Growth Characteristics and Properties of Yttrium Oxide Thin Films by Atomic Layer Deposition from Novel Y(iPrCp)~3 Precursor and O~3 (English)
- New search for: Xu, R.
- New search for: Selvaraj, S.
- New search for: Azimi, N.
- New search for: Takoudis, C.G.
- New search for: Electrochemical Society; Electrochemical Society of Japan
- New search for: Xu, R.
- New search for: Selvaraj, S.
- New search for: Azimi, N.
- New search for: Takoudis, C.G.
- New search for: Elam, J.W.
- New search for: Electrochemical Society; Electrochemical Society of Japan
In:
Atomic layer deposition application
13
;
107-116
;
2012
-
ISBN:
-
ISSN:
- Conference paper / Print
-
Title:Growth Characteristics and Properties of Yttrium Oxide Thin Films by Atomic Layer Deposition from Novel Y(iPrCp)~3 Precursor and O~3
-
Contributors:Xu, R. ( author ) / Selvaraj, S. ( author ) / Azimi, N. ( author ) / Takoudis, C.G. ( author ) / Elam, J.W. / Electrochemical Society; Electrochemical Society of Japan
-
Conference:Symposium; 8th, Atomic layer deposition application ; 2012 ; Honolulu, HI
-
Published in:Atomic layer deposition application , 13 ; 107-116ECS TRANSACTIONS, ISSN 1938-5862 ; VOL 50 NO 13 2012 ; 50, 13 ; 107-116
-
Publisher:
- New search for: Electrochemical Society
-
Place of publication:Pennington, N.J.
-
Publication date:2012-01-01
-
Size:10 pages
-
Remarks:Includes bibliographical references and index; Held during the PRiME 2012 joint international meeting of the Electrochemical Society and the Electrochemical Society of Japan
-
ISBN:
-
ISSN:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Fabrication of Sb~2Te~3 and Bi~2Te~3 Multilayer Composite Films by Atomic Layer DepositionZhang, K. / Nminibapiel, D. / Tangirala, M. / Baumgart, H. / Kochergin, V. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 11
-
Trimethylaluminum-Based Atomic Layer Deposition of MO~2 (M=Zr, Hf) Gate Dielectrics on In~0~.~5~3Ga~0~.~4~7As(001) SubstratesMolle, A. / Cianci, E. / Lamperti, A. / Wiemer, C. / Baldovino, S. / Lamagna, L. / Spiga, S. / Fanciulli, M. / Brammertz, G. / Merckling, C. et al. | 2012
- 11
-
Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hi) Gate Dielectrics on In0.53Ga0.47As(001) SubstratesMolle, A. / Cianci, E. / Lamperti, A. / Wiemer, C. / Baldovino, S. / Lamagna, L. / Spiga, S. / Fanciulli, M. / Brammertz, G. / Merckling, C. et al. | 2012
- 23
-
Ion Bombardment during Plasma-Assisted Atomic Layer DepositionProfijt, H.B. / Kessels, W. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 35
-
In Situ Study of ALD Processes Using Synchrotron-based X-ray Fluorescence and Scattering TechniquesDendooven, J. / Devloo-Casier, K. / Ide, M. / Grandfield, K. / Ludwig, K.F. / Bals, S. / Van Der Voort, P. / Detavernier, C. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 43
-
In Situ FTIR Characterization of Growth Inhibition in Atomic Layer Deposition Using Reversible Surface FunctionalizationYanguas-Gil, A. / Libera, J.A. / Elam, J.W. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 53
-
Solution Reactivity Studies for Identification of Promising New ALD and Pulsed CVD Reaction ChemistriesVidjayacoumar, B. / Ramalingam, V. / Emslie, D.J. / Blackwell, J. / Clendenning, S. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 69
-
Crystallization Study by Transmission Electron Microscopy of SrTiO~3 Thin Films Prepared by Plasma-Assisted ALDLongo, V. / Roozeboom, F. / Kessels, W. / Verheijen, M.A. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 79
-
TiO~2-Based Metal-Insulator-Metal Structures for Future DRAM Storage CapacitorsFrohlich, K. / Hudec, B. / Tapajna, M. / Husekova, K. / Rosova, A. / Elias, P. / Aarik, J. / Rammula, R. / Kasikov, A. / Arroval, T. et al. | 2012
- 89
-
Plasma Surface Modification of Blown Polyethylene Films for Uniform Atomic Layer Deposition of Al~2O~3Lee, G. / Son, K. / Park, S. / Shim, J. / Choi, B. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 93
-
Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALDPotts, S.E. / Profit, H.B. / Roelofs, R. / Kessels, W. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 107
-
Growth Characteristics and Properties of Yttrium Oxide Thin Films by Atomic Layer Deposition from Novel Y(iPrCp)~3 Precursor and O~3Xu, R. / Selvaraj, S. / Azimi, N. / Takoudis, C.G. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 117
-
Electrocatalytic Activity of Pt Grown by ALD on Carbon Nanotubes for Si-Based DMFC ApplicationsJohansson, A. / Dalslet, B. / Yang, R. / Haugshoj, K. / Molgaard, M. / Christiansen, K. / Christensen, L.H. / Thomsen, E.V. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 127
-
High Performance Core-Shell Nanowire Array Devices Prepared by Atomic Layer DepositionKim, H. / Ko, K. / Kang, H. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 137
-
Metal Oxide ALD Films for Low Power Sensor ApplicationsBlauw, M.A. / Dam, V.T. / Calama, M.C. / Brongersma, S.H. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 141
-
Enabling High Performance Mirrors for Astronomy with ALDGreer, F. / Lee, M.C. / Nikzad, S. / Traub, W. / Beasley, M. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 151
-
Atomic Layer Deposition of TiN/Al~2O~3/TiN Nanolaminates for Capacitor ApplicationsAssaud, L. / Hanbucken, M. / Santinacci, L. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 159
-
Impact of Direct Plasma Densification on Resistivity and Conformality of PEALD Tantalum Nitridevan der Straten, O. / Zhang, X. / Penny, C. / Maniscalco, J. / Chiang, S. / Ren, J. / Ma, P. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 165
-
Atomic Layer Deposition of Ruthenium in Various Precursors and Oxygen DosesKim, J. / Son, K. / Kim, B. / Kim, W. / Shim, J. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012
- 175
-
Synthesis of VO~2 Thin Films by Atomic Layer Deposition with TEMAV as PrecursorZhang, K. / Tangirala, M. / Nminibapiel, D. / Cao, W. / Pallem, V. / Dussarrat, C. / Baumgart, H. / Electrochemical Society; Electrochemical Society of Japan et al. | 2012