Synthesis and lithographic characterization of poly(4‐t‐butoxycarbonyloxystyrene‐sulfone) (English)
- New search for: Kometani, J. M.
- New search for: Nalamasu, O.
- New search for: Reichmanis, E.
- New search for: Kanga, R. S.
- New search for: Thompson, L. F.
- New search for: Heffner, S. A.
- New search for: Kometani, J. M.
- New search for: Nalamasu, O.
- New search for: Reichmanis, E.
- New search for: Kanga, R. S.
- New search for: Thompson, L. F.
- New search for: Heffner, S. A.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
8
, 6
;
1428-1431
;
1990
- Article (Journal) / Electronic Resource
-
Title:Synthesis and lithographic characterization of poly(4‐t‐butoxycarbonyloxystyrene‐sulfone)
-
Additional title:Synthesis and lithographic characterization of TBSS
-
Contributors:Kometani, J. M. ( author ) / Nalamasu, O. ( author ) / Reichmanis, E. ( author ) / Kanga, R. S. ( author ) / Thompson, L. F. ( author ) / Heffner, S. A. ( author )
-
Published in:
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1990-11-01
-
Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 8, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 0
-
34th International Symposium on Electron, Ion and Photon Beams, 29 May-1 June 1990, San Antonio, TX, USA| 1990
- 1177
-
Properties of silicon dioxide films prepared by low‐pressure chemical vapor deposition from tetraethylorthosilicateRojas, S. / Modelli, A. / Wu, W. S. / Borghesi, A. / Pivac, B. et al. | 1990
- 1185
-
Radio frequency plasma etching of Si/SiO2 by Cl2/O2 : Improvements resulting from the time modulation of the processing gasesMcNevin, S. C. et al. | 1990
- 1192
-
Extremely high selective, highly anisotropic, and high rate electron cyclotron resonance plasma etching for n+ poly‐Si at the electron cyclotron resonance positionSamukawa, Seiji / Sasaki, Masami / Suzuki, Yasuhiro et al. | 1990
- 1199
-
Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine‐based reactive ion etching of silicon trenchesOehrlein, G. S. / Rembetski, J. F. / Payne, E. H. et al. | 1990
- 1212
-
A thermochemical model for the plasma etching of aluminum in BCl3/Cl2 and BBr3/Br2McNevin, S. C. et al. | 1990
- 1223
-
Disintegration of TiSi2 on narrow poly‐Si lines at high temperaturesNorström, H. / Maex, K. / Vandenabeele, P. et al. | 1990
- 1232
-
Stress migration resistance and contact characterization of Al–Pd–Si interconnects for very large scale integrationsKoubuchi, Y. / Onuki, J. / Suwa, M. / Fukada, S. / Moribe, S. / Tanigaki, Y. et al. | 1990
- 1239
-
Capillary‐type cluster ion source and its application for selective deposition of aluminum filmOgura, M. / Komuro, M. / Shimizu, K. / Yabe, A. et al. | 1990
- 1242
-
A unified line‐of‐sight model of deposition in rectangular trenchesCale, T. S. / Raupp, G. B. et al. | 1990
- 1249
-
Rapid thermal processing systems: A review with emphasis on temperature controlRoozeboom, Fred / Parekh, N. et al. | 1990
- 1260
-
A Zn predeposition technique applied to GaAs/AlGaAs heterobipolar transistorsShimamoto, Y. / Itakura, K. / Ueda, D. et al. | 1990
- 1264
-
High‐temperature growth of Si‐doped AlGaAs by molecular‐beam epitaxySaito, Junji / Kondo, Kazuo et al. | 1990
- 1270
-
Temperature dependence of current conduction in barrier‐enhanced, carbon delta‐doped GaAs diodesKatz, A. / Pearton, S. J. / Ren, F. / Abernathy, C. R. et al. | 1990
- 1274
-
Use of hydrogenated chlorofluorocarbon mixtures for reactive ion etching of In‐based III–V semiconductorsPearton, S. J. / Hobson, W. S. / Chakrabarti, U. K. / Derkits, G. E. / Kinsella, A. P. et al. | 1990
- 1285
-
Susceptor and proximity rapid thermal annealing of carbon‐implanted InPKatz, A. / Pearton, S. J. et al. | 1990
- 1291
-
Photoresist etching in a hollow cathode reactorGross, M. / Horwitz, C. M. et al. | 1990
- 1297
-
An edge‐defined technique for fabricating submicron metal–semiconductor field effect transistor gatesStrifler, W. A. / Cantos, B. D. et al. | 1990
- 1300
-
Improved resolution of an i‐line stepper using a phase‐shifting maskTerasawa, Tsuneo / Hasegawa, Norio / Tanaka, Toshihiko / Katagiri, Souichi / Kurosaki, Toshiei et al. | 1990
- 1323
-
Coherent point source electron beamsFink, Hans‐Werner / Stocker, Werner / Schmid, Heinz et al. | 1990
- 1325
-
Soft x‐ray projection lithographyCeglio, N. M. / Hawryluk, A. M. / Stearns, D. G. / Gaines, D. P. / Rosen, R. S. / Vernon, S. P. et al. | 1990
- 1329
-
Imaging surface atomic structure by means of Auger electronsHubbard, Arthur T. / Frank, Douglas G. / Chyan, Oliver M. R. / Golden, Teresa et al. | 1990
- 1335
-
A novel electron-beam exposure technique for 0.1- mu m T-shaped gate fabricationSamoto, N. / Makino, Y. / Onda, K. / Mizuki, E. / Itoh, T. et al. | 1990
- 1335
-
A novel electron‐beam exposure technique for 0.1‐μm T‐shaped gate fabricationSamoto, N. / Makino, Y. / Onda, K. / Mizuki, E. / Itoh, T. et al. | 1990
- 1339
-
High aspect ratio asymmetric gate structures employed in novel self‐aligned high electron mobility transistor technologyThompson, M. A. / Jelloian, L. M. / Nguyen, L. D. / Mishra, U. K. et al. | 1990
- 1343
-
All‐level electron‐beam lithography for trench isolated nano‐metal–oxide semiconductor devicesPerera, Asanga H. / Krusius, J. Peter et al. | 1990
- 1348
-
Fabrication of closely spaced quantum dot diodesRandall, J. N. / Reed, M. A. / Kao, Y.‐C. et al. | 1990
- 1353
-
In0.53Ga0.47As/InP quantum wires: Fabrication and magnetotransport studiesMenschig, A. / Roos, B. / Germann, R. / Forchel, A. / Pressel, K. / Heuring, W. / Grützmacher, D. et al. | 1990
- 1357
-
Nanostructure fabrication in InP and related compoundsAdesida, I. / Nummila, K. / Andideh, E. / Hughes, J. / Caneau, C. / Bhat, R. / Holmstrom, R. et al. | 1990
- 1361
-
Focused ion beam micromachined three‐dimensional features by means of a digital scanXimen, H. / DeFreez, R. K. / Orloff, J. / Elliott, R. A. / Evans, G. A. / Carlson, N. W. / Lurie, M. / Bour, D. P. et al. | 1990
- 1366
-
Fabrication of coupled quantum dot arrays with a 100–150 nm periodLee, K. Y. / Kern, D. P. / Ismail, K. / Haug, R. J. / Smith, T. P. / Masselink, W. T. / Hong, J. M. et al. | 1990
- 1371
-
Optical properties of InGaAs/InP semiconductor nanostructuresWeiner, J. S. / Wang, Y. L. / Temkin, H. / Harriott, L. R. / Hamm, R. A. / Panish, M. B. et al. | 1990
- 1374
-
Merging focused ion beam patterning and optical lithography in device and circuit fabricationMurguia, James E. / Musil, Christian R. / Shepard, Mark I. / Lezec, Henri / Antoniadis, Dimitri A. / Melngailis, John et al. | 1990
- 1380
-
Vacuum lithography for three‐dimensional fabrication using finely focused ion beamsHarriott, L. R. / Temkin, H. / Wang, Y. L. / Hamm, R. A. / Weiner, J. S. et al. | 1990
- 1385
-
The effects of broadband 250 nm illumination on process latitudeKuyel, Birol / Sewell, Harry et al. | 1990
- 1392
-
Electronically wired petri dish: A microfabricated interface to the biological neuronal networkEggers, M. D. / Astolfi, D. K. / Liu, S. / Zeuli, H. E. / Doeleman, S. S. / McKay, R. / Khuon, T. S. / Ehrlich, D. J. et al. | 1990
- 1399
-
Scattering matrix analysis of electron transport in disordered Aharonov–Bohm interferometers and ballistic constrictionsCahay, M. / Bandyopadhyay, S. / Frohne, H. R. et al. | 1990
- 1404
-
First order distributed feedback gratings (92.5–105 nm period) for GaInP/AlGaInP lasers emitting in the visible rangeKorn, M. / Körfer, T. / Forchel, A. / Roentgen, P. et al. | 1990
- 1408
-
Electron‐beam lithography and chemically assisted ion beam etching for the fabrication of grating surface‐emitting broad‐area AlGaAs lasersTiberio, R. C. / Porkolab, G. A. / Johnson, J. E. / Grande, W. J. / Rathbun, L. C. / Wolf, E. D. / Craighead, H. G. / Lang, R. J. / Larsson, A. / Forouhar, S. et al. | 1990
- 1412
-
Structural control and the optimization of chlorinated styrene‐based electron resistsBrambley, D. R. / Jones, R. G. / Matsubayashi, Y. / Miller Tate, P. et al. | 1990
- 1418
-
Resist profile simulation for photoresist composition optimizationUshirogouchi, Tohru / Onishi, Yasunobu / Tada, Tsukasa et al. | 1990
- 1423
-
Modeling and simulation of a deep‐ultraviolet acid hardening resistFerguson, Richard A. / Hutchinson, John M. / Spence, Chris A. / Neureuther, Andrew R. et al. | 1990
- 1428
-
Synthesis and lithographic characterization of poly(4‐t‐butoxycarbonyloxystyrene‐sulfone)Kometani, J. M. / Nalamasu, O. / Reichmanis, E. / Kanga, R. S. / Thompson, L. F. / Heffner, S. A. et al. | 1990
- 1432
-
Positive photoresist process simulation over nonplanar substratesBarouch, Eytan / Bradie, Brian / Hollerbach, Uwe / Orszag, Steven A. et al. | 1990
- 1437
-
New compensation method for avoiding proximity resist heating in variably shaped electron beam lithographyNakajima, Ken / Honda, Toshiyuki / Matsumoto, Hiroshi et al. | 1990
- 1441
-
Multicomponent Langmuir–Blodgett resists for optical lithographyKosbar, Laura L. / Frank, Curtis W. / Pease, R. Fabian W. et al. | 1990
- 1447
-
Exposure characteristics of high‐resolution negative resistsChiong, Kaolin Grace / Wind, Shalom / Seeger, David et al. | 1990
- 1454
-
Process optimization of the advanced negative electron beam resist SAL605Fedynyshyn, Theodore H. / Cronin, Michael F. / Poli, Louis C. / Kondek, Christine et al. | 1990
- 1461
-
Characterization of novel sulfonic acid photogenerating 2‐nitrobenzyl ester derivativesHoulihan, F. M. / Neenan, T. X. / Reichmanis, E. / Kometani, J. M. / Thompson, L. F. / Chin, T. / Kanga, R. S. et al. | 1990
- 1466
-
Methylated poly(4‐hydroxystyrene): A new resin for deep‐ultraviolet resist applicationMcKean, Dennis R. / Hinsberg, William D. / Sauer, Thomas P. / Willson, Grant / Vicari, Richard / Gordon, Douglas J. et al. | 1990
- 1470
-
Comparison of exposure, bake, and dissolution characteristics of electron beam and optically exposed chemically amplified resistsTam, N. N. / Ferguson, R. A. / Titus, A. / Hutchinson, J. M. / Spence, C. A. / Neureuther, A. R. et al. | 1990
- 1476
-
Silylation processes based on ultraviolet laser‐induced crosslinkingHartney, M. A. / Rothschild, M. / Kunz, R. R. / Ehrlich, D. J. / Shaver, D. C. et al. | 1990
- 1481
-
Gas phase silylation in the diffusion enhanced silylated resist process for application to sub‐0.5 μm optical lithographyBaik, Ki‐Ho / Van den hove, L. / Goethals, A. M. / Op de Beeck, M. / Roland, B. et al. | 1990
- 1481
-
Gas phase silylation in the diffusion enhanced silylated resist process for application to sub-0.5 mu m optical lithographyKi-Ho Baik / Van den Hove, L. / Goethals, A.M. / Op de Beeck, M. / Roland, B. et al. | 1990
- 1488
-
The silylation processes for positive and negative deep ultraviolet resistsSviridov, S. M. / Timerov, M. R. / Valiev, K. A. / Velikov, L. V. / Zaroslov, D. Yu. et al. | 1990
- 1493
-
Plasma‐deposited organosilicon thin films as dry resists for deep ultraviolet lithographyHorn, M. W. / Pang, S. W. / Rothschild, M. et al. | 1990
- 1497
-
Silylated acid hardened resist process: A deep ultraviolet surface imaging techniquePavelchek, Edward K. / Bohland, John F. / Thackeray, James W. / Orsula, George W. / Jones, Susan K. / Dudley, Bruce W. / Bobbio, Stephen M. / Freeman, Peter W. et al. | 1990
- 1502
-
Application of Plasmask R resist and the DESIRE process to lithography at 248 nmHutton, Richard S. / Kostelak, Robert L. / Nalamasu, Omkaram / Kornblit, Avi / McNevin, Susan / Taylor, Gary N. et al. | 1990
- 1509
-
Reduction imaging at 14 nm using multilayer‐coated optics: Printing of features smaller than 0.1 μmBjorkholm, J. E. / Bokor, J. / Eichner, L. / Freeman, R. R. / Gregus, J. / Jewell, T. E. / Mansfield, W. M. / Mac Dowell, A. A. / Raab, E. L. / Silfvast, W. T. et al. | 1990
- 1514
-
Development of centrally controlled synchrotron radiation lithography beamline systemNishino, J. / Kawakami, M. / Yanagisawa, T. / Okada, K. et al. | 1990
- 1519
-
Reflective systems design study for soft x‐ray projection lithographyJewell, Tanya E. / Rodgers, J. Michael / Thompson, Kevin P. et al. | 1990
- 1524
-
The first x‐ray lithography beamline at Hefei National Synchrotron Radiation LaboratoryQian, Shinan / Li, Guihe / Liu, Zewen / Chen, Qianhong / Jiang, Dikui / Liu, Wanpo / Kan, Ya / Su, Yonggang et al. | 1990
- 1529
-
Absolute flux measurements for x‐ray lithography beamlinesBaszler, F. / Hansen, M. / Cerrina, F. et al. | 1990
- 1535
-
Novel process using x‐ray lithography for T‐shaped gate patternsYoshioka, Nobuyuki / Fujino, Takeshi / Morimoto, Hiroaki / Watakabe, Yaichiro / Abe, Haruhiko et al. | 1990
- 1539
-
A new perspective on proximity printing: From ultraviolet to x rayLin, B. J. et al. | 1990
- 1547
-
Sensitivity/resolution variables in x‐ray chemically amplified resists exposed to synchrotron radiationTaylor, J. W. / Babcock, C. P. / Mancini, D. C. / Plumb, D. / Olsen, R. J. / Fedynyshyn, T. et al. | 1990
- 1551
-
Aerial image formation in synchrotron‐radiation‐based x‐ray lithography: The whole pictureGuo, J. Z. Y. / Chen, G. / White, V. / Anderson, P. / Cerrina, F. et al. | 1990
- 1557
-
X‐ray mask repair with focused ion beamsWagner, A. / Levin, J. P. / Mauer, J. L. / Blauner, P. G. / Kirch, S. J. / Longo, P. et al. | 1990
- 1565
-
A 100‐nm patterned x‐ray mask technology based on amorphous SiC membranesHaghiri‐Gosnet, A. M. / Rousseaux, F. / Kebabi, B. / Ladan, F. R. / Mayeux, C. / Madouri, A. / Decanini, D. / Bourneix, J. / Carcenac, F. / Launois, H. et al. | 1990
- 1570
-
Mechanical distortions of support frames for x‐ray lithography masksLenius, P. / Engelstad, R. / Palmer, S. / Brodsky, E. / Cerrina, F. et al. | 1990
- 1575
-
Radiation stability of SiC and diamond membranes as potential x‐ray lithography mask carriersWells, G. M. / Palmer, S. / Cerrina, F. / Purdes, A. / Gnade, B. et al. | 1990
- 1579
-
Optical properties of x‐ray lithography masksVladimirsky, Y. / Maldonado, J. R. / Vladimirsky, O. / Starikov, A. / Fuentes, R. / Guarnieri, D. / Whitehair, S. W. / Cuomo, J. et al. | 1990
- 1584
-
Distortion measurement of embedded absorber (silicon membrane) and conventional (diamond membrane) x‐ray masksMaluf, Nadim I. / Pease, R. Fabian W. / Windischmann, Henry et al. | 1990
- 1589
-
Electrodeposition of low stress gold for x‐ray maskChiu, Shih‐Liang / Acosta, R. E. et al. | 1990
- 1595
-
Contrast amplification of very high resolution x‐ray masksWhite, V. / Wallace, J. / Cerrina, F. / Vladimirski, Y. / Su, Y. / Maldonado, J. et al. | 1990
- 1600
-
Investigation of process latitude for quality improvement in x‐ray lithography mask fabricationTrube, J. / Chlebek, J. / Grimm, J. / Huber, H.‐L. / Löchel, B. / Stauch, H. et al. | 1990
- 1604
-
Fabrication and testing of 0.1‐μm‐linewidth microgap x‐ray masksSchattenburg, M. L. / Early, K. / Ku, Y.‐C. / Chu, W. / Shepard, M. I. / The, S.‐C. / Smith, Henry I. / Peters, D. W. / Frankel, R. D. / Kelly, D. R. et al. | 1990
- 1609
-
Printability of x‐ray mask defects at various printing conditions and critical dimensionsKluwe, A. / Lutzke, H. / Stelter, Th. / Müller, K.‐H. et al. | 1990
- 1614
-
Experimental determination of the proximity effect from 25 to 100 keV in electron beam patterned x‐ray masksUmbach, C. P. / Broers, A. N. et al. | 1990
- 1618
-
X‐ray mask fogging by electrons backscattered beneath the membrane*Christenson, K. K. / Viswanathan, R. G. / Hohn, F. J. et al. | 1990
- 1624
-
Calibration and characterization of a pulsed soft x‐ray sourcePeters, Darryl W. / Dardzinski, Bernard J. / Kelly, Dan R. et al. | 1990
- 1628
-
Commissioning of aurora: The smallest synchrotron light sourceYamada, H. et al. | 1990
- 1633
-
High‐performance synchrotron orbital radiation x‐ray stepperKoga, K. / Nomura, N. / Yasui, J. / Terui, Y. / Nagano, H. / Fujita, K. / Kusumoto, S. / Nakano, K. / Nakatani, S. / Mizuguchi, S. et al. | 1990
- 1638
-
Degradation behavior of 0.5- mu m p-channel metal-oxide-semiconductor transistors fabricated by means of X-ray and optical lithographyFriedrich, D. / Bernt, H. / Schmidt, L. / Windbracke, W. et al. | 1990
- 1638
-
Degradation behavior of 0.5‐μm p‐channel metal–oxide–semiconductor transistors fabricated by means of x‐ray and optical lithographyFriedrich, D. / Bernt, H. / Schmidt, L. / Windbracke, W. et al. | 1990
- 1643
-
Extreme ultraviolet resist and mirror characterization: Studies with a laser plasma sourceKubiak, Glenn D. / Outka, Duane A. / Rohlfing, Celeste M. / Zeigler, John M. / Windt, David L. / Waskiewicz, Warren K. et al. | 1990
- 1648
-
A compact, low‐cost system for sub‐100 nm x‐ray lithographyMoel, A. / Schattenburg, M. L. / Carter, J. M. / Smith, Henry I. et al. | 1990
- 1652
-
Scanning optical microscopyKino, G. S. et al. | 1990
- 1652
-
Scanning optical microscopy (IC technology)Kino, G.S. et al. | 1990
- 1657
-
Numerical modeling of electron and ion optics on personal computersMunro, Eric et al. | 1990
- 1666
-
Electron beam blanker opticsGesley, Mark / Condran, Pat et al. | 1990
- 1673
-
Design of a high‐current‐density focused‐ion‐beam optical system with the aid of a chromatic aberration formulaKawanami, Yoshimi / Ohnishi, Tsuyoshi / Ishitani, Tohru et al. | 1990
- 1676
-
Asymmetry aberrations and tolerancing of complete systems of electron lenses and deflectors*Liu, Haoning / Zhu, Xieqing / Munro, Eric et al. | 1990
- 1682
-
Optimization of variable axis immersion lens for resolution and normal landingSturans, M. A. / Petric, P. F. / Pfeiffer, H. C. / Stickel, W. / Gordon, M. S. et al. | 1990
- 1686
-
Scanning tunneling microscope microlens with magnetic focusingHordon, L. S. / Pease, R. F. W. et al. | 1990
- 1691
-
An electron beam line probe with variable aspect ratioBrodie, A. D. et al. | 1990
- 1698
-
Microminiaturization of electron optical systemsChang, T. H. P. / Kern, D. P. / Muray, L. P. et al. | 1990
- 1706
-
Achromatic quadrupole focusing systems for use with liquid metal ion sourcesHarriott, L. R. / Brown, W. L. / Barr, D. L. et al. | 1990
- 1711
-
A modeling approach to charging in e‐beam columnsLangner, G. et al. | 1990
- 1716
-
Integrated silicon grid ion extraction system for O2 processesKorzec, D. / Engemann, J. / Bansky, J. / Keller, H. M. et al. | 1990
- 1721
-
Design of a high resolution focused ion beam system using liquid metal ion sourceZhou, Li / Orloff, Jon et al. | 1990
- 1725
-
Integrating diffusion enhanced silylated resist into a single‐layer resist dynamic random access memory production lineGarza, Cesar M. / Catlett, David L. / Jackson, Ricky A. et al. | 1990
- 1731
-
A direct approach to the modeling of polydihexylsilane as a contrast enhancement materialLoong, Wen‐an / Pan, Hong‐tsz et al. | 1990
- 1735
-
An investigation of some depth of focus issues in high numerical aperture projection lithography system by experiment and simulationSpence, C. A. / Ferguson, R. A. / Yeung, M. / Das, S. / Hutchinson, J. M. / Neureuther, A. R. et al. | 1990
- 1740
-
Applying deep ultraviolet lithographyTipton, Mike / Misium, George / Garza, Cesar / Eguchi, Mitsuru et al. | 1990
- 1745
-
Subhalf‐micron patterning of negative working resist by using new phase‐shifting masksJinbo, Hideyuki / Yamashita, Yoshio / Sadamura, Masao et al. | 1990
- 1749
-
Surface imaging lithography at 248 nmMisium, George R. / Tipton, Mike / Garza, Cesar M. et al. | 1990
- 1754
-
Lithography with a 50 KV e beam and a vacuum scanning tunneling microscope in a polydiacetylene negative resistDobisz, E. A. / Marrian, C. R. K. / Colton, R. J. et al. | 1990
- 1759
-
Experimental performance of a large‐diameter multipolar microwave plasma disk reactorSze, F. C. / Reinhard, D. K. / Musson, B. / Asmussen, J. / Dahimene, M. et al. | 1990
- 1763
-
A study of proximity effects at high electron‐beam voltages for x‐ray mask fabrication. I. Additive mask processesRosenfield, M. G. / Rishton, S. A. / Kern, D. P. / Seeger, D. E. / Whiting, C. A. et al. | 1990
- 1771
-
Electron beam irradiation effects for high‐Tc superconducting thin filmsMatsui, S. / Ichihashi, T. / Yoshitake, T. / Miura, S. / Satoh, T. / Mito, M. et al. | 1990
- 1775
-
Proximity effect correction at 10 keV using ghost and sizing for 0.4 μm mask lithographyMuray, Andrew / Lozes, Richard L. / Milner, Kathy / Hughes, Greg et al. | 1990
- 1775
-
Proximity effect correction at 10 KeV using GHOST and sizing for 0.4 mu m mask lithographyMuray, A. / Lozes, R.L. / Milner, K. / Hughes, G. et al. | 1990
- 1780
-
Process margins for pulsed laser‐induced via fillingMarella, Paul F. / Tuckerman, David B. / Pease, R. Fabian et al. | 1990
- 1786
-
A study of deposited charge from electron beam lithographyCummings, K. D. et al. | 1990
- 1789
-
Laser application in packaging of very large scale integrated chips*Jee, Yong / Woodard, Ollie C. et al. | 1990
- 1794
-
Fabrication of GaAs/GaAlAs quantum wires with side gatesWakaya, Fujio / Kakuta, Takeshi / Takagaki, Yukihiko / Yuba, Yoshihiko / Takaoka, Sadao / Murase, Kazuo / Shiokawa, Takao / Gamo, Kenji / Namba, Susumu et al. | 1990
- 1798
-
A simple model of the chemically assisted ion beam etching yield of GaAs with Cl2 at medium current densitiesDavis, Robert J. / Wolf, Edward D. et al. | 1990
- 1804
-
Synchrotron radiation induced chemical vapor deposition of thin films from metal hexacarbonyls*Mancini, Derrick C. / Varma, Shikha / Simons, John K. / Rosenberg, Richard A. / Dowben, P. A. et al. | 1990
- 1808
-
The surface silylating process using chemical amplification resist for electron beam lithographyFujino, T. / Takeuchi, S. / Morimoto, H. / Watakabe, Y. / Abe, H. / Koshiba, M. / Murata, M. / Kawamura, S. et al. | 1990
- 1814
-
Parametric modeling of focused ion beam induced etchingGandhi, Anil / Orloff, Jon et al. | 1990
- 1820
-
Polysilyne thin films as resists for deep ultraviolet lithographyKunz, R. R. / Horn, M. W. / Goodman, R. B. / Bianconi, P. A. / Smith, D. A. / Freed, C. A. et al. | 1990
- 1826
-
Focused ion beam induced deposition of platinumTao, Tao / Ro, JaeSang / Melngailis, John / Xue, Ziling / Kaesz, Herbert D. et al. | 1990
- 1830
-
Electron beam induced modification of GaAs surfaces for maskless thermal Cl2 etchingClausen, E. M. / Harbison, J. P. / Chang, C. C. / Craighead, H. G. / Florez, L. T. et al. | 1990
- 1836
-
Electron‐beam cell projection lithography: A new high‐throughput electron‐beam direct‐writing technology using a specially tailored Si apertureNakayama, Y. / Okazaki, S. / Saitou, N. / Wakabayashi, H. et al. | 1990
- 1841
-
A theoretical comparison of the data‐acquisition time characteristics of the time of flight voltage contrast detector with retarding field detectorsKhursheed, A. / Dinnis, A. R. et al. | 1990
- 1848
-
Performance of a combined focused ion and electron beam systemSawaragi, H. / Mimura, R. / Kasahara, H. / Aihara, R. / Thompson, W. / Shearer, M. Hassel et al. | 1990
- 1853
-
Electron emission properties of laser pulsed GaAs negative electron affinity photocathodesSanford, Colin A. / MacDonald, Noel C. et al. | 1990
- 1858
-
Modifying a JEOL 100B for electron‐beam lithographyAndrews, C. C. / Kirk, W. P. et al. | 1990
- 1863
-
Reduction in beam positioning error by modification of dynamic responses in electron beam direct writing systemMatsukura, Hiroyuki / Tsutaoka, Takanori / Nakajima, Ken et al. | 1990
- 1867
-
Energy density function determination in very‐high‐resolution electron‐beam lithographyGentili, M. / Grella, L. / Lucchesini, A. / Luciani, L. / Mastrogiacomo, L. / Musumeci, P. et al. | 1990
- 1872
-
The effect of resist contrast on linewidth error induced by e‐beam proximity exposureLiu, Hua‐Yu / Owen, Geraint et al. | 1990
- 1877
-
A high accuracy and high throughput electron beam reticle writing system for 16M dynamic random access memory class and beyond devicesTakigawa, T. / Ogawa, Y. / Yoshikawa, R. / Koyama, K. / Tamamushi, S. / Ikenaga, O. / Abe, T. / Hattori, K. / Nishimura, E. / Kusakabe, H. et al. | 1990
- 1877
-
A high accuracy and high throughput electron beam reticle writing system for 16M dynamic random access memory class and beyond beyond devicesTakigawa, T. / Ogawa, Y. / Yoshikawa, R. / Koyama, K. / Tamamushi, S. / Ikenaga, O. / Abe, T. / Hattori, K. / Nishimura, E. / Kusakabe, H. et al. | 1990
- 1882
-
An error measure for dose correction in e‐beam nanolithographyPati, Y. C. / Teolis, A. / Park, D. / Bass, R. / Rhee, K. / Bradie, B. / Peckerar, M. C. et al. | 1990
- 1889
-
Methods for proximity effect correction in electron lithographyOwen, Geraint et al. | 1990
- 1893
-
Charging effects on trilevel resist with an e‐beam lithography systemItoh, Hiroyuki / Nakamura, Kazumitsu / Hayakawa, Hajime et al. | 1990
- 1898
-
Resist heating effects in 25 and 50 kV e‐beam lithography on glass masksKratschmer, E. / Groves, T. R. et al. | 1990
- 1903
-
An advanced electron beam lithography system for sub‐half‐micron ultra‐large‐scale production: The distortion corrector technologyNakamura, K. / Okino, T. / Nakanoda, S. / Kawamura, I. / Goto, N. / Nakagawa, Y. / Thompson, W. / Shearer, M. Hassel et al. | 1990
- 1909
-
Quantitative lithographic performance of proximity correction for electron beam lithographyBojko, R. J. / Hughes, B. J. et al. | 1990
- 1914
-
Electron beam/optical intralevel mix‐and‐match lithography for deep submicron device fabricationMatsuda, Tadahito / Iwadate, Kazumi / Tanaka, Akinobu / Kawai, Yoshio / Komatsu, Kazuhiko et al. | 1990
- 1919
-
Double 15‐nm‐wide metal gates 10 nm apart and 70 nm thick on GaAsChou, Stephen Y. / Fischer, Paul B. et al. | 1990
- 1923
-
Stochastic effects occurring after ion emission from liquid metal ion sourcesWard, J. W. / Kubena, R. L. et al. | 1990
- 1927
-
Ion beam assisted etching and depositionGamo, Kenji / Namba, Susumu et al. | 1990
- 1932
-
The angular dependence of the emission characteristics for a Pd2As liquid‐alloy ion sourceRao, S. / Bell, A. E. / Schwind, G. A. / Swanson, L. W. et al. | 1990
- 1937
-
Ultrashallow Si p+–n junction fabrication by low energy Ga+ focused ion beam implantationSteckl, A. J. / Mogul, H. C. / Mogren, S. M. et al. | 1990
- 1941
-
Low distortion, large area ion beam proximity printing for GaAs field effect transistors and monolithic microwave integrated circuitsSen, Sudipto / Stumbo, D. P. / Fong, F‐O. / Damm, G. A. / Engler, D. W. / Wolfe, J. C. / Randall, John N. et al. | 1990
- 1945
-
Focused ion beam machining of Si, GaAs, and InPPellerin, J. G. / Griffis, D. P. / Russell, P. E. et al. | 1990
- 1951
-
Chlorine and HCl radical beam etching of III–V semiconductorsLishan, David G. / Hu, Evelyn L. et al. | 1990
- 1956
-
Characterization of GaAs/AlxGa1−xAs selective reactive ion etching in SiCl4/SiF4 plasmasGuggina, W. H. / Ketterson, A. A. / Andideh, E. / Hughes, J. / Adesida, I. / Caracci, S. / Kolodzey, J. et al. | 1990
- 1960
-
Assessing thermal Cl2 etching and regrowth as methods for surface passivationClausen, E. M. / Harbison, J. P. / Florez, L. T. / Van der Gaag, B. et al. | 1990
- 1966
-
An investigation of CH4/H2 reactive etching damage to thin heavily doped GaAs metal-semiconductor field effect transistor layers during gate recessingCameron, N.I. / Beaumont, S.P. / Wilkinson, C.D.W. / Johnson, N.P. / Kean, A.H. / Stanley, C.R. et al. | 1990
- 1966
-
An investigation of CH4/H2 reactive ion etching damage to thin heavily doped GaAs metal–semiconductor field effect transistor layers during gate recessingCameron, N. I. / Beaumont, S. P. / Wilkinson, C. D. W. / Johnson, N. P. / Kean, A. H. / Stanley, C. R. et al. | 1990
- 1970
-
High resolution germanium zone plates and apertures for soft x‐ray focalometryTennant, D. M. / Raab, E. L. / Becker, M. M. / O’Malley, M. L. / Bjorkholm, J. E. / Epworth, R. W. et al. | 1990
- 1975
-
Free standing silicon microstructures for soft x‐ray masks and cold atom focusingTennant, D. M. / Bjorkholm, J. E. / O’Malley, M. L. / Becker, M. M. / Gregus, J. A. / Epworth, R. W. et al. | 1990
- 1980
-
Plasma‐deposited amorphous carbon films as planarization layersPang, S. W. / Horn, M. W. et al. | 1990
- 1985
-
The role of heat transfer during reactive‐ion etching of polymer filmsDems, B. C. / Rodriguez, F. et al. | 1990
- 1990
-
Reactive ion etching of indium compounds using iodine containing plasmasFlanders, D. C. / Pressman, L. D. / Pinelli, G. et al. | 1990
- 1994
-
Automatic mark detection in electron beam nanolithography using digital image processing and correlationBoegli, V. / Kern, D. P. et al. | 1990
- 2002
-
X‐ray stepper exposure system performance and statusFlamholz, Alex / Rippstein, Robert et al. | 1990
- 2008
-
Alignment for masked ion beam lithography using ion‐induced fluorescenceStumbo, D. P. / Sen, Sudipto / Fong, F‐O. / Damm, G. A. / Engler, D. W. / Wolfe, J. C. / Randall, John N. et al. | 1990
- 2012
-
The effect of process coatings on the alignment signal in a proximity lithography systemChen, G. / Wallace, J. / Palmer, S. / Cerrina, F. / Randall, J. et al. | 1990
- 2017
-
A new precise optical autofocus systemFein, Michael E. / Kelderman, Herman F. / Neukermans, Armand P. / Loh, Alan E. / Wolze, David et al. | 1990
- 2023
-
A scanning tunneling microscope with a capacitance‐based position monitorGriffith, J. E. / Miller, G. L. / Green, C. A. / Grigg, D. A. / Russell, P. E. et al. | 1990
- 2028
-
Error component analysis in the metrology of x‐ray masksFoss, Gordon O. et al. | 1990
- 2032
-
An analysis of polarization mixing errors in distance measuring interferometersAugustyn, Walter / Davis, Paul et al. | 1990
- 2037
-
Electron beam testing of integrated circuits with multilevel metalRadzimski, Z. J. / Ricks, D. A. / Wolcott, J. S. / Russell, P. E. et al. | 1990
- 2041
-
Testing integrated circuit microstructures using charging‐induced voltage contrastAton, T. J. / Mahant‐Shetti, S. S. / Gale, R. J. / Bennett‐Lilley, M. H. / Harward, M. G. / Pico, C. A. / Weaver, T. L. et al. | 1990
- 2045
-
Design and application of an e‐beam test system for micropackaging boardsSchmid, R. / Brunner, M. / Schmitt, R. / Lischke, B. / Bergh, N. Then / Wörner, M. et al. | 1990
- 2048
-
High repetition rate electron beam chopping system for electron beam testing at microwave frequenciesThong, J. T. L. / Breton, B. C. / Nixon, W. C. et al. | 1990
- 2053
-
Optical column design for large area voltage contrast electron beam testing of multichip packaging substratesGoruganthu, R. R. / Bahasadri, A. / Kumar, N. / Woodard, O. C. et al. | 1990