Chemical Compatibility and Vapor Phase Stability Considerations for ALD Processes Utilizing Hafnium, Titanium, and Silicon Amide Precursors (English)
- New search for: Meiere, S. H.
- New search for: Peck, J.
- New search for: Litwin, M.
- New search for: Electrochemical Society
- New search for: Meiere, S. H.
- New search for: Peck, J.
- New search for: Litwin, M.
- New search for: Londergan, A. R.
- New search for: Electrochemical Society
In:
Atomic layer deposition applications: challenges and opportunities (Symposium)
10
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103-112
;
2006
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ISBN:
- Conference paper / Print
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Title:Chemical Compatibility and Vapor Phase Stability Considerations for ALD Processes Utilizing Hafnium, Titanium, and Silicon Amide Precursors
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Contributors:Meiere, S. H. ( author ) / Peck, J. ( author ) / Litwin, M. ( author ) / Londergan, A. R. / Electrochemical Society
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Conference:Symposium, Atomic layer deposition applications: challenges and opportunities (Symposium) ; 2005 ; Los Angeles, Calif
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Published in:ECS TRANSACTIONS ; 1, 10 ; 103-112
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Publisher:
- New search for: Electrochemical Society,
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Place of publication:Pennington, N.J.:
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Publication date:2006-01-01
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Size:10 pages
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Remarks:Held as part of the 208th ECS meeting
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Implementation of Atomic Layer Deposition in Advanced Semiconductor ProcessesSchaekers, M. / Van Ammel, A. / Travaly, Y. / Delabie, A. / Hoyas, A. M. / Zhao, C. / Electrochemical Society et al. | 2006
- 15
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Atomic Layer Deposited HfO~2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH StabilityKirsch, P. / Quevedo-Lopez, M. / Krishnan, S. / Song, S. / Choi, R. / Majhi, P. / Senzaki, Y. / Bersuker, G. / Lee, B. / Electrochemical Society et al. | 2006
- 29
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ALD: Emerging Materials, Processes, and Nanoscale Technology ApplicationsEisenbraun, E. / Carpenter, M. / Siddique, R. / Naczas, S. / Zeng, W. / Luo, F. / Kaloyeros, A. / Electrochemical Society et al. | 2006
- 37
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ALD for Data Storage ApplicationsMao, M. / Bubber, R. / Schneider, T. / Electrochemical Society et al. | 2006
- 51
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Metal-Organic Atomic Layer Deposition of Metals for Applications in Interconnect Technologyvan der Straten, O. / Rossnagel, S. / Doyle, J. / Rodbell, K. / Electrochemical Society et al. | 2006
- 57
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Iridium Barriers for Direct Copper Electrodeposition in Damascene ProcessingJosell, D. / Bonevich, J. / Moffat, T. / Aaltonen, T. / Ritala, M. / Leskela, M. / Electrochemical Society et al. | 2006
- 63
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Platinum Liner Deposited by Atomic Layer Deposition for Cu Interconnect ApplicationZhu, Y. / Dunn, K. / Kaloyeros, A. / Electrochemical Society et al. | 2006
- 71
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LEIS Study of ALD WN~xC~y Growth on Dielectric LayersStokhof, M. / Sprey, H. / Li, W. / Haukka, S. / de, M. R. / Brongersma, H. / Electrochemical Society et al. | 2006
- 79
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Low-k SiBN (Silicon Boron Nitride) Film Synthesized by a Plasma-Assisted Atomic Layer DepositionYang, S. / Kim, J. / Noh, J. / Kim, H. / Lee, S. / Ahn, J. / Hwang, K. / Shin, Y. / Chung, U. / Moon, J. et al. | 2006
- 95
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ALD Precursor Development: Challenges, Opportunities and Managing UncertaintyHoover, C. A. / Electrochemical Society et al. | 2006
- 103
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Chemical Compatibility and Vapor Phase Stability Considerations for ALD Processes Utilizing Hafnium, Titanium, and Silicon Amide PrecursorsMeiere, S. H. / Peck, J. / Litwin, M. / Electrochemical Society et al. | 2006
- 113
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Modeling and engineering of hafnium silicate (HfSiO) gate dielectric deposited by nano-laminated atomic layer deposition (NL-ALD)Chang, Vincent S. / Hou, Y.T. / Hsu, P.F. / Lim, P.S. / Yao, L.G. / Yen, F.Y. / Hung, C.L. / Jiang, J.C. / Lin, H.J. / Jin, Y. et al. | 2006
- 113
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Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)Chang, V. S. / Hou, Y. / Hsu, P. / Lim, P. / Yao, L. / Yen, F. / Hung, C. / Lin, H. / Jiang, J. / Jin, Y. et al. | 2006
- 125
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Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer DepositionPark, S. K. / Kwack, H. / Lee, J. / Hwang, C. / Chu, H. / Electrochemical Society et al. | 2006
- 131
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Atomic Layer Deposition of NbN and Nb(Si)N for Metal ElectrodesHuotari, H. / Haukka, S. / Matero, R. / Rahtu, A. / Tois, E. / Tuominen, M. / Electrochemical Society et al. | 2006
- 137
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Scale-up of the barium titanate atomic layer deposition process onto 200 mm waferMatero, R. / Rahtu, A. / Haukka, S. / Tuominen, M. / Vehkamäki, M. / Hatanpaä, T. / Ritala, M. / Leskela, M. et al. | 2006
- 137
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Scale-up of the BaTiO~3 ALD Process onto 200 mm WaferMatero, R. / Rahtu, A. / Haukka, S. / Tuominen, M. / Vehkamaki, M. / Hatanpaa, T. / Ritala, M. / Leskela, M. / Electrochemical Society et al. | 2006