Characterization of Zn Composition in Cd~1~-~xZn~xTe by Room Temperature Micro-Photoluminescence Mapping (Unknown)
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In:
CHINESE JOURNAL OF SEMICONDUCTORS -CHINESE EDITION-
;
22
;
177-181
;
2001
-
ISSN:
- Article (Journal) / Print
-
Title:Characterization of Zn Composition in Cd~1~-~xZn~xTe by Room Temperature Micro-Photoluminescence Mapping
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Contributors:Li, Z.-f. ( author ) / Lu, W. ( author ) / Cai, W.-y. ( author ) / Huang, G.-s. ( author ) / Yang, J.-r. ( author ) / He, L. ( author ) / Shen, X.-c. ( author )
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Published in:CHINESE JOURNAL OF SEMICONDUCTORS -CHINESE EDITION- ; 22 ; 177-181
-
Publisher:
- New search for: KEXUE CLUBANSHE
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Publication date:2001-01-01
-
Size:5 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
- New search for: 621.38152
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Classification:
DDC: 621.38152 -
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© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 22
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Optimal Stack Generation for CMOS Analog Modules with Parasitic and Mismatch ConstraintsZeng, X. / Li, M.-y. / Zhao, W.-q. / Tang, P.-s. / Zhou, D. et al. | 2001
- 11
-
Approximate Well Width and Optical Gain Formulas of 1.55mum In~1~-~x~-~yGa~yAl~zAs Compressively Strained Quantum-well LaserZhang, Y.-j. / Chen, W.-y. / Jiang, H. / Liu, C.-x. / Liu, S.-y. et al. | 2001
- 18
-
Dependence of R-G Current on Bulk Traps Characteristics and Silicon Film Structure in SOI Gated-DiodeHe, J. / Huang, R. / Zhang, X. / Sun, F. / Wang, Y.-y. et al. | 2001
- 25
-
Degradation of P-MOSFETs Under Off-State StressYang, C.-y. / Wang, Z.-o. / Tan, C.-h. / Xu, M.-z. et al. | 2001
- 31
-
Characterization of GaNAs/GaAs and GaInNAs/GaAs Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion DamageLi, L.-h. / Pan, Z. / Zhang, W. / Lin, Y.-w. / Wang, X.-y. / Wu, R.-h. et al. | 2001
- 35
-
Determination of Structure and Polarity of SiC Single Crystal by X-Ray Diffraction TechniqueZheng, X.-h. / Qu, B. / Wang, Y.-t. / Yang, H. / Liang, J.-w. et al. | 2001
- 40
-
GSMBE-Grown 1.8-2.0 Micron Waveband InGaAs/InGaAsP Strained Quantum Well LasersBai, J.-s. / Fang, Z.-j. / Zhang, Y.-m. / Zhang, W.-z. / Chen, G.-t. / Li, A.-z. / Chen, J.-x. et al. | 2001
- 47
-
Development of CMOS/SOI 64Kb SRAMLiu, X.-y. / Han, Z.-s. / Zhou, X.-y. / Hai, C.-h. / Liu, Z.-l. / Wu, D.-x. et al. | 2001
- 53
-
Strain Compensation Effects of Si~1~-~x~-~yGe~zC~y AlloysYu, Z. / Li, D.-z. / Cheng, B.-w. / Huang, C.-j. / Lei, Z.-l. / Yu, J.-z. / Wang, Q.-m. / Liang, J.-w. et al. | 2001
- 57
-
Ni-Induced Lateral Crystallization of Amorphous Silicon Thin Films and Its CharacterizationQin, M. / Poon, V. M. C. et al. | 2001
- 61
-
Preparation and Characterization of Poly-Crystalline Si Films Obtained by Metal Induced Crystallization at Low TemperatureLiu, C.-z. / Yang, B.-l. / Yuan, J.-f. / Li, M.-j. / Wu, Y. / Liao, Y.-p. / Zhang, Y. / Wang, D.-h. / Huang, K.-m. et al. | 2001
- 66
-
Deposition of Cubic Boron Nitride Thin Films with Wide Energy GapDeng, J.-x. / Wang, B. / Yan, H. / Chen, G.-h. et al. | 2001
- 69
-
Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASHSu, Y. / Zhu, J. / Chen, Y.-c. / Pan, L.-y. / Liu, Z.-h. et al. | 2001
- 74
-
Theoretical Analysis of Current Gain of PNP AlGaAs/GaAs Heterojunction Bipolar Transistors with Emitter-Base-Emitter StructureYan, B.-p. / Zhang, H.-m. / Dai, X.-y. et al. | 2001
- 79
-
HFET Small Signal Model Extraction from S Parameters Using Simulated Annealing AlgorithmChen, J. / Liu, X.-c. et al. | 2001
- 83
-
a-Si TFT/PIN Coupled-Pair SensorsZhao, Y. / Xiong, S.-z. / Li, J. / Zhou, Z.-h. / Li, J.-f. et al. | 2001
- 91
-
Design of a 32-Bit CMOS Fix Floating Point MultiplierYu, D.-s. / Shen, X.-b. et al. | 2001
- 96
-
ECOP: A Row-Partition Based Incremental Placement Algorithm for Standard Cell Layout DesignYu, H. / Yao, B. / Hong, X.-l. / Cai, Y.-c. et al. | 2001
- 102
-
Analysis and Simulation of Effect of Pinhole Defects on Integrated Circuits Functional YieldMa, P.-j. / Hao, Y. / Liu, H.-x. et al. | 2001
- 107
-
Thermal Cycle Failure of SnPb Solder Joint for Flip Chip Package and Effects of Underfill MaterialChen, L. / Zhang, Q. / Wang, G.-z. / Xie, X.-m. / Cheng, Z.-n. et al. | 2001
- 113
-
Design and Characteristics of InGaAs/GaAs MQW SEED Arrays StructureDeng, H. / Chen, H.-d. / Liang, K. / Du, Y. / Tang, J. / Huang, Y.-z. / Pan, Z. / Ma, X.-y. / Wu, R.-h. / Wang, Q.-m. et al. | 2001
- 117
-
Comparison of Mode Quality Factors for Equilateral Triangular, Square and Rhombus Optical Micro-ResonatorsHuang, Y.-z. / Guo, W.-h. et al. | 2001
- 121
-
GeSi Source/Drain Structure for Suppression of Short Channel Effect in SOI p-MOSFET'sHuang, R. / Bu, W.-h. / Wang, Y.-y. et al. | 2001
- 126
-
GSMBE-Grown InGaAs/InGaAsP Strained Quantum Well Lasers at 1.84 Micron WavelengthBai, J.-s. / Fang, Z.-j. / Zhang, Y.-m. / Chen, G.-t. / Li, A.-z. / Chen, J.-x. et al. | 2001
- 130
-
Ridge Waveguide Electro-Optic Polymer Modulator with a New Kind of Corona Poled Crosslinkable PolyurethaneYang, X.-h. / Du, Y. / Yin, A.-m. / Shi, Z.-w. / Wu, R.-h. et al. | 2001
- 134
-
High Performance 70nm CMOS DevicesXu, Q.-x. / Qian, H. / Yin, H.-x. / Jia, L. / Ji, H.-h. / Chen, B.-q. / Zhu, Y.-j. / Liu, M. et al. | 2001
- 140
-
Theoretical Analysis on Bonding Energies for Silicon Direct BondingHan, W.-h. / Yu, J.-z. / Wang, Q.-m. et al. | 2001
- 145
-
DX-Like Centers in n-Type Al-Doped ZnS~1~-~xTe~x Grown by Molecular Beam EpitaxyLu, L.-w. / Zhang, Y.-h. / Mak, K. K. / Ma, Z. H. / Wang, J. / Sou, I. K. / Ge, W. et al. | 2001
- 151
-
Investigation on Etch Performance of Focused Ion BeamXie, J. / Jiang, S.-h. / Wang, J.-j. / Tang, L.-j. / Zong, X.-f. et al. | 2001
- 156
-
Charge to Breakdown of Thin Gate OxidesLiu, H.-x. / Hao, Y. et al. | 2001
- 161
-
Effects of Doping Al into SiO~2 on Electroluminescence from Au/Nanometer(SiO~2/Si/SiO~2)/p-Si StructureWang, S.-t. / Chen, Y. / Zhang, B.-r. / Qiao, Y.-p. / Qin, G.-g. / Ma, Z.-c. / Zong, W.-h. et al. | 2001
- 166
-
Properties of InGaN Layers Grown on Sapphire Substrates by MOCVDYan, H. / Lu, L.-w. / Wang, Z.-g. et al. | 2001
- 171
-
Fabrication of ZnTe: Cu Films and Their PropertiesZheng, J.-g. / Zhang, J.-q. / Cai, W. / Li, B. / Cai, Y.-p. / Feng, L.-h. et al. | 2001
- 177
-
Characterization of Zn Composition in Cd~1~-~xZn~xTe by Room Temperature Micro-Photoluminescence MappingLi, Z.-f. / Lu, W. / Cai, W.-y. / Huang, G.-s. / Yang, J.-r. / He, L. / Shen, X.-c. et al. | 2001
- 182
-
Optical Properties and Growth of Cubic GaN Buffer Layers on Sapphire by Radio Frequency Plasma CVDXiu, X.-q. / Nozaki, S. / Shimabukuro, J. / Ikegami, T. / Wang, D.-z. / Tang, H.-g. et al. | 2001
- 187
-
Effects of Sputtering Parameter on Optical Constants of Ge~2Sb~2Te~5 Thin FilmsXie, Q. / Hou, L.-s. / Ruan, H. / Gan, F.-x. / Li, J. et al. | 2001
- 193
-
Electrochromic Performance and Mechanism of Noncrystalline NiO~xH~y Thin Films Fabricated by Electrochemical DepositionFeng, B.-x. / Xie, L. / Cai, X.-m. / Jang, S.-r. / Gan, R.-j. et al. | 2001
- 196
-
Vacuum-Deposited Bilayer Organic Light-Emitting DiodesZhao, J.-q. / Xie, S.-j. / Han, S.-h. / Yang, Z.-w. / Ye, L.-n. / Yang, T.-l. et al. | 2001
- 203
-
I-V Characteristics of Ferroelectric Memory Diode with Structure of Au/PZT/BIT/p-SiYu, J. / Wang, H. / Dong, X.-m. / Zhou, W.-l. / Wang, Y.-b. / Zheng, Y.-k. / Zhao, J.-h. et al. | 2001
- 208
-
A New Simulated Charges Method to Calculate Interconnect Capacitance with Two Kinds of MediaZhu, Z.-m. / Xiao, X. / Ruan, G. / Song, R.-r. / Liu, Y. et al. | 2001
- 214
-
Automatic Waveform Generation Technique for Special Sequential Circuit in Logic Parameter ExtractionChen, S.-l. / He, X.-q. et al. | 2001
- 220
-
Development and Investigation of Air-Cooled Thermoelectric Air-ConditionerZhang, H.-j. / Dong, X.-j. / Tao, W.-q. / Feng, Q.-y. / Zou, T. et al. | 2001
- 224
-
Deterioration of Blue-Emission Electroluminescent Devices Made of Single Layer Polymer Thin FilmsYan, J.-l. / Zhu, C.-c. et al. | 2001
- 228
-
Estimate of Width of Transition Region of Barrier for Thin Film Insulator MOS Structure Using Fowler-Nordheim Tunneling CurrentMao, L.-f. / Tan, C.-h. / Xu, M.-z. et al. | 2001
- 234
-
Simulation on Structure and Performance of Grooved-Gate NMOSFETRen, H.-x. / Hao, Y. / Xu, D.-g. et al. | 2001
- 241
-
Calculation of Current Gain of Heterojunction Bipolar Transistor with Emitter-Edge Thinning DesignLiu, X.-w. / Zhang, R. / Wu, D.-x. et al. | 2001
- 247
-
Self-Aligned Structure AlGaAs/GaAs HBT with High Power DensityYan, B.-p. / Zhang, H.-m. / Dai, X.-y. et al. | 2001
- 251
-
Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing/Chemical Vapor DepositionJia, H.-y. / Lin, H.-w. / Chen, P.-y. / Tsien, P.-H. et al. | 2001
- 256
-
Equivalent Doping Transformation Method for Predicting Breakdown Voltage and Peak Field at Breakdown of Epitaxial-Diffused Punch-Through JunctionHe, J. / Zhang, X. / Huang, R. / Wang, Y.-y. et al. | 2001
- 261
-
Low-Cost, High-Reflectivity Silicon-on-Reflector for Optoelectronic Device ApplicationLi, C. / Yang, Q.-q. / Wang, H.-j. / Wang, Q.-m. et al. | 2001
- 265
-
Fabrication of 4H-SiC Merged PN-Schottky DiodesZhang, Y.-m. / Alexandrov, P. / Zhao, J. H. et al. | 2001
- 271
-
A Novel Barrier to Copper Metallization by Implanting Nitrogen into SiO~2Zhang, G.-h. / Xia, Y. / Qian, H. / Gao, W.-f. / Yu, G.-h. / Long, S.-b. et al. | 2001
- 275
-
A New Congestion-Driven Placement Algorithm Based on Cell InflationHou, W.-t. / Yu, H. / Hong, X.-l. / Cai, Y.-c. / Wu, W.-m. / Gu, J. et al. | 2001
- 287
-
Ballistic Transport in Y-Typed Quantum ChannelsWang, C.-k. / Jiang, Z.-t. et al. | 2001
- 291
-
Distribution of Carriers in GeSi/Si Multiple Hetero-EpilayersZhang, X.-l. / Zhu, W.-z. / Huang, D.-d. et al. | 2001
- 294
-
Measurement of Minority Carrier Lifetime on Silicon Wafers with Collinear Four-Probe ArrayZhou, Q.-d. et al. | 2001
- 298
-
Excited-State Lasing of InAs/GaAs Self-Organized Quantum DotWang, H. / Niu, Z.-c. / Wang, H.-l. / Wang, X.-d. / Feng, S.-l. et al. | 2001
- 303
-
Optical Properties of C~6~0 Thin Films Deposited on Fluorophlogopite SubstratesZou, Y.-j. / Zhang, X.-w. / Song, X.-m. / Yan, H. / Cheng, G.-h. et al. | 2001
- 308
-
Mechanical Strength Research by Three-Point Bending Method in Nitrogen-Doped Silicon Single CrystalWang, G. / Yang, D.-r. / Li, D.-s. / Yang, H. / Li, L.-b. / Que, D.-l. et al. | 2001
- 312
-
Monocrystalline Silicon and Ge-Doped Si Growth with Ring Permanent Magnetic FieldZhang, W.-l. / Sun, J.-s. / Zhang, E.-h. / Li, J.-x. et al. | 2001
- 316
-
Preparation of Single Phase Hexagonal GaN on GaAs (100) Substrate by MOCVDSun, Y.-j. / Li, A.-z. / Qi, M. et al. | 2001
- 321
-
Low Temperature Silicon and Silicon Germanium Doping Epitaxy by HV/CVDLiu, Z.-n. / Jia, H.-y. / Luo, G.-l. / Chen, P.-y. / Lin, H.-w. / Tsien, P.-H. et al. | 2001
- 328
-
Proportional Difference Characteristics of Complete Current ModelYang, C.-y. / Tan, C.-h. / Xu, M.-z. et al. | 2001
- 334
-
An SOI MOSFET Model for Analog Circuit DesignLiao, H.-L. / Zhang, X. / Huang, R. / Wang, Y.-Y. et al. | 2001
- 339
-
Effects of DBR on the Properties of Semiconductor MicrocavityLiu, B.-l. / Wang, B.-s. / Xu, Z.-y. et al. | 2001
- 344
-
Characterization Method for Proportional Diffenerence Characteristic of MOSFET DevicesWang, J.-y. / Xu, M.-z. / Tan, C.-h. et al. | 2001
- 349
-
Very High Speed Poly-Si Emitter Bipolar Transistor and CircuitJin, H.-y. / Zhang, L.-c. / Gao, Y.-z. / Ni, X.-w. / Mo, B.-x. / Ning, B.-j. / Luo, K. / Ye, H.-f. / Zhao, B.-y. / Zhang, G.-q. et al. | 2001
- 353
-
S-Band 0.3W AlGaAs/GaAs HBT for Power ApplicationYan, B.-p. / Zhang, H.-m. / Dai, X.-y. et al. | 2001
- 357
-
Fabrication of Si Radiation Detector with Plane TechnologyZhang, T.-p. / Zhang, L. / Ning, B.-j. / Tian, D.-y. / Liu, S.-m. / Wang, W. / Zhang, J.-t. / Guo, Z.-q. / Chen, S.-y. et al. | 2001
- 361
-
Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to RadiationWan, X.-h. / Zhang, X. / Huang, R. / Gan, X.-w. / Wang, Y.-y. et al. | 2001
- 365
-
Novel High-Performance CMOS Current Comparator CircuitChen, L. / Shi, B.-x. / Lu, C. et al. | 2001
- 372
-
Adiabatic CMOS Switching Circuits Adopting Two-Phase Power-Clock Supply and Avoiding Floating OutputHang, G.-q. / Wu, X.-w. et al. | 2001
- 377
-
Circuit Model for TW Semiconductor Laser AmplifiersChen, W.-y. / Wang, A.-j. / Zhang, Y.-j. / Liu, C.-x. / Liu, S.-y. et al. | 2001
- 382
-
A Programmable Hamming Neural Network Feature ExtractorLi, G.-x. / Shi, B.-x. et al. | 2001
- 386
-
300mm Crystal Silicon's Growth TechnolologyZhang, G.-h. / Wu, Z.-q. / Fang, F. / Qin, F. / Chang, Q. / Zhou, Q.-g. / Tu, H.-l. et al. | 2001
- 387
-
The Recent Progress of On-Chip Optical Interconnects for Integrated CircuitsRuan, G. / Xiao, X. / Streiter, R. / Chen, Z.-t. / Otto, T. / Gessner, T. et al. | 2001
- 398
-
Measurement of Refractive Indices of (Al~xGa~1~-~x)~0~.~5~1In~0~.~4~9P Grown by Low Pressure Organometallic Vapor Phase EpitaxyLian, P. / Ma, X.-y. / Zhang, G.-z. / Chen, L.-h. et al. | 2001
- 402
-
A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF DevicesHe, J. / Zhang, X. / Huang, R. / Wang, Y.-y. et al. | 2001
- 409
-
Optimization for Top DBR's Reflectivity in RCE PhotodectectorLiang, K. / Chen, H.-d. / Deng, H. / Du, Y. / Tang, J. / Wu, R.-h. et al. | 2001
- 414
-
SILC Mechanism in Degraded Gate Oxide of Different ThicknessWang, Z.-o. / Wei, J.-l. / Mao, L.-f. / Xu, M.-z. / Tan, C.-h. et al. | 2001
- 418
-
Investigation on Structure and Luminescence of ZnO: Tb NanocrystalsLiu, S.-m. / Liu, F.-q. / Guo, H.-q. / Zhang, Z.-h. / Wang, Z.-g. et al. | 2001
- 423
-
Luminescence Properties of Blue-Emission Polymer BlendsYan, J.-l. / Zhao, Y.-n. / Zhu, C.-c. et al. | 2001
- 427
-
Refined Atomic Structure of Si(111)-(√3 x √3)R30^o-Ga SurfaceDeng, B.-c. / Xu, G. / Chen, W.-h. / He, Y.-j. / Xie, M.-h. / Tong, S. Y. et al. | 2001
- 431
-
Photoluminescence of Undoped n-Type GaN EpilayerPeng, C.-t. / Chen, N.-f. / Lin, L.-y. / Ke, J. et al. | 2001
- 435
-
Periodic Structure and Quantum Size Effect of muc-Si: H/a-Si: H MultilayersXu, M. / Wang, H.-t. / Feng, L.-h. / Zhou, X.-m. / Cai, Y.-p. / Feng, J.-w. / Xu, N. / Mai, Z.-h. et al. | 2001
- 440
-
Growth of Large Diameter (phi40mm) HgCdTe Crystal By Pressure-Modified Bridgman MethodWang, Y. / Li, Q.-b. / Han, Q.-l. / Ma, Q.-h. / Song, B.-w. / Jie, W.-q. / Zhou, Y.-h. et al. | 2001
- 446
-
Semiconductor/Superlattice Distributed Bragg Reflector Grown by Molecular Beam EpitaxyYan, C.-l. / Zhao, Y.-j. / Zhong, J.-c. et al. | 2001
- 451
-
Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) SystemHan, Y.-z. / Li, B.-z. / Qu, X.-p. / Ru, G.-p. et al. | 2001
- 456
-
Electrical Determination of Bandgap Narrowing in Bipolar Transistors with Si and SiGe BasesJin, H.-y. / Zhang, L.-c. et al. | 2001
- 460
-
Numerical Algorithm of Scatter Parameters of Microwave TransistorQi, C.-j. / Wu, G.-h. / Wang, X.-h. / Li, G.-h. / Huang, C. et al. | 2001
- 465
-
Micromachined Convective AccelerometerLi, L.-j. / Liang, C.-g. et al. | 2001
- 469
-
A Novel CMOS Source-Follower Buffer CircuitYu, N.-m. / Yang, A. / Chen, Z.-m. / Gao, Y. et al. | 2001
- 476
-
0.1mum T-Shaped Gate PHEMT DeviceZheng, Y.-k. / Liu, M. / He, Z.-j. / Wu, D.-x. et al. | 2001
- 481
-
Optimization of Deep-Etched, Single-Mode GaAs/GaAlAs Optical Rib Waveguides Using Discrete Spectral Index MethodMa, H.-l. / Yang, J.-y. / Jiang, X.-q. / Wang, M.-h. et al. | 2001
- 486
-
Degradation Induced by Channel Hot-Carriers Effect in SOI NMOSFET'sHao, Y. / Zhu, J.-g. / Guo, L. / Zhang, Z.-f. et al. | 2001
- 491
-
Two Types of High Frequency Integrated CMOS Multivibrator Voltage-Controlled OscillatorZhang, C.-h. / Li, Y.-m. / Chen, H.-y. et al. | 2001
- 496
-
A Method of Verifying Simulated Steady Thermal Field of a Semiconductor DeviceZhang, H.-x. et al. | 2001
- 500
-
Integrated Pressure Sensor with Stress-Sensitive MOS Operational AmplifierYue, R.-f. / Liu, L.-t. / Li, Z.-j. et al. | 2001
- 503
-
Analysis of Dark Current Characteristic of Novel GaAs/AlGaAs Quantum Well Infrared PhotodetectorsShi, Y.-l. / Deng, J. / Du, J.-y. / Lian, P. / Gao, G. / Chen, J.-x. / Shen, G.-d. / Yin, J. / Wu, X.-h. et al. | 2001
- 507
-
Electrical Characterization of 6H-SiC pn DiodesWang, S.-r. / Liu, Z.-l. / Li, J.-m. / Wang, L.-c. / Xu, P. et al. | 2001
- 511
-
Resistivity Instability in Polysilic on Resistors Under Metal Interconnects and Its Suppression by Compensating Ion ImplantationYu, N.-m. / Gao, Y. / Chen, Z.-m. et al. | 2001
- 516
-
MARS: A General Multilayer Area RouterMa, Q. / Yan, X.-l. et al. | 2001
- 520
-
Optimization of High-Speed Interconnection Circuits with SQP in Time DomainCai, X.-j. / Mao, J.-f. / Qian, X.-n. / Chen, J.-h. et al. | 2001
- 529
-
Quantum Well Infrared Photodetectors: the Basic Design and New Research DirectionsLiu, H. C. et al. | 2001
- 538
-
Peculiar Nonlinear Depletion in Double-Layered Gated Si-delta-Doped GaAsLu, T.-c. / Lin, L.-b. / Levin, M. / Ginodman, V. / Shlimak, I. et al. | 2001
- 543
-
Deposition of Thick SiO~2 from Tetraethylothosilicate and H~2O by Plasma-Enhanced CVDLei, H.-b. / Wang, H.-j. / Deng, X.-q. / Yang, Q.-q. / Hu, X.-w. / Wang, Q.-m. / Liao, Z.-s. / Yang, J.-n. et al. | 2001
- 548
-
A Precise Model for Simulation of Temperature Distribution in Power ModulesGeng, L. / Chen, Z.-m. / Kruemmer, R. / Reimann, T. / Petzoldt, J. et al. | 2001
- 554
-
Trench MOS Controlled ThyristorZhang, H.-m. / Dai, X.-y. / Zhang, Y.-m. / Lin, D.-s. et al. | 2001
- 558
-
A Chip Level Thermal Analysis Algorithm Using Boundary Element MethodCui, M.-d. / Zhao, W.-q. / Tang, P.-s. et al. | 2001
- 565
-
A Novel Sub-50nm Poly-Si Gate Patterning TechnologyZhang, S.-d. / Han, R.-q. / Liu, X.-y. / Guang, X.-d. / Li, T. / Zhang, D.-c. et al. | 2001
- 569
-
Dependence of InGaN Photoluminescence on TemperatureFan, Z.-j. / Liu, X.-l. / Wan, S.-k. / Wang, Z.-g. et al. | 2001
- 573
-
Photoluminescence and Electroluminescence from Scored Si-Rich SiO~2 Film/p-Si StructureSun, Y.-k. / Cui, X.-m. / Zhang, B.-r. / Qin, G.-g. / Ma, Z.-c. / Zong, W.-h. et al. | 2001
- 580
-
Thermocapillary Convection in Low-Prandtl Fluid in an Open Rectangular Cavity Under Microgravity ConditionZhu, L.-h. / Liu, Q.-s. / Hu, W.-r. et al. | 2001
- 587
-
Plasma-Enhanced Vapor Deposition Amorphous SiO~x: H (0He, L.-n. et al. | 2001
- 594
-
Crystalline Quality of Cd/Zn Annealing High Resistivity CdZnTe WafersLi, D.-q. / Sang, W.-b. / Qian, Y.-b. / Shi, W.-m. / Li, D.-m. / Li, W.-w. / Min, J.-h. / Liu, D.-h. et al. | 2001
- 599
-
Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon ConcentrationsWang, Y. / Yue, R.-f. / Han, H.-x. / Liao, X.-b. / Wang, Y.-q. / Diao, H.-w. / Kong, G.-l. et al. | 2001
- 604
-
Rutherford Backscattering/Channeling and Photoluminescence of InGaN Films Grown by MOCVDLi, S.-t. / Jiang, F.-y. / Peng, X.-x. / Wang, L. / Xiong, C.-b. / Li, P. / Mo, C.-l. et al. | 2001
- 609
-
High Quality InGaAsP MQW by Selective Area GrowthLiu, G.-l. / Wang, W. / Zhang, B.-j. / Xu, G.-y. / Chen, W.-x. / Ye, X.-l. / Zhang, J.-y. / Wang, X.-j. / Zhu, H.-l. et al. | 2001
- 613
-
Growth of HgCdTe by Liquid Phase EpitaxyHuang, S.-h. / He, J.-f. / Chen, J.-c. / Lei, C.-h. et al. | 2001
- 618
-
Channel Hot-Carrier Effects in Fluorinated Short-Channel MOSFETHan, D.-d. / Zhang, G.-q. / Yu, X.-f. / Ren, D.-y. et al. | 2001
- 622
-
Influence of Variation of Negative Junction Depth on Characteristics of Deep-Sub-Micron PMOSFETRen, H.-x. / Hao, Y. et al. | 2001
- 629
-
Characteristic of Degradation Induced by Donor Interface State for Deep-Sub-Micron Grooved-Gate PMOSFETRen, H.-x. / Hao, Y. et al. | 2001
- 636
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Low Wavelength Shift Electroabsorption Modulated DFB LaserLiu, G.-l. / Wang, W. / Wang, X.-j. / Zhang, B.-j. / Chen, W.-x. / Zhang, J.-y. / Zhu, H.-l. et al. | 2001
- 641
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Fabrication and Characteristics of Au/PZT/p-Si Ferroelectric Memory DiodeWang, H. / Yu, J. / Dong, X.-m. / Zhou, W.-l. / Wang, Y.-b. / Xie, J.-f. et al. | 2001
- 646
-
Precise Prediction on the Operating Peak Junction Temperature for Power Microwave Si BJTZhang, H.-x. et al. | 2001
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-
In-Phase Wavelength Conversion in Semiconductor Optical Amplifier in Critical Lasing StateZhang, X.-l. / Sun, J.-q. / Liu, D.-m. / Yi, H.-q. / Huang, D.-x. et al. | 2001
- 656
-
Influence of Gate Oxide Growing Way on Radiation Effects of CMOS Op-AmplLu, W. / Guo, Q. / Ren, D.-y. / Yu, X.-f. / Zhang, G.-q. / Yan, R.-l. / Wang, M.-g. / Hu, Y.-h. / Zhao, W.-k. et al. | 2001
- 660
-
0.5mum Partially Depleted CMOS/SOI Device and CircuitLiu, X.-y. / Sun, H.-f. / Hai, C.-h. / Wu, D.-x. et al. | 2001
- 664
-
Circuit Design of a Reconfigurable ANN with GA TrainingLu, C. / Shi, B.-x. et al. | 2001
- 665
-
A Low-Power VLSI Architecture for Telescopic Search Block-Matching Motion EstimationZhang, W.-j. / Qiu, X.-h. / Zhou, R.-d. / Chen, H.-y. / Toshio, K. / Takayoshi, N. / Tsunehachi, I. et al. | 2001
- 677
-
Quasi-Thermodynamic Model of MOVPE Growth of Ga~xAl~yIn~1~-~x~-~yNLu, D.-c. / Duan, S.-k. et al. | 2001
- 684
-
Effects of Interdiffusion on Luminescence of InAs/GaAs Quantum Dots Covered by InGaAs Overgrowth LayerWei, Y.-q. / Liu, H.-y. / Xu, B. / Ding, D. / Liang, J.-b. / Wang, Z.-g. et al. | 2001
- 689
-
Schottky Barrier Characteristics of Polycrystalline and Epitaxial CoSi~2/n-Si (111) Contacts Formed by Solid State ReactionZhu, S.-y. / Ru, G.-p. / Qu, X.-p. / Li, B.-z. et al. | 2001
- 695
-
The Influence of Rapid Thermal Annealing on SiGe/Si Multiple-Quantum Wells p-i-n PhotodiodesLi, C. / Yang, Q.-q. / Wang, H.-j. / Wang, Y.-t. / Yu, J.-z. / Wang, Q.-m. et al. | 2001
- 700
-
A New Quasi 2-Dimensional Analytical Approach to Predicting Ring Junction Voltage, Edge Peak Fields and Optimal Spacing of Planar Junction with Single Floating Field Limiting Ring StructureHe, J. / Zhang, X. / Huang, R. / Wang, Y.-y. et al. | 2001
- 706
-
DC-20GHz RF MEMS SwitchZhu, J. / Lin, J.-t. / Lin, L.-q. et al. | 2001
- 710
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Proton Irradiation and Thermal Annealing of GaAs Solar CellsXiang, X.-b. / Du, W.-h. / Liao, X.-b. / Chang, X.-l. et al. | 2001
- 720
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Effects of Lattice Vibration on Self-Trapping Energy of Polaron of Electron-Surface Phonons Strong-Coupling in Polar Semiconductor SlabEerdunchaolu / Li, S.-s. / Xiao, J.-l. et al. | 2001
- 725
-
Intermixing of Asymmetrical Coupling Double Quantum Well via Combinatorial Ion Implantation with Photo-Modulated Reflectance SpectrumMiao, Z.-l. / Lu, W. / Chen, P.-p. / Li, Z.-f. / Liu, P. / Yuan, X.-z. / Cai, W.-y. / Xu, W.-l. / Shen, X.-c. / Chen, C.-m. et al. | 2001
- 728
-
Optical Phonon Raman Spectroscopy in SiC NanorodsYan, Y. / Huang, F.-m. / Zhang, S.-L. / Zhu, B.-f. / Shang, E.-y. / Fan, S.-s. et al. | 2001
- 732
-
Doping Characteristics of Mg in InGaAlP and GaPJi, G. / Li, Y.-s. / Cao, Y.-m. / Hua, M. et al. | 2001
- 736
-
POLY/SIS/Si Interface Evaluation by Differential Conductance (R~□)Zheng, Y.-j. / Jia, Y.-h. et al. | 2001
- 740
-
Ohmic Contact Performance Between Ti/Al/Ti/Au and AlGaNZhang, J.-w. / Zhang, T.-p. / Wang, W. / Ning, B.-j. / Wu, G.-y. et al. | 2001
- 745
-
Influence of Edge Damping on Quality Factor of Laterally-Driven MicrostructuresZhang, B. / Huang, Q.-a. et al. | 2001
- 750
-
Influence of Deviation from Stoichiometry on Crystallinic Qualities and Optoelectronic Properties of MOCVD GaNJiang, F.-y. / Yao, D.-m. / Mo, C.-l. / Wang, L. / Li, P. / Xiong, C.-b. / Peng, X.-x. et al. | 2001
- 754
-
Growth of 3C-SiC from Silicon Solvent and Restrain of 6H-SiCMa, J.-p. / Lu, G. / Lei, T.-m. / Chen, Z.-m. et al. | 2001
- 759
-
Electrical Characterization of n-Type 6H-SiC MOS CapacitorsWang, S.-r. / Liu, Z.-l. / Liang, G.-r. / Liang, X.-q. / Ma, H.-z. et al. | 2001
- 764
-
Simulation on Current Rating of GAT Type High-Speed High-Voltage Power TransistorsWang, Z. / Kang, B.-w. / Wu, Y. / Cheng, X. et al. | 2001
- 769
-
Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOS Structures Under Constant Pressure StressWei, J.-l. / Mao, L.-f. / Xu, M.-z. / Tan, C.-h. et al. | 2001
- 773
-
Hot-Carrier Effects in Deep Sub-Micron MOSFET'sLiu, H.-x. / Hao, Y. / Sun, Z. et al. | 2001
- 778
-
Influence of Backsurface Ar^+ Bombardment on the Characteristics of n-MOSFETHuang, M.-q. / Li, G.-q. / Zeng, S.-h. et al. | 2001
- 783
-
Influence of Temperatures and Radiation Dose Rate on CMOS Device Characteristic ParameterHe, B.-p. / Yao, Y.-j. / Peng, H.-l. / Zhang, Z.-x. et al. | 2001
- 787
-
Analysis of Diffraction Efficiency of the Holographic Optical Elements in VCD and DVDLiang, W.-g. / Zheng, W.-h. / Xie, J.-h. / Liang, E.-z. / Chen, L.-h. / Li, H. / Liu, H. et al. | 2001
- 791
-
A CMOS High-Speed Dual-Modulus Prescaler with New Filp-FlopZhang, C.-h. / Li, Y.-m. / Chen, H.-y. et al. | 2001
- 795
-
10GHz Gain-Switched DFB Laser with Low Timing JitterLi, Y.-h. / Lou, C.-y. / Han, M. / Wang, Z.-x. / Gao, Y.-z. et al. | 2001
- 799
-
A High Performance DDFS Suitable for Digital Vedio EncoderShen, B. / Zhang, Q.-l. et al. | 2001
- 805
-
Device Model Parameters for 2.5-10Gb/s HEMT Modulator Driver ICGao, J.-j. / Gao, B.-x. / Wu, D.-x. et al. | 2001
- 810
-
Technology of Partially Depleted CMOS/SOILiu, X.-y. / Sun, H.-f. / Chen, H.-z. / Hu, H.-z. / Hai, C.-h. / Liu, Z.-l. / He, Z.-j. / Wu, D.-x. et al. | 2001
- 816
-
Super High Speed Polysilicon Emitter Integrated Circuit TechnologyZhang, L.-c. / Ni, X.-w. / Wang, Y.-y. et al. | 2001
- 817
-
Porosity Determination Equation for Porous SiliconLian, D.-l. / Cheah, K. W. et al. | 2001
- 821
-
Modeling Thermodynamics of Smart-Cut ProcessHan, W.-h. / Yu, J.-z. et al. | 2001
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Channel Lateral Pocket or Halo Region of NMOSFET Characterized by Interface State R-G Current of the Forward Gated-DiodeHe, J. / Huang, A.-h. / Zhang, X. / Huang, R. et al. | 2001
- 832
-
Strongly Gain-Coupled DFB Laser Monolithically Integrated with a Self-Alignment Spot-Size ConverterLiu, G.-l. / Wang, W. / Zhu, H.-l. / Zhang, J.-y. / Zhou, F. / Wang, X.-j. / Hu, X.-h. et al. | 2001
- 837
-
Analysis and Design for a Micro-Mechanical Optical SwitchJia, Y.-b. / Chen, L.-h. / Li, Y.-z. et al. | 2001
- 841
-
A Radiation Hardened Power Device-VDMNOSFETLiu, Y.-k. / Liang, C.-g. / Wang, C.-h. / Li, S.-y. et al. | 2001
- 846
-
Photoelastic Effect and Lateral Optical Confinement in InGaAsP/InP Double HeterostructuresXing, Q.-j. / Xu, W.-j. / Wu, Z.-b. et al. | 2001
- 853
-
Numerical Simulation of CdTe Growth with Vertical Bridgman MethodWei, Y.-f. / Fang, W.-z. / Zhang, X.-p. / Yang, J.-r. / He, L. et al. | 2001
- 860
-
Electrical Characteristics of 3-6nm Ultra-Thin Gate OxideGao, W.-y. / Zhang, X. / Tian, D.-y. / Zhang, D.-c. / Wang, Y.-y. et al. | 2001
- 865
-
Epitaxial Growth of CeO~2 films on Si (100) Substrate and Its Electrical PropertiesKang, J.-f. / Liu, X.-y. / Wang, W. / Yu, T. / Han, R.-q. / Lian, G.-j. / Zhang, Z.-h. / Xiong, G.-c. et al. | 2001
- 871
-
Dislocation Density in Top Silicon Layer of Low Dose SIMOX WaferZheng, W. / Chen, M. / Chen, J. / Lin, Z.-x. / Wang, X. et al. | 2001
- 875
-
Type- II SiGe/Si Multiple Quntum Wells Grown on Relaxed SiGe Virtual SubstrateLi, D.-z. / Huang, C.-j. / Yu, Z. / Cheng, B.-w. / Yu, J.-z. / Wang, Q.-m. et al. | 2001
- 881
-
Study on Nitridation of Thin-Gate SiO~2 Using Nitrogen Ion ImplantationWang, Y.-f. / Liu, Z.-l. et al. | 2001
- 885
-
Relations Between Side-Gating Hysteresis and Data-Collection-Time of Channel Current in GaAs MESFETYi, M.-x. / Ding, Y. / Zhao, F.-c. / Mao, Y.-d. / Xia, G.-q. / Zhao, J.-l. et al. | 2001
- 888
-
Effects of Incomplete Ionization of Acceptors on 6H-SiC MOSFETShang, Y.-c. / Zhang, Y.-m. et al. | 2001
- 892
-
Effective Electron-Mass Measurements for Thin Film Insulator MOS Structure Using Fowler-Nordheim Tunneling Current OscillationsMao, L.-f. / Tan, C.-h. / Xu, M.-z. et al. | 2001
- 897
-
An Optimization Technique for Planar Spiral Inductor Based on the Inductor's Physical Model and Genetic AlgorithmLin, M. / Li, Y.-m. / Chen, H.-y. et al. | 2001
- 904
-
Study on Ionizing Radiation Trapped Charge in Thin SiO~2 MOS CapacitorsLiu, Z.-l. et al. | 2001
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-
Modeling of Subthreshold Characteristics of Deep-Submicrometer FD DevicesCheng, B.-j. / Shao, Z.-b. / Tang, T.-t. / Shen, W.-z. / Zhao, W.-k. et al. | 2001
- 915
-
2-Dimensional Analysis of Surface Electric Field Profile of Planar Junction with Single-Step Field-Plate Termination StructureHe, J. / Zhang, X. / Huang, R. / Wang, Y.-y. et al. | 2001
- 919
-
Study on MMI Arrayed-Waveguide Grating MUX/DMUXMa, H.-l. / Jiang, X.-q. / Yang, J.-y. / Wang, M.-h. / Yu, J.-z. et al. | 2001
- 924
-
High Temperature Pressure Sensor Fabricated with Smart-Cut SOI MaterialsHuang, Y.-p. / Zhu, S.-y. / Li, A.-z. / Bao, M.-h. / Shen, S.-q. / Wang, J. / Wu, D.-p. et al. | 2001
- 933
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A Novel Gas Sensor Based on Charge-Flow TransistorXie, D. / Jiang, Y.-d. / Jiang, J.-z. / Wu, Z.-m. / Li, Y.-r. et al. | 2001
- 937
-
SiGe PMOSFET's Favorable for Fabricating CMOSLi, C. / Zhu, P.-Y. / Luo, G.-L. / Chen, P.-y. / Qian, P.-x. et al. | 2001
- 938
-
Optimal Analysis of Performance Characteristics of Combined Semiconductor Refrigeration SystemWang, H.-j. / Chen, J.-c. et al. | 2001
- 944
-
A 2.5Gb/s GaAs MESFET Clock Recovery and Decision CircuitZhan, Y. / Xia, G.-q. / Wang, Y.-s. / Zhao, J.-l. / Zhu, C.-s. et al. | 2001
- 947
-
Fully-Depleted SOI CMOS Devices and CircuitsSun, H.-f. / Liu, X.-y. / Hai, C.-h. et al. | 2001
- 951
-
Dynamic Behaviour of Miniature Microphone with Corrugated Membrane: Top-down Design with EDA/CADChen, J. / Liu, L.-t. / Li, Z.-j. et al. | 2001
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Forward Gated-Diode Monitoring of F-N Stressing-Induced Interface Traps of NMOSFET/SOIHe, J. / Huang, A.-h. / Zhang, X. / Huang, R. et al. | 2001
- 962
-
High-Voltage Ti/6H-SiC Schottky Barrier DiodesWang, S.-r. / Liu, Z.-l. / Li, G.-h. / Yu, F. / Liu, H.-z. et al. | 2001
- 967
-
Design of 1GHz Local Oscillator with DLL-Based Frequency Multiplier TechniqueLi, J.-c. / Qiu, Y.-l. et al. | 2001
- 971
-
Mach-Zehnder Electro-Optic Polymer Modulator with Corona Poled Core LayerYang, X.-h. / Du, Y. / Shi, Z.-w. / Wu, R.-h. et al. | 2001
- 975
-
High Performance VHF Power VDMOSFETs for Low Voltage ApplicationsLiu, Y.-k. / Liang, C.-g. / Deng, J.-g. / Zhang, Y.-q. / Lang, X.-l. / Li, S.-y. et al. | 2001
- 984
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Si~1~-~xC~x Alloy Formation and Its Characteristics After Carbon Ion Implantation in SiliconWang, Y.-s. / Li, J.-m. / Wang, Y.-t. / Wang, Y.-b. / Lin, L.-y. et al. | 2001
- 991
-
Electrical Properties of Solid C~7~0/GaAs HeterojunctionsChen, K.-m. / Sun, W.-h. / Wu, K. / Wu, L.-q. / Zhou, X.-h. / Gu, Z.-n. / Liu, H.-f. et al. | 2001
- 995
-
Study on the Annealing of Cd~1~-~xZn~xTe AlloysWei, Y.-f. / Wei-zheng, F. / Liu, C.-f. / Yang, J.-r. / He, L. / Wang, F.-j. / Wang, X.-j. / Huang, D.-m. et al. | 2001
- 1001
-
Structural and Optical Properties of CdSeS Quantum Dots in GlassJiang, D.-s. / Li, G.-h. / Han, H.-x. / Jia, R. / Sun, B.-q. / Wang, R.-z. / Sun, P. et al. | 2001
- 1006
-
Gate Oxide Reliability Degradation by Post Poly-Silicon Annealing and Suppression MethodGao, W.-y. / Liu, Z.-l. / Yu, F. / Zhang, X. et al. | 2001
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Behavior of Residual Oxygen in Top Si Layer of SIMOX Studied by PL and SIMSLi, Y.-x. / Zhang, X. / Huang, R. / Wang, Y.-y. / Luo, Y. et al. | 2001
- 1014
-
Structural and Electrical Properties of Ultra-Thin SiO~2 Films Fabricated with Plasma Oxidation TechniqueBao, Y. / Jiang, M. / Li, W. / Ma, Z.-y. / Huang, S.-y. / Wang, L. / Huang, X.-f. / Chen, K.-j. et al. | 2001
- 1018
-
Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron SputteringYe, Z.-z. / Chen, H.-h. / Liu, R. / Zhang, H.-x. / Zhao, B.-h. et al. | 2001
- 1024
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Study of Low Dose SIMOX WaferChen, M. / Chen, J. / Zheng, W. / Li, L. / Mou, H.-c. / Lin, Z.-x. / Yu, Y.-h. / Wang, X. et al. | 2001
- 1029
-
GaN MOCVD Growth on ZnAl~2O~4/alpha-Al~2O~3 SubstratesBi, Z.-x. / Zhang, R. / Li, W.-p. / Yin, J. / Shen, B. / Zhou, Y.-g. / Chen, P. / Chen, Z.-z. / Gu, S.-l. / Shi, Y. et al. | 2001
- 1034
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Difference Between GaN Films Grown on Two Opposite Oriented c-Al~2O~3 SubstratesHan, P.-d. / Duan, X.-f. / Sun, J.-l. / Zhang, Z. / Wang, Z.-g. et al. | 2001
- 1037
-
SiGe/Si HBT Material Grown by GSMBEZou, D.-s. / Xu, C. / Chen, J.-x. / Shi, C. / Du, J.-y. / Gao, G. / Shen, G.-d. / Huang, D.-d. / Li, J.-p. / Lin, L.-y. et al. | 2001
- 1038
-
Channel Hot-Carrier-Induced Breakdown of PDSOI NMOSFET'sLiu, H.-x. / Hao, Y. / Zhu, J.-g. et al. | 2001
- 1047
-
The Effects of Barrier Lowering Induced by Image Potential on the Direct Tunneling Current in Ultrathin MOS StructuresMao, L.-f. / Wei, J.-l. / Mu, F.-c. / Tan, C.-h. / Xu, M.-z. et al. | 2001
- 1051
-
Joule Heating Effect and Organic Decomposition in Organic Light-Emitting DiodesZhou, M.-j. / Zhong, G.-y. / He, J. / Liao, L.-s. / Hou, X.-y. et al. | 2001
- 1056
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6H-SiC High-Voltage Schottky Barrier DiodesWang, S.-r. / Liu, Z.-l. / Xu, P. / Ge, Y.-c. / Yao, W.-q. / Gao, C.-h. et al. | 2001
- 1062
-
Optically Pumped InGaAs/InGaAsP MQW Microdisk Lasers Grown by MOCVDWu, G.-z. / Zhang, Z.-y. / Ren, D.-c. / Zhang, X.-d. et al. | 2001
- 1068
-
An Efficient Multiplier for GF(2^k) and the VLSI ImplementationZhou, H.-h. / Shen, B. / Zhang, Q.-l. et al. | 2001
- 1074
-
Design of High-Performance Multiphase Clock Generator Used in LVDS Driver with 0.25mum CMOS TechnologyChen, Y. / Hong, Z.-l. / Zhu, J. et al. | 2001
- 1080
-
A Novel Circuit for Testing Output Driver Current Slew RateXu, D.-l. / Guo, X.-w. / Xu, Z.-w. / Ren, J.-y. et al. | 2001
- 1086
-
Simulation of Thermal Performance of ULSI Interconnect SystemRuan, G. / Xiao, X. et al. | 2001
- 1092
-
VLSI Implementation of TEAWu, X.-j. / Ge, Y.-q. / Chen, H.-y. / Sun, Y.-h. et al. | 2001
- 1096
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Electroplating Technology for Copper Interconnection in ULSIZhang, G.-h. / Qian, H. / Xia, Y. / Wang, W.-q. / Long, S.-b. et al. | 2001
- 1097
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Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam EpitaxyPan, Z. / Li, L.-h. / Xu, Y.-q. / Du, Y. / Lin, Y.-w. et al. | 2001
- 1102
-
Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS TransistorHe, J. / Zhang, X. et al. | 2001
- 1107
-
Characterization of Sub-100nm MOSFETs with High K Gate DielectricZhu, H.-w. / Liu, X.-y. / Shen, C. / Kang, J.-f. / Han, R.-q. et al. | 2001
- 1112
-
High Brightness, High Power Density Fiber Coupling of High Power Laser DiodeWang, X.-w. / Xiao, J.-w. / Wang, Z.-m. / Ma, X.-y. / Liu, Z.-s. / Fang, G.-z. / Zhang, J.-m. / Feng, X.-m. et al. | 2001
- 1116
-
Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVDWang, Y.-d. / Huang, J.-y. / Ye, Z.-z. / Zhao, B.-h. et al. | 2001
- 1119
-
Effect of Carbon on Oxidized Si~1~-~x~-~yGe~xC~y Thin FilmsWang, Y.-d. / Ye, Z.-z. / Huang, J.-y. / Zhao, B.-h. et al. | 2001
- 1122
-
Bandgap Narrowing of Strained Si~1~-~xGe~x as a Function of Ge Fraction, Temperature and Impurity ConcentrationJin, H.-y. / Zhang, L.-C. et al. | 2001
- 1127
-
Absorption of Porous Silicon Microcavities via Photocurrent MeasurementXiong, W.-h. / Xiong, Z.-h. / Lu, F. et al. | 2001
- 1131
-
Strong Violet Emission from Ge-SiO~2 Co-Sputtered Films Annealed in O~2Shen, J.-k. / Wu, X.-l. / Yuan, R.-k. / Tan, C. / Bao, X.-m. et al. | 2001
- 1135
-
Recombination Along the Track of Proton in SiO~2 FilmsWang, G.-z. / Zhang, Z.-x. / Jiang, J.-h. / Luo, Y.-h. et al. | 2001
- 1139
-
Vapor Growth and Electrical Properties of CdSe Crystals with Excess CdJin, Y.-r. / Zhu, S.-f. / Zhao, B.-j. / Shao, S.-y. / Li, Q.-f. / Wang, X.-m. / Yu, F.-l. / Song, F. et al. | 2001
- 1143
-
Effect of Interface Roughness on the Direct Tunneling Current in Ultrathin MOS StructuresMao, L.-f. / Tan, C.-h. / Xu, M.-z. / Wei, J.-l. / Mu, F.-c. / Zhang, H.-q. et al. | 2001
- 1147
-
Model and Analyses of Transient Floating-Body Effect of SOI DevicesBu, W.-h. / Huang, R. / Xu, W.-h. / Zhang, X. et al. | 2001
- 1154
-
A Short-Channel SOI MOSFET Model Considering Total Dose EffectsWan, X.-h. / Gan, X.-w. / Zhang, X. / Huang, R. / Wang, Y.-y. et al. | 2001
- 1160
-
Analytical Model of Large-Signal DC I-V Characteristics for 4H-SiC RF Power MESFET'sYang, L.-a. / Zhang, Y.-m. / Lu, H.-l. / Yu, C.-l. et al. | 2001
- 1165
-
Dependence of Operational Modes of PCSSs on Bias VoltageGong, R.-x. / Zhang, Y.-m. / Shi, S.-x. / Zhang, T.-y. et al. | 2001
- 1171
-
DC Model and Bistable Characteristics of Resonant Tunneling DiodeNiu, P.-j. / Guo, W.-l. / Liang, H.-l. / Zhang, S.-l. / Mao, L.-h. / Wu, X.-w. et al. | 2001
- 1176
-
Simulation Analysis of the Transport Performance of PLEDXiong, S.-z. / Zhao, Y. / Wu, C.-y. / Hao, Y. / Wang, Y. / Chen, Y.-s. / Yang, H.-d. / Zhou, Z.-h. / Yu, G. et al. | 2001
- 1182
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1/f Noise in Silicon-Based Piezoresistive MicrosensorYu, X.-m. / Jiang, X.-l. / Thaysen, J. / Hansen, O. / Boisen, A. et al. | 2001
- 1188
-
Low Voltage Class C SiGe Microwave Power HBTsJia, H.-y. / Chen, P.-y. / Tsien, P.-H. / Pan, H.-s. / Huang, J. / Yang, Z.-m. / Li, M.-y. et al. | 2001
- 1189
-
An Improved High Resolution Current-Mode SorterChi, B.-y. / Shi, B.-x. et al. | 2001
- 1192
-
Novel Type of Base-Combed RF Power TransistorsZhou, R. / Zhang, Q.-z. / Hu, S.-f. et al. | 2001
- 1202
-
Pt-LaF~3 Mixture Film Dissolved Oxygen Sensor Based on FET StructureNa, X.-b. / Niu, W.-c. / Li, H.-w. / Xie, J.-x. et al. | 2001
- 1207
-
Double-Polysilicon Emitter RCA Devices and ICs at 77KYe, H.-f. / Gao, Y.-z. / Jin, H.-y. / Luo, K. / Ning, B.-j. / Mo, B.-x. / Zhang, G.-q. / Zhang, L.-c. et al. | 2001
- 1212
-
An Improved Model and Method of Calculating the VLSI Critical AreaMa, P.-j. / Hao, Y. / Kou, Y. et al. | 2001
- 1217
-
Characteristics of Direct Wafer Bonded InP MaterialsLi, N. / Han, Y.-j. / Hao, Z.-b. / Sun, C.-z. / Luo, Y. et al. | 2001
- 1222
-
Research on Etch Rate of Reactive Ion Etching of GaAs, AlAs and DBRLiu, W.-k. / Lin, S.-m. / Wu, S. / Qu, B. / Zhu, J.-l. / Gao, J.-h. / Lu, J.-z. / Liao, Q.-w. / Deng, H. / Chen, H.-d. et al. | 2001
- 1226
-
Study of Silicon Wafer Cleaning Effects Using Clean Solutions Containing Surfactants and ChelatesCao, B.-c. / Yu, X.-h. / Ma, J. / Ma, H.-l. / Liu, Z.-l. et al. | 2001
- 1231
-
Characteristics of Refractory Metal Gate MOS Capacitor with Improved Sputtering Process for Gate ElectrodeLi, R.-z. / Xu, Q.-x. et al. | 2001
- 1235
-
Temperature Dependence of Performance of 6H-SiC Unipolar Power DevicesHe, J. / Zhang, X. et al. | 2001
- 1240
-
Substrate Hot Holes Injection Induced Breakdown Characteristics of Thin Gate OxidesLiu, H.-x. / Hao, Y. et al. | 2001
- 1246
-
The Jitter Performance Comparison Between DLL and PLL-Based RF CMOS OscillatorsLi, J.-c. / Qiu, Y.-l. et al. | 2001
- 1250
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A Novel High-Voltage Detector Integrated into SPIC by Using FFLRHan, L. / Ye, X.-n. / Chen, X.-b. et al. | 2001
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Luminescence of Si-Based C~5~0 Mesoporous Compound MaterialYang, Y. / Zou, J.-p. / Chen, H.-l. / Bao, X.-m. et al. | 2001
- 1263
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Surface Structure and 1.54 mum Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO~2/Si Thin FilmXu, F. / Xiao, Z.-s. / Cheng, G.-a. / Yi, Z.-z. / Zeng, Y.-x. / Zhang, T.-h. / Gu, L.-l. et al. | 2001
- 1268
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Structure and Characteristics of C~6~0 Thin Films Grown in Argon AtmosphereZhang, H.-y. / Chen, Y.-m. / Wu, C.-y. / He, Y.-y. / Wang, J.-h. / Zhu, Y.-j. et al. | 2001
- 1273
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SiO~J Mediated Epitaxial Ternary Silicide (Co~1~-~xNi~x) Si~2Han, Y.-z. / Li, B.-z. / Ru, G.-p. / Qu, X.-p. / Cao, Y.-f. / Xu, B.-l. / Jiang, Y.-l. / Wang, L.-w. / Zhang, R.-y. / Chu, P. K. et al. | 2001
- 1276
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Breakdown Characteristics of Nitride Ultra-Thin Gate OxideHan, D.-d. / Zhang, G.-q. / Ren, D.-y. et al. | 2001
- 1283
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Optimal Temperature of Crystallization and Photoluminescence of SiC/Si (100) Film Prepared by Pulsed ArF Excimer Laser DepositionWang, Y.-x. / Cao, Y. / He, H.-p. / Tang, H.-g. / Wang, L.-w. / Huang, J.-p. / Lin, C.-l. et al. | 2001
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Determination of Oxygen in Heavily Doped CZ-SiliconLiu, P.-d. / Huang, X.-r. / Shen, Y.-j. / Li, L.-b. / Que, D.-l. et al. | 2001
- 1291
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Effects of Size and Number of Thermocouples on Device Performance in a Infrared Silicon Based ThermopileLi, Z.-h. / Feng, M. / Liu, Y.-y. / Shen, D.-x. / Lu, J.-g. / Zhu, Z.-q. et al. | 2001
- 1292
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Sensitivity Analysis of the Back Interface Trap-Induced R-G Current Obtained by a Lateral SOI Forward Gated-DiodeHe, J. / Zhang, X. / Huang, R. / Huang, A.-h. / Lu, Z.-t. / Wang, Y.-y. / Nguyen, B.-Y. / Foisy, M. / Zhang, Y.-h. / Yu, S. et al. | 2001
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Influence of Structure Parameters on the Hot-Carrier-Effect Immunity and Short-Channel-Effect Suppression in Deep-Sub-Micron Grooved Gate PMOSFETRen, H.-x. / Hao, Y. et al. | 2001
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A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier StressMu, F.-c. / Xu, M.-z. / Tan, C.-h. / Duan, X.-r. et al. | 2001
- 1314
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Substrate Hot Hole Coupled TDDB Effects of Thin GateLiu, H.-x. / Hao, Y. / Zhang, J.-c. et al. | 2001
- 1319
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A New Degradation Model of Gate Current of pMOSFETZhang, J.-c. / Hao, Y. / Zhu, Z.-w. / Liu, H.-b. et al. | 2001
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An Analytical Temperature-Dependent Kink Effect Model of PD SOI NMOSFETZhang, H.-p. / Wei, T.-l. / Feng, Y.-l. / Yao, W. / Song, A.-f. et al. | 2001
- 1328
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A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total DoseWan, X.-h. / Zhang, X. / Gao, W.-y. / Huang, R. / Wang, Y.-y. et al. | 2001
- 1334
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Plasma Oscillation in Purity GaAsZheng, Y.-y. et al. | 2001
- 1342
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Underfill Delamination and Solder Joint Failure of Flip Chip on BoardXu, B.-l. / Zhang, Q. / Cai, X. / Huang, W.-d. / Xie, X.-m. / Cheng, Z.-n. et al. | 2001
- 1345
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Reliability Model of IC Interconnect Based on Defect Distribution StatisticsChen, T.-f. / Hao, Y. / Zhao, T.-x. / Zhang, J.-c. et al. | 2001
- 1351
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VLSI Design and Implementation of A Low Power Microcontroller Using Asynchronous LogicYu, Y. / Zhou, L. / Min, H. et al. | 2001
- 1356
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Design of Low Voltage Charge-Recovery Logic CircuitLi, X.-m. / Qiu, Y.-l. / Chen, C.-s. et al. | 2001
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A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED TechnologyZheng, G.-f. / Yang, H.-x. / Man, C.-h. / Wong, W.-l. / An, D.-w. / Burnett, J. et al. | 2001
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Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo MethodSun, L. / Du, G. / Liu, X.-y. / Han, R.-q. / Houlet, P. / Fujitani, H. et al. | 2001
- 1369
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Current Mismatches in Charge Pumps of DLL-Based RF CMOS OscillatorsLi, J.-c. / Qiu, Y.-l. et al. | 2001
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High Extinction Ration Polarization Independent EA ModulatorSun, Y. / Wang, W. / Chen, W.-x. / Liu, G.-l. / Zhou, F. / Zhu, H.-l. et al. | 2001
- 1377
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Origin of Photoluminescence of Neodymium-Implanted SiliconXiao, Z.-s. / Xu, F. / Zhang, T.-h. / Yi, Z.-z. / Cheng, G.-a. et al. | 2001
- 1386
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Theoretical Calculation of Optimum Doping Content in Oxide Semiconductor Transparent Conductive FilmsFan, Z.-x. / Sun, Y.-c. / Chen, J.-l. et al. | 2001
- 1391
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Broad Spectral Response Characteristics of Semiconducting YBCO Thin FilmWan, C.-m. / Liu, X.-d. / Sun, Q. / Li, Y.-h. / Liu, J.-h. / Li, J.-l. / Li, G.-d. / Huang, Z.-t. / Huang, C.-c. / Li, D. et al. | 2001
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Electrical Properties and Photoluminescence of P-CdZnTe Irradiated by High-Energy Ar^+Pei, H.-y. / Li, X.-y. / Fang, J.-x. / Hou, M.-d. et al. | 2001
- 1400
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Electronic Structures of Zinc-Blende GaN (001) SurfaceCai, D.-j. / Feng, X. / Zhu, Z.-z. / Kang, J.-y. et al. | 2001
- 1405
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Effects of Nitrogen on Dislocations in CZ-SiliconLi, D.-s. / Yang, D.-r. / Zhu, A.-p. / Huang, X.-r. / Wang, G. / Zhang, J.-x. / Li, L.-b. / Que, D.-l. et al. | 2001
- 1410
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Photoluminescence Spectra of Organic Dyes Embedded in Porous AluminaYuan, S.-j. / Li, Q.-s. / Pan, Z.-f. / Dong, Y.-f. / Wang, Q.-t. / Ji, H.-h. et al. | 2001
- 1415
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The Current Enhancement of the Tunneling Rapid Thermal Nitrided SiO~2 Films from Different Oriented Si and the Model ExplainationFeng, W.-x. / Chen, P.-s. / Tian, P.-y. / Liu, J. et al. | 2001
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Effects of Argon Gas Flow Rate on Oxygen and Carbon Concentration in CZSi CrystalsRen, B.-y. / Zhang, Z.-c. / Liu, C.-c. / Hao, Q.-y. / Wang, M. et al. | 2001
- 1424
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Investigation on Two-Dimensional Electron Gas in Al~xGa~1~-~xN/GaN Heterostructures by Using Schottky C-V MeasurementZhou, Y.-g. / Shen, B. / Liu, J. / Yu, H.-q. / Zhou, H.-m. / Qian, Y. / Zhang, R. / Shi, Y. / Zheng, Y.-d. et al. | 2001
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AlGaN/GaN Polarization-Induced Two-Dimensional Electron Gas Materials Grown by Radio-Frequency Plasma Assisted Molecular Beam EpitaxySun, D.-z. / Hu, G.-x. / Wang, X.-l. / Liu, H.-x. / Liu, C.-h. / Zeng, Y.-p. / Li, J.-m. / Lin, L.-y. et al. | 2001
- 1433
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The Growth of Semiconductive Manganese Silicide by Ion Beam EpitaxyYang, J.-l. / Chen, N.-f. / Liu, Z.-k. / Yang, S.-y. / Chai, C.-l. / Liao, M.-y. / He, H.-j. et al. | 2001
- 1434
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Optimization Design and Fabrication of Si/SiGe PMOSFETsYang, P.-f. / Li, J.-c. / Yu, Q. / Chen, Y. / Xie, M.-x. / Yang, M.-h. / He, L. / Li, K.-c. / Tan, K.-z. / Liu, D.-g. et al. | 2001
- 1443
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MS Interface Parameters Extracted from Current-Voltage Characteristic of PV DeviceHu, X.-n. / Li, Y.-j. / Fang, J.-x. et al. | 2001
- 1449
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Structure Design Optimization of GAT Type Power Switching TransistorsWang, Z. / Wu, Y. / Kang, B.-w. / Cheng, X. et al. | 2001
- 1457
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A Novel Low Power 64 x 64 CMOS Snapshot Readout Structure for Focal Plane ArrayChen, Z.-j. / Li, X.-y. / Ji, L.-j. / Han, J.-z. / Yu, S.-l. et al. | 2001
- 1461
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Highly Effective Half-Wave Rectifying Circuits Based on MOS TechnologyLu, C. / Li, Y.-m. et al. | 2001
- 1467
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DC Characteristics of Metal-Semiconductor-Metal PhotodetectorWu, S. / Lin, S.-m. / Liu, W.-k. et al. | 2001
- 1473
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Total Dose Effects of Protons on MOS DevicesWang, G.-z. / Zhang, Z.-x. / Jiang, J.-h. / Luo, Y.-h. / Peng, H.-l. / He, B.-p. et al. | 2001
- 1480
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A New Method of Measuring Plasma Edge DamageZhu, Z.-w. / Hao, Y. / Zhang, J.-c. et al. | 2001
- 1481
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Optically Activated Charge Domain Model for High-Gain GaAs Photoconductive SwitchesShi, W. et al. | 2001
- 1486
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Novel Substrate pn Junction Isolation for RF Integrated Inductors on SiliconLiu, C. / Chen, X.-l. / Yan, J.-l. et al. | 2001
- 1490
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A Rapid RTL Power Estimator for Combinational CircuitZhao, W.-q. / Cui, M.-d. / Tang, P.-s. et al. | 2001
- 1497
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A Practical Backside Technology for Indium Phosphide MMICsLi, F.-x. / Yang, N.-b. / Post, G. / Nissim, Y. / Falcou, A. / Courbet, C. / Sanchez, S. / Scavennec, A. et al. | 2001
- 1501
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Transfer of Thin Epitaxial Silicon Films by Wafer Bonding and Splitting of Double Layered Porous Silicon for SOI FabricationZhu, S.-y. / Li, A.-z. / Huang, Y.-p. et al. | 2001
- 1507
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Influences of Carbon Doping on beta-FeSi~2 Film Synthesized by Ion ImplantationLi, X.-n. / Nie, D. / Dong, C. / Xu, L. / Zhang, Z. et al. | 2001
- 1516
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Criterion of Gap Closing for Silicon Wafer BondabilityHan, W.-h. / Yu, J.-z. et al. | 2001
- 1519
-
Monte. Carlo Simulation of Electron Scattering Trajectories in Low-Energy Electron Beam LithographyRen, L.-m. / Chen, B.-q. et al. | 2001
- 1525
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Orange-Green Emission from Porous Si Coated with Ge FilmsTang, N. / Wu, X.-l. / Gu, Y. / Bao, X.-m. et al. | 2001
- 1529
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Stress in SiN~x Film Embedded with Silicon Nanocrystals Preparing by LPCVDChen, D.-p. / Ye, T.-c. / Xie, C.-q. / Li, B. / Zhao, L.-l. / Han, J.-d. / Xu, X.-c. et al. | 2001
- 1534
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Radiation Damage and Annealing Behavior of 2.0MeV Er^+ Implanted SiliconLi, Y.-g. / Xue, C.-s. et al. | 2001
- 1538
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Phi150-200mm Epitaxial Silicon Materials Applied to CMOS Integrated CircuitsWang, Q.-y. / Lin, L.-y. / He, Z.-q. / Gong, Y.-y. / Cai, T.-h. / Yu, Y.-h. / He, L.-z. / Gao, X.-f. / Wang, J.-h. / Deng, H.-f. et al. | 2001
- 1543
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Simulation and Design Optimization of Novel Microelec tromechanical Digital-to-Analog ConverterLiu, Q.-q. / Huang, Q.-a. et al. | 2001
- 1546
-
Silica-on-Silicon Optical WaveguidesXu, Y.-q. / Liang, C.-g. / Yang, Y.-j. / Zhao, T. et al. | 2001
- 1551
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Fabrication of MEMS Optical SwitchesLiang, C.-g. / Xu, Y.-q. / Yang, Y.-j. et al. | 2001
- 1557
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LP-MOVPE Grown Broad-Waveguide Al-Free Active-Region SQW LasersLi, Z.-h. / Wang, X.-w. / Yang, J.-h. / Zhang, X.-d. et al. | 2001
- 1561
-
A New Program Controlled Analog GeneratorWang, D.-h. / Li, G. / Lin, Y. et al. | 2001
- 1565
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A Novel Low Power Loss IGBT (LPL-IGBT) and Its SimulationWu, Y. / Lu, X.-h. / Kang, B.-w. / Wang, Z. / Cheng, X. / Gao, Y. et al. | 2001
- 1572
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Two Practical Fiber Coupling Optical Systems for High Power Fiber-Coupled Laser Diodes ModuleChen, S.-w. / Han, Q. / Hu, C.-x. / Jin, C.-z. et al. | 2001
- 1576
-
Statistical Failure Characteristics of N-MOSFET's with Ultrathin Gate Oxides Under FN Stress and Lifetime PredictionMu, F.-c. / Xu, M.-z. / Tan, C.-h. / Duan, X.-r. et al. | 2001
- 1581
-
Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET'sGan, X.-w. / Wang, X.-s. / Zhang, X. et al. | 2001
- 1586
-
A Unified Model for Hot-Carrier-Induced Degradation Simulation and Lifetime Prediction of PMOSFET'sZhang, J.-c. / Hao, Y. / Zhu, Z.-w. et al. | 2001
- 1592
-
TDDB Effect for Thin Gate DielectricLiu, H.-x. / Hao, Y. et al. | 2001
- 1596
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Radiation Characteristics of N~2O-Annealed H~2-O~2 Grown OxideLiu, X.-y. / Liu, Y.-l. / Sun, H.-f. / Hai, C.-h. / Wu, D.-x. / He, Z.-j. / Liu, Z.-l. et al. | 2001