Molecular Beam Epitaxy of AlN Layers on Si (111) (English)
- New search for: Moreno, J.-C.
- New search for: Frayssinet, E.
- New search for: Semond, F.
- New search for: Massies, J.
- New search for: Materials Research Society
- New search for: Moreno, J.-C.
- New search for: Frayssinet, E.
- New search for: Semond, F.
- New search for: Massies, J.
- New search for: Li, T.
- New search for: Materials Research Society
In:
Advances in GaN, GaAs, SiC and related alloys on silicon substrates
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141-146
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2008
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ISBN:
- Conference paper / Print
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Title:Molecular Beam Epitaxy of AlN Layers on Si (111)
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Contributors:Moreno, J.-C. ( author ) / Frayssinet, E. ( author ) / Semond, F. ( author ) / Massies, J. ( author ) / Li, T. / Materials Research Society
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Conference:Symposium, Advances in GaN, GaAs, SiC and related alloys on silicon substrates ; 2008 ; San Francisco, CA
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Published in:MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 1068 ; 141-146
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Publisher:
- New search for: Materials Research Society
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Place of publication:Warrendale , Pa.
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Publication date:2008-01-01
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Size:6 pages
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Remarks:Includes bibliographical references and indexes
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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GaN-on-Si HEMTs: From Device Technology to Product InsertionJohnson, W. / Singhal, S. / Hanson, A. / Therrien, R. / Chaudhari, A. / Nagy, W. / Rajagopal, P. / Martin, Q. / Nichols, T. / Edwards, A. et al. | 2008
- 13
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GaN Electrochemical Probes and MEMS on SiHeinle, U. / Benkart, P. / Daumiller, I. / Kunze, M. / Sonmez, E. / Materials Research Society et al. | 2008
- 21
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An Analytical Compact Direct-Current and Capacitance Model for AlGaN/GaN High Electron Mobility TransistorsLi, M. / Cheng, X. / Wang, Y. / Materials Research Society et al. | 2008
- 27
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Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-Effect MobilityKambayashi, H. / Niiyama, Y. / Ootomo, S. / Nomura, T. / Iwami, M. / Satoh, Y. / Kato, S. / Yoshida, S. / Materials Research Society et al. | 2008
- 33
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Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion ImplantationNomoto, K. / Ohsawa, T. / Satoh, M. / Nakamura, T. / Materials Research Society et al. | 2008
- 39
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Power Performance of AlGaN/GaN HEMT's Grown on 6'' Si SubstratesDerluyn, J. / Das, J. / Cheng, K. / Lorenz, A. / Visalli, D. / Degroote, S. / Germain, M. / Borghs, S. / Materials Research Society et al. | 2008
- 45
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MOVPE Growth and Characterization of AIInN FET Structures on Si(111)Hums, C. / Gadanecz, A. / Dadgar, A. / Blasing, J. / Witte, H. / Hempel, T. / Dietz, A. / Lorenz, P. / Krischok, S. / Schaefer, J.A. et al. | 2008
- 51
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Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBESemond, F. / Cordier, Y. / Natali, F. / Le Louarn, A. / Vezian, S. / Joblot, S. / Chenot, S. / Baron, N. / Frayssinet, E. / Moreno, J.-C. et al. | 2008
- 57
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Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) SubstratesCordier, Y. / Portail, M. / Chenot, S. / Tottereau, O. / Zielinski, M. / Chassagne, T. / Materials Research Society et al. | 2008
- 63
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Epitaxial Growth of High- kappa Dielectrics for GaN MOSFETsJur, J.S. / Wheeler, G.D. / Veety, M.T. / Lichtenwalner, D.J. / Barlage, D.W. / Johnson, M.A.L. / Materials Research Society et al. | 2008
- 71
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Integrated Optics Utilizing GaN-Based Layers on Silicon SubstratesRosenberg, A. / Mastro, M.A. / Caldwell, J.D. / Holm, R.T. / Henry, R.L. / Eddy, C.R. / Bussmann, K. / Kim, M. / Materials Research Society et al. | 2008
- 83
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Effect of Si and Er Co-Doping on Green Electroluminescence From GaN:Er ELDsWang, R. / Steckl, A.J. / Materials Research Society et al. | 2008
- 89
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MOVPE of m-plane InGaN/GaN Buffer and LED Structures on gamma -LiAlO~2Behmenburg, H. / Mauder, C. / Khoshroo, L.R. / Wen, T.C. / Dikme, Y. / Rzheutskii, M.V. / Lutsenko, E.V. / Yablonskii, G.P. / Chou, M.M.C. / Woitok, J. et al. | 2008
- 95
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Strong Light-Matter Coupling in GaN-Based Microcavities Grown on Silicon SubstratesSemond, F. / Sellers, I.R. / Ollier, N. / Natali, F. / Byrne, D. / Reveret, F. / Stokker-Cheregi, F. / Bejtka, K. / Gurioli, M. / Vinattieri, A. et al. | 2008
- 101
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AlGaN/GaN Multiple Quantum Wells Grown by Using Atomic Layer Deposition TechniqueLo, M.-H. / Li, Z.-Y. / Chen, S.-W. / Hong, J.-C. / Lu, T.-C. / Kuo, H.-C. / Wang, S.-C. / Materials Research Society et al. | 2008
- 107
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High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam EpitaxyVajpeyi, A.P. / Tsiakatouras, G. / Adikimenakis, A. / Tsagaraki, K. / Androulidaki, M. / Georgakilas, A. / Materials Research Society et al. | 2008
- 117
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Effect of Graded Al~xGa~1~-~xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD MethodLin, K. / Chang, E.-Y. / Li, T. / Huang, W.-C. / Hsiao, Y.-L. / Tweet, D. / Maa, J.-s. / Hsu, S.-T. / Materials Research Society et al. | 2008
- 123
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Growth Optimization for High Quality GaN Films Grown by Metal-Organic Chemical Vapor DepositionJang, J.H. / Herrero, A.M. / Son, S. / Gila, B. / Abernathy, C. / Craciun, V. / Materials Research Society et al. | 2008
- 129
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Investigation of Blistering Phenomena in Hydrogen-Implanted GaN and AlN for Thin-Film Layer Transfer ApplicationsSingh, R. / Scholz, R. / Christiansen, S.H. / Goesele, U. / Materials Research Society et al. | 2008
- 135
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Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer LayerWong, Y.-Y. / Chang, E.Y. / Yang, T.-H. / Chang, J.-R. / Chen, Y.-C. / Ku, J.-T. / Materials Research Society et al. | 2008
- 141
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Molecular Beam Epitaxy of AlN Layers on Si (111)Moreno, J.-C. / Frayssinet, E. / Semond, F. / Massies, J. / Materials Research Society et al. | 2008
- 147
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AlGaN Transition Layers on Si (111) Substrates-Observations of Microstructure and Impact on Material QualityRoberts, J.C. / Cook, J.W. / Rajagopal, P. / Piner, E.L. / Linthicum, K.J. / Materials Research Society et al. | 2008
- 153
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Effects of Stress-Relieving AlN Interlayers in GaN-on-Si Grown by Plasma-Assisted Molecular Beam EpitaxyAdikimenakis, A. / Sahonta, S.-L. / Dimitrakopulos, G. / Domagala, J. / Komninou, P. / Georgakilas, A. / Materials Research Society et al. | 2008
- 159
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InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon SubstratesReichertz, L.A. / Yu, K.M. / Cui, Y. / Hawkridge, M.E. / Beeman, J.W. / Liliental-Weber, Z. / Ager, J.W. / Walukiewicz, W. / Schaff, W.J. / Williamson, T.L. et al. | 2008
- 165
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InGaN Growth with Indium Content Controlled by GaN Growth PlaneKanie, H. / Akashi, K. / Materials Research Society et al. | 2008
- 171
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Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPEIto, T. / Terada, Y. / Egawa, T. / Materials Research Society et al. | 2008
- 177
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The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer LayerDumiszewska, E. / Strupinski, W. / Caban, P. / Wesolowski, M. / Lenkiewicz, D. / Jakiela, R. / Pagowska, K. / Turos, A. / Zdunek, K. / Materials Research Society et al. | 2008
- 185
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Formation of III-V Semiconductor Engineered Substrates Using Smart Cut™ Layer Transfer TechnologyLetertre, F. / Materials Research Society et al. | 2008
- 197
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Transistor Level Integration of Compound Semiconductor Devices and CMOS (CoSMOS)Elliott, K. / Patterson, P. / Li, J.C. / Royter, Y. / Hussain, T. / Materials Research Society et al. | 2008
- 203
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Direct Growth of III-V Devices on SiliconHerrick, K. / Kazior, T. / Liu, A. / Loubychev, D.I. / Fastenau, J.M. / Urteaga, M. / Fitzgerald, E.A. / Bulsara, M.T. / Clark, D. / Brar, B. et al. | 2008
- 209
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Epitaxial and Non-Epitaxial Heterogeneous Integration Technologies at NGSTGutierrez-Aitken, A. / Chang-Chien, P. / Oyama, B. / Tornquist, K. / Thai, K. / Scott, D. / Sandhu, R. / Zhou, J. / Nam, P. / Phan, W. et al. | 2008
- 217
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An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/Ge~xSi~1~-~x Metamorphic Buffer LayersChang, E.Y. / Lin, Y.-C. / Hsiao, Y.-L. / Hsieh, Y.C. / Chang, C.-Y. / Kuo, C.-I. / Luo, G.-L. / Materials Research Society et al. | 2008
- 223
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Epitaxial Growth of III-V Nanowires on Group IV SubstratesBakkers, E. / Borgstrom, M. / Verheijen, M. / Materials Research Society et al. | 2008
- 235
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Growth and Characterization of InSb Films on Si (001)Tran, L. / Dobbert, J. / Hatami, F. / Masselink, W.T. / Materials Research Society et al. | 2008
- 241
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A Study of Conformal GaAs on Si Layers by Micro-Raman and Spectral Imaging CathodoluminescenceMartinez, O. / Sanz, L.F. / Jimenez, J. / Gerard, B. / Gil-Lafon, E. / Materials Research Society et al. | 2008
- 247
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Epitaxial Growth of Single Crystalline Ge Films on GaAs Substrates for CMOS Device IntegrationChin, H.-C. / Zhu, M. / Samudra, G. / Yeo, Y.-C. / Materials Research Society et al. | 2008
- 255
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Nondestructive Defect Measurement and Surface Analysis of 3C-SiC on Si (001) by Electron Channeling Contrast ImagingPicard, Y.N. / Locke, C. / Frewin, C.L. / Myers-Ward, R.L. / Caldwell, J.D. / Hobart, K.D. / Twigg, M.E. / Saddow, S.E. / Materials Research Society et al. | 2008
- 261
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P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on SiBazin, A.-E. / Michaud, J.-F. / Portail, M. / Chassagne, T. / Zielinski, M. / Lecoq, J.-M. / Collard, E. / Alquier, D. / Materials Research Society et al. | 2008
- 267
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Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC SurfacesTwigg, M.E. / Picard, Y.N. / Caldwell, J.D. / Eddy, C.R. / Neudeck, P.G. / Trunek, A.J. / Powell, J.A. / Materials Research Society et al. | 2008
- 273
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A Comprehensive Study of Growth Techniques and Characterization of Epitaxial Ge~1~-~xC~x (111) Layers Grown Directly on Si (111) for MOS ApplicationsJamil, M. / Donnelly, J.P. / Lee, S.-H. / Shahrjerdi, D. / Akyol, T. / Tutuc, E. / Banerjee, S.K. / Materials Research Society et al. | 2008
- 279
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Condensation Mechanism for the Formation of Relaxed SiGe Layer Grown-on-InsulatorLee, H.-J. / Lee, G.-S. / Han, Y.-S. / Hong, S.-H. / Shim, T.-H. / Park, J.-G. / Materials Research Society et al. | 2008