Fast laser kinetic studies of the semiconductor‐metal phase transition in VO2 thin films (English)
- New search for: Walser, R. M.
- New search for: Becker, M. F.
- New search for: Walser, R. M.
- New search for: Becker, M. F.
- New search for: Ferris, S. D.
- New search for: Leamy, H. J.
- New search for: Poate, J. M.
In:
AIP Conference Proceedings
;
50
, 1
;
117-122
;
1979
- Article (Journal) / Electronic Resource
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Title:Fast laser kinetic studies of the semiconductor‐metal phase transition in VO2 thin films
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Contributors:Walser, R. M. ( author ) / Becker, M. F. ( author ) / Ferris, S. D. ( editor ) / Leamy, H. J. ( editor ) / Poate, J. M. ( editor )
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Published in:AIP Conference Proceedings ; 50, 1 ; 117-122
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Publisher:
- New search for: American Institute of Physics
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Publication date:1979-04-15
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 50, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Fundamentals of laser‐solid interactionsBloembergen, N. et al. | 1979
- 11
-
Dynamics of laser annealingAuston, D. H. / Golovchenko, J. A. / Simons, A. L. / Slusher, R. E. / Smith, P. R. / Surko, C. M. / Venkatesan, T. N. C. et al. | 1979
- 27
-
Laser generated stress waves: Their characteristics and their effects to materialsFairand, B. P. / Clauer, A. H. et al. | 1979
- 43
-
Annealing of silicon with 1.06 μm laser pulsesvon Allemen, M. / Lüthy, W. / Siregar, M. T. / Affolter, K. / Nicolet, M. A. et al. | 1979
- 49
-
Infrared laser molecular solid interaction at low temperatures under ultrahigh vacuumHeidberg, J. / Stein, H. / Nestmann, A. / Hoefs, E. / Hussla, I. et al. | 1979
- 55
-
Transient heating of metals by Microsecond‐duration CO2 laser pulses with air plasma ignitionMcKay, J. A. / Schriempf, J. T. et al. | 1979
- 61
-
Dynamic behaviors of pulsed‐laser annealing in ion‐implanted silicon studied by measuring the optical reflectanceMurakami, Kouichi / Gamo, Kenji / Namba, Susumu / Kawabe, Mitsuo / Aoyagi, Yoshinobu / Akasaka, Youichi et al. | 1979
- 67
-
Time‐resolved specular reflectivity of metals subjected to 10.6‐μm laser pulsesWalters, C. T. / Clauer, A. H. et al. | 1979
- 73
-
Kinetics of motion of crystal‐melt interfacesSpaepen, F. / Turnbull, D. et al. | 1979
- 84
-
Comparison of laser and thermal annealing of implanted‐amorphous siliconLau, S. S. / Mayer, J. W. / Tseng, W. F. et al. | 1979
- 97
-
A calculation of the thermodynamic first order amorphous semiconductor to metallic liquid transition temperatureBagley, B. G. / Chen, H. S. et al. | 1979
- 102
-
A comment on the solubility of impurities in laser annealed siliconJackson, K. A. / Leamy, H. J. et al. | 1979
- 105
-
Redistribution of very thin Sb‐layers in Si after laser annealing: A theoretical model and preliminary experimental resultsLiau, Z. L. / Tsaur, B. Y. / Lau, S. S. / Golecki, I. / Mayer, J. W. et al. | 1979
- 111
-
Laser induced structure changes in implanted semiconductors related to pulse shapeVitali, G. / Bertolotti, M. / Stagni, L. et al. | 1979
- 117
-
Fast laser kinetic studies of the semiconductor‐metal phase transition in VO2 thin filmsWalser, R. M. / Becker, M. F. et al. | 1979
- 123
-
Dopant profile changes induced by laser irradiation of silicon: comparison of theory and experimentWang, J. C. / Wood, R. F. / White, C. W. / Appleton, B. R. / Pronko, P. P. / Wilson, S. R. / Christie, W. H. et al. | 1979
- 129
-
Laser surface melting and subsequent solidificationMehrabian, R. / Kou, S. / Hsu, S. C. / Munitz, A. et al. | 1979
- 149
-
Spatial distribution of temperature rise induced by a Gaussian laser beamLax, Melvin et al. | 1979
- 155
-
Calculation of the dynamics of surface melting during laser annealingSurko, C. M. / Simons, A. L. / Auston, D. H. / Golovchenko, J. A. / Slusher, R. E. / Venkatesan, T. N. C. et al. | 1979
- 161
-
Laser melt quenching and alloyingCopley, S. M. / Beck, D. / Esquivel, O. / Bass, M. et al. | 1979
- 173
-
Laser transformation hardeningGnanamuthu, D. S. / Shaw, C. B. / Lawrence, W. E. / Mitchell, M. R. et al. | 1979
- 189
-
Heat transfer properties and microstructures of laser surface melted alloysGreenwald, L. E. / Breinan, E. M. / Kear, B. H. et al. | 1979
- 205
-
Laser assisted hot spot machiningBass, Michael / Copley, Stephen / beck, David G. / Wallace, Russell J. et al. | 1979
- 212
-
Redistribution of Cu in polycrystalline and single crystal Al after laser irradiationMea, G. Della / Mazzoldi, P. et al. | 1979
- 215
-
Pulsed YAG laser welding of ODS alloysKelly, T. J. et al. | 1979
- 221
-
Topographical characteristics of laser surface melted metalsMoore, P. / Kim, C. / Weinman, L. S. et al. | 1979
- 225
-
Analysis of laser drilling and cutting results in Al2O3 and ferritesSiekman, J. G. et al. | 1979
- 232
-
Heat treatment of laser melted M2 tool steelStrutt, P. R. / Gilbert, D. A. / Nowotny, H. / Kim, Young‐Won et al. | 1979
- 239
-
A microprobe study of rapidly solidified laser surface alloyed low carbon steelsWeinman, L. S. / Devault, J. N. et al. | 1979
- 245
-
Laser annealing of ion‐implanted semiconductorsDvurechensky, A. V. / Kachurin, G. A. / Mustafin, T. N. et al. | 1979
- 259
-
Ruby laser pulse effects in ion implanted semiconductorsRimini, E. / Baeri, P. / Campisano, S. U. / Foti, G. et al. | 1979
- 275
-
Laser annealing of ion implanted siliconWhite, C. W. / Narayan, J. / Young, R. T. et al. | 1979
- 291
-
New materials properties achievable by ion implantation doping and laser processingAppleton, B. R. / Larson, B. C. / White, C. W. / Narayan, J. / Wilson, S. R. / Pronko, P. P. et al. | 1979
- 299
-
Effects of ruby laser pulses on virgin and amorphous silicon surface layersBell, R. O. / Muller, J. C. / Toulemonde, M. / Stuck, R. / Siffert, P. et al. | 1979
- 305
-
Channeling study of the formation of arsenic clusters in siliconChu, W. K. / Masters, B. J. et al. | 1979
- 311
-
Redistribution and enhanced solubility of transition metal implants in silicon following laser irradiationCullis, A. G. / Poate, J. M. / Celler, G. K. et al. | 1979
- 317
-
Laser‐induced regrowth of 〈100〉 Ge implanted with B and P ionsMea, G. Della / Foti, G. / Majni, G. et al. | 1979
- 321
-
Elemental and dose dependent threshold for Nd‐YAG laser induced recrystallization of siliconEggermont, G. E. J. / Tamminga, Y. / Hofker, W. K. et al. | 1979
- 325
-
Annealing behavior of phosphorus implanted silicon irradiated by several lasers of different wavelengthMiyao, M. / Tamura, H. / Ohyu, K. / Tokuyama, T. et al. | 1979
- 331
-
Laser annealing of hydrogen implanted amorphous siliconPeercy, P. S. / Stein, H. J. et al. | 1979
- 337
-
Pulsed laser annealing of ion implanted siliconStephen, J. / Smith, B. J. / Blamires, N. G. et al. | 1979
- 344
-
Laser recrystallization of ion‐implanted Si by frequency‐doubled Nd:YAG laserTsu, R. / Baglin, J. E. / Tan, T. Y. / Tsai, M. Y. / Park, K. C. / Hodgson, R. et al. | 1979
- 351
-
Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laserWilson, S. R. / White, C. W. / Pronko, P. P. / Young, R. T. / Appleton, B. R. et al. | 1979
- 357
-
Laser annealing of ion‐implanted polysilicon filmsWu, C. P. / Magee, C. W. et al. | 1979
- 365
-
Annealing of ion‐implanted Si using scanned laser and electron beamsGibbons, J. F. / Gat, A. / Gerzberg, L. / Lietoila, A. / Regolini, J. L. / Sigmon, T. W. / Pease, R. F. W. / Magee, T. J. / Peng, J. / Hong, J. et al. | 1979
- 381
-
CO2 laser annealing of ion–implanted siliconCeller, G. K. / Borutta, R. / Brown, W. L. / Poate, J. M. / Rozgonyi, G. A. / Sheng, T. T. et al. | 1979
- 387
-
Comparison of laser annealing (pulsed and continuous) and furnace annealing of low‐solid solubility, Pb‐implanted SiPaine, B. M. / Williams, J. S. / Austin, M. W. / Celler, G. K. et al. | 1979
- 393
-
Recrystallization of 75As implanted silicon by a free running ruby laserRegolini, J. L. / Sigmon, T. W. / Gibbons, J. F. / Magee, T. J. / Peng, J. et al. | 1979
- 399
-
Channeling analysis of Cw Argon laser annealed, As+‐Implanted siliconWilliams, J. S. / Brown, W. L. / Poate, J. M. et al. | 1979
- 405
-
Infrared and Raman spectra of Boron implanted, laser annealed siliconEngstrom, Herbert / Bates, J. B. / Young, R. T. / Noonan, J. R. / White, C. W. et al. | 1979
- 411
-
Prevention of dislocation arrays in thermally annealed, high dose, phosphorus‐implanted Si by prior laser annealingGoodwin, C. A. et al. | 1979
- 419
-
Boundary effects in laser annealing silicon device structuresHill, C. et al. | 1979
- 425
-
The removal of implantation damage in silicon by laser irradiation and its thermal stabilityHofker, W. K. / Eggermont, G. E. J. / Tamminga, Y. / Oosthoek, D. P. et al. | 1979
- 429
-
Raman Spectroscopy of Pulsed‐laser annealed ion implanted siliconMorhange, J. F. / Kanellis, G. / Balkanski, M. / Peray, J. F. / Icole, J. / Croset, M. et al. | 1979
- 434
-
Ellipsometric analysis of laser‐annealed Si layersNakamura, K. / Kamoshida, M. / Uehara, A. / Tatsumi, R. et al. | 1979
- 440
-
Effect of thermal annealing in boron implanted, laser annealed siliconNarayan, J. / Larson, B. C. / Christie, W. H. et al. | 1979
- 446
-
Extent of annealed or melted regions as a function of energy of pulsed laser irradiationNarayan, J. / White, C. W. et al. | 1979
- 453
-
Characterization of laser irradiated silicon using x‐ray topographyPorter, W. A. / Parker, D. L. / Richardson, T. W. et al. | 1979
- 457
-
The microstructure of laser annealing siliconRozgonyi, G. A. / Leamy, H. J. / Sheng, T. T. et al. | 1979
- 463
-
Temperature distribution and microstructure in small‐diameter laser beam annealed amorphous siliconTan, T. Y. / Ho, P. S. / Tsu, R. et al. | 1979
- 470
-
Pulsed electron beam annealing of ion implanted Si layersKennedy, E. F. / Lau, S. S. / Golecki, I. / Mayer, J. W. / Tseng, W. / Minnucci, J. A. / Kirkpatrick, A. R. et al. | 1979
- 475
-
Processing of semiconductor materials by pulsed electron beamsKirkpatrick, A. R. / Greenwald, A. C. / Minnucci, J. A. / Little, R. G. et al. | 1979
- 481
-
Comparison of effects of pulsed ruby laser and pulsed electron beam annealing of 75As+ implanted siliconWilson, S. R. / Appleton, B. R. / White, C. W. / Narayan, J. et al. | 1979
- 487
-
Laser induced epitaxy of amorphous deposited siliconBean, J. C. / Leamy, H. J. / Poate, J. M. / Rozgonyi, G. A. / van der Ziel, J. / Williams, J. S. / Celler, G. K. et al. | 1979
- 492
-
Laser effects on amorphous siliconBertolotti, M. / Vitali, G. / Spear, W. E. et al. | 1979
- 496
-
Laser‐annealing behavior of deposited and implant‐produced amorphous Si layers on Si substratesHess, L. D. / Roth, J. A. / Anderson, C. L. / Dunlap, H. L. et al. | 1979
- 503
-
A comparison of laser and electron beam pulsed annealing of deposited layersLau, S. S. / Tseng, W. F. / Golecki, I. / Kennedy, E. F. / Mayer, J. W. et al. | 1979
- 509
-
Laser annealing for solid‐phase thin‐film reactionsKiau, Z. L. / Tsaur, B. Y. / Mayer, J. W. et al. | 1979
- 515
-
Aluminum silicon laser alloying with implications for mass storageParks, H. G. / Kirkpatrick, C. G. et al. | 1979
- 521
-
Detailed characterization of metal semiconductor alloys produced by single laser pulsesParks, H. G. / Rose, K. et al. | 1979
- 527
-
Laser induced reactions of metal films with siliconPoate, J. M. / Leamy, H. J. / Sheng, T. T. / Celler, G. K. et al. | 1979
- 533
-
Crystallization of amorphous silicides by energy beam annealingTan, T. Y. / Tsu, R. / Ho, P. S. / Tu, K. N. et al. | 1979
- 539
-
Laser‐induced formation of metal‐silicidesWittmer, M. / von Allmen, M. et al. | 1979
- 543
-
Electrical properties of laser annealed siliconBenton, J. L. / Kimerling, L. C. / Miller, G. L. / Robinson, D. A. H. / Celler, G. K. et al. | 1979
- 550
-
Deep levels in ion‐implanted, CW laser‐annealed siliconJohnson, N. M. / Gold, R. B. / Lietoila, A. / Gibbons, J. F. et al. | 1979
- 556
-
Charge collection microscopy of laser annealed siliconLeamy, H. J. / Ferris, S. D. / Miller, G. L. / Brown, W. L. / Celler, G. K. et al. | 1979
- 563
-
Electrical characterization of low‐dose ion‐implanted silicon annealed with microsecond laser pulsesMyers, D. R. / Roitman, P. / Mayo, S. et al. | 1979
- 569
-
Electrical properties and annealing kinetics study of laser‐annealed ion‐implanted siliconWang, K. L. / Liu, Y. S. / Kirkpatrick, C. G. / Possin, G. E. et al. | 1979
- 579
-
Transmission electron microscopy and electrical properties measurements of laser doped silicon and GaAsYoung, R. T. / Narayan, J. / Westbrook, R. D. / Wood, R. F. et al. | 1979
- 585
-
Laser‐annealed Si and Se Implants for GaAs microwave devicesAnderson, C. L. / Dunlap, H. L. / Hess, L. D. / Vaidyanathan, K. V. et al. | 1979
- 591
-
Laser‐annealing of Te ion implanted GaAsGamo, K. / Katano, F. / Yuba, Y. / Murakami, K. / Namba, S. et al. | 1979
- 597
-
Laser annealing of ion‐implanted GaAsKim, Quiesup / Park, Y. S. / Mason, R. S. / Luke, T. E. / Hengehold, R. L. / Yeo, Y. K. et al. | 1979
- 603
-
Annealing of ion‐implanted GaAs with Nd:Glass laserLiu, S. G. / Wu, C. P. / Magee, C. W. et al. | 1979
- 616
-
Pulsed annealing of implanted semi‐insulating GaAsTandon, J. L. / Eisen, F. H. et al. | 1979
- 623
-
Laser induced damage and recrystallization of ion implanted GaAs by frequency‐doubled Nd:YAG laserTsu, Raphael / Baglin, John E. / Lasher, Gordon J. / Tsang, James C. et al. | 1979
- 629
-
Study of surface crystallinity and stoichiometry of laser annealed GaAs using time resolved reflectivity and channelingVenkatesan, T. N. C. / Auston, D. H. / Golovchenko, J. A. / Surko, C. M. et al. | 1979
- 635
-
Laser alloying of Au‐Ge ohmic contacts on GaAsGold, R. B. / Powell, R. A. / Gibbons, J. F. et al. | 1979
- 641
-
Laser‐annealed ohmic contacts for GaAs microwave devicesEckhardt, G. / Anderson, C. L. / Hess, L. D. / Krumm, C. F. et al. | 1979
- 647
-
Ohmic contacts produced by laser‐annealing Te‐implanted GaAsBarnes, P. A. / Leamy, H. J. / Poate, J. M. / Ferris, S. D. / Williams, J. S. / Celler, G. K. et al. | 1979
- 653
-
Laser annealing of ion‐implanted indium phosphideCullis, A. G. / Webber, H. C. / Robertson, D. S. et al. | 1979
- 659
-
Laser synthesis of silicon nitride powdersDanforth, S. C. / Flint, J. H. / Cannon, W. R. / Haggerty, J. S. et al. | 1979
- 665
-
Laser annealing of CdSe thin filmsFeenstra, R. M. / Parsons, R. R. / Shepherd, F. R. / Westwood, W. D. / Ingrey, S. J. et al. | 1979
- 671
-
A bibliography on laser processing of semiconductorsStevens, B. A. et al. | 1979