Crystal polarity role in Mg incorporation during GaN solution growth (English)
- New search for: Freitas, J. A.
- New search for: Feigelson, B. N.
- New search for: Anderson, T. J.
- New search for: Freitas, J. A.
- New search for: Feigelson, B. N.
- New search for: Anderson, T. J.
In:
JOURNAL OF CRYSTAL GROWTH
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403
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90-95
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2014
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ISSN:
- Article (Journal) / Print
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Title:Crystal polarity role in Mg incorporation during GaN solution growth
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Contributors:
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Published in:JOURNAL OF CRYSTAL GROWTH ; 403 ; 90-95
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Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
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Publication date:2014-01-01
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Size:6 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 548
- Further information on Dewey Decimal Classification
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Classification:
DDC: 548 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 403
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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PrefaceFreitas, Jaime A. Jr. / Meissner, Elke / Paskova, Tania / Miyake, Hideto et al. | 2014
- 3
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Development of GaN wafers via the ammonothermal methodLetts, Edward / Hashimoto, Tadao / Hoff, Sierra / Key, Daryl / Male, Keith / Michaels, Mathew et al. | 2014
- 7
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Improved growth rates and purity of basic ammonothermal GaNPimputkar, S. / Kawabata, S. / Speck, J.S. / Nakamura, S. et al. | 2014
- 18
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Highly transparent ammonothermal bulk GaN substratesJiang, Wenkan / Ehrentraut, Dirk / Downey, Bradley C. / Kamber, Derrick S. / Pakalapati, Rajeev T. / Yoo, Hak Do / D’Evelyn, Mark P. et al. | 2014
- 22
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Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growthZhang, Shiyu / Alt, Nicolas S.A. / Schlücker, Eberhard / Niewa, Rainer et al. | 2014
- 29
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Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactorBaker, Troy / Mayo, Ashley / Veisi, Zeinab / Lu, Peng / Schmitt, Jason et al. | 2014
- 32
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HVPE-GaN growth on misoriented ammonothermal GaN seedsSochacki, T. / Amilusik, M. / Lucznik, B. / Fijalkowski, M. / Weyher, J.L. / Nowak, G. / Sadovyi, B. / Kamler, G. / Kucharski, R. / Iwinska, M. et al. | 2014
- 38
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Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxyKoyama, Koji / Aida, Hideo / Kim, Seong-Woo / Ikejiri, Kenjiro / Doi, Toshiro / Yamazaki, Tsutomu et al. | 2014
- 43
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Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxyNovikov, S.V. / Powell, R.E. L. / Staddon, C.R. / Kent, A.J. / Foxon, C.T. et al. | 2014
- 48
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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAmilusik, M. / Sochacki, T. / Lucznik, B. / Fijalkowski, M. / Smalc-Koziorowska, J. / Weyher, J.L. / Teisseyre, H. / Sadovyi, B. / Bockowski, M. / Grzegory, I. et al. | 2014
- 55
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Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxyYamane, Keisuke / Hashimoto, Yasuhiro / Okada, Narihito / Tadatomo, Kazuyuki et al. | 2014
- 59
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Feasibility of density and viscosity measurements under ammonothermal conditionsSteigerwald, Thomas G. / Alt, Nicolas S.A. / Hertweck, Benjamin / Schluecker, Eberhard et al. | 2014
- 66
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Structural defects in bulk GaNLiliental-Weber, Z. / dos Reis, R. / Mancuso, M. / Song, C.Y. / Grzegory, I. / Porowski, S. / Bockowski, M. et al. | 2014
- 72
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Optical and electrical properties of dislocations in plastically deformed GaNYonenaga, I. / Ohno, Y. / Yao, T. / Edagawa, K. et al. | 2014
- 77
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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWeyher, J.L. / Sochacki, T. / Amilusik, M. / Fijałkowski, M. / Łucznik, B. / Jakieła, R. / Staszczak, G. / Nikolenko, A. / Strelchuk, V. / Sadovyi, B. et al. | 2014
- 83
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Metastable nature of InN and In-rich InGaN alloysIvanov, S.V. / Shubina, T.V. / Komissarova, T.A. / Jmerik, V.N. et al. | 2014
- 90
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Crystal polarity role in Mg incorporation during GaN solution growthFreitas, Jaime A. Jr. / Feigelson, Boris N. / Anderson, Travis J. et al. | 2014
- 96
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Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapesErlekampf, J. / Seebeck, J. / Savva, P. / Meissner, E. / Friedrich, J. / Alt, N.S.A. / Schlücker, E. / Frey, L. et al. | 2014
- 105
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DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixtureKempisty, Pawel / Strak, Pawel / Sakowski, Konrad / Krukowski, Stanislaw et al. | 2014
- 110
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Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux techniqueEdgar, J.H. / Hoffman, T.B. / Clubine, B. / Currie, M. / Du, X.Z. / Lin, J.Y. / Jiang, H.X. et al. | 2014
- 114
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Vacancy–hydrogen complexes in ammonothermal GaNTuomisto, F. / Kuittinen, T. / Zając, M. / Doradziński, R. / Wasik, D. et al. | 2014
- 119
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Optical and magnetic resonance studies of Be-doped GaN bulk crystalsGlaser, E.R. / Freitas, J.A. Jr / Storm, D.F. / Teisseyre, Henryk / Boćkowski, Michal et al. | 2014
- 124
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Bulk properties of InN films determined by experiments and theoryKumar, M. / Baldissera, G. / Persson, C. / David, D.G.F. / da Silva, M.V.S. / Freitas, J.A. Jr. / Tischler, J.G. / Chubaci, J.F.D. / Matsuoka, M. / Ferreira da Silva, A. et al. | 2014
- IFC
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Editorial Board| 2014