>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning (English)
- New search for: Moon, J. S.
- New search for: Grabar, R.
- New search for: Brown, D.
- New search for: Alvarado-Rodriguez, I.
- New search for: Wong, D.
- New search for: Schmitz, A.
- New search for: Fung, H.
- New search for: Chen, P.
- New search for: Kang, J.
- New search for: Kim, S.
- New search for: Moon, J. S.
- New search for: Grabar, R.
- New search for: Brown, D.
- New search for: Alvarado-Rodriguez, I.
- New search for: Wong, D.
- New search for: Schmitz, A.
- New search for: Fung, H.
- New search for: Chen, P.
- New search for: Kang, J.
- New search for: Kim, S.
In:
IEEE ELECTRON DEVICE LETTERS
;
37
, 3
;
272-275
;
2016
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ISSN:
- Article (Journal) / Print
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Title:>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning
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Contributors:Moon, J. S. ( author ) / Grabar, R. ( author ) / Brown, D. ( author ) / Alvarado-Rodriguez, I. ( author ) / Wong, D. ( author ) / Schmitz, A. ( author ) / Fung, H. ( author ) / Chen, P. ( author ) / Kang, J. ( author ) / Kim, S. ( author )
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Published in:IEEE ELECTRON DEVICE LETTERS ; 37, 3 ; 272-275
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2016-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 37, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 241
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Changes to the Editorial BoardKing Liu, Tsu-Jae et al. | 2016
- 242
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Effect of p-Type Buried Layer Dose on Hot Carrier Degradation of $R_{{\mathrm{\scriptscriptstyle ON}}}$ in 700 V Triple RESURF nLDMOSMao, Kun / Nie, Hai / Yao, Yao et al. | 2016
- 245
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Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade SwitchingJo, Jaesung / Shin, Changhwan et al. | 2016
- 249
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Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term MemoriesKim, Hyungjin / Park, Jungjin / Kwon, Min-Woo / Lee, Jong-Ho / Park, Byung-Gook et al. | 2016
- 253
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Gate-First High-Performance Germanium nMOSFET and pMOSFET Using Low Thermal Budget Ion Implantation After Germanidation TechniqueChang, Wen-Hsin / Ota, Hiroyuki / Maeda, Tatsuro et al. | 2016
- 257
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Design and Simulation of a Novel Bipolar Digital Logic Technology for a Balanced Performance in 4H-SiCElgabra, Hazem / Siddiqui, Amna / Singh, Shakti et al. | 2016
- 261
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InAs FinFETs With $\textrm {H}_{\mathrm {fin}}=20$ nm Fabricated Using a Top–Down Etch ProcessOxland, R. / Li, X. / Chang, S. W. / Wang, S. W. / Vasen, T. / Ramvall, P. / Contreras-Guerrero, R. / Rojas-Ramirez, J. / Holland, M. / Doornbos, G. et al. | 2016
- 265
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Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMTHua, Mengyuan / Lu, Yunyou / Liu, Shenghou / Liu, Cheng / Fu, Kai / Cai, Yong / Zhang, Baoshun / Chen, Kevin J. et al. | 2016
- 269
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An Experimental Demonstration of GaN CMOS TechnologyChu, Rongming / Cao, Yu / Chen, Mary / Li, Ray / Zehnder, Daniel et al. | 2016
- 272
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>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic TuningMoon, J. S. / Grabar, R. / Brown, D. / Alvarado-Rodriguez, I. / Wong, D. / Schmitz, A. / Fung, H. / Chen, P. / Kang, J.-C. / Kim, S. et al. | 2016
- 276
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Charge Storage and Variable Temperature Data Retention Characteristics of Nitrided Titanium Oxide Nonvolatile Memory DeviceKe, Po-Hsien / Li, Jeng-Ting / Hou, Guan-Ting / Chen, Jen-Sue et al. | 2016
- 280
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Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access MemoryChen, Po-Hsun / Chang, Kuan-Chang / Chang, Ting-Chang / Tsai, Tsung-Ming / Pan, Chih-Hung / Chu, Tian-Jian / Chen, Min-Chen / Huang, Hui-Chun / Lo, Ikai / Zheng, Jin-Cheng et al. | 2016
- 284
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Studying Trapped Tunneling-Electron Migration Due to Program and Erase Cycles in NAND FlashKang, Myounggon / Yang, Joon-Sung / Chang, Ik-Joon et al. | 2016
- 287
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Flexible Low-Voltage In–Zn–O Homojunction TFTs With Beeswax Gate Dielectric on Paper SubstratesJiang, Shuanghe / Feng, Ping / Yang, Yi / Du, Peifu / Shi, Yi / Wan, Qing et al. | 2016
- 291
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Lateral Grain Growth of Amorphous Silicon Films With Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTsJin, Seonghyun / Choe, Younwoo / Lee, Suhui / Kim, Tae-Woong / Mativenga, Mallory / Jang, Jin et al. | 2016
- 295
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Electrical Instability of p-Channel SnO Thin-Film Transistors Under Light IlluminationLee, Jeong-Hwan / Choi, Yong-Jin / Jeong, Chan-Yong / Jung, Dong-Kyu / Ham, Soohoon / Kwon, Hyuck-In et al. | 2016
- 299
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Short-Term Plasticity and Synaptic Filtering Emulated in Electrolyte-Gated IGZO TransistorsWan, Xiang / Yang, Yi / Feng, Ping / Shi, Yi / Wan, Qing et al. | 2016
- 303
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High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect MobilityKuan, Chin-I / Lin, Horng-Chih / Li, Pei-Wen / Huang, Tiao-Yuan et al. | 2016
- 306
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Improving the Blue Response and Efficiency of Multicrystalline Silicon Solar Cells by Surface NanotexturingFeng, Ping / Liu, Guyan / Wu, Weiwei / Shi, Yi / Wan, Qing et al. | 2016
- 310
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On the Identification of Buffer Trapping for Bias-Dependent Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back BarrierHu, Jie / Stoffels, Steve / Lenci, Silvia / Groeseneken, Guido / Decoutere, Stefaan et al. | 2016
- 314
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3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide FieldHarada, Shinsuke / Kobayashi, Yusuke / Ariyoshi, Keiko / Kojima, Takahito / Senzaki, Junji / Tanaka, Yasunori / Okumura, Hajime et al. | 2016
- 317
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4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n− SubstratesChowdhury, Sauvik / Hitchcock, Collin / Stum, Zachary / Dahal, Rajendra / Bhat, Ishwara B. / Chow, T. Paul et al. | 2016
- 321
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Influence of Au-Based Metallization on the Phase Velocity of GaN on Si Surface Acoustic Wave ResonatorsStefanescu, Alexandra / Muller, Alexandru / Giangu, Ioana / Dinescu, Adrian / Konstantinidis, George et al. | 2016
- 325
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Design and Simulation of Piezoelectric-Charge-Gated Thin-Film Transistor for Tactile SensingLi, Weiwei / Weldon, Jeffrey A. / Huang, Yihua / Wang, Kai et al. | 2016
- 329
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A Broadside-Coupled Meander-Line Resonator in 0.13- $\mu \text{m}$ SiGe Technology for Millimeter-Wave ApplicationChakraborty, Sudipta / Yang, Yang / Zhu, Xi / Sevimli, Oya / Xue, Quan / Esselle, Karu / Heimlich, Michael et al. | 2016
- 333
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Graphene FET Gigabit ON–OFF Keying Demodulator at 96 GHzHabibpour, Omid / He, Zhongxia Simon / Strupinski, Wlodek / Rorsman, Niklas / Ciuk, Tymoteusz / Ciepielewski, Pawel / Zirath, Herbert et al. | 2016
- 337
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Uniform Strain in Heterostructure Tunnel Field-Effect TransistorsVerreck, Devin / Verhulst, Anne S. / Van de Put, Maarten L. / Soree, Bart / Collaert, Nadine / Mocuta, Anda / Thean, Aaron / Groeseneken, Guido et al. | 2016
- 341
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Electrostrictive Tunable Capacitors and High-Performance 2D Crystal Transistors for Energy-Efficient ApplicationsJana, Raj K. / Snider, Gregory L. et al. | 2016
- 345
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High-Current Tunneling FETs With ( $1\bar {1}0$ ) Orientation and a Channel HeterojunctionLong, Pengyu / Huang, Jun Z. / Povolotskyi, Michael / Klimeck, Gerhard / Rodwell, Mark J. W. et al. | 2016
- 349
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EDS Meetings Calendar| 2016
- 351
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IEEE Electron Device Letters information for authors| 2016
- 352
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JJ EBERS Award| 2016
- 353
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2016 IEEE eds early career award| 2016
- 354
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Table of contents| 2016
- C2
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IEEE Electron Device Letters publication information| 2016