Application of dichromated gelatin for dry developed lithographic techniques on GaAs (English)
- New search for: Villalvilla, J. M.
- New search for: Valles-Abarca, J. A.
- New search for: Quintana, J. A.
- New search for: Crespo, J.
- New search for: Villalvilla, J. M.
- New search for: Valles-Abarca, J. A.
- New search for: Quintana, J. A.
- New search for: Crespo, J.
In:
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE
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17
, 3
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1085-1086
;
1999
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ISSN:
- Article (Journal) / Print
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Title:Application of dichromated gelatin for dry developed lithographic techniques on GaAs
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Contributors:Villalvilla, J. M. ( author ) / Valles-Abarca, J. A. ( author ) / Quintana, J. A. ( author ) / Crespo, J. ( author )
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Published in:
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Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
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Publication date:1999-01-01
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Size:2 pages
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ISSN:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.55
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.55 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 17, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 905
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Alignment with exposed resist in photolithographyBurm, J. / Tate, A. / Kopf, R. F. / Ryan, R. W. / Hamm, R. A. / Chirovsky, L. M. et al. | 1999
- 908
-
Spatial frequency analysis of optical lithography resolution enhancement techniquesBrueck, S. R. J. / Chen, Xiaolan et al. | 1999
- 921
-
Experimental comparison of off-axis illumination and imaging interferometric lithographyChen, Xiaolan / Brueck, S. R. J. et al. | 1999
- 930
-
Amorphous carbon films for use as both variable-transmission apertures and attenuated phase shift masks for deep ultraviolet lithographyWindt, David L. / Cirelli, Raymond A. et al. | 1999
- 933
-
High resolution organic resists for charged particle lithographyOchiai, Yukinori / Manako, Shoko / Fujita, Jun-ichi / Nomura, Eiichi et al. | 1999
- 939
-
Formation and growth of on (001)Si inside 0.2–2 μm oxide openings prepared by electron-beam lithographyYew, J. Y. / Chen, L. J. / Wu, W. F. et al. | 1999
- 945
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Focused ion-beam structuring of Si and heterostructures using adsorbed hydrogen as a resistFuhrmann, H. / Döbeli, M. / Mühle, R. / Suter, M. et al. | 1999
- 949
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Formation and micromachining of Teflon (fluorocarbon polymer) film by a completely dry process using synchrotron radiationInayoshi, Muneto / Ito, Masafumi / Hori, Masaru / Goto, Toshio / Hiramatsu, Mineo et al. | 1999
- 957
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Novel process for selective etching using a novel gas source for preventing global warmingFujita, Kazushi / Ito, Masafumi / Hori, Masaru / Goto, Toshio et al. | 1999
- 961
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Model for etch depth dependence on GaAs via hole diameterAbraham-Shrauner, Barbara / Nordheden, Karen J. / Lee, Yao-Sheng et al. | 1999
- 965
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Inductively coupled plasma etching of III–V antimonides in andZhang, L. / Lester, L. F. / Shul, R. J. / Willison, C. G. / Leavitt, R. P. et al. | 1999
- 970
-
Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111)Wallace, Robert M. / Wei, Yi et al. | 1999
- 978
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Nanometer-scale Si-selective epitaxial growth using an ultrathin maskMiyata, Noriyuki / Watanabe, Heiji / Ichikawa, Masakazu et al. | 1999
- 983
-
Adsorption of atomic hydrogen on the Si(001) 4x3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopyRyu, J. T. / Fuse, T. / Kubo, O. / Fujino, T. / Tani, H. / Harada, T. / Saranin, A. A. / Zotov, A. V. / Katayama, M. / Oura, K. et al. | 1999
- 983
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Adsorption of atomic hydrogen on the Si(001) 4×3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopyRyu, J. T. / Fuse, T. / Kubo, O. / Fujino, T. / Tani, H. / Harada, T. / Saranin, A. A. / Zotov, A. V. / Katayama, M. / Oura, K. et al. | 1999
- 989
-
Microstructure characterization of oxidized nanocrystalline Si:H film by transmission electron microscopyLu, Hai / Liu, Jianhong / Li, Wei / Chen, Kunji / Huang, Xinfan et al. | 1999
- 994
-
Multiple layers of silicon-on-insulator for nanostructure devicesNeudeck, Gerold W. / Pae, Sangwoo / Denton, John P. / Su, Tai-chi et al. | 1999
- 999
-
Role of film conformality in charging damage during plasma-assisted interlevel dielectric depositionHwang, Gyeong S. / Giapis, Konstantinos P. et al. | 1999
- 1003
-
Growth, optical, and electron transport studies across isotype n-GaAs/n-Ge heterojunctionsHudait, Mantu Kumar / Krupanidhi, S. B. et al. | 1999
- 1011
-
Multiwafer gas source molecular beam epitaxial system for production technologyIzumi, Shigekazu / Kouji, Yoshiharu / Hayafuji, Norio et al. | 1999
- 1017
-
Improvement of properties of dynamic random access memories capacitors by plasma doping process after the formation of hemispherical-grained siliconMoon, H. S. / Choi, H. S. / Jang, H. G. / Hwang, C. J. / Woo, S. H. / Han, I. K. / Yang, H. S. et al. | 1999
- 1022
-
Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operationBoos, J. B. / Bennett, B. R. / Kruppa, W. / Park, D. / Mittereder, J. / Bass, R. / Twigg, M. E. et al. | 1999
- 1028
-
Formation of W underlayer by switching bias sputtering to plug 0.25 μm contact holesOnuki, Jin / Nihei, Masayasu / Suwa, Masateru / Goshima, Hidekazu et al. | 1999
- 1034
-
Au/Ge-based Ohmic contact to an AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layerLee, Jong-Lam / Kim, Yi-Tae / Yoo, Hyung Mo / Lee, Gi Young et al. | 1999
- 1040
-
B implantation in 6H–SiC: Lattice damage recovery and implant activation upon high-temperature annealingValcheva, E. / Paskova, T. / Ivanov, I. G. / Yakimova, R. / Wahab, Q. / Savage, S. / Nordell, N. / Harris, C. I. et al. | 1999
- 1045
-
Plasma enhanced chemically vapor deposited thin films for microelectromechanical systems applications with tailored optical, thermal, and mechanical propertiesHorn, M. W. / Goodman, R. B. / Rothschild, M. et al. | 1999
- 1050
-
Double exchange-related interfacial tunneling and the corresponding giant magnetoresistance in granular perovskitesZhang, Ning / Zhong, Wei / Ding, Weiping et al. | 1999
- 1056
-
Development of an Er–Ni liquid alloy ion sourceChao, L. C. / Steckl, A. J. et al. | 1999
- 1059
-
Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission propertiesWu, Kehui / Wang, E. G. / Chen, J. / Xu, N. S. et al. | 1999
- 1064
-
Field emission spectroscopy from discharge activated chemical vapor deposition diamondGröning, O. / Küttel, O. M. / Gröning, P. / Schlapbach, L. et al. | 1999
- 1072
-
Field emission properties of the polycrystalline diamond-coated silicon emittersYang, Su-Hua / Yokoyama, Meiso et al. | 1999
- 1076
-
Mechanism of efficient and stable silicon films surface-emitting Cold cathode based on porous polycrystallineKomoda, T. / Sheng, X. / Koshida, N. et al. | 1999
- 1076
-
Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon filmsKomoda, Takuya / Sheng, Xia / Koshida, Nobuyoshi et al. | 1999
- 1080
-
High pressure, high temperature scanning tunneling microscopyJensen, John A. / Rider, Keith B. / Chen, Yong / Salmeron, Miquel / Somorjai, Gabor A. et al. | 1999
- 1085
-
Application of dichromated gelatin for dry developed lithographic techniques on GaAsVillalvilla, J. M. / Vallés-Abarca, J. A. / Quintana, J. A. / Crespo, J. et al. | 1999
- 1087
-
Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using atomsHill, S. B. / Haich, C. A. / Dunning, F. B. / Walters, G. K. / McClelland, J. J. / Celotta, R. J. / Craighead, H. G. / Han, J. / Tanenbaum, D. M. et al. | 1999
- 1090
-
Collapse behavior of microresist pattern analyzed by the tip indentation method with an atomic force microscopeKawai, Akira et al. | 1999
- 1094
-
Novel metallization technique for filling 100-nm-wide trenches and vias with very high aspect ratioMonteiro, Othon R. et al. | 1999
- 1098
-
Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surfaceMurata, Kazuya / Ito, Masafumi / Hori, Masaru / Goto, Toshio et al. | 1999
- 1101
-
Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallizationKelsey, Jean E. / Goldberg, Cindy / Nuesca, Guillermo / Peterson, Gregory / Kaloyeros, Alain E. / Arkles, Barry et al. | 1999
- 1105
-
Ordering of quantum dots self-organized on GaAs(311)B substratesLan, S. / Akahane, K. / Song, H. Z. / Okada, Y. / Kawabe, M. et al. | 1999
- 1116
-
Growth and electroluminescent properties of self-organized quantum dots grown on siliconLinder, K. K. / Phillips, J. / Qasaimeh, O. / Liu, X. F. / Krishna, S. / Bhattacharya, P. et al. | 1999
- 1120
-
Improved size uniformity of InAs quantum dots grown on a lateral composition modulated InGaAs surfaceWohlert, D. E. / Cheng, K. Y. / Chang, K. L. / Hsieh, K. C. et al. | 1999
- 1124
-
Long-wavelength luminescence from quantum dots grown by migration enhanced epitaxyBaklenov, O. / Nie, H. / Campbell, J. C. / Streetman, B. G. / Holmes, A. L. et al. | 1999
- 1127
-
Strained InGaAs/AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxyShimomura, S. / Ohta, K. / Tatsuoka, Y. / Hiyamizu, S. / Fujita, K. / Egami, N. et al. | 1999
- 1131
-
Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substratesHoke, W. E. / Lemonias, P. J. / Mosca, J. J. / Lyman, P. S. / Torabi, A. / Marsh, P. F. / McTaggart, R. A. / Lardizabal, S. M. / Hetzler, K. et al. | 1999
- 1136
-
InP-collector double-heterojunction bipolar transistors by valved phosphorus crackerChin, T. P. / Gutierrez-Aitken, A. L. / Cowles, J. / Kaneshiro, E. N. / Han, A. C. / Block, T. R. / Oki, A. K. / Streit, D. C. et al. | 1999
- 1139
-
Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxyKuo, H. C. / Moser, B. G. / Hsia, H. / Tang, Z. / Feng, M. / Stillman, G. E. / Lin, C. H. / Chen, H. et al. | 1999
- 1144
-
Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxyYang, X. / Heroux, J. B. / Jurkovic, M. J. / Wang, W. I. et al. | 1999
- 1147
-
Fabrication and characterization of a two-dimensional electron gas in modulation doped quantum wellsKnobel, R. / Smorchkova, I. P. / Samarth, N. et al. | 1999
- 1151
-
Study of factors limiting electron mobility in InSb quantum wellsChung, S. J. / Goldammer, K. J. / Lindstrom, S. C. / Johnson, M. B. / Santos, M. B. et al. | 1999
- 1155
-
quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxyTatsuoka, Yasuaki / Kamimoto, Hitoshi / Kitano, Yoshiaki / Kitada, Takahiro / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 1999
- 1158
-
Analysis of excitonic absorption properties and their electric field dependence in chemical beam epitaxy-grown InAsP/InP multiple quantum wellsMonier, C. / Serdiukova, I. / Aguilar, L. / Newman, F. / Vilela, M. F. / Freundlich, A. et al. | 1999
- 1163
-
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAsSandhu, R. S. / Bhasin, G. / Moore, C. D. / U’Ren, G. D. / Goorsky, M. S. / Chin, T. P. / Wojtowicz, M. / Block, T. R. / Streit, D. C. et al. | 1999
- 1167
-
Larger critical thickness determined by photoluminescence measurements in pseudomorphic quantum well grown on (411)A GaAs substrates by molecular beam epitaxyNii, K. / Kuriyama, R. / Hiraoka, T. / Kitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 1999
- 1171
-
Photonic band-gap waveguide microcavities: Monorails and air bridgesLim, Kuo-Yi / Ripin, D. J. / Petrich, G. S. / Kolodziejski, L. A. / Ippen, E. P. / Mondol, M. / Smith, Henry I. / Villeneuve, P. R. / Fan, S. / Joannopoulos, J. D. et al. | 1999
- 1175
-
Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxyLenox, C. / Nie, H. / Kinsey, G. / Hansing, C. / Campbell, J. C. / Holmes, A. L. / Streetman, B. G. et al. | 1999
- 1180
-
A comparative study of carbon incorporation in heavily doped GaAs and grown by solid-source molecular beam epitaxy using carbon tetrabromideLubyshev, D. / Micovic, M. / Gratteau, N. / Cai, W.-Z. / Miller, D. L. / Ray, O. / Streater, R. W. / SpringThorpe, A. J. et al. | 1999
- 1185
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Growth of carbon doping using by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applicationsKuo, H. C. / Ahmari, D. / Moser, B. G. / Mu, J. / Hattendorf, M. / Scott, D. / Meyer, R. / Feng, M. / Stillman, G. E. et al. | 1999
- 1190
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Heavily carbon-doped on InP (001) substrate grown by solid source molecular beam epitaxyCai, W. Z. / Lubyshev, D. I. / Miller, D. L. / Streater, R. W. / SpringThorpe, A. J. et al. | 1999
- 1195
-
Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substratesBirkhahn, R. / Hudgins, R. / Lee, D. / Steckl, A. J. / Molnar, R. J. / Saleh, A. / Zavada, J. M. et al. | 1999
- 1200
-
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and CSpecht, P. / Lutz, R. C. / Zhao, R. / Weber, E. R. / Liu, W. K. / Bacher, K. / Towner, F. J. / Stewart, T. R. / Luysberg, M. et al. | 1999
- 1200
-
Improvement of molecular beam epitaxy-grown Iow-temperature GaAs through p doping with Be and CSpecht, P. / Lutz, R. C. / Zhao, R. / Weber, E. R. / Liu, W. K. / Bacher, K. / Towner, F. J. / Stewart, T. R. / Luysberg, M. et al. | 1999
- 1205
-
Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxyYang, B. / Aqariden, F. / Grein, C. H. / Jandaska, A. / Lee, T. S. / Nemani, A. / Rujirawat, S. / Shi, X. H. / Sumstine, M. / Velicu, S. et al. | 1999
- 1209
-
In Situ Monitoring and Characterization In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ionsKim, E. / Berishev, I. / Bensaoula, A. / Schultz, J. A. et al. | 1999
- 1209
-
In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ionsKim, E. / Berishev, I. / Bensaoula, A. / Schultz, J. A. et al. | 1999
- 1214
-
Refractive index measurements of ZnSe-based ternary epitaxial layers grown by molecular-beam epitaxy on GaAs (100)Peiris, F. C. / Lee, S. / Bindley, U. / Furdyna, J. K. et al. | 1999
- 1218
-
In situ monitoring of AlGaAs compositions and GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopyTaferner, W. T. / Mahalingam, K. / Dorsey, D. L. / Eyink, K. G. et al. | 1999
- 1223
-
Temperature-composition determination based on modeling of optical constants of III-V compound semiconductors measured by spectroscopic ellipsometryGrassi, Elena / Johnson, Shane R. / Beaudoin, Mario / Tsakalis, Kostas S. et al. | 1999
- 1227
-
Low-temperature molecular beam epitaxy of GaAs: A theoretical investigation of antisite incorporation and reflection high-energy diffraction oscillationsNatarajan, K. / Venkat, R. / Dorsey, D. L. et al. | 1999
- 1233
-
Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layersBeaudoin, M. / Johnson, S. R. / Boonzaayer, M. D. / Zhang, Y.-H. / Johs, B. et al. | 1999
- 1237
-
Closed-loop control of composition and temperature during the growth of InGaAs lattice matched to InPJohnson, S. R. / Grassi, E. / Beaudoin, M. / Boonzaayer, M. D. / Tsakalis, K. S. / Zhang, Y. H. et al. | 1999
- 1241
-
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphirePiquette, E. C. / Bridger, P. M. / Bandić, Z. Z. / McGill, T. C. et al. | 1999
- 1246
-
Molecular beam epitaxy growth of boron-containing nitridesGupta, V. K. / Wamsley, C. C. / Koch, M. W. / Wicks, G. W. et al. | 1999
- 1249
-
Native oxides and regrowth on III–N surfacesGupta, V. K. / Wamsley, C. C. / Koch, M. W. / Wicks, G. W. et al. | 1999
- 1252
-
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructuresMurphy, M. J. / Chu, K. / Wu, H. / Yeo, W. / Schaff, W. J. / Ambacher, O. / Smart, J. / Shealy, J. R. / Eastman, L. F. / Eustis, T. J. et al. | 1999
- 1255
-
Defect reduction of based structures grown on InP by using Zn irradiation of the III–V surfaceZeng, L. / Guo, S. P. / Luo, Y. Y. / Lin, W. / Tamargo, M. C. / Xing, H. / Cargill, G. S. et al. | 1999
- 1259
-
Growth of ZnSe and ZnS films on Si(111) substrates with a nitrogen surface treatmentMéndez-Garcı́a, V. H. / López-López, M. / Hernández-Calderón, I. et al. | 1999
- 1263
-
Molecular beam epitaxy growth of PbSe on -coated Si(111) and observation of the PbSe growth interfaceWu, H. Z. / Fang, X. M. / Salas, R. / McAlister, D. / McCann, P. J. et al. | 1999
- 1267
-
Effect of an buffer layer on InSb thin film mobilityPartin, D. L. / Heremans, J. / Thrush, C. M. et al. | 1999
- 1272
-
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxyMars, D. E. / Babic, D. I. / Kaneko, Y. / Chang, Ying-Lan / Subramanya, Sudhir / Kruger, Joachim / Perlin, Piotr / Weber, Eicke R. et al. | 1999
- 1276
-
Electron intersubband energy level spacing in self-organized quantum dot lasers from temperature-dependent modulation measurementsKlotzkin, D. / Phillips, J. / Jiang, H. / Singh, J. / Bhattacharya, P. et al. | 1999
- 1281
-
Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition sourcePostigo, P. A. / Lullo, G. / Choy, K. H. / Fonstad, C. G. et al. | 1999
- 1285
-
InGaAs/GaAs/AlGaAs GRIN-SCH quantum-well lasers grown by solid-source molecular-beam epitaxy using dopingGratteau, Navid / Lubyshev, D. / Miller, D. L. et al. | 1999
- 1289
-
Growth and characterization of epitaxial and structuresSacks, R. N. / Qin, L. / Jazwiecki, M. / Ringel, S. A. / Clevenger, Marvin B. / Wilt, David / Goorsky, M. S. et al. | 1999
- 1294
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Passivation of GaAs using gallium-gadolinium oxidesKwo, J. / Murphy, D. W. / Hong, M. / Mannaerts, J. P. / Opila, R. L. / Masaitis, R. L. / Sergent, A. M. et al. | 1999
- 1297
-
Molecular beam epitaxy of periodic layers on Si(111)Fang, X. M. / Wu, H. Z. / Shi, Z. / McCann, P. J. / Dai, N. et al. | 1999
- 1301
-
Molecular beam epitaxy growth of alloys on Si (100) with high carbon contentsRoe, K. J. / Dashiell, M. W. / Kolodzey, J. / Boucaud, P. / Lourtioz, J.-M. et al. | 1999