UV‐Cu II‐laser with helical hollow cathodes (English)
National licence
- New search for: Eichler, H. J.
- New search for: Hamisch, J.
- New search for: Macdonald, R.
- New search for: Sollinger, M.
- New search for: Chen, Yuging
- New search for: Eichler, H. J.
- New search for: Hamisch, J.
- New search for: Macdonald, R.
- New search for: Sollinger, M.
- New search for: Chen, Yuging
In:
Journal of Applied Physics
;
61
, 5
;
2069-2071
;
1987
- Article (Journal) / Electronic Resource
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Title:UV‐Cu II‐laser with helical hollow cathodes
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Contributors:Eichler, H. J. ( author ) / Hamisch, J. ( author ) / Macdonald, R. ( author ) / Sollinger, M. ( author ) / Chen, Yuging ( author )
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Published in:Journal of Applied Physics ; 61, 5 ; 2069-2071
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Publisher:
- New search for: American Institute of Physics
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Publication date:1987-03-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 61, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1677
-
Elimination of residual image distortion in the stigmatic ion microscopeBernius, Mark T. / Ling, Yong‐Chien / Morrison, George H. et al. | 1987
- 1682
-
Laser‐induced grating characteristics in doped lithium niobate crystalsArizmendi, Luis / Kliewer, Michael J. / Powell, Richard C. et al. | 1987
- 1688
-
Pulsed DF and DF‐CO2 laser performanceDreiling, T. D. et al. | 1987
- 1697
-
Influence of thermal effects on the eigenmodes of gain‐guided diode laser arraysHadley, G. R. / Hohimer, J. P. / Owyoung, A. et al. | 1987
- 1701
-
Small‐scale laser effects experiments on graphite: Coupling coefficient, lateral loss, and effective heat of ablationKlein, Claude A. / Menefee, Richard F. / Krenek, Brendan D. / Berry, Michael J. et al. | 1987
- 1713
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InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxyTanaka, Hidenao / Kawamura, Yuichi / Nojima, Shunji / Wakita, Koichi / Asahi, Hajime et al. | 1987
- 1720
-
Electrical derivative characteristics of InGaAsP buried heterostructure lasers with a rectifying contactWright, P. D. et al. | 1987
- 1725
-
Effect of stress relaxation on polarization of InGaAsP buried heterostructure lasers by a repetitive temperature changeYano, M. / Kanno, Y. / Ishikawa, H. / Imai, H. et al. | 1987
- 1728
-
Theoretical and experimental studies of LiNbO3 degenerate acoustic elastic convolverCho, Yasuo / Yamanouchi, Kazuhiko et al. | 1987
- 1740
-
Influence of the excitation frequency on surface wave argon discharges: Study of the light emissionBoisse‐Laporte, C. / Granier, A. / Bloyet, E. / Leprince, P. / Marec, J. et al. | 1987
- 1747
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Optimizing hot‐ion production from a gas‐injected washer gunMcCarrick, M. J. / Ellis, R. F. / Booske, J. H. / Koepke, M. et al. | 1987
- 1753
-
A two‐temperature model of the inductively coupled rf plasmaMostaghimi, Javad / Proulx, Pierre / Boulos, Maher I. et al. | 1987
- 1761
-
Plasma density measurement in an imperfect microwave cavitySouw, Eng‐Kie et al. | 1987
- 1773
-
Common parametrizations of electron transport, collision cross section, and dielectric strength data for binary gas mixturesVan Brunt, R. J. et al. | 1987
- 1788
-
Multiple hydrogen occupancy of vacancies in FeBesenbacher, F. / Myers, S. M. / Nordlander, P. / No&slash;rskov, J. K. et al. | 1987
- 1795
-
The coupling technique: A two‐wave acoustic method for the study of dislocation dynamicsGremaud, G. / Bujard, M. / Benoit, W. et al. | 1987
- 1806
-
Formation mechanism of hydrogen‐associated defect centers at silica optical fiber surfacesHibino, Yoshinori / Hanafusa, Hiroaki et al. | 1987
- 1811
-
Cohesion energy in anisotropic particles aqueous slurriesFripiat, J. J. / Setton, R. et al. | 1987
- 1816
-
Dislocation‐mechanics‐based constitutive relations for material dynamics calculationsZerilli, Frank J. / Armstrong, Ronald W. et al. | 1987
- 1826
-
A kinetic model for solid‐state silicide nucleationBene´, R. W. et al. | 1987
- 1834
-
Retarded and enhanced dopant diffusion in silicon related to implantation‐induced excess vacancies and interstitialsServidori, M. / Angelucci, R. / Cembali, F. / Negrini, P. / Solmi, S. / Zaumseil, P. / Winter, U. et al. | 1987
- 1841
-
Destruction mechanism of III‐V compound quantum well structures due to impurity diffusionTan, T. Y. / Go¨sele, U. et al. | 1987
- 1846
-
Zinc diffusion in n‐type indium phosphidevan Gurp, G. J. / Boudewijn, P. R. / Kempeners, M. N. C. / Tjaden, D. L. A. et al. | 1987
- 1856
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Initial stages of epitaxial growth of GaAs on (100) siliconBiegelsen, D. K. / Ponce, F. A. / Smith, A. J. / Tramontana, J. C. et al. | 1987
- 1860
-
Investigation of zinc incorporation in GaAs epilayers grown by low‐pressure metalorganic chemical‐vapor depositionChang, C. Y. / Chen, L. P. / Wu, C. H. et al. | 1987
- 1864
-
Formation of PtSi in the presence of AlChang, Chin‐An et al. | 1987
- 1869
-
Effect of deposition conditions on the nucleation and growth of glow‐discharge a‐Si:HCollins, R. W. / Cavese, J. M. et al. | 1987
- 1883
-
An x‐ray topographic study of β‐SiC films on Si substratesFatemi, M. / Nordquist, P. E. R. et al. | 1987
- 1891
-
Role of oxygen and nitrogen in the titanium‐silicon reactionKikuchi, Akira / Ishiba, Tsutomu et al. | 1987
- 1895
-
Preparation of Hg1−xCdxTe with a semiclosed rotational liquid‐phase‐epitaxy systemLan, H. / Cheng, K. Y. / Shiue, C. C. / Pang, Y. M. / Yang, S. J. et al. | 1987
- 1898
-
Deposition and electrical properties of in situ phosphorus‐doped silicon films formed by low‐pressure chemical vapor depositionLearn, Arthur J. / Foster, Derrick W. et al. | 1987
- 1905
-
Carrier freeze‐out effects in semiconductor devicesAhmad, Nizam et al. | 1987
- 1910
-
Electron avalanche injection on 10‐nm dielectric filmsDori, Leonello / Arienzo, Maurizio / Nguyen, Thao N. / Fischetti, Massimo V. / Stein, Kenneth J. et al. | 1987
- 1916
-
Characterization of hydrogenated amorphous silicon by capacitance‐voltage and surface photovoltage measurements using liquid Schottky barriersSakata, I. / Ishida, T. / Okazaki, S. / Saitoh, T. / Yamanaka, M. / Hayashi, Y. et al. | 1987
- 1928
-
Transverse magnetoresistance in pyrrhotite for B⊥cVitoratos, E. / Sakkopoulos, S. et al. | 1987
- 1931
-
Conductance transient spectroscopy of metal‐semiconductor field effect transistorsHarrang, J. P. / Tardella, A. / Rosso, M. / Alnot, P. / Peray, J. F. et al. | 1987
- 1937
-
Improvement of two‐dimensional electron gas concentration in selectively doped GaAs/N‐AlGaAs heterostructures by atomic planar dopingIshikawa, Tomonori / Ogasawara, Kazuto / Nakamura, Tomohiro / Kuroda, Shigeru / Kondo, Kazuo et al. | 1987
- 1941
-
C‐V measurement and modelization of GaInAs/InP heterointerface with trapsKazmierski, K. / Philippe, P. / Poulain, P. / de Cremoux, B. et al. | 1987
- 1947
-
The relation between positive charge and breakdown in metal‐oxide‐silicon structuresWeinberg, Z. A. / Nguyen, T. N. et al. | 1987
- 1957
-
Propagation and generation of Josephson radiation in superconductor/insulator superlatticesAuvil, P. R. / Ketterson, J. B. et al. | 1987
- 1967
-
Origin of anomalous increase in anisotropy field change for heavily ion‐implanted magnetic bubble garnetsImura, R. / Sugita, Y. / Suzuki, R. et al. | 1987
- 1972
-
Segregated microstructure in sputtered Co‐Cr film revealed by selective wet etchingMaeda, Yasushi / Asahi, Masayoshi et al. | 1987
- 1979
-
Structure and magnetism of Co‐Cr thin films with an artificial superlattice structureSato, Noboru et al. | 1987
- 1990
-
Spin reorientation in Nd2(Fe0.9M0.1)14B (M=Co, Ni, Ru)Yen, L. S. / Chen, J. C. / Ku, H. C. et al. | 1987
- 1995
-
Surface characterization of InP using photoluminescenceChang, R. R. / Iyer, R. / Lile, D. L. et al. | 1987
- 2005
-
An electroreflectance study of CdTeEnloe, W. S. / Parker, J. C. / Vespoli, J. / Myers, T. H. / Harper, R. L. / Schetzina, J. F. et al. | 1987
- 2011
-
Photoluminescence spectroscopy of ion‐implanted 3C‐SiC grown by chemical vapor depositionFreitas, J. A. / Bishop, S. G. / Edmond, J. A. / Ryu, J. / Davis, R. F. et al. | 1987
- 2017
-
Optical properties of silicon related insulatorsRavindra, N. M. / Narayan, J. et al. | 1987
- 2022
-
Electromagnetic resonance enhanced photoabsorption in planar metal–oxide–metal tunnel junction detectorsSoole, J. B. D. / Hughes, H. P. / Apsley, N. et al. | 1987
- 2030
-
Brillouin scattering in thin samples: Observation of backscattering components by 90° scatteringTakagi, Yasunari / Gammon, Robert W. et al. | 1987
- 2035
-
Synchrotron radiation‐excited chemical vapor deposition of SixNyHz filmKyuragi, Hakaru / Urisu, Tsuneo et al. | 1987
- 2038
-
Relative carrier densities and trap effects on the properties of CdS/CdTeFortmann, Charles M. / Fahrenbruch, Alan L. / Bube, Richard H. et al. | 1987
- 2046
-
An empirical theory of isc and voc in the ZnzCd1−zS/Cu2S solar cellMojumder, M. A. et al. | 1987
- 2054
-
WSi0.11 Schottky gates for GaAs metal semiconductor field‐effect transistorsCallegari, A. / Spiers, G. D. / Magerlein, J. H. / Guthrie, H. C. et al. | 1987
- 2059
-
Load following characteristics of SiGe/GaP thermoelectric generators and their response to external heatingEl‐Genk, Mohamed S. / Seo, Jong T. / Buksa, John J. et al. | 1987
- 2065
-
Hydrostatic pressure dependence of the optical absorption edge in Bi12SiO20Toyoda, T. / Nakanishi, H. / Endo, S. / Irie, T. et al. | 1987
- 2067
-
Determination of the onset of plastic deformation in ZnSe layers grown on (100) GaAs by molecular‐beam epitaxyKleiman, J. / Park, R. M. / Qadri, S. B. et al. | 1987
- 2069
-
UV‐Cu II‐laser with helical hollow cathodesEichler, H. J. / Hamisch, J. / Macdonald, R. / Sollinger, M. / Chen, Yuging et al. | 1987
- 2072
-
Observation of radiative surface states on InPKim, T. S. / Lester, S. D. / Streetman, B. G. et al. | 1987
- 2074
-
Measurement of ultrasound velocity in the spin‐glass CuMnHsu, T. C. / Marston, J. B. et al. | 1987
- 2077
-
On the effective mass in modeling nonstationary transportYe, Liangxiu / Stewart, R. A. / Churchill, J. N. et al. | 1987
- 2079
-
Photoluminescence in strained InGaAs/GaAs superlatticesDahl, D. A. / Dries, L. J. / Junga, F. A. / Opyd, W. G. / Chu, P. et al. | 1987
- 2082
-
On the mechanism and frequency limit of double‐barrier quantum‐well structuresPan, D. S. / Meng, C. C. et al. | 1987
- 2084
-
Preparation of doped hydrogenated amorphous silicon films by microwave electron‐cyclotron‐resonance plasma discharge depositionKitagawa, M. / Setsune, K. / Manabe, Y. / Hirao, T. et al. | 1987
- 2087
-
Minimum energy principle in magnetic insulation theorySlutz, Stephen A. et al. | 1987
- 2090
-
Time resolved transmission studies of poly(methyl methacrylate) films during ultraviolet laser ablative photodecompositionDavis, G. M. / Gower, M. C. et al. | 1987
- 2092
-
Anomalous substrate and annealing temperature dependencies of heavily boron‐doped hydrogenated amorphous siliconJang, Jin / Kim, Sung Chul et al. | 1987
- 2095
-
The origin of a highly resistive layer at a growth‐interrupted interface of GaAs grown by molecular‐beam epitaxyIimura, Y. / Shiraishi, T. / Takasugi, H. / Kawabe, M. et al. | 1987
- 2098
-
Interaction of a vircator microwave generator with an enclosing resonant cavityBenford, J. / Price, D. / Sze, H. / Bromley, D. et al. | 1987
- 2101
-
Band‐gap and spin‐orbit splitting of the lattice‐matched GaAsSb/InAs systemMani, H. / Joullie, A. / Joullie, A. M. / Girault, B. / Alibert, C. et al. | 1987