Microstructure of erbium‐implanted Si (English)
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- New search for: Eaglesham, D. J.
- New search for: Michel, J.
- New search for: Fitzgerald, E. A.
- New search for: Jacobson, D. C.
- New search for: Poate, J. M.
- New search for: Benton, J. L.
- New search for: Polman, A.
- New search for: Xie, Y.‐H.
- New search for: Kimerling, L. C.
- New search for: Eaglesham, D. J.
- New search for: Michel, J.
- New search for: Fitzgerald, E. A.
- New search for: Jacobson, D. C.
- New search for: Poate, J. M.
- New search for: Benton, J. L.
- New search for: Polman, A.
- New search for: Xie, Y.‐H.
- New search for: Kimerling, L. C.
In:
Applied Physics Letters
;
58
, 24
;
2797-2799
;
1991
- Article (Journal) / Electronic Resource
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Title:Microstructure of erbium‐implanted Si
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Contributors:Eaglesham, D. J. ( author ) / Michel, J. ( author ) / Fitzgerald, E. A. ( author ) / Jacobson, D. C. ( author ) / Poate, J. M. ( author ) / Benton, J. L. ( author ) / Polman, A. ( author ) / Xie, Y.‐H. ( author ) / Kimerling, L. C. ( author )
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Published in:Applied Physics Letters ; 58, 24 ; 2797-2799
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Publisher:
- New search for: American Institute of Physics
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Publication date:1991-06-17
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 58, Issue 24
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2727
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Compression of nonamplified femtosecond pulses using nonlinear organic fibersYamashita, Mikio / Torizuka, Kenji / Uemiya, Takafumi / Shimada, Junichi et al. | 1991
- 2729
-
Passive transverse‐mode organization in a photorefractive oscillator with saturable absorberFischer, Baruch / Werner, Ofer / Horowitz, Moshe / Lewis, Aaron et al. | 1991
- 2732
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Second‐harmonic generation of blue light in a LiTaO3 waveguideMizuuchi, Kiminori / Yamamoto, Kazuhisa / Taniuchi, Tetsuo et al. | 1991
- 2735
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Controllable enhancement of excitonic spontaneous emission by quantum confined Stark effect in GaAs quantum wells embedded in quantum microcavitiesOchi, N. / Shiotani, T. / Yamanishi, M. / Honda, Y. / Suemune, I. et al. | 1991
- 2738
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Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained‐layer multiquantum well lasersTiemeijer, L. F. / Thijs, P. J. A. / de Waard, P. J. / Binsma, J. J. M. / Dongen, T. v. et al. | 1991
- 2741
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Dielectric and optical properties of substrates for high‐temperature superconductor filmsReagor, David / Garzon, Fernando et al. | 1991
- 2744
-
GexSi1−x optical directional couplerMayer, Robert A. / Jung, K. H. / Hsieh, T. Y. / Kwong, Dim‐Lee / Campbell, Joe C. et al. | 1991
- 2746
-
Polarization‐switchable microchip lasersZayhowski, J. J. et al. | 1991
- 2749
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Efficient vertical coupling of photodiodes to InGaAsP rib waveguidesDeri, R. J. / Doldissen, W. / Hawkins, R. J. / Bhat, R. / Soole, J. B. D. / Schiavone, L. M. / Seto, M. / Andreadakis, N. / Silberberg, Y. / Koza, M. A. et al. | 1991
- 2752
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Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)Eng, L. E. / Sa’ar, A. / Chen, T. R. / Grave´, I. / Kuze, N. / Yariv, A. et al. | 1991
- 2755
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Structural properties of CdTe‐ZnTe strained‐layer superlattice grown on GaAs by hot‐wall epitaxySugiyama, I. / Hobbs, A. / Ueda, O. / Shinohara, K. / Takigawa, H. et al. | 1991
- 2758
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Hydrogen loss from laser‐annealed amorphous hydrogenated carbon films studied by secondary‐ion mass spectrometryArmeyev, V. Yu. / Loubnin, E. N. / Ralchenko, V. G. / Strelnitsky, V. E. et al. | 1991
- 2761
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Sub‐100 nm lines produced by direct laser ablation in polyimidePhillips, H. M. / Callahan, D. L. / Sauerbrey, R. / Szabo´, G. / Bor, Z. et al. | 1991
- 2764
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Mechanically alloyed nanocrystalline Ni‐Mo powders: A new technique for producing active electrodes for catalysisTrudeau, M. L. / Huot, J. Y. / Schulz, R. et al. | 1991
- 2767
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Optimization of barrier thickness for efficient carrier capture in graded‐index and separate‐confinement multiple quantum well lasersBlom, P. W. M. / Haverkort, J. E. M. / Wolter, J. H. et al. | 1991
- 2770
-
Carbon doping in AlGaAs for AlGaAs/GaAs graded‐base heterojunction bipolar transistor by flow‐rate modulation epitaxyIto, Hiroshi / Makimoto, Toshiki et al. | 1991
- 2773
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Thermally stable low resistance ohmic contacts to n‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contactsHugon, M. C. / Agius, B. / Varniere, F. / Dubon‐Chevallier, C. / Bresse, J. F. / Froment, M. et al. | 1991
- 2776
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Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam systemTakahashi, Jun‐ichi / Utsumi, Yuichi / Akazawa, Housei / Kawashima, Izumi / Urisu, Tsuneo et al. | 1991
- 2779
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Epi‐less bond‐and‐etch‐back silicon‐on‐insulator by MeV ion implantationMaszara, W. P. / Pronko, P. P. / McCormick, A. W. et al. | 1991
- 2782
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Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistorsScofield, John H. / Trawick, M. / Klimecky, P. / Fleetwood, D. M. et al. | 1991
- 2785
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Role of amphoteric defects in the formation of metal/GaAs Schottky barriersZhang, T. / Sigmon, T. W. et al. | 1991
- 2788
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Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfacesQiu, J. / Menke, D. R. / Kobayashi, M. / Gunshor, R. L. / Li, D. / Nakamura, Y. / Otsuka, N. et al. | 1991
- 2791
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Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systemsBhattacharya, P. K. / Zebda, Y. / Singh, J. et al. | 1991
- 2794
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Reflection high‐energy electron diffraction observation of GaAs surface‐prepared ultrasonic running de‐ionized water treatmentHirota, Y. / Homma, Y. / Sugii, K. et al. | 1991
- 2797
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Microstructure of erbium‐implanted SiEaglesham, D. J. / Michel, J. / Fitzgerald, E. A. / Jacobson, D. C. / Poate, J. M. / Benton, J. L. / Polman, A. / Xie, Y.‐H. / Kimerling, L. C. et al. | 1991
- 2800
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Hole‐dependent diffusion of implanted Mg in GaAsRobinson, Heyward G. / Deal, Michael D. / Stevenson, David A. et al. | 1991
- 2803
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Simulation of intervalley mixing in double‐barrier diodes using the lattice Wigner functionMiller, Douglas R. / Neikirk, Dean P. et al. | 1991
- 2806
-
p‐i‐n HgCdTe photodiodes grown by molecular beam epitaxyArias, J. M. / Zandian, M. / Zucca, R. / DeWames, R. E. et al. | 1991
- 2809
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Schottky‐limit barrier heights for CO‐coated metal clusters on GaAs(110)Komeda, T. / Stepniak, F. / Weaver, J. H. et al. | 1991
- 2812
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Monolithic, photoconductive impulse generator using a GaAs waferKim, A. / Zeto, R. / Youmans, R. / Conrad, J. / Kondek, C. / Weiner, M. / Brisker, H. / Agee, J. / Jasper, L. / Lalevic, B. et al. | 1991
- 2815
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Silicon epitaxial growth on Si‐TaSi2 eutectic composite substratesLevinson, M. / Tabasky, M. / Sung, C. / Hamill, G. / Matthiesen, D. H. / Ostreicher, K. / Ditchek, B. M. et al. | 1991
- 2818
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Si doping efficiency in GaAs grown at low temperaturesWiner, K. / Kawashima, M. / Horikoshi, Y. et al. | 1991
- 2821
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Electron transport of inhomogeneous Schottky barriersTung, R. T. et al. | 1991
- 2824
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Photoreflectance of semi‐insulating InP: Resistivity effects on the exciton phaseBerry, Alok K. / Gaskill, D. K. / Stauf, G. T. / Bottka, N. et al. | 1991
- 2827
-
Avoiding preamorphization damage in MeV heavy ion‐implanted siliconSchreutelkamp, R. J. / Custer, J. S. / Liefting, J. R. / Saris, F. W. et al. | 1991
- 2830
-
Anisotropy of critical current density in textured Bi2Sr2Ca1Cu2Ox tapesKumakura, H. / Togano, K. / Maeda, H. / Kase, J. / Morimoto, T. et al. | 1991
- 2833
-
Dependence of the magnetization in YBa2Cu3O7−x thin films on the applied magnetic field directionTeshima, H. / Oishi, A. / Izumi, H. / Ohata, K. / Morishita, T. / Tanaka, S. et al. | 1991
- 2836
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Processing of a TlBa2Ca2Cu3Oy superconducting film by liquid‐gas solidificationChou, H. / Chen, H. S. / Kortan, A. R. / Kimerling, L. C. / Thiel, F. A. / Wu, M. K. et al. | 1991
- 2839
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Compositional effects on plasma‐enhanced metalorganic chemical vapor deposition of YBa2Cu3O7−x thin filmsZhao, J. / Chern, C. S. / Li, Y. Q. / Norris, P. / Gallois, B. / Kear, B. / Wu, X. D. / Muenchausen, R. E. et al. | 1991
- 2842
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Magneto‐optical recording by short pulsesOhtsuki, T. / Owa, S. / Yamada, F. et al. | 1991
- 2845
-
Universal elastic scattering cross sections for electrons in the range 1–100 keVBrowning, R. et al. | 1991
- 2848
-
Electronic structure of Sb in perovskite superconducting compoundsEibschu¨tz, M. / Reiff, W. M. / Cava, R. J. / Krajewski, J. J. / Peck, W. F. et al. | 1991
- 2851
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Role of bubbles in laser‐assisted wet etchingHussey, B. W. / Haba, B. / Gupta, A. et al. | 1991
- 2854
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Noninductive detection of single‐proton magnetic resonanceSidles, J. A. et al. | 1991