Fabrication and transport characteristics of semiconductor wire and ring structures (English)
- New search for: Ishibashi, K.
- New search for: Takagaki, Y.
- New search for: Gamo, K.
- New search for: Namba, S.
- New search for: Takaoka, S.
- New search for: Murase, K.
- New search for: Ishida, S.
- New search for: Aoyagi, Y.
- New search for: Ishibashi, K.
- New search for: Takagaki, Y.
- New search for: Gamo, K.
- New search for: Namba, S.
- New search for: Takaoka, S.
- New search for: Murase, K.
- New search for: Ishida, S.
- New search for: Aoyagi, Y.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
6
, 6
;
1852-1855
;
1988
- Article (Journal) / Electronic Resource
-
Title:Fabrication and transport characteristics of semiconductor wire and ring structures
-
Additional title:Semiconductor wire and ring structures
-
Contributors:Ishibashi, K. ( author ) / Takagaki, Y. ( author ) / Gamo, K. ( author ) / Namba, S. ( author ) / Takaoka, S. ( author ) / Murase, K. ( author ) / Ishida, S. ( author ) / Aoyagi, Y. ( author )
-
Published in:
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1988-11-01
-
Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 6, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1621
-
Reactive ion beam etching of polyimide thin filmsVanderlinde, William E. / Ruoff, Arthur L. et al. | 1988
- 1626
-
High‐rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma systemYu, Jin‐Zhong / Hara, Tamio / Hamagaki, Manabu / Yoshinaga, Takashi / Aoyagi, Yoshinobu / Namba, Susumu et al. | 1988
- 1632
-
Reaction probability for the spontaneous etching of silicon by CF3 free radicalsRobertson, Robert M. / Golden, David M. / Rossi, Michel J. et al. | 1988
- 1641
-
Selective dry etching of GaAs over AlGaAs in SF6/SiCl4 mixturesSalimian, S. / Cooper, C. B. et al. | 1988
- 1645
-
The role of aluminum in selective reactive ion etching of GaAs on AlGaAsSeaward, K. L. / Moll, N. J. / Stickle, W. F. et al. | 1988
- 1650
-
Photoemission investigation of Ge and SiGe alloy surfaces after reactive ion etchingRobey, S. W. / Bright, A. A. / Oehrlein, G. S. / Iyer, S. S. / Delage, S. L. et al. | 1988
- 1657
-
High‐throughput and fully automated system for molecular‐beam epitaxySakai, Junro / Murakami, Shun‐ichi / Hirama, Kimiaki / Ishida, Tetsuo / Oda, Zenjiro et al. | 1988
- 1662
-
Barrier height modification of metal/germanium Schottky diodesHan, C. C. / Marshall, E. D. / Fang, F. / Wang, L. C. / Lau, S. S. / Voreades, D. et al. | 1988
- 1667
-
Baffle‐free refractory dimer arsenic source for molecular‐beam epitaxyMattord, T. J. / Kesan, V. P. / Crook, G. E. / Block, T. R. / Campbell, A. C. / Neikirk, D. P. / Streetman, B. G. et al. | 1988
- 1671
-
Correct substrate temperature monitoring with infrared optical pyrometer for molecular‐beam epitaxy of III–V semiconductorsMizutani, T. et al. | 1988
- 1678
-
Characterization and optimization of low‐pressure chemical vapor deposited tungsten silicide using screening and response surface experimental designsClark, Thomas E. et al. | 1988
- 1688
-
Surface science studies of semiconductor growth processesBuhaenko, D. S. / Francis, S. M. / Goulding, P. A. / Pemble, M. E. et al. | 1988
- 1694
-
Projection patterned Si doping of GaAs in ambient SiH4 gas by a KrF excimer laserSugioka, Koji / Toyoda, Koichi et al. | 1988
- 1698
-
Absorption properties of the bottom novolac layer in multilayer resist systemsNamatsu, Hideo et al. | 1988
- 1707
-
Properties of WSix using dichlorosilane in a single‐wafer systemWu, T. H. Tom / Rosler, Richard S. / Lamartine, Bruce C. / Gregory, Richard B. / Tompkins, Harland G. et al. | 1988
- 1714
-
Study on oxygen behavior during Ti/Si and Ti/SiO2 interactionsLi, Bing‐Zong / Zhou, Shi‐Fang / Hong, Feng / Jiang, Guo‐Bao / Liu, Ping / Zhang, Ai‐Ming / Chao, Ming et al. | 1988
- 1721
-
Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer systemRosler, Richard S. / Mendonca, John / Rice, M. John et al. | 1988
- 1728
-
Formation and properties of rapid thermally annealed TiSi2 on lightly doped and heavily implanted siliconShenai, K. / Piacente, P. A. / Lewis, N. / Smith, G. A. / McConnell, M. D. / Baliga, B. J. et al. | 1988
- 1734
-
TiSi2 strap formation by Ti–amorphous‐Si reactionvan Houtum, H. J. W. / Bos, A. A. / Jonkers, A. G. M. / Raaijmakers, I. J. M. M. et al. | 1988
- 1740
-
Selectively silicided vertical power double‐diffused metal–oxide semiconductor field effect transistors for high‐frequency power switching applicationsShenai, K. / Piacente, P. A. / Korman, C. S. / Baliga, B. J. et al. | 1988
- 1746
-
The morphologies and characteristics of reactively formed TaSi2 filmsJiang, Tao / Guobin, Zhang / Guoying, Wu / Anyan, Du et al. | 1988
- 1749
-
A new x‐ray diffractometer design for thin‐film texture, strain, and phase characterizationFlinn, P. A. / Waychunas, G. A. et al. | 1988
- 1756
-
An investigation of hydrogen concentration profiles in as‐deposited and annealed chemical vapor deposited SiO2 filmsXie, Joseph Z. / Murarka, Shyam P. / Guo, Xin S. / Lanford, William A. et al. | 1988
- 1763
-
Thermal stability of polyimidesiloxane (SIM‐2000)Sun, S. P. / Murarka, S. P. / Lee, C. J. et al. | 1988
- 1768
-
Self‐limiting advancing gates for GaAs metal–semiconductor field effect transistorsFernandes, M. G. / Han, C. C. / Xia, W. / Lau, S. S. / Kwok, S. P. et al. | 1988
- 1773
-
Temperature dependence of GaAs metal–semiconductor field effect transistor threshold voltageLiang, C. L. / Wong, H. / Mutikainen, R. H. / Fourkas, R. M. / Cheung, N. W. / Sokolich, M. / Kwok, S. P. / Cheung, S. K. et al. | 1988
- 1779
-
The effects of annealing encapsulant and ambient on the barrier height of WNx/GaAs contact and self‐aligned gate field effect transistor fabricationCheung, S. K. / Kwok, S. P. / Kaleta, A. / Yu, K. M. / Jaklevic, J. M. / Liang, C. L. / Cheung, N. W. / Haller, E. E. et al. | 1988
- 1785
-
WSix refractory metallization for GaAs metal–semiconductor field‐effect transistorsLahav, A. G. / Wu, C. S. / Baiocchi, F. A. et al. | 1988
- 1809
-
Surface micromachining for microsensors and microactuatorsHowe, Roger T. et al. | 1988
- 1814
-
High‐speed electron beam testingChiu, George / Halbout, Jean‐Marc / May, Paul et al. | 1988
- 1820
-
Electron beam fabrication of high‐performance InGaAs/InAlAs heterojunction insulated gate field effect transistors with submicron refractory airbridge gatesTennant, D. M. / Shunk, S. C. / Feuer, M. D. / Kuo, J‐M. / Tell, B. / Behringer, R. E. / Chang, T. Y. et al. | 1988
- 1824
-
Lateral‐surface‐superlattice and quasi‐one‐dimensional GaAs/GaAlAs modulation‐doped field‐effect transistors fabricated using x‐ray and deep‐ ultraviolet lithographyIsmail, K. / Chu, W. / Antoniadis, D. A. / Smith, Henry I. et al. | 1988
- 1828
-
Hybrid lithography of a focused ion beam and an electron beam for the fabrication of a GaAs field effect transistor with a mushroom gateHosono, K. / Fujino, T. / Matsuda, S. / Nagahama, K. / Sasaki, Y. / Morimoto, H. / Watakabe, Y. et al. | 1988
- 1832
-
Focused ion implantation of gallium arsenide metal–semiconductor field effect transistors with laterally graded doping profilesEvason, A. F. / Cleaver, J. R. A. / Ahmed, H. et al. | 1988
- 1836
-
Lithography issues in fabricating high‐performance sub‐100‐nm channel metal–oxide semiconductor field effect transistorsKern, D. P. / Rishton, S. A. / Chang, T. H. P. / Sai‐Halasz, G. A. / Wordeman, M. R. / Ganin, E. et al. | 1988
- 1841
-
Si metal–oxide semiconductor field effect transistor with 70‐nm slotted gates for study of quasi‐one‐dimensional quantum transportScott‐Thomas, J. H. F. / Kastner, M. A. / Antoniadis, D. A. / Smith, Henry I. / Field, Stuart et al. | 1988
- 1845
-
Electron wave diffraction by nanometer grating and its application for high‐speed transistorsFuruya, Kazuhito / Kurishima, Kenji et al. | 1988
- 1849
-
Fabrication of submicrometer freestanding single‐crystal gallium arsenide and silicon structures for quantum transport studiesHasko, D. G. / Potts, A. / Cleaver, J. R. A. / Smith, C. G. / Ahmed, H. et al. | 1988
- 1852
-
Fabrication and transport characteristics of semiconductor wire and ring structuresIshibashi, K. / Takagaki, Y. / Gamo, K. / Namba, S. / Takaoka, S. / Murase, K. / Ishida, S. / Aoyagi, Y. et al. | 1988
- 1856
-
Fabrication and characterization of one‐ and zero‐dimensional electron systemsLee, K. Y. / Smith, T. P. / Arnot, H. / Knoedler, C. M. / Hong, J. M. / Kern, D. P. / Laux, S. E. et al. | 1988
- 1861
-
Nanostructure fabrication of zero‐dimensional quantum dot diodesRandall, J. N. / Reed, M. A. / Matyi, R. J. / Moore, T. M. et al. | 1988
- 1865
-
Selective area nucleation for metal chemical vapor deposition using focused ion beamsKubena, R. L. / Stratton, F. P. / Mayer, T. M. et al. | 1988
- 1869
-
In situ observation on electron beam induced chemical vapor deposition by transmission electron microscopyIchihashi, Toshinari / Matsui, Shinji et al. | 1988
- 1873
-
High‐resolution deposition and etching of metals with a scanning electrochemical microscopeHüsser, Oskar E. / Craston, Derek H. / Bard, Allen J. et al. | 1988
- 1877
-
Direct deposition of 10‐nm metallic features with the scanning tunneling microscopeMcCord, M. A. / Kern, D. P. / Chang, T. H. P. et al. | 1988
- 1881
-
Dry etching: From plasma ashing to quantum dotsLehmann, Hans W. et al. | 1988
- 1885
-
Radical beam/ion beam etching of GaAsSkidmore, J. A. / Coldren, L. A. / Hu, E. L. / Merz, J. L. / Asakawa, K. et al. | 1988
- 1889
-
Reactive ion etching of epitaxial ZnSe thin filmsClausen, E. M. / Craighead, H. G. / Schiavone, L. M. / Tamargo, M. C. / de Miguel, J. L. et al. | 1988
- 1892
-
Mechanistic studies of oxygen plasma etchingHartney, M. A. / Greene, W. M. / Soane, D. S. / Hess, D. W. et al. | 1988
- 1896
-
Experimental conditions for uniform anisotropic etching of silicon with a microwave electron cyclotron resonance plasma systemHopwood, J. / Reinhard, D. K. / Asmussen, J. et al. | 1988
- 1900
-
A heating model for excimer laser projection processingPalmer, S. / Matteson, S. et al. | 1988
- 1906
-
Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structuresWong, H. F. / Green, D. L. / Liu, T. Y. / Lishan, D. G. / Bellis, M. / Hu, E. L. / Petroff, P. M. / Holtz, P. O. / Merz, J. L. et al. | 1988
- 1911
-
Passivation of donors in electron beam lithographically defined nanostructures after methane/hydrogen reactive ion etchingCheung, R. / Thoms, S. / McIntyre, I. / Wilkinson, C. D. W. / Beaumont, S. P. et al. | 1988
- 1916
-
Dry etching induced damage on vertical sidewalls of GaAs channelsPang, S. W. / Goodhue, W. D. / Lyszczarz, T. M. / Ehrlich, D. J. / Goodman, R. B. / Johnson, G. D. et al. | 1988
- 1921
-
The interference fringe alignerWhite, D. L. / Feldman, M. / Saunders, T. E. / Gunter, P. et al. | 1988
- 1925
-
Measuring overlay errors and critical dimensions by correlating binarized Laplacian of Gaussian convolved imagesCrossley, P. A. / Nishihara, H. K. et al. | 1988
- 1930
-
Proposal for a new submicron dimension reference for an electron beam metrology systemNakayama, Yoshinori / Okazaki, Shinji / Sugimoto, Aritoshi et al. | 1988
- 1934
-
Patterned wafer inspection using laser holography and spatial frequency filteringCavan, D. L. / Lin, L. H. / Howe, R. B. / Graves, R. E. / Fusek, R. L. et al. | 1988
- 1940
-
Scanning ion microscopy and microsectioning of electron beam recrystallized silicon on insulator devicesKirk, E. C. G. / McMahon, R. A. / Cleaver, J. R. A. / Ahmed, H. et al. | 1988
- 1944
-
Measurement techniques for submicron resist imagesRosenfield, Michael G. et al. | 1988
- 1950
-
Computational tools to analyze voltage contrast detectorsKhursheed, A. / Dinnis, A. R. / Hall, D. J. / Knowles, W. R. et al. | 1988
- 1953
-
Characteristics of a virtual immersion lens spectrometer for electron beam testingAton, T. / Garth, S. C. J. / Sackett, J. N. / Spicer, D. F. et al. | 1988
- 1958
-
EBT‐1: A highly automated, practical electron beam testerKoyama, K. / Tojo, T. / Sugihara, T. / Takigawa, T. / Sano, T. / Ishikawa, M. / Matsuda, K. et al. | 1988
- 1963
-
Test system timing considerations for electron beam microprobing of logic devicesLange, J. A. et al. | 1988
- 1966
-
Voltage contrast electron beam testing experiments on very large scale integrated chip packaging substratesWoodard, Ollie C. / Hartnett, Fred / Myers, Tom / Ross, Andrew / Thompson, Ronald et al. | 1988
- 1971
-
High‐resolution, low‐energy beams by means of mirror opticsMunro, E. / Orloff, J. / Rutherford, R. / Wallmark, J. et al. | 1988
- 1977
-
Coulomb interactions in particle beamsJansen, G. H. et al. | 1988
- 1984
-
A new method for measuring the virtual object diameter of high‐field electron sourcesGesley, Mark et al. | 1988
- 1989
-
Novel Monte Carlo simulation of space‐charge‐induced energy broadening in laser irradiated cathodesAllee, D. R. / Pehoushek, J. D. / Pease, R. F. W. et al. | 1988
- 1995
-
Recent advances with the variable axis immersion lensSturans, M. A. / Pfeiffer, H. C. / Stickel, W. / Groves, T. R. et al. | 1988
- 1999
-
Electrostatic focusing and electrostatic deflection systems with reduced aperture aberrationsOku, Kentaro / Maruyama, Masanori / Fukushima, Masakazu et al. | 1988
- 2003
-
A voltage‐contrast analyzer using radial magnetic field extractionDinnis, A. R. / Khursheed, A. et al. | 1988
- 2005
-
Electron optical characteristics of negative electron affinity cathodesSanford, Colin A. / MacDonald, Noel C. et al. | 1988
- 2009
-
Nanowriter: A new high‐voltage electron beam lithography system for nanometer‐scale fabricationChen, Z. W. / Jones, G. A. C. / Ahmed, H. et al. | 1988
- 2014
-
A vector‐scan thermal‐field emission nanolithography systemGesley, M. A. / Hohn, F. J. / Viswanathan, R. G. / Wilson, A. D. et al. | 1988
- 2019
-
A thermally assisted field emission electron beam exposure systemNakazawa, H. / Takemura, H. / Isobe, M. / Nakagawa, Y. / Hassel Shearer, M. / Thompson, W. et al. | 1988
- 2023
-
Microstructures for particle beam controlJones, G. W. / Jones, S. K. / Walters, M. / Dudley, B. et al. | 1988
- 2028
-
EL3 system for quarter‐micron electron beam lithographyGroves, T. R. / Pfeiffer, H. C. / Newman, T. H. / Hohn, F. J. et al. | 1988
- 2033
-
A Monte Carlo simulation of electron beam lithography used to create 0.5‐μm structures on GaAsCummings, K. D. / Resnick, D. J. et al. | 1988
- 2037
-
Optimization of the proximity parameters for the electron beam exposure of nanometer gate‐length GaAs metal–semiconductor field effect transistorsPatrick, W. / Vettiger, P. et al. | 1988
- 2042
-
Evaluation of the proximity effect and GHOST correction technique for submicron electron beam lithography at 50 and 20 kVKostelak, R. L. / Kung, E. H. / Thomson, M. G. R. / Vaidya, S. et al. | 1988
- 2048
-
A parallel processing approach to proximity correctionOtto, O. W. / Griffith, A. K. et al. | 1988
- 2053
-
Electron beam interaction with substrate in electron beam lithography: A scaling experiment to test transport theorySchmoranzer, H. et al. | 1988
- 2057
-
Monte Carlo calculation of low‐energy electron emission from surfacesAllen, T. E. / Kunz, R. R. / Mayer, T. M. et al. | 1988
- 2061
-
Integrated data conversion for the electron beam exposure system EX‐7Koyama, K. / Ikenaga, O. / Abe, T. / Yoshikawa, R. / Takigawa, T. / Watanabe, S. et al. | 1988
- 2066
-
Spot‐size measurement in an electron‐beam pattern generator.Chisholm, T. et al. | 1988
- 2070
-
Active electronic compensation of ambient magnetic fields for electron optical columnsGolladay, S. D. et al. | 1988
- 2074
-
Quantitative analysis of resolution and stability in nanometer electron beam lithographyKratschmer, E. / Rishton, S. A. / Kern, D. P. / Chang, T. H. P. et al. | 1988
- 2080
-
Sub‐0.5‐μm lithography with a new ion projection lithography machine using silicon open stencil masksBuchmann, L.‐M. / Csepregi, L. / Heuberger, A. / Müller, K. P. / Chalupka, A. / Hammel, E. / Löschner, H. / Stengl, G. et al. | 1988
- 2085
-
The dependence of droplet charge distribution on frequency in liquid metal ion sourcesBahasadri, A. / Brown, W. L. / Saedi, R. / Pourrezaei, K. et al. | 1988
- 2090
-
Transverse thermal velocity broadening of focused beams from liquid metal ion sourcesWard, J. W. / Kubena, R. L. / Utlaut, M. W. et al. | 1988
- 2095
-
Extraction performance of dual‐grid ion optics: Simulation and experimentKorzec, D. / Schmitz, K. / Engemann, J. et al. | 1988
- 2100
-
Focused ion beam induced optical emission spectroscopyWard, B. W. / Ward, M. / Edwards, D. / Economou, N. P. et al. | 1988
- 2104
-
A new approach to simulating the operation of liquid metal ion sourcesZheng, Cui / Linsu, Tong et al. | 1988
- 2108
-
A new method for improving gallium liquid metal ion source stabilityGalovich, C. S. / Wagner, A. et al. | 1988
- 2112
-
High‐resolution fabrication process for silicon ion masksFong, F‐O. / Sen, S. / Stumbo, D. P. / Wolfe, J. C. / Randall, John N. et al. | 1988
- 2115
-
Applications of a variable energy focused ion beam systemNarum, D. H. / Pease, R. F. W. et al. | 1988
- 2120
-
Preliminary experimental study of the multiple ion beam machineAndo, Masaaki / Muray, Julius J. et al. | 1988
- 2124
-
Defect study in GaAs bombarded by low‐energy focused ion beamsGamo, Kenji / Miyake, Hideto / Yuba, Yoshihiko / Namba, Susumu / Kasahara, H. / Sawaragi, H. / Aihara, Ruso et al. | 1988
- 2128
-
Precisely controlled oscillating mirror system for highly uniform exposure in synchrotron radiation lithographyFujii, K. / Okada, K. / Nagano, M. / Kuroda, H. et al. | 1988
- 2132
-
Experimental results with a scanning stepper for synchrotron‐based x‐ray lithographyCullmann, E. / Cooper, K. et al. | 1988
- 2135
-
An x‐ray stepper for synchrotron radiation lithographyKouno, Eiichi / Tanaka, Yoshiharu / Iwata, Joji / Tasaki, Yoshiyuki / Kakimoto, Emi / Okada, Koichi / Suzuki, Katsumi / Fujii, Kiyoshi / Nomura, Eiichi et al. | 1988
- 2139
-
Magnification corrected imaging in synchrotron radiation x‐ray lithographyMüller, K.‐H. / Brehm, K. / Werner, K. et al. | 1988
- 2142
-
Moiré method and zone plate pattern inaccuraciesVladimirsky, Y. / Koops, H. W. P. et al. | 1988
- 2147
-
Fabrication of fully scaled 0.5‐μm n‐type metal–oxide semiconductor test devices using synchrotron x‐ray lithography: Overlay, resist processes, and device fabricationSilverman, J. P. / DiMilia, V. / Katcoff, D. / Kwietniak, K. / Seeger, D. / Wang, L. K. / Warlaumont, J. M. / Wilson, A. D. / Crockatt, D. / Devenuto, R. et al. | 1988
- 2153
-
Applications of microfabrication technology to x‐ray laser cavitiesHawryluk, Andrew M. / Ceglio, Natale M. / Stearns, Daniel G. et al. | 1988
- 2158
-
Sensitivity‐enhanced x‐ray lithography using radiation‐induced grafting to poly(phenyl methacrylate)Mochiji, Kozo / Oizumi, Hiroaki / Sooda, Yasunari / Ogawa, Taro / Kimura, Takeshi et al. | 1988
- 2162
-
Soft x‐ray projection lithography using an x‐ray reduction cameraHawryluk, Andrew M. / Seppala, Lynn G. et al. | 1988
- 2167
-
Characteristics of optical components for soft x‐ray microscopy and x‐ray holography using an undulator radiation optical systemKakuchi, M. / Yoshihara, H. / Tamamura, T. / Maezawa, H. / Kagoshima, Y. / Ando, M. et al. | 1988
- 2170
-
Repair of electroplated gold masks for x‐ray lithographyWeigmann, U. / Petzold, H.‐C. / Burghause, H. / Putzar, R. / Schaffer, H. et al. | 1988
- 2174
-
Use of ion implantation to eliminate stress‐induced distortion in x‐ray masksKu, Yao C. / Smith, Henry I. / Plotnik, Irving et al. | 1988
- 2178
-
Mechanical characterization of membranes for x‐ray lithography masksUzoh, C. E. / Maldonado, J. R. / Dana, S. S. / Acosta, R. / Babich, I. / Vladimirsky, O. et al. | 1988
- 2184
-
Sub‐half‐micron critical dimension control in x‐ray lithography mask technologyHuber, H.‐L. / Pongratz, S. / Trube, J. / Windbracke, W. / Mescheder, U. / Mund, F. et al. | 1988
- 2190
-
Quantitative in situ characterization of x‐ray mask distortionsWells, G. M. / Chen, G. / So, D. / Brodsky, E. L. / Kriesel, K. / Cerrina, F. / Karnezos, M. et al. | 1988
- 2196
-
Fully scaled 0.5 μm metal–oxide semiconductor circuits by synchrotron x‐ray lithography: Mask fabrication and characterizationViswanathan, R. / Acosta, R. E. / Seeger, D. / Voelker, H. / Wilson, A. / Babich, I. / Maldonado, J. / Warlaumont, J. / Vladimirsky, O. / Hohn, F. et al. | 1988
- 2202
-
High‐resolution and high‐fidelity x‐ray mask structure employing embedded absorbersChou, S. Y. / Maluf, N. I. / Pease, R. F. W. et al. | 1988
- 2207
-
Optical printability of defects in two‐dimensional patternsHuynh, Bachvan / Toh, K. K. H. / Haller, W. E. / Neureuther, A. R. et al. | 1988
- 2213
-
Mask bias in submicron optical lithographyMack, Chris A. / Kaufman, Patricia M. et al. | 1988
- 2221
-
Three‐dimensional photolithography with conformal GeSe resistVadimsky, Richard G. et al. | 1988
- 2224
-
Organometallic materials in lithography: A reviewHatzakis, M. / Shaw, J. / Babich, E. / Paraszczak, J. et al. | 1988
- 2229
-
Thin titanium dioxide films as interlayers in trilayer‐resist structuresStillwagon, L. E. / Kornblit, A. / Taylor, G. N. et al. | 1988
- 2234
-
Resist development described by least action principle‐line profile predictionBarouch, E. / Bradie, B. D. / Babu, S. V. et al. | 1988
- 2238
-
Contrast and sensitivity enhancement of resists for high‐resolution lithographyChiong, Kaolin Grace / Petrillo, Karen / Hohn, Fritz J. / Wilson, Alan D. / Moreau, Wayne M. et al. | 1988
- 2245
-
Reactive plasticizers in negative electron beam resistsNamaste, Y. M. N. / Obendorf, S. K. / Rodriguez, F. et al. | 1988
- 2249
-
PRISM: Process for resist profile improvement with surface modificationYoshimura, Toshiyuki / Murai, Fumio / Shiraishi, Hiroshi / Okazaki, Shinji et al. | 1988
- 2254
-
Analysis by electron energy‐loss spectroscopy of poly(methylmethacrylate) electron beam resistMartinez, Jean‐Paul / Camon, Henri / Kihn, Yolande / Sevely, Jean / Balladore, Jean‐Louis et al. | 1988
- 2259
-
Highly sensitive thermally developable positive resist systemsIto, Hiroshi / Ueda, Mitsuru / Schwalm, Reinhold et al. | 1988
- 2264
-
Requirements on resist layers in deep‐etch synchrotron radiation lithographyMohr, J. / Ehrfeld, W. / Münchmeyer, D. et al. | 1988
- 2268
-
The impact of high‐sensitivity resist materials on x‐ray lithographySeligson, Daniel / Ito, Hiroshi / Willson, C. Grant et al. | 1988
- 2274
-
Ultrathin polymer films for microlithographyKuan, S. W. J. / Frank, C. W. / Fu, C. C. / Allee, D. R. / Maccagno, P. / Pease, R. F. W. et al. | 1988
- 2280
-
A study of the effect of key processing variables on the lithographic performance of Microposit SAL601‐ER7 resistBlum, Lauren / Perkins, Marjorie E. / Liu, Hua‐Yu et al. | 1988
- 2286
-
Degradation of poly(methylmethacrylate) by deep ultraviolet, x‐ray, electron beam, and proton beam irradiationsChoi, J. O. / Moore, J. A. / Corelli, J. C. / Silverman, J. P. / Bakhru, H. et al. | 1988
- 2290
-
High‐throughput nanolithography using an oxygen‐plasma resistant two‐layer resist systemLin, P. S. D. / Gozdz, A. S. et al. | 1988
- 2294
-
Contrast enhancement of resist images by surface cross‐linkageHiraoka, H. / Hinsberg, W. / Clecak, N. / Patlach, A. / Chiong, K. N. et al. | 1988
- 2298
-
High‐resolution electron beam lithography with negative organic and inorganic resistsBernstein, G. H. / Liu, W. P. / Khawaja, Y. N. / Kozicki, M. N. / Ferry, D. K. / Blum, L. et al. | 1988
- 2303
-
Process control with chemical amplification resists using deep ultraviolet and x‐ray radiationSeligson, Daniel / Das, Siddhartha / Gaw, Henry / Pianetta, Piero et al. | 1988
- 2308
-
Nanometer lithography for III–V semiconductor wires using chloromethylated poly‐α‐methylstyrene resistMaile, B. E. / Forchel, A. / Germann, R. / Menschig, A. / Meier, H. P. / Grützmacher, D. et al. | 1988