Finite-element modeling of nanoindentation for determining the mechanical properties of implanted layers and thin films (English)
- New search for: Knapp, J. A.
- New search for: Follstaedt, D. M.
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- New search for: Myers, S. M.
- New search for: Knapp, J. A.
- New search for: Follstaedt, D. M.
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Proceedings of the 10th Int. Conf. on Ion Beam Modification of Materials
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935-939
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1997
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ISSN:
- Article (Journal) / Print
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Title:Finite-element modeling of nanoindentation for determining the mechanical properties of implanted layers and thin films
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Contributors:Knapp, J. A. ( author ) / Follstaedt, D. M. ( author ) / Barbour, J. C. ( author ) / Myers, S. M. ( author )
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Published in:Proceedings of the 10th Int. Conf. on Ion Beam Modification of Materials , complete ; 935-939NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B ; 127/128, complete ; 935-939
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Publication date:1997-01-01
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Size:5 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 127/128, Issue complete
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Fundamental aspects of defect production in solidsAverback, R. S. / Ghaly, M. et al. | 1997
- 12
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Shape instability of amorphous materials during high-energy ion bombardmentGutzmann, A. / Klaumuenzer, S. et al. | 1997
- 18
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The role of dose and position on the concentration of residual point defects in as-implanted wafersPrussin, S. / Holland, O. W. et al. | 1997
- 22
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Interstitial trapping efficiency of C^+ implanted into preamorphised silicon - control of EOR defectsCristiano, F. / Bonafos, C. / Nejim, A. / Lombardo, S. / Omri, M. / Alquier, D. / Martinez, A. / Campisano, S. U. / Hemment, P. L. F. / Claverie, A. et al. | 1997
- 27
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Bound vacancy interstitial pairs in irradiated siliconZillgen, H. / Ehrhart, P. et al. | 1997
- 32
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In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ionsBiro, L. P. / Gyulai, J. / Havancsak, K. / Didyk, A. Y. / Frey, L. / Ryssel, H. et al. | 1997
- 38
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Behaviour of radiation defects under the influence of mechanical strain in ion-implanted siliconSuprun-Belevich, Y. / Palmetshofer, L. et al. | 1997
- 43
-
Reduction of stresses in thin films by high energy ion beamsJain, A. / Loganathan, S. / Jain, U. et al. | 1997
- 46
-
Interactions of high-energy Si, Zn and Ga ions with dislocations in GaAs on SiTamura, M. et al. | 1997
- 51
-
Self- and impurity-ion beam mixing in molecular beam epitaxy-grown Ga(Al)As and Cd(Mn)Te structuresBarcz, A. / Reginski, K. / Sadlo, M. / Karczewski, G. / Kossut, J. et al. | 1997
- 55
-
The effect of oxygen on secondary defect formation in McV self-implanted siliconBrown, R. A. / Kononchuk, O. / Radzimski, Z. / Rozgonyi, G. A. / Gonzalez, F. et al. | 1997
- 59
-
The effect of particle fluence and flux in alpha-irradiated siliconDesgardin, P. / Henry, L. / Ntsoenzok, E. / Blondiaux, G. / Barbot, J. F. / Blanchard, C. et al. | 1997
- 63
-
Hydrogenation of amorphous silicon prepared by ion implantationHiroyama, Y. / Motooka, T. / Suzuki, R. / Hirano, Y. / Sato, F. et al. | 1997
- 69
-
Annealing studies of point defects in low dose MeV ion implanted siliconLalita, J. / Svensson, B. G. / Jagadish, C. / Hallen, A. et al. | 1997
- 74
-
Redistribution of implanted impurities in dual As^+ and B ^+ implanted silicon during annealingYokota, K. / Nakamura, T. / Kitagawa, T. / Miyashita, F. / Hirai, K. / Takano, H. / Kumagai, M. et al. | 1997
- 78
-
Evaluation of micro-defects by DRAM data retention characteristics measurementMiyoshi, K. / Terashima, K. / Muramatsu, Y. / Nishio, N. / Murotani, T. / Saito, S. et al. | 1997
- 82
-
Influences of ion species (Ge^+, Sb^+,Au^2^+) on crystallization of amorphous Ge films induced by high energy ion irradiationNakao, S. / Saitoh, K. / Ikeyama, M. / Niwa, H. / Tanemura, S. / Miyagawa, Y. / Miyagawa, S. et al. | 1997
- 86
-
Annealing of defects induced by Ge irradiation of silica probed with variable energy positronsKnights, A. P. / Allard, L. B. / Brebner, J. L. / Simpson, P. J. et al. | 1997
- 90
-
The production and stability of implantation-induced vacancy excesses in siliconEllingboe, S. L. / Ridgway, M. C. et al. | 1997
- 94
-
Extended defect formation and the flux of interstitials in Si-ion implanted siliconSimpson, T. W. / Mitchell, I. V. et al. | 1997
- 98
-
TEM observation of FIB induced damages in Ni~2Si/Si thin filmsTanaka, M. / Furuya, K. / Saito, T. et al. | 1997
- 102
-
Composition changes in N~2^+ bombarded Ti/Si bilayers and multilayers: interplay between random and chemically guided effectsBonelli, M. / Kelly, R. / Miotello, A. / Calliari, L. et al. | 1997
- 107
-
Electronic stopping power of ^1^0B channeled into the Si <100> axial directionDos Santos, J. H. R. / Grande, P. L. / Boudinov, H. / Behar, M. / Stoll, R. / Klatt, C. / Kalbitzer, S. et al. | 1997
- 112
-
Angular dependence of defects introduced in GaAs by alpha-particle bombardmentAuret, F. D. / Hayes, M. / Deenapanray, P. N. K. / Ridgway, M. et al. | 1997
- 115
-
Sputtering of III-V semiconductors under argon atom and ion bombardmentSoshnikov, I. P. / Kudriavtsev, Y. A. / Lunev, A. V. / Bert, N. A. et al. | 1997
- 119
-
Instability of irradiation induced defects in nanostructured materialsRose, M. / Balogh, A. G. / Hahn, H. et al. | 1997
- 123
-
HRTEM analysis of solid precipitates in Xe-implanted aluminumIshikawa, N. / Awaji, M. / Furuya, K. / Birtcher, R. C. / Allen, C. W. et al. | 1997
- 127
-
Ion irradiation-induced phase transformation in Al-Cu-Co-Ge decagonal quasicrystalChen, L. F. / Wang, L. M. / Guo, Y. X. / Ewing, R. C. et al. | 1997
- 132
-
Depth dependence of electrical resistivity transformations by ion beamsMiranda, R. M. N. / Vasconcellos, M. A. Z. / Baibich, M. N. / Borges da Costa, J. A. T. et al. | 1997
- 137
-
In-situ studies of phase formation and transformation in carbon ion implanted iron: Investigation of electrical resistivityKoeniger, A. / Hammerl, C. / Wenzel, A. / Stritzker, B. / Rauschenbach, B. et al. | 1997
- 141
-
Ion-beam mixing - does it depend on the substrate thickness?Kopcewicz, M. / Jagielski, J. / Grabias, A. / Stobiecki, F. / Szymanski, B. et al. | 1997
- 145
-
Amorphous alloys formed by ion mixing or solid-state reaction in immiscible Y-refractory metal systems and their elastic propertiesChen, Y. G. / Liu, B. X. et al. | 1997
- 149
-
CEMS and TEM investigations of iron implanted with nitrogenTerwagne, G. / D'Haen, J. et al. | 1997
- 153
-
Long-range effect at low-dose ion and electron irradiation of metalsTetelbaum, D. I. / Kurilchik, E. V. / Latisheva, N. D. et al. | 1997
- 157
-
Li enrichment of LiF surfaces bombarded by MeV nitrogen ion beamsPereira, J. A. M. / Da Silveira, E. F. et al. | 1997
- 160
-
Ion-beam-induced amorphization of LaPO~4 and ScPO~4Meldrum, A. / Boatner, L. A. / Wang, L. M. / Ewing, R. C. et al. | 1997
- 166
-
Crystallinity improvement of epitaxial CeO~2 films by high-energy ion irradiationSatoh, M. / Yamamoto, Y. / Inoue, T. et al. | 1997
- 170
-
Amorphization in aluminum oxide induced by ion irradiationAbe, H. / Yamamoto, S. / Naramoto, H. et al. | 1997
- 176
-
Formation and growth process of defect clusters in magnesia under ion irradiationSonoda, T. / Abe, H. / Kinoshita, C. / Naramoto, H. et al. | 1997
- 181
-
Ion irradiation and annealing effects in Al~2O~3 and MgAL~2O~4Furuno, S. / Sasajima, N. / Hojou, K. / Izui, K. / Otsu, H. / Muromura, T. / Matsui, T. et al. | 1997
- 186
-
Amorphization of Al~2SiO~5 polymorphs under ion beam irradiationWang, S. X. / Wang, L. M. / Ewing, R. C. et al. | 1997
- 191
-
In situ and ex situ investigation of ion-beam-induced amorphization in -SiCWeber, W. J. / Yu, N. et al. | 1997
- 195
-
Amorphization and solid phase epitaxy of high-energy ion implanted 6H-SiCIshimaru, M. / Harada, S. / Motooka, T. / Nakata, T. / Yoneda, T. / Inoue, M. et al. | 1997
- 198
-
Ion beam induced modifications in dc sputtered TiN/B-C-N multilayersFayeulle, S. / Torri, P. / Nastasi, M. / Lu, Y.-C. / Kung, H. / Tesmer, J. R. et al. | 1997
- 203
-
Isotope effect between hydrogen and deuterium ion irradiation on titanium carbide (TiC) at low temperatureHojou, K. / Otsu, H. / Furuno, S. / Sasajima, N. / Izui, K. et al. | 1997
- 208
-
Effects of bombarded ion mass on electrical resistivity and wettability of carbon filmsIwaki, M. / Suzuki, Y. / Nakao, A. / Watanabe, H. et al. | 1997
- 212
-
Hydrogen mobility in diamond studies using HI-ERDA microscopyMachi, I. Z. / Connell, S. H. / Schaaff, P. / Doyle, B. P. / Maclear, R. D. / Bharuth-Ram, K. / Formenti, P. / Sellchop, J. P. F. et al. | 1997
- 217
-
Defects in ion implanted diamond films (ESR study)Show, Y. / Izumi, T. / Deguchi, M. / Kitabatake, M. / Hirao, T. / Morid, Y. / Hatta, A. / Ito, T. / Hiraki, A. et al. | 1997
- 221
-
Behavior of point radiation defects during rapid photon annealing of GaAs layers implanted with various doses of Si and Se ionsBublik, V. T. / Evgen'ev, S. B. / Kalinin, A. A. / Milvidski, M. G. / Nemirovski, A. W. et al. | 1997
- 225
-
Monte Carlo simulations of ion-enhanced island coarseningChason, E. / Kellerman, B. K. et al. | 1997
- 230
-
Simulations of roughening of amorphous carbon surfaces bombarded by low-energy Ar-ionsKoponen, I. / Hautala, M. / Sievaenen, O.-P. et al. | 1997
- 235
-
A theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migrationCargnoni, F. / Colombo, L. / Gatti, C. et al. | 1997
- 239
-
MD-simulation of ion induced crystallization and amorphization processes in siliconWeber, B. / Gaertner, K. / Stock, D. M. et al. | 1997
- 244
-
Molecular dynamics simulations for amorphous/crystalline Si interface: Amorphization and crystallization induced by simple defectsMotooka, T. et al. | 1997
- 248
-
The two-dimensional profiling of light ions into crystalNakagawa, S. T. / Saito, H. / Thome, L. / Clerc, C. et al. | 1997
- 256
-
Theoretical model of diffusion of lithium and boron implanted in diamondGadiyak, G. et al. | 1997
- 260
-
Computer simulation of SiC and B~4C sputtering by Ar^+ and He^+ ions bombardmentPugacheva, T. S. / Jurabekova, F. G. / Miyagawa, Y. / Valiev, S. K. et al. | 1997
- 265
-
The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantationValiev, S. H. / Pugacheva, T. S. / Jurabekova, F. G. / Lem, S. A. / Miyagawa, Y. et al. | 1997
- 269
-
Simulation of cluster impacts on silicon surfaceInsepov, Z. / Sosnowski, M. / Yamada, I. et al. | 1997
- 273
-
Ion-beam assisted deposition of thin molybdenum films studied by molecular dynamics simulationRobbemond, A. / Thijsse, B. J. et al. | 1997
- 278
-
Slightly negative surface potential and charging model of insulator in the negative-ion implantationTsuji, H. / Ishikawa, J. / Ikeda, S. / Gotoh, Y. et al. | 1997
- 282
-
Study on emission yields of negative- and positive-ion induced secondary electron from thin SiO~2 filmIshikawa, J. / Tsuji, H. / Ikeda, S. / Gotoh, Y. et al. | 1997
- 286
-
Computer simulation of ion sputtering of polyatomic multilayered targetsBer, B. J. / Kharlamov, V. S. / Kudrjavtsev, Y. A. / Merkulov, A. V. / Trushin, Y. V. / Zhurkin, E. E. et al. | 1997
- 291
-
Metal gettering by boron-silicide precipitates in boron-implanted siliconMyers, S. M. / Petersen, G. A. / Headley, T. J. / Michael, J. R. / Aselage, T. L. / Seager, C. H. et al. | 1997
- 297
-
Gettering of platinum and silver to cavities formed by hydrogen implantation in siliconKinomura, A. / Williams, J. S. / Wong-Leung, J. / Petravic, M. et al. | 1997
- 301
-
Gettering of transition metals by cavities in silicon formed by helium ion implantationPetersen, G. A. / Myers, S. M. / Follstaedt, D. M. et al. | 1997
- 307
-
Trapping of ion-implanted ^5^7Co to cavities in c-Si: a qualitative studyDeweerd, W. / Moons, R. / Milants, K. / Verheyden, J. / Langouche, G. / Pattyn, H. et al. | 1997
- 311
-
Channeled ion beam synthesis of erbium silicide: comparison of experimental studies and binary collision simulationsWahl, U. / Vantomme, A. / Wu, M. F. / Pattyn, H. / Langouche, G. et al. | 1997
- 316
-
Influence of the ion irradiation on the properties of -FeSi~2 layers prepared by ion beam assisted depositionBarradas, N. P. / Panknin, D. / Wieser, E. / Schmidt, B. / Betzl, M. / Muecklich, A. / Skorupa, W. et al. | 1997
- 321
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Effect of ion current density on the phase composition of ion beam synthesized iron silicides in Si (100)Gumarov, G. G. / Petukhov, V. Y. / Shustov, V. A. / Khaibullin, I. B. et al. | 1997
- 324
-
Formation of ternary Co~1~-~xPd~xSi~2 on Si (100) by Pd ion implantation in CoSi~2/Si (100) heterostructuresTisch, U. / Hollaender, B. / Hacke, M. / Mesters, S. / Michelsen, W. / Guggi, D. / Mantl, S. / Kabius, B. et al. | 1997
- 328
-
Thermal evolution of ion beam synthesised CoSi~2 layers in Si~0~.~6~4Ge~0~.~3~6 alloyCurello, G. / Gwilliam, R. / Harry, M. / Sealy, B. J. / Rodriguez, T. et al. | 1997
- 333
-
Ion beam synthesis of SiC layers in SIMOX materialGoetz, B. / Lindner, J. K. N. / Stritzker, B. et al. | 1997
- 337
-
Synthesis and characterization of hydrogenated amorphous silicon-carbon films with blue-green emissionYu, Y. / Wu, Z. / Ren, Z. / Liu, X. / Zou, S. / Wong, S. P. / Wilson, I. H. et al. | 1997
- 341
-
Annealing studies of B^+ implanted 6H-SiC by RBS and optical sub-gap spectroscopyWendler, E. / Heft, A. / Wesch, W. / Peiter, G. / Dunken, H. H. et al. | 1997
- 347
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Defect characterization in high temperature implanted 6H-SiC using TEMSuvorov, A. V. / Lebedev, O. I. / Suvorova, A. A. / Van Landuyt, J. / Usov, I. O. et al. | 1997
- 350
-
Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si~1~-~xC~x layers in Si fabricated by C ion implantationKobayashi, N. / Zhu, D. H. / Hasegawa, M. / Katsumata, H. / Tanaka, Y. / Hayashi, N. / Makita, Y. / Shibata, H. / Uekusa, S. et al. | 1997
- 355
-
Ion beam modification of Si/Sic/Si layer systemsVolz, K. / Lindner, J. K. N. / Stritzker, B. et al. | 1997
- 360
-
Optical transient in ion irradiated silicon carbideMusumeci, P. / Grimaldi, M. G. / Calcagno, L. / Roccaforte, F. / Foti, G. et al. | 1997
- 364
-
Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidationNiimi, H. / Koh, K. / Lucovsky, G. et al. | 1997
- 369
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Synthesis of silicon oxynitride by ion beam sputtering and the effects of nitrogen ion-assisted bombardmentLambrinos, M. F. / Valizadeh, R. / Colligon, J. S. et al. | 1997
- 375
-
Interaction of cavities with misfit dislocations in SiGe/Si heterostructuresFollstaedt, D. M. / Myers, S. M. / Floro, J. A. / Lee, S. R. et al. | 1997
- 379
-
Ion channeling study of cavities in silicon formed by He implantationMoons, R. / Deweerd, W. / Pattyn, H. / Vantomme, A. / Langouche, G. et al. | 1997
- 383
-
Irradiation effects of high energy heavy ions on the switching characteristics of p-n junction diodesBhave, P. S. / Bhoraskar, V. N. et al. | 1997
- 388
-
Charge carrier lifetime modification in silicon by high energy H^+ or H^+ ion implantationKhanh, N. Q. / Tuetto, P. / Buiu, O. / Jaroli, E. N. / Biro, L. P. / Manuaba, A. / Gyulai, J. et al. | 1997
- 393
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Electronic properties of defects created in epitaxially grown n-Si by low energy He and Ar ionsAuret, F. D. / Deenapanray, P. N. K. / Goodman, S. A. / Malherbe, J. B. / Meyer, W. E. / Myburg, G. / Hayes, M. et al. | 1997
- 397
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The effect of ion irradiation on the thermal stability of GeSi/Si strained-layer heterostructuresGlasko, J. M. / Elliman, R. G. / Fitz Gerald, J. D. / Kringhoej, P. et al. | 1997
- 401
-
Compositional effects on the radiation damage of 2 MeV Si ion implanted relaxed Si~1~-~xGe~x alloysLindner, J. K. N. et al. | 1997
- 406
-
Low energy BF~2 implantation for the suppression of B penetrationMineji, A. / Hamada, K. / Hayashi, T. / Saito, S. et al. | 1997
- 410
-
Improved lifetime characteristics in heavy ion irradiated siliconKeskitalo, N. / Hallen, A. / Josyula, L. / Svensson, B. G. et al. | 1997
- 414
-
Flicker noise in ion-implanted silicon structuresMakoviychuk, M. I. / Parshin, E. O. / Rekshinskii, V. A. et al. | 1997
- 418
-
Ion beam intermixing of semiconductor heterostructures for optoelectronic applicationsGoldberg, R. D. / Mitchell, I. V. / Poole, P. / Labrie, D. / Lafontaine, H. / Aers, G. C. / Williams, R. / Dion, M. / Charbonneau, S. / Ramanujancha, K. et al. | 1997
- 423
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Solid-phase epitaxial growth of amorphised GaAs in the presence of implantation-induced microscopic non-stoichiometryRidgway, M. C. / Belay, K. B. / Llewellyn, D. J. / Claverie, A. et al. | 1997
- 428
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Modification of semiconductor laser diodes by focused ion beam millingMusil, C. R. / Patterson, B. D. / Auderset, H. et al. | 1997
- 433
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Electrical and optical characterization of Cd^+ and P^+ dually ion-implanted GaAsShen, H. L. / Fang, X. H. / Jiang, D. S. / Makita, Y. / Kimura, S. / Obara, A. / Shima, T. / Iida, T. / Kotani, M. / Kobayashi, N. et al. | 1997
- 437
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Optical characterization of low-energy nitrogen-ion doped GaAsShima, T. / Makita, Y. / Kimura, S. / Iida, T. / Sanpei, H. / Yamaguchi, M. / Kudo, K. / Tanaka, K. / Kobayashi, N. / Sandhu, A. et al. | 1997
- 442
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Optical changes induced in GaAs/AlGaAs waveguides by MeV ion bombardmentTaylor, T. / Ila, D. / Zimmerman, R. L. / Ashley, P. R. / Poker, D. B. / Hensley, D. K. et al. | 1997
- 446
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Distribution of impurities implanted in InSb and InAs before and after annealingGerasimenko, N. N. / Kuryshev, G. L. / Myasnikov, A. M. / Obodnikov, V. I. / Verner, I. V. et al. | 1997
- 451
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Correlation of electrical and optical properties in dually Cd^+ and N^+ ion-implanted GaAsKotani, M. / Makita, Y. / Kawasumi, Y. / Kimura, S. / Jiang, D. S. / Shima, T. / Iida, T. / Kobayashi, N. / Tsukamoto, T. / Koura, N. et al. | 1997
- 456
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Effect on the excess P element in P-ion-implanted semi-insulating Fe-doped InPKuriyama, K. / Satoh, S. / Sakai, K. / Yokoyama, K. et al. | 1997
- 459
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Investigation of the annealing behavior of damage in Si implanted InP by photoacoustic and Raman spectroscopyKuwahata, H. / Uehara, F. / Matsumori, T. / Muto, N. et al. | 1997
- 463
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Ion implantation of epitaxial GaN films: damage, doping and activationParikh, N. / Suvkhanov, A. / Lioubtchenko, M. / Carlson, E. / Bremser, M. / Bray, D. / Davis, R. / Hunn, J. et al. | 1997
- 467
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High dose Si- and Mg-implantation in GaN: Electrical and structural analysisZolper, J. C. / Crawford, M. H. / Williams, J. S. / Tan, H. H. / Stall, R. A. et al. | 1997
- 471
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Peculiarities of carrier recombination in Cd~xHg~1~-~xTe implanted consecutively with Ag^+ (Cu^+) and Xe^+ ionsIbragimova, M. I. / Baryshev, N. S. / Petukhov, V. Y. / Khaibullin, I. B. et al. | 1997
- 475
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Optical centers and oxygen in Er-ion implanted siliconNakashima, K. / Eryu, O. / Iioka, O. / Nakata, T. / Watanabe, M. et al. | 1997
- 479
-
Donor activity of ion-implanted erbium in siliconPalmetshofer, L. / Suprun-Belevich, Y. / Stepikhova, M. et al. | 1997
- 483
-
Investigation of Er-implanted KTiOPO~4 crystalsOpfermann, T. / Bachmann, T. / Lux, E. / Wesch, W. et al. | 1997
- 488
-
Ion beam induced luminescence of Tb-implanted sapphireIwaki, M. / Kumagai, M. / Aono, K. et al. | 1997
- 492
-
Photosensitivity of B, Si and N implanted silicaMagruder, R. H. / Zuhr, R. A. / Hensley, D. K. / Withrow, S. et al. | 1997
- 497
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Proton-induced changes of optical properties and defect formation in quartz glassesGulamova, R. R. / Gasanov, E. M. / Alimov, R. et al. | 1997
- 503
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Si-ion implantation-induced luminescence from Si single crystals with a SiO~2 overlayerLan, A. D. / Bai, X. D. / Liu, B. X. et al. | 1997
- 507
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Ion beam enhanced chemical etching of Nd: YAG for optical waveguidesNunn, P. J. T. / Olivares, J. / Spadoni, L. / Townsend, P. D. / Hole, D. E. / Luff, B. J. et al. | 1997
- 512
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Loss measurements and stoichiometric dependence of Ti and O implanted LiNbO~3 waveguidesWilliams, E. K. / Ila, D. / Sarkisov, S. / Venkateswarlu, P. / Poker, D. B. / Hensley, D. K. et al. | 1997
- 515
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Themal annealing of Ar ion bombarded lithium tantalate (LiTaO~3) single crystalZhang, Z. / Rusakova, I. A. / Wilson, J. / Chu, R. / Chu, W. K. et al. | 1997
- 520
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Valence effect on the incorporation of tungsten implanted into lithium niobateKling, A. / Marques, J. G. / Soares, J. C. / Da Silva, M. F. / Dieguez, E. / Agullo-Lopez, F. et al. | 1997
- 524
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MeV silver ion implantation induced changes in optical properties of MgO (100)Qian, Y. / Ila, D. / Zimmerman, R. L. / Poker, D. B. / Boatner, L. A. / Hensley, D. K. et al. | 1997
- 528
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Cr: LiSrAlF~6 optical waveguides defined by ion beam implantationChandler, P. J. / Huang, X. / Townsend, P. D. / Hamelin, N. / Chow, Y. T. et al. | 1997
- 533
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Ion-implanted lanthanum fluoride waveguidesHuang, X. / Chandler, P. J. / Townsend, P. D. / Rutt, H. et al. | 1997
- 537
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Excitation mechanisms of electro- and photo-luminescence of Er^3^+ in Er-implanted SiUekusa, S. / Awahara, K. / Shimadzu, K. / Kumagai, M. et al. | 1997
- 541
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Influence of impurities (nitrogen, oxygen) on Er-related emission in gallium phosphideUekusa, S. / Yano, Y. / Fukaya, K. / Kumagai, M. et al. | 1997
- 545
-
Encapsulated nanocrystals and quantum clots formed by ion beam synthesisWhite, C. W. / Budai, J. D. / Withrow, S. P. / Zhu, J. G. / Pennycook, S. J. / Zuhr, R. A. / Hembree, D. M. / Henderson, D. O. / Magruder, R. H. / Yacaman, M. J. et al. | 1997
- 553
-
Optically active surfaces formed by ion implantation and thermal treatmentGea, L. A. / Boatner, L. A. / Evans, H. M. / Zuhr, R. et al. | 1997
- 557
-
Ion-beam-assisted deposition of Au nanocluster/Nb~20~5 thin films with nonlinear optical propertiesCotell, C. M. / Schiestel, S. / Carosella, C. A. / Flom, S. / Hubler, G. K. / Knies, D. L. et al. | 1997
- 562
-
Low-mass ion irradiation of glass waveguides for Cu quantum-dots formationGonella, F. / Knystautas, E. J. / Mattei, G. / Mazzoldi, P. / Meneghini, C. / Cattaruzza, E. / Garrido, F. / Osborne, D. H. et al. | 1997
- 566
-
Ion beam assisted deposition of metal nanoclusters in silica thin filmsSchiestel, S. / Cotell, C. M. / Caroselta, C. A. / Grabowski, K. S. / Hubler, G. K. et al. | 1997
- 570
-
Post bombardment enhanced optical absorption in gold implanted silicaIla, D. / Wu, Z. / Smith, C. C. / Poker, D. B. / Hensley, D. K. / Klatt, C. / Kalbitzer, S. et al. | 1997
- 574
-
Ion-beam mixing of metal-insulator multilayers: a promising technique for the formation of metallic nanophasesRizza, G. / Garrido, F. / Pivin, J. C. / Dran, J. C. / Thome, L. / Gusso, M. / Tapfer, L. / Quaranta, A. / Colombo, P. et al. | 1997
- 579
-
Negative copper ion implantation into silica glasses at high dose rates and the optical measurementsKishimoto, N. / Gritsyna, V. T. / Kono, K. / Amekura, H. / Saito, T. et al. | 1997
- 583
-
Annealing effects in light-emitting Si nanostructures formed in SiO~2 by ion implantation and transient preheatingKachurin, G. A. / Zhuravlev, K. S. / Pazdnikov, N. A. / Leier, A. F. / Tyschenko, I. E. / Volodin, V. A. / Skorupa, W. / Yankov, R. A. et al. | 1997
- 587
-
Strongly enhanced vortex pinning in high-energy, heavy-ion-irradiated, superconducting Tl-Ba-Ca-Cu-O filmsVenturini, E. L. / Newcomer, P. P. / Schoene, H. / Doyle, B. L. / Myers, K. E. et al. | 1997
- 591
-
In situ study of ion-beam induced lattice damage in calcium fluoride crystalsYu, N. / Nastasi, M. / Sickafus, K. E. / Yasuda, K. / Tesmer, J. R. et al. | 1997
- 596
-
Etching of amorphous Al~2O~3 produced by ion implantationMcHargue, C. J. / Hunn, J. D. / Joslin, D. L. / Alves, E. / Da Silva, M. F. / Soares, J. C. et al. | 1997
- 599
-
Comparison of damage growth and recovery in -Al~2O~3 implanted with vanadium ionsNaramoto, H. / Aoki, Y. / Yamamoto, S. / Abe, H. et al. | 1997
- 603
-
Modification of single-crystal sapphire by ion implantationDemaree, J. D. / Kirkpatrick, S. R. / Kirkpatrick, A. R. / Hirvonen, J. K. et al. | 1997
- 608
-
Structure and property changes in spinel irradiated with heavy ionsDevanathan, R. / Yu, N. / Sickafus, K. E. / Nastasi, M. et al. | 1997
- 612
-
Surface layer composition of ion bombarded spinel crystalsGritsyna, V. T. / Kasatkina, N. A. / Pershin, V. F. et al. | 1997
- 616
-
Surface energy absorbing layers produced by ion implantationGurarie, V. N. / Orlov, A. V. / Williams, J. S. et al. | 1997
- 621
-
A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O~3 filmsZheng, L. R. / Yang, P. X. / Wang, L. W. / Lin, C. L. / Zou, S. C. et al. | 1997
- 624
-
Ions implanted into TiO~2 rutile single crystals: Lattice disorder, lattice site occupation and conductivityMeyer, O. / Khubeis, I. / Fromknecht, R. / Massing, S. et al. | 1997
- 629
-
Ion irradiation damage in ilmenite at 100 KMitchell, J. N. / Yu, N. / Devanathan, R. / Sickafus, K. E. / Nastasi, M. A. / Nord, G. L. et al. | 1997
- 634
-
Structural modifications in uranium dioxide irradiated with swift heavy ionsGarrido, F. / Choffel, C. / Dran, J.-C. / Thome, L. / Nowicki, L. / Turos, A. et al. | 1997
- 639
-
1430 cm ^-^1 Raman line in ion implanted carbon rich amorphous silicon carbideCompagnini, G. / Foti, G. et al. | 1997
- 643
-
Ion beam induced mixing in thin film ceramic-ceramic systemsPadmanabhan, K. R. et al. | 1997
- 648
-
Effect of 690-keV Xe ion irradiation on the microstructure of amorphous MoSi~2/SiC nanolayer compositesLu, Y.-C. / Kung, H. / Jervis, T. R. / Hirvonen, J.-P. / Rueck, D. / Mitchell, T. E. / Nastasi, M. et al. | 1997
- 651
-
Compositional changes of silicon carbide induced by nitrogen implantationMiyagawa, S. / Baba, K. / Ikeyama, M. / Saitoh, K. / Nakao, S. / Miyagawa, Y. et al. | 1997
- 655
-
Ion implantation in 6H-SiCRao, M. V. / Nordstrom, D. / Gardner, J. A. / Edwards, A. / Roth, E. G. / Kelner, G. / Ridgway, M. et al. | 1997
- 660
-
Crystal structure of carbon-implanted titanium, vanadium and chromiumFujihana, T. / Okabe, Y. / Iwaki, M. et al. | 1997
- 664
-
Preparation, structure and properties of TaN and TaC films obtained by ion beam assisted depositionZhang, Q. Y. / Mei, X. X. / Yang, D. Z. / Chen, F. X. / Ma, T. C. / Wang, Y. M. / Teng, F. N. et al. | 1997
- 669
-
Application of ion implantation to ceramic/metal joiningSamandi, M. / Gudze, M. / Evans, P. et al. | 1997
- 673
-
Ion beam assisted deposition of metallic and ceramic thin filmsSikola, T. / Spousta, J. / Dittrichova, L. / Benes, L. / Perina, V. / Rafaja, D. et al. | 1997
- 677
-
Annealing studies of chromium-implanted silicon nitride ceramicsBrenscheidt, F. / Matz, W. / Wieser, E. / Moeller, W. et al. | 1997
- 681
-
Effect of damage cascades on the irradiation-induced amorphization in graphiteAbe, H. / Naramoto, H. / Iwase, A. / Kinoshita, C. et al. | 1997
- 685
-
Ion metal synthesis in viscous organic matterKhaibullin, I. B. / Khaibullin, R. I. / Abdullin, S. N. / Stepanov, A. L. / Osin, Y. N. / Bazarov, V. V. / Kurzin, S. P. et al. | 1997
- 691
-
SiO~2:chlorophyll gels under ^4He irradiationRickards, J. / Garcia, M. J. / Garcia, M. R. / Ramirez, E. / Lopez, K. et al. | 1997
- 694
-
Resolving the electronic and nuclear effects of MeV ions in polymersEvelyn, A. L. / Ila, D. / Zimmerman, R. L. / Bhat, K. / Poker, D. B. / Hensley, D. K. et al. | 1997
- 698
-
Mechanical and structural modification of CR-39 polymer surface by 50-keV hydrogen and argon ion implantationWielunski, L. S. / Clissold, R. A. / Yap, E. / McCulloch, D. G. / McKenzie, D. R. / Swain, M. V. et al. | 1997
- 702
-
Improvement of oxidation and erosion resistance of polymers and composites in space environment by ion implantationIskanderova, Z. / Kleiman, J. / Gudimenko, Y. / Morison, W. D. / Tennyson, R. C. et al. | 1997
- 710
-
Electronic properties of ion-implanted polymer filmsWang, Y. Q. / Giedd, R. E. / Moss, M. G. / Kaufmann, J. et al. | 1997
- 716
-
A new scintillating plastic formed by ion beam modificationWhitman, P. G. / Fay, T. D. / Bernard, D. L. / Sheu, W. J. / Wang, Y. Q. / Glass, G. A. et al. | 1997
- 719
-
Optical and electrical properties of C^+-implanted amorphous diamond-like carbon filmsFaizrakhmanov, I. A. / Bazarov, V. V. / Zhikharev, V. A. / Khaibullin, I. B. et al. | 1997
- 723
-
Microscopic studies of implanted ^7^3As in diamondCorreia, J. G. / Marques, J. G. / Alves, E. / Forkel-Wirth, D. / Jahn, S. G. / Restle, M. / Dalmer, M. / Hofsaess, H. / Bharuth-Ram, K. et al. | 1997
- 727
-
TEM and RBS/channelling of nanosized bicrystalline (Pb,Cd) inclusions in A1 made by sequential ion implantationJohnson, E. / Touboltsev, V. S. / Johansen, A. / Dahmen, U. / Hagege, S. et al. | 1997
- 734
-
Ordered gas-bubble precursors to nanoporous layer formation in helium-implanted metalsJohnson, P. B. / Gilberd, P. W. et al. | 1997
- 738
-
The structure and oxidation of highly cavitated metal surfaces: a study based on TEM and Raman spectroscopyGilberd, P. W. / Johnson, P. B. / Vickridge, I. C. et al. | 1997
- 742
-
Mechanism for ion beam passivation of copper surfacesKellock, A. J. / Tabacniks, M. H. / Baglin, J. E. E. / Somcio, N. S. / Bardin, T. T. / Miller, D. C. et al. | 1997
- 747
-
Diffusion behaviour of gold and mercury implanted into magnesiumToukan, K. / Khubeis, I. / Al-Zubi, F. / Al-Sa'adi, M. / Dababneh, S. / Bakraji, E. / Meyer, O. et al. | 1997
- 752
-
Ion beam-irradiation induced structure transformation in -AlMnSiGuo, Y. X. / Wang, L. M. / Chen, L. F. / Ewing, R. C. et al. | 1997
- 756
-
Iron-nitride phase transformations induced by the concomitant use of Ar irradiation and temperatureMoreira, E. C. / Amaral, L. / Sanchez, G. / Behar, M. et al. | 1997
- 760
-
Friction and wear measurements of 50 keV N implanted stainless steelsIkeyama, M. / Miyagawa, S. / Clissold, R. A. / Wielunski, L. S. / Swain, M. V. et al. | 1997
- 765
-
Saturated thickness of nitride layers formed by high fluence nitrogen implantation into metalsMiyagawa, Y. / Nakao, S. / Ikeyama, M. / Saitoh, K. / Miyagawa, S. et al. | 1997
- 770
-
Inhibition of stress corrosion cracking in WC-Co by means of ion implantationMakhele-Lekala, L. / Luyckx, S. / Derry, T. E. et al. | 1997
- 775
-
Chemical properties of ion beam sputter coated metal tubesEnsinger, W. et al. | 1997
- 779
-
High energy implantation with high-charge-state ions in a vacuum arc ion implanterOks, E. M. / Anders, A. / Brown, I. G. / Dickinson, M. R. / MacGill, R. A. et al. | 1997
- 782
-
Hybrid gas-metal co-implantation with a modified vacuum arc ion sourceOks, E. M. / Yushkov, G. Y. / Evans, P. J. / Oztarhan, A. / Brown, I. G. / Dickinson, M. R. / Liu, F. / MacGill, R. A. / Monteiro, O. R. / Wang, Z. et al. | 1997
- 787
-
Hydrogen accumulation in titanium, zirconium and hafnium caused by nitrogen implantationSoltani Farshi, M. / Baumann, H. / Rueck, D. / Bethge, K. et al. | 1997
- 791
-
Sputtering studies during lanthanum implantation in stainless steelsAger, F. J. / Respaldiza, M. A. / Soares, J. C. / Da Silva, M. F. / Odriozola, J. A. et al. | 1997
- 796
-
Low energy ion assist during deposition - an effective tool for controlling thin film microstructureEnsinger, W. et al. | 1997
- 809
-
The dependence of stress in IBAD films on the ion-irradiation energy and fluxSchweitz, K. O. / Arndt, J. / Boettiger, J. / Chevallier, J. et al. | 1997
- 813
-
Manipulation of texture by low-energy ion beams: Example ion assisted deposition of titanium nitrideRauschenbach, B. / Zeitler, M. / Gerlach, J. W. / Stritzker, B. et al. | 1997
- 821
-
Synthesis of multi-element thin-flms using mixed metal plasma streamsMonteiro, O. R. / Wang, Z. / Hou, P. Y. / Brown, I. G. et al. | 1997
- 827
-
Adhesive and corrosion-resistant zirconium oxide coatings on stainless steel prepared by ion beam assisted depositionHasuyama, H. / Shima, Y. / Baba, K. / Wolf, G. K. / Martin, H. / Stippich, F. et al. | 1997
- 832
-
Influence of the process parameters on the growth of YSZ-layers prepared by Ion Beam Assisted Deposition (IBAD)Knierim, A. / Auer, R. / Geerk, J. / Li, Y. / Linker, G. / Meyer, O. / Reiner, J. / Schweiss, P. / Smithey, R. et al. | 1997
- 837
-
Channel and temperature effect on the growth of yttria-stabilized zirconia films fabricated by ion-beam-assisted depositionYuan, J. / Yang, G. / Ren, C. / Liu, X. / Zou, S. et al. | 1997
- 841
-
Structure and properties of NbN and TaN films prepared by ion beam assisted depositionBaba, K. / Hatada, R. / Udoh, K. / Yasuda, K. et al. | 1997
- 846
-
Microstructure and mechanical properties of IBAD niobium films on sapphire substratesJi, H. / Was, G. S. / Jones, J. W. / Moody, N. R. et al. | 1997
- 851
-
Interfacial structure control of cubic boron nitride films prepared by ion-beam assisted depositionSetsuhara, Y. / Suzuki, T. / Tanaka, Y. / Miyake, S. / Suzuki, M. / Kumagai, M. / Ogata, K. / Kohata, M. / Higeta, K. / Einishi, T. et al. | 1997
- 857
-
Layered structure diagnostic and optical modelling of c-BN filmsPlass, M. F. / Fukarek, W. / Kolitsch, A. / Moeller, W. et al. | 1997
- 861
-
Materials modification by low-energy ion irradiationTereshko, I. V. / Khodyrev, V. I. / Lipsky, E. A. / Goncharenya, A. V. / Tereshko, A. M. et al. | 1997
- 865
-
Cleaning of metal surfaces by a broad beam ion sourceSikola, T. / Dittrichova, L. / Spousta, J. / Zlamal, J. / Stefka, J. et al. | 1997
- 869
-
Homogeneity measurements of plasma immersion ion-implanted complex-shaped samplesHoechbauer, T. / Ensinger, W. / Schrag, G. / Hartmann, J. / Stritzker, B. / Rauschenbach, B. et al. | 1997
- 873
-
Plasma immersion ion implantation of pure aluminium at elevated temperaturesBlawert, C. / Mordike, B. L. et al. | 1997
- 879
-
Ellipsometric investigation of damage distribution in low energy boron implantation of siliconFukarek, W. / Moeller, W. / Hatzopoulos, N. / Amour, D. G. / Van den Berg, J. A. et al. | 1997
- 884
-
Residual ion damage in GaAs:C prepared by combined ion beam and molecular beam epitaxyIida, T. / Makita, Y. / Horn, J. / Hartnagel, H. L. / Shima, T. / Kimura, S. / Shikama, K. / Sanpei, H. / Sandhu, A. / Kobayashi, N. et al. | 1997
- 888
-
Defects in thin amorphous Si films deposited with and without Ar^+ ion assistanceHoedemaker, M. / Van der Kuur, J. / Melker, E. J. / Thijsse, B. J. et al. | 1997
- 893
-
Direct deposition of silicon and silicon-oxide films using low-energy Si focused ion beamsYanagisawa, J. / Nakayama, H. / Matsuda, O. / Murase, K. / Gamo, K. et al. | 1997
- 897
-
Minimizing radiation damage in silicon structured with low energy focused ion beamsNebiker, P. W. / Doebeli, M. / Muehle, R. / Surer, M. et al. | 1997
- 901
-
Electrical effects of nitrogen plasma immersion ion implantation on siliconChen, S.-M. / Shannon, J. M. / Gwilliam, R. M. / Sealy, B. J. et al. | 1997
- 905
-
Sputtering of thin carbon foils by 20 keV and 40 keV Ar^+ bombardmentFunsten, H. O. / Shappirio, M. et al. | 1997
- 910
-
Low energy ion assisted carbon film growth: methods and mechanismsUllmann, J. et al. | 1997
- 918
-
A new method for generating a refined beam of neutral radicalsHayashi, K. / Sakudo, N. / Noda, T. / Takeda, A. / Fujimura, K. / Shimizu, N. et al. | 1997
- 922
-
Carbon and metal-carbon implantations into tool steels for improved tribological performanceHirvonen, J.-P. / Harskamp, F. / Torri, P. / Willers, H. / Fusari, A. / Gibson, N. / Haupt, J. et al. | 1997
- 930
-
Relative roles of ion energy, ion flux, and sample temperature in low-energy nitrogen ion implantation of Fe-Cr-Ni stainless steelWilliamson, D. L. / Davis, J. A. / Wilbur, P. J. / Vajo, J. J. / Wei, R. / Matossian, J. N. et al. | 1997
- 935
-
Finite-element modeling of nanoindentation for determining the mechanical properties of implanted layers and thin filmsKnapp, J. A. / Follstaedt, D. M. / Barbour, J. C. / Myers, S. M. et al. | 1997
- 940
-
A new industrial ion implanter for surface modification of metalsTorp, B. / Abrahamsen, P. / Blomqvist, K. I. / Eriksen, S. / Hoeeg, P. L. / Nielsen, B. R. / Mikkelsen, N. J. / Pedersen, J. / Straede, C. A. / Dossing, M. et al. | 1997
- 945
-
Ion bombardment of solid lubricating nanoparticle coatingsSobota, J. / Sorensen, G. et al. | 1997
- 949
-
Thin layer activation-based evaluation of tribological behaviour of light ion-implanted metallic samplesRacolta, P. M. / Popa-Simil, L. / Alexandreanu, B. / Mateescu, L. et al. | 1997
- 954
-
Ion implantation modification of special steels in ThailandYu, L. D. / Vilaithong, T. / Suwannakachorn, D. / Intarasiri, S. / Thongtem, S. et al. | 1997
- 961
-
Corrosion properties of silicon-on-steel ion beam mixed layersJagielski, J. / Baszkiewicz, J. / Turos, A. / Gawlik, G. et al. | 1997
- 967
-
On the residual stress profile developed in titanium nitride by ion implantationPerry, A. J. / Geist, D. E. et al. | 1997
- 972
-
Boron and nitrogen implantation of steelsKern, K. T. / Walter, K. C. / Griffin, A. J. / Lu, Y. / Nastasi, M. / Scarborough, W. K. / Tesmer, J. R. / Fayeulle, S. et al. | 1997
- 977
-
Properties of depth-profile controlled boron nitride films prepared by ion-beam assisted depositionKumagai, M. / Suzuki, M. / Suzuki, T. / Tanaka, Y. / Setsuhara, Y. / Miyake, S. / Ogata, K. / Kohata, M. / Higeta, K. / Einishi, T. et al. | 1997
- 981
-
Ion implantation of silicon nitride ball bearingsWilliams, J. M. / Miner, J. R. et al. | 1997
- 987
-
Surface modification of AlSl-4620 steel with intense pulsed ion beamsRej, D. J. / Davis, H. A. / Nastasi, M. / Olson, J. C. / Peterson, E. J. / Reiswig, R. D. / Walter, K. C. / Stinnett, R. W. / Remnev, G. E. / Struts, V. K. et al. | 1997
- 992
-
High energy metal ion implantation using a novel, broad-beam, Marx-generator-based ion source "Magis"Anders, A. / Brown, I. G. / Dickinson, M. R. / MacGill, R. A. et al. | 1997
- 996
-
Comparison of measured and calculated dose for plasma source ion implantation into 3-D objectsMaendl, S. / Barradas, N. P. / Brutscher, J. / Guenzel, R. / Moeller, W. et al. | 1997
- 1000
-
Improvement of the corrosion property of Cr4Mo4V bearing steel using plasma immersion ion implantationWang, S. Y. / Chu, P. K. / Tang, B. Y. / Zeng, X. C. / Wang, X. F. et al. | 1997
- 1004
-
A performance study of plasma source ion-implanted tools versus high-speed steel toolsWoods, R. H. / Lambert, B. K. et al. | 1997
- 1008
-
Surface modification of biomedical implants using ion-beam-assisted sputter depositionEktessabi, A. M. et al. | 1997
- 1015
-
A new surface modification technique of platinum coils by ion implantation and protein coating: Use in intravascular treatment of brain aneurysmsMurayama, Y. / Suzuki, Y. / Vi�uela, F. / Massoud, T. F. / Do, H. M. / Guglielmi, G. / Iwaki, M. / Kamio, M. / Abe, T. et al. | 1997
- 1019
-
Ion implantation into collagen for the substrate of small diameter artificial graftsSuzuki, Y. / Iwata, H. / Nakao, A. / Iwaki, M. / Kaibara, M. / Sasabe, H. / Kaneko, S. / Nakajima, H. / Kusakabe, M. et al. | 1997
- 1023
-
Permeability control of GPC drug delivery systemZimmerman, R. L. / Ila, D. / Poker, D. B. / Withrow, S. P. et al. | 1997
-
Dislocation formation and gettering mechanism of impurity atoms close to the active regionGadiyak, G. V. et al. | 1997
-
Preparation of thin films by filtered arc deposition and ion assisted arc depositionZhao, J. P. / Wang, X. / Chen, Z. Y. / Yang, S. Q. / Shi, T. S. / Liu, X. H. / Zou, S. C. et al. | 1997