Limitations of TiSi2 as a source for dopant diffusion (English)
National licence
- New search for: Probst, V.
- New search for: Schaber, H.
- New search for: Lippens, P.
- New search for: Van den hove, L.
- New search for: De Keersmaecker, R.
- New search for: Probst, V.
- New search for: Schaber, H.
- New search for: Lippens, P.
- New search for: Van den hove, L.
- New search for: De Keersmaecker, R.
In:
Applied Physics Letters
;
52
, 21
;
1803-1805
;
1988
- Article (Journal) / Electronic Resource
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Title:Limitations of TiSi2 as a source for dopant diffusion
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Contributors:Probst, V. ( author ) / Schaber, H. ( author ) / Lippens, P. ( author ) / Van den hove, L. ( author ) / De Keersmaecker, R. ( author )
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Published in:Applied Physics Letters ; 52, 21 ; 1803-1805
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Publisher:
- New search for: American Institute of Physics
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Publication date:1988-05-23
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 52, Issue 21
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1759
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High‐efficiency fast response in photorefractive BaTiO3 at 120 °CRytz, D. / Klein, M. B. / Mullen, R. A. / Schwartz, R. N. / Valley, G. C. / Wechsler, B. A. et al. | 1988
- 1762
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Origin of modulation‐induced mode partition and Gb/s system performance of highly single‐mode 1.5 μm distributed feedback lasersChoy, M. M. / Liu, P. L. / Sasaki, S. et al. | 1988
- 1765
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Characteristics of a monolithically integrated doping superlattice optical circuitHasnain, G. / Chang‐Hasnain, C. / Dienes, A. / Whinnery, J. R. et al. | 1988
- 1768
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Molecular beam epitaxial GaAs optical detectors on silica fibersLi, Wei‐Qi / Chin, Albert / Bhattacharya, Pallab / DiVita, S. et al. | 1988
- 1771
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Coherent addition of AlGaAs lasers using microlenses and diffractive couplingLeger, James R. / Scott, Miles L. / Veldkamp, Wilfrid B. et al. | 1988
- 1774
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Dynamics of phase‐locked semiconductor laser arraysWang, S. S. / Winful, H. G. et al. | 1988
- 1777
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Erasable optical memory media with thermoplastic/absorbent double layerKobayashi, M. / Yabe, A. / Maeno, Y. / Oishi, K. / Kawamura, K. / Ohno, S. et al. | 1988
- 1779
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Graded‐thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxyBiegelsen, D. K. / Ponce, F. A. / Krusor, B. S. / Tramontana, J. C. / Yingling, R. D. et al. | 1988
- 1782
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Coherent precipitation of silicon nitride in siliconKaushik, V. S. / Datye, A. K. / Kendall, D. L. / Martinez‐Tovar, B. / Myers, D. R. et al. | 1988
- 1785
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Time‐resolved x‐ray study of Ge during pulsed laser meltingTischler, J. Z. / Larson, B. C. / Mills, D. M. et al. | 1988
- 1788
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Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxyMoniwa, Masahiro / Kusukawa, Kikuo / Murakami, Eiichi / Warabisako, Terunori / Miyao, Masanobu et al. | 1988
- 1791
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New accurate exploitation of thermally stimulated ionic current curves for alkali contaminated metal‐oxide‐silicon structuresChoquet, C. / Balland, B. et al. | 1988
- 1794
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Metal contacts to GaAs with 1 eV Schottky barrier heightWaldrop, J. R. / Grant, R. W. et al. | 1988
- 1797
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Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor depositionYew, Tri‐Rung / O, Kenneth / Reif, Rafael et al. | 1988
- 1800
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Investigation of stress effects on the direct current characteristics of GaAs metal‐semiconductor field‐effect transistors through the use of externally applied loadsMcNally, Patrick J. / Cooper, Lisa S. / Rosenberg, James J. / Jackson, T. N. et al. | 1988
- 1803
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Limitations of TiSi2 as a source for dopant diffusionProbst, V. / Schaber, H. / Lippens, P. / Van den hove, L. / De Keersmaecker, R. et al. | 1988
- 1806
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Cathodoluminescence observation of metallization‐induced stress variations in GaAs/AlGaAs multiple quantum well structuresYacobi, B. G. / Elman, B. / Jagannath, C. / Choudhury, A. N. M. Masum / Urban, M. et al. | 1988
- 1809
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Resonant tunneling in Si/Si1−xGex double‐barrier structuresLiu, H. C. / Landheer, D. / Buchanan, M. / Houghton, D. C. et al. | 1988
- 1812
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Dislocation reduction by impurity diffusion in epitaxial GaAs grown on SiDeppe, D. G. / Holonyak, N. / Hsieh, K. C. / Nam, D. W. / Plano, W. E. / Matyi, R. J. / Shichijo, H. et al. | 1988
- 1815
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Growth of CdSxSe1−x thin films by laser evaporation depositionKwok, H. S. / Zheng, J. P. / Witanachchi, S. / Shi, L. / Shaw, D. T. et al. | 1988
- 1817
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Calculations on the flux pinning action of ferroelectric crystals inside a ceramic superconductorSchilling, Osvaldo F. et al. | 1988
- 1819
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High Tc superconductor/noble‐metal contacts with surface resistivities in the 10−10 Ω cm2 rangeEkin, J. W. / Larson, T. M. / Bergren, N. F. / Nelson, A. J. / Swartzlander, A. B. / Kazmerski, L. L. / Panson, A. J. / Blankenship, B. A. et al. | 1988
- 1822
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Microwave surface resistance of YBa2Cu3O6.9 superconducting filmsMartens, J. S. / Beyer, J. B. / Ginley, D. S. et al. | 1988
- 1825
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Laser evaporation deposition of superconducting and dielectric thin filmsKwok, H. S. / Mattocks, P. / Shi, L. / Wang, X. W. / Witanachchi, S. / Ying, Q. Y. / Zheng, J. P. / Shaw, D. T. et al. | 1988
- 1828
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Preparation of superconducting thin films of calcium strontium bismuth copper oxides by coevaporationRice, C. E. / Levi, A. F. J. / Fleming, R. M. / Marsh, P. / Baldwin, K. W. / Anzlowar, M. / White, A. E. / Short, K. T. / Nakahara, S. / Stormer, H. L. et al. | 1988
- 1831
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Improved press forging of Ba2YCu3Ox superconductorGrader, G. S. / O’Bryan, H. M. / Rhodes, W. W. et al. | 1988
- 1834
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Transmission electron microscopy studies of superconducting Y‐Ba‐Cu‐O films prepared by laser depositionHwang, D. M. / Nazar, L. / Venkatesan, T. / Wu, X. D. et al. | 1988