Silicon solar cell with a novel low‐resistance emitter structure (English)
National licence
- New search for: Borden, P. G.
- New search for: Walsh, R. V.
- New search for: Borden, P. G.
- New search for: Walsh, R. V.
In:
Applied Physics Letters
;
41
, 7
;
649-651
;
1982
- Article (Journal) / Electronic Resource
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Title:Silicon solar cell with a novel low‐resistance emitter structure
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Contributors:Borden, P. G. ( author ) / Walsh, R. V. ( author )
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Published in:Applied Physics Letters ; 41, 7 ; 649-651
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Publisher:
- New search for: American Institute of Physics
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Publication date:1982-10-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 41, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 583
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Aging tests of low threshold current InGaAsP/InP V‐grooved substrate buried heterostructure lasers emitting at 1.3‐μm wavelengthImai, Hajime / Ishikawa, Hiroshi / Hori, Ken‐ichi / Takahei, Ken‐ichiro et al. | 1982
- 585
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Laser emission from stimulated spin‐flip Raman scattering in (Cd,Mn)SeHeiman, D. et al. | 1982
- 587
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High‐power low‐divergence superradiance diodeWang, C. S. / Cheng, W. H. / Hwang, C. J. / Burns, W. K. / Moeller, R. P. et al. | 1982
- 590
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Four‐wave mixing via optically generated free carriers in Hg1−xCdxTeYuen, S. Y. et al. | 1982
- 592
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Frequency synchronization and phase locking of CO2 lasersLeeb, Walter R. / Philipp, Heinz K. / Scholtz, Arpad L. / Bonek, Ernst et al. | 1982
- 594
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Optical absorption coefficient of silicon at 1.152 μ at elevated temperaturesJellison, G. E. / Lowndes, D. H. et al. | 1982
- 597
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Frequency stabilization of a diode laser by use of the optogalvanic effectYamaguchi, Shizuo / Suzuki, Masao et al. | 1982
- 599
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Picosecond optical electronic sampling: Characterization of high‐speed photodetectorsAuston, D. H. / Smith, P. R. et al. | 1982
- 601
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Extended gas lifetime operation of a miniature transversely excited atmosphere CO2 laser doped with tripropylamineMarchetti, R. / Penco, E. / Armandillo, E. / Salvetti, G. et al. | 1982
- 604
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Observation of optical signatures of materialsCox, I. J. / Hamilton, D. K. / Sheppard, C. J. R. et al. | 1982
- 607
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Proton exchange for high‐index waveguides in LiNbO3Jackel, J. L. / Rice, C. E. / Veselka, J. J. et al. | 1982
- 609
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Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrateOron, M. / Tamari, N. / Shtrikman, H. / Burrus, C. A. et al. | 1982
- 611
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High‐power nitrogen laserArmandillo, E. / Kearsley, A. J. et al. | 1982
- 614
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Lateral beam collimation of a phased array semiconductor laserScifres, D. / Burnham, R. D. / Streifer, W. / Bernstein, M. et al. | 1982
- 616
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Passive stabilization scheme for fiber interferometers using (3×3) fiber directional couplersKoo, K. P. / Tveten, A. B. / Dandridge, A. et al. | 1982
- 619
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Frequency tuning for stimulated four‐photon mixing by bending‐induced birefringence in a single‐mode fiberKitayama, Ken‐ichi / Ohashi, Masaharu et al. | 1982
- 622
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Transducer effects in acoustic scattering measurementsJohnson, Richard K. / Devaney, A. J. et al. | 1982
- 625
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Spot‐size dependence of laser‐induced damage to diamond‐turned Cu mirrorsLee, C. S. / Koumvakalis, N. / Bass, M. et al. | 1982
- 628
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Profiling of deep impurities by persistent photocurrent measurementsTheodorou, D. E. / Queisser, H. J. / Bauser, E. et al. | 1982
- 630
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Time‐resolved measurements of stimulated surface polariton wave scattering and grating formation in pulsed‐laser‐annealed germaniumEhrlich, D. J. / Brueck, S. R. J. / Tsao, J. Y. et al. | 1982
- 633
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Low‐noise GaAs field‐effect transistor made by molecular beam epitaxyFeng, M. / Eu, V. K. / D’Haenens, I. J. / Braunstein, M. et al. | 1982
- 635
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Toward quantum well wires: Fabrication and optical propertiesPetroff, P. M. / Gossard, A. C. / Logan, R. A. / Wiegmann, W. et al. | 1982
- 638
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Impurity redistribution in GaAs metalorganic vapor phase epilayersHuber, A. M. / Morillot, G. / Bonnet, M. / Merenda, P. / Bessonneau, G. et al. | 1982
- 641
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Hydrogen annealing of silicon gate‐nitride‐oxide‐silicon nonvolatile memory devicesTopich, James A. / Turi, Raymond A. et al. | 1982
- 643
-
Picosecond time‐resolved plasma and temperature‐induced changes of reflectivity and transmission in siliconLiu, J. M. / Kurz, H. / Bloembergen, N. et al. | 1982
- 646
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Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couplesZheng, L. R. / Hung, L. S. / Mayer, J. W. / Majni, G. / Ottaviani, G. et al. | 1982
- 649
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Silicon solar cell with a novel low‐resistance emitter structureBorden, P. G. / Walsh, R. V. et al. | 1982
- 651
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Electrical rectification caused by lamellar microstructures in platinum‐doped TiO2−x ceramicsMeitzler, A. H. / Shinozaki, S. S. / Donlon, W. T. et al. | 1982
- 654
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Palladium and platinum gate metal‐oxide‐semiconductor capacitors in hydrogen and oxygen mixturesArmgarth, M. / So¨derberg, D. / Lundstro¨m, I. et al. | 1982
- 656
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Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratioMorante, J. R. / Carceller, J. E. / Herms, A. / Cartujo, P. / Barbolla, J. et al. | 1982
- 659
-
Nonlinear luminescence and time‐resolved diffusion profiles of photoexcited carriers in semiconductorsOlsson, A. / Erskine, D. J. / Xu, Z. Y. / Schremer, A. / Tang, C. L. et al. | 1982
- 662
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Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAsMatsumoto, Takashi / Bhattacharya, Pallab K. / Ludowise, M. J. et al. | 1982
- 664
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Theory of resonant scattering in semiconductors due to impurity central‐cell potentialsSankey, Otto F. / Dow, John D. / Hess, Karl et al. | 1982
- 667
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Critical currents in the Chevrel‐phase lead molybdenum sulfide thin filmsHamasaki, K. / Inoue, T. / Yamashita, T. / Komata, T. / Sasaki, T. et al. | 1982
- 669
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Compact integrated dc SQUID gradiometerde Waal, V. J. / Klapwijk, T. M. et al. | 1982
- 672
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Role of dangling bonds and antisite defects in rapid and gradual III‐V laser degradationDow, John D. / Allen, Roland E. et al. | 1982