Growth and structural properties of epitaxial Pb(Zr~xTi~1~-~x)O~3 films and Pb(Zr~xT~1~-~x)O~3-cuprate heterostructures (English)
- New search for: Triscone, J.-M.
- New search for: Frauchiger, L.
- New search for: Decroux, M.
- New search for: Mieville, L.
- New search for: Fischer, O.
- New search for: Beeli, C.
- New search for: Stadelmann, P.
- New search for: Racine, G.-A.
- New search for: Triscone, J.-M.
- New search for: Frauchiger, L.
- New search for: Decroux, M.
- New search for: Mieville, L.
- New search for: Fischer, O.
- New search for: Beeli, C.
- New search for: Stadelmann, P.
- New search for: Racine, G.-A.
In:
JOURNAL OF APPLIED PHYSICS
;
79
, 8//1
;
4298-4305
;
1996
-
ISSN:
- Article (Journal) / Print
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Title:Growth and structural properties of epitaxial Pb(Zr~xTi~1~-~x)O~3 films and Pb(Zr~xT~1~-~x)O~3-cuprate heterostructures
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Contributors:Triscone, J.-M. ( author ) / Frauchiger, L. ( author ) / Decroux, M. ( author ) / Mieville, L. ( author ) / Fischer, O. ( author ) / Beeli, C. ( author ) / Stadelmann, P. ( author ) / Racine, G.-A. ( author )
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Published in:JOURNAL OF APPLIED PHYSICS ; 79, 8//1 ; 4298-4305
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Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
-
Publication date:1996-01-01
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Size:8 pages
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ISSN:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 530.5 / 530
- Further information on Dewey Decimal Classification
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Classification:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 79, Issue 8//1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3811
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Calorimetric single particle detection in high magnetic fields at low temperaturesDe Moor, P. / Camps, J. / Schuurmans, P. / Severijns, N. / Vanderpoorten, W. / Van Geert, A. / Vanhellemont, Y. / Vanneste, L. / Wouters, J. / Coron, N. et al. | 1996
- 3816
-
Two-photon-induced optical switching using a CdTe etalonHamad, A. Y. / Wicksted, J. P. et al. | 1996
- 3823
-
Optical injection effects and all-optical set-reset operations in two-segment strained multiquantum-well distributed feedback bistable lasersZhou, J. / Cada, M. / Li, G. P. / Makino, T. et al. | 1996
- 3827
-
Analysis of the optical confinement factor in semiconductor lasersHuang, Y.-Z. / Pan, Z. / Wu, R.-H. et al. | 1996
- 3831
-
Spectrally resolved near-field mode imaging of vertical cavity semiconductor lasersHoersch, I. / Kusche, R. / Marti, O. / Weigl, B. / Ebeling, K. J. et al. | 1996
- 3835
-
CO~2 laser light absorption characteristics of metal powdersHaag, M. / Huegel, H. / Albright, C. E. / Ramasamy, S. et al. | 1996
- 3842
-
Laser-induced ignition of single crystals of the secondary explosive cyclotrimethylene trinitramineRamaswamy, A. L. / Field, J. E. et al. | 1996
- 3848
-
Axial distributions of metastable atoms and charged particles in an ultrahigh frequency argon plasma column at moderate pressuresBenova, E. / Petrova, T. / Blagoev, A. / Zhelyazkov, I. et al. | 1996
- 3853
-
Two-dimensional sheath evolution in a negative ion plasmaEl-Zein, Y. / Amin, A. / Shen, C. / Yi, S. / Lonngren, K. E. / Sheridan, T. E. et al. | 1996
- 3861
-
Electron-driven rates in HeXe glow dischargesDrallos, P. J. / Nagorny, V. P. / Williamson, W. et al. | 1996
- 3877
-
Microstreamer dynamics during plasma remediation of NO using atmospheric pressure dielectric barrier dischargesGentile, A. C. / Kushner, M. J. et al. | 1996
- 3886
-
The role of diluents in electronegative fluorinated gas dischargesLangan, J. G. / Beck, S. E. / Felker, B. S. / Rynders, S. W. et al. | 1996
- 3895
-
Frequency upshifting with power intensification of a whistler wave by a collapsing plasma mediumKalluri, D. K. et al. | 1996
- 3900
-
Pulsed laser-induced damage threshold of thin aluminum films on quartz: Experimental and theoretical studiesLee, K. C. / Chan, C. S. / Cheung, N. H. et al. | 1996
- 3906
-
Lifetime in proton irradiated siliconHallen, A. / Keskitalo, N. / Masszi, F. / Nagl, V. et al. | 1996
- 3915
-
Coimplantation of silver and halogens in thin SiO~2 filmsPham, M. T. / Moeller, D. / Hueller, J. / Albrecht, J. et al. | 1996
- 3921
-
Raman scattering probe of ion-implanted and pulse laser annealed GaAsVerma, P. / Jain, K. P. / Abbi, S. C. et al. | 1996
- 3927
-
Raman-scattering assessment of Si^+-implantation damage in InPCusco, R. / Talamas, G. / Artus, L. / Martin, J. M. / Gonzalez-Diaz, G. et al. | 1996
- 3930
-
Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown n-type Al~0~.~3Ga~0~.~7As doped with TeMurai, A. / Nishizawa, J.-I. / Oyama, Y. / Suto, K. / Chubachi, N. et al. | 1996
- 3935
-
Formation of supersaturated solid solutions in the immiscible Ni-Ag system by mechanical alloyingXu, J. / Herr, U. / Klassen, T. / Averback, R. S. et al. | 1996
- 3946
-
Two-phase coexistence in Fe-Ni alloys synthesized by ball millingHong, L. B. / Fultz, B. et al. | 1996
- 3956
-
High-temperature phase transformations of iron anhydrous ammonia system realized by ball milling at room temperatureChen, Y. / Williams, J. S. / Wang, G. M. et al. | 1996
- 3963
-
Calculation of nonlinear effective elastic constants of polycrystalline materialsKiewel, H. / Fritsche, L. / Reinert, T. et al. | 1996
- 3967
-
Mechanical properties of Al-Y-Ni amorphous ribbonsFreitag, J. M. / Koknaev, R. G. / Sabet-Sharghi, R. / Koknaeva, M. / Altounian, Z. et al. | 1996
- 3971
-
Direct measurements of strain in shock-loaded glass specimensRosenberg, Z. / Bourne, N. K. / Millett, J. C. F. et al. | 1996
- 3975
-
Effect of grain boundary ledge on the dislocation-free zone model of fracture: Transgranular microcrack nucleated from a grain boundary ledgeShiue, S.-T. et al. | 1996
- 3984
-
Thermal diffusivity of anisotropic materials by photothermal methodsSalazar, A. / Sanchez-Lavega, A. / Ocariz, A. / Guitonny, J. / Pandey, G. C. / Fournier, D. / Boccara, A. C. et al. | 1996
- 3994
-
Low-temperature thermal conduction in particle-dispersed polyethyleneNakamura, H. / Matsuura, M. / Kawasaki, K. / Hiki, Y. / Kogure, Y. et al. | 1996
- 4002
-
The effect of rare-earth filling on the lattice thermal conductivity of skutteruditesNolas, G. S. / Slack, G. A. / Morelli, D. T. / Tritt, T. M. / Ehrlich, A. C. et al. | 1996
- 4009
-
Background Si-doping effects on Zn diffusion-induced disordering in GaAs/AlGaAs multiple-quantum-well structuresNguyen Hong Ky / Ganiere, J. D. / Reinhart, F. K. / Blanchard, B. et al. | 1996
- 4017
-
Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxyKurishima, K. / Kobayashi, T. / Ito, H. / Goesele, U. et al. | 1996
- 4024
-
Redistribution of in situ doped or ion-implanted nitrogen in polysiliconNakayama, S. / Sakai, T. et al. | 1996
- 4029
-
Phase modification by instantaneous heat treatment of Sb~2S~3 films and their potential for photothermal optical recordingArun, P. / Vedeshwar, A. G. et al. | 1996
- 4037
-
Theory of microstructure and mechanics of the ...a~1/a~2/a~1/a~2... domain pattern in epitaxial ferroelectric and ferroelastic filmsRomanov, A. E. / Pompe, W. / Speck, J. S. et al. | 1996
- 4050
-
Mass density and hydrogen content of diamondlike carbon as related to the preparation by plasma-enhanced chemical vapor depositionVigild, M. E. / Findeisen, E. / Feidenhans'l, R. / Barholm-Hansen, C. / Bentzon, M. D. / Bindslev Hansen, J. et al. | 1996
- 4057
-
Structure and properties of tin-doped indium oxide thin films prepared by reactive electron-beam evaporation with a zone-confining arrangementRauf, I. A. et al. | 1996
- 4066
-
Fabrication and optical properties of Si/CaF~2(111) multi-quantum wellsBassani, F. / Vervoort, L. / Mihalcescu, I. / Vial, J. C. / Arnaud d'Avitaya, F. et al. | 1996
- 4072
-
Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structuresLiang, J. M. / Chen, L. J. et al. | 1996
- 4078
-
Formation of Ni silicide from Ni(Au)films on (111)SiMangelinck, D. / Gas, P. / Grob, A. / Pichaud, B. / Thomas, O. et al. | 1996
- 4087
-
Kinetics of silicide formation measured by in situ ramped resistance measurementsColgan, E. G. / D'Heurle, F. M. et al. | 1996
- 4096
-
Kirkendall voids and the formation of amorphous phase in the Al-Pt thin-film system prepared by high-temperature successive depositionRadi, Z. / Barna, P. B. / Labar, J. et al. | 1996
- 4101
-
Determination of the lattice strain and chemical composition of semiconductor heterostructures by high-resolution x-ray diffractionDe Caro, L. / Giannini, C. / Tapfer, L. et al. | 1996
- 4111
-
Crystallographic tilting in lattice-mismatched heteroepitaxy: A Dodson-Tsao relaxation approachRiesz, F. et al. | 1996
- 4118
-
Pulsed laser induced epitaxial crystallization of carbon-silicon alloysKramer, K. M. / Thompson, M. O. et al. | 1996
- 4124
-
Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001)Rosenauer, A. / Reisinger, T. / Franzen, F. / Schuetz, G. / Hahn, B. / Wolf, K. / Zweck, J. / Gebhardt, W. et al. | 1996
- 4132
-
Three-dimensional epitaxy: Thermodynamic stability range of coherent germanium nanocrystallites in siliconBalasubramanian, S. / Ceder, G. / Kolenbrander, K. D. et al. | 1996
- 4137
-
Comparative Raman studies of cubic and hexagonal GaN epitaxial layersTabata, A. / Enderlein, R. / Leite, J. R. / Da Silva, S. W. / Galzerani, J. C. / Schikora, D. / Kloidt, M. / Lischka, K. et al. | 1996
- 4141
-
Thermally induced transformations at an ion implanted -Fe~2O~3/-Al~2O~3 interface: A Moessbauer spectroscopy studyBhagwat, S. / Joshi, S. / Ogale, S. B. / Marest, G. / Benyagoub, A. / Moncoffre, N. / Thimon, F. et al. | 1996
- 4146
-
Analysis of oxide-nitride-oxide/Si(111) interfaces by optical second harmonic generation and secondary ion mass spectroscopyWatanabe, K. / Kawata, M. / Hasegawa, E. / Hirayama, H. et al. | 1996
- 4152
-
The trap emptying process of low temperature thermoluminescence of 6H-SiC single crystalsStiasny, T. / Helbig, R. et al. | 1996
- 4157
-
Electron traps in Ca^2^+- or Sr^2^+-doped BaFBr:Eu^2^+ x-ray storage phosphorsSchweizer, S. / Willems, P. / Leblans, P. J. R. / Struye, L. / Spaeth, J.-M. et al. | 1996
- 4166
-
Origin of low frequency noise and 1/f fluctuations of tunneling current in scanning tunneling microscopesSugita, S. / Mera, Y. / Maeda, K. et al. | 1996
- 4174
-
Proximity effects of negative charge groups contact-electrified on thin silicon oxide in airUchihashi, T. / Okusako, T. / Sugawara, Y. / Yamanishi, Y. / Oasa, T. / Morita, S. et al. | 1996
- 4178
-
Conductance modulation of submicrometer metal-oxide-semiconductor field-effect transistors by single-electron trappingMueller, H. H. / Schulz, M. et al. | 1996
- 4187
-
Extraction of slow oxide trap concentration profiles in metal-oxide-semiconductor transistors using the charge pumping methodManeglia, Y. / Bauza, D. et al. | 1996
- 4193
-
Surface structures and electronic states of H~2S-treated InP(001)Shimomura, M. / Naka, K. / Sanada, N. / Suzuki, Y. / Fukuda, Y. / Moeller, P. J. et al. | 1996
- 4197
-
Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlatticesSchrottke, L. / Grahn, H. T. / Fujiwara, K. et al. | 1996
- 4203
-
The influence of a transverse-effective-mass difference on the current at an abrupt heterojunctionSearles, S. / Pulfrey, D. L. et al. | 1996
- 4211
-
On the low resistance Au/Ge/Pd ohmic contact to n-GaAsHao, P. H. / Wang, L. C. / Deng, F. / Lau, S. S. / Cheng, J. Y. et al. | 1996
- 4216
-
Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 CWang, L. C. / Hao, P. H. / Cheng, J. Y. / Deng, F. / Lau, S. S. et al. | 1996
- 4221
-
Numerical modeling of a two-coil apparatus for measuring the magnetic penetration depth in superconducting films and arraysTurneaure, S. J. / Ulm, E. R. / Lemberger, T. R. et al. | 1996
- 4228
-
Temperature scaling of the flux pinning force in Bi~2Sr~2Ca~1Cu~2O~8~+~x thin filmsPrischepa, S. L. / Attanasio, C. / Coccorese, C. / Maritato, L. / Pourtier, F. / Salvato, M. / Kushnir, V. N. et al. | 1996
- 4232
-
Intrinsic broadening of the modulation-related reflections in a high-quality Bi~2Sr~2CaCu~2O~y crystalWu, W. / Zhu, J. / Sun, X. / Zhao, X. / Zhou, G. / Li, X.-G. / Zhang, Y. et al. | 1996
- 4236
-
Effect of annealing on the structure and diamagnetic transition width of high-quality crystal Bi~2Sr~2CaCu~2O~y studied by x-ray-diffraction and ac susceptibility measurementsWu, W. / Zhu, J. / Sun, X. / Zhao, X. / Wang, L. / Zhou, G. / Li, X.-G. / Zhang, Y. et al. | 1996
- 4242
-
Investigation of the stress-dependent magnetic easy axis in steel using magnetic Barkhausen noiseKrause, T. W. / Clapham, L. / Pattantyus, A. / Atherton, D. L. et al. | 1996
- 4253
-
Deuteride absorption and desorption effects on magnetic properties of YFe~2D~xPaul-Boncour, V. / Escorne, M. / Mauger, A. / Latroche, M. / Percheron-Guegan, A. et al. | 1996
- 4260
-
Domain wall jaggedness induced by the random anisotropy orientation in magneto-optic materials: A computer simulation studySeung Kee Han / Yu, S.-C. / Rao, K. V. et al. | 1996
- 4265
-
Moessbauer effect study of face-centered-cubic-like Fe on Cu(001)Keune, W. / Schatz, A. / Ellerbrock, R. D. / Fuest, A. / Wilmers, K. / Brand, R. A. et al. | 1996
- 4273
-
Manifestation of Nb dynamics in Raman, microwave, and infrared spectra of the AgTaO~3-AgNbO~3 mixed systemFortin, W. / Kugel, G. E. / Grigas, J. / Kania, A. et al. | 1996
- 4283
-
A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1-x)Ti(x))O~3 thin films deposited by metallo-organic decomposition technologyZhu, W. / Liu, Z. Q. / Lu, W. / Tse, M. S. / Tan, H. S. / Yao, X. et al. | 1996
- 4291
-
Structural and dielectric studies of Pb(Mg~1~/~3Nb~2~/~3)O~3-PbTiO~3 ferroelectric solid solutions around the morphotropic boundaryNoblanc, O. / Gaucher, P. / Calvarin, G. et al. | 1996
- 4298
-
Growth and structural properties of epitaxial Pb(Zr~xTi~1~-~x)O~3 films and Pb(Zr~xT~1~-~x)O~3-cuprate heterostructuresTriscone, J.-M. / Frauchiger, L. / Decroux, M. / Mieville, L. / Fischer, O. / Beeli, C. / Stadelmann, P. / Racine, G.-A. et al. | 1996
- 4306
-
Effective boundary conditions in optics of thin surface overlayersRashba, E. I. et al. | 1996
- 4312
-
Effect of annealing temperature on optical and structural properties of ion-beam-synthesized semiconducting FeSi~2 layersYang, Z. / Homewood, K. P. et al. | 1996
- 4318
-
Band-edge photoluminescence of CuGaSe~2 films grown by molecular beam epitaxyYamada, A. / Makita, Y. / Niki, S. / Obara, A. / Fons, P. / Shibata, H. / Kawai, M. / Chichibu, S. / Nakanishi, H. et al. | 1996
- 4323
-
Excited-state absorption of Tm^3^+-doped single crystals at photon-avalanche wavelengthsGarnier, N. / Moncorge, R. / Manaa, H. / Descroix, E. / Laporte, P. / Guyot, Y. et al. | 1996
- 4330
-
Trap level characteristics of rare-earth luminescence centers in III-V semiconductorsTaguchi, A. / Takahei, K. et al. | 1996
- 4335
-
Thermal dependence of the refractive index of InP measured with integrated optical demultiplexerGini, E. / Melchior, H. et al. | 1996
- 4338
-
Detailed analysis of room-temperature photoreflectance of strained In~xGa~1~-xAs/Al~yGa~1~-~yAS undoped single quantum wellsHosea, T. J. C. / Lancefield, D. / Garawal, N. S. et al. | 1996
- 4348
-
Spectroscopic study of cobalt-related optical centers in synthetic diamondLawson, S. C. / Kanda, H. / Watanabe, K. / Kiflawi, I. / Sato, Y. / Collins, A. T. et al. | 1996
- 4358
-
Relaxation process for second-order nonlinear optical properties of poled diazo-dye-substituted polymersShuto, Y. / Amano, M. et al. | 1996
- 4368
-
Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAsBacher, G. / Toennies, D. / Eisert, D. / Forchel, A. / Moeller, M. O. / Korn, M. / Jobst, B. / Hommel, D. / Landwehr, G. / Soellner, J. et al. | 1996
- 4373
-
Kinetics of oxidation on hydrogen-terminated Si(100) and (111) surfaces stored in airMiura, T.-A. / Niwano, M. / Shoji, D. / Miyamoto, N. et al. | 1996
- 4381
-
Initial stage of cubic boron nitride film growth from vapor phaseIchiki, T. / Amagi, S. / Yoshida, T. et al. | 1996
- 4388
-
Investigation of bias enhanced nucleation of diamond on siliconGerber, J. / Sattel, S. / Ehrhardt, H. / Robertson, J. / Wurzinger, P. / Pongratz, P. et al. | 1996
- 4397
-
Si(100) etching by translational energy controlled atomic chlorine beamsTeraoka, Y. / Nishiyama, I. et al. | 1996
- 4402
-
Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructureSwain, P. K. / Misra, D. / Thompson, P. E. et al. | 1996
- 4407
-
Characterization of ultraviolet excited Br^*-radical etching of InGaAs/InAlAs material systemHabibi, S. / Tanaka, J. / Hattori, H. / Totsuka, M. / Matsumoto, S. et al. | 1996
- 4414
-
Laser-induced etching of Si surfaces: The effect of weak background lightGrebel, H. / Gayen, T. / Wu, H.-W. et al. | 1996
- 4418
-
Space-charge-limited conduction in Si n^+-i-n^+ homojunction far-infrared detectorsYuan, H. X. / Perera, A. G. U. et al. | 1996
- 4426
-
Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodesRoca, E. / Kyllesbech Larsen, K. / Kolodinski, S. / Mertens, R. et al. | 1996
- 4431
-
On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistorsDimitriadis, C. A. / Tassis, D. H. et al. | 1996
- 4438
-
The effect of an oxygen plasma exposure on the reliability of a Ti/TiN contact metallizationOuellet, L. / Tremblay, Y. / Gagnon, G. / Caron, M. / Currie, J. F. / Gujrathi, S. C. / Biberger, M. / Reynolds, R. et al. | 1996
- 4444
-
Electro-optic switching in spin-coated ferroelectric mesomorphic polymer films and its analysisUto, S. / Moritake, H. / Ozaki, M. / Yoshino, K. / Skarp, K. / Helgee, B. et al. | 1996
- 4450
-
Iron precipitation at oxygen related bulk defects in Czochralski siliconWijaranakula, W. et al. | 1996
- 4453
-
Hydrogen bonding and void microstructure of a-Ge:H filmsMulato, M. / Chambouleyron, I. / Torriani, I. L. et al. | 1996
- 4456
-
Interaction between chromium and oxidized polyphenylquinoxaline surfacesBellard, L. / Fauquet-Ben Ammar, C. / Themlin, J.-M. / Cros, A. et al. | 1996
- 4459
-
Postgrowth annealing effects of TiO~2 thin films grown on InP substrate at low-temperature by metal-organic chemical-vapor depositionEun Kyu Kim / Maeng Ho Son / Min, S.-K. / Han, Y. K. / Wang, C. H. / Yom, S. S. et al. | 1996
- 4462
-
Giant energy product of a two-phase magnet with tabletlike inclusionsLee, C.-M. / Chang, C.-R. et al. | 1996
- 4465
-
Synthesis of nanometer-scale boron phosphide whiskers by vapor-liquid-solid chemical vapor depositionSchroten, E. / Goossens, A. / Schoonman, J. et al. | 1996
- 4468
-
Calculation of a Al-Ti-O-N quaternary isotherm diagram for the prediction of stable phases in TiN/Al alloy contact metallizationCaron, M. / Gagnon, G. / Fortin, V. / Currie, J. F. / Ouellet, L. / Tremblay, Y. / Biberger, M. / Reynolds, R. et al. | 1996
- 4471
-
Submicrometer x-ray beam production by a thin film waveguideLagomarsino, S. / Jark, W. / Di Fonzo, S. / Cedola, A. / Mueller, B. / Engstroem, P. / Riekel, C. et al. | 1996