Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation (English)
- New search for: Koehler, A. D.
- New search for: Nepal, N.
- New search for: Anderson, T. J.
- New search for: Tadjer, M. J.
- New search for: Hobart, K. D.
- New search for: Eddy, C. R.
- New search for: Kub, F. J.
- New search for: Koehler, A. D.
- New search for: Nepal, N.
- New search for: Anderson, T. J.
- New search for: Tadjer, M. J.
- New search for: Hobart, K. D.
- New search for: Eddy, C. R.
- New search for: Kub, F. J.
In:
IEEE ELECTRON DEVICE LETTERS
;
34
, 9
;
1115-1117
;
2013
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ISSN:
- Article (Journal) / Print
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Title:Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
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Contributors:Koehler, A. D. ( author ) / Nepal, N. ( author ) / Anderson, T. J. ( author ) / Tadjer, M. J. ( author ) / Hobart, K. D. ( author ) / Eddy, C. R. ( author ) / Kub, F. J. ( author )
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Published in:IEEE ELECTRON DEVICE LETTERS ; 34, 9 ; 1115-1117
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2013-01-01
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Size:3 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 34, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1079
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Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage SpectroscopyLi, Hao / Zeng, Xiangbo / Yang, Ping / Zhang, Xiaodong / Xie, Xiaobing / Li, Jingyan / Wang, Qiming et al. | 2013
- 1082
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STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact ResistivityMajumdar, Kausik / Vivekanand, Saikumar / Huffman, Craig / Matthews, Ken / Ngai, Tat / Chen, Chien Hao / Baek, Rock Hyun / Loh, Wei Yip / Rodgers, Martin / Stamper, Harlan et al. | 2013
- 1085
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Performance Improvement in RF LDMOS Transistors Using Wider Drain ContactChen, Kun-Ming / Chen, Bo-Yuan / Chiu, Chia-Sung / Huang, Guo-Wei / Chen, Chun-Hao / Lin, Horng-Chih / Huang, Tiao-Yuan / Chen, Ming-Yi / Yang, Yu-Chi / Jaw, Brenda et al. | 2013
- 1088
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Characterization of Multilayer Metal Gate Fuse in 28-nm CMOS Logic TechnologyHsieh, Min-Che / Lin, Yu-Cheng / Chin, Yung-Wen / Chang, Tzong-Sheng / King, Ya-Chin / Lin, Chrong-Jung et al. | 2013
- 1091
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500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiCLanni, Luigia / Malm, Bengt Gunnar / Ostling, Mikael / Zetterling, Carl-Mikael et al. | 2013
- 1091
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500 Formula Not Shown Bipolar Integrated OR/NOR Gate in 4H-SiCLanni, L. / Malm, B. G. / Ostling, M. / Zetterling, C. M. et al. | 2013
- 1094
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A Traveling-Wave CMOS SPDT Using Slow-Wave Transmission Lines for Millimeter-Wave ApplicationTang, Xiao-Lan / Pistono, Emmanuel / Ferrari, Philippe / Fournier, Jean-Michel et al. | 2013
- 1097
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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge Formula Not Shown Diode Achieved by Multiple Implantation and Multiple Annealing TechniqueLi, Z. / An, X. / Yun, Q. / Lin, M. / Li, M. / Zhang, X. / Huang, R. et al. | 2013
- 1097
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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge ${\rm n}^{+}/{\rm p}$ Diode Achieved by Multiple Implantation and Multiple Annealing TechniqueLi, Zhiqiang / An, Xia / Yun, Quanxin / Lin, Meng / Li, Min / Li, Ming / Zhang, Xing / Huang, Ru et al. | 2013
- 1100
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Efficient and Accurate Schematic Transistor Model of FinFET Parasitic ElementsLu, Ning / Hook, Terence B. / Johnson, Jeffrey B. / Wermer, Carl / Putnam, Christopher / Wachnik, Richard A. et al. | 2013
- 1103
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Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate LengthBarraud, Sylvain / Coquand, Remi / Hartmann, Jean-Michel / Maffini-Alvaro, Virginie / Samson, Marie-Pierre / Tosti, Lucie / Allain, Fabienne et al. | 2013
- 1106
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Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTsLiu, Cheng / Liu, Shenghou / Huang, Sen / Chen, Kevin J. et al. | 2013
- 1109
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Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching OperationKashiwagi, Junichi / Fujiwara, Tetsuya / Akutsu, Minoru / Ito, Norikazu / Chikamatsu, Kentaro / Nakahara, Ken et al. | 2013
- 1112
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Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTsLagger, Peter / Schiffmann, Alexander / Pobegen, Gregor / Pogany, Dionyz / Ostermaier, Clemens et al. | 2013
- 1115
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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT PassivationKoehler, Andrew D. / Nepal, Neeraj / Anderson, Travis J. / Tadjer, Marko J. / Hobart, Karl D. / Eddy, Charles R. / Kub, Francis J. et al. | 2013
- 1118
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High-Speed, Enhancement-Mode GaN Power Switch With Regrown Formula Not Shown GaN Ohmic Contacts and Staircase Field PlatesBrown, D. F. / Shinohara, K. / Corrion, A. L. / Chu, R. / Williams, A. / Wong, J. C. / Alvarado-Rodriguez, I. / Grabar, R. / Johnson, M. / Butler, C. M. et al. | 2013
- 1118
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High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field PlatesBrown, David F. / Shinohara, Keisuke / Corrion, Andrea L. / Chu, Rongming / Williams, Adam / Wong, Joel C. / Alvarado-Rodriguez, Ivan / Grabar, Robert / Johnson, Michael / Butler, Colleen M. et al. | 2013
- 1121
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Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD SimulationsMiccoli, Cristina / Martino, Valeria Cinnera / Reina, Santo / Rinaudo, Salvatore et al. | 2013
- 1124
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Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM TechnologyYang, Chia-Ming / Wang, Jer-Chyi / Lee, Wei-Ping / Lee, Chien-Chi / Lin, Chih-Hung / Lee, Chung Yuan / Lin, Jo-Hui / Chen, Hsin-Huei / Hsiao, Chih-Yuan / Chang, Ruey-Dar et al. | 2013
- 1127
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New High-Density Differential Split Gate Flash Memory With Self-Boosting FunctionShen, Wen Chao / Lee, Te-Liang / Pan, Hsin-Wei / Yang, Zhi-Sung / Chih, Yue-Der / Lien, Chiu-Wang / King, Ya-Chin / Lin, Chrong Jung et al. | 2013
- 1130
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Improved Switching Uniformity and Low-Voltage Operation in Formula Not Shown -Based RRAM Using Ge Reactive LayerZhuo, V. Y. / Jiang, Y. / Zhao, R. / Shi, L. P. / Yang, Y. / Chong, T. C. / Robertson, J. et al. | 2013
- 1130
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Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive LayerZhuo, Victor Yi-Qian / Jiang, Yu / Zhao, Rong / Shi, Lu Ping / Yang, Yi / Chong, Tow Chong / Robertson, John et al. | 2013
- 1133
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Development of a Semiempirical Compact Model for DC/AC Cell Operation of ${\rm HfO}_{\rm{x}}$-Based ReRAMsNoh, Jinwoo / Jo, Minseok / Kang, Chang Yong / Gilmer, David / Kirsch, Paul / Lee, Jack C. / Lee, Byoung Hun et al. | 2013
- 1133
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Development of a Semiempirical Compact Model for DC/AC Cell Operation of Formula Not Shown -Based ReRAMsNoh, J. / Jo, M. / Kang, C. Y. / Gilmer, D. / Kirsch, P. / Lee, J. C. / Lee, B. H. et al. | 2013
- 1136
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Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention CharacteristicsMishra, Abhishek / Janardanan, Amritha / Khare, Manali / Kalita, Hemen / Kottantharayil, Anil et al. | 2013
- 1139
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Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash MemoryKang, Duckseoung / Lee, Kyunghwan / Seo, Seongjun / Kim, Shinhyung / Lee, Ji-Seok / Bae, Dong-Seok / Li, Dong Hua / Hwang, Yuchul / Shin, Hyungcheol et al. | 2013
- 1142
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Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication TechnologySakuma, Kiwamu / Kusai, Haruka / Fujii, Shosuke / Koyama, Masato et al. | 2013
- 1145
-
High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory ApplicationsMondal, Somnath / Chueh, Ching-Hao / Pan, Tung-Ming et al. | 2013
- 1145
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High-Performance Flexible Formula Not Shown ReRAM Device for Low-Power Nonvolatile Memory ApplicationsMondal, S. / Chueh, C. H. / Pan, T. M. et al. | 2013
- 1148
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High-Speed Voltage-Programmed Pixel Circuit for AMOLED Displays Employing Threshold Voltage One-Time Detection MethodWu, Wei-Jing / Xia, Xing-Heng / Li, Guan-Ming / Zhou, Lei / Zhang, Li-Rong / Yao, Ruo-He / Peng, Jun-Biao et al. | 2013
- 1151
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Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film TransistorsJang, Kyungsoo / Raja, Jayapal / Lee, Youn-Jung / Kim, Doyoung / Yi, Junsin et al. | 2013
- 1154
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Electrical Performance Enhancement of Al–Zn-Sn–O Thin Film Transistor by Supercritical Fluid TreatmentTeng, Li-Feng / Liu, Po-Tsun / Wang, Wei-Ya et al. | 2013
- 1157
-
Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process ApplicationFuh, Chur-Shyang / Liu, Po-Tsun / Teng, Li-Feng / Huang, Sih-Wei / Lee, Yao-Jen / Shieh, Han-Ping D. / Sze, Simon M. et al. | 2013
- 1160
-
Fabrication of High-Performance ZnO Thin-Film Transistors With Submicrometer Channel LengthLin, Horng-Chih / Lyu, Rong-Jhe / Huang, Tiao-Yuan et al. | 2013
- 1163
-
Improved Rear-Side Passivation by Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}/{\rm SiN}_{x}$ Stack Layers for High $V_{\rm OC}$ Industrial $p$-Type Silicon Solar CellsLin, Je-Wei / Chen, Yi-Yang / Gan, Jon-Yiew / Hseih, Wei-Ping / Du, Chen-Hsu / Chao, Tien-Sheng et al. | 2013
- 1163
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Improved Rear-Side Passivation by Atomic Layer Deposition Formula Not Shown Stack Layers for High Formula Not Shown Industrial Formula Not Shown -Type Silicon Solar CellsLin, J. W. / Chen, Y. Y. / Gan, J. Y. / Hseih, W. P. / Du, C. H. / Chao, T. S. et al. | 2013
- 1166
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Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTsLin, Chih-Lung / Chang, Wen-Yen / Hung, Chia-Che et al. | 2013
- 1169
-
Ultraviolet Photodetector Fabricated From Multiwalled Carbon Nanotubes/Zinc-Oxide Nanowires/p-GaN Composite StructureShao, Dali / Yu, Mingpeng / Lian, Jie / Sawyer, Shayla M. L. et al. | 2013
- 1172
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Thermal Transient Effect and Improved Junction Temperature Measurement Method in High-Voltage Light-Emitting DiodesYe, Huaiyu / Chen, Xianping / van Zeijl, Henk / Gielen, Alexander W. J. / Zhang, Guoqi et al. | 2013
- 1175
-
High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n JunctionsIwasaki, Takayuki / Hoshino, Yuto / Tsuzuki, Kohei / Kato, Hiromitsu / Makino, Toshiharu / Ogura, Masahiko / Takeuchi, Daisuke / Okushi, Hideyo / Yamasaki, Satoshi / Hatano, Mutsuko et al. | 2013
- 1178
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High Holding Voltage SCR-LDMOS Stacking Structure With Ring-Resistance-Triggered TechniqueMa, Fei / Zhang, Bin / Han, Yan / Zheng, Jianfeng / Song, Bo / Dong, Shurong / Liang, Hailian et al. | 2013
- 1181
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Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN FilmsHong, Seok Man / Kim, Hee-Dong / An, Ho-Myoung / Kim, Tae Geun et al. | 2013
- 1184
-
Reduction of Ohmic Contact Resistance of Solid Phase Regrowth Contacts to n-InGaAs Using a Sulfur PretreatmentYearsley, Joshua D. / Lin, Joyce C. / Mohney, Suzanne E. et al. | 2013
- 1187
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Superior Electrostrictive Strain Behavior of Antiferroelectric Formula Not Shown Thick Film Microcantilevers for MEMS Device ApplicationsChou, X. / Guan, X. / Lv, Y. / Geng, W. / Liu, J. / Xue, C. / Zhang, W. et al. | 2013
- 1187
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Superior Electrostrictive Strain Behavior of Antiferroelectric $({\rm Pb}, {\rm La})({\rm Zr}, {\rm Ti}){\rm O}_{3}$ Thick Film Microcantilevers for MEMS Device ApplicationsChou, Xiujian / Guan, Xinfeng / Lv, Yongbo / Geng, Wenping / Liu, Jun / Xue, Chenyang / Zhang, Wendong et al. | 2013
- 1190
-
Lateral Graphene Heterostructure Field-Effect TransistorMoon, Jeong S. / Seo, Hwa-chang / Stratan, Fred / Antcliffe, Mike / Schmitz, Adele / Ross, Richard S. / Kiselev, Andrey A. / Wheeler, Virginia D. / Nyakiti, Luke O. / Gaskill, D. Kurt et al. | 2013
- 1193
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Improving High-Frequency Characteristics of Graphene FETs by Field-Controlling ElectrodesAl-Amin, Chowdhury / Vabbina, Phani Kiran / Karabiyik, Mustafa / Sinha, Raju / Pala, Nezih / Choi, Wongbong et al. | 2013
- 1196
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Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed Formula Not Shown -L ValleysMehrotra, S. R. / Povolotskyi, M. / Elias, D. C. / Kubis, T. / Law, J. J. / Rodwell, M. J. / Klimeck, G. et al. | 2013
- 1196
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Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L ValleysMehrotra, Saumitra R. / Povolotskyi, Michael / Elias, Doron Cohen / Kubis, Tillmann / Law, Jeremy J. M. / Rodwell, Mark J. W. / Klimeck, Gerhard et al. | 2013
- 1199
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Correction to “Improved Low-Voltage-Triggered SCR Structure for RF-ESD Protection”Ma, Fei / Han, Yan / Dong, Shurong / Miao, Meng / Liang, Hailiang et al. | 2013
- 1200
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Correction to "Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy"Han, Yulong / Huo, Zongliang / Li, Xinkai / Chen, Guoxing / Yang, Xiaonan / Zhang, Dong / Wang, Yong / Ye, Tianchun / Liu, Ming et al. | 2013
- 1201
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- 1203
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IEEE Electron Device Letters information for authors| 2013
- 1204
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IEEE International Integrated Reliability Workshop (IIRW)| 2013
- 1205
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- 1206
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- 1207
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- C2
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