Structure and properties of ion-beam-modified (^6H) silicon carbide (English)
- New search for: Weber, W. J.
- New search for: Wang, L. M.
- New search for: Yu, N.
- New search for: Hess, N. J.
- New search for: Weber, W. J.
- New search for: Wang, L. M.
- New search for: Yu, N.
- New search for: Hess, N. J.
In:
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A
;
253
, 1-2
;
62-70
;
1998
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ISSN:
- Article (Journal) / Print
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Title:Structure and properties of ion-beam-modified (^6H) silicon carbide
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Contributors:
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Published in:MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 253, 1-2 ; 62-70
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Publisher:
- New search for: ELSEVIER SEQUOIA SA
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Publication date:1998-01-01
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Size:9 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 620.11
- Further information on Dewey Decimal Classification
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Classification:
DDC: 620.11 -
Source:
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Table of contents – Volume 253, Issue 1-2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Nanometer-size dispersions of iron in sapphire prepared by ion implantation and annealingMcHargue, C.J. et al. | 1998
- 8
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Ion implantation of semiconductorsWilliams, J.S. et al. | 1998
- 16
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Topological modeling of cascade amorphization in network structures using local rulesHobbs, Linn W. et al. | 1998
- 30
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Ion beam modification of solids: towards intelligent materialsTakagi, Toshinori et al. | 1998
- 42
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The role of defects during amorphization and crystallization processes in ion implanted SiMotooka, T. et al. | 1998
- 50
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Implantation damage and epitaxial regrowth of silicon studied by differential reflectometryHummel, R.E. et al. | 1998
- 62
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Structure and properties of ion-beam-modified (^6H) silicon carbideWeber, W. J. / Wang, L. M. / Yu, N. / Hess, N. J. et al. | 1998
- 62
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Structure and properties of ion-beam-modified (6H) silicon carbide eWeber, W.J. et al. | 1998
- 71
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Stress, hydration, and optical absorption in ion-implanted aluminum oxideArnold, G.W. et al. | 1998
- 78
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A comparison between the irradiation damage response of spinel and zirconia due to Xe ion bombardmentSickafus, Kurt E. et al. | 1998
- 86
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Modification of silicon nitride ceramics with high intensity pulsed ion beamsBrenscheidt, F. et al. | 1998
- 94
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Ion beam modification of ceramicsMcHargue, Carl J. et al. | 1998
- 106
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Amorphization of ceramic materials by ion beam irradiationWang, L.M. et al. | 1998
- 114
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Modified structure of sapphire with 51V ion implantation followed by thermal annealingNaramoto, Hiroshi et al. | 1998
- 121
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Tailoring of the properties of ferrites by latent track productionCostantini, J.M. et al. | 1998
- 131
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Radiation response of FeTiO3, MgTiO3, and a-Al2O3Devanathan, R. et al. | 1998
- 131
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Radiation response of FeTiO~3, MgTiO~3, and -Al~2O~3Devanathan, R. / Mitchell, J. N. / Sickafus, K. E. / Weber, W. J. / Nastasi, M. et al. | 1998
- 135
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Nitride layers formed by nitrogen implantation into metalsMiyagawa, Y. et al. | 1998
- 143
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Formation of Si3N4 and SiC composite by nitrogen implantationMiyagawa, S. et al. | 1998
- 148
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Climb of dislocations in GaAs by irradiationYonenaga, I. et al. | 1998
- 151
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Measurement of mechanical properties by ultra-low load indentationPharr, G.M. et al. | 1998
- 160
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Mechanical property characterisation of small volumes of brittle materials with spherical tipped indentersSwain, M.V. et al. | 1998
- 167
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Comparison of implantation with Ni2+ and Au2+ ions on the indentation response of sapphireNowak, R. et al. | 1998
- 178
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A new approach to thermal-spike sputtering with ions and laser pulsesKelly, Roger et al. | 1998
- 194
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Mechanisms of ion beam induced atomic mixing in solidsBolse, Wolfgang et al. | 1998
- 202
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The influence of stress during ion beam mixingNastasi, M. et al. | 1998
- 212
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Metastable materials formation by ion beam assisted deposition: application to metal clusters in ceramic matricesHubler, G.K. et al. | 1998
- 221
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Ion beam deposition and surface characterization of thin multi-component oxide films during growthKrauss, A.R. et al. | 1998
- 234
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Microstructure and composition of titanium nitride formed by ion beam enhanced nitrogen sorption of evaporated titanium under argon ion irradiationEnsinger, W. et al. | 1998
- 240
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The role of defect excesses in damage formation in Si during ion implantation at elevated temperatureHolland, O.W. et al. | 1998
- 249
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Non-linear processes in the gas cluster ion beam modification of solid surfacesYamada, I. et al. | 1998
- 258
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Semiconductor processing by plasma immersion ion implantationEnsinger, W. et al. | 1998
- 269
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusionAgarwal, Aditya et al. | 1998
- 275
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Ion implantation as a tool in the synthesis of practical third-order nonlinear optical materialsHaglund, Richard F. et al. | 1998
- 284
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Formation of polycrystalline b-FeSi2 layers by ion-implantation and their optical propertiesKakemoto, Hirofumi et al. | 1998
- 284
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Formation of polycrystalline -FeSi~2 layers by ion-implantation and their optical propertiesKakemoto, H. / Katsumata, H. / Takada, T. / Tsai, Y.-S. / Hasegawa, M. / Sakuragi, S. / Kobayashi, N. / Makita, Y. / Tsukamoto, T. / Uekusa, S.-I. et al. | 1998
- 292
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Potassium niobate waveguides: He+ implantation in bulk single crystals and pulsed laser deposition of thin filmsBeckers, L. et al. | 1998
- 296
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Relaxation phenomena in keV-ion implanted hydrogenated amorphous silicon carbideMusumeci, P. et al. | 1998
- 301
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Low-energy nitrogen-ion doping into GaAs and its optical propertiesShima, Takayuki et al. | 1998
- 306
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Optical and electrical properties of Si+ ion-implanted GaAsShima, T. et al. | 1998
- 310
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Microstructural changes in ion implanted titanium nitridePerry, Anthony J. et al. | 1998
- 319
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Effect of nitrogen ion-implantation on the tribological properties and hardness of TiN filmsManory, R.R. et al. | 1998
- 328
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Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ionsNowak, R. et al. | 1998