda, S. / Durrani, Z. A. K. / Oyo Butsuri Gakkai et al. | 2006
- 830
-
Low Temperature Characteristics of Ambipolar SiO~2/Si/SiO~2 Hall-bar DevicesTakashina, K. / Gaillard, B. / Ono, Y. / Hirayama, Y. / Oyo Butsuri Gakkai et al. | 2006
- 832
-
Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall EffectSekine, Y. / Akazaki, T. / Nitta, J. / Oyo Butsuri Gakkai et al. | 2006
- 834
-
A Field-Effect Transistor with a Deposited Graphite Thin FilmInokawa, H. / Nagase, M. / Hirono, S. / Goto, T. / Yamaguchi, H. / Torimitsu, K. / Oyo Butsuri Gakkai et al. | 2006
- 836
-
Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole TransistorMiyaji, K. / Hiramoto, T. / Oyo Butsuri Gakkai et al. | 2006
- 838
-
Optoelectronic Tweezers - Optical Manipulation Using LEDs and Spatial Light Modulators (Invited)Wu, M. C. / Oyo Butsuri Gakkai et al. | 2006
- 840
-
Novel Opto-Electro Printed Circuit Board with Polynorbornene Optical WaveguideFujiwara, M. / Shirato, Y. / Owari, H. / Watanabe, K. / Matsuyama, M. / Takahama, K. / Mori, T. / Miyao, K. / Choki, K. / Fukushima, T. et al. | 2006
- 842
-
Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical WaveguidesChoi, W. S. / Kim, D. H. / Khisa, S. / Zhao, W. / Bae, J. W. / Adesida2, I. / Jang, J. H. / Oyo Butsuri Gakkai et al. | 2006
- 844
-
Fabrication Method of Microlens Array Using Oxidized Porous Silicon Bulk Micromachining and PDMS Replication MoldingYeo, S. K. / Ha, M. L. / Kwon, Y. S. / Oyo Butsuri Gakkai et al. | 2006
- 846
-
Photocell system driven by MechanoluminescenceTerasaki, N. / Xu, C. N. / Imai, Y. / Yamada, H. / Oyo Butsuri Gakkai et al. | 2006
- 848
-
40G bit/s NRZ wavelength converter with narrow active waveguides and inverted operationHatta, T. / Miyahara, T. / Miyazaki, Y. / Takagi, K. / Matsumoto, K. / Aoyagi, T. / Mishina, K. / Maruta, A. / Kitayama, K. / Oyo Butsuri Gakkai et al. | 2006
- 850
-
Improved Waveguide Structure for All Optical Switches based on Intersubband Transition in II-VI Quantum WellsAkita, K. / Akimoto, R. / Hasama, T. / Ishikawa, H. / Takanashi, Y. / Oyo Butsuri Gakkai et al. | 2006
- 852
-
Tunable Slow Light of 1.3mum Region in Quantum Dots at Room TemperatureGotoh, H. / Chang, S. W. / Chuang, S. L. / Okamoto, H. / Shibata, Y. / Oyo Butsuri Gakkai et al. | 2006
- 854
-
Integrated Optical Beam Splitters Employing Symmetric Mode Mixing in SiO~2/SiON/SiO~2 Multimode Interference (MMI) WaveguidesLiao, Z. L. / Chuang, R. W. / Chang, C. K. / Oyo Butsuri Gakkai et al. | 2006
- 856
-
InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product PerformanceChiu, W. Y. / Wang, W. K. / Wu, Y. S. / Huang, F. H. / Lin, D. M. / Chan, Y. J. / Shi, J. W. / Oyo Butsuri Gakkai et al. | 2006
- 858
-
Deep Trench Isolation for Pixel Crosstalk Suppression in Active Pixel Sensor with 1.7mum pixel pitchPark, B. J. / Moon, C. R. / Lee, Y. W. / Kim, D. W. / Paik, K. H. / Yoo, J. R. / Yoo, Y. S. / Jon, Y. / Koo, C. H. / Bang, S. C. et al. | 2006
- 860
-
Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid GateHashimoto, H. / Yamada, R. / Arima, K. / Uchikoshi, J. / Morita, M. / Oyo Butsuri Gakkai et al. | 2006
- 862
-
A Compact Single-Photon Avalanche Diode in a Deep-Submicron CMOS TechnologyFinkelstein, H. / Hsu, M. J. / Esener, S. / Oyo Butsuri Gakkai et al. | 2006
- 864
-
Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer DevicesMeziani, Y. M. / Hanabe, M. / Otsuji, T. / Sano, E. / Oyo Butsuri Gakkai et al. | 2006
- 866
-
Optical Responses of Josephson Vortex flow Transistor under irradiation of femtosecond laser pulsesKawayama, I. / Doda, Y. / Murakami, H. / Tonouchi, M. / Oyo Butsuri Gakkai et al. | 2006
- 868
-
Digital Microfluidics for Chemical and Biological Applications (Invited)Garrell, R. L. / Oyo Butsuri Gakkai et al. | 2006
- 870
-
DNA Size Separation Employing Quartz Nano-Pillars with Different AllocationsOgawa, R. / Kaji, N. / Hashioka, S. / Baba, Y. / Horiike, Y. / Oyo Butsuri Gakkai et al. | 2006
- 872
-
Integrated DNA Purification and Detection Device for Diagnosis of Infection DiseasesHashioka, S. / Ogawa, R. / Ogawa, H. / Horiike, Y. / Oyo Butsuri Gakkai et al. | 2006
- 874
-
RNA Trap using Microfluidic Chip with Taper Shaped ChannelUeno, K. / Nagasaka, W. / Tomizawa, Y. / Nakamori, Y. / Tamiya, E. / Takamura, Y. / Oyo Butsuri Gakkai et al. | 2006
- 876
-
Manipulation of DNA Molecules in Nanopores by Electric Field for Porous Silicon Based DNA Microarray ApplicationsYamaguchi, R. / Ishibashi, K. / Miyamoto, K. / Kimura, Y. / Niwano, M. / Oyo Butsuri Gakkai et al. | 2006
- 878
-
Microchip based Fabrication of Curved Microstructures like Spider in Nature (Invited)Lee, S. H. / Oyo Butsuri Gakkai et al. | 2006
- 880
-
First Selective Detection of Proteins Using Top-Gate Carbon Nanotube Field Effect TransistorAbe, M. / Murata, K. / Kojima, A. / Ifuku, Y. / Shimizu, M. / Ataka, T. / Matsumoto, K. / Oyo Butsuri Gakkai et al. | 2006
- 882
-
High-efficiency cell membrane perforation technique based on self-organized ZnO nanorodsSeki, M. / Saito, T. / Tabata, H. / Oyo Butsuri Gakkai et al. | 2006
- 884
-
In-situ Monitoring of DNA Hybridization Using Surface Infrared SpectroscopyMiyamoto, K. / Yamaguchi, R. / Ishibashi, K. / Kimura, Y. / Niwano, M. / Oyo Butsuri Gakkai et al. | 2006
- 886
-
Si-Based Planer Type Ion-channel BiosensorsUno, H. / Zhang, Z. L. / Chiang, T. Y. / Suzui, K. / Tero, R. / Nakao, S. / Seki, S. / Tagawa, S. / Urisu, T. / Oyo Butsuri Gakkai et al. | 2006
- 888
-
Membranes as Self-Assembling Coating of Solid State Device Components: Integration of Submicron Electrical Circuitry with Biological Systemsde Planque, M. R. R. / Toledo, N. C. / Contera, S. A. / Ryan, J. F. / Oyo Butsuri Gakkai et al. | 2006
- 890
-
Evaluation of Electrical Stimulus Current to Retina Cells for Retinal Prosthesis by Using Platinum-Black (Pt-b) Stimulus Electrode ArrayWatanabe, T. / Komiya, K. / Kobayashi, T. / Kobayashi, R. / Fukushima, T. / Tomita, H. / Sugano, E. / Sato, M. / Kurino, H. / Tanaka, T. et al. | 2006
- 892
-
Development of a CMOS Image Sensor for Real Time In Vivo Imaging of the Protease Activity Inside the Mouse HippocampusNg, D. C. / Nakagawa, T. / Tokuda, T. / Kagawa, K. / Nunoshita, M. / Tamura, H. / Shiosaka, S. / Ohta, J. / Oyo Butsuri Gakkai et al. | 2006
- 894
-
An Optical/Potential/Voltammetric Multifunctional CMOS Image Sensor for On-chip Biomolecular/Neural Sensing ApplicationsTokuda, T. / Kadowaki, I. / Kagawa, K. / Nunoshita, M. / Ohta, J. / Oyo Butsuri Gakkai et al. | 2006
- 896
-
Large scale electrode array based on distributed microchip architecture for retinal prosthesisOhta, J. / Tokudal, T. / Sugitani, S. / Taniyama, M. / Nunoshita, M. / Uehara, A. / Terasawa, Y. / Tano, Y. / Oyo Butsuri Gakkai et al. | 2006
- 898
-
Development of Si Long Microprobe (SiLM) for Platform of Intelligent Neural Implant MicrosystemKobayashi, R. / Watanabe, T. / Komiya, K. / Fukushima, T. / Sakamoto, K. / Kurino, H. / Tanaka, T. / Katayama, N. / Mushiake, H. / Koyanagi, M. et al. | 2006
- 900
-
Liquid Sensing by Nano-gap Device with Treated SurfaceHirokane, T. / Hashimoto, H. / Kanzaki, D. / Takegawa, T. / Morita, S. / Urabe, S. / Arima, K. / Uchikoshi, J. / Morita, M. / Oyo Butsuri Gakkai et al. | 2006
- 902
-
Physical Sensors in MEMS Technology (Invited)Maenaka, K. / Oyo Butsuri Gakkai et al. | 2006
- 904
-
Piezoelectric Optical Micro Scanner with Built-in Torsion SensorKobayashi, T. / Maeda, R. / Oyo Butsuri Gakkai et al. | 2006
- 906
-
High-Q Piezoelectrically Actuated RF MEMS Tunable CapacitorNishigaki, M. / Nagano, T. / Miyazaki, T. / Kawakubo, T. / Itaya, K. / Oyo Butsuri Gakkai et al. | 2006
- 908
-
Solenoid RF Transformer and BalunYook, J. M. / Ko, J. H. / Kwon, Y. S. / Oyo Butsuri Gakkai et al. | 2006
- 910
-
Fowler-Nordheim Tunneling in Electromigrated Break Junctions with Porphyrin DerivativesNoguchi, Y. / Nagase, T. / Ueda, R. / Kamikado, T. / Kubota, T. / Mashiko, S. / Oyo Butsuri Gakkai et al. | 2006
- 912
-
Effect of UV/ozone Treatment on Nanogap Electrodes for Molecular DevicesGoto, T. / Inokawa, H. / Sumitomo, K. / Nagase, M. / Ono, Y. / Torimitsu, K. / Oyo Butsuri Gakkai et al. | 2006
- 914
-
Analysis of hole trapping into pentacene FET by Optical Second Harmonic Generation and C-V measurementsLim, E. / Manaka, T. / Tamura, R. / Iwamoto, M. / Oyo Butsuri Gakkai et al. | 2006
- 916
-
Combined Impact of Field and Carrier Concentration on Charge Carrier Mobilities in Amorphous Organic Thin FilmsMadigan, C. / Bulovic, V. / Oyo Butsuri Gakkai et al. | 2006
- 918
-
Electric field distribution in organic field effect transistor evaluated by microscopic second harmonic generationManaka, T. / Lim, E. / Tamura, R. / Yamada, D. / Iwamoto, M. / Oyo Butsuri Gakkai et al. | 2006
- 920
-
Organic Static Induction Transistors Based on Pentacene Thin Films with Various Source ElectrodesWatanabe, Y. / Iechi, H. / Kudo, K. / Oyo Butsuri Gakkai et al. | 2006
- 922
-
Investigation for hafnium oxide as an insulator layer of organic thin film transistorLin, C. W. / Lin, J. H. / Liu, K. C. / Oyo Butsuri Gakkai et al. | 2006
- 924
-
Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular OrderingPark, C. B. / Nishimura, T. / Yokoyama, T. / Kita, K. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 926
-
Development of a Printed Dielectric Layer for Organic Transistors (Invited)Kamata, T. / Uemura, S. / Yoshida, M. / Suemori, K. / Hoshino, S. / Takada, N. / Kozasa, T. / Oyo Butsuri Gakkai et al. | 2006
- 928
-
Low Hysteresis Organic Thin-Film Transistors and Inverters with Hybrid Gate DielectricPark, D. W. / Lee, C. A. / Jung, K. D. / Park, B. G. / Shin, H. / Lee, J. D. / Oyo Butsuri Gakkai et al. | 2006
- 930
-
Performance enhancement of Organic TFT by low-energy Ar ion beam treatment onto gate dielectric surfaceKang, S. / Park, J. / Jung, S. / Lee, H. J. / Yi, M. / Oyo Butsuri Gakkai et al. | 2006
- 932
-
Stable Polymer Dielectric Film for P3HT TFT by Modified Poly-(Vinyl Phenol) with Polar Functional GroupLo, P. Y. / Pei, Z. / Yang, F. Y. / Peng, Y. R. / Lin, Y. C. / Chan, Y. J. / Oyo Butsuri Gakkai et al. | 2006
- 934
-
Fabrication of Low-Voltage Pentacene Thin Film Transistors with Al~2O~3 gate dielectric grown by oxygen plasma processKim, K. D. / Song, C. K. / Oyo Butsuri Gakkai et al. | 2006
- 936
-
Threshold Voltage Control in Pentacene TFTs by Perfluoropentacene StackYokoyama, T. / Nishimura, T. / Kita, K. / Kyuno, K. / Toriumi, A. / Oyo Butsuri Gakkai et al. | 2006
- 938
-
Organic Field-Effect Transistor Integrated Circuits using Self-Alignment Process TechnologyOkada, H. / Nagai, T. / Kimura, T. / Naka, S. / Onnagawa, H. / Oyo Butsuri Gakkai et al. | 2006
- 940
-
Self-Aligned Fabrication Process of Organic Thin-Film-Transistors on the Flexible Substrate Using Photo-Sensitive Self-Assembled MonolayersArai, T. / Sato, N. / Yamaguchi, K. / Kawasaki, M. / Fujimori, M. / Shiba, T. / Ando, M. / Torii, K. / Oyo Butsuri Gakkai et al. | 2006
- 942
-
Hall effect of polycrystalline pentacene field-effect transistors on plastic filmsTakamatsu, Y. / Sekitani, T. / Nakano, S. / Sakurai, T. / Someya, T. / Oyo Butsuri Gakkai et al. | 2006
- 944
-
Logic circuits with pentacene and ZnO transistorsIechi, H. / Watanabe, Y. / Kudo, K. / Oyo Butsuri Gakkai et al. | 2006
- 946
-
Enhancement Mode GaAs n-MOSFET with High-k DielectricYakimov, M. / Tokranov, V. / Kambhampati, R. / Koveshnikov, S. / Tsai, W. / Zhu, F. / Lee, J. / Oktyabrsky, S. / Oyo Butsuri Gakkai et al. | 2006
- 948
-
Investigation of GaAs MOSFETs with Gate Oxide Grown Using Photoelectrochemical Oxidation MethodLee, H. Y. / Lin, Y. F. / Wang, M. Y. / Lee, C. T. / Oyo Butsuri Gakkai et al. | 2006
- 950
-
Passivation Effects of 100 nm In~0~.~4AlAs/In~0~.~3~5GaAs Metamorphic HEMT With Remote PECVD Grown Si~3N~4 LayerKim, S. / Jang, K. / Lee, J. / Her, J. / Seo, K. / Oyo Butsuri Gakkai et al. | 2006
- 952
-
Microwave Performance of Pseudomorphic HEMT with Tunable Field-Plate VoltageChiu, H. C. / Chien, F. T. / Oyo Butsuri Gakkai et al. | 2006
- 954
-
80nm T-Shaped Gate Metamorphic HEMTs fabricated Using Two-Step Gate Recess ProcessYoon, H. S. / Shim, J. Y. / Kang, D. M. / Hong, J. Y. / Lee, K. H. / Oyo Butsuri Gakkai et al. | 2006
- 956
-
Comparative Study of DC and Microwave Characteristics of 0.12 mum T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography ProcessLim, J. W. / Yoon, S. W. / Ahn, H. K. / Ji, H. G. / Chang, W. J. / Mun, J. K. / Kim, H. / Oyo Butsuri Gakkai et al. | 2006
- 958
-
Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs (Invited)Adesida, I. / Mohammed, F. M. / Wang, L. / Basu, A. / Kumar, V. / Oyo Butsuri Gakkai et al. | 2006
- 960
-
High-temperature and UV-assisted C-V characterization of GaN MIS structuresKato, H. / Miczek, M. / Hashizume, T. / Oyo Butsuri Gakkai et al. | 2006
- 962
-
Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AIGaN/GaN HEMTsWang, R. / Cai, Y. / Tang, W. C. W. / Lau, K. M. / Chen, K. J. / Oyo Butsuri Gakkai et al. | 2006
- 964
-
Phosphorus Implantation Effects in Mg Doped GaN EpilayersLiu, K. T. / Su, Y. K. / Chang, S. J. / Horikoshi, Y. / Oyo Butsuri Gakkai et al. | 2006
- 966
-
ICP Reactive Ion Etching with SiCl~4 Gas for Recessed Gate AlGaN/GaN HFETMatsuura, K. / Kikuta, D. / Ao, J. P. / Ogiya, H. / Hiramoto, M. / Kawai, H. / Ohno, Y. / Oyo Butsuri Gakkai et al. | 2006
- 968
-
SiO~2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility TransistorsHa, M. W. / Lim, J. / Choi, Y. H. / Her, J. C. / Seo, K. S. / Han, M. K. / Oyo Butsuri Gakkai et al. | 2006
- 970
-
Recent Advances on GaN Power Devices (Invited)Kachi, T. / Oyo Butsuri Gakkai et al. | 2006
- 972
-
Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction StructuresNakazawa, K. / Ueno, H. / Matsuo, H. / Yanagihara, M. / Uemoto, Y. / Ueda, T. / Tanaka, T. / Oyo Butsuri Gakkai et al. | 2006
- 974
-
High Critical Electric Field Exceeding 8 MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC SubstrateNishikawa, A. / Kumakura, K. / Makimoto, T. / Oyo Butsuri Gakkai et al. | 2006
- 976
-
High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO~2/Si~3N~4 Gate InsulatorYagi, S. / Shimizu, M. / Inada, M. / Okumura, H. / Ohashi, H. / Yano, Y. / Akutsu, N. / Oyo Butsuri Gakkai et al. | 2006
- 978
-
Pnp AlGaN/InGaN/ GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (<100Omega/sq)Kumakura, K. / Makimoto, T. / Oyo Butsuri Gakkai et al. | 2006
- 980
-
A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTsChoi, Y. H. / Ha, M. W. / Lim, J. / Han, M. K. / Oyo Butsuri Gakkai et al. | 2006
- 982
-
The incorporation effect of thin Al~2O~3 layers on ZrO~2-Al~2O~3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devicesJoo, M. S. / Lee, S. R. / Yang, H. / Hong, K. / Jang, S. A. / Koo, J. / Kim, J. / Shin, S. / Kim, M. / Pyi, S. et al. | 2006
- 984
-
High-k HfO~2/Al~2O~3 nanolaminated charge trapping layers for high performance flash memory device applicationsMaikap, S. / Tzeng, P. J. / Wang, T. Y. / Lin, C. H. / Lee, H. Y. / Wang, C. C. / Lee, L. S. / Yang, J. R. / Tsai, M. J. / Oyo Butsuri Gakkai et al. | 2006
- 986
-
P-SONOS and N-SONOS Transient Current and Field Modeling for Program and EraseDu, P. Y. / Guo, J. C. / Oyo Butsuri Gakkai et al. | 2006
- 988
-
Lateral Redistribution and Interactive Impacts of Localized Trapped Charges during Retention Baking in SONOS MemoryPang, H. / Pan, L. / Sun, L. / Wu, D. / Zhu, J. / Oyo Butsuri Gakkai et al. | 2006
- 990
-
Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash MemoriesKwon, W. H. / Jee, J. G. / Han, J. H. / Han, J. I. / Lee, H. K. / Lee, B. Y. / Sim, S. P. / Park, C. K. / Kim, K. N. / Oyo Butsuri Gakkai et al. | 2006
- 992
-
Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Yoke Wiring TechnologyKajiyama, T. / Miura, S. / Asao, Y. / Ueda, T. / Aikawa, H. / Iwayama, M. / Hosotani, K. / Amano, M. / Yoshikawa, M. / Tsuchida, K. et al. | 2006
- 994
-
New Magnetic Nano-Dots Memory with FePt Nano-DotsYin, C. K. / Bea, J. C. / Murugesan, M. / Oogane, M. / Fukushima, T. / Tanaka, T. / Natori, K. / Miyao, M. / Koyanagi, M. / Oyo Butsuri Gakkai et al. | 2006
- 996
-
Optimization of Ring Type Electrode Process for High Density PRAMRyoo, K. C. / Song, Y. J. / Kang, D. H. / Jeong, C. W. / Kong, J. H. / Oh, J. H. / Lim, D. W. / Park, S. S. / Kim, J. I. / Kim, J. H. et al. | 2006
- 998
-
Characteristics Improvement of Phase Change Memory with Programming Pulse WidthChao, D. S. / Lee, C. M. / Chen, Y. C. / Yen, P. H. / Wang, D. Y. / Chen, M. J. / Lo, S. C. / Hsu, H. H. / Wang, W. H. / Chen, F. et al. | 2006
- 1000
-
Thickness Dependent Nano-Crystallization in Ge~2Sb~2Te~5 films and Its Effect on DevicesWei, X. / Shi, L. / Chong, C. T. / Oyo Butsuri Gakkai et al. | 2006
- 1002
-
Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO~2/TaN gate on Strained Si-SiGe channelLoh, W. Y. / Chen, Y. / Lee, S. J. / Bera, L. K. / Yang, R. / Lo, G. Q. / Kwong, D. L. / Oyo Butsuri Gakkai et al. | 2006
- 1004
-
Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain StructuresOno, M. / Koyama, M. / Nishiyama, A. / Oyo Butsuri Gakkai et al. | 2006
- 1006
-
Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs; Short Channel Effects, Carrier Velocity and Parasitic ResistanceNishi, Y. / Kinoshita, A. / Koga, J. / Oyo Butsuri Gakkai et al. | 2006