AlON/SiO~2 Stacked Gate Dielectrics for 4H-SiC MIS Devices (English)
- New search for: Hosoi, T.
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In:
MATERIALS SCIENCE FORUM
;
615/617
;
541-544
;
2009
-
ISSN:
- Article (Journal) / Print
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Title:AlON/SiO~2 Stacked Gate Dielectrics for 4H-SiC MIS Devices
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Contributors:Hosoi, T. ( author ) / Harada, M. ( author ) / Kagei, Y. ( author ) / Watanabe, Y. ( author ) / Shimura, T. ( author ) / Mitani, S. ( author ) / Nakano, Y. ( author ) / Nakamura, T. ( author ) / Watanabe, H. ( author )
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Published in:MATERIALS SCIENCE FORUM ; 615/617 ; 541-544
-
Publisher:
- New search for: Transtec Publications
-
Publication date:2009-01-01
-
Size:4 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 620.11
- Further information on Dewey Decimal Classification
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Classification:
DDC: 620.11 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 615/617
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 0
-
Overview| 2009
- -1
-
Sponsor| 2009
- 3
-
Defect Status in SiC Manufacturing| 2009
- -3
-
Committees| 2009
- -4
-
Preface| 2009
- 7
-
Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method| 2009
- 11
-
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide| 2009
- 15
-
Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method| 2009
- 19
-
Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside| 2009
- 23
-
In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction| 2009
- 27
-
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method| 2009
- 31
-
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase| 2009
- 37
-
High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers| 2009
- 41
-
Top Seeded Solution Growth of 3C-SiC Single Crystals| 2009
- 45
-
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT| 2009
- 49
-
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC| 2009
- 55
-
Thick Epitaxial Layers Growth by Chlorine Addition| 2009
- 61
-
Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition| 2009
- 61
-
Basal Plane Dislocation Mitigation in 8^o Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor DepositionVanMil, B.L. / Stahlbush, R.E. / Myers-Ward, R.L. / Picard, Y.N. / Kitt, S.A. / McCrate, J.M. / Katz, S.L. / Gaskill, D.K. / Eddy, C.R. et al. | 2009
- 67
-
Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer| 2009
- 73
-
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC| 2009
- 77
-
Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV| 2009
- 81
-
Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates| 2009
- 81
-
Growth of 4H-SiC Epitaxial Layers on 4^o Off-Axis Si-Face SubstratesHenry, A. / Leone, S. / Pedersen, H. / Kordina, O. / Janzen, E. et al. | 2009
- 85
-
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates| 2009
- 89
-
Chloride-Based SiC Epitaxial Growth| 2009
- 93
-
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition| 2009
- 97
-
Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth| 2009
- 101
-
Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers| 2009
- 105
-
Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC| 2009
- 105
-
Turning of Basal Plane Dislocations during Epitaxial Growth on 4^o Off-Axis 4H-SiCMyers-Ward, R.L. / VanMil, B.L. / Stahlbush, R.E. / Katz, S.L. / McCrate, J.M. / Kitt, S.A. / Eddy, C.R. / Gaskill, D.K. et al. | 2009
- 109
-
The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality| 2009
- 113
-
Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth| 2009
- 117
-
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC| 2009
- 121
-
Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth| 2009
- 125
-
Inverted Pyramid Defects in 4H-SiC Epilayers| 2009
- 129
-
PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer| 2009
- 133
-
On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications| 2009
- 137
-
Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates| 2009
- 141
-
LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application| 2009
- 145
-
High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)| 2009
- 149
-
Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si| 2009
- 153
-
A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios| 2009
- 157
-
Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer| 2009
- 161
-
Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD| 2009
- 165
-
P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)| 2009
- 169
-
Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon| 2009
- 173
-
Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls| 2009
- 177
-
P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates| 2009
- 181
-
Structural Properties of 3C-SiC Grown by Sublimation Epitaxy| 2009
- 185
-
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates| 2009
- 189
-
Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide| 2009
- 193
-
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase| 2009
- 199
-
Growth of Graphene Layers on Silicon Carbide| 2009
- 203
-
Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates| 2009
- 207
-
TEM Investigations of Graphene on 4H-SiC(0001)| 2009
- 211
-
Graphene Formation on SiC Substrates| 2009
- 215
-
AFM and Raman Studies of Graphene Exfoliated on SiC| 2009
- 219
-
Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)| 2009
- 223
-
Investigation of Graphene Growth on 4H-SiC| 2009
- 227
-
Formation of Different Carbon Phases on SiC| 2009
- 231
-
Study of the Electrical Characteristics of the CNT/SiC Interface| 2009
- 235
-
Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics| 2009
- 239
-
Textile Solar Cells Based on SiC Microwires| 2009
- 245
-
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping| 2009
- 251
-
Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography| 2009
- 255
-
Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping| 2009
- 259
-
Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity| 2009
- 263
-
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC| 2009
- 267
-
Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes| 2009
- 271
-
Dislocation-Induced Birefringence in Silicon Carbide| 2009
- 275
-
Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates| 2009
- 279
-
An Effective Method of Characterization of SiC Substrates| 2009
- 283
-
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers| 2009
- 287
-
Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers| 2009
- 291
-
Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors| 2009
- 295
-
Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay| 2009
- 299
-
Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors| 2009
- 303
-
Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals| 2009
- 307
-
Features of Hot Hole Transport in 6H-SiCSankin, V.I. / Shkrebiy, P.P. / Lepneva, A.A. / Ostroumov, A.G. / Yakimova, R. et al. | 2009
- 307
-
Features of Hot Hole Transport in 6Н-SiC| 2009
- 311
-
Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes| 2009
- 315
-
Accurate Measurements of Second-Order Nonlinear-Optical Coefficients of Silicon Carbide| 2009
- 319
-
Investigation of Thermal Properties of Heavily Doped 4H-SiC Crystals by a Picosecond Transient Grating Technique| 2009
- 323
-
Microhardness of 6H- and 4H-SiC Substrates| 2009
- 327
-
Electrical and Mechanical Properties of Post-Annealed SiCxNy Films| 2009
- 331
-
A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth| 2009
- 335
-
Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films| 2009
- 339
-
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?| 2009
- 343
-
Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC| 2009
- 347
-
The Silicon Vacancy in SiC| 2009
- 353
-
Pulsed EPR Studies of the Tv2a Center in 4H-SiC| 2009
- 357
-
SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC| 2009
- 361
-
Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC| 2009
- 365
-
Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC| 2009
- 369
-
The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC| 2009
- 373
-
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy| 2009
- 377
-
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC| 2009
- 381
-
Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy| 2009
- 385
-
Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy| 2009
- 389
-
Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes| 2009
- 393
-
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS| 2009
- 397
-
Defects in High Energy Ion Irradiated 4H-SiC| 2009
- 401
-
Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC| 2009
- 405
-
Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC| 2009
- 409
-
Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations| 2009
- 413
-
Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing| 2009
- 417
-
Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping| 2009
- 423
-
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4^o Off-Axis 4H-SiC WafersSunkari, S.G. / Das, H. / Hoff, C. / Koshka, Y. / Casady, J.R.B. / Casady, J.B. et al. | 2009
- 423
-
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers| 2009
- 427
-
Interface States and Barrier Heights on Metal/4H-SiC Interfaces| 2009
- 431
-
Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers| 2009
- 435
-
Crystalline Quality and Surface Morphology of 3C-SiC Films on Si Evaluated by Electron Channeling Contrast Imaging| 2009
- 439
-
Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach| 2009
- 443
-
Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties| 2009
- 449
-
Simulation of Ion Implantation in SiC: Dopant Profiling and Activation| 2009
- 453
-
Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC| 2009
- 457
-
Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy| 2009
- 461
-
Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments| 2009
- 465
-
SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2| 2009
- 469
-
C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes| 2009
- 473
-
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions| 2009
- 477
-
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing| 2009
- 481
-
Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation| 2009
- 485
-
Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC| 2009
- 489
-
Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model| 2009
- 493
-
Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide| 2009
- 497
-
Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique| 2009
- 501
-
Characterization of the SiO2/SiC Interface with Impedance Spectroscopy| 2009
- 505
-
Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer| 2009
- 509
-
Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry| 2009
- 513
-
4H-SiC Oxide Characterization with SIMS Using a 13C Tracer| 2009
- 517
-
Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence| 2009
- 521
-
Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO| 2009
- 525
-
Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces| 2009
- 529
-
Oxidation Process of SiC by RTP Technique| 2009
- 533
-
Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer| 2009
- 537
-
Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC| 2009
- 541
-
AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices| 2009
- 545
-
Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC| 2009
- 549
-
Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face| 2009
- 553
-
Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC| 2009
- 557
-
Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation| 2009
- 561
-
High-Temperature Reliable Ni2Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier| 2009
- 565
-
Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN| 2009
- 569
-
Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC| 2009
- 573
-
On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC| 2009
- 577
-
Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC| 2009
- 581
-
Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC| 2009
- 585
-
Process Optimization for High Temperature SiC Lateral Devices| 2009
- 589
-
A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations| 2009
- 593
-
HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces| 2009
- 597
-
Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers| 2009
- 601
-
Electrochemical Polishing of p-Type 4H SiC| 2009
- 605
-
The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC| 2009
- 609
-
Spectroscopic Measurement of Electric Discharge Machining for Silicon Carbide| 2009
- 613
-
SiC Power Devices: Product Improvement Using Diffusion Soldering| 2009
- 617
-
SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates| 2009
- 621
-
Performance Modification of SiC MEMS| 2009
- 625
-
Single Crystal and Polycrystalline 3C-SiC for MEMS Applications| 2009
- 629
-
Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films| 2009
- 633
-
3C-SiC Films on Si for MEMS Applications: Mechanical Properties| 2009
- 637
-
Bottom-Up Routes to Porous Silicon Carbide| 2009
- 643
-
Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure| 2009
- 647
-
4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts| 2009
- 651
-
Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC| 2009
- 655
-
Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)| 2009
- 659
-
Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement| 2009
- 663
-
Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode| 2009
- 667
-
The Impact of Schottky Barrier Tunneling on SiC-JBS Performance| 2009
- 671
-
Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses| 2009
- 675
-
Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer| 2009
- 679
-
Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation| 2009
- 683
-
Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC| 2009
- 687
-
Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET| 2009
- 691
-
Grayscale Junction Termination for High-Voltage SiC Devices| 2009
- 695
-
Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage| 2009
- 699
-
Lifetime Investigations of 4H-SiC PiN Power Diodes| 2009
- 703
-
Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique| 2009
- 707
-
EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes| 2009
- 711
-
VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications| 2009
- 715
-
Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications| 2009
- 719
-
Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors| 2009
- 723
-
High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress| 2009
- 727
-
High Temperature Characteristics of 4H-SiC RESURF-Type JFET| 2009
- 731
-
Electro-Thermal SPICE Model for High-Voltage SiC VJFETs| 2009
- 735
-
Silicon Carbide Static Induction Transistor with Implanted Buried Gate| 2009
- 739
-
Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)| 2009
- 743
-
Critical Issues for MOS Based Power Devices in 4H-SiC| 2009
- 749
-
Performance of 60 A, 1200 V 4H-SiC DMOSFETs| 2009
- 753
-
Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure| 2009
- 757
-
1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face| 2009
- 761
-
Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET| 2009
- 765
-
High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer| 2009
- 769
-
Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge| 2009
- 773
-
Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs| 2009
- 777
-
Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties| 2009
- 781
-
Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs| 2009
- 785
-
Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates| 2009
- 789
-
High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces| 2009
- 793
-
Ab Initio Calculations of SiO2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face| 2009
- 797
-
Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs| 2009
- 801
-
Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers| 2009
- 805
-
Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs| 2009
- 809
-
Implications of Threshold-Voltage Instability on SiC DMOSFET Operation| 2009
- 813
-
Channel Hot-Carrier Effect of 4H-SiC MOSFET| 2009
- 817
-
Low Frequency Noise in 4H-SiC MOSFETs| 2009
- 821
-
A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT| 2009
- 825
-
Assessment of High and Low Temperature Performance of SiC BJTs| 2009
- 829
-
4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile| 2009
- 829
-
4H-SiC Bipolar Junction Transistors with Graded Based Doping ProfileZhang, J.H. / Fursin, L. / Li, X.Q. / Wang, X.H. / Zhao, J.H. / VanMil, B.L. / Myers-Ward, R.L. / Eddy, C.R. / Gaskill, D.K. et al. | 2009
- 833
-
Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability| 2009
- 837
-
Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors| 2009
- 841
-
Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE| 2009
- 845
-
Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors| 2009
- 849
-
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 ^oCIvanov, A.M. / Kalinina, E.V. / Strokan, N.B. / Lebedev, A.A. et al. | 2009
- 849
-
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C| 2009
- 853
-
Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 ^oCIvanov, A.M. / Strokan, N.B. / Lebedev, A.A. / Kozlovski, V.V. et al. | 2009
- 853
-
Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C| 2009
- 857
-
Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe| 2009
- 861
-
Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV| 2009
- 865
-
Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes| 2009
- 869
-
6H and 4H-SiC Avalanche Photodiodes| 2009
- 873
-
Solar-Blind 4H-SiC Avalanche Photodiodes| 2009
- 877
-
Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability| 2009
- 881
-
High Temperature Characteristics for UV Responsivity of 3C-SiC pn Photodiode| 2009
- 885
-
Silicon Carbide UV Based Photovoltaic for Hostile Environments| 2009
- 889
-
Perspectives of SiC Power Devices in Highly Efficient Renewable Energy Conversion Systems| 2009
- 895
-
Applications of SiC-Transistors in Photovoltaic Inverters| 2009
- 899
-
100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules| 2009
- 903
-
Substantial Reduction of Power Loss in a 14kVA Inverter Using Paralleled SiC-MOSFETs and SiC-SBDs| 2009
- 907
-
Comparison of SiC-JFET and Si-IGBT Inverter Losses| 2009
- 911
-
High Power Density SiC 450A AccuMOSFET for Current Limiting Applications| 2009
- 915
-
Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design| 2009
- 919
-
Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications| 2009
- 925
-
300°C SiC Blocking Diodes for Solar Array Strings| 2009
- 925
-
300^oC SiC Blocking Diodes for Solar Array StringsMaset, E. / Sanchis-Kilders, E. / Brosselard, P. / Jorda, X. / Vellvehi, M. / Godignon, P. et al. | 2009
- 929
-
Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry| 2009
- 929
-
Prolonged 500 ^oC Operation of 6H-SiC JFET Integrated CircuitryNeudeck, P.G. / Spry, D.J. / Chen, L.Y. / Chang, C.W. / Beheim, G.M. / Okojie, R.S. / Evans, L.J. / Meredith, R.D. / Ferrier, T.L. / Krasowski, M.J. et al. | 2009
- 935
-
GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation| 2009
- 939
-
Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut| 2009
- 943
-
Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates| 2009
- 947
-
Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN| 2009
- 951
-
Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions| 2009
- 955
-
Process Parameters Influence on Specific Contact Resistance (SCR) Value for TiAl Ohmic Contacts on GaN Grown on Sapphire| 2009
- 959
-
Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces| 2009
- 963
-
High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure| 2009
- 967
-
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures| 2009
- 971
-
High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate| 2009
- 975
-
Two Broadband GaN MMIC Power Amplifiers for EW Systems| 2009
- 979
-
Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction| 2009
- 983
-
Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates| 2009
- 987
-
Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)| 2009
- 991
-
Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD| 2009
- 995
-
Metal Contacts to Boron-Doped Diamond| 2009
- 999
-
Recent Progress of Diamond Device toward Power Application| 2009
- 1003
-
Device Characteristics Dependence on Diamond SDBs Area| 2009