Electroluminescent ZnS:Mn films prepared at 220-450 C using complex compounds with sulphur-containing ligands (English)
- New search for: Bessergenev, V. G.
- New search for: Belyi, V. I.
- New search for: Rastorguev, A. A.
- New search for: Ivanova, E. N.
- New search for: Kovalevskaya, Y. A.
- New search for: Larionov, S. V.
- New search for: Zemskova, S. M.
- New search for: Kirichenko, V. N.
- New search for: Nadolinnyi, V. A.
- New search for: Gromilov, S. A.
- New search for: Bessergenev, V. G.
- New search for: Belyi, V. I.
- New search for: Rastorguev, A. A.
- New search for: Ivanova, E. N.
- New search for: Kovalevskaya, Y. A.
- New search for: Larionov, S. V.
- New search for: Zemskova, S. M.
- New search for: Kirichenko, V. N.
- New search for: Nadolinnyi, V. A.
- New search for: Gromilov, S. A.
In:
THIN SOLID FILMS
;
279
, 1/2
;
135-139
;
1996
-
ISSN:
- Article (Journal) / Print
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Title:Electroluminescent ZnS:Mn films prepared at 220-450 C using complex compounds with sulphur-containing ligands
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Contributors:Bessergenev, V. G. ( author ) / Belyi, V. I. ( author ) / Rastorguev, A. A. ( author ) / Ivanova, E. N. ( author ) / Kovalevskaya, Y. A. ( author ) / Larionov, S. V. ( author ) / Zemskova, S. M. ( author ) / Kirichenko, V. N. ( author ) / Nadolinnyi, V. A. ( author ) / Gromilov, S. A. ( author )
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Published in:THIN SOLID FILMS ; 279, 1/2 ; 135-139
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Publisher:
- New search for: ELSEVIER SEQUOIA SA
-
Publication date:1996-01-01
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Size:5 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 530.4275
- Further information on Dewey Decimal Classification
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Classification:
DDC: 530.4275 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 279, Issue 1/2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Characterization of the oxidized indium thin films with thermal oxidationLee, M.-S. et al. | 1996
- 4
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Synthesis of a novel phase in a Fe-Cr alloy grown by ion assisted co-sputter depositionSimmonds, M.C. et al. | 1996
- 7
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Characterization of pit morphology of sputtered Al-1wt.%Si-0.5wt.%Cu alloy thin filmOrr, S.-J. et al. | 1996
- 7
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Characterization of pit morphology of sputtered A1-1wt.% Si-0.5wt.%Cu alloy thin filmOrr, S.-J. / Pyun, S.-I. / Nam, S.-W. et al. | 1996
- 11
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Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressuresYoon, S.F. et al. | 1996
- 14
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Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiationKang, T.W. et al. | 1996
- 17
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C-axis orientation of AlN films prepared by ECR PECVDSoh, J.-W. et al. | 1996
- 23
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Microstructural characterization of gold-doped silica-titania sol-gel filmsInnocenzi, P. et al. | 1996
- 29
-
The Neel temperature of -Mn thin filmsBoakye, F. / Adanu, K. G. et al. | 1996
- 29
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The Néel temperature of a-Mn thin filmsBoakye, F. et al. | 1996
- 34
-
Preparation and characterization of carbon nitride thin filmsWan, L. et al. | 1996
- 43
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Chemical etching of ion beam deposited AlN and AlN:HHuang, L. et al. | 1996
- 43
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Chemical etching of ion beam deposited A1N and A1N:HHuang, L. / Wang, X.-D. / Hipps, K. W. / Mazur, U. / Heffron, R. / Dickinson, J. T. et al. | 1996
- 49
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Magnetron facing target sputtering system for fabricating single-crystal filmsLin, C. et al. | 1996
- 53
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Quantitative X-ray diffraction analysis of surface layers by computed depth profilingLuo, J. et al. | 1996
- 59
-
Local range order in thin dielectric films of gallium phosphateTourtin, F. et al. | 1996
- 66
-
Supercritical fluid chemical deposition of thin InP films. A new approach and precursorsPopov, V.K. et al. | 1996
- 70
-
Influence of thermal treatment on the properties of Ca-modified lead titanate thin filmsCarmona, F. et al. | 1996
- 75
-
Metastable TiSixNyOz films of B1-type structure prepared by the arc processKuznetsov, M.V. et al. | 1996
- 82
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Improved gap-filling capability of fluorine-doped PECVD silicon oxide thin filmsMizuno, S. et al. | 1996
- 87
-
Adsorption of oriented methyl pyridinium porphyrins on solid substratesWienke, J. et al. | 1996
- 93
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Electrical characteristics of diamond films diffused using Li saltsPopovici, G. et al. | 1996
- 98
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An investigation of doping of SnO2 by ion implantation and application of ion-implanted films as gas sensorsRastomjee, C.S. et al. | 1996
- 106
-
Electron diffraction studies of epitaxial C60 thin films on mica(001)Lindner, J.K.N. et al. | 1996
- 110
-
Surface characterization of diamond films polished by thermomechanical polishing methodChoi, S.K. et al. | 1996
- 115
-
Chemical vapour deposition and characterization of gallium oxide thin filmsBattiston, G.A. et al. | 1996
- 119
-
An interference method for the determination of thin film anisotropySurdutovich, G.I. et al. | 1996
- 124
-
Monolayer thickness in atomic layer depositionYlilammi, M. et al. | 1996
- 131
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Properties of indium tin oxide films with indium tin modulation layers prepared by nano-scale controlled reactive magnetron sputteringZahirul Alam, A.H.M. et al. | 1996
- 135
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Electroluminescent ZnS:Mn films prepared at 220-450 (degree)C using complex compounds with sulphur-containing ligandsBessergenev, V.G. et al. | 1996
- 135
-
Electroluminescent ZnS:Mn films prepared at 220-450 C using complex compounds with sulphur-containing ligandsBessergenev, V. G. / Belyi, V. I. / Rastorguev, A. A. / Ivanova, E. N. / Kovalevskaya, Y. A. / Larionov, S. V. / Zemskova, S. M. / Kirichenko, V. N. / Nadolinnyi, V. A. / Gromilov, S. A. et al. | 1996
- 140
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Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr-Ti ratioKim, Y.-M. et al. | 1996
- 145
-
Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin filmsBoukezzata, M. et al. | 1996
- 155
-
Microstructure of thin iron carbide films prepared in a glow dischargeSiriwardane, H. et al. | 1996
- 162
-
The optical dielectric function of amorphous carbon filmsParker, W.G. et al. | 1996
- 166
-
Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si-SiGe-Ge buffer layerWoo, Y.D. et al. | 1996
- 169
-
Adhesion behavior of PVD coatings on ECR plasma and ion beam treated polymer filmsMilde, F. et al. | 1996
- 174
-
Thickness change in an annealed amorphous silicon film detected by spectroscopic ellipsometryYamaguchi, T. et al. | 1996
- 180
-
Epitaxial growth of Co-Cu(001) superlattices on sapphire substratesDi Nunzio, S. et al. | 1996
- 189
-
Charge transfer and electronic subband studies in a strained In0.15Ga0.85As-Al0.22Ga0.78As single quantum wellKim, T.W. et al. | 1996
- 193
-
Activation energy for Ni2Si and NiSi formation measured over a wide range of ramp ratesColgan, E.G. et al. | 1996
- 199
-
Frequency-dependent conductivity in As0.40 Se 0.40)Te0.20 thin filmsEsme, I. et al. | 1996
- 204
-
Optical properties of amorphous thin films of the Zn-P systemJarzabek, B. et al. | 1996
- 209
-
New technique of measurement of optical parameters of thin filmsHlávka, J. et al. | 1996
- 213
-
Electrical and optical properties of ZnO:Al films prepared by an evaporation methodMa, J. et al. | 1996
- 216
-
Search for giant magnetic moments in ion-beam-synthesized a"-Fe16N2Weber, T. et al. | 1996
- 216
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Search for giant magnetic moments in ion-beam-synthesized "-Fe~l~6N~2Weber, T. / De Wit, L. / Saris, F. W. / Schaaf, P. et al. | 1996
- 221
-
Structure and polymerisation behaviour of cadmium 10,12-pentacosadiynoate Langmuir-Blodgett filmsDhanabalan, A. et al. | 1996
- 228
-
Irregular mixed-layer structure of Ba-behenate multibilayer filmIvanova, T.I. et al. | 1996
- 233
-
Stability improvement of optochemical sol-gel film sensors by immobilisation of dye-labeled dextransPlaschke, M. et al. | 1996
- 236
-
Electropolymerization of pyrrole on PbO2-SnO2-Ti substrateHwang, B.J. et al. | 1996
- 242
-
The electrical properties of CdTe films of different preparation conditions in correlation with microstructure changesAshour, A. et al. | 1996
- 248
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Precisions on reaction monitoring from in-situ resistance measurements: Relations between such measurements and actual reaction kineticsZhang, S.-L. et al. | 1996