Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)] (English)
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- New search for: Hoyt, J. L.
- New search for: Crabbe´, E.
- New search for: Gibbons, J. F.
- New search for: Pease, R. F. W.
- New search for: Hoyt, J. L.
- New search for: Crabbe´, E.
- New search for: Gibbons, J. F.
- New search for: Pease, R. F. W.
In:
Applied Physics Letters
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50
, 25
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1846
;
1987
- Article (Journal) / Electronic Resource
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Title:Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]
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Contributors:Hoyt, J. L. ( author ) / Crabbe´, E. ( author ) / Gibbons, J. F. ( author ) / Pease, R. F. W. ( author )
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Published in:Applied Physics Letters ; 50, 25 ; 1846
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Publisher:
- New search for: American Institute of Physics
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Publication date:1987-06-22
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 50, Issue 25
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1773
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Ultralow‐threshold graded‐index separate‐confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatingsDerry, Pamela L. / Yariv, Amnon / Lau, Kam Y. / Bar‐Chaim, Nadav / Lee, Kevin / Rosenberg, Jan et al. | 1987
- 1776
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InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxyTemkin, H. / Gershoni, D. / Panish, M. B. et al. | 1987
- 1779
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Effect of optical pulse duration on the XeCl laser ablation of polymers and biological tissueTaylor, R. S. / Singleton, D. L. / Paraskevopoulos, G. et al. | 1987
- 1782
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Picosecond carrier recombination dynamics of semiconductor‐doped glassesHsu, S. C. / Kwok, H. S. et al. | 1987
- 1785
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Soft x‐ray emission from subpicosecond laser‐produced plasmasKu¨hlke, D. / Herpers, U. / von der Linde, D. et al. | 1987
- 1788
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cw surface‐emitting grating‐coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergenceMitsunaga, Kazumasa / Kameya, Masaaki / Kojima, Keisuke / Noda, Susumu / Kyuma, Kazuo / Hamanaka, Koichi / Nakayama, Takashi et al. | 1987
- 1791
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Proposal for three‐dimensional internal field mapping by cw electro‐optic probingLo, Y. H. / Wu, M. C. / Zhu, Z. H. / Wang, S. Y. / Wang, S. et al. | 1987
- 1794
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Amplification of high bandwidth signals through two‐wave mixing in photorefractive Bi12SiO20 crystalsde Montchenault, G. Hamel / Loiseaux, B. / Huignard, J. P. et al. | 1987
- 1797
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Comparison of microwave and lower frequency discharges for plasma polymerizationClaude, R. / Moisan, M. / Wertheimer, M. R. / Zakrzewski, Z. et al. | 1987
- 1800
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Piezoelectricity of c‐axis oriented PbTiO3 thin filmsKushida, Keiko / Takeuchi, Hiroshi et al. | 1987
- 1802
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Nitridation of iron by pulsed excimer laser treatment under liquid ammonia: Mo¨ssbauer spectroscopic studyOgale, S. B. / Patil, P. P. / Roorda, S. / Saris, F. W. et al. | 1987
- 1805
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Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct sourceLee, M. K. / Wuu, D. S. / Tung, H. H. et al. | 1987
- 1808
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Electrical measurements on n+‐GaAs/undoped AlAs/n‐GaAs and n+‐GaAs/undoped AlAs:GaAs superlattice/n‐GaAs capacitorsKirby, P. B. / Kerr, T. M. et al. | 1987
- 1811
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Resonant Raman effect in thin‐layered AlAs‐GaAs superlatticesKobayashi, Naoki / Toriyama, Takeshi / Horikoshi, Yoshiji et al. | 1987
- 1814
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Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityChoi, K.‐K. / Levine, B. F. / Bethea, C. G. / Walker, J. / Malik, R. J. et al. | 1987
- 1817
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Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiationRalston, J. / Moretti, A. L. / Jain, R. K. / Chambers, F. A. et al. | 1987
- 1820
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Quantum confinement and strain effects in ZnSe‐ZnSxSe1−x strained‐layer superlatticesMohammed, K. / Olego, D. J. / Newbury, P. / Cammack, D. A. / Dalby, R. / Cornelissen, H. et al. | 1987
- 1823
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Kinetics of silicon‐induced mixing of AlAs‐GaAs superlatticesMei, P. / Yoon, H. W. / Venkatesan, T. / Schwarz, S. A. / Harbison, J. P. et al. | 1987
- 1826
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GaAs structures with electron mobility of 5×106 cm2/V sEnglish, J. H. / Gossard, A. C. / Sto¨rmer, H. L. / Baldwin, K. W. et al. | 1987
- 1829
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Pressure dependence of electron transport in InPPatel, D. / Sites, J. R. / Spain, I. L. et al. | 1987
- 1832
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Si donor neutralization in high‐purity GaAsPan, N. / Lee, B. / Bose, S. S. / Kim, M. H. / Hughes, J. S. / Stillman, G. E. / Arai, Ken‐ichi / Nashimoto, Y. et al. | 1987
- 1835
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Highly stable indium alloyed TbFe amorphous films for magneto‐optic memoryIijima, Tetsuo et al. | 1987
- 1838
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On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2Houle, F. A. et al. | 1987
- 1841
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Molybdenum‐silicon multilayer monochromator for the extreme ultravioletBarbee, Troy W. / Pianetta, Piero / Redaelli, Renato / Tatchyn, Roman et al. | 1987
- 1844
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Lanthanum hexaboride (LaB6) resistivity measurementWilliams, M. D. / Jackson, L. T. / Kippenhan, D. O. / Leung, K. N. / West, M. K. / Crawford, C. K. et al. | 1987
- 1846
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Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]Hoyt, J. L. / Crabbe´, E. / Gibbons, J. F. / Pease, R. F. W. et al. | 1987