A New Permanganate-Free Slurry for GaN-SiC CMP Applications (English)
- New search for: Fang, T.
- New search for: Chen, P. C.
- New search for: Lee, M. H.
- New search for: Fang, T.
- New search for: Chen, P. C.
- New search for: Lee, M. H.
In:
Silicon carbide and related materials 2019
; 199-205
;
2020
-
ISBN:
- Conference paper / Print
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Title:A New Permanganate-Free Slurry for GaN-SiC CMP Applications
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Contributors:
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Conference:International Conference on Silicon Carbide and Related Materials ; 18. ; 2019 ; Kyōto
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Published in:
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Publisher:
- New search for: Trans Tech Publications Ltd
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Place of publication:Baech
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Publication date:2020
-
ISBN:
-
Type of media:Conference paper
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Type of material:Print
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Language:English
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Source:
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 5
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Fast 4H-SiC Bulk Growth by High-Temperature Gas Source MethodTokuda, Y. / Hoshino, N. / Kuno, H. / Uehigashi, H. / Okamoto, T. / Kanda, T. / Ohya, N. / Kamata, I. / Tsuchida, H. et al. | 2020
- 14
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Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition MethodOkamoto, T. / Kanda, T. / Tokuda, Y. / Ohya, N. / Betsuyaku, K. / Hoshino, N. / Kamata, I. / Tsuchida, H. et al. | 2020
- 20
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Investigation of Carbon Inclusions in SiC Crystals Grown by PVT MethodXie, X. J. / Yu, J. Y. / Yang, X. L. / Chen, X. F. / Xu, X. G. / Hu, X. B. / Liu, X. T. / Liu, D. et al. | 2020
- 26
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Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling ProcessPark, J. H. / Jang, B. K. / Choi, J. W. / Yang, E. / Kim, J. G. / Ko, S. K. / Kyun, M. O. / Ku, K. R. / Kim, D. S. / Lee, W . J. et al. | 2020
- 32
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Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC WaferJang, B. K. / Park, J. H. / Choi, J. W. / Yang, E. / Kim, J. G. / Ko, S. K. / Kyun, M. O. / Ku, K. R. / Jang, Y. S. / Lee, W. J. et al. | 2020
- 37
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Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer ProductionManning, I. / Matsuda, Y. / Chung, G. / Sanchez, E. / Dudley, M. / Ailihumaer, T. / Raghothamacher, B. et al. | 2020
- 44
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Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC CrystalsAilihumaer, T. / Raghothamachar, B. / Dudley, M. / Chung, G. / Manning, I. / Sanchez, E. et al. | 2020
- 51
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Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiCEun, T. H. / Yeo, I. G. / Kim, J. Y. / Lee, S. S. / Seo, H. S. / Chun, M. C. / Hong, S. K. et al. | 2020
- 57
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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity AnalysisPiluso, N. / Rinaldi, S. / Lorenti, S. / Bassi, A. / Severino, A. / Coffa, S. et al. | 2020
- 63
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X-Ray Topography Characterization of Large Diameter AIN Single Crystal SubstratesDalmau, R. / Britt, J. / Fang, H. Y. / Raghothamachar, B. / Dudley, M. / Schlesser, R. et al. | 2020
- 71
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Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current ApplicationsItoh, H. / Enokizono, T. / Miyase, T. / Hori, T. / Wada, K. / Doi, H. / Furumai, M. et al. | 2020
- 78
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Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD ToolDaigo, Y. / Ishiguro, A. / Ishii, S. / Kobayashi, T. / Moriyama, Y. et al. | 2020
- 84
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Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD ToolDaigo, Y. / Ishiguro, A. / Ishii, S. / Kobayashi, T. / Moriyama, Y. et al. | 2020
- 91
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Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCI Gas with High CI/Si Ratio in CVD ProcessDaigo, Y. / Ishiguro, A. et al. | 2020
- 96
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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and AlFerro, G. / Chaussende, D. et al. | 2020
- 102
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Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) PseudosubstratesReiprich, J. / Isaac, N. A. / Schlag, L. / Hopfeld, M. / Pezoldt, J. / Jacobs, H. O. et al. | 2020
- 113
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Prospects of Bulk Growth of 3C-SiC Using Sublimation GrowthWellmann, P. J. / Schuh, P. / Kollmuss, M. / Schöler, M. / Steiner, J. / Zielinski, M. / Maucen, M. / Via, F. La et al. | 2020
- 120
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3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and StressVia, F. La / Mauceri, M. / Scuderi, V. / Calabretta, C. / Zimbone, M. / Anzalone, R. et al. | 2020
- 126
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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiCZeghbroeck, B. Van / Brow, R. / Borsa, T. / Bobela, D. et al. | 2020
- 132
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Exploration of Solid Phase Epitaxy of 3C-SiC on SiliconZielinski, M. / Monnoye, S. / Mank, H. / Torregrosa, F. / Grosset, G. / Spiegel, Y. / Portail, M. / Michon, A. et al. | 2020
- 139
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Mono-Versus Poly-Crystalline SiC for Nuclear ApplicationsHuang, X. / Yeghoyan, T. / Gavarini, S. / Souliere, V. / Millard-Pinard, N. / Ferro, G. et al. | 2020
- 145
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Microscopic Identification of Surface Steps on SiC by Density-Functional CalculationsSeino, K. / oshiyama, A. et al. | 2020
- 155
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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal TechnologyRusch, O. / Hellinger, C. / Moult, J. / Corcoran, Y. / Erlbacher, T. et al. | 2020
- 161
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Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their SizeNakanishi, Y. / Mukai, R. / Matsuyama, S. / Yamauchi, K. / Sano, Y. et al. | 2020
- 167
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Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide WaferKawasaki, R. / Irikura, K. / Habuka, H. / Takahashi, Y. / Kato, T. et al. | 2020
- 173
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Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and NitrogenIrikura, K. / Kawasaki, R. / Habuka, H. / Takahashi, Y. / Kato, T. et al. | 2020
- 180
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Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using ChloridesMizushima, I. / Habuka, H. et al. | 2020
- 186
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SiC Epitaxial Reactor Cleaning by CIF3 Gas with the Help of Reaction HeatKurashima, K. / Hayashi, M. / Habuka, H. / Ito, H. / Mitani, S. I. / Takahashi, Y. et al. | 2020
- 193
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Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed CrystalsTitov, A. / Walters, A. / Sasai, H. / Shindo, T. et al. | 2020
- 199
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A New Permanganate-Free Slurry for GaN-SiC CMP ApplicationsFang, T. / Chen, P. C. / Lee, M. H. et al. | 2020
- 206
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Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric ConditionMatsumae, T. / Kurashima, Y. / Umezawa, H. / Takagi, H. et al. | 2020
- 215
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Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction RegionMatsuura, H. / Nishihata, R. / Takeshita, A. / Ogawa, K. / Imamura, T. / Takano, K. / Okuda, K. / Hidaka, A. / Ji, S. Y. / Eto, K. et al. | 2020
- 224
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Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiCHidaka, A. / Takeshita, A. / Ogawa, K. / Imamura, T. / Takano, K. / Okuda, K. / Matsuura, H. / Ji, S. Y. / Eto, K. / Mitani, T. et al. | 2020
- 231
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Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and ElectronsKozlovski, V. V. / Korolkov, O. / Lebedev, A. A. / Toompuu, J. / Sleptsuk, N. et al. | 2020
- 237
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Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCYV)Savtchouk, A. / Wilson, M. / D'Amico, J. / Almeida, C. / Lagowski, J. et al. | 2020
- 243
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Wurtzite SiC Formation in Plastic Deformed 3C and 6HPezoldt, J. / Kalnin, A. A. et al. | 2020
- 249
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Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical SimulationSugiura, T. / Takahashi, N. / Nakano, N. et al. | 2020
- 256
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SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative AnalysisSankin, V. I. / Petrov, A. G. / Shkrebiy, P. P. / Kazarova, O. P. / Lebedev, A. A. et al. | 2020
- 265
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Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen ConcentrationsTanaka, D. / Lu, W. F. / Kamiyama, S. / Iwaya, M. / Takeuchi, T. / Akasaki, I. et al. | 2020
- 272
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Resistivity Measurement of P*-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic EllipsometryIshiji, K. / Kawado, S. / Hirai, Y. / Nagamachi, S. et al. | 2020
- 278
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Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiCZubov, L. V. Shakhov, A. A. Lebedev, N. V. Seredova, S. P. Lebedev, V. V. Kozlovski, A. V. / Nikitina, I. P. et al. | 2020
- 284
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Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis TechniqueKim, J. G. / Yoo, W. S. / Kim, D. S. / Lee, W. J. et al. | 2020
- 290
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Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)Sonneville, C. / Planson, D. / Phung, L. V. / Bevilacqua, P. / Asllani, B. et al. | 2020
- 299
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Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast MappingKocher, M. / Schlichting, H. / Kallinger, B. / Rommel, M. / Bauer, A. J. / Erlbacher, T. et al. | 2020
- 306
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A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double ResonanceWaskiewicz, R. J. / Manning, B. R. / McCrory, D. J. / Lenahan, P. M. et al. | 2020
- 314
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Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron MicroscopyOhira, K. / Isshiki, T. / Sako, H. / Hasegawa, M. / Kobayashi, K. / Onuki, K. et al. | 2020
- 321
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From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiCLeonard, R. / Conrad, M. / Brunt, E. Van / Giles, J. / Hutchins, E. / Balkas, E. et al. | 2020
- 331
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Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiCAlfieri, G. / Kranz, L. / Mihaila, A. et al. | 2020
- 337
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Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal TreatmentYamazaki, Y. Chiba. 7. / Sato, S. I. / Makino, T. / Yamada, N. / Satoh, T. / Hijikata, Y. / Ohshim, T. et al. | 2020
- 343
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Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn DiodesYamazaki, Y. / Chiba, Y. / Sato, S. I. / Makino, T. / Yamada, N. / Satoh, T. / Kojima, K. / Hijikata, Y. / Tsuchida, H. / Hoshino, N. et al. | 2020
- 349
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Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiCNarahara, T. / Sato, S. I. / Kojima, K. / Yamazaki, Y. / Hijikata, Y. / Ohshima, T. et al. | 2020
- 355
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Near Infrared Photoluminescence of NcVsi Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged ParticlesSato, S. I. / Narahara, T. / Onoda, S. / Yamazaki, Y. / Hijikata, Y. / Gibson, B. C. / Greentree, A. / Ohshima, T. et al. | 2020
- 361
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The Effect of y-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFETAbe, Y. / Umeda, T. / Okamoto, M. / Harada, S. / Yamazaki, Y. / Ohshima, T. et al. | 2020
- 369
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4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection SystemHasegawa, M. / Ohira, K. / Kaneoka, N. / Ogata, T. / Onuki, K. / Kobayashi, K. / Osanai, T. / Masumoto, K. / Senzaki, J. et al. | 2020
- 376
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Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC EpilayersNishio, J. / Okada, A. / Ota, C. / Kushibe, M. et al. | 2020
- 387
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Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial WaferYang, L. / Zhao, L. X. / Wu, H. W. / Liu, Y. / Ailihumaer, T. / Raghothamachar, B. / Dudley, M. et al. | 2020
- 393
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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate WafersAilihumaer, T. / Peng, H. / Raghothamachar, B. / Dudley, M. / Chung, G. / Manning, I. / Sanchez, E. et al. | 2020
- 401
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BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VESudoh, Y. / Kitabatake, M. / Kaneko, T. et al. | 2020
- 408
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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten EtchingAnzalone, R. / Severino, A. / Piluso, N. / Coffa, S. et al. | 2020
- 414
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TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution GrowthTakahashi, J. / Kawaguchi, K. / Kusunoki, K. / Ueyama, T. / Kamei, K. et al. | 2020
- 421
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Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi WafersSako, H. / Ohira, K. / Kobayashi, K. / Isshiki, T. et al. | 2020
- 427
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Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch DamageSugiyama, N. / Mitani, T. / Kamata, I. / Kato, T. / Tsuchida, H. / Okumura, H. et al. | 2020
- 433
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Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias StressFiorenza, P. / Alessandrino, M. / Carbone, B. / Martino, C. Di / Russo, A. / Saggio, M. / Venuto, C. / Zanetti, E. / Bongiorno, C. / Giannazzo, F. et al. | 2020
- 439
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Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Densitv Substrate or an Epitaxial Wafer with an HNDENishihara, Y. / Kamei, K. / Momose, K. / Osawa, H. et al. | 2020
- 445
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Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial GrowthAdachi, K. / Kosugi, R. / Ji, S. Y. / Kawada, Y. / Fujisawa, H. / Tomohisa, S. / Miura, N. / Yonezawa, Y. / Okumura, H. et al. | 2020
- 451
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Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge PhotoluminescenceNakanishi, Y. / Noguchi, T. / Nakamura, T. / Ikegami, M. / Kobayashi, K. / Konishi, K. / Ebihara, K. et al. | 2020
- 458
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Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device PerformanceDas, H. / Sunkari, S. / Justice, J. / Pham, H. / Park, G. / Seo, Y. H. et al. | 2020
- 464
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Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperafure ConditionsRugen, S. / Sundaresan, S. / Singh, R. / Kaminski, N. et al. | 2020
- 472
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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability TestSeverino, A. / Anzalone, R. / Piluso, N. / Vitanza, E. / Carbone, B. / Russo, A. / Coffa, S. et al. | 2020
- 479
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Evolution of SiOx Shell Layers on SiC-SiOx Core-Shell NanowiresBroggi, A. / Ringdalen, E. / Tangstad, M. et al. | 2020
- 490
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Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction DiodesRashid, M. H. / Koel, A. / Rang, T. et al. | 2020
- 497
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Defects Characterization of GaN Substrate with Hot Implant ProcessMaekawa, J. / Kawanowa, H. / Aoki, M. / Takahiro, K. / Isshiki, T. et al. | 2020
- 505
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Structural Characterization of a Ga2 O3 Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM AnalysisHashimoto, A. / Sako, H. / Sameshima, J. / Nakamura, M. / Kobayashi, T. / Motoyama, S. / Otsuka, Y. et al. | 2020
- 512
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AFM Observation of Etch-Pit Shapes on ß-Ga2 O3 (001) Surface Formed by Molten Alkali EtchingOgawa, K. / Ogawa, N. / Kosaka, R. / Isshiki, T. / Aiso, T. / Iyoki, M. / Yao, Y. Z. / Ishikawa, Y. et al. | 2020
- 519
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Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in DiamondShikata, S. / Akashi, N. et al. | 2020
- 525
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Graphene Quality Assessment Using an Entropy Approach of SEM ImagesHähnlein, B. / Lebedev, S. P. / Eliseyev, I. A. / Davydov, V. Y. / Lebedev, A. A. / Pezoldt, J. et al. | 2020
- 535
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Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiCLim, M. W. / Sledziewski, T. / Rommel, M. / Erlbacher, T. / Kim, H. K. / Kim, S. J. / Shin, H. K. / Bauer, A. J. et al. | 2020
- 541
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Surface Treatment of 4H-SiC MOSFET'S Prior to Al2 O3 DepositionIdris, M. I. / Horsfall, A. B. et al. | 2020
- 547
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Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer DepositionRenz, A. B. / Vavasour, O. ]. / Gammon, P. M. / Li, F. / Dai, T. / Esfahani, S. / Baker, G. W. C. / Grant, N. E. / Murphy, J. D. / Mawby, P. A. et al. | 2020
- 554
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Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFETLee, K. / Seo, Y. H. / Lee, T. / Park, K. S. / Domeij, M. / Allerstam, F. / Neyer, T. et al. | 2020
- 559
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4H-SiC Power VDMOSFET Manufacturing Utilizing POCI3 Post Oxidation AnnealingJu, Y. / Bouvet, D. / Stark, R. / Woerle, J. / Grossner, U. et al. | 2020
- 565
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Compatibility of POCI3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETsWatanabe, T. / Noguchi, M. / Tomohisa, S. / Miura, N. et al. | 2020
- 573
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Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETsAnders, M. A. / Lenahan, P. M. / Ryan, J. T. et al. | 2020
- 581
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Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC InterfaceWoerle, J. / Prokscha, T. / Grossner, U. et al. | 2020
- 587
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Profiling with Depth Resolution of Sub-nm for SiOz/ SIC Interface by Dual-Beam TOF-SIMS Combined with SimulationSameshima, J. / Takenaka, A. / Muraji, Y. / Nakata, Y. / Yoshikawa, M. et al. | 2020
- 595
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Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N2 Annealing with Conductance MeasurementsZhou, X. / Hitchcock, C. W. / Dahal, R. P. / Pandey, G. / Kupernik, J. / Bhat, I. B. / Chow, T. P. et al. | 2020
- 601
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Photo-Assisted Corona-Charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-VSavtchouk, A. / Wilson, M. / D'Amico, J. / Almeida, C. / Hoff, A. / Lagowski, J. et al. | 2020
- 608
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Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD SimulationsMatacena, I. / Maresca, L. / Riccio, M. / Irace, A. / Breglio, G. / Daliento, S. et al. | 2020
- 614
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Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETsZhou, X. / Hitchcock, C. W. / Tang, P. / Bhat, I. B. / Chow, T. P. et al. | 2020
- 620
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Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect MeasurementTakeda, H. / Sometani, M. / Hosoi, T. / Shimura, T. / Yano, H. / Watanabe, H. et al. | 2020
- 627
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Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device SimulationYamasue, K. / Yamagishi, Y. / Cho, Y. et al. | 2020
- 635
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A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement TechniquePande, P. / Dimitrijev, S. / Haasmann, D. / Moghadam, H. A. / Tanner, P. / Han, J. S. et al. | 2020
- 642
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Ultrafast Pulsed /-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETsEkström, M. / Malm, B. G. / Zetterling, C. et al. | 2020
- 652
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Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs GrasserBerens, J. / Pobegen, G. / Grasser, T. et al. | 2020
- 659
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Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si SubstratesLi, F. / Qiu, S. / Jennings, M. / Mawby, P. et al. | 2020
- 665
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TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching PperationMurakami, E. / Takeshita, T. / Oda, K. et al. | 2020
- 671
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Modeling of Threshold Voltage Hysteresis in SiC MOSFET DeviceCascino, S. / Saggio, M. / Guarnera, A. et al. | 2020
- 683
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3x 10/18 - 1 x 10/19 cm - 3 AI+ Ion Implanted 4H-SiC: Annealing Time EffectNipoti, R. / Parisini, A. / Boldrini, V. / Vantaggio, S. / Canino, M. / Sanmartin, M. / Alfieri, G. et al. | 2020
- 689
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Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiCLinnarsson, M. K. / Hallén, A. / Vines, L. et al. | 2020
- 698
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Ion Implanted Phosphorous for 4H-SiC VDMOSFETSs Source Regions: Effect of the Post Implantation Annealing TimeNipoti, R. / Parisini, A. / Boldrini, V. / Vantaggio, S. / Gorni, M. / Canino, M. / Pizzochero, G. / Camarda, M. / Woerle, J. / Grossner, U. et al. | 2020
- 705
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4H-SiC MOSFET Source and Body Laser Annealing ProcessCalabretta, C. / Agati, M. / Zimbone, M. / Boninelli, S. / Castiello, A. / Pecora, A. / Fortunato, G. / Calcagno, L. / Torrisi, L. / Via, F. La et al. | 2020
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The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal AnnealingZhou, Z. W. / Zhang, Z. Z. / He, W. W. / Hao, J. Y. / Sun, J. / Zhang, F. / Zheng, Z. D. et al. | 2020
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Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiCHellinger, C. / Rusch, O. / Rommel, M. / Bauer, A. J. / Erlbacher, T. et al. | 2020
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Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT TechnologyRoccaforte, F. / Spera, M. / Franco, S. Di / Nigro, R. Lo / Fiorenza, P. / Giannazzo, F. / Tucolano, F. / Greco, G. et al. | 2020
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Development of SiC Etching by Chlorine Fluoride GasTakahashi, Y. / Kato, K. / Habuka, H. et al. | 2020
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The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power DevicesOpondo, N. / Cooper, J. A. / Liao, H. J. / Chen, W. N. / Morisette, D. et al. | 2020
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The IMOSFET: A Deeply-Scaled Fully-Self-Aligned Trench MOSFETSampath, M. / Salemi, A. / Morisette, D. / Cooper, J. A. et al. | 2020
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Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETsMasuda, T. / Saito, Y. / Hatayama, T. / Michikoshi, H. / Mikamura, Y. / Harada, S. et al. | 2020
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Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al ImplantationFukui, Y. / Sugawara, K. / Tanaka, R. / Koketsu, H. / Hatta, H. / Miyata, Y. / Suzuki, H. / Taguchi, K. / Kagawa, Y. / Tomohisa, S. et al. | 2020
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Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion ImplantationTanaka, R. / Sugawara, K. / Fukui, Y. / Hatta, H. / Koketsu, H. / Suzuki, H. / Miyata, Y. / Taguchi, K. / Kagawa, Y. / Tomohisa, S. et al. | 2020
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1200 V / 200 A Groove Trench MOSFET Optimized for Low Power Loss and High ReliabilityUchida, K. / Hiyoshi, T. / Saito, Y. / Egusa, H. / Kaneda, T. / Oomori, H. / Tsuno, T. et al. | 2020
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Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal TopologiesHan, K. J. / Kanale, A. / Baliga, B. J. / Bhattacharya, S. et al. | 2020
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Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETsAgarwal, A. / Kanale, A. / Han, K. J. / Baliga, B. J. / Bhattacharya, S. et al. | 2020
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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOSOkada, M. / Kumazawa, T. / Kobayashi, Y. / Baba, M. / Harada, S. et al. | 2020
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Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBDTominaga, T. / Hino, S. / Mitsui, Y. / Nakashima, J. / Kawahara, K. / Tomohisa, S. / Miura, N. et al. | 2020
- 808
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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFETDai, T. X. / Renz, A. B. / Zhang, L. / Vavasour, O. J. / Baker, G. W. C. / Shah, V. A. / Mawby, P. A. / Gammon, P. M. et al. | 2020
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Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETsBianda, E. / Mihaila, A. / Romano, G. / Knoll, L. / Wirths, S. / Torresin, D. et al. | 2020
- 822
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Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETsGendron-Hansen, A. / Hong, C. / Jiang, Y. F. / May, J. / Sdrulla, D. / Odekirk, B. / Kashyap, A. S. et al. | 2020
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Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single ProcessYun, N. / Lynch, J. / Sung, W. J. et al. | 2020
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Avalanche Ruggedness Assessment of 1.2kV 45m Asymmetric Trench SiC MOSFETsDeng, X. C. / Zhu, H. / Li, X. / Xu, X . J. / Zhou, K. / Li, Z. Q. / Bai, S. / Zhang, Y. R. / Zhang, B. et al. | 2020
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Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS TransistorsSchlichting, H. / Kocher, M. / Weisse, J. / Erlbacher, T. / Bauer, A. J. et al. | 2020
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SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation StudySledziewski, T. / Erlbacher, T. et al. | 2020
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Improved SiC MOSFET SPICE Model to Avoid Convergence ErrorsHove, H. Lefdal / Spro, O. C. / Guidi, G. / Peftitsis, D. et al. | 2020
- 865
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Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETsBellini, M. / Knoll, L. et al. | 2020
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1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage DropKanale, A. / Cheng, T. H. / Han, K. J. / Baliga, B. J. / Bhattacharya, S. / Hopkins, D. et al. | 2020
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Common-Drain Bidirectional 1200V SiC MOSFETsHitchcock, C. W. / Chow, T. P. et al. | 2020
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Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETsMcPherson, J. / Hitchcock, C. W. / Chow, T. P. / Ji, W. / Woodworth, A. et al. | 2020
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20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTsKoyama, A. / Kiuchi, Y. / Mizushima, T. / Takenaka, K. / Matsunaga, S. / Sometani, M. / Nakayama, K. / Ishimori, H. / Kimoto, A. / Takei, M. et al. | 2020
- 905
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Experimental Demonstration of Ruggedness in 13 kV SiC-IGBTKonishi, K. / Hamada, K. / Okabe, H. / Miyata, Y. / Niwa, H. / Ebihara, K. / Kawahara, K. / Kawabata, N. / Tomohisa, S. / Miura, N. et al. | 2020
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Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD ModelJohannesson, D. / Jacobs, K. / Norrga, S. / Hallén, A. / Nawaz, M. / Nee, H. P. et al. | 2020
- 917
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Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-WellTiwari, A. K. / Antoniou, M. / Trajkovic, T. / Dai, T. / Gammon, P. M. / Udrea, F. et al. | 2020
- 923
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Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and DarlingtonsAsllani, B. / Bevilacqua, P. / Morel, H. / Planson, D. / Phung, L. V. / Choucoutou, B. / Lagier, T. / Mermet-Guyennet, M. et al. | 2020
- 933
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Short Circuit Ruggedness of 600 V SiC Trench JFETsSundaramoorthy, V. / Kranz, L. / Wirths, S. / Bellini, M. / Romano, G. / Arango, Y. / Bianda, E. / Knoll, L. / Mihaila, A. et al. | 2020
- 939
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Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) DiodesZhou, X. / Hitchcock, C. W. / Ghandi, R. / Bolotnikov, A. / Chow, T. P. et al. | 2020
- 945
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A Subcircuit SPICE Model for SiC Charge-Balance Schottky DiodesHitchcock, C. W. / Zhou, X. / Pandey, G. / Ghandi, R. / Bolotnikov, A. / Chow, T. P. et al. | 2020
- 953
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Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-DiodesLechner, B. / Huang, Y. / Schaub, S. / Wachutka, G. et al. | 2020
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Analysis of Barrier Inhomogeneities of P-Type AI/4H-SiC Schottky Barrier DiodesZiko, M. H. / Koel, A. / Rang, T. / Toompuu, J. et al. | 2020
- 977
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Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power DevicesHoffmann, F. / Kaminski, N. et al. | 2020
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Stress Test of Cascode Switch Using SiC Static Induction TransistorMatsumoto, T. / Tanaka, Y. / Yano, K. et al. | 2020
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Accelerated Testing of SiC Power Devices under High-Field Operating ConditionsLichtenwalner, D. J. / Sabri, S. / Brunt, E. Van / Hull, B. / Ryu, S. H. / Steinmann, P. / Romero, A. / Park, J. H. / Ganguly, S. / Gajewski, D. A. et al. | 2020
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Investigations on the Resistance Reduction Effect of Double-Trench SiC MOSFETs under Repetitive Avalanche StressWei, J. X. / Liu, S. Y. / Li, S. / Tang, L. Z. / Lou, R. C. / Fu, H. / Zhao, H. B. / Sun, W. F. / Zhang, X. B. / Bai, S. et al. | 2020
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High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky DiodesTang, Y. D. / Liu, X. Y. / Li, C. Z. / Bai, Y. / Chen, H. / Yang, C. Y. et al. | 2020
- 1010
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Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit BreakerSagara, M. / Wada, K. / Nishizawa, S. et al. | 2020
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High-Performance SIP Half-Bridge IPM Based on 35mQ/1200V SiC Stack-CascodeAlexandrov, P. / Bhalla, A. / Li, X. Q. / Eltze, J. et al. | 2020
- 1022
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Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module PackagingFan, W. / Wexler, G. / Gurpinar, E. / Ozpineci, B. et al. | 2020
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Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V CharacteristicsGreen, R. / Lelis, A. J. / Nouketcha, F. L. et al. | 2020
- 1033
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High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETsMengotti, E. / Bianda, E. / Wirths, S. / Baumann, D. / Bettega, J. / Jormanainen, J. et al. | 2020
- 1045
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The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM InverterLee, H. / Liua, C. K. / Chang, T. C. et al. | 2020
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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)Neudeck, P. G. / Spry, D. J. et al. | 2020
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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETsWitulski, A. F. / Ball, D. R. / Johnson, R. A. / Galloway, K. F. / Sternberg, A. L. / Alles, M. L. / Reed, R. A. / Schrimpf, R. D. / Hutson, J. M. / Javanainen, A. et al. | 2020
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Impact of Proton Irradiation on Power 4H-SiC MOSFETsLebedev, A. A. / Kozlovski, V. V. / Fursin, L. / Strel'chuk, A. M. / Levinshtein, M. E. / Ivanov, P. A. / Zubov, A. V. et al. | 2020
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Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky BarrierStrel'chuk, A. M. / Kozlovski, V. V. / Lebedev, A. A. et al. | 2020
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Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced FailureHuang, Y. / Lechner, B. / Wachutka, G. et al. | 2020
- 1097
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Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETsAlexandrov, P. / O'Grady, M. et al. | 2020
- 1104
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Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV DetectorsKalinina, E. V. / Lebedev, A. A. / Kozlovski, V. V. / Zabrodski, V. / Nikolaev, A. / Shvarts, M. Z. / Levina, S. et al. | 2020
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Radiation Hardness of 4H-SiC JFETs in MGy Dose RangesTakeyama, A. / Shimizu, K. / Makino, T. / Yamazaki, Y. / Kuroki, S. I. / Tanaka, Y. / Oshima, T. et al. | 2020
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High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFETSato, S. / Kato, F. / Hozoji, H. / Sato, H. / Yamaguchi, H. / Harada, S. et al. | 2020
- 1123
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Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature ApplicationsAlbrecht, M. / Pérez, D. / Martens, R. C. / Bauer, A. J. / Erlbacher, T. et al. | 2020
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Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power SupplyKoseki, K. / Yamamoto, M. / Tanaka, Y. et al. | 2020
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Inrush Current Effects on SIC-MOSFETS for LLC ConverterTakaku, Y. / Tanaka, H. / Takada, Y. / Nakata, S. et al. | 2020
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Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETsOkamura, K. / Naito, F. / Takayama, K. / Kitai, H. / Michikoshi, H. / Sakamoto, K. / Tokuchi, A. / Kaito, T. / Kumamoto, D. et al. | 2020
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Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated CircuitsSpry, D. J. / Neudeck, P. G. / Chang, C. W. et al. | 2020