EVALUATION OF THE DEGREE OF DAMAGE AFTER DIFFERENT CONDICTIONS OF He/H~2 STRIP PLASMA ON SILICA-BASED POROUS LOW-k MATERIALS - COMPATIBILITY STUDY WITH CHEMICAL SOLUTIONS (English)
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In:
Cleaning technology in semiconductor device manufacturing
3
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319-326
;
2006
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ISBN:
- Conference paper / Print
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Title:EVALUATION OF THE DEGREE OF DAMAGE AFTER DIFFERENT CONDICTIONS OF He/H~2 STRIP PLASMA ON SILICA-BASED POROUS LOW-k MATERIALS - COMPATIBILITY STUDY WITH CHEMICAL SOLUTIONS
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Contributors:Kesters, E. ( author ) / Le, Q. T. ( author ) / Boullart, W. ( author ) / Han, Q. ( author ) / Berry, I. ( author ) / Waldfried, C. ( author ) / Mertens, P. W. ( author ) / Heyns, M. M. ( author ) / Ruzyllo, J. / Hattori, T.
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Conference:INTERNATIONAL SYMPOSIUM; 9th, Cleaning technology in semiconductor device manufacturing ; 2005 ; Los Angeles, CA
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Published in:ECS TRANSACTIONS ; 1, 3 ; 319-326
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, N.J.
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Publication date:2006-01-01
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Size:8 pages
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Remarks:Includes bibliographical references and indexes
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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MANAGEMENT OF METALLIC CONTAMINATION IN ADVANCED IC MANUFACTURINGDanel, A. / Renaud, D. / Besson, P. / Bigot, C. / Grouillet, A. / Joly, J. P. / Claes, M. / Bearda, T. / Frickinger, J. / Electrochemical Society et al. | 2006
- 11
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A NEW SEMICONDUCTOR CLEANING METHOD BY THE USE OF DEFECT PASSIVATION ETCHLESS CLEANINGTakahashi, M. / Liu, I.-L. / Narita, H. / Kobayashi, H. / Electrochemical Society et al. | 2006
- 19
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THE EFFECT OF FILTER MATERIAL CLEANLINESS ON WAFER SURFACE METALS CONTAMINATIONRoche, T. S. / Gutowski, T. B. / Electrochemical Society et al. | 2006
- 26
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NANOSCALE PARTICLES REMOVAL ON AN EXTREME ULTRA-VIOLET LITHOGRAPHY (EUVL) MASK LAYER BY LASERSHOCK CLEANINGLee, S.-H. / Park, J.-G. / Busnaina, A. A. / Lee, J.-M. / Kim, T.-H. / Zhang, G. / Eschbach, F. / Ramamoorthy, A. / Electrochemical Society et al. | 2006
- 33
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LASER CLEANING OF NANO- TO MICROCONTAMINANTS FROM CRITICAL SILICON SURFACESKudryashov, S. I. / Shukla, S. / Allen, S. D. / Electrochemical Society et al. | 2006
- 43
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SURFACE PREPARATION ISSUES ASSOCIATED WITH HIGH-k/METAL GATE DEVICESBarnett, J. / Moumen, N. / Peterson, J. J. / Kirsch, P. / Neugroschel, A. / Bersuker, G. / Huff, H. R. / Electrochemical Society et al. | 2006
- 51
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SUPRESSION OF SURFACE MICRO-ROUGHNESS OF SILICON WAFER BY ADDITION OF ALCOHOL INTO ULTRA PURE WATER FOR RINSING PROCESSYamamoto, M. / Nii, K. / Morinaga, H. / Teramoto, A. / Ohmi, T. / Electrochemical Society et al. | 2006
- 59
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CLEANING OF CROSS-CONTAMINATION OF HIGH-k DILECTRICS IN PLASMA ETCH TOOLPandit, V. / Parks, H. G. / Vermeire, B. / Raghavan, S. / Electrochemical Society et al. | 2006
- 67
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SELECTIVE REMOVAL OF Ni FOR SALICIDATION AND FULLY SILICIDED GATESKraus, K. / Leston, V. F. / Snow, J. / Xu, K. / de Potter de ten Broeck, M. / Lauwers, A. / Mertens, P. W. / Kovacs, F. / Electrochemical Society et al. | 2006
- 75
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THE EFFECT OF OXYGEN CONCENTRATION IN CLEANING PROCESS ON SILICON SURFACEMizutani, N. / Morinaga, H. / Teramoto, A. / Ohmi, T. / Electrochemical Society et al. | 2006
- 82
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POLY SIDEWALL CHEMICAL OXIDATION TECHNIQUEMitra, R. / Electrochemical Society et al. | 2006
- 89
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IMPROVEMENT OF YIELD AND QUALITY OF EPITAXIAL WAFERS IN MASS PRODUCTIONBigot, C. / Nguyen, M. C. / Danel, A. / Electrochemical Society et al. | 2006
- 97
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DEGRADATION OF CHELATING AGENTS IN HYDROGEN PEROXIDE AND APM+ SOLUTIONSDoll, O. / Metzger, S. / Kolbesen, B. O. / Electrochemical Society et al. | 2006
- 105
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EFFECT OF SILICON SURFACE CONDITION ON FILM FORMATION USING MIST DEPOSITIONShanmugasundaram, K. / Chang, K. / Ruzyllo, J. / Electrochemical Society et al. | 2006
- 111
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HIGH DOSE IMPLANT STRIP IN FEOL IC MANUFACTURING USING A COMBINATION OF CRYOGENIC AND WET CLEANING TECHNIQUESBanerjee, S. / Borade, R. / Sato, M. / Hirate, S. / Cross, P. / Raghavan, S. / Electrochemical Society et al. | 2006
- 119
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DEVELOPMENT OF HIGH SELECTIVITY POLY-Si STRIP PROCESS BY USING REMOTE PLASMAHan, J. / Shim, W. / Choi, S. / Hong, C. / Cho, H. / Moon, J. / Electrochemical Society et al. | 2006
- 127
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AN INVESTIGATION OF THE CRITICAL PARAMETERS OF AN ATOMIZED, ACCELERATED LIQUID SPRAY TO REMOVE PARTICLESVerhaverbeke, S. / Gouk, R. / Porras, E. / Ko, A. / Endo, R. / Brown, B. / Lee, J. T.C. / Electrochemical Society et al. | 2006
- 134
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SINGLE - WAFER WET CLEANING FOR A HIGH PARTICLE REMOVAL EFFICIENCY ON HYDROPHOBIC SURFACESano, K. / Izumi, A. / Eitoku, A. / Snow, J. / Kesters, E. / Mertens, P. / Electrochemical Society et al. | 2006
- 142
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A DAMAGE-FREE ULTRA-DILUTED HF/N~2 JET SPRAY FOR PARTICLE REMOVAL WITH MINIMAL SILICON AND OXIDE LOSSHirano, H. / Sato, K. / Osaka, T. / Kuniyasu, H. / Hattori, T. / Electrochemical Society et al. | 2006
- 150
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SINGLE-WAFER TOOL PERFORMS RE-CONTAMINATION FREE IN WET WAFER CLEANINGLiu, L. / Walter, A. / Novak, R. / Electrochemical Society et al. | 2006
- 158
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KEYS TO ADVANCED SINGLE WAFER CLEANING - GAS CONTEND, BUBBLE SIZE DISTRIBUTION AND CHEMISTRYLippert, A. / Engesser, P. / Gleissner, A. / Koffler, M. / Kumnig, F. / Obweger, R. / Pfeuffer, A. / Rogatschnig, R. / Okorn-Schmidt, H. / Electrochemical Society et al. | 2006
- 164
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EFFICIENT CLEANING OF LOW-k MATERIALS USING SINGLE-WAFER CLEANING SOLUTION: A COMPATIBILITY STUDY AND ELECTRICAL CHARACTERIZATIONLe, Q. T. / Van Olmen, J. / Vanderheyden, R. / Kesters, E. / Kenis, K. / Conard, T. / Boullart, W. / Baklanov, M. R. / Vanhaelemeersch, S. / Electrochemical Society et al. | 2006
- 172
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MEETING THE CRITICAL CLEANING CHALLENGES FOR 65 nm AND BEYOND USING A SINGLE WAFER PROCESSING WITH NOVEL MEGASONICS AND DRYING TECHNOLOGIESPark, I. S. / Choi, S. J. / Hong, C. K. / Cho, H. K. / Lu, Y. Q. / Baiya, E. / Rosato, J. J. / Yalamanchili, M. R. / Hansen, E. / Electrochemical Society et al. | 2006
- 180
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BENEFITS OF SINGLE WAFER POLYMER REMOVAL WITH INORGANIC CHEMICALS ON FEOL AND BEOL STRUCTURES OF DRAMSHaigermoser, C. / Henry, S. A. / Rho, E.-S. / Song, J. / Kim, H. / Electrochemical Society et al. | 2006
- 187
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AIR FLOW IN A SQUARE QUARTZ PLATE SPIN CLEANERHabuka, H. / Pan, H. / Fujita, K. / Kato, M. / Takeuchi, T. / Aihara, M. / Electrochemical Society et al. | 2006
- 194
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IMPROVED DEFECTIVITY FOR BEOL CLEANS USING SINGLE WAFER MEGASONICSLee, L. Y. / Thanigaivelan, T. / So, J. / Frasier, B. / Kashkoush, I. / Electrochemical Society et al. | 2006
- 201
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A STUDY ON SELECTIVE SiGe ETCH FOR THREE-DIMENSIONAL Si STRUCTURE APPLICATIONSLee, H. / Han, J. / Shim, W. / Hong, C. / Cho, H. / Moon, J. / Electrochemical Society et al. | 2006
- 207
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SELECTIVE ETCHING OF SiGe FOR REMOVAL OF DUMMY LAYERS IN FULLY SILICIDED GATE ARCHITECTURESSnow, J. / Vos, R. / Anil, K. G. / Kraus, H. / Xu, K. / Grinninger, F. / Wagner, G. / Kovacs, F. / Mertens, P. W. / Electrochemical Society et al. | 2006
- 214
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STUDY OF GERMANIUM SURFACE IN WET CHEMICAL SOLUTIONS FOR SURFACE CLEANING APPLICATIONSKim, J. / Saraswat, K. / Nishi, Y. / Electrochemical Society et al. | 2006
- 220
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METAL DEPOSITION ON Ge SURFACESSioncke, S. / Onsia, B. / Struys, K. / Rip, J. / Vos, R. / Meuris, M. / Mertens, P. / Theuwis, A. / Electrochemical Society et al. | 2006
- 228
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SURFACE ROUGHNESS IN SILICON CARBIDE TECHNOLOGYChang, K. / Witt, T. / Hoff, A. / Woodin, R. / Ridley, R. / Dolny, G. / Shanmugasundaram, K. / Oborina, E. / Ruzyllo, J. / Electrochemical Society et al. | 2006
- 234
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WAFER SURFACE CONTAMINATION REDUCTION FROM SILICON CARBIDE COMPONENTS AT ELEVATED TEMPERATURESRapoport, I. / Taylor, P. / Kim, S.-B. / Orschel, B. / Kearns, J. / Narendar, Y. / Electrochemical Society et al. | 2006
- 245
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REAL-TIME CHEMICAL MONITORING BY NIR SPECTROSCOPYBratin, P. / Shalyt, E. / Berkmans, J. / Hartman, I. / Shekel, Y. / Electrochemical Society et al. | 2006
- 251
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DETECTION AND MAPPING OF LOW LEVELS OF CONTAMINANTS ON Si WAFERS USING THE SCANNING CPDI TECHNIQUEYang, C. / Hawthorne, J. / Steele, B. / Deltoro, G. / Electrochemical Society et al. | 2006
- 259
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THE CHARACTERIZATION OF 65 nm PARTICLES ON POLISHED SILICON WAFERSBae, K.-M. / Kim, T.-W. / Lee, J.-P. / Binns, J. / Electrochemical Society et al. | 2006
- 267
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PARTICLE-SUBSTRATE INTERACTIONS IN NON-AQUEOUS MEDIA STUDIED BY COLLOIDAL PROBE AFMBarbagini, F. / Fyen, W. / Van Hoeymissen, J. / Mertens, P. / Fransaer, J. / Electrochemical Society et al. | 2006
- 277
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ION-IMPLANTED RESIST STRIPPING USING SUPERCRITICAL CARBON DIOXIDESaga, K. / Kuniyasu, H. / Hattori, T. / Korzenski, M. B. / Visintin, P. M. / Baum, T. H. / Electrochemical Society et al. | 2006
- 285
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CHEMICAL FORMULATIONS FOR STRIPPING POST-ETCH PHOTORESIST ON A LOW-k FILM IN SUPERCRITICAL CARBON DIOXIDEKorzenski, M. B. / Baum, T. H. / Saga, K. / Kuniyasu, H. / Hattori, T. / Electrochemical Society et al. | 2006
- 293
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REPAIR OF POROUS METHYL-SUBSTITUTED SILICON DIOXIDE FILMS USING SUPERCRITICAL CO~2Xie, B. / Muscat, A. J. / Electrochemical Society et al. | 2006
- 301
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SUPERCRITICAL CO~2 LOW-k DIELECTRIC REPAIRMalhouitre, S. / Van Hoeymissen, J. / Muscat, A. / Granger, P. / Mertens, P. / Electrochemical Society et al. | 2006
- 309
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INTERFACIAL LAYER FORMATION ON SILICON BY HALOGEN ACTIVATIONThorsness, A. G. / Muscat, A. J. / Electrochemical Society et al. | 2006
- 319
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EVALUATION OF THE DEGREE OF DAMAGE AFTER DIFFERENT CONDICTIONS OF He/H~2 STRIP PLASMA ON SILICA-BASED POROUS LOW-k MATERIALS - COMPATIBILITY STUDY WITH CHEMICAL SOLUTIONSKesters, E. / Le, Q. T. / Boullart, W. / Han, Q. / Berry, I. / Waldfried, C. / Mertens, P. W. / Heyns, M. M. / Electrochemical Society et al. | 2006
- 327
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A NOVEL SURFACE CLEANING FOR COPPER INTERCONNECTION USING ATOMIC HYDROGENIzumi, A. / Ueno, T. / Tsukinari, A. / Takada, A. / Electrochemical Society et al. | 2006
- 333
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THE EFFECTS OF pH ADJUSTORS IN POST Cu CMP CLEANING SOLUTIONS ON PARTICLE ADHESION AND REMOVALHong, Y.-K. / Song, J.-H. / Kang, Y.-J. / Kim, I.-K. / Park, J.-G. / Song, H.-S. / Kim, K.-S. / Myung, J.-J. / Lee, H.-J. / Song, S.-Y. et al. | 2006
- 341
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EFFECT OF CORROSION INHIBITOR, 1H-BENZOTRIAZOLE (BTAH) ON PARTICLE ADHESION IN Cu CMPSong, J.-H. / Hong, Y.-K. / Kim, T.-G. / Kang, Y.-J. / Kim, I.-K. / Han, J.-H. / Park, J.-G. / Busnaina, A. A. / Electrochemical Society et al. | 2006
- 349
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A NEW FAILURE MECHANISM BY TUNGSTEN BRIDGING IN A PLUG PROCESS DUE TO INCOMPLETE POST-METAL ETCH RESIDUE CLEAN CAUSING CORROSION AND TUNGSTEN RE-DEPOSITIONFlorence, D. / Williams, B. / Belisle, C. / Prasad, J. / Electrochemical Society et al. | 2006
- 357
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INVESTIGATION OF THE IMPACT OF BARRIER SLURRY PROPERTIES ON POST-CMP CLEANING EFFICIENCYPeters, D. / Bartosh, K. / Tran, C. / Watts, C. / Electrochemical Society et al. | 2006
- 365
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STUDY OF THE KINETICS OF THE COPPER CLEANING BY X-RAY REFLECTOMETRYRebiscoul, D. / Broussous, L. / Louis, D. / Passemard, G. / Electrochemical Society et al. | 2006