HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle (English)
- New search for: Nyns, L.
- New search for: Delabie, A.
- New search for: Caymax, M.
- New search for: Heyns, M.
- New search for: Van Elshocht, S.
- New search for: Vinckier, C.
- New search for: De Gendt, S.
- New search for: Electrochemical Society
- New search for: Nyns, L.
- New search for: Delabie, A.
- New search for: Caymax, M.
- New search for: Heyns, M.
- New search for: Van Elshocht, S.
- New search for: Vinckier, C.
- New search for: De Gendt, S.
- New search for: Londergan, A.
- New search for: Electrochemical Society
In:
Atomic layer deposition applications
4
;
257-268
;
2008
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ISBN:
- Conference paper / Print
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Title:HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle
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Contributors:Nyns, L. ( author ) / Delabie, A. ( author ) / Caymax, M. ( author ) / Heyns, M. ( author ) / Van Elshocht, S. ( author ) / Vinckier, C. ( author ) / De Gendt, S. ( author ) / Londergan, A. / Electrochemical Society
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Conference:Symposium; 4th, Atomic layer deposition applications ; 2008 ; Honolulu, HI
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Published in:Atomic layer deposition applications , 4 ; 257-268ECS TRANSACTIONS ; 16, 4 ; 257-268
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, N.J.
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Publication date:2008-01-01
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Size:12 pages
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Remarks:Includes bibliographical references and index
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Deposition of Organic- Inorganic Hybrid Materials by Atomic Layer DepositionNilsen, O. / Klepper, K. / Nielsen, H. / Fjellvag, H. / Electrochemical Society et al. | 2008
- 15
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Opportunities of ALD for Thin Film Solid Oxide Fuel CellsPrinz, F. / Electrochemical Society et al. | 2008
- 19
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Leading Edge Atomic Layer Deposition ApplicationsSundaram, G. / Monsma, D. / Becker, J. / Electrochemical Society et al. | 2008
- 29
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Fabrication and Characterization of Lead Sulfide Thin Films by Atomic Layer DepositionDasgupta, N.P. / Walch, S.P. / Prinz, F. / Electrochemical Society et al. | 2008
- 39
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Comparison of Gate Sensitivity for Spin Interference Effect between Al~2O~3 and SiO~2 Gate Insulators on InGaAs Based Mesoscopic Ring ArraysKohda, M. / Takagi, J. / Nitta, J. / Electrochemical Society et al. | 2008
- 51
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Electrical Properties of High-k ALD HfO2 Deposited on Strained Si Layers Epitaxially Grown on Si0.8Ge0.2/Si SubstratesShrestha, P.R. / Gu, D. / Tapily, K. / Baumgart, H. / Electrochemical Society et al. | 2008
- 59
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Fabrication of Self-aligned Enhancement-mode n-channel GaAs MOSFETs Employing a Wet Clean Process for GaAs SubstratesShahrjerdi, D. / Garcia-Guteirrez, D. / Kim, S. / Hasan, M.M. / Varahramyan, K. / Tutuc, E. / Banerjee, S. / Electrochemical Society et al. | 2008
- 69
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Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-k Gate StacksToriumi, A. / Nabatame, T. / Ota, H. / Electrochemical Society et al. | 2008
- 79
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Design and Development of ALD Precursors for MicroelectronicsKanjolia, R.K. / Anthis, J. / Odedra, R. / Williams, P. / Heys, P.N. / Electrochemical Society et al. | 2008
- 87
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Novel Zirconium Precursors for Atomic Layer Deposition of ZrO2 filmsChen, T. / Cameron, T.M. / Nguyen, S.D. / Stauf, G.T. / Peters, D.W. / Maylott, L. / Li, W. / Xu, C. / Roeder, J.F. / Hendrix, B.C. et al. | 2008
- 103
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Development of ALD Precursors for Semiconductor DevicesWada, S. / Abe, T. / Sakurai, A. / Higashino, T. / Fujimoto, R. / Shimizu, M. / Electrochemical Society et al. | 2008
- 113
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Ti Source Precursors for Atomic Layer Deposition of TiO2, STO and BSTKatamreddy, R. / Omarjee, V. / Feist, B. / Dussarrat, C. / Electrochemical Society et al. | 2008
- 125
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Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics: Precursor delivery, Materials and ProcessesKarim, Z. / Senzaki, Y. / Ramanathan, S. / Lindner, J. / Silva, H. / Dauelsberg, M. / Electrochemical Society et al. | 2008
- 135
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Batch Atomic Layer Deposition of HfO2 and ZrO2 Films Using Cyclopentadienyl PrecursorsFischer, P.R. / Pierreux, D. / Rouault, O. / Sirugue, J. / Zagwijn, P.M. / Tois, E. / Haukka, S. / Electrochemical Society et al. | 2008
- 151
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Atomic Layer Deposition as a Synthesis Method for Inorganic MembranesCassidy, D. / Higgins, S. / McCool, B.A. / DeSisto, W.J. / Electrochemical Society et al. | 2008
- 151
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Atomic layer deposition as a tool to modify mesoporous silica membranesCassidy, D. / Higgins, S. / McCool, B.A. / DeSisto, W.J. et al. | 2008
- 159
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Synthesis of zirconia and hafnia nanotubes by atomic layer deposition (ALD) template methodAbdel-Fattah, Tarek M. / Gu, Diefeng / Baumgart, Helmut / Namkoong, Gon et al. | 2008
- 159
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Synthesis of Zirconia and Hafnia Tubes by Atomic Layer Deposition (ALD) Template MethodAbdel-Fattah, T.M. / Gu, D. / Baumgart, H. / Namkoong, G. / Electrochemical Society et al. | 2008
- 165
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Controlled Synthesis of 3D Nanostructures Using Proximity-Field Nanopatterning Lithography and Graded Temperature ALDGrubbs, R.K. / Ellis, A.R. / Sanchez, A.M. / Wiwi, M. / El-kady, I. / Bogart, K. / Su, M.F. / Christodoulou, C. / Taha, M. / Shir, D.L. et al. | 2008
- 173
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Oxidative Removal of Self-Assembled Monolayers for Selective Atomic Layer DepositionLee, W. / Chao, C. / Jiang, X. / Hwang, J. / Bent, S. / Prinz, F. / Electrochemical Society et al. | 2008
- 181
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Formation of Metal-Semiconductor Core-shell Nanoparticles Using Electrochemical Atomic Layer DepositionGu, C. / Xu, H. / Park, M. / Shannon, C. / Electrochemical Society et al. | 2008
- 193
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PEALD Ru Liner Conformality and Cu Trench Fill Characteristicsvan der Straten, O. / Wynne, J. / Vo, T. / Maniscalco, J. / Nogami, T. / Ali, I. / Chiang, S. / Ren, J. / Ma, P. / Electrochemical Society et al. | 2008
- 201
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Morphology of Electrodeposited Cu on 300 mm PEALD Ru SubstratesKelly, J. / Vo, T. / van der Straten, O. / Huang, Q. / O Neal, B.B. / Shao, X.I. / Chiang, S. / Dukovic, J. / Electrochemical Society et al. | 2008
- 209
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Remote Plasma and Thermal ALD of Platinum and Platinum Oxide FilmsKnoops, H.C. / Mackus, A. / Donders, M. / van de Sanden, M.C. / Notten, P. / Kessels, W.M. / Electrochemical Society et al. | 2008
- 219
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Area Selective Atomic Layer Deposition of Cobalt Thin FilmsLee, H. / Kim, H. / Electrochemical Society et al. | 2008
- 227
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Characteristics of Tantalum Carbo-nitride Thin Films Deposited with Atomic Layer Deposition ProcessSong, M. / Rhee, S. / Electrochemical Society et al. | 2008
- 239
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Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and ConformalityDetavernier, C. / Dendooven, J. / Deduytsche, D. / Musschoot, J. / Electrochemical Society et al. | 2008
- 247
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Plasma-assisted ALC of Al2O3 at low temperatures: Reaction mechanism and material propertiesLangereis, E. / Bouman, M. / Keijmel, J. / Heil, S.B.S. / Sanden, M.C.M. van de / Kessels, W.M.M. et al. | 2008
- 247
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Plasma-Assisted ALD of Al2O3 at Low Temperatures: Reaction Mechanisms and Material PropertiesLangereis, E. / Bouman, M. / Keijmel, J. / Heil, S. / van de Sanden, M.C. / Kessels, W.M. / Electrochemical Society et al. | 2008
- 257
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HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction CycleNyns, L. / Delabie, A. / Caymax, M. / Heyns, M. / Van Elshocht, S. / Vinckier, C. / De Gendt, S. / Electrochemical Society et al. | 2008
- 269
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Comparison of Nanomechanical Behavior of the Amorphous and Crystalline Phases of ALD HfO2Tapily, K. / Jakes, J. / Shrestha, P.R. / Gu, D. / Baumgart, H. / Elmustafa, A. / Electrochemical Society et al. | 2008
- 279
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Carboxylic Acids as Oxygen Supplying Agents for Atomic Layer Deposition of High-k Thin FilmsRauwel, E. / Ducroquet, F. / Rauwel, P. / Willinger, M. / Matko, I. / Kiselev, D. / Pinna, N. / Electrochemical Society et al. | 2008
- 291
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High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond NodesClark, R.D. / Consiglio, S. / Wajda, C. / Leusink, G. / Sugawara, T. / Nakabayashi, H. / Jagannathan, H. / Edge, L.F. / Jamison, P. / Paruchuri, V. et al. | 2008
- 309
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Two Step Annealing of Iridium Thin Films prepared by Plasma-Enhanced Atomic Layer DepositionKim, S. / Kwon, S. / Kang, S. / Electrochemical Society et al. | 2008
- 315
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Atomic Layer Deposited IrO2-TiO2 Thin Film Resistor for the Thermal Inkjet PrintheadsKwon, S. / Kim, S. / Jeong, S. / Kim, K. / Kang, S. / Electrochemical Society et al. | 2008
- 321
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Enhanced Band Gap and Defect Structure of Low Dielectric Photonic Crystals Using ALD CoatingsThitsa, M. / Albin, S. / Electrochemical Society et al. | 2008
- 329
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Photoluminescence of GaQ3-Al2O3 Core-Shell NanowiresWang, C. / Kei, C. / Tao, Y. / Perng, T. / Electrochemical Society et al. | 2008
- 337
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Characteristics of TiSiO Films for VaristorsLim, J. / Yun, S. / Kim, H. / Electrochemical Society et al. | 2008
- 343
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Effects of Film Thickness and Preferred Orientation on the Dielectric Constants of Hf-Aluminate Films Deposited by PEALDMoon, H. / Joo, D. / Park, P. / Kang, S. / Electrochemical Society et al. | 2008
- 349
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In-Situ Probing of Atomic Layer Deposition Processes using Infrared and Near Infrared SpectroscopyO Mahony, A. / Povey, I.M. / Pemble, M.E. / Electrochemical Society et al. | 2008
- 355
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Atomic Vapor Deposited Tantalum Carbo-Nitride Film using TBTDET and HydrogenKim, S. / Song, M. / Rhee, S. / Electrochemical Society et al. | 2008