Preparation of (001) cube textured buffer layers on rolling-textured substrates by ion beam assisted pulsed laser deposition (English)
- New search for: Xiong, X. M.
- New search for: Wang, R. P.
- New search for: Zhou, Y. L.
- New search for: Guo, X. X.
- New search for: Lu, H. B.
- New search for: Pan, S. H.
- New search for: Yang, G. Z.
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- New search for: Zhang, X. P.
- New search for: Zhou, L.
- New search for: Xiong, X. M.
- New search for: Wang, R. P.
- New search for: Zhou, Y. L.
- New search for: Guo, X. X.
- New search for: Lu, H. B.
- New search for: Pan, S. H.
- New search for: Yang, G. Z.
- New search for: Liu, C. F.
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In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
16
, 4
;
2501-2504
;
1998
- Article (Journal) / Electronic Resource
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Title:Preparation of (001) cube textured buffer layers on rolling-textured substrates by ion beam assisted pulsed laser deposition
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Contributors:Xiong, X. M. ( author ) / Wang, R. P. ( author ) / Zhou, Y. L. ( author ) / Guo, X. X. ( author ) / Lu, H. B. ( author ) / Pan, S. H. ( author ) / Yang, G. Z. ( author ) / Liu, C. F. ( author ) / Wu, X. ( author ) / Zhang, X. P. ( author )
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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 16, 4 ; 2501-2504
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1998-07-01
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Size:4 pages
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ISSN:
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DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 16, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2003
-
Residual stress in low pressure chemical vapor deposition films deposited from silane and ammoniaTemple-Boyer, P. / Rossi, C. / Saint-Etienne, E. / Scheid, E. et al. | 1998
- 2008
-
Plasma cleaning and nitridation of sapphire substrates for epitaxy as studied by x-ray photoelectron diffractionSeelmann-Eggebert, M. / Zimmermann, H. / Obloh, H. / Niebuhr, R. / Wachtendorf, B. et al. | 1998
- 2016
-
Application of a toroidal plasma source to TiN thin film depositionZhang, B. C. / Cross, R. C. et al. | 1998
- 2021
-
Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate): A multitechnique study of the interphase regionsda Silva Sobrinho, A. S. / Schühler, N. / Klemberg-Sapieha, J. E. / Wertheimer, M. R. / Andrews, M. / Gujrathi, S. C. et al. | 1998
- 2031
-
Reactive ion etching for AlGaInP-GaInP laser structuresJuang, Y.Z. et al. | 1998
- 2031
-
Reactive ion etching for AlGalnP/GaInP laser structuresJuang, Y. Z. / Su, Y. K. / Chang, S. J. / Huang, D. F. / Chang, S. C. et al. | 1998
- 2037
-
Reactive ion etching of piezoelectric materials in plasmasLeech, Patrick W. et al. | 1998
- 2042
-
Deposition and characterization of gold thin films on Si by gas microwave plasmaTaniguchi, Yasuyuki / Shin-mura, Tadashi et al. | 1998
- 2047
-
Remote plasma etching of silicon nitride and silicon dioxide using gas mixturesKastenmeier, B. E. E. / Matsuo, P. J. / Oehrlein, G. S. / Langan, J. G. et al. | 1998
- 2057
-
Effects of wall recombination on the etch rate and plasma composition of an etch reactorFont, Gabriel I. / Boyd, Iain D. / Balakrishnan, Jitendra et al. | 1998
- 2065
-
Radial distributions of ion velocity, temperature, and density in ultrahigh-frequency, inductively coupled, and electron cyclotron resonance plasmasNakano, Toshiki / Samukawa, Seiji et al. | 1998
- 2073
-
Reactive sputtered titanium carbide/nitride and diamondlike carbon coatingsDeng, Jianguo / Braun, Manuel / Wei, Ying et al. | 1998
- 2078
-
Influence of surface impurities on plasma-driven permeation of deuterium through nickelHatano, Yuji / Nakamura, Hirofumi / Furuya, Hirotaka / Sugisaki, Masayasu et al. | 1998
- 2084
-
Properties of various sputter-deposited Cu–N thin filmsWang, Dao-yuan / Nakamine, Norio / Hayashi, Yasunori et al. | 1998
- 2093
-
Carbon nitride thin-film growth by pulsed laser depositionChen, Ming Y. / Murray, P. Terrence et al. | 1998
- 2099
-
Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmasSchaepkens, M. / Bosch, R. C. M. / Standaert, T. E. F. M. / Oehrlein, G. S. / Cook, J. M. et al. | 1998
- 2108
-
Electrical impedance analysis and etch rate maximization in dischargesLangan, J. G. / Rynders, S. W. / Felker, B. S. / Beck, S. E. et al. | 1998
- 2115
-
Chemical downstream etching of tungstenBlain, M. G. / Jarecki, R. L. / Simonson, R. J. et al. | 1998
- 2120
-
Electrical and optical properties of amorphous fluorocarbon films prepared by plasma polymerization of perfluoro-1,3-dimethylcyclohexaneWeber, A. / Pöckelmann, R. / Klages, C.-P. et al. | 1998
- 2125
-
Metal bonding during sputter film depositionShimatsu, T. / Mollema, R. H. / Monsma, D. / Keim, E. G. / Lodder, J. C. et al. | 1998
- 2132
-
Kinetic energy distribution of nitrogen ions in an electron cyclotron resonance plasmaFan, Z. Y. / Newman, N. et al. | 1998
- 2140
-
Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical sourceYasutake, K. / Takeuchi, A. / Kakiuchi, H. / Yoshii, K. et al. | 1998
- 2140
-
Molecular beam epitaxial growth of AIN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical sourceYasutake, K. et al. | 1998
- 2148
-
Distribution of species within an ethylene electron cyclotron resonance-microwave plasmaWebb, S. F. / Gaddy, G. A. / Blumenthal, Rik et al. | 1998
- 2153
-
Inductively coupled plasma etch processes for NiMnSbHong, J. / Caballero, J. A. / Lambers, E. S. / Childress, J. R. / Pearton, S. J. et al. | 1998
- 2162
-
Dually driven radio frequency plasma simulation with a three moment modelKim, Heon Chang / Manousiouthakis, Vasilios I. et al. | 1998
- 2173
-
Electron velocity distribution functions in a sputtering magnetron discharge for the Ex B directionSheridan, T.E. et al. | 1998
- 2173
-
Electron velocity distribution functions in a sputtering magnetron discharge for the directionSheridan, T. E. / Goeckner, M. J. / Goree, J. et al. | 1998
- 2177
-
Comparison of plasma chemistries for dry etching thin film electroluminescent display materialsLee, J. W. / Pathangey, B. / Davidson, M. R. / Holloway, P. H. / Lambers, E. S. / Davydov, B. / Anderson, T. J. / Pearton, S. J. et al. | 1998
- 2187
-
Experiments on the plasma assisted chemical vapor deposition of copperLakshmanan, Satish K. / Gill, William N. et al. | 1998
- 2198
-
Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor depositionFoster, J. E. / Wendt, A. E. / Wang, W. W. / Booske, J. H. et al. | 1998
- 2204
-
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in chemistriesWang, J. J. / Lambers, E. S. / Pearton, S. J. / Ostling, M. / Zetterling, C.-M. / Grow, J. M. / Ren, F. / Shul, R. J. et al. | 1998
- 2210
-
Effect of substrate bias on the properties of films by direct current saddle-field plasma-enhanced chemical-vapor depositionYoo, Young-Zo / Kim, HyoGun / Jang, Hong-Kyu / Jeong, YoungGeun / Kim, Geunsik et al. | 1998
- 2215
-
Role of oxygen in ion-enhanced etching of poly-Si and with chlorineKota, Gowri P. / Coburn, J. W. / Graves, David B. et al. | 1998
- 2222
-
Surface productions of CF and radicals in high-density fluorocarbon plasmasSuzuki, C. / Sasaki, K. / Kadota, K. et al. | 1998
- 2227
-
Simulations of plasmas with comparisons to diagnostic dataMeeks, Ellen / Ho, Pauline / Ting, Aili / Buss, Richard J. et al. | 1998
- 2240
-
Role of the bias voltage during the deposition of thin tin oxide films by plasma assisted chemical vapor depositionArefi-Khonsari, F. / Hellegouarc’h, F. / Amouroux, J. et al. | 1998
- 2245
-
Challenges in electron cyclotron resonance plasma etching of surface for fabrication of ridge optical waveguidesMitsugi, Naoki / Nagata, Hirotoshi / Shima, Kaori / Tamai, Masumi et al. | 1998
- 2252
-
Synchrotron radiation induced SiC formation on Si substrate employing methanol and H radicalIkeda, M. / Inayoshi, M. / Hori, M. / Goto, T. / Hiramatsu, M. / Hiraya, A. et al. | 1998
- 2257
-
Application of target factor analysis and linear least squares fitting to extracting chemical information from Auger depth profiles of a Mo/Si thin multilayer systemMorohashi, T. / Hoshi, T. / Nikaido, H. / Kudo, M. et al. | 1998
- 2261
-
MgO(100) surface relaxation by symmetrized automated tensor low energy electron diffraction analysisFerry, D. / Suzanne, J. / Panella, V. / Barbieri, A. / Van Hove, M. A. / Bibérian, J.-P. et al. | 1998
- 2267
-
Studying low-pressure chemical vapor deposition a-Si:B alloys by optical spectroscopyYang, G.-R. / Zhao, Y.-P. / Tong, B. Y. et al. | 1998
- 2272
-
Defect-associated photoluminescence and rapid thermal annealing effect on films grown in the plasma phaseKim, Keunjoo et al. | 1998
- 2277
-
High-quality Fe(001) single crystal films on MgO(001) substrates for electron spectroscopiesBertacco, R. / De Rossi, S. / Ciccacci, F. et al. | 1998
- 2281
-
Microstructural characterization of ion assisted thin films by visible and infrared ellipsometryBrunet-Bruneau, A. / Souche, D. / Fisson, S. / Nguyen Van, V. / Vuye, G. / Abeles, F. / Rivory, J. et al. | 1998
- 2287
-
Optical properties of zirconia–yttria single crystal compounds by reflection electron energy loss spectroscopyYubero, F. / Espinós, J. P. / González-Elipe, A. R. et al. | 1998
- 2292
-
Effect of fractal crystallization on the depositing sequence of a Pd/Ge thin film systemZhiwen, Chen / Shuyuan, Zhang / Shun, Tan / Jianguo, Hou / Yuheng, Zhang et al. | 1998
- 2295
-
Delamination mechanism in relation to adhesion of cubic boron nitrideKim, Ig-Hyeon / Kim, Seon-Hyo / Kim, Kyoung-Bo et al. | 1998
- 2300
-
Electrical characterization of the interface after anodic sulfidization treatmentsRousière, O. / Lemoine, D. / Quémerais, A. / Granger, R. / Rolland, S. / Triboulet, R. et al. | 1998
- 2300
-
Electrical characterization of the p-H1-xZnxTe interface after anodic sulfidization treatmentsRousière, O. et al. | 1998
- 2309
-
Operation and oxidation of thermionic dispenser cathodes studied by high resolution photoemissionBailey, P. / Cowie, B. C. C. / Norman, D. et al. | 1998
- 2318
-
Soft x-ray photoelectron diffraction study of epitaxial InGaAs/GaAs(001)Proietti, M. G. / Turchini, S. / Garcı́a, J. / Arsenio, M. C. / Casado, C. / Martelli, F. / Prosperi, T. et al. | 1998
- 2326
-
Growth and characterization of epitaxial fcc Fe wedges on diamond (100)Li, Dongqi / Keavney, D. J. / Pearson, J. / Jiang, J. S. / Bader, S. D. / Keune, W. et al. | 1998
- 2330
-
Metrology of sub-0.5 μm silicon epitaxial filmsChen, Weize / Reif, Rafael et al. | 1998
- 2330
-
Metrology of sub-0.5 mm silicon epitaxial filmsChen, Weize et al. | 1998
- 2330
-
Metrology of sub-0.5 mu m silicon epitaxial filmsChen, W. / Reif, R. et al. | 1998
- 2337
-
Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted depositionHe, Xiao-Ming / Shu, Li / Li, Hai-Bo / Li, Heng-De / Lee, S.-T. et al. | 1998
- 2345
-
Improved optical scheme for nonintrusive vapor density monitoring by atomic absorption spectroscopyRay, A. / Majumdar, A. et al. | 1998
- 2350
-
Photoreflectance spectroscopy investigation of two-dimensional cesium metallic clusters on GaAs(100)Paget, D. / Kierren, B. / Houdré, R. et al. | 1998
- 2360
-
Piezoelectric, dielectric, and interfacial properties of aluminum nitride filmsLiufu, D. / Kao, K. C. et al. | 1998
- 2367
-
Onset of oscillations during growth on a vicinal surfaceHarris, S. et al. | 1998
- 2372
-
Preparation of nearly oxygen-free AlN thin films by pulsed laser depositionHe, Maoqi / Cheng, Naiqun / Zhou, Peizhen / Okabe, Hideo / Halpern, Joshua B. et al. | 1998
- 2372
-
Preparation of nearly oxygen-free AIN thin films by pulsed laser depositionHe, Maoqi et al. | 1998
- 2376
-
Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)Chegwidden, Scott / Dai, Zurong / Olmstead, Marjorie A. / Ohuchi, Fumio S. et al. | 1998
- 2381
-
Thickness distribution in pulsed laser deposited PZT filmsTyunina, M. / Wittborn, J. / Björmander, C. / Rao, K. V. et al. | 1998
- 2385
-
Growth of SiC films via precursors and a model for the profile development of the silicon underlayerLevinson, Joshua A. / Hamza, Alex V. / Shaqfeh, Eric S. G. / Balooch, Mehdi et al. | 1998
- 2395
-
Growth and characterization of potassium-doped superfulleride thin filmsSwami, Nathan / You, Yujian / Thompson, Mark E. / Koel, Bruce E. et al. | 1998
- 2400
-
Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: Modeling and comparison with experimentBogaerts, A. / Naylor, J. / Hatcher, M. / Jones, W. J. / Mason, R. et al. | 1998
- 2411
-
Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter depositionGall, D. / Petrov, I. / Madsen, L. D. / Sundgren, J.-E. / Greene, J. E. et al. | 1998
- 2418
-
Quantitative measurement of nodule formation in W–Ti sputteringLo, Chi-Fung / Draper, Darryl et al. | 1998
- 2423
-
Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxyRobey, S. W. et al. | 1998
- 2429
-
Structural coherence of sputtered Al/Ni multilayersTixier, S. / Böni, P. / Van Swygenhoven, H. et al. | 1998
- 2437
-
Structural change and heteroepitaxy induced by rapid thermal annealing of films on Si(111)Mattoso, N. / Mosca, D. H. / Schreiner, W. H. / Mazzaro, I. / Teixeira, S. R. / Macedo, W. A. A. / Martins, M. D. et al. | 1998
- 2442
-
buffer layer effects on the structural and electrical properties of thin films grown by sputtering on silicon substratesVelu, G. / Haccart, T. / Jaber, B. / Rèmiens, D. et al. | 1998
- 2448
-
Control of structural, electrical properties of thin films by the application of amorphous layerPaek, Su-Hyon / Lee, Kong-Soo / Seong, Jin-Yong / Choi, Duck-Kyun / Kim, Boum-Seock / Park, Chi-Sun et al. | 1998
- 2454
-
Consequences of three-dimensional physical and electromagnetic structures on dust particle trapping in high plasma density material processing dischargesHwang, Helen H. / Keiter, Eric R. / Kushner, Mark J. et al. | 1998
- 2463
-
Graphite growth influenced by crystallographic faces of Ni filmsYudasaka, Masako / Kikuchi, Rie / Ohki, Yoshimasa / Yoshimura, Susumu et al. | 1998
- 2466
-
Atomic force microscopy and ellipsometry study of the nucleation and growth mechanism of polycrystalline silicon films on silicon dioxideBasa, C. / Tinani, M. / Irene, E. A. et al. | 1998
- 2480
-
Pulsed electron-beam technology for surface modification of metallic materialsProskurovsky, D. I. / Rotshtein, V. P. / Ozur, G. E. / Markov, A. B. / Nazarov, D. S. / Shulov, V. A. / Ivanov, Yu. F. / Buchheit, R. G. et al. | 1998
- 2489
-
Influences of ion energy on morphology and preferred orientation of chromium thin films prepared by ion beam and vapor depositionKuratani, Naoto / Ebe, Akinori / Ogata, Kiyoshi et al. | 1998
- 2495
-
In situ growth of evaporated thin films using oxygen radicals: Effect of deposition temperatureGrahn, J. V. / Linder, M. / Fredriksson, E. et al. | 1998
- 2501
-
Preparation of (001) cube textured buffer layers on rolling-textured substrates by ion beam assisted pulsed laser depositionXiong, X. M. / Wang, R. P. / Zhou, Y. L. / Guo, X. X. / Lu, H. B. / Pan, S. H. / Yang, G. Z. / Liu, C. F. / Wu, X. / Zhang, X. P. et al. | 1998
- 2505
-
Effect of bismuth on the ferroelectric properties of thin films deposited on by a modified radio-frequency magnetron sputtering techniqueYang, Cheol-Hoon / Yoon, Soon-Gil et al. | 1998
- 2510
-
Nitridation of vacuum evaporated molybdenum films in mixturesAmazawa, Takao / Oikawa, Hideo et al. | 1998
- 2517
-
Surface characterization of thin films of tetrathiofulvalene 7,7,8,8-tetracyano--quinodimethane evaporated on NaCl(001)Fraxedas, J. / Caro, J. / Figueras, A. / Gorostiza, P. / Sanz, F. et al. | 1998
- 2524
-
Helium sticking coefficient on cryopanels coated by activated carbonÖzdemir, I. / Perinic, D. et al. | 1998
- 2528
-
Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysisBerkovits, V. L. / Ulin, V. P. / Paget, D. / Bonnet, J. E. / L’vova, T. V. / Chiaradia, P. / Lantratov, V. M. et al. | 1998
- 2539
-
Surface cleaning with hydrogen plasma for low-defect-density ZnSe homoepitaxial growthOhno, Tetsuichiro / Ohki, Akira / Matsuoka, Takashi et al. | 1998
- 2546
-
Chemical alteration of the native oxide layer on InP(111) by exposure to hyperthermal atomic hydrogenWolan, John T. / Hoflund, Gar B. et al. | 1998
- 2553
-
Diamond-like bonds in amorphous hydrogenated carbon films induced by x-ray irradiationSato, Fumio / Saito, Nobuo / Hirano, Yoshiyuki / Jayatissa, Ahalapitiya H. / Takizawa, Kuniharu / Kawado, Seiji / Kato, Takanori / Sugiyama, Hiroshi / Kagoshima, Yasushi / Ando, Masami et al. | 1998
- 2556
-
Use of a new type of atomic hydrogen source for cleaning and hydrogenation of compound semiconductive materialsKagadei, V. A. / Proskurovsky, D. I. et al. | 1998
- 2562
-
Synthesis and structure of Al clusters supported on A scanning tunneling microscopy studyLai, X. / Xu, C. / Goodman, D. W. et al. | 1998
- 2567
-
Surface modification of (100) -GaAs by radio frequency hydrogen plasmasSullivan, J. L. / Saied, S. O. / Layberry, R. / Cardwell, M. J. et al. | 1998
- 2572
-
Observation of adsorption and reaction of on crystalline under steady-state conditions using external-reflection infrared spectroscopyBermudez, V. M. et al. | 1998
- 2581
-
Temperature-programmed desorption study of the etching of Ni(110) with 2,4-pentanedioneNigg, H. L. / Masel, R. I. et al. | 1998
- 2585
-
Heterogeneous reactions of on NaCl and particlesGoodman, A. L. / Miller, T. M. / Grassian, V. H. et al. | 1998
- 2591
-
Electrical properties of thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery systemShin, Ju Cheol / Lee, Jong Myeong / Hong, Suk-Kyoung / Cho, Ho Jin / Kim, Kwon Seok / Hwang, Cheol Seong / Kim, Hyeong Joon et al. | 1998
- 2595
-
Characteristic losses in metals: Al, Be, and NiMadden, H. H. / Landers, R. / Kleiman, G. G. / Zehner, D. M. et al. | 1998
- 2604
-
Copper diffusion in amorphous germaniumDoyle, J. P. / Kuznetsov, A. Yu. / Svensson, B. G. et al. | 1998
- 2608
-
Thermally induced processes in thin layers, obtained by coevaporation of and SnPodolesheva, I. / Platikanova, V. / Konstantinov, I. / Dimov, V. / Tarassov, M. et al. | 1998
- 2614
-
General technological modeling method for the design of transparent conductive electrodesGolan, G. / Axelevitch, A. / Rabinovitch, E. et al. | 1998
- 2619
-
Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100)Silvestre, Conrad / Thompson, Phillip / Jernigan, Glenn / Simons, David et al. | 1998
- 2625
-
Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor depositionKang, Dae-Hwan / Ha, Seung-Chul / Kim, Ki-Bum / Min, Seok-Hong et al. | 1998
- 2632
-
Study of the dynamics of point defects at Si(111)-7×7 surfaces with scanning tunneling microscopyHwang, Ing-Shouh / Lo, Rong-Li / Tsong, Tien T. et al. | 1998
- 2632
-
Study of the dynamics of point defects at Si(111)-7x7 surfaces with scanning tunneling microscopyHwang, Ing-Shouh et al. | 1998
- 2641
-
Efficiency improvement in low temperature metal-oxide-semiconductor solar cells by thin metal film deposition on photon receiving areaLee, Kuo-Chung / Hwu, Jenn-Gwo et al. | 1998
- 2646
-
Improved formation of silicon dioxide films in liquid phase depositionHuang, C. J. / Houng, M. P. / Wang, Y. H. / Wang, N. F. / Chen, Jiann-Ruey et al. | 1998
- 2653
-
Ballistic electron emission microscopy studies on heterostructuresSumiya, Touru / Miura, Tadao / Tanaka, Shun-ichiro et al. | 1998
- 2663
-
Analysis of GaAs properties under biaxial tensile stressKim, Ki Soo / Yang, Gye Mo / Lee, Hyung Jae et al. | 1998
- 2668
-
Structure engineering for hillock-free pure aluminum sputter deposition for gate and source line fabrication in active-matrix liquid crystal displaysVoutsas, Apostolos T. / Hibino, Yoshi / Pethe, Rajiv / Demaray, Ernest et al. | 1998
- 2678
-
Control of performance and stability of thin film diodes using chromium nitride contactsMc Garvey, B. / Curran, J. E. / Ford, R. A. / Gale, I. G. / Hewett, J. / Theobald, M. et al. | 1998
- 2683
-
Hydrogen passivation at the AI-H:Sl(111)-(1x1) interfaceGrupp, C. et al. | 1998
- 2683
-
Hydrogen passivation at the Al/H:Si(111)-(1x1) interfaceGrupp, C. / Taleb-Ibrahimi, A. et al. | 1998
- 2683
-
Hydrogen passivation at the Al/H:Si(111)-(1×1) interfaceGrupp, C. / Taleb-Ibrahimi, A. et al. | 1998
- 2687
-
Mapping local susceptibility using a scanning coaxial write/read headStröm, Valter / Rao, K. V. et al. | 1998
- 2693
-
Acquisition of clean ultrahigh vacuum using chemical treatmentTatenuma, K. / Uchida, K. / Itoh, T. / Momose, T. / Ishimaru, H. et al. | 1998
- 2698
-
Collision cell containment of dense gas targets for high vacuum applicationsKetsdever, Andrew D. / Muntz, E. P. et al. | 1998
- 2703
-
Improvement of turbomolecular pumps for ultraclean, low-pressure, and high-gas-flow processingIno, Kazuhide / Sekine, Katsuyuki / Shibata, Tadashi / Ohmi, Tadahiro / Maejima, Yasushi et al. | 1998
- 2711
-
Achievement of extremely high vacuum in an electrolytically polished stainless steel vacuum chamberWatanabe, Shu / Kurokouchi, Satoshi / Kato, Shigeki / Aono, Masakazu et al. | 1998
- 2718
-
Inner surface modification of 40Cr steel cylinder with a new plasma source ion implantation methodSun, Mu / Yang, Si-ze / Yao, Wen-qing et al. | 1998
- 2722
-
Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch toolKarecki, Simon / Pruette, Laura / Reif, Rafael / Beu, Laurie / Sparks, Terry / Vartanian, Victor et al. | 1998
- 2725
-
Heteroepitaxial growth of RuO2 thin films on a-Al2O3 substrates with CeO2 buffer layers by pulsed laser depositionChen, C.L. et al. | 1998
- 2725
-
Heteroepitaxial growth of thin films on substrates with buffer layers by pulsed laser depositionChen, C. L. / Jia, Q. X. / Lu, Y. C. / Smith, J. L. / Mitchell, T. E. et al. | 1998
- 2725
-
Heteroepitaxial growth of RuO2 thin films on alpha -Al2O3 substrates with CeO2 buffer layers by pulsed laser depositionChen, C.L. / Jia, Q.X. / Lu, Y.C. / Smith, J.L. / Mitchell, T.E. et al. | 1998
- 2728
-
Decay length of the pressure dependent deposition rate for magnetron sputteringDrüsedau, Tilo P. / Löhmann, Mirko / Garke, Bernd et al. | 1998
- 2733
-
Thermodynamic theory for preferred orientation in carbon and cubic BNMcKenzie, D. R. / Bilek, M. M. M. et al. | 1998
- 2735
-
Rapid thermal annealing of reactive sputtered tantalum oxide films on GaAs in atmosphereEftekhari, G. et al. | 1998
- 2738
-
High-performance x-ray detector for appearance potential spectroscopyRangelov, G. / Ertl, K. / Passek, F. / Vonbank, M. / Bassen, S. / Reinmuth, J. / Donath, M. / Dose, V. et al. | 1998
- 2742
-
Erratum: “Silicon oxycarbide formation on SiC surfaces and the interface” [J. Vac. Sci. Technol. A 15, 1597 (1997)]Önneby, C. / Pantano, C. G. et al. | 1998
- 2744
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CUMULATIVE AUTHOR INDEX| 1998