Local poling of ferroelectric polymers by scanning force microscopy (English)
National licence
- New search for: Gu¨thner, P.
- New search for: Dransfeld, K.
- New search for: Gu¨thner, P.
- New search for: Dransfeld, K.
In:
Applied Physics Letters
;
61
, 9
;
1137-1139
;
1992
- Article (Journal) / Electronic Resource
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Title:Local poling of ferroelectric polymers by scanning force microscopy
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Contributors:Gu¨thner, P. ( author ) / Dransfeld, K. ( author )
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Published in:Applied Physics Letters ; 61, 9 ; 1137-1139
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Publisher:
- New search for: American Institute of Physics
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Publication date:1992-08-31
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 61, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1013
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Improving the performance of semiconductor ring lasers by controlled reflection feedbackHohimer, J. P. / Vawter, G. A. / Craft, D. C. / Hadley, G. R. et al. | 1992
- 1016
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Theoretical analysis of dynamic response of asymmetric dual quantum well lasersIkeda, Sotomitsu / Shimizu, Akira et al. | 1992
- 1019
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Observation of the focusing of x‐ray transition radiation using cylindrical opticsPiestrup, M. A. / Boyers, D. G. / Pincus, C. I. / Li, Qiang / Ho, A. H. / Maruyama, X. K. / Snyder, D. D. / Skopik, D. M. / Silzer, R. M. / Moran, M. J. et al. | 1992
- 1022
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New principle for optical filtersMagnusson, R. / Wang, S. S. et al. | 1992
- 1025
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Sidelobe suppression in an acousto‐optic filter with a raised‐cosine interaction strengthSmith, D. A. / Johnson, J. J. et al. | 1992
- 1028
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C60 photoluminescence spectra related to gas adsorptionZhao, Tienan / Liu, Jinqing / Li, Yuliang / Zhu, Daoben et al. | 1992
- 1031
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Nitrogen and oxygen incorporation during rapid thermal processing of Si in N2OKuiper, A. E. T. / Pomp, H. G. / Asveld, P. M. / Bik, W. Arnold / Habraken, F. H. P. M. et al. | 1992
- 1034
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Structure of GaAs=GaSb incoherent interface after epitaxial growthBourret, A. / Fuoss, P. H. et al. | 1992
- 1037
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Nitrogen‐induced amorphization of Ti‐Zr powders during mechanical alloyingAoki, K. / Memezawa, A. / Masumoto, T. et al. | 1992
- 1040
-
Ballistic electron emission microscopy of laterally patterned microstructuresDavies, A. / Couillard, J. G. / Craighead, H. G. et al. | 1992
- 1043
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Growth of face‐centered‐cubic single crystals of C60 from boiling benzeneYosida, Yositaka / Arai, Takeshi / Suematsu, Hiroyoshi et al. | 1992
- 1045
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Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layerHuang, K. H. / Yu, J. G. / Kuo, C. P. / Fletcher, R. M. / Osentowski, T. D. / Stinson, L. J. / Craford, M. G. / Liao, A. S. H. et al. | 1992
- 1048
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High transconductance in‐plane‐gated transistorsWieck, A. D. / Ploog, K. et al. | 1992
- 1051
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pnp resonant tunneling light emitting transistorGenoe, J. / Van Hoof, C. / Fobelets, K. / Mertens, R. / Borghs, G. et al. | 1992
- 1054
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Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxyAsahi, H. / Hisaka, T. / Kim, S. G. / Kaneko, T. / Yu, S. J. / Okuno, Y. / Gonda, S. et al. | 1992
- 1057
-
Schottky barrier inhomogeneity caused by grain boundaries in epitaxial Al film formed on Si(111)Miura, Y. / Hirose, K. / Aizawa, K. / Ikarashi, N. / Okabayashi, H. et al. | 1992
- 1060
-
In situ infrared and mass spectroscopic study of the reaction of WF6 with hydrogenated amorphous siliconWadayama, Toshimasa / Shibata, Hironobu / Ohtani, Tsutomu / Hatta, Aritada et al. | 1992
- 1063
-
Visible photoluminescence of Zn‐doped CuAlS2Aksenov, Igor / Sato, Katsuaki et al. | 1992
- 1066
-
Laser‐driven boron diffusion into a Si epitaxial layer from a p+ boron‐doped Si substrateKim, K. M. / Mei, S. N. / Saccamango, M. J. / Chu, S. F. / von Gutfeld, R. J. / Vigliotti, D. R. et al. | 1992
- 1069
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Evidence for quantum well asymmetry in optical absorptionYoung, P. M. / Ehrenreich, H. et al. | 1992
- 1072
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Enhanced carrier densities and device performance in piezoelectric pseudomorphic high‐electron mobility transistor structuresSa´nchez‐Dehesa, J. / Sa´nchez‐Rojas, J. L. / Lopez, C. / Nicholas, R. J. et al. | 1992
- 1075
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Organometallic vapor phase epitaxy of CoGa on (100)GaAsMaury, F. / Talin, A. A. / Kaesz, H. D. / Williams, R. S. et al. | 1992
- 1078
-
Dependence of lifetime on surface concentration of copper and iron in silicon wafersZhong, L. / Shimura, F. et al. | 1992
- 1081
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Intersubband transitions in quantum well heterostructures with delta‐doped barriersPandey, Lakshmi N. / George, Thomas F. et al. | 1992
- 1084
-
Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiencyHoenk, Michael E. / Grunthaner, Paula J. / Grunthaner, Frank J. / Terhune, R. W. / Fattahi, Masoud / Tseng, Hsin‐Fu et al. | 1992
- 1087
-
Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−xGex alloysHiggs, V. / Lightowlers, E. C. / Tajbakhsh, S. / Wright, P. J. et al. | 1992
- 1090
-
Inhibition of etching in oxygen‐implanted AlGaAsReynolds, C. L. / Lengle, S. E. / Ahrens, R. E. / Parker, S. M. et al. | 1992
- 1092
-
Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaPAbernathy, C. R. / Ren, F. / Wisk, P. W. / Pearton, S. J. / Esagui, R. et al. | 1992
- 1095
-
Low residual impurities assessment by photoluminescence in multistep wafer‐annealed semi‐insulating Czochralski‐grown GaAsKa, O. / Oda, O. / Makita, Y. / Yamada, A. et al. | 1992
- 1098
-
Spectroscopic ellipsometric measurements of the dielectric function of germanium dioxide films on crystal germaniumHu, Y. Z. / Zettler, J.‐Th. / Chongsawangvirod, S. / Wang, Y. Q. / Irene, E. A. et al. | 1992
- 1101
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Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport depositionKim, T. W. / Jung, M. / Park, H. L. / Na, H. K. / Kim, J. S. et al. | 1992
- 1104
-
Scanning tunneling microscopy of GaAs multiple pn junctionsGwo, S. / Smith, A. R. / Shih, C. K. / Sadra, K. / Streetman, B. G. et al. | 1992
- 1107
-
Observation of interface traps in the silicon conduction band at the (100)Si/SiO2 interface at 4.2 KAnderson, W. R. / Wheeler, R. G. / Ma, T. P. et al. | 1992
- 1110
-
Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGexStern, Frank / Laux, Steven E. et al. | 1992
- 1113
-
Continuous coherent microwave oscillation in InSb p‐n junctionsKamakura, Katsutoshi et al. | 1992
- 1116
-
Composition dependent transport properties of strain relaxed InxGa1−xAs(x<0.45) epilayersChen, Jianhui / Fernandez, J. M. / Wieder, H. H. et al. | 1992
- 1119
-
Silver on diamond Schottky diodes formed on boron doped hot‐filament chemical vapor deposited polycrystalline diamond filmsZhao, G. / Stacy, T. / Charlson, E. J. / Charlson, E. M. / Chao, C. H. / Hajsaid, M. / Meese, J. / Popovici, G. / Prelas, M. et al. | 1992
- 1122
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Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 KPeople, R. / Bean, J. C. / Bethea, C. G. / Sputz, S. K. / Peticolas, L. J. et al. | 1992
- 1125
-
Role of hydrogen in the growth of Y1Ba2Cu3O7 on MgO substrates by off‐axis magnetron sputteringCukauskas, Edward J. / Allen, Laura H. / Sherrill, Gregory K. / Holm, R. T. et al. | 1992
- 1128
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Characteristics of high performance YBa2Cu3O7 step‐edge junctionsLuine, J. / Bulman, J. / Burch, J. / Daly, K. / Lee, A. / Pettiette‐Hall, C. / Schwarzbek, S. / Miller, D. et al. | 1992
- 1131
-
Fabrication of thin film Nb‐(fine Nb wires)‐NbN weak links for superconducting quantum interference device applicationsAbe, H. / Hamasaki, K. / Ikeno, Y. et al. | 1992
- 1134
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a‐axis oriented growth of YBa2Cu3O7−y films on LaSrGaO4(100) substratesHontsu, S. / Mukai, N. / Ishii, J. / Kawai, T. / Kawai, S. et al. | 1992
- 1137
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Local poling of ferroelectric polymers by scanning force microscopyGu¨thner, P. / Dransfeld, K. et al. | 1992