Phase‐resolved photoacoustic microscopy: Application to ferromagnetic layered samples (English)
National licence
- New search for: Cesar, C. L.
- New search for: Vargas, H.
- New search for: Pelzl, J.
- New search for: Miranda, L. C. M.
- New search for: Cesar, C. L.
- New search for: Vargas, H.
- New search for: Pelzl, J.
- New search for: Miranda, L. C. M.
In:
Journal of Applied Physics
;
55
, 10
;
3460-3464
;
1984
- Article (Journal) / Electronic Resource
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Title:Phase‐resolved photoacoustic microscopy: Application to ferromagnetic layered samples
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Contributors:Cesar, C. L. ( author ) / Vargas, H. ( author ) / Pelzl, J. ( author ) / Miranda, L. C. M. ( author )
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Published in:Journal of Applied Physics ; 55, 10 ; 3460-3464
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Publisher:
- New search for: American Institute of Physics
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Publication date:1984-05-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 55, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3453
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The use of linear predictive modeling for the analysis of transients from experiments on semiconductor defectsShapiro, Finley R. / Senturia, Stephen D. / Adler, David et al. | 1984
- 3460
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Phase‐resolved photoacoustic microscopy: Application to ferromagnetic layered samplesCesar, C. L. / Vargas, H. / Pelzl, J. / Miranda, L. C. M. et al. | 1984
- 3460
-
Phase-resolved photoacoustic microscopyCesar, C.L. / Vargas, H. / Pelzl, J. / Miranda, L.C.M. et al. | 1984
- 3465
-
Crystallization behavior of evaporated Gd‐Fe alloy filmsLee, S. R. / Miller, A. E. et al. | 1984
- 3471
-
Pressure dependence of oxygen‐related defect levels in siliconKeller, W. W. et al. | 1984
- 3478
-
Misfit dislocations in (111)A InP/In0.53Ga0.47As/InP double heterostructure wafers grown by liquid phase epitaxyYamazaki, Susumu / Nakajima, Kazuo / Komiya, Satoshi / Kishi, Yutaka / Akita, Kenzo et al. | 1984
- 3485
-
Effects of Cl+ and F+ implantation of oxidation‐induced stacking faults in siliconXu, J. Y. / Bronsveld, P. M. / Boom, G. / De Hosson, J. Th. M. et al. | 1984
- 3490
-
Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperatureWilson, R. G. et al. | 1984
- 3495
-
Hole traps and trivalent silicon centers in metal/oxide/silicon devicesLenahan, P. M. / Dressendorfer, P. V. et al. | 1984
- 3500
-
Chromium silicide formation by ion mixingShreter, U. / So, Frank C. T. / Nicolet, M‐A. et al. | 1984
- 3505
-
Inclined pileup of screw dislocations at the crack tip without a dislocation‐free zoneChang, S.‐J. / Ohr, S. M. et al. | 1984
- 3514
-
Shallow junction cobalt silicide contacts with enhanced electromigration resistanceVaidya, S. / Schutz, R. J. / Sinha, A. K. et al. | 1984
- 3518
-
Dopant diffusion in silicon: A consistent view involving nonequilibrium defectsMathiot, D. / Pfister, J. C. et al. | 1984
- 3531
-
Titanium diffusion into LiNbO3 as a function of stoichiometryHolmes, R. J. / Smyth, D. M. et al. | 1984
- 3536
-
Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substratesPsaras, P. A. / Thompson, R. D. / Herd, S. R. / Tu, K. N. et al. | 1984
- 3536
-
Structure and growth kinetics of RhSi on single crystal, polycristalline, and amorphous silicon substratesPsaras, P.A. / Thompson, R.D. / Herd, S.R. / Tu, K.N. et al. | 1984
- 3544
-
A15 Nb‐Sn tunnel junction fabrication and propertiesRudman, D. A. / Hellman, F. / Hammond, R. H. / Beasley, M. R. et al. | 1984
- 3554
-
Influence of arsenic species and growth temperature on the properties of GaAs/(Al,Ga)As superlattices grown by molecular beam epitaxySun, Ya Li / Masselink, W. T. / Fischer, R. / Klein, M. V. / Morkoc&hook;, H. / Bajaj, K. K. et al. | 1984
- 3558
-
Titanium silicide formationBerti, M. et al. | 1984
- 3558
-
Titanium silicide formation: Effect of oxygen distribution in the metal filmBerti, M. / Drigo, A. V. / Cohen, C. / Siejka, J. / Bentini, G. G. / Nipoti, R. / Guerri, S. et al. | 1984
- 3566
-
Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperatureAsano, Tanemasa / Ishiwara, Hiroshi et al. | 1984
- 3571
-
Gas source molecular beam epitaxy of GaxIn1−xPyAs1−yPanish, M. B. / Sumski, S. et al. | 1984
- 3577
-
Determination of the gap density of states in amorphous silicon by phase shift analysis of the modulated photocurrentAktas¸, G. / Skarlatos, Y. et al. | 1984
- 3582
-
Statistical comparisons of data on band‐gap narrowing in heavily doped silicon: Electrical and optical measurementsBennett, Herbert S. / Wilson, Charles L. et al. | 1984
- 3588
-
Contour maps of EL2 deep level in liquid‐encapsulated Czochralski GaAsHolmes, D. E. / Chen, R. T. et al. | 1984
- 3595
-
Deep and shallow levels in n‐type indium phosphide irradiated with 200‐keV deuteronsMacrander, A. T. / Schwartz, B. / Focht, M. W. et al. | 1984
- 3603
-
On the Hall effect observation of ∼0.07 eV deep acceptor in gallium arsenidePo¨do¨r, B. et al. | 1984
- 3605
-
Deep levels in n‐CdTeIsett, L. C. / Raychaudhuri, Pranab K. et al. | 1984
- 3613
-
Broad luminescent band in Zn‐doped AlxGa1−xAs grown by metalorganic chemical vapor depositionSakamoto, Masamichi / Okada, Tsunekazu / Mori, Yoshifumi / Kaneko, Kunio et al. | 1984
- 3617
-
Existence of &bartil;64‐meV deep acceptor in Se‐implanted GaAs after close‐contact annealingDansas, P. / Charlec, J‐P. et al. | 1984
- 3624
-
Comparison of models of the built‐in electric field in silicon at high donor densitiesLowney, Jeremiah R. / Geist, Jon C. et al. | 1984
- 3628
-
Nonlinear generation of sum and difference frequency waves by two helicon waves in a semiconductorSalimullah, Md. / Ferdous, Tahmina et al. | 1984
- 3632
-
Monte Carlo investigation of transient hole transport in GaAsBrennan, K. / Hess, K. / Iafrate, G. J. et al. | 1984
- 3636
-
Photocurrent deep level transient spectroscopy in siliconBrotherton, S. D. et al. | 1984
- 3644
-
Accurate determination of the free carrier capture kinetics of deep traps by space‐charge methodsPons, D. et al. | 1984
- 3658
-
Conductance along iron‐doped silicon grain boundariesMiremadi, Bijan K. / Morrison, S. Roy et al. | 1984
- 3664
-
Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)Bhattacharya, P. K. / Subramanian, S. / Ludowise, M. J. et al. | 1984
- 3669
-
Peripheral electron‐beam induced current response of a shallow p‐n junctionHolloway, H. et al. | 1984
- 3676
-
An in situ x‐ray study of gold/barrier‐metal interactions with InGaAsP/InP layersVandenberg, J. M. / Temkin, H. et al. | 1984
- 3682
-
On the nonequilibrium statistics and small signal admittance of Si‐SiO2 interface traps in the deep‐depleted gated‐diode structureAgarwal, A. K. / White, M. H. et al. | 1984
- 3695
-
Field‐effect studies on p‐type CuInTe2 metal‐insulator‐semiconductor structuresDawar, A. L. / Kumar, Anil / Kumar, Partap / Mathur, P. C. et al. | 1984
- 3699
-
Nonlinearity effects in the current‐voltage characteristic of p‐type yttrium iron garnet epitaxial filmsPaoletti, A. / Scarinci, F. / Tucciarone, A. / Brandle, C. D. et al. | 1984
- 3702
-
Hydrogenation effects in sputtered polycrystalline cadmium tellurideWang, Francis / Reinhard, D. K. et al. | 1984
- 3706
-
Characterization of rf‐sputtered BaTiO3 thin films using a liquid electrolyte for the top contactRose, T. L. / Kelliher, E. M. / Scoville, A. N. / Stone, S. E. et al. | 1984
- 3715
-
Some properties of crystallized tantalum pentoxide thin films on siliconOehrlein, G. S. / d’Heurle, F. M. / Reisman, A. et al. | 1984
- 3726
-
Influence of plastic deformation on the magnetic transition temperature of L12‐type materialsIkeda, Koˆki / Takahashi, Seiki et al. | 1984
- 3732
-
Stationary motion of a domain wall in the presence of an in‐plane magnetic field in a bubble garnet filmKosin´ski, R. A. / Engemann, J. et al. | 1984
- 3739
-
A composite numerical model for the coercivity of soft magnetic materialsSukiennicki, A. / Della Torre, E. et al. | 1984
- 3744
-
Electron paramagnetic resonance linewidth of superparamagnetic particlesMorais, P. C. / Tronconi, A. L. / Skeff Neto, K. et al. | 1984
- 3747
-
Dielectric relaxation in distributed dielectric layersKita, Yasuo et al. | 1984
- 3756
-
Heat treatment of semi‐insulating InP:Fe with phosphosilicate glass encapsulationKamijoh, T. / Takano, H. / Sakuta, M. et al. | 1984
- 3760
-
Composition dependence of photoluminescence of AlxGa1−xAs grown by molecular beam epitaxyMihara, M. / Nomura, Y. / Mannoh, M. / Yamanaka, K. / Naritsuka, S. / Shinozaki, K. / Yuasa, T. / Ishii, M. et al. | 1984
- 3765
-
Defect‐related emissions in photoluminescence spectra of AlxGa1−xAs grown by molecular beam epitaxyMihara, M. / Nomura, Y. / Mannoh, M. / Yamanaka, K. / Naritsuka, S. / Shinozaki, K. / Yuasa, T. / Ishii, M. et al. | 1984
- 3769
-
Optical properties of electrochemically deposited CdTe filmsOu, S. S. / Stafsudd, O. M. / Basol, B. M. et al. | 1984
- 3773
-
Pulsed laser treatment of La‐implanted Ni single crystalsBattaglin, G. / Carnera, A. / Della Mea, G. / Dona` dalle Rose, L. F. / Kulkarni, V. N. / Mazzoldi, P. / Miotello, A. / Jannitti, E. / Jain, Animesh K. / Sood, D. K. et al. | 1984
- 3779
-
Electrical and optical properties of Mg‐, Ca‐, and Zn‐doped InP crystals grown by the synthesis, solute diffusion techniqueKubota, Eishi / Ohmori, Yutaka / Sugii, Kiyomasa et al. | 1984
- 3785
-
Plasma polymerization and deposition of amorphous hydrogenated silicon from rf and dc silane plasmasRoss, R. C. / Jaklik, J. et al. | 1984
- 3795
-
Morphology and thermal properties of solvent‐cast arsenic sulfide filmsNorian, K. H. / Chern, G. C. / Lauks, I. et al. | 1984
- 3799
-
Thermal stability of the aluminum/titanium carbide/silicon contact systemEizenberg, M. / Brener, R. / Murarka, S. P. et al. | 1984
- 3804
-
Bulk and surface effects of heat treatment of p‐type InP crystalsWong, C‐C. Daniel / Bube, Richard H. et al. | 1984
- 3813
-
Argon‐ion assisted etching of silicon by molecular chlorineKolfschoten, A. W. / Haring, R. A. / Haring, A. / de Vries, A. E. et al. | 1984
- 3819
-
Size effects in Pb‐alloy Josephson junctionsDeLuca, J. C. / Chi, C. C. / Tsuei, C. C. / Davidson, A. et al. | 1984
- 3823
-
Mechanism of non‐Shockley conduction in almost ideal silicon junction diodesCerofolini, G. F. / Polignano, M. L. et al. | 1984
- 3831
-
Physics of amorphous silicon based alloy field‐effect transistorsShur, M. / Hack, M. et al. | 1984
- 3843
-
GaAs/GaAs1−ySby superlattice light emitting diodesKlem, J. / Fischer, R. / Masselink, W. T. / Kopp, W. / Morkoc¸, H. et al. | 1984
- 3846
-
Experiments in switching the bistable boundary layer liquid crystal display by the application of dcThurston, R. N. / Boyd, G. D. / Senft, Donna Cowell et al. | 1984
- 3856
-
Interaction between boron and intrinsic defects in GaAsElliott, K. R. et al. | 1984
- 3859
-
High resistivity in InP by helium bombardmentFocht, M. W. / Macrander, A. T. / Schwartz, B. / Feldman, L. C. et al. | 1984
- 3863
-
Cryogenic temperature mechanical behavior of solid mercuryPurushothaman, S. / Caulfield, T. et al. | 1984
- 3866
-
Diffusion of carbon atoms in hydrogenated amorphous silicon carbide into hydrogenated amorphous silicon through the interfaceKomuro, Shuji / Aoyagi, Yoshinobu / Segawa, Yusaburo / Namba, Susumu / Masuyama, Akio / Okamoto, Hiroaki / Hamakawa, Yoshihiro et al. | 1984
- 3868
-
Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field‐effect transistorsAsai, H. / Adachi, S. / Ando, S. / Oe, K. et al. | 1984
- 3871
-
Metastable (InP)1−xGe2x alloys as potential materials with band gap &bartil;10 μmJenkins, David W. / Newman, Kathie E. / Dow, John D. et al. | 1984
- 3873
-
Photoluminescence in liquid phase epitaxially grown Hg0.3Cd0.7TeFeldman, Bernard J. / Bajaj, J. / Shin, S. H. et al. | 1984
- 3876
-
Interfacial properties of Al2O3‐InP metal‐insulator‐semiconductor structure prepared in excess organophosphorus atmosphereKobayashi, Takeshi / Ichikawa, Tohru / Sakuta, Ken / Fujisawa, Kazuo et al. | 1984
- 3879
-
Composition and electronic properties of electrochemically deposited CdTe filmsTakahashi, Makoto / Uosaki, Kohei / Kita, Hideaki et al. | 1984
- 3882
-
Electrical characteristics of amorphous molybdenum‐nickel contacts to siliconKung, K. T‐Y. / Suni, I. / Nicolet, M‐A. et al. | 1984
- 3886
-
Effect of oxygen on the photoluminescence of CdS/CdTe thin filmsTang, C. W. / Vazan, F. et al. | 1984
- 3889
-
Free carrier lifetime in semi‐insulating GaAs from time‐resolved band‐to‐band photoluminescenceWeiner, J. S. / Yu, P. Y. et al. | 1984
- 3892
-
Submillimeter detector operation of granular superconducting NbN filmsCarr, G. L. / Karecki, D. R. / Perkowitz, S. et al. | 1984
- 3894
-
Resistivity anisotropy of pyrrhotiteKrontiras, Chr. / Pomoni, K. / Theodossiou, A. et al. | 1984
- 3896
-
Erratum: Luminescence and impurity states in CuInSe2 [J. Appl. Phys. 54, 6634 (1983)]Rinco´n, C. / Gonza´lez, J. / Sa´nchez Pe´rez, G. et al. | 1984