Yb-Doped Ni FUSI for the n-MOSFETs Gate Electrode Application (English)
- New search for: Chen, J. D.
- New search for: Yu, H. Y.
- New search for: Li, M. F.
- New search for: Kwong, D.-L.
- New search for: van Dal, M. J. H.
- New search for: Kittl, J. A.
- New search for: Lauwers, A.
- New search for: Absil, P.
- New search for: Jurczak, M.
- New search for: Biesemans, S.
- New search for: Chen, J. D.
- New search for: Yu, H. Y.
- New search for: Li, M. F.
- New search for: Kwong, D.-L.
- New search for: van Dal, M. J. H.
- New search for: Kittl, J. A.
- New search for: Lauwers, A.
- New search for: Absil, P.
- New search for: Jurczak, M.
- New search for: Biesemans, S.
In:
IEEE ELECTRON DEVICE LETTERS
;
27
, 3
;
160-162
;
2006
-
ISSN:
- Article (Journal) / Print
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Title:Yb-Doped Ni FUSI for the n-MOSFETs Gate Electrode Application
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Contributors:Chen, J. D. ( author ) / Yu, H. Y. ( author ) / Li, M. F. ( author ) / Kwong, D.-L. ( author ) / van Dal, M. J. H. ( author ) / Kittl, J. A. ( author ) / Lauwers, A. ( author ) / Absil, P. ( author ) / Jurczak, M. ( author ) / Biesemans, S. ( author )
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Published in:IEEE ELECTRON DEVICE LETTERS ; 27, 3 ; 160-162
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2006-01-01
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Size:3 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 27, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 141
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Changes to the Editorial BoardTaur, Y. et al. | 2006
- 142
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Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltageLueck, M.R. / Andre, C.L. / Pitera, A.J. / Lee, M.L. / Fitzgerald, E.A. / Ringel, S.A. et al. | 2006
- 145
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Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayerOk, I. / Hyoung-sub Kim, / Manhong Zhang, / Chang-Yong Kang, / Se Jong Rhee, / Changhwan Choi, / Krishnan, S.A. / Tackhwi Lee, / Feng Zhu, / Thareja, G. et al. | 2006
- 145
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Metal Gate-HfO~2 MOS Structures on GaAs Substrate With and Without Si InterlayerOk, I. / Kim, H.-S. / Zhang, M. / Kang, C.-Y. / Rhee, S. J. / Choi, C. / Krishnan, S. A. / Lee, T. / Zhu, F. / Thareja, G. et al. | 2006
- 148
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Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devicesChin-Lung Cheng, / Kuei-Shu Chang-Liao, / Tzu-Chen Wang, / Tien-Ko Wang, / Howard Chih-Hao Wang, et al. | 2006
- 148
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Thermal Stability of Hf~xTa~yN Metal Gate Electrodes for Advanced MOS DevicesCheng, C.-L. / Chang-Liao, K.-S. / Wang, T.-C. / Wang, T.-K. / Wang, H. C.-H. et al. | 2006
- 151
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Electrically bistable memory device based on spin-coated molecular complex thin filmZhengchun Liu, / Fengliang Xue, / Yi Su, / Varahramyan, K. et al. | 2006
- 154
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Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y. / Ling, Q.D. / Zhu, C. / Kang, E.T. / Chan, D.S.H. / Wang, Y.H. / Kwong, D.-L. et al. | 2006
- 157
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Charge Trapping and Degradation of HfO~2/SiO~2 MOS Gate Stacks Observed With Enhanced CAFMAguilera, L. / Porti, M. / Nafria, M. / Aymerich, X. et al. | 2006
- 157
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Charge trapping and degradation of HfO/sub 2//SiO/sub 2/ MOS gate stacks observed with enhanced CAFMAguilera, L. / Porti, M. / Nafria, M. / Aymerich, X. et al. | 2006
- 160
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Yb-doped Ni FUSI for the n-MOSFETs gate electrode applicationChen, J.D. / Yu, H.Y. / Li, M.F. / Kwong, D.-L. / van Dal, M.J.H. / Kittl, J.A. / Lauwers, A. / Absil, P. / Jurczak, M. / Biesemans, S. et al. | 2006
- 163
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Study of the hydrogenation mechanism by rapid thermal anneal of SiN:H in thin-film polycrystalline-silicon solar cellsCarnel, L. / Dekkers, H.F.W. / Gordon, I. / Van Gestel, D. / Van Nieuwenhuysen, K. / Beaucarne, G. / Poortmans, J. et al. | 2006
- 166
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Self-aligned amorphous-silicon TFTs on clear plastic substratesI-Chun Cheng, / Kattamis, A.Z. / Long, K. / Sturm, J.C. / Wagner, S. et al. | 2006
- 169
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Reliable extraction of cycling induced interface states implementing realistic P/E stresses in reference cell: comparison with flash memory cellChang-Ki Baek, / Bomsoo Kim, / Son, Y. / Wookhyun Kwon, / Chan-Kwang Park, / Park, Y.J. / Hong Shick Min, / Kim, D.M. et al. | 2006
- 172
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Temperature effects on trigate SOI MOSFETsColinge, J.-P. / Floyd, L. / Quinn, A.J. / Redmond, G. / Alderman, J.C. / Xiong, W. / Cleavelin, C.R. / Schulz, T. / Schruefer, K. / Knoblinger, G. et al. | 2006
- 175
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Ge n-MOSFETs on Lightly Doped Substrates With High-kappa Dielectric and TaN GateBai, W. P. / Lu, N. / Ritenour, A. / Lee, M. L. / Antoniadis, D. A. / Kwong, D. L. et al. | 2006
- 175
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Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gateBai, W.P. / Lu, N. / Ritenour, A. / Lee, M.L. / Antoniadis, D.A. / Kwong, D.-L. et al. | 2006
- 179
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Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extensionQiuxia Xu, / Xiaofong Duan, / He Qian, / Haihua Liu, / Li, H. / Zhensheng Han, / Ming Liu, / Wenfang Gao, et al. | 2006
- 182
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An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperatureWei Lee, / Pin Su, / Hou-Yu Chen, / Chang-Yun Chang, / Ke-Wei Su, / Liu, S. / Fu-Liang Yang, et al. | 2006
- 185
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Co-Optimization of the Metal Gate/High-k Stack to Achieve High-Field Mobility >90% of SiO~2 Universal Mobility With an EOT= ∼1 nmZhang, Z. / Song, S. C. / Quevedo-Lopez, M. A. / Choi, K. / Kirsch, P. / Lysaght, P. / Lee, B. H. et al. | 2006
- 185
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Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO/sub 2/ universal mobility with an EOT=/spl sim/1 nmZhibo Zhang, / Song, S.C. / Quevedo-Lopez, M.A. / Kisik Choi, / Kirsch, P. / Lysaght, P. / Byoung Hun Lee, et al. | 2006
- 188
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On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D modelSaha, D. / Varghese, D. / Mahapatra, S. et al. | 2006
- 191
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Strained ultrahigh performance fully depleted nMOSFETs with f/sub t/ of 330 GHz and sub-30-nm gate lengthsSingh, D.V. / Jenkins, K.A. / Sleight, J. / Ren, Z. / Ieong, M. / Haensch, W. et al. | 2006
- 191
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Strained Ultrahigh Performance Fully Depleted nMOSFETs With f~t of 330 GHz and Sub-30-nm Gate LengthsSingh, D. V. / Jenkins, K. A. / Sleight, J. / Ren, Z. / Ieong, M. / Haensch, W. et al. | 2006
- 194
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Exploration of a double-tapered disc-loaded circular waveguide for a wideband gyro-TWTKesari, V. / Jain, P.K. / Basu, B.N. et al. | 2006
- 198
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Corrections to "200-mm Wafer Scale Transfer of 0.18$mu$m Dual-Damascene Cu/SiO$_2$Interconnection System to Plastic Substrates"Teh, W.H. / Lihui, G. / Kumar, R. / Kwong, D.-L. et al. | 2006
- 199
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IEEE Electron Devices Society meetings calendar for 2005| 2006
- 201
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IEEE Electron Device Letters Information for authors| 2006
- 202
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Special issue on spintronics| 2006
- 204
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IEEE Transactions on Electron Devices table of contents| 2006
- c1
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Table of contents| 2006
- c2
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IEEE Electron Device Letters publication information| 2006