The characterization and optimization of masked ion beam lithography with 〈100〉 silicon channeling masks (English)
- New search for: Atkinson, G. M.
- New search for: Bartelt, J. L.
- New search for: Neureuther, A. R.
- New search for: Cheung, N. W.
- New search for: Atkinson, G. M.
- New search for: Bartelt, J. L.
- New search for: Neureuther, A. R.
- New search for: Cheung, N. W.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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5
, 1
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232-235
;
1987
- Article (Journal) / Electronic Resource
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Title:The characterization and optimization of masked ion beam lithography with 〈100〉 silicon channeling masks
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Additional title:Masked ion beam lithography
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Contributors:Atkinson, G. M. ( author ) / Bartelt, J. L. ( author ) / Neureuther, A. R. ( author ) / Cheung, N. W. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1987-01-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:ION CHANNELING , MASKING , LITHOGRAPHY , ION BEAMS , RESOLUTION , THICKNESS , SENSITIVITY , MEMBRANES , IMAGES , SILICON , OPTIMIZATION , Si
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Source:
Table of contents – Volume 5, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Implant and impurity redistribution during ion induced TaSi2 formationGaluska, A. A. et al. | 1987
- 10
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Orientation dependence of crystal defects formation in Si molecular beam epitaxyHirofuji, Yuichi / Matsuo, Naoto et al. | 1987
- 15
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Intrinsic SiO2 film stress measurements on thermally oxidized SiKobeda, E. / Irene, E. A. et al. | 1987
- 20
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Photodeposition rates of metal from metal alkylsKrchnavek, Robert R. / Gilgen, Heinz H. / Chen, Julian C. / Shaw, Ping S. / Licata, Thomas J. / Osgood, Richard M. et al. | 1987
- 27
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X‐ray sources for microlithography created by laser radiation at λ=0.26 μmPépin, H. / Alaterre, P. / Chaker, M. / Fabbro, R. / Faral, B. / Toubhans, I. / Nagel, D. J. / Peckerar, M. et al. | 1987
- 33
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Computer‐controlled electron‐beam writing system for thin film micro‐opticsShiono, Teruhiro / Setsune, Kentaro / Yamazaki, Osamu / Wasa, Kiyotaka et al. | 1987
- 47
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EBES4: A new electron‐beam exposure systemAlles, D. S. / Biddick, C. J. / Bruning, J. H. / Clemens, J. T. / Collier, R. J. / Gere, E. A. / Harriott, L. R. / Leone, F. / Liu, R. / Mulrooney, T. J. et al. | 1987
- 53
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The EBES4 electron‐beam columnThomson, M. G. R. / Liu, R. / Collier, R. J. / Carroll, H. T. / Doherty, E. T. / Murray, R. G. et al. | 1987
- 57
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A hydraulic X–Y stage system for application in electron beam exposure systemsNielsen, R. J. / Bruning, J. H. / Richman, R. M. / Biddick, C. J. / Giacchi, J. / Kossyk, G. J. W. / Bush, D. R. / Barna, S. J. / Alles, D. S. et al. | 1987
- 61
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EB60: An advanced direct wafer exposure electron‐beam lithography system for high‐throughput, high‐precision, submicron pattern writingFujinami, Minpei / Shimazu, Nobuo / Hosokawa, Teruo / Shibayama, Akinori et al. | 1987
- 66
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A high‐speed patterning controller for the EB60 electron beam lithography systemMorosawa, Tetsuo / Shibayama, Akinori / Murashita, Toru / Fujinami, Minpei et al. | 1987
- 70
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A high dose and high accuracy variable shaped electron beam exposure system for quartermicron device fabricationYoshikawa, R. / Wada, H. / Goto, M. / Kusakabe, H. / Ikenaga, O. / Tamamushi, S. / Ninomiya, M. / Takigawa, T. et al. | 1987
- 75
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A novel high‐speed nanometric electron beam lithography system: EB–FIwadate, Kazumi / Yamaguchi, Ryoichi / Hirata, Kazuo / Harada, Katsuhiro et al. | 1987
- 79
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Automatic electron beam metrology system for development of very large‐scale integrated devicesMatsuoka, Genya / Ichihasi, Mikio / Murakoshi, Hisaya / Yamamoto, Kenichi et al. | 1987
- 84
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Electron beam probing system with ultrahigh time resolutionOzaki, K. / Ito, A. / Goto, Y. / Furukawa, Y. / Inagaki, T. et al. | 1987
- 88
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High resolution patterning system with a single bore objective lensNewman, T. H. / Williams, K. E. / Pease, R. F. W. et al. | 1987
- 92
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Prototype to production using the Hewlett–Packard quarter‐micron electron beam systemStudebaker, Lawrence G. / DeWitte, Gordon J. / Bugely, Faith L. / Riehl, David H. et al. | 1987
- 97
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Electron‐beam programming and testing of complementary metal‐oxide semiconductor systemsLyszczarz, T. M. / Oliver, S. / Fried, J. et al. | 1987
- 102
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Archival information storage by selective electron beam melting of structured targetsOro, James A. / Wolfe, J. C. et al. | 1987
- 105
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The effect of acceleration voltage on linewidth control with a variable‐shaped electron beam systemMurai, Fumio / Okazaki, Shinji / Saito, Norio / Dan, Masahiro et al. | 1987
- 110
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Exposing submicron patterns with a variable shaped electron beam machineGu, W. Q. / He, M. H. / Han, R. T. et al. | 1987
- 114
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Submicron electron‐beam lithography using a beam size comparable to the linewidth control toleranceRosenfield, M. G. / Bucchignano, J. J. / Rishton, S. A. / Kern, D. P. / Kettell, L. M. / Molzen, W. W. / Hohn, F. J. / Viswanathan, R. / Warlaumont, J. M. et al. | 1987
- 120
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Very high voltage (500 kV) electron beam lithography for thick resists and high resolutionJones, G. A. C. / Blythe, S. / Ahmed, H. et al. | 1987
- 124
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Studies of energy dissipation in resist films by a Monte Carlo simulation based on the Mott cross sectionMurata, K. / Kawata, H. / Nagami, K. / Hirai, Y. / Mano, Y. et al. | 1987
- 129
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Theoretical analysis of electron‐beam exposure parameters and etching selectivity upon organosilicon bilayer resist imagesParaszczak, J. / Rosenfield, M. / Hatzakis, M. et al. | 1987
- 135
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Point exposure distribution measurements for proximity correction in electron beam lithography on a sub‐100 nm scaleRishton, S. A. / Kern, D. P. et al. | 1987
- 142
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Three‐dimensional Monte Carlo calculation by a supercomputerHasegawa, Shinya / Iida, Yasuo / Hidaka, Toshiharu et al. | 1987
- 146
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Fast Monte Carlo simulation of charged particle beamsJansen, G. H. et al. | 1987
- 150
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Characterization of a low voltage, high current density electron probeKinalidis, Christodoulos / Wolfe, J. C. et al. | 1987
- 153
-
Optimization of the magnetic deflection system by the method of orthogonal designXie Zhi‐xing / Huang Da‐quan / Shen Qing‐gai et al. | 1987
- 156
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The field solutions for multipole electrostatic deflectorsJiang, Xin‐rong / Na, Zhao‐feng et al. | 1987
- 161
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Computer programs for designing multipole electron and ion optical systemsSmith, M. R. / Munro, E. et al. | 1987
- 165
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Design of an electrostatic optical system for ion beam lithographyTang, T. T. / Sheng, C. Y. et al. | 1987
- 169
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Computer simulation of current density profiles in focused ion beamsWard, J. W. / Utlaut, M. W. / Kubena, R. L. et al. | 1987
- 175
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Comparison of optical design approaches for use with liquid metal ion sourcesOrloff, J. et al. | 1987
- 178
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Investigation of the liquid metal ion source cluster beam constituents and their role in the properties of the deposited filmFrançois, M. / Pourrezaei, K. / Bahasadri, A. / Nayak, D. et al. | 1987
- 184
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Gallium clusters from a liquid metal ion sourceBarr, D. L. et al. | 1987
- 190
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Development of boron liquid metal ion source for focused ion beam systemHiguchi‐Rusli, R. H. / Cadien, K. C. / Corelli, J. C. / Steckl, A. J. et al. | 1987
- 195
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Summary Abstract: Physical aspects of gaseous field ion beam current stabilitySchwoebel, P. R. / Hanson, G. R. et al. | 1987
- 197
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Long‐lifetime, reliable liquid metal ion sources for boron, arsenic, and phosphorusClark, W. M. / Seliger, R. L. / Utlaut, M. W. / Bell, A. E. / Swanson, L. W. / Schwind, G. A. / Jergenson, J. B. et al. | 1987
- 203
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Formation of submicron isolation region in GaAs by Ga focused ion beam implantationNakamura, K. / Nozaki, T. / Shiokawa, T. / Toyoda, K. / Namba, S. et al. | 1987
- 207
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Micromachining of optical structures with focused ion beamsHarriott, L. R. / Scotti, R. E. / Cummings, K. D. / Ambrose, A.F et al. | 1987
- 211
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A GaAs metal‐semiconductor field‐effect transistor with a mushroom gate fabricated by mixed exposure of focused ion beamsMorimoto, H. / Onoda, H. / Sasaki, Y. / Mitsui, Y. / Ishihara, O. / Kato, T. et al. | 1987
- 215
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Masked ion beam lithography for submicrometer‐gate‐length transistorsPang, S. W. / Lyszczarz, T. M. / Chen, C. L. / Donnelly, J. P. / Randall, J. N. et al. | 1987
- 219
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A minimum step fabrication process for the all‐silicon channeling maskAtkinson, G. M. / Bartelt, J. L. / Middleton, P. L. et al. | 1987
- 223
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The thermomechanical stability of ion beam masksRandall, John N. / Sivasankar, R. et al. | 1987
- 228
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Channeling transmission of protons through thin silicon membranesParma, E. J. / Hart, R. R. / Bartelt, J. L. et al. | 1987
- 232
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The characterization and optimization of masked ion beam lithography with 〈100〉 silicon channeling masksAtkinson, G. M. / Bartelt, J. L. / Neureuther, A. R. / Cheung, N. W. et al. | 1987
- 236
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Geometrical design of an alignment mark for focused ion beam implantation in GaAs using Monte Carlo simulation of ion trajectoriesMorita, Tetsuo / Miyauchi, Eizo / Arimoto, Hiroshi / Takamori, Akira / Bamba, Yasuo / Hashimoto, Hisao et al. | 1987
- 241
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High speed zone plate alignment systemsFeldman, M. / Wong, G. G. / Cheng, M. et al. | 1987
- 244
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An automatic mask alignment technique using moiré interferenceUchida, Yoshiyuki / Hattori, Shuzo / Nomura, Tsutomu et al. | 1987
- 248
-
Thin film structure to reduce radiation damage in x‐ray lithographyMaldonado, J. R. / Reisman, A. / Lezec, H. / Bumble, B. / Williams, C. K. / Iyer, S. S. et al. | 1987
- 253
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Application of x‐ray lithography for manufacturing a metal‐oxide semiconductor field‐effect transistor tetrodeHersener, J. / Piper, E. / Wilhelm, A. / Birkenstock, G. et al. | 1987
- 257
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Radiation damage effects in boron nitride mask membranes subjected to x‐ray exposuresJohnson, W. A. / Levy, R. A. / Resnick, D. J. / Saunders, T. E. / Yanof, A. W. / Betz, H. / Huber, H. / Oertel, H. et al. | 1987
- 262
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Defects in x‐ray masks: Detection and printabilityKluwe, A. / Müller, K.‐H. / Betz, H. / Oertel, H. et al. | 1987
- 266
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Structural defects in B‐doped Si substrates for x‐ray masksUzoh, C. / Maldonado, J. R. / Angilello, J. et al. | 1987
- 272
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The use of diffraction techniques for the study of in‐plane distortions of x‐ray masksRuby, R. / Baldwin, D. / Karnezos, M. et al. | 1987
- 278
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X‐ray mask heating during electron‐beam patterningKarnezos, M. / Weimar, P. et al. | 1987
- 283
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Tungsten: An alternative to gold for x‐ray masksKarnezos, M. / Ruby, R. / Heflinger, B. / Nakano, H. / Jones, R. et al. | 1987
- 288
-
Optical lithographic tools: Current status and future potentialWilczynski, Janusz S. et al. | 1987
- 293
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Focus: The critical parameter for submicron lithographyLevinson, Harry J. / Arnold, William H. et al. | 1987
- 299
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Wafer flatness as a contributor to defocus and to submicron image tolerances in step‐and‐repeat photolithographyUnderhill, J. A. / Sundling, D. L. / Kerbaugh, M. L. et al. | 1987
- 304
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Effect of thin‐film structures upon monochromatic optical autofocus systemsLavine, J. M. et al. | 1987
- 308
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Coherence of defect interactions with features in optical imagingNeureuther, A. R. / Flanner, P. / Shen, S. et al. | 1987
- 313
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Summary Abstract: Physics and applications of quantum wells in opticsMiller, D. A. B. et al. | 1987
- 314
-
Fabrication and phonon transport studies in nanometer scale free‐standing wiresSmith, C. G. / Ahmed, H. / Wybourne, M. N. et al. | 1987
- 318
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Fabrication of 30‐nm‐scale structures for electron transport studies using a polymethylmethacrylate bilayer resistRooks, M. J. / Wind, S. / McEuen, P. / Prober, D. E. et al. | 1987
- 322
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Fabrication of ultrasmall devices on thin active GaAs membranesLee, K. Y. / Frost, J. / Stanley, C. / Patrick, W. / Mackie, W. S. / Beaumont, S. P. / Wilkinson, C. D. W. et al. | 1987
- 326
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Fabrication of ultrahigh resolution structures in compound semiconductor heterostructuresBehringer, R. E. / Mankiewich, P. M. / Howard, R. E. et al. | 1987
- 328
-
The experimental test of a microwave ion beam source in oxygenAsmussen, J. / Dahimene, M. et al. | 1987
- 332
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Chemically assisted ion beam etching of polycrystalline and (100)tungstenGarner, Charles et al. | 1987
- 337
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An apparatus for batch fabrication of micromechanical elements by ion beam machiningDavies, S. T. / Bowen, D. K. et al. | 1987
- 342
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A study of anisotropic trench etching of Si with NF3–halocarbonSellamuthu, R. / Barkanic, J. / Jaccodine, R. et al. | 1987
- 347
-
Electrostatic probe analysis of microwave plasmas used for polymer etchingHeidenreich, J. E / Paraszczak, J. R. / Moisan, M. / Sauve, G. et al. | 1987
- 355
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Control of cluster size in nozzle jet expansionYang, S. ‐N. / Lu, T. ‐M. et al. | 1987
- 359
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Unidirectional deposition of aluminum using nozzle jet beam techniqueRamayarananan, R. / Polasko, K. / Skelly, D. / Wong, J. / Mei, S.‐N. / Lu, T.‐M. et al. | 1987
- 363
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Hot‐jet etching of Pb, GaAs, and SiGeis, M. W. / Efremow, N. N. / Pang, S. W. / Anderson, A. C. et al. | 1987
- 366
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New high current low energy ion sourceHara, T. / Hamagaki, M. / Sanda, A. / Aoyagi, Y. / Namba, S. et al. | 1987
- 369
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Progress in self‐developing metal fluoride resistsKratschmer, E. / Isaacson, M. et al. | 1987
- 374
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Barium fluoride and strontium fluoride negative electron beam resistsScherer, A. / Craighead, H. G. et al. | 1987
- 379
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Cermet as an inorganic resist for ion lithographyMelngailis, J. / Ehrlich, D. J. / Pang, S. W. / Randall, J. N. et al. | 1987
- 382
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Enhanced plasma etch resistance of acrylic acid–calcium acetate modified poly(methylmethacrylate)Choi, J. O. / Kim, S. Y. / Moore, J. A. / Corelli, J. C. / Steckl, A. J. et al. | 1987
- 386
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Aryloxy‐poly(phosphazenes) as negative‐working, oxygen reactive ion etching resistant resist materialsHiraoka, H. / Chiong, Kaolin N. et al. | 1987
- 389
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Attainment of 0.13‐μm lines and spaces by excimer‐laser projection lithography in ‘‘diamond‐like’’ carbon‐resistRothschild, M. / Ehrlich, D. J. et al. | 1987
- 391
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The percolation approach to the development of pulsed laser exposed positive photoresistsBogdanov, A. L. / Valiev, K. A. / Velikov, L. V. / Zaroslov, D. Yu. et al. | 1987
- 396
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The evaluation of positive acting resists for lithography at 248 nmWolf, T. M. / Hartless, R. L. / Shugard, A. / Taylor, G. N. et al. | 1987
- 402
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A practical electron beam direct writing process technology for submicron device fabricationOkazaki, Shinji / Murai, Fumio / Suga, Osamu / Shiraishi, Hiroshi / Koibuchi, Shigeru et al. | 1987
- 405
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Focused ion beam etching of nitrocelluloseYasuoka, Y. / Harakawa, K. / Gamo, K. / Namba, S. et al. | 1987
- 409
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Damage to resist structures during scanning electron microscope inspectionErasmus, S. J. et al. | 1987
- 414
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Visible‐laser photochemical etching of Cr, Mo, and WRothschild, M. / Sedlacek, J. H. C. / Black, J. G. / Ehrlich, D. J. et al. | 1987
- 419
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Laser‐direct‐writing processes: Metal deposition, etching, and applications to microcircuitsBlack, Jerry G. / Ehrlich, Daniel J. / Rothschild, Mordechai / Doran, Scott P. / Sedlacek, Jan H. C. et al. | 1987
- 423
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Temperature dependence of maskless ion beam assisted etching of InP and Si using focused ion beamOchiai, Yukinori / Gamo, Kenji / Namba, Susumu / Shihoyama, Kazuhiko / Masuyama, Akio / Shiokawa, Takao / Toyoda, Koichi et al. | 1987
- 427
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Summary Abstract: Surface reaction enhancement via low energy electron bombardment and secondary electron emissionKunz, R. R. / Mayer, T. M. et al. | 1987
- 430
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Exposure of calcium fluoride resist with the scanning tunneling microscopeMcCord, M. A. / Pease, R. F. W. et al. | 1987
- 434
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Study of half‐micron photolithography by means of contrast enhanced lithography processHirai, Yoshihiko / Sasago, Masaru / Endo, Masayuki / Ogawa, Kazufumi / Mano, Yojiro / Ishihara, Takeshi et al. | 1987
- 439
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Application of diazonaphthoquinone compounds and a diazonium salt to contrast enhanced lithographyKaifu, Katsuaki / Itoh, Toshio / Kosuge, Maki / Yamashita, Yoshio / Ohno, Seigo / Asano, Takateru / Kobayashi, Kenji / Nagamatsu, Gentaro et al. | 1987
- 443
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Comparison of proximity effects in contrast enhancement layer and bilayer resist processesOng, Edith / Singh, Bhanwar / Ferguson, Richard A. / Neureuther, Andrew R. et al. | 1987
- 449
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A metal liftoff process facilitated by the use of contrast enhanced photolithographyWest, P. R. / Polasko, K. J. / Fasoldt, C. L. et al. | 1987