Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution (English)
- New search for: Chen, C. L.
- New search for: Zhou, D. S.
- New search for: Mitchell, T. E.
- New search for: Ye, H. Q.
- New search for: Chen, C. L.
- New search for: Zhou, D. S.
- New search for: Mitchell, T. E.
- New search for: Ye, H. Q.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
14
, 4
;
2551-2553
;
1996
- Article (Journal) / Electronic Resource
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Title:Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solution
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Additional title:β‐TaH phase precipitation
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Contributors:
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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 14, 4 ; 2551-2553
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1996-07-01
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 14, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1973
-
Particle emission debris from a KrF laser–plasma x‐ray sourceBobkowski, R. / Fedosejevs, R. et al. | 1996
- 1981
-
Formation of polytetrafluoroethylene thin films by using CO2 laser evaporation and XeCl laser ablationInayoshi, Muneto / Hori, Masaru / Goto, Toshio / Hiramatsu, Mineo / Nawata, Masahito / Hattori, Shuzo et al. | 1996
- 1986
-
Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric studyMihãilescu, I. N. / Litã, Adriana / Teodorescu, V. S. / Gyorgy, Eniko / Alexandrescu, Rodica / Luches, A. / Martino, M. / Barboricã, A. et al. | 1996
- 1995
-
YBa2Cu3O7−x thin film over 3 in. substrate using off‐axis excimer laser depositionNagaishi, T. / Itozaki, H. et al. | 1996
- 1999
-
Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociationsYamamoto, Y. / Hori, M. / Goto, T. / Hiramatsu, M. et al. | 1996
- 2004
-
Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3Takahashi, Kunimasa / Hori, Masaru / Goto, Toshio et al. | 1996
- 2011
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Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3Takahashi, Kunimasa / Hori, Masaru / Goto, Toshio et al. | 1996
- 2020
-
Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristicsKo, K. K. / Pang, S. W. / Dahimene, M. et al. | 1996
- 2026
-
Ion desorption stability in superconducting high energy physics proton collidersTurner, William C. et al. | 1996
- 2039
-
Diamond‐like carbon film synthesized by ion beam assisted deposition and its tribological propertiesHe, Xiaomimg / Li, Wenzhi / Li, Hengde et al. | 1996
- 2048
-
Radio frequency matching for helicon plasma sourcesRayner, J. P. / Cheetham, A. D. / French, G. N. et al. | 1996
- 2056
-
Reactive ion beam assisted deposition of zirconium oxyfluoride thin filmsGibson, U. J. / Cornett, K. D. et al. | 1996
- 2062
-
Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasmaHan, Sang M. / Aydil, Eray S. et al. | 1996
- 2071
-
Reactor modeling for radio frequency plasma deposition of SiNxHy: Comparison between two reactor designsCaquineau, H. / Dupont, G. / Despax, B. / Couderc, J. P. et al. | 1996
- 2083
-
CFX radical generation by plasma interaction with fluorocarbon films on the reactor wallMiyata, Koji / Hori, Masaru / Goto, Toshio et al. | 1996
- 2088
-
SiOxNy films deposited by remote plasma enhanced chemical vapor deposition using SiCl4Sanchez, O. / Aguilar, M. A. / Falcony, C. / Martinez‐Duart, J. M. / Albella, J. M. et al. | 1996
- 2094
-
Electron‐beam controlled radio frequency discharges for plasma processingKushner, Mark J. / Collison, Wenli Z. / Ruzic, David N. et al. | 1996
- 2102
-
Vacuum ultraviolet emission from radio frequency plasmas of SF6 and CF4Li, Jan / McConkey, J. W. et al. | 1996
- 2106
-
Probe for measuring ion beam angular distributionKahn, J. R. / Kaufman, H. R. / Phillips, C. A. / Robinson, R. S. et al. | 1996
- 2113
-
Spatial distributions of electron density and electron temperature in direct current glow dischargeTao, W. H. / Prelas, M. A. / Yasuda, H. K. et al. | 1996
- 2122
-
Analysis of pulse‐time modulated high‐density dischargesMeyyappan, M. et al. | 1996
- 2127
-
Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processesZhang, Ying / Oehrlein, Gottlieb S. / Bell, Ferdinand H. et al. | 1996
- 2138
-
Ion‐assisted Si/XeF2‐etching: Influence of ion/neutral flux ratio and ion energyVugts, M. J. M. / Hermans, L. J. F. / Beijerinck, H. C. W. et al. | 1996
- 2151
-
Role of nitrogen in the downstream etching of silicon nitrideBlain, M. G. / Meisenheimer, T. L. / Stevens, J. E. et al. | 1996
- 2158
-
Negative ion density in inductively coupled chlorine plasmasHebner, G. A. et al. | 1996
- 2163
-
Characterization of helicon wave plasma designed for direct current sputteringZhang, J. Q. / Setsuhara, Y. / Ariyasu, T. / Miyake, S. et al. | 1996
- 2169
-
Origin of stresses in sputtered elemental and alloy thin filmsHudson, C. / Somekh, R. E. et al. | 1996
- 2175
-
Electrostatic scattering of ionic species in low pressure sputtering of Ti and TiNBackhouse, C. J. / Robbie, K. / Parks, J. / Broughton, J. N. / Dew, S. / Este, G. / Brett, M. J. et al. | 1996
- 2182
-
Discharge characteristics of a facing target sputtering device using unbalanced magnetronsMuralidhar, G. K. / Musil, J. / Kadlec, S. et al. | 1996
- 2187
-
High‐rate magnetron sputteringMusil, J. / Rajský, A. / Bell, A. J. / Matouš, J. / Čepera, M. / Zeman, J. et al. | 1996
- 2192
-
Oxidation‐enhanced roughening of thin Co films during sputtering by O+2 ionsMohadjeri, B. / Petravić, M. / Svensson, B. G. et al. | 1996
- 2202
-
Microstructure of radio frequency sputtered Ag1−xSix alloysLeedy, K. D. / Rigsbee, J. M. et al. | 1996
- 2207
-
Reactive sputter‐deposition and characterization of lead oxide filmsPauleau, Y. / Harry, E. et al. | 1996
- 2215
-
Characteristics of reactively sputtered Pt–SnO2 thin films for CO gas sensorsDi Giulio, M. / Micocci, G. / Serra, A. / Tepore, A. / Rella, R. / Siciliano, P. et al. | 1996
- 2220
-
Postdeposition annealing of radio frequency magnetron sputtered ZnO filmsPuchert, M. K. / Timbrell, P. Y. / Lamb, R. N. et al. | 1996
- 2231
-
Computational modeling of reactive gas modulation in radio frequency reactive sputteringSekiguchi, Hidetoshi / Murakami, Takashi / Kanzawa, Atsushi / Imai, Takahiro / Honda, Takuya et al. | 1996
- 2235
-
Compact‐heating stage for use in sputtering in active oxygen gas environmentsIgarashi, Y. / Fujino, Y. / Takahashi, T. et al. | 1996
- 2238
-
Low‐temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering*Cheng, Chien‐Chuan / Chen, Ying‐Chung / Wang, Horng‐Jwo / Chen, Wen‐Rong et al. | 1996
- 2243
-
Physical properties and chemical states of rf sputter deposited SiWOx filmsShibata, Itaru / Nishide, Toshikazu / Hasegawa, Toshinori et al. | 1996
- 2247
-
Formation of high temperature phases in sputter deposited Ti-based films below 100 (degree)CMusil, J. et al. | 1996
- 2247
-
Formation of high temperature phases in sputter deposited Ti‐based films below 100 °CMusil, J. / Bell, A. J. / Vlček, J. / Hurkmans, T. et al. | 1996
- 2251
-
Cu (In,Ga)Se2 thin films and solar cells prepared by selenization of metallic precursorsBaşol, Bülent M. / Kapur, Vijay K. / Halani, Arvind / Leidholm, Craig R. / Sharp, Jon / Sites, James R. / Swartzlander, Amy / Matson, Richard / Ullal, Harin et al. | 1996
- 2257
-
Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor depositionBuggeln, R. C. / Meyyappan, M. / Shamroth, S. J. et al. | 1996
- 2263
-
Preparation and characterization of a well‐ordered surface on a Si(001) substrate with a buried metal layer for application of infrared reflection spectroscopyKobayashi, Yoshihiro / Sumitomo, Koji / Prabhakaran, Kuniyil / Ogino, Toshio et al. | 1996
- 2269
-
Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxyHernández, L. / de Melo, O. / Meléndez‐Lira, M. / Rivera‐Alvarez, Z. / Hernández‐Calderón, I. et al. | 1996
- 2275
-
Surface‐extended x‐ray absorption fine structure study of silicon deposited onto GaAs(110)Hasnaoui, M. L. / Flank, A. M. / Pompa, M. / Lagarde, P. et al. | 1996
- 2282
-
Adsorption controlled Si(1−x)Gex growth during chemical vapor depositionKühne, H. / Fischer, A. / Morgenstern, Th. / Zaumseil, P. et al. | 1996
- 2289
-
Visualization of a buried organic interface by imaging time‐of‐flight secondary ion mass spectrometry and scanning Auger microprobe of an ion‐beam crater edgeSchamberger, Patrick C. / Jones, Gary L. / Gardella, Joseph A. / McKeown, Patrick J. / Davis, Larry E. et al. | 1996
- 2289
-
Visualization of a buried organic interface by imaging time-of-flight secondary ion mass spectrometry nd scanning Auger microprobe of an ion-beam crater edgeSchamberger, Patrick C. et al. | 1996
- 2303
-
Cleaning thin‐film diamond surfaces for device fabrication: An Auger electron spectroscopic studyBaral, Bhaswar / Chan, Simon S. M. / Jackman, Richard B. et al. | 1996
- 2308
-
Isothermal hydrogen desorption from the diamond (100)2×1 surfaceMcGonigal, M. / Kempel, M. L. / Hammond, M. S. / Jamison, K. D. et al. | 1996
- 2308
-
Isothermal hydrogen desorption from the diamond (100)2x1 surfaceMcGonigal, M. et al. | 1996
- 2315
-
Time‐resolved mass spectrometry in rough vacuum environmentLaimer, J. / Schnabl, O. / Schwärzler, C. G. / Störi, H. et al. | 1996
- 2325
-
Thermal stability of photochemical native oxide films on Hg1−xCdxTeWinton, G. H. / Warrington, N. / Faraone, L. et al. | 1996
- 2331
-
Numerical ellipsometry: Applications of a new algorithm for real‐time, in situ film growth monitoringUrban, Frank K. / Comfort, John Craig et al. | 1996
- 2337
-
Molecular beam sampling to analyze the reaction mechanism of chemical vapor depositionTsutsumi, Y. / Ikegawa, M. / Usui, T. / Ichikawa, Y. / Watanabe, K. / Kobayashi, J. et al. | 1996
- 2343
-
Infrared diode laser absorption spectroscopy measurements of CFX (X=1–3) radical densities in electron cyclotron resonance plasmas employing C4F8, C2F6, CF4, and CHF3 gasesMiyata, Koji / Hori, Masaru / Goto, Toshio et al. | 1996
- 2343
-
Infrared diode laser absorption spectroscopy measurements of CF x) (XMiyata, Koji et al. | 1996
- 2351
-
Atomic force microscopy of amorphous hydrogenated carbon–nitrogen films deposited by radio‐frequency‐plasma decomposition of methane–ammonia gas mixturesPrioli, R. / Zanette, S. I. / Caride, A. O. / Franceschini, D. F. / Freire, F. L. et al. | 1996
- 2356
-
In situ wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopyBooth, J. L. / Beard, B. T. / Stevens, J. E. / Blain, M. G. / Meisenheimer, T. L. et al. | 1996
- 2361
-
Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beamFujinaga, Kiyohisa et al. | 1996
- 2366
-
Surface chemical reaction between polycarbonate and kilo‐electron‐volt energy Ar+ ion in oxygen environmentChoi, Won‐Kook / Koh, Seok‐Keun / Jung, Hyung‐Jin et al. | 1996
- 2372
-
Interaction of water with clean and gallium precovered Fe(111) surfacesJiang, P. / Zappone, M. W. / Bernasek, Steven L. / Robertson, A. et al. | 1996
- 2378
-
Microtribological studies of unlubricated and lubricated surfaces using atomic force/friction force microscopyKoinkar, Vilas N. / Bhushan, Bharat et al. | 1996
- 2392
-
Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopyChilds, Kenton D. / Narum, David / LaVanier, Lori A. / Lindley, Patricia M. / Schueler, Bruno W. / Mulholland, George / Diebold, Alain C. et al. | 1996
- 2392
-
Comparison of submicron particle analysis by Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive X-ray spectroscopy (IC yield)Childs, K.D. / Narum, A.D. / LaVanier, L.A. / Lindley, P.M. / Schueler, B.W. / Mulholland, G. / Diebold, A.C. et al. | 1996
- 2405
-
Recoil spectrometry of thin film reactions in the Pd/InP systemPersson, Leif / El Bouanani, Mohamed / Hult, Mikael / Jönsson, Patrik / Whitlow, Harry J. / Andersson, Margaretha / Georgsson, Kristina / Bubb, Ian F. / Johnston, Peter N. / Walker, Scott R. et al. | 1996
- 2414
-
Focusing glass capillary array molecular beam inlet for a high sensitivity mass spectrometer systemMa, Y. / Liu, B. Y. H. / Lee, H. S. / Mauersberger, K. / Morton, J. et al. | 1996
- 2418
-
Physical properties of diamondlike carbon films deposited in mixed atmospheres of C2H4–Ar, C2H4–H2, and C2H4–N2Nakayama, Masatoshi / Matsuba, Yasuhiro / Shimamura, Junichi / Yamamoto, Yasuyuki / Chihara, Hiroshi / Kato, Hideo / Maruyama, Kazunori / Kamata, Kiichiro et al. | 1996
- 2427
-
Conductance and leakage in superconducting tunnel junctionsGoodchild, M. S. / Barber, Z. H. / Blamire, M. G. et al. | 1996
- 2433
-
Schottky barrier at the Au/Gap (110) interfaceFanfoni, M. / Goletti, C. / Chiaradia, P. / Ng, W. / Cerrina, F. / Hwu, Y. / Terrasi, A. / Margaritondo, G. et al. | 1996
- 2437
-
Characterization of as‐grown and annealed thin SiO2 films formed in 0.1 M HClAllegretto, E. M. / Bardwell, J. A. et al. | 1996
- 2443
-
Solid phase epitaxy with x‐ray irradiation using a compact synchrotron radiation source AURORAKatoh, Takanori / Yamada, Hironari / Sato, Fumio / Hirano, Yoshiyuki / Chikawa, Jun‐ichi et al. | 1996
- 2448
-
Electronic states of a clean Si(110) 16×2 surface studied by angle resolved photoemission and surface differential reflectivityCrincenti, A. / Nesterenko, B. / Perfetti, P. / LeLay, G. / Sebenne, C. et al. | 1996
- 2448
-
Electronic states of a clean Si(110) 16x2 surface studied by angle resolved photoemission and surface differential reflectivityCricenti, A. et al. | 1996
- 2448
-
Electronic states of a clean Si(110) 16x2 surface studied by angle photoemission and surface differential reflectivityCricenti, A. / Nesterenko, B. / Perfetti, P. / LeLay, G. / Sebenne, C. et al. | 1996
- 2454
-
Effect of a surface layer on the stress relaxation of thin filmsThouless, M. D. / Rodbell, K. P. / Cabral, C. et al. | 1996
- 2462
-
Residual macroscopic stress in highly preferentially oriented titanium nitride coatings deposited on various steel typesQuaeyhaegens, C. / Knuyt, G. / Stals, L. M. et al. | 1996
- 2470
-
Changes in refractive index and in chemical state of synchrotron radiation irradiated fluorinated polyimide filmsMaruo, Yasuko Yamada / Sasaki, Shigekuni / Haga, Tsuneyuki / Kinoshita, Hiroo / Horiuchi, Toshiyuki / Tamamura, Toshiaki et al. | 1996
- 2475
-
Photoelectron spectroscopy during pulsed laser melting of surfacesGantner, G. / Boyen, H.‐G. / Oelhafen, P. / Rink, K. et al. | 1996
- 2480
-
Photoluminescence measurements in the phase transition region for CdS thin filmsAriza‐Calderon, H. / Lozada‐Morales, R. / Zelaya‐Angel, O. / Mendoza‐Alvarez, J. G. / Baños, L. et al. | 1996
- 2483
-
Measurement of the elastic stress of thin films deposited on gallium arsenideMihailovich, R. E. / Koscica, T. / Zeto, R. J. et al. | 1996
- 2488
-
Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopyFiron, M. / Bonnelle, C. / Mayeux, A. et al. | 1996
- 2493
-
Strengthening of Al2O3‐based ceramics by metalorganic chemical vapor depositionKonyashin, I. Yu. et al. | 1996
- 2499
-
Effects of Y or Gd addition on the structures and resistivities of Al thin filmsTakayama, Shinji / Tsutsui, Naganori et al. | 1996
- 2505
-
Formation of chromium oxide on 316L austenitic stainless steelOhmi, Tadahiro / Nakagawa, Yoshinori / Nakamura, Masakazu / Ohki, Atushi / Koyama, Tomoyuki et al. | 1996
- 2511
-
Properties of radio frequency–sputtered alumina films on flat and grooved substratesRoss, C. A. et al. | 1996
- 2517
-
Characteristics of Cu thin films on a glass substrate by partially ionized beam deposition at room temperatureYoon, Y. S. / Kim, K. H. / Jang, H. G. / Jung, H. J. / Koh, S. K. et al. | 1996
- 2522
-
Effect of annealing on Ag films on Pt(111)Tsay, J. S. / Shern, C. S. et al. | 1996
- 2527
-
High temperature oxidation of thin CrN coatings deposited on steelMilošev, I. / Abels, J. M. / Strehblow, H.‐H. / Navinšek, B. / Metikoš‐Hukovič, M. et al. | 1996
- 2535
-
Effect of energetic particles on the residual stresses in nonhydrogenated amorphous carbon films deposited on grounded substrates by dc magnetron sputteringMounier, E. / Pauleau, Y. et al. | 1996
- 2544
-
Surface flatness of polished metal single crystalsTripa, C. Emil / Yates, John T. et al. | 1996
- 2547
-
Growth dynamics and surface fine structure of ZnO ultrafine particle filmsDachun, Zhao / Zhongkai, Qu / Xiaoren, Pan et al. | 1996
- 2551
-
Direct observation of b-TaH phase precipitation in tantalum-hydrogen solid solutionChen, C.L. et al. | 1996
- 2551
-
Direct observation of β‐TaH phase precipitation in tantalum–hydrogen solid solutionChen, C. L. / Zhou, D. S. / Mitchell, T. E. / Ye, H. Q. et al. | 1996
- 2554
-
Growth of ultrathin crystalline Al2O3 films on Ru(0001) and Re(0001) surfacesWu, Yutong / Garfunkel, Eric / Madey, Theodore E. et al. | 1996
- 2564
-
Solid‐state reaction of Ti and Ni thin films with aluminum nitrideHe, Xiangjun / Tao, Kun / Fan, Yudian et al. | 1996
- 2570
-
Whiskers grown on aluminum thin films during heat treatmentsHinode, Kenji / Homma, Yoshio / Sasaki, Yasushi et al. | 1996
- 2577
-
Granular superconductor contacts to two‐dimensional electron gasesMarsh, A. M. / Williams, D. A. et al. | 1996
- 2582
-
A critical evaluation of thermal mass flow metersTison, S. A. et al. | 1996
- 2592
-
Measurements of the tangential momentum accommodation coefficient in the transition flow regime with a spinning rotor gaugeGabis, David H. / Loyalka, Sudarshan K. / Storvick, Truman S. et al. | 1996
- 2599
-
Effects of readsorption on outgassing rate measurementsRedhead, P. A. et al. | 1996
- 2610
-
Miniature peristaltic vacuum pump for use in portable instrumentsPiltingsrud, Harley V. et al. | 1996
- 2618
-
Synchrotron radiation induced gas desorption from a Prototype Large Hadron Collider beam screen at cryogenic temperaturesCalder, R. / Gröbner, O. / Mathewson, A. G. / Anashin, V. V. / Dranichnikov, A. / Malyshev, O. B. et al. | 1996
- 2624
-
Vacuum chamber for the wiggler of the Taiwan Light Source at the Synchrotron Radiation Research CenterWang, D. J. / Chen, J. R. / Hsiung, G. Y. / Shyy, J. G. / Huang, J. R. / Hsu, S. N. / Hsiao, K. M. / Liu, Y. C. et al. | 1996
- 2627
-
Rarefied gas flow through a long tube at any temperature ratioSharipov, Felix et al. | 1996
- 2636
-
Outgassing rate characteristic of a stainless‐steel extreme high vacuum systemChun, Inkyu / Cho, Boklae / Chung, Sukmin et al. | 1996
- 2641
-
Outgassing from aluminum surface layer induced by synchrotron radiationOta, N. / Kanazawa, K. / Kobayashi, M. / Ishimaru, H. et al. | 1996
- 2645
-
Secondary ion mass spectroscopy resolution with ultra‐low beam energiesClegg, J. B. / Smith, N. S. / Dowsett, M. G. / Theunissen, M. J. J. / Boer, W. B. de et al. | 1996
- 2651
-
Preparation of crystalline beta barium borate (β‐BaB2O4) thin films by opposed‐targets magnetron sputteringLiao, H. B. / Xiao, R. F. / Yu, P. / Wong, G. K. L. / Zheng, J. Q. et al. | 1996
- 2651
-
Preparation of crystalline beta barium borate ( beta -BaB2O4) thin films by opposed-targets magnetron sputteringLiao, H.B. / Xiao, R.F. / Yu, P. / Wong, G.K.L. / Zheng, J.Q. et al. | 1996
- 2651
-
Preparation of crystalline beta barium borate (b-BaB 2)O4) thin films by opposed-targets magnetron sputteringLiao, H.B. et al. | 1996
- 2655
-
Compact electron cyclotron resonance plasma source for molecular beam epitaxy applicationsRössner, U. / Brun‐Le Cunff, D. / Barski, A. / Daudin, B. et al. | 1996
- 2659
-
IBM‐personal computer data acquisition and processing system to upgrade an out‐of‐date mass spectrometerLópez Callejas, R. / Pozas Cárdenas, M. J. / Cruz Cruz, G. / Meléndez Lugo, L. / Chávez Alarcón, E. / Valencia Alvarado, R. / Olayo González, M. G. / Flores Orta, A. et al. | 1996
- 2662
-
Thermal stability of rapidly annealed CoSi2/n-GaAs and CoSi2/p-lnP Schottky contactsEftekhari, G. et al. | 1996
- 2662
-
Thermal stability of rapidly annealed CoSi~2In-GaAs and CoSi~2/p-InP Schottky contactsEftekhari, G. et al. | 1996
- 2662
-
Thermal stability of rapidly annealed CoSi2/n‐GaAs and CoSi2/p‐InP Schottky contactsEftekhari, G. et al. | 1996
- 2666
-
Temperature dependence of a‐C:H film deposition in a CH4 radio frequency plasmaMutsukura, Nobuki / Saitoh, Kazuhiko et al. | 1996
- 2669
-
Minimum profile ultrahigh vacuum gate valve based on linear/rotary motion feedthroughStolow, Albert et al. | 1996
- 2671
-
Simple, efficient technique for exposing surfaces to hydrogen atomsBermudez, V. M. et al. | 1996
- 2674
-
Hollow‐cathode assisted sputteringBackhouse, C. J. / Dew, S. K. / Brett, M. J. et al. | 1996
- 2677
-
Cheap and stable titanium source for use in oxide molecular beam epitaxy systemsTheis, C. D. / Schlom, D. G. et al. | 1996
- 2680
-
Erratum: Dynamic rate and thickness metrology during poly‐Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry [J. Vac. Sci. Technol. A 14, 267 (1996)]Tedder, L. L. / Rubloff, G. W. / Conaghan, B. F. / Parsons, G. N. et al. | 1996
- 2680
-
Erratum: Modeling the pump‐down of a reversibly adsorbed phase. I. Monolayer and submonolayer coverage [J. Vac. Sci. Technol. A 13, 467 (1995)]Redhead, P. A. et al. | 1996
- 2681
-
CUMULATIVE AUTHOR INDEX| 1996