Electrical and optical investigations of carbon clusters formed in organic films by ion implantation (Unknown)
- New search for: Iizuka, M.
- New search for: Kuniyoshi, S.
- New search for: Kudo, K.
- New search for: Tanaka, K.
- New search for: Iizuka, M.
- New search for: Kuniyoshi, S.
- New search for: Kudo, K.
- New search for: Tanaka, K.
- New search for: Andersen, H. H.
- New search for: Rehn, L. E.
In:
Beam Interactions with Materials and Atoms
2
;
1072
;
1993
-
ISSN:
- Article (Journal) / Print
-
Title:Electrical and optical investigations of carbon clusters formed in organic films by ion implantation
-
Contributors:Iizuka, M. ( author ) / Kuniyoshi, S. ( author ) / Kudo, K. ( author ) / Tanaka, K. ( author ) / Andersen, H. H. / Rehn, L. E.
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Published in:Beam Interactions with Materials and Atoms , 2 ; 1072NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B ; 80//81, 2 ; 1072
-
Publisher:
- New search for: ELSEVIER
-
Publication date:1993-01-01
-
Size:1072 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 539.7
- Further information on Dewey Decimal Classification
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Classification:
DDC: 539.7 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 80//81, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 729
-
Implantation induced changes in quantum well structuresKalish, R. / Feldman, L. C. / Jacobson, D. C. / Weir, B. E. et al. | 1993
- 734
-
Intermixing of MeV ion-implanted and annealed AlGaAs/GaAs superlatticesTamura, M. / Hashimoto, A. / Saito, T. et al. | 1993
- 742
-
Ion bombardment of SiO~2/Si and Si measured by in situ X-ray reflectivityChason, E. / Mayer, T. M. / McIlroy, D. / Matzke, C. M. et al. | 1993
- 747
-
Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wellsBradley, I. V. / Gillin, W. P. / Homewood, K. P. / Grey, R. et al. | 1993
- 751
-
Regrowth and strain recovery of Sb implanted Si~1~-~xGe~x strained layersAtzmon, Z. / Eizenberg, M. / Zolotoyabko, E. / Hong, S. Q. et al. | 1993
- 755
-
Ion-beam-induced simultaneous epitaxial growth of - and cubic FeSi~2 in Si (100) at 320CDesimoni, J. / Behar, M. / Bernas, H. / Lin, X. W. et al. | 1993
- 759
-
Influence of impurities on ion beam induced TiSi~2 formationDehm, C. / Raum, B. / Kasko, I. / Ryssel, H. et al. | 1993
- 764
-
Ion beam synthesis of buried CrSi~2 layersDudda, C. / Mantl, S. / Dieker, C. / Dolle, M. et al. | 1993
- 768
-
The fabrication of epitaxial Ge~xSi~1~-~x layers by ion implantationElliman, R. G. / Wong, W. C. et al. | 1993
- 773
-
Ion implantation and annealing of Fe for semi-insulating layers formation in InPGasparotto, A. / Carnera, A. / Arzenton, G. / Tromby, M. et al. | 1993
- 777
-
Formation of relaxed Si~1~-~xGe~x layers on SIMOX by high-dose ^7^4Ge ion implantationHollaender, B. / Mantl, S. / Michelsen, W. / Mesters, S. et al. | 1993
- 781
-
A comparison of shallow and deep iron silicide layers fabricated by ion beam synthesisHunt, T. D. / Reeson, K. J. / Gwilliam, R. M. / Homewood, K. P. et al. | 1993
- 786
-
Effect of ion-beam mixing temperature on cobalt silicide formationKasko, I. / Dehm, C. / Frey, L. / Ryssel, H. et al. | 1993
- 790
-
Low-energy ion-beam-induced epitaxial crystallization of GaAsKobayashi, N. / Hasegawa, M. / Hayashi, N. et al. | 1993
- 795
-
On the ion beam synthesis of GaAsSb alloysKozanecki, A. / Groetzschel, R. et al. | 1993
- 798
-
X-ray and channeling analysis of ion implanted gallium arsenideKozanecki, A. / Sealy, B. J. / Gwilliam, R. / Kidd, P. et al. | 1993
- 802
-
High-dose implantations of Al into Si(111) and Si(100)Daley, R. S. / Musket, R. G. et al. | 1993
- 807
-
High-energy high-dose Ni irradiation of SOI structuresLindner, J. K. N. / Kersten, P. / Te Kaat, E. H. / Henke, S. et al. | 1993
- 813
-
Thin buried oxide in implanted siliconMeda, L. / Bertoni, S. / Cerofolini, G. F. / Spaggiari, C. et al. | 1993
- 818
-
Epitaxial metal island formation on Si(111) by cluster deposition from a beamJonk, P. / Hector, R. / Wittenberg, F. / Meiwes-Broer, K. H. et al. | 1993
- 822
-
Direct formation of device worthy thin film SIMOX structures by low energy oxygen implantationNejim, A. / Li, Y. / Marsh, C. D. / Hemment, P. L. F. et al. | 1993
- 827
-
Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wiresPrins, F. E. / Lehr, G. / Burkard, M. / Schweizer, H. et al. | 1993
- 831
-
Growth and electrical properties of ion implanted FeSi~2 on (111)SiRadermacher, K. / Mantl, S. / Gerthsen, D. / Dieker, C. et al. | 1993
- 835
-
MeV In-ion implantation for electrical isolation of p^+-InPRidgway, M. C. / Elliman, R. G. / Hauser, N. et al. | 1993
- 838
-
Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysisSamitier, J. / Martinez, S. / Perez-Rodriguez, A. / Garrido, B. et al. | 1993
- 842
-
Residual stress during local SIMOX process: Raman measurement and simulationSeidl, A. / Takai, M. / Sayama, H. / Haramura, K. et al. | 1993
- 846
-
High-dose mixed Ga/As and Ga/P ion implantations in silicon single crystalsShiryaev, S. Y. / Nylandsted Larsen, A. et al. | 1993
- 851
-
Segregation of dopants in ion beam synthesised CoSi~2 layersReeson, K. J. / Hunt, T. D. / Gwilliam, R. M. / Sealy, B. J. et al. | 1993
- 857
-
Concentration profiles of high dose MeV oxygen implanted siliconTouhouche, K. / Jackman, J. / Yelon, A. et al. | 1993
- 862
-
Precipitation kinetics in silicon during ion beam synthesis of buried silicide layersTrinkaus, H. / Mantl, S. et al. | 1993
- 867
-
Ion beam synthesis of ternary (Fe~1~-~xCo~x)Si~2Wieser, E. / Panknin, D. / Skorupa, W. / Querner, G. et al. | 1993
- 872
-
Production and in-situ analysis of microscale oxide structures in silicon by oxygen implantationWittmaack, K. et al. | 1993
- 877
-
Effect of the incidence geometry on the ion induced Ni-silicides surface compositional modificationsVerucchi, R. / Scorzoni, C. / Valeri, S. et al. | 1993
- 881
-
Interface structure during ion-beam-induced epitaxial crystallization of siliconCuster, J. S. / Battaglia, A. / Saggio, M. / Priolo, F. et al. | 1993
- 889
-
Ion implantation effects in silicon carbideMcHargue, C. J. / Williams, J. M. et al. | 1993
- 895
-
Ion beam synthesis of buried metallic and semiconducting silicidesMantl, S. et al. | 1993
- 901
-
Lattice damage in ion implanted silicon-germanium alloysHaynes, T. E. / Holland, O. W. et al. | 1993
- 906
-
Ion beam synthesis of CoSi~2 in Si~1~-~xGe~x alloy layers with different Ge concentrationsLauwers, A. / Maex, K. / Vanhellemont, J. / Caymax, M. et al. | 1993
- 910
-
Ion implantation of isoelectronic impurities into InPYamada, A. / Makita, Y. / Mayer, K. M. / Iida, T. et al. | 1993
- 915
-
Influence of Al and P doping on optical and electrical properties of ion beam synthesized SiCBattaglia, A. / Derst, G. / Kalbitzer, S. et al. | 1993
- 919
-
Ion implantation and rapid thermal annealing of Au-Cd~xHg~1~-~xTe structuresGerasimenko, N. N. / Nesterov, A. A. / Vasil'ev, V. V. et al. | 1993
- 924
-
Redistribution of magnesium in InAs during post-implantation annealingGerasimenko, N. N. / Myasnikov, A. M. / Obodnikov, V. I. / Safronov, L. N. et al. | 1993
- 927
-
Ion implantation doping of polycrystalline SiC thin films prepared by PECVDKroetz, G. / Hellmich, W. / Mueller, G. / Derst, G. et al. | 1993
- 931
-
Composition changes in Ar^+ and e^--bombarded SiC: an attempt to distinguish ballistic and chemically guided effectsMiotello, A. / Calliari, L. / Kelly, R. / Laidani, N. et al. | 1993
- 938
-
Disorder creation and annealing in Hg implanted CdTeTraverse, A. / Leo, G. / Alves, J. G. / Almeida, P. M. et al. | 1993
- 943
-
Polytype transitions in ion implanted silicon carbidePezoldt, J. / Kalnin, A. A. / Moskwina, D. R. / Savelyev, W. D. et al. | 1993
- 949
-
Thermal stability of Si/CoSi~2 multiple layer systemsSchippel, S. / Witzmann, A. / Lindner, J. K. N. et al. | 1993
- 957
-
The contribution of ion-beam techniques to the physics and technology of amorphous semiconductorsMueller, G. et al. | 1993
- 966
-
Environments of ion-implanted dopants in amorphous silicon at various stages of annealingGreaves, G. N. / Dent, A. J. / Dobson, B. R. / Kalbitzer, S. et al. | 1993
- 973
-
In situ analysis of irradiation-induced crystal nucleation in amorphous silicon: a "microscope" for thermodynamic processes in nucleationShin, J. H. / Atwater, H. A. et al. | 1993
- 978
-
Properties of fully implanted amorphous Si~xC~1~-~x:H alloysCompagnini, G. / Calcagno, L. / Foti, G. et al. | 1993
- 982
-
Structural relaxation in amorphous silicon prepared by ion implantationHiroyama, Y. / Motooka, T. / Tokuyama, T. / Wei, L. et al. | 1993
- 986
-
Recrystallization of In and P implanted InPKringhoej, P. / Shiryaev, S. Y. et al. | 1993
- 990
-
Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealingKuznetsov, A. Y. / Khodos, I. I. / Mordkovich, V. N. / Vyatkin, A. F. et al. | 1993
- 994
-
Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ionsKuriyama, K. / Takahashi, H. / Shimoyama, K. / Hayashi, N. et al. | 1993
- 998
-
Theory of diffusion processes in implanted siliconAntoncik, E. et al. | 1993
- 1002
-
Studies of reactive ion etching using Colutron hot filament dc plasma ion sourcesBello, I. / Chang, W. H. / Feng, X. H. / Lau, W. M. et al. | 1993
- 1006
-
Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channelingHayashi, N. / Suzuki, R. / Watanabe, H. / Sakamoto, I. et al. | 1993
- 1010
-
Dry and wet etching properties of thermally grown silicon dioxide layer after N^+ ion implantation and annealingKudo, K. / Kuniyoshi, S. / Tanaka, K. et al. | 1993
- 1014
-
X-ray diffraction, Rutherford backscattering and channeling measurements on Pb inclusions in SiMilants, K. / Hendrickx, P. / Pattyn, H. et al. | 1993
- 1021
-
The multi-aspects of ion beam modification of insulatorsDavenas, J. / Thevenard, P. et al. | 1993
- 1028
-
Transport phenomena in implanted electroactive polymersMoliton, A. / Moreau, C. / Moliton, J.-P. / Froyer, G. et al. | 1993
- 1036
-
Ion implantation effects in Al~2O~3: hydration and optical absorptionArnold, G. W. et al. | 1993
- 1040
-
Defect generation and healing in SiC powder subjected to Ar implantationHeuberger, M. / Telle, R. / Petzow, G. et al. | 1993
- 1045
-
Heat-induced versus particle-beam-induced chemistry in polyimideMarletta, G. / Iacona, F. et al. | 1993
- 1050
-
Improvement of surface properties of polymers by ion implantationOechsner, R. / Kluge, A. / Zechel-Malonn, S. / Gong, L. et al. | 1993
- 1055
-
Chemical and energy deposition effects of keV ions on the adhesion of Cu films onto polymersTegen, N. / Wartusch, J. / Merkel, K.-H. et al. | 1993
- 1059
-
RBS study of oxidation processes in polypropylene and polyethylene implanted with fluorine ionsHnatowicz, V. / Havranek, V. / Kvitek, J. / Perina, V. et al. | 1993
- 1063
-
Infrared analysis of the irradiation effects in aromatic polyimide filmsXu, D. / Xu, X. L. / Du, G. D. / Wang, R. et al. | 1993
- 1067
-
Surface modification of polystyrene for improving wettability by ion implantationSuzuki, Y. / Kusakabe, M. / Iwaki, M. et al. | 1993
- 1072
-
Electrical and optical investigations of carbon clusters formed in organic films by ion implantationIizuka, M. / Kuniyoshi, S. / Kudo, K. / Tanaka, K. et al. | 1993
- 1076
-
Modification of conducting polymers by low energy reactive ion beams and their chemical effectsJung, K. G. / Schultze, J. W. / Buchal, C. et al. | 1993
- 1080
-
Characterization of Ag- and W-implanted polyimide filmsIwaki, M. / Yabe, K. / Fukuda, A. / Watanabe, H. et al. | 1993
- 1085
-
On the influence of low energy tantalum ion implantation on indentation fracture and hardness of -alumina single crystalsEnsinger, W. / Nowak, R. et al. | 1993
- 1091
-
TEM-microstructural investigations of ion beam modified ceramics with respect to their macroscopic propertiesFischer, W. / Wolf, G. K. / Ruoff, H. / Katerbau, K.-H. et al. | 1993
- 1097
-
Ion implantation and ion beam assisted deposition onto cemented tungsten carbide and syalonGuzman, L. / Scotoni, I. / Miotello, A. / Elena, M. et al. | 1993
- 1101
-
Microstructural characterization of zirconia films produced by the dual ion beam deposition techniqueHuang, N. K. / Colligon, J. S. / Kheyrandish, H. / Tang, Y. S. et al. | 1993
- 1104
-
Ion beam induced epitaxial crystallization of sapphireZhou, W. / Sood, D. K. / Elliman, R. G. / Ridgway, M. C. et al. | 1993
- 1109
-
Ion irradiation-induced nano-scale polycrystallization of intermetallic and ceramic materialsWang, L. M. / Birtcher, R. C. / Ewing, R. C. et al. | 1993
- 1114
-
High energy heavy ion irradiation effects in -Al~2O~3Canut, B. / Ramos, S. M. M. / Thevenard, P. / Moncoffre, N. et al. | 1993
- 1119
-
Ion beam modification of aromatic polymersShukushima, S. / Nishikawa, S. / Matsumoto, Y. / Hibino, Y. et al. | 1993
- 1123
-
Electrical conductivity in niobium implanted TiO~2 rutileRamos, S. M. M. / Canut, B. / Brenier, R. / Gea, L. et al. | 1993
- 1128
-
Ion beam irradiation effect on solubility of spin-on glass to methanolYanagisawa, J. / Koh, Y.-B. / Gamo, K. et al. | 1993
- 1135
-
Waveguides and waveguide lasers fabricated by ion implantationChandler, P. J. / Townsend, P. D. et al. | 1993
- 1143
-
Processing high-T~c superconductors with GeV heavy ionsMarwick, A. D. / Civale, L. / Krusin-Elbaum, L. / Wheeler, R. et al. | 1993
- 1150
-
Ion implanted optical waveguides in KNbO~3 for efficient blue light second harmonic generationFleuster, M. / Buchal, C. / Fluck, D. / Guenter, P. et al. | 1993
- 1154
-
Composition changes in bombarded oxides and carbides: the distinction between ballistic, chemically guided, and chemically random behaviorKelly, R. / Bertoti, I. / Miotello, A. et al. | 1993
- 1164
-
Irradiation experiments on HTSC thin filmsKroener, T. / Linker, G. / Meyer, O. / Strehlau, B. et al. | 1993
- 1168
-
XPS studies on the charge states of Cr and Cu atoms implanted into -Al~2O~3 and MgO single crystalsFutagami, T. / Aoki, Y. / Yoda, O. / Nagai, S. et al. | 1993
- 1171
-
Modification of the optical spectra of glass by metal ion implantationYao, X. Y. / Fojas, P. B. / Brown, I. G. / Rubin, M. D. et al. | 1993
- 1174
-
Quantitative investigations of the removal of glass material by low energy ion beams with the use of optical interferometryWeiser, M. et al. | 1993
- 1178
-
Hydrogen assisted crystallisation of strontium titanateSimpson, T. W. / Mitchell, I. V. et al. | 1993
- 1182
-
Ion-implanted optical waveguides in zinc tungstateRodman, M. J. / Chandler, P. J. / Townsend, P. D. et al. | 1993
- 1185
-
Incorporation of Nd implanted in strontiumtitanate studied with photoluminescenceTenner, M. G. / Kessener, Y. A. R. R. / Overwijk, M. H. F. et al. | 1993
- 1189
-
Zirconium implantation into oxygen implanted ironTakahashi, J. / Terashima, K. / Iwaki, M. et al. | 1993
- 1192
-
Substrate effects in silver-implanted glassesMazzoldi, P. / Tramontin, L. / Boscolo-Boscoletto, A. / Battaglin, G. et al. | 1993
- 1197
-
Suppression of charge-up on the surface of glass during ion implantation by a large scale ion sourceAndoh, Y. et al. | 1993
- 1203
-
Formation of conductive layers on dielectric substrates by ion bombardmentPichugin, V. F. / Frangulian, T. S. / Kryuchkov, Y. Y. / Feodorov, A. N. et al. | 1993
- 1207
-
Spectroscopic analysis of proton induced fluorescence from cerium doped yttrium aluminum garnetFisher, J. H. / Hollerman, W. A. / Shelby, G. A. / Holland, L. R. et al. | 1993
- 1210
-
Plastic flow induced by ionization processes in ion-damaged MgOBrenier, R. / Canut, B. / Gea, L. / Ramos, S. M. M. et al. | 1993
- 1215
-
Effects of implantation dose on the inhomogeneous broadening of zero phonon lines in LiFBlieden, G. S. / Comins, J. D. / Derry, T. E. et al. | 1993
- 1219
-
Response of oxides to ion bombardment: the difference between inert and reactive ionsBertoti, I. / Kelly, R. / Mohai, M. / Toth, A. et al. | 1993
- 1226
-
Radiation damage in Tb-implanted CaF~2 observed by channeling and luminescence measurementsAono, K. / Kumagai, M. / Iwaki, M. / Aoyagi, Y. et al. | 1993
- 1230
-
Ion synthesis in coatings on glassesDeshkovskaya, A. / Yanishevskii, V. / Gritsai, S. / Lynkov, L. et al. | 1993
- 1233
-
Anomalous fringe pattern of Ag colloid in phosphate glasses by implantationMatsunami, N. / Hosono, H. et al. | 1993
- 1237
-
On the nature and efficiency of colouration of MgF~2 crystals by 100 keV ionsDavidson, A. T. / Raphuthi, A. M. J. / Comins, J. D. / Derry, T. E. et al. | 1993
- 1241
-
Study of Fe:Al~2O~3 ion beam sputtered thin films with various iron contentsThimon, F. / Marest, G. / Moncoffre, N. / Joshi, S. et al. | 1993
- 1245
-
Ion beam modification of Gd~2Ti~2O~7Weber, W. J. / Hess, N. J. et al. | 1993
- 1249
-
Structural modifications of yttrium iron garnet after high-energy heavy ion irradiationsCostantini, J. M. / Ravel, F. / Brisard, F. / Caput, M. et al. | 1993
- 1255
-
Radiation damage and flux pinning in high temperature superconductorsLiu, J. R. / Kulik, J. / Zhao, Y. J. / Chu, W. K. et al. | 1993
- 1259
-
Radiation defects in the oxygen sublattice of UO~2 single crystalsTuros, A. / Matzke, H. / Wielunski, M. / Nowicki, L. et al. | 1993
- 1264
-
Surface morphology changes in ion implanted chalcogenide films after annealingTsvetkova, T. / Balabanov, S. / Amov, B. / Djakov, A. et al. | 1993
- 1271
-
Focused ion beam lithographyMelngailis, J. et al. | 1993
- 1281
-
Plasma synthesis of metallic and composite thin films with atomically mixed substrate bondingBrown, I. G. / Anders, A. / Anders, S. / Dickinson, M. R. et al. | 1993
- 1288
-
Energy spread of a focused ion beam system with a supertipMaisch, T. / Wilbertz, C. / Miller, T. / Kalbitzer, S. et al. | 1993
- 1292
-
Maskless fabrication of contact vias by focused MeV heavy ion beamMokuno, Y. / Horino, Y. / Kinomura, A. / Chayahara, A. et al. | 1993
- 1296
-
Stitching Al films on SiO~2 substrates by Al ion implantationSu, X. W. / Zhang, Q. Y. / Jin, S. / Wang, R. et al. | 1993
- 1300
-
Interfacial properties of ion beam mixed Cu/SiO~2 systemKim, K. S. / Choi, I. S. / Lee, Y. S. / Kim, Y. W. et al. | 1993
- 1304
-
Adhesion enhancement of metallized thin films on alumina ceramics by ion beam mixingHasuyama, H. / Shima, Y. / Hayashi, N. / Sakamoto, I. et al. | 1993
- 1308
-
Development of a crack gauge by using ion beam mixingOhno, S. / Shigenaka, N. / Fuse, M. / Ibe, H. et al. | 1993
- 1313
-
Properties of ErBa~2Cu~3O~7~-~x thin films formed by ionized cluster beam deposition at low pressureShuhara, A. / Ritoh, N. / Takagi, T. / Haraguchi, E. et al. | 1993
- 1316
-
Thermal behavior study of Sb implanted into photoresist filmMaltez, R. L. / Amaral, L. / Behar, M. / Zawislak, F. C. et al. | 1993
- 1320
-
Thin films from energetic cluster impact; experiment and molecular dynamics simulationsHaberland, H. / Insepov, Z. / Karrais, M. / Mall, M. et al. | 1993
- 1324
-
Focused-ion-beam-induced tungsten deposition: theory and experimentOverwijk, M. H. F. / Van den Heuvel, F. C. et al. | 1993
- 1328
-
Transferring Gus gene into intact rice cells by low energy ion beamZengliang, Y. / Jianbo, Y. / Yuejin, W. / Beijiu, C. et al. | 1993
- 1332
-
Effects of H-implantation on the optical stability under photo-irradiation of urushi filmsAwazu, K. / Nishimura, Y. / Ichikawa, T. / Sakamoto, M. et al. | 1993
- 1336
-
High-intensity ionized cluster beams for surface modification: deposition and erosionGspann, J. et al. | 1993
- 1343
-
Advantages of dynamic ion beam mixingKiuchi, M. et al. | 1993
- 1349
-
Effects of Ar ion beam bombardment on the formation of cubic BN in IBEDTanabe, N. / Iwaki, M. et al. | 1993
- 1356
-
Synthesis and properties of microlaminate structures by ion beam assisted depositionWas, G. S. / Jones, J. W. / Kalnas, C. E. / Parfitt, L. J. et al. | 1993
- 1362
-
Electrical characterization of MOS structures fabricated on SF~6 and SF~6 + C~2ClF~5 reactive ion etched siliconCastan, E. / Vicente, J. / Barbolla, J. / Cabruja, E. et al. | 1993
- 1367
-
Etching rate modification in silicon oxide by ion implantation and rapid thermal annealingDominguez, C. / Garrido, B. / Montserrat, J. / Morante, J. R. et al. | 1993
- 1371
-
Surface morphology and epitaxy of -FeSi~2 obtained by ion beam assisted growthRavesi, S. / Terrasi, A. / La Mantia, A. et al. | 1993
- 1376
-
Basic characteristics of chromium nitride films by dynamic ion beam mixingSugiyama, K. / Hayashi, K. / Sasaki, J. / Ichiko, O. et al. | 1993
- 1380
-
The properties of titanium nitride prepared by dynamic ion mixingNagasaka, H. / Tsuchiya, N. / Kiuchi, M. / Chayahara, A. et al. | 1993
- 1384
-
First stages study of high energy ion beam assisted depositionArnault, J. C. / Delafond, J. / Templier, C. / Chaumont, J. et al. | 1993
- 1388
-
Low temperature fabrication of ceramic film by ICVD method using ion beamKiyama, S. / Hirano, H. / Domoto, Y. / Kuramoto, K. et al. | 1993
- 1392
-
IBAD growing of magnetic iron nitride thin filmsHuebler, R. / Teixeira, S. R. / Schreiner, W. H. / Baumvol, I. J. R. et al. | 1993
- 1397
-
The effects of deposition temperature and interlayer thickness on the adhesion of ion-assisted titanium nitride films produced with yttrium metal interlayersJones, A. M. / McCabe, A. R. / Bull, S. J. / Dearnaley, G. et al. | 1993
- 1402
-
Titanium nitride film formation by the dynamic ion beam mixing methodNakagawa, Y. / Ohtani, S. / Nakata, T. / Mikoda, M. et al. | 1993
- 1406
-
Titanium oxide films prepared by dynamic ion mixingSetsuhara, Y. / Aoki, H. / Miyake, S. / Chayahara, A. et al. | 1993
- 1409
-
Microstructural investigations on titanium nitride films formed by medium energy ion beam assisted depositionEnsinger, W. / Rauschenbach, B. et al. | 1993
- 1415
-
Ion beam mixing of Al-AlN multilayers for tribological and corrosion protectionHuebler, R. / Wolf, G. K. / Schreiner, W. H. / Baumvol, I. J. R. et al. | 1993
- 1419
-
Ion implantation assisted epitaxial alignment of oxide thin films prepared by spin-coating of liquid precursorsBraunstein, G. / Paz-Pujalt, G. R. et al. | 1993
- 1423
-
Synthesis of aluminum oxide thin films by ion beam and vapor deposition technologyOgata, K. / Yamaguchi, K. / Kiyama, S. / Hirano, H. et al. | 1993
- 1427
-
Role of ion beam energy for crystalline growth of thin filmsOgata, K. / Andoh, Y. / Fujimoto, F. et al. | 1993
- 1433
-
Ion beam modification and dopant activation in diamondPrins, J. F. et al. | 1993
- 1441
-
Adherence of diamondlike carbon coatings on total joint substrate materialsLankford, J. / Blanchard, C. R. / Agrawal, C. M. / Micallef, D. M. et al. | 1993
- 1446
-
Radiation damage study of polycrystalline CVD and natural type IIA diamonds using Raman and photoluminescence spectroscopiesHan, S. / Prussin, S. G. / Ager, J. W. / Pan, L. S. et al. | 1993
- 1451
-
The effect of carbon and nitrogen implantation on the abrasion resistance of type IIa (110) diamondAnderson, G. C. / Prawer, S. / Johnston, P. / McCulloch, D. et al. | 1993
- 1456
-
Doping of fullerenes by ion implantationKastner, J. / Kuzmany, H. / Palmetshofer, L. / Bauer, P. et al. | 1993
- 1460
-
Structural and chemical bonding investigation of tungsten implanted glassy carbonMcCulloch, D. / Hoffman, A. / Evans, P. J. / Prawer, S. et al. | 1993
- 1464
-
Characterization of hard amorphous carbon films implanted with nitrogen ionsFreire, F. L. / Achete, C. A. / Franceschini, D. F. / Gatts, C. et al. | 1993
- 1468
-
Dynamics of B sublimation from boron doped graphite USB15Schwoerer, R. / Garcia-Rosales, C. / Roth, J. et al. | 1993
- 1472
-
Modification of interfacial characteristics between diamondlike carbon films and substrates by using ion bombardmentHirvonen, J.-P. / Koskinen, J. / Koponen, I. / Likonen, J. et al. | 1993
- 1477
-
X-ray diffraction studies of self-ion irradiated synthetic single crystal diamondMaeta, H. / Haruna, K. / Bang, L. / Ono, F. et al. | 1993
- 1480
-
Cross-sectional transmission electron microscopy investigation of xenon irradiated glassy carbonMcCulloch, D. / Prawer, S. / Hoffman, A. / Sood, D. K. et al. | 1993
- 1485
-
The synthesis and properties of BN films prepared by ion irradiation and vapor depositionNishiyama, S. / Kuratani, N. / Ebe, A. / Ogata, K. et al. | 1993
- 1489
-
Structural characterization of ion implanted HOPG and glass-like carbon by laser Raman spectroscopyWatanabe, H. / Takahashi, K. / Iwaki, M. et al. | 1993
- 1494
-
Fluorine implantation-induced ESR splitting in a-C:H thin filmsWong, S. P. / Peng, S. / Ke, N. / Li, P. et al. | 1993
- 1499
-
Use of ion implantation for improving the adhesion of diamond-like carbon films deposited by means of other techniquesPivin, J. C. / Lee, T. J. / You, J. H. / Park, H. et al. | 1993
- 1502
-
Tribological evaluation of hydrogen-free ion beam deposited diamondlike carbon coatingsLempert, G. D. / Lifshitz, Y. / Rotter, S. / Armini, A. J. et al. | 1993
- 1507
-
Ion stimulated densification of amorphous carbon filmsUllmann, J. / Wolf, G. K. / Moeller, W. et al. | 1993