Effect of beryllium concentration on the size of self-assembled CdSe quantum dots grown on by molecular-beam epitaxy (English)
- New search for: Zhou, X.
- New search for: Tamargo, Maria C.
- New search for: Muñoz, Martin
- New search for: Liu, H.
- New search for: Couzis, A.
- New search for: Maldarelli, C.
- New search for: Huang, Y. S.
- New search for: Malikova, L.
- New search for: Zhou, X.
- New search for: Tamargo, Maria C.
- New search for: Muñoz, Martin
- New search for: Liu, H.
- New search for: Couzis, A.
- New search for: Maldarelli, C.
- New search for: Huang, Y. S.
- New search for: Malikova, L.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
23
, 3
;
1212-1216
;
2005
- Article (Journal) / Electronic Resource
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Title:Effect of beryllium concentration on the size of self-assembled CdSe quantum dots grown on by molecular-beam epitaxy
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Additional title:Effect of beryllium concentration on the size of CdSe
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Contributors:Zhou, X. ( author ) / Tamargo, Maria C. ( author ) / Muñoz, Martin ( author ) / Liu, H. ( author ) / Couzis, A. ( author ) / Maldarelli, C. ( author ) / Huang, Y. S. ( author ) / Malikova, L. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:2005-05-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 23, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 877
-
Nanofabrication by scanning probe microscope lithography: A reviewTseng, Ampere A. / Notargiacomo, Andrea / Chen, T. P. et al. | 2005
- 895
-
Effect of thermal annealing on -T-shaped--gate high electron mobility transistorsYamashita, Yoshimi / Endoh, Akira / Ikeda, Keiji / Hikosaka, Kohki / Mimura, Takashi / Higashiwaki, Masataka / Matsui, Toshiaki / Hiyamizu, Satoshi et al. | 2005
- 900
-
Etching silicon-containing bilayer resists in ammonia-based plasmasPanda, Siddhartha / Wise, Richard / Mahorowala, Arpan / Balasubramanium, Vaidya / Sugiyama, Kenro et al. | 2005
- 908
-
Thin-film transformations and volatile products in the formation of nanoporous low- polymethylsilsesquioxane-based dielectricLazzeri, P. / Vanzetti, L. / Anderle, M. / Bersani, M. / Park, J. J. / Lin, Z. / Briber, R. M. / Rubloff, G. W. / Kim, H. C. / Miller, R. D. et al. | 2005
- 918
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Imaging patterns of intensity in topographically directed photolithographyPaul, Kateri E. / Breen, Tricia L. / Hadzik, Tanja / Whitesides, George M. / Smith, Stephen P. / Prentiss, Mara et al. | 2005
- 926
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Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayerPark, D. S. / Kang, S. J. / Kim, H. J. / Jang, M. H. / Noh, M. / Yoo, K.-H. / Whang, C. N. / Lee, Y. S. / Lee, M. H. et al. | 2005
- 930
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Nitrogen-incorporated multiwalled carbon nanotubes grown by direct current plasma-enhanced chemical vapor depositionYang, Ji Hoon / Kim, Bub Jin / Kim, Yun Hee / Lee, Young Jin / Ha, Byung Ho / Shin, Yong Sook / Park, Serng-Yerl / Kim, Hyun Suk / Park, Chong-Yun / Yang, Chul Woong et al. | 2005
- 934
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Fabrication of two- and three-dimensional photonic crystals of titania with submicrometer resolution by deep x-ray lithographyAwazu, Koichi / Wang, Xiaomin / Fujimaki, Makoto / Kuriyama, Taketo / Sai, Akihide / Ohki, Yoshimichi / Imai, Hiroaki et al. | 2005
- 940
-
Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffractionToh, Suey Li / Loh, K. P. / Boothroyd, C. B. / Li, K. / Ang, C. H. / Chan, L. et al. | 2005
- 947
-
Direct deposition of aligned nanorod array onto cylindrical objectsFan, J.-G. / Zhao, Y.-P. et al. | 2005
- 954
-
Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructuresNee, Tzer-En / Wu, Ya-Fen / Lin, Ray-Ming et al. | 2005
- 959
-
Ion beam sputter deposition of soft x-ray multilayer mirrorsSchubert, E. / Frost, F. / Ziberi, B. / Wagner, G. / Neumann, H. / Rauschenbach, B. et al. | 2005
- 966
-
Cross sections for the investigation of the electroluminescence excitation of quantum wells in blue light-emitting diodes with multiquantum barriersNee, Tzer-En / Wang, Jen-Cheng / Lin, Chung-Han / Lin, Ray-Ming / Huang, Ching-An / Fang, Bor-Ren / Wang, Ruey-Yu et al. | 2005
- 970
-
Millisecond microwave annealing: Driving microelectronics nanoThompson, Keith / Booske, J. H. / Ives, R. L. / Lohr, J. / Gorelov, Yurii / Kajiwara, Ken et al. | 2005
- 979
-
Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer depositionFuruya, Akira / Tsuda, Hiroshi / Ogawa, Shinichi et al. | 2005
- 984
-
Fabrication and characterization of slanted nanopillars arrayFu, Yongqi / Ann Bryan, Ngoi Kok et al. | 2005
- 990
-
Enhancement of He-induced cavities in silicon by hydrogen plasma treatmentLiu, C. L. / Ntsoenzok, E. / Vengurlekar, A. / Ashok, S. / Alquier, D. / Ruault, M. O. / Dubois, C. et al. | 2005
- 995
-
Micro∕nanotribological study of perfluorosilane SAMs for antistiction and low wearKasai, Toshi / Bhushan, Bharat / Kulik, Gerit / Barbieri, Laura / Hoffmann, Patrik et al. | 2005
- 1004
-
Photoreflectance characterization of double-heterojunction bipolar transistor epitaxial wafersSugiyama, Hiroki / Oda, Yasuhiro / Kobayashi, Takashi / Uchida, Masahiro / Watanabe, Noriyuki et al. | 2005
- 1010
-
High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layerBalakrishnan, G. / Huang, S. / Khoshakhlagh, A. / Dawson, L. R. / Xin, Y.-C. / Conlin, P. / Huffaker, D. L. et al. | 2005
- 1013
-
Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layerLee, Jeong-Soo / Chandrashekar, Anand / Park, Bong Mo / Overzet, Lawrence J. / Lee, G. S. et al. | 2005
- 1018
-
Chemisorption of on the surface at room temperatureCheng, C.-P. / Pi, T.-W. / Ouyang, C.-P. / Wen, J.-F. et al. | 2005
- 1018
-
Chemisorption of C60 on the Si(001)-2x1 surface at room temperatureCheng, C.P. / Pi, T.W. / Ouyang, C.P. / Wen, J.F. et al. | 2005
- 1024
-
Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser depositionKao, C. J. / Kwon, Yong Wook / Heo, Y. W. / Norton, D. P. / Pearton, S. J. / Ren, F. / Chi, G. C. et al. | 2005
- 1029
-
Effect of cerium concentration on the structural and ferroelectric properties of thin films for ferroelectric random access memoriesOh, Young-Nam / Yoon, Soon-Gil et al. | 2005
- 1032
-
Integrated field effect transistors for microelectromechanical systems applications, modeling, and resultsYoung, Ralph W. / Draper, Bruce L. et al. | 2005
- 1036
-
Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of gate MOSFET for high density DRAM applicationsLim, Kwan-Yong / Cho, Heung-Jae / Jang, Se-Aug / Kim, Yong Soo / Oh, Jae-Geun / Lee, Jung-Ho / Yang, Hong-Seon / Sohn, Hyun-Chul / Kim, Jin-Woong et al. | 2005
- 1041
-
Nanostructured carbon-metal composite filmsNarayan, Roger J. / Scholvin, Dirk et al. | 2005
- 1047
-
Growth and characterization of Si-doped self-assembled InAs quantum dotsNah, Jongbum et al. | 2005
- 1050
-
Implementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixingNie, D. / Mei, T. / Djie, H. S. / Chin, M. K. / Tang, X. H. / Wang, Y. X. et al. | 2005
- 1054
-
Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxyWicaksono, S. / Yoon, S. F. / Tan, K. H. / Loke, W. K. et al. | 2005
- 1060
-
Self-terminated oxide polish technique for the waveguide ridge laser diode fabricationPeng, Te-Chin / Yang, Chih-Chao / Huang, Yun-Hsun / Wu, Meng-Chyi / Ho, Chong-Lung / Ho, Wen-Jeng et al. | 2005
- 1064
-
Improved high temperature growth of GaInNAsSb by molecular beam epitaxyMaranowski, K. D. / Smith, J. M. / Fanning, T. R. / Jewell, J. L. et al. | 2005
- 1068
-
Lateral templating of self-organized ripple morphologies during focused ion beam milling of GeIchim, Stefan / Aziz, Michael J. et al. | 2005
- 1072
-
Low resistance ohmic contact to -type GaN using multilayer schemeBae, J. W. / Hossain, T. / Adesida, I. / Bogart, K. H. / Koleske, D. / Allerman, A. A. / Jang, J. H. et al. | 2005
- 1076
-
Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor depositionTakagi, S. / Onoue, S. / Iyanagi, K. / Nishitani, K. / Shinmura, T. et al. | 2005
- 1084
-
Electron emission from boron nitride films deposited on patterned GaAs substratesa)Shima, Hidekazu / Funakawa, Shingo / Kimura, Chiharu / Sugino, Takashi et al. | 2005
- 1088
-
Technology of polycrystalline diamond thin films for microsystems applicationsTang, Yuxing / Aslam, Dean M. et al. | 2005
- 1096
-
Effect of a surface inhibition layer on line edge roughnessa)Ma, Yuansheng / Cerrina, Franco et al. | 2005
- 1102
-
Effect of imprinting pressure on residual layer thickness in ultraviolet nanoimprint lithographyLee, Heon et al. | 2005
- 1107
-
Technique for site-specific plan-view transmission electron microscopy of nanostructural electronic devicesBassim, N. D. / Twigg, M. E. et al. | 2005
- 1119
-
Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasersCanedy, C. L. / Bewley, W. W. / Boishin, G. I. / Kim, C. S. / Vurgaftman, I. / Kim, M. / Meyer, J. R. / Whitman, L. J. et al. | 2005
- 1125
-
Growth of high optical quality quantum dots in double heterostructuresZhang, Z. H. / Cheng, K. Y. et al. | 2005
- 1129
-
High-performance 30-period quantum-dot infrared photodetectorChou, Shu-Ting / Lin, Shih-Yen / Hsiao, Ru-Shang / Chi, Jim-Yong / Wang, Jyh-Shyang / Wu, Meng-Chyi / Chen, Jenn-Fang et al. | 2005
- 1132
-
Uniformly doped quantum-dot infrared photodetector structuresPal, D. / Towe, E. et al. | 2005
- 1136
-
Midinfrared “W” diode lasers with digitally grown tensile-strained AlGaAsSb barriersLi, W. / Héroux, J. B. / Shao, H. / Wang, W. I. / Vurgaftman, I. / Meyer, J. R. et al. | 2005
- 1140
-
Regrown-emitter InP heterojunction bisucpolar transistorsKadow, C. / Gossard, A. C. / Rodwell, M. J. W. et al. | 2005
- 1144
-
Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectorsSullivan, G. J. / Ikhlassi, A. / Bergman, J. / DeWames, R. E. / Waldrop, J. R. / Grein, C. / Flatté, M. / Mahalingam, K. / Yang, H. / Zhong, M. et al. | 2005
- 1149
-
Optical properties of superlatticesChoi, S. G. / Srivastava, S. K. / Palmstrøm, C. J. / Kim, Y. D. / Cooper, S. L. / Aspnes, D. E. et al. | 2005
- 1154
-
Interface roughness characterization by electron mobility of pseudomorphic modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxyKatoh, S. / Sagisaka, H. / Yamamoto, M. / Watanabe, I. / Kitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 2005
- 1158
-
Much improved flat interfaces of quantum well structures grown on InP substrates by molecular-beam epitaxya)Imura, M. / Kurohara, H. / Masui, Y. / Asano, T. / Kitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 2005
- 1162
-
Molecular beam epitaxial growth of planar superlattice structures on vicinal GaAs and their transport propertiesAkiyama, Y. / Kawazu, T. / Noda, T. / Koshiba, S. / Torii, K. / Sakaki, H. et al. | 2005
- 1166
-
Enhanced strain relaxation rate of InGaAs by adatom-assisted dislocation kink nucleationLynch, C. / Chason, E. / Beresford, R. et al. | 2005
- 1171
-
Effect of micro-twin defects on InSb quantum wellsMishima, T. D. / Keay, J. C. / Goel, N. / Ball, M. A. / Chung, S. J. / Johnson, M. B. / Santos, M. B. et al. | 2005
- 1174
-
Recent developments in surface studies of andFeenstra, R. M. / Dong, Y. / Lee, C. D. / Northrup, J. E. et al. | 2005
- 1181
-
Impact of unintentional and intentional nitridation of the substrate on GaN epitaxyKim, Tong-Ho / Choi, Soojeong / Morse, Mike / Wu, Pae / Yi, Changhyun / Brown, April / Losurdo, Maria / Giangregorio, Maria M. / Bruno, Giovanni et al. | 2005
- 1186
-
Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitridesWicks, G. W. / Koch, M. W. / Pedrazzani, J. R. et al. | 2005
- 1190
-
Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substratesStorm, D. F. / Katzer, D. S. / Mittereder, J. A. / Binari, S. C. / Shanabrook, B. V. / Zhou, Lin / Smith, David J. / Xu, X. / McVey, D. / Vaudo, R. P. et al. | 2005
- 1194
-
Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvatureTorabi, A. / Hoke, W. E. / Mosca, J. J. / Siddiqui, J. J. / Hallock, R. B. / Kennedy, T. D. et al. | 2005
- 1199
-
Ammonia molecular beam epitaxy growth of -type GaN and application to bipolar junction transistorsHaffouz, S. / Tang, H. / Bardwell, J. A. / Rolfe, S. / Hsu, E. M. / Sproule, I. / Moisa, S. / Beaulieu, M. / Webb, J. B. et al. | 2005
- 1204
-
Molecular beam epitaxy of heterostructures for high electron mobility transistorsKatzer, D. S. / Storm, D. F. / Binari, S. C. / Shanabrook, B. V. / Torabi, A. / Zhou, Lin / Smith, David J. et al. | 2005
- 1209
-
Optical characterization and evaluation of the conduction band offset for quantum wells grown on InP(001) by molecular-beam epitaxySohel, Mohammad / Zhou, Xuecong / Lu, Hong / Perez-Paz, M. Noemi / Tamargo, Maria / Muñoz, Martin et al. | 2005
- 1212
-
Effect of beryllium concentration on the size of self-assembled CdSe quantum dots grown on by molecular-beam epitaxyZhou, X. / Tamargo, Maria C. / Muñoz, Martin / Liu, H. / Couzis, A. / Maldarelli, C. / Huang, Y. S. / Malikova, L. et al. | 2005
- 1217
-
Self-assembled quantum-dot molecules by molecular-beam epitaxySuraprapapich, S. / Thainoi, S. / Kanjanachuchai, S. / Panyakeow, S. et al. | 2005
- 1221
-
In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAsYakimov, Michael / Tokranov, Vadim / Agnello, Gabriel / van Eisden, Jobert / Oktyabrsky, Serge et al. | 2005
- 1226
-
GaAs buffer layer morphology and lateral distributions of InGaAs quantum dotsRoshko, A. / Harvey, T. E. / Lehman, S. Y. / Mirin, R. P. / Bertness, K. A. / Hyland, B. L. et al. | 2005
- 1232
-
Site-controlled InAs quantum dots on GaAs patterned using self-organized nano-channel alumina templateMeneou, K. / Tsai, C. L. / Zhang, Z. H. / Cheng, K. Y. et al. | 2005
- 1236
-
Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emittersPerez-Paz, M. Noemi / Zhou, Xuecong / Muñoz, Martin / Sohel, Mohammad / Lu, Hong / Fernandez, Francisco / Jean-Mary, Fleumingue / Akins, Daniel L. / Tamargo, Maria C. et al. | 2005
- 1240
-
Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical propertiesOhmori, M. / Kawazu, T. / Torii, K. / Sakaki, H. et al. | 2005
- 1243
-
InAs quantum dots grown with an source using molecular-beam epitaxySugaya, Takeyoshi / Komori, Kazuhiro / Yamauchi, Shougo / Amano, Takeru et al. | 2005
- 1247
-
Growth related interference effects in band edge thermometry of semiconductorsSacks, R. N. / Barlett, D. / Taylor, C. A. / Williams, J. et al. | 2005
- 1252
-
Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductorsKatzer, D. S. / Storm, D. F. / Binari, S. C. / Holm, R. T. / Mahon, R. / Yang, M. J. / Freitas, J. A. et al. | 2005
- 1257
-
Inert gas maintenance for molecular-beam epitaxy systemsOye, Michael M. / Ahn, J. / Cao, C. / Chen, H. / Fordyce, W. / Gazula, D. / Govindaraju, S. / Hurst, J. B. / Lipson, S. / Lu, D. et al. | 2005
- 1262
-
Comparative studies of the epireadiness of InP substrates for molecular-beam epitaxy growthFastenau, J. M. / Lubyshev, D. / Wu, Y. / Doss, C. / Liu, W. K. et al. | 2005
- 1267
-
Storage conditions for high-accuracy composition standards of AlGaAsBertness, K. A. / Roshko, A. / Asher, S. E. / Perkins, C. L. et al. | 2005
- 1272
-
Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there?Doolittle, W. Alan / Carver, Alexander G. / Henderson, Walter et al. | 2005
- 1277
-
Electronic properties of ZnO epilayers grown on -plane sapphire by plasma-assisted molecular beam epitaxyMurphy, T. E. / Chen, D. Y. / Cagin, E. / Phillips, J. D. et al. | 2005
- 1281
-
Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxyOh, D. C. / Suzuki, T. / Kim, J. J. / Makino, H. / Hanada, T. / Cho, M. W. / Yao, T. / Song, J. S. / Ko, H. J. et al. | 2005
- 1286
-
Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxyMinegishi, Tsutomu / Yoo, JungHoon / Suzuki, Hideyuki / Vashaei, Zahra / Inaba, Katsuhiko / Shim, Keesam / Yao, Takafumi et al. | 2005
- 1291
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Depth profiling the electronic structures at interface grown by molecular beam epitaxyLay, T. S. / Chang, S. C. / Din, G. J. / Yeh, C. C. / Hung, W. H. / Lee, W. G. / Kwo, J. / Hong, M. et al. | 2005
- 1294
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Mn doping and -type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxyNovikov, S. V. / Edmonds, K. W. / Zhao, L. X. / Giddings, A. D. / Wang, K. Y. / Campion, R. P. / Staddon, C. R. / Fay, M. W. / Han, Y. / Brown, P. D. et al. | 2005
- 1299
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Molecular beam epitaxial growth of epilayersCottier, R. J. / Amir, F. Z. / Hossain, K. / House, J. B. / Gorman, B. P. / Perez, J. M. / Holland, O. W. / Golding, T. D. / Stokes, D. W. et al. | 2005
- 1304
-
Molecular-beam epitaxial growth and characterization of : Thin films and superlatticesMaksimov, O. / Sheu, B. L. / Schiffer, P. / Samarth, N. et al. | 2005
- 1308
-
Structure and magnetic properties of Cr-doped GaNKim, J. J. / Makino, H. / Sakurai, M. / Oh, D. C. / Hanada, T. / Cho, M. W. / Yao, T. / Emura, S. / Kobayashi, K. et al. | 2005
- 1313
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Dielectric functions of molecular-beam-epitaxy-grown thin filmsWeber, Z. J. / Peiris, F. C. / Liu, X. / Furdyna, J. K. et al. | 2005
- 1317
-
Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devicesOdnoblyudov, V. A. / Tu, C. W. et al. | 2005
- 1320
-
Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAsBank, S. R. / Wistey, M. A. / Yuen, H. B. / Lordi, V. / Gambin, V. F. / Harris, J. S. et al. | 2005
- 1324
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Protecting wafer surface during plasma ignition using an arsenic capWistey, M. A. / Bank, S. R. / Yuen, H. B. / Goddard, L. L. / Gugov, T. / Harris, J. S. et al. | 2005
- 1328
-
Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and grown by molecular beam epitaxyYuen, Homan B. / Wistey, Mark A. / Bank, Seth R. / Bae, Hopil / Harris, James S. et al. | 2005
- 1333
-
Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III–V dilute nitridesFotkatzikis, A. / Pinault, M.-A. / Coaquira, J. A. H. / Freundlich, A. et al. | 2005
- 1337
-
Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers atBank, Seth R. / Wistey, Mark A. / Yuen, Homan B. / Goddard, Lynford L. / Bae, Hopil / Harris, James S. et al. | 2005
- 1341
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GaNAs(001) surface phases under growing conditionMori, Takahiro / Morimura, Toshiharu / Hanada, Takashi / Yao, Takafumi et al. | 2005