Indium phosphide nanowire network: growth and characterization for thermoelectric conversion [8467-13] (English)
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In:
Nanoepitaxy: materials and devices IV
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8467 0E
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2012
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Indium phosphide nanowire network: growth and characterization for thermoelectric conversion [8467-13]
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Contributors:Norris, K.J. ( author ) / Zhang, J. ( author ) / Fryauf, D. ( author ) / Rugar, A. ( author ) / Flores, A. ( author ) / Longson, T.J. ( author ) / Lohn, A.J. ( author ) / Kobayashi, N.P. ( author ) / Kobayashi, Nobuhiko P. / Talin, Albert Alec
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Conference:Conference; 4th, Nanoepitaxy: materials and devices IV ; 2012 ; San Diego, CA
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Published in:Nanoepitaxy: materials and devices IV ; 8467 0EPROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 8467 ; 8467 0E
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Publisher:
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Place of publication:Bellingham
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Publication date:2012-01-01
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Size:8467 0E
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Remarks:Includes bibliographical references and index.
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 846701
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Front Matter: Volume 8467
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Enhanced field ionization current enabled by gold induced surface states to silicon nanowires [8467-18]Karaagac, H. / Islam, M.S. / SPIE (Society) et al. | 2012
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Heterogeneous integration of epitaxial nanostructures: strategies and application drivers (Invited Paper) [8467-26]Chui, C.O. / Shin, K.-S. / Kina, J. / Shih, K.-H. / Narayanan, P. / Moritz, C.A. / SPIE (Society) et al. | 2012
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MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color (Invited Paper) [8467-11]Kuo, H.-C. / Cheng, Y.-J. / SPIE (Society) et al. | 2012
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Graded nanowire ultraviolet LEDs by polarization engineering (Invited Paper) [8467-20]Carnevale, S.D. / Kent, T.F. / Phillips, P.J. / Sarwar, A.T.M.G. / Klie, R.F. / Rajan, S. / Myers, R.C. / SPIE (Society) et al. | 2012
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Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition [8467-29]Lohn, A.J. / Dawson, N. / Cormia, R. / Fryauf, D. / Zhang, J. / Norris, K.J. / Kobayashi, N.P. / SPIE (Society) et al. | 2012
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Biofunctionalization of Si nanowires using a solution based technique [8467-1]Williams, E.H. / Davydov, A.V. / Oleshko, V.P. / Lin, N.J. / Steffens, K.L. / Manocchi, A.K. / Krylyuk, S. / Rao, M.V. / Schreifels, J.A. / SPIE (Society) et al. | 2012
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Indium phosphide nanowire network: growth and characterization for thermoelectric conversion [8467-13]Norris, K.J. / Zhang, J. / Fryauf, D. / Rugar, A. / Flores, A. / Longson, T.J. / Lohn, A.J. / Kobayashi, N.P. / SPIE (Society) et al. | 2012
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Contact metal effects in indium phosphide nanowire transistor [8467-34]Han, J. / Lohn, A.J. / Meyyappan, M. / Kobayashi, N.P. / SPIE (Society) et al. | 2012
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Novel optical properties of Ag films deposited by plasma enhanced atomic layer deposition (PEALD) (Invited Paper) [8467-14]Prokes, S.M. / Glembocki, O.J. / Cleveland, E. / SPIE (Society) et al. | 2012
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Light extraction in individual GaN nanowires on Si for LEDs (Invited Paper) [8467-2]Chesin, J. / Zhou, X. / Gradecak, S. / SPIE (Society) et al. | 2012
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Plasma enhanced atomic layer deposition of silver thin films for applications in plasmonics and surface-enhanced Raman scattering [8467-16]Cleveland, E.R. / Glembocki, O. / Prokes, S.M. / SPIE (Society) et al. | 2012
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3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for optoelectronic device applications [8467-33]Karaagac, H. / J., L.V. / Islam, M.S. / SPIE (Society) et al. | 2012
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High electron mobility AlGaN/AlN/GaN HEMT structure with a nano-scale AlN interlayer [8467-31]Huang, S.-C. / Chen, W.-R. / Hsu, Y.-T. / Lin, J.-C. / Chang, K.-J. / Lin, W.-J. / SPIE (Society) et al. | 2012