Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies (English)
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In:
Silicon Carbide, III-Nitrides and Related Materials
1
;
603-606
;
1998
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ISSN:
- Article (Journal) / Print
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Title:Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
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Contributors:Son, N. T. ( author ) / Ellison, A. ( author ) / MacMillan, M. F. ( author ) / Kordina, O. ( author ) / Chen, W. M. ( author ) / Monemar, B. ( author ) / Janzen, E. ( author ) / Pensl, G. / Morkoc, H. / Monemar, B.
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Published in:Silicon Carbide, III-Nitrides and Related Materials , 1 ; 603-606MATERIALS SCIENCE FORUM ; 264/268, 1 ; 603-606
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Publisher:
- New search for: TRANS TECH PUBLICATIONS LTD
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Publication date:1998-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 620.11
- Further information on Dewey Decimal Classification
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Classification:
DDC: 620.11 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 264/268, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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SiC Seeded Boule GrowthTsvetkov, V. / Glass, R. C. / Henshall, D. / Asbury, D. / Carter, C. H. et al. | 1998
- 9
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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor TransportAugustine, G. / Hobgood, H. M. / Balakrishna, V. / Dunne, G. T. / Hopkins, R. H. / Thomas, R. N. / Doolittle, W. A. / Rohatgi, A. et al. | 1998
- 13
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Sublimation Growth of 50mm Diameter SiC WafersPowell, A. R. / Wang, S. / Fechko, G. / Brandes, G. R. et al. | 1998
- 17
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Experimental Investigation of 4H-SiC Bulk Crystal GrowthChourou, K. / Anikin, M. / Bluet, J. M. / Lauer, V. / Guillot, G. / Camassel, J. / Juillaguet, S. / Chaix, O. / Pons, M. / Madar, R. et al. | 1998
- 21
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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation MethodOkamoto, A. / Sugiyama, N. / Tani, T. / Kamiya, N. et al. | 1998
- 25
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Influence of the Growth Direction and Polytype on the Stacking Fault Generation in -SiCTakahashi, J. / Ohtani, N. / Katsuno, M. / Shinoyama, S. et al. | 1998
- 29
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X-Ray Section Topographic Investigation of the Growth Process of SiC CrystalsMilita, S. / Madar, R. / Baruchel, J. / Mazuelas, A. et al. | 1998
- 33
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Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk CrystalsMueller, S. G. / Eckstein, R. / Hartung, W. / Hofmann, D. / Koelbl, M. / Pensl, G. / Schmitt, E. / Schmitt, E. J. / Weber, A.-D. / Winnacker, A. et al. | 1998
- 37
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The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC GrowthHeydemann, V. D. / Rohrer, G. S. / Sanchez, E. K. / Skowronski, M. et al. | 1998
- 41
-
Defect Formation Mechanism of Bulk SiCSasaki, M. / Nishio, Y. / Nishino, S. / Nakashima, S. / Harima, H. et al. | 1998
- 45
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Enlargement of SiC Crystals: Defect Formation at the InterfacesAnikin, M. / Pons, M. / Chourou, K. / Chaix, O. / Bluet, J. M. / Lauer, V. / Madar, R. et al. | 1998
- 49
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Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiCOhtani, N. / Katsuno, M. / Takahashi, J. / Yashiro, H. / Kanaya, M. / Shinoyama, S. et al. | 1998
- 53
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Optically Transparent 6H-Silicon CarbideBakin, A. S. / Dorozhkin, S. I. / Zubrilov, A. S. / Kuznetsov, N. I. / Tairov, Y. M. et al. | 1998
- 57
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Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental VerificationMueller, S. G. / Eckstein, R. / Hofmann, D. / Kadinski, L. / Kaufmann, P. / Koelbl, M. / Schmitt, E. et al. | 1998
- 61
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Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum ContainerEgorov, Y. E. / Galyukov, A. O. / Gurevich, S. G. / Makarov, Y. N. / Mokhov, E. N. / Ramm, M. G. / Ramm, M. S. / Roenkov, A. D. / Segal, A. S. / Vodakov, Y. A. et al. | 1998
- 65
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A Coupled Finite Element Model for the Sublimation Growth of SiCRaaback, P. / Nieminen, R. / Yakimova, R. / Tuominen, M. / Janzen, E. et al. | 1998
- 69
-
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk GrowthMueller, M. / Bickermann, M. / Hofmann, D. / Weber, A.-D. / Winnacker, A. et al. | 1998
- 73
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Dissolution and Growth of Silicon Carbide Crystals in Melt-SolutionsIvantsov, V. / Dmitriev, V. et al. | 1998
- 77
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Sublimation Growth of Bulk -SiC Crystals on (100) and (111) -SiC SubstratesJayatirtha, H. N. / Spencer, M. G. et al. | 1998
- 83
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SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE ReactorBurk, A. A. / O'Loughlin, M. J. / Mani, S. S. et al. | 1998
- 89
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Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage ApplicationsRupp, R. / Wiedenhofer, A. / Friedrichs, P. / Peters, D. / Schoerner, R. / Stephani, D. et al. | 1998
- 97
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Growth and Characterisation of SiC Power Device MaterialKordina, O. / Henry, A. / Janzen, E. / Carter, C. H. et al. | 1998
- 103
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Growth and Characterisation of Thick SiC Epilayers by High Temperature CVDEllison, A. / Kimoto, T. / Ivanov, I. G. / Wahab, Q. / Henry, A. / Kordina, O. / Zhang, J. / Hemmingsson, C. G. / Gu, C.-Y. / Leys, M. R. et al. | 1998
- 107
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Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor DepositionKordina, O. / Irvine, K. / Sumakeris, J. / Kong, H. S. / Paisley, M. J. / Carter, C. H. et al. | 1998
- 111
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Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle DependenceYamamoto, T. / Kimoto, T. / Matsunami, H. et al. | 1998
- 115
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Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiCRowland, L. B. / Burk, A. A. / Brandt, C. D. et al. | 1998
- 119
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Boron Compensation of 6H Silicon CarbideMazzola, M. S. / Saddow, S. E. / Schoener, A. et al. | 1998
- 123
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CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal PlaneHallin, C. / Ellison, A. / Ivanov, I. G. / Henry, A. / Son, N. T. / Janzen, E. et al. | 1998
- 127
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Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD ReactorWischmeyer, F. / Leidich, D. / Niemann, E. et al. | 1998
- 131
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Growth of 4H and 6H SiC in Trenches and Around Stripe MesasNordell, N. / Karlsson, S. / Konstantinov, A. O. et al. | 1998
- 135
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Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial GrowthChristiansen, K. / Dalibor, T. / Helbig, R. / Christiansen, S. / Strunk, H. P. et al. | 1998
- 139
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Epitaxial Growth of SiC on -SiC Using Si~2Cl~6+C~3H~8+H~2 SystemNishino, S. / Miyanagi, T. / Nishio, Y. et al. | 1998
- 143
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High Growth Rate of -SIC by Sublimation EpitaxySyvaejaervi, M. / Yakimova, R. / MacMillan, M. F. / Tuominen, M. / Kakanakova-Georgieva, A. / Hemmingsson, C. G. / Ivanov, I. G. / Janzen, E. et al. | 1998
- 147
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The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy TechniqueKakanakova-Georgieva, A. / MacMillan, M. F. / Nishino, S. / Yakimova, R. / Janzen, E. et al. | 1998
- 151
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Domain Occurrence in SiC Epitaxial Layers Grown by SublimationTuominen, M. / Yakimova, R. / Kakanakova-Georgieva, A. / MacMillan, M. F. / Syvaejaervi, M. / Janzen, E. et al. | 1998
- 155
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Epitaxy of High Quality SiC Layers by CSTYoshida, T. / Nishio, Y. / Lilov, S. K. / Nishino, S. et al. | 1998
- 159
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Wetting Properties and Interfacial Energies in Liquid Phase Growth of -SiCYakimova, R. / Syvaejaervi, M. / Janzen, E. et al. | 1998
- 163
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High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase EpitaxyRendakova, S. / Ivantsov, V. / Dmitriev, V. et al. | 1998
- 167
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Thick Film SiC Epitaxy for 'Filling Up' MicropipesKhlebnikov, I. / Madangarli, V. P. / Khan, M. A. / Sudarshan, T. S. et al. | 1998
- 171
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A New Radiation Heated 4 Inch LPCVD System for -SiC HeteroepitaxyMoeller, H. / Legner, W. / Kroetz, G. et al. | 1998
- 175
-
Epitaxial Growth of 3C-SiC without Carbonization Process Using 1,3-DisilabutaneLee, K.-W. / Yu, K.-S. / Bae, J. W. / Kim, Y. et al. | 1998
- 179
-
Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature DependenceWu, C.-H. / Fleischman, A. J. / Zorman, C. A. / Mehregany, M. et al. | 1998
- 183
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CVD Growth Mechanism of 3C-SiC on Si SubstratesIshida, Y. / Takahashi, T. / Okumura, H. / Yoshida, S. / Sekigawa, T. et al. | 1998
- 187
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Growth of Epitaxial Cubic SiC Thin Films Using Single Source PrecursorsBoo, J.-H. / Lee, S.-B. / Ustin, S. A. / Ho, W. / Maruska, H. P. / Norris, P. E. / Kim, I.-H. / Sung, C. et al. | 1998
- 191
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Crystallinity of 3C-SiC Films Grown on Si SubstratesYagi, K. / Nagasawa, H. et al. | 1998
- 195
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Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) SubstratesShim, H. W. / Kim, K. C. / Seo, Y. H. / Nahm, K. S. / Suh, E.-K. / Lee, H. J. / Hwang, Y. G. et al. | 1998
- 199
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The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si SubstrateSeo, Y. H. / Kim, K. C. / Shim, H. W. / Nahm, K. S. / Suh, E. K. / Lee, H. J. / Hwang, Y. G. / Kim, D.-K. / Lee, B.-T. et al. | 1998
- 203
-
Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEMTakaoka, T. / Saito, H. / Igari, Y. / Kusunoki, I. et al. | 1998
- 207
-
Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si SubstratesTakahashi, T. / Ishida, Y. / Okumura, H. / Yoshida, S. / Sekigawa, T. et al. | 1998
- 211
-
Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVDShimizu, H. / Shiga, M. et al. | 1998
- 215
-
Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in SiliconLindner, J. K. N. / Reiber, W. / Stritzker, B. et al. | 1998
- 219
-
Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) SiliconScholz, R. / Goesele, U. / Wischmeyer, F. / Niemann, E. et al. | 1998
- 223
-
Fabrication of 3C-SiC on SiO~2 Structures Using Wafer Bonding TechniquesZorman, C. A. / Vinod, K. N. / Yasseen, A. / Mehregany, M. et al. | 1998
- 227
-
Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of -SiC on Si(100) SubstrateFerro, G. / Vincent, H. / Monteil, Y. / Chaussende, D. / Bouix, J. et al. | 1998
- 231
-
Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon SubstratesMitchell, S. / Spencer, M. G. / Wongchotigul, K. et al. | 1998
- 235
-
Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary SystemHatayama, T. / Fuyuki, T. / Matsunami, H. et al. | 1998
- 239
-
Heteroepitaxial Growth of SiC on Si by Gas Source MBE with SilacyclobutaneChen, J. / Steckl, A. J. / Loboda, M. J. et al. | 1998
- 243
-
Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVDUchida, M. / Deguchi, M. / Takahashi, K. / Kitabatake, M. / Kitagawa, M. et al. | 1998
- 247
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Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBESchmitt, J. / Troffer, T. / Christiansen, K. / Christiansen, S. / Helbig, R. / Pensl, G. / Strunk, H. P. et al. | 1998
- 251
-
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam EpitaxyPezoldt, J. / Stauden, T. / Cimalla, V. / Ecke, G. / Romanus, H. / Eichhorn, G. et al. | 1998
- 255
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Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBEFissel, A. / Pfennighaus, K. / Kaiser, U. / Kraeusslich, J. / Hobert, H. / Schroeter, B. / Richter, W. et al. | 1998
- 259
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Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBEKaiser, U. / Brown, P. D. / Chuvilin, A. / Khodos, I. / Fissel, A. / Richter, W. / Preston, A. / Humphreys, C. J. et al. | 1998
- 265
-
Electronic Properties of SiC Polytypes and HeterostructuresBechstedt, F. et al. | 1998
- 271
-
Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC PolytypesLambrecht, W. R. L. / Limpijumnong, S. / Rashkeev, S. N. / Segall, B. et al. | 1998
- 275
-
Calculated Density of States and Carrier Concentration in 4H- and 6H-SiCPersson, C. / Lindefelt, U. et al. | 1998
- 279
-
Theoretical Studies on Defects in SiCDeak, P. / Gali, A. / Miro, J. / Guiterrez, R. / Sieck, A. / Frauenheim, T. et al. | 1998
- 283
-
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking FaultsZywietz, A. / Kaeckell, P. / Furthmueller, J. / Bechstedt, F. et al. | 1998
- 287
-
Calculation of Nonlinear Optical Susceptibilities for Different Polytypes of Silicon CarbideAdolph, B. / Bechstedt, F. et al. | 1998
- 291
-
Comparative Monte Carlo Study of Electron Transport in 3C, 4H and 6H Silicon CarbideMickevicius, R. / Zhao, J. H. et al. | 1998
- 295
-
Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiCKinoshita, T. / Itoh, K. M. / Muto, J. / Schadt, M. / Pensl, G. / Takeda, K. et al. | 1998
- 299
-
The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-StructuresLucovsky, G. / Yang, H. / Luepke, G. et al. | 1998
- 303
-
Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlNKarch, K. / Wagner, J.-M. / Siegle, H. / Thomsen, C. / Bechstedt, F. et al. | 1998
- 307
-
Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaNSterner, H. / Schewiola, A. / Karch, K. / Pavone, P. / Strauch, D. / Siegle, H. / Kaczmarczyk, G. / Filippidis, L. / Thomsen, C. et al. | 1998
- 311
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Electronic States of BC~2N Heterodiamond (111) SuperlatticesTateyama, Y. / Kusakabe, K. / Ogitsu, T. / Tsuneyuki, S. et al. | 1998
- 315
-
From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si~1~-~xC~x PhasesMasri, P. / Moreaud, N. / Calas, J. / Averous, M. et al. | 1998
- 321
-
Large Unit Cell Superstructures on Hexagonal SiC-Surfaces Studied by LEED, AES and STMStarke, U. / Franke, M. / Bernhardt, J. / Schardt, J. / Reuter, K. / Heinz, K. et al. | 1998
- 327
-
Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial GrowthKitabatake, M. et al. | 1998
- 331
-
Electronic and Atomic Structure of the C-Terminated 6H-SiC SurfaceHollering, M. / Mattern, B. / Maier, F. / Ley, L. / Stampfl, A. P. J. / Xue, J. / Riley, J. D. / Leckey, R. C. G. et al. | 1998
- 335
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Deposition of Cs on Graphitized 4H-SiC SurfacesVan Elsbergen, V. / Nienhaus, H. / Moench, W. et al. | 1998
- 339
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Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial GrowthFurthmueller, J. / Kaeckell, P. / Bechstedt, F. / Fissel, A. / Pfennighaus, K. / Schroeter, B. / Richter, W. et al. | 1998
- 343
-
Polarity Dependent Step Bunching and Structure of Hexagonal SiC SurfacesSchardt, J. / Bernhardt, J. / Franke, M. / Starke, U. / Heinz, K. et al. | 1998
- 347
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Collective Surface Excitations in 3C-SiC(100)Balster, T. / Polyakov, V. M. / Tautz, F. S. / Ibach, H. / Schaefer, J. A. et al. | 1998
- 351
-
FTIR-ATR Analysis of SiC(0001) and SiC(0001) SurfacesTsuchida, H. / Kamata, I. / Izumi, K. et al. | 1998
- 355
-
Polytype and Surface Characterization of Silicon Carbide Thin FilmsSchroeter, B. / Kreuzberg, M. / Fissel, A. / Pfennighaus, K. / Richter, W. et al. | 1998
- 359
-
Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiCKanaya, M. / Yashiro, H. / Ohtani, N. / Katsuno, M. / Takahashi, J. / Shinoyama, S. et al. | 1998
- 363
-
AFM Study of In Situ Etching of 4H and 6H SiC SubstratesKarlsson, S. / Nordell, N. et al. | 1998
- 367
-
Surface Morphology Improvement of SiC Epitaxy by Sacrificial OxidationAnthony, C. J. / Pidduck, A. J. / Uren, M. J. et al. | 1998
- 371
-
The Formation of Super-Dislocation/Micropipe Complexes in 6H-SiCGiocondi, J. / Rohrer, G. S. / Skowronski, M. / Balakrishna, V. / Augustine, G. / Hobgood, H. M. / Hopkins, R. H. et al. | 1998
- 375
-
High Resolution Photoemission Study of the 6H-SiC/SiO~2 InterfaceMattern, B. / Bassler, M. / Pensl, G. / Ley, L. et al. | 1998
- 379
-
Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the -SiC(001) c(4x2) SurfaceDouillard, L. / Semond, F. / Aristov, V. Y. / Soukiassian, P. / Delley, B. / Mayne, A. / Dujardin, G. / Wimmer, E. et al. | 1998
- 383
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Angle-Resolved Photoemission Study of the -SiC(100)-(2x1)-SurfaceHuesken, H. / Schroeter, B. / Richter, W. / Kaeckell, P. / Bechstedt, F. et al. | 1998
- 387
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Self-Organized One-Dimensional Si Atomic Chains on Cubic Silicon Carbide SurfaceSemond, F. / Aristov, V. Y. / Douillard, L. / Fauchoux, O. / Soukiassian, P. / Mayne, A. / Dujardin, G. et al. | 1998
- 391
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High Resolution Photoemission Spectroscopy Using Synchrotron Radiation Study of the SiO~2/-SiC(100)3x2 Interface CompositionDunham, D. / Soukiassian, P. / Denlinger, J. D. / Tonner, B. P. / Rothenberg, E. et al. | 1998
- 395
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Raman Investigation of Stress Relaxation at the 3C-SiC/Si InterfaceBluet, J. M. / Falkovsky, L. A. / Planes, N. / Camassel, J. et al. | 1998
- 399
-
Extended Defects in SiC and GaN SemiconductorsPirouz, P. et al. | 1998
- 409
-
Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (0001) Carbon FacesStoemenos, J. / Di Cioccio, L. / Papaioannou, V. / David, D. / Pudda, C. et al. | 1998
- 413
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Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiCPersson, P. O. A. / Wahab, Q. / Hultman, L. / Nordell, N. / Schoener, A. / Rottner, K. / Olsson, E. / Linnarsson, M. K. et al. | 1998
- 417
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The Origin of Triangular Surface Defects in 4H-SiC CVD EpilayersZhou, W. L. / Pirouz, P. / Powell, J. A. et al. | 1998
- 421
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Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single CrystalsPowell, J. A. / Larkin, D. J. / Trunek, A. J. et al. | 1998
- 425
-
Equilibrium Growth Morphologies of SiC PolytypesMueller, S. G. / Eckstein, R. / Grimbergen, R. F. P. / Hofmann, D. / Rexer, B. et al. | 1998
- 429
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Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single CrystalsSi, W. / Dudley, M. / Glass, R. / Tsvetkov, V. / Carter, C. H. et al. | 1998
- 433
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Structural Characterization of SiC Crystals Grown by Physical Vapor TransportSanchez, E. K. / Heydemann, V. D. / Rohrer, G. S. / Skowronski, M. / Solomon, J. / Capano, M. A. / Mitchel, W. C. et al. | 1998
- 437
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Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray DiffractionRomanus, H. / Teichert, G. / Spiess, L. et al. | 1998
- 441
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Site Identification of 6H-SiC Using RBS/Channeling TechniqueSatoh, M. / Okamoto, K. / Iwata, Y. / Kuriyama, K. / Kanaya, M. / Ohtani, N. et al. | 1998
- 445
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Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-InsulatorPapaioannou, V. / Pavlidou, E. / Stoemenos, J. / Reichert, W. / Obermeier, E. et al. | 1998
- 449
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Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman ScatteringHarima, H. / Hosoda, T. / Nakashima, S. et al. | 1998
- 455
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Optical Properties of Silicon Carbide: Some Recent DevelopmentsDevaty, R. P. / Choyke, W. J. / Sridhara, S. G. / Clemen, L. L. / Nizhner, D. G. / Larkin, D. J. / Troffer, T. / Pensl, G. / Kimoto, T. / Kong, H. S. et al. | 1998
- 461
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Boron Four Particle Acceptor Bound Exciton Complex in 4H SiCSridhara, S. G. / Nizhner, D. G. / Devaty, R. P. / Choyke, W. J. / Troffer, T. / Pensl, G. / Larkin, D. J. / Kong, H. S. et al. | 1998
- 465
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Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiCSridhara, S. G. / Clemen, L. L. / Nizhner, D. G. / Devaty, R. P. / Choyke, W. J. / Larkin, D. J. et al. | 1998
- 469
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Some Aspects of the Photoluminescence and Raman Spectroscopy of (1010)-and (1120)-Oriented 4H and 6H Silicon CarbideIvanov, I. G. / Henry, A. / Hallin, C. / Egilsson, T. / Janzen, E. et al. | 1998
- 473
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The Neutral Silicon Vacancy in 6H and 4H SiCSoerman, E. / Chen, W. M. / Son, N. T. / Hallin, C. / Lindstroem, J. L. / Monemar, B. / Janzen, E. et al. | 1998
- 477
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Bound Exciton Recombination in Electron Irradiated 4H-SiCEgilsson, T. / Henry, A. / Ivanov, I. G. / Lindstroem, J. L. / Janzen, E. et al. | 1998
- 481
-
Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and MappingTajima, M. / Kumagaya, Y. / Nakata, T. / Inoue, M. / Nakamura, A. et al. | 1998
- 485
-
Time Resolved PL Study of Multi Bound Excitons in 3C SiCBergman, J. P. / Janzen, E. / Sridhara, S. G. / Choyke, W. J. et al. | 1998
- 489
-
Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial StressIvanov, I. G. / Lindefelt, U. / Henry, A. / Egilsson, T. / Kordina, O. / Janzen, E. et al. | 1998
- 493
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D~I~I Revisited in an Modern Guise - 6H and 4H SiCSridhara, S. G. / Nizhner, D. G. / Devaty, R. P. / Choyke, W. J. / Dalibor, T. / Pensl, G. / Kimoto, T. et al. | 1998
- 497
-
Near Band-Gap Emission in V-Implanted and Annealed 4H-SiCHenry, A. / Egilsson, T. / Ivanov, I. G. / Harris, C. I. / Savage, S. / Janzen, E. et al. | 1998
- 501
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Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen IonsKozanecki, A. / Jeynes, C. / Sealy, B. J. / Jantsch, W. / Lanzerstorfer, S. / Heiss, W. / Prechtl, G. et al. | 1998
- 505
-
Luminescence Properties of Er Implanted Polycrystalline 3C SiCUekusa, S.-I. / Awahara, K. / Kumagai, M. et al. | 1998
- 509
-
Measurement of High Field Electron Transport in Silicon CarbideKhan, I. A. / Cooper, J. A. et al. | 1998
- 513
-
Ionization Rates and Critical Fields in 4H SiC Junction DevicesKonstantinov, A. O. / Wahab, Q. / Nordell, N. / Lindefelt, U. et al. | 1998
- 517
-
Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine TeslaRutsch, G. / Devaty, R. P. / Langer, D. W. / Rowland, L. B. / Choyke, W. J. et al. | 1998
- 521
-
Electrical Conductivity of Single-Crystalline Bulk 6H-SiC and Epitaxial Layers of AlN in the Temperature Range 300-2300 KAvrov, D. D. / Bakin, A. S. / Dorozhkin, S. I. / Lebedev, A. O. / Rastegaev, V. P. et al. | 1998
- 525
-
Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay TechniqueZhou, W. / Khlebnikov, I. / Sudarshan, T. S. / Capano, M. A. / Mitchel, W. C. et al. | 1998
- 529
-
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport ParametersGrivickas, V. / Linnros, J. / Galeckas, A. et al. | 1998
- 533
-
Evaluation of Auger Recombination Rate in 4H-SiCGaleckas, A. / Linnros, J. / Grivickas, V. / Lindefelt, U. / Hallin, C. et al. | 1998
- 537
-
Ground States of the Ionized Isoelectronic Ti Acceptor in SiCDalibor, T. / Pensl, G. / Nordell, N. / Schoener, A. / Choyke, W. J. et al. | 1998
- 541
-
Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiCAchtziger, N. / Grillenberger, J. / Witthuhn, W. et al. | 1998
- 545
-
Deep Levels in SiC:V by High Temperature Transport MeasurementsMitchel, W. C. / Perrin, R. / Goldstein, J. / Roth, M. / Ahoujja, M. / Smith, S. R. / Evwaraye, A. O. / Solomon, J. S. / Landis, G. / Jenny, J. et al. | 1998
- 549
-
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient SpectroscopyScott, M. B. / Scofield, J. D. / Yeo, Y. K. / Hengehold, R. L. et al. | 1998
- 553
-
Oxygen-Related Defect Centers in 4H Silicon CarbideDalibor, T. / Pensl, G. / Yamamoto, T. / Kimoto, T. / Matsunami, H. / Sridhara, S. G. / Nizhner, D. G. / Devaty, R. P. / Choyke, W. J. et al. | 1998
- 557
-
Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiCTroffer, T. / Pensl, G. / Schoener, A. / Henry, A. / Hallin, C. / Kordina, O. / Janzen, E. et al. | 1998
- 561
-
Observation of Metastable Defect in Electron Irradiated 6H-SiCHemmingsson, C. G. / Son, N. T. / Kordina, O. / Lindstroem, J. L. / Janzen, E. et al. | 1998
- 565
-
Electrically Active Defects in n-Type 4H- and 6H-SiCDoyle, J. P. / Aboelfotoh, M. O. / Svensson, B. G. et al. | 1998
- 569
-
Phonon Spectrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance SpectroscopySmith, S. R. / Evwaraye, A. O. / Mitchel, W. C. et al. | 1998
- 573
-
Electrical and Transmission Electron Microscopy Characterisation of 4H-SiC Homoepitaxial Mesa DiodesCzerwinski, A. / Ratajczak, J. / Katcki, J. / Bakowski, A. / Bakowski, M. et al. | 1998
- 577
-
High-Temperature Annealing of 6H-SiC Single Crystals and the Site-Competition ProcessesVlaskina, S. I. / Lee, Y. P. / Rodionov, V. E. / Kaminska, M. et al. | 1998
- 581
-
Electronic Structure of Acceptors in Silicon CarbideBaranov, P. G. et al. | 1998
- 587
-
High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiCSchmidt, J. / Matsumoto, T. / Poluektov, O. G. / Van Duijn-Arnold, A. / Ikoma, T. / Baranov, P. G. / Mokhov, E. N. et al. | 1998
- 591
-
On the Identification of an Al Related Deep Centre in 4H-SiC - Self-Compensation in SiC?Meyer, B. K. / Hofstaetter, A. / Baranov, P. G. et al. | 1998
- 595
-
X-Band ENDOR of Boron and Beryllium Acceptors in Silicon CarbideHofstaetter, A. / Meyer, B. K. / Scharmann, A. / Baranov, P. G. / Ilyin, I. V. / Mokhov, E. N. et al. | 1998
- 599
-
Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiCSon, N. T. / Wagner, M. / Soerman, E. / Chen, W. M. / Monemar, B. / Janzen, E. et al. | 1998
- 603
-
Chromium in 4H and 6H SiC: Photoluminescence and Zeeman StudiesSon, N. T. / Ellison, A. / MacMillan, M. F. / Kordina, O. / Chen, W. M. / Monemar, B. / Janzen, E. et al. | 1998
- 607
-
Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide CrystalsBaranov, P. G. / Ilyin, I. V. / Mokhov, E. N. et al. | 1998
- 611
-
Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin ResonanceKawasuso, A. / Itoh, H. / Cha, D. / Okada, S. et al. | 1998
- 615
-
ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-ElectronsCha, D. / Itoh, H. / Morishita, N. / Kawasuso, A. / Ohshima, T. / Watanabe, Y. / Ko, J. / Lee, K. / Nashiyama, I. et al. | 1998
- 619
-
Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas SupplyIzumi, T. / Kobayashi, K. / Hirosawa, E. / Kawahara, T. / Nagasawa, H. et al. | 1998
- 623
-
Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiCMueller, S. G. / Eckstein, R. / Fricke, J. / Hofmann, D. / Hofmann, R. / Horn, R. / Mehling, H. / Nilsson, O. et al. | 1998
- 627
-
Deformation of Monocrystalline 6H-SiCSamant, A. V. / Zhou, W. L. / Pirouz, P. et al. | 1998
- 631
-
Measurement of the Thermal Conductivity of Thin -SiC Films between 80 K and 600 KJansen, E. / Ziermann, R. / Obermeier, E. / Kroetz, G. / Wagner, C. et al. | 1998
- 635
-
Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth ConditionsChandra, K. / Zorman, C. A. / Mehregany, M. et al. | 1998
- 641
-
The Measurement of the Thickness of Thin SiC Layers on SiliconCimalla, V. / Scheiner, J. / Ecke, G. / Friedrich, M. / Goldhahn, R. / Zahn, D. R. T. / Pezoldt, J. et al. | 1998
- 645
-
Thickness Contour Mapping of SiC Epi-Films on SiC SubstratesMacMillan, M. F. / Narfgren, P. O. / Henry, A. / Janzen, E. et al. | 1998
- 649
-
Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC SubstratesMacMillan, M. F. / Forsberg, U. / Persson, P. O. A. / Hultman, L. / Janzen, E. et al. | 1998
- 653
-
Cathodoluminescence of Defect Regions in SiC Epi-FilmsMacMillan, M. F. / Hultman, L. / Hallin, C. / Ivanov, I. G. / Henry, A. / Janzen, E. / Galloway, S. A. et al. | 1998
- 657
-
Contactless Measurement of the Thermal Conductivity of Thin SiC LayersRohmfeld, S. / Hundhausen, M. / Ley, L. et al. | 1998
- 661
-
Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC LayersWerninghaus, T. / Zahn, D. R. T. / Yankov, R. A. / Muecklich, A. / Pezoldt, J. et al. | 1998
- 665
-
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS CapacitorsMadangarli, V. P. / Sudarshan, T. S. et al. | 1998
- 669
-
Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si SubstratesHagiwara, C. / Itoh, K. M. / Muto, J. / Nagasawa, H. / Yagi, K. / Harima, H. / Mizoguchi, K. / Nakashima, S. et al. | 1998