Subband quantum scattering times for AlGaAs/GaAs obtained using digital filtering (English)
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- New search for: Mena, R. A.
- New search for: Schacham, S. E.
- New search for: Haugland, E. J.
- New search for: Alterovitz, S. A.
- New search for: Bibyk, S. B.
- New search for: Ringel, S. A.
- New search for: Mena, R. A.
- New search for: Schacham, S. E.
- New search for: Haugland, E. J.
- New search for: Alterovitz, S. A.
- New search for: Bibyk, S. B.
- New search for: Ringel, S. A.
In:
Journal of Applied Physics
;
78
, 6
;
3940-3944
;
1995
- Article (Journal) / Electronic Resource
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Title:Subband quantum scattering times for AlGaAs/GaAs obtained using digital filtering
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Contributors:Mena, R. A. ( author ) / Schacham, S. E. ( author ) / Haugland, E. J. ( author ) / Alterovitz, S. A. ( author ) / Bibyk, S. B. ( author ) / Ringel, S. A. ( author )
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Published in:Journal of Applied Physics ; 78, 6 ; 3940-3944
-
Publisher:
- New search for: American Institute of Physics
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Publication date:1995-09-15
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ISSN:
-
DOI:
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Type of media:Article (Journal)
-
Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 78, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3559
-
The effects of ion species and target temperature on topography development on ion bombarded SiCarter, G. / Vishnyakov, V. / Martynenko, Yu. V. / Nobes, M. J. et al. | 1995
- 3566
-
Recording long‐term optical images of a Brownian particle in a Paul trap essentially free of thermally induced positional noiseArnold, S. / Li, J. H. / Holler, S. / Korn, A. / Izmailov, A. F. et al. | 1995
- 3572
-
Simulation of the effect of bulk vacancy diffusion on the shape of sputtered films deposited onto trenches and viasWinterton, S. S. / Smy, T. / Dew, S. K. / Brett, M. J. et al. | 1995
- 3580
-
Transport and centering of high current electron beams in neutral gas filled cellsMyers, M. C. / Antoniades, J. A. / Meger, R. A. / Murphy, D. P. / Fernsler, R. F. / Hubbard, R. F. et al. | 1995
- 3592
-
Passive Q switching and mode‐locking of Er:glass lasers using VO2 mirrorsPollack, S. A. / Chang, D. B. / Chudnovky, F. A. / Khakhaev, I. A. et al. | 1995
- 3592
-
Passive Q switching and mode-locking of Er:glass lasers using VO(sub 2) mirrorsPollack, S.A. et al. | 1995
- 3600
-
Si‐based nanostructure waveguidesTheodorou, G. / Tserbak, C. / Vlachos, N. D. et al. | 1995
- 3605
-
Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wellsYang, G. M. / MacDougal, M. H. / Zhao, H. / Dapkus, P. D. et al. | 1995
- 3610
-
Measurement of linewidths of Ne‐like germanium soft x‐ray laser in slab targetsYuan, Gang / Kato, Y. / Murai, K. / Daido, H. / Kodama, R. et al. | 1995
- 3617
-
Gain characteristics of a high concentration Er3+‐doped phosphate glass waveguideOhtsuki, T. / Peyghambarian, N. / Honkanen, S. / Najafi, S. I. et al. | 1995
- 3622
-
Spatially resolved atomic hydrogen concentrations and molecular hydrogen temperature profiles in the chemical‐vapor deposition of diamondConnell, L. L. / Fleming, J. W. / Chu, H.‐N. / Vestyck, D. J. / Jensen, E. / Butler, J. E. et al. | 1995
- 3635
-
Numerical simulation of streamer–cathode interactionOdrobina, Igor / Cˇerna´k, Mirko et al. | 1995
- 3643
-
Low‐pressure Cs‐Ba discharge. I. Model developmentLuke, James R. / El‐Genk, Mohamed S. et al. | 1995
- 3650
-
Low‐pressure Cs‐Ba discharge. II. Probe measurementsLuke, James R. / El‐Genk, Mohamed S. et al. | 1995
- 3659
-
Optimization of a high‐voltage trigatron switchMitchell, I. H. / Choi, P. / Bayley, J. M. / Chittenden, J. P. / Worley, J. F. et al. | 1995
- 3664
-
Effects of hydrostatic pressure on dopant diffusion in siliconPark, Heemyong / Jones, Kevin S. / Slinkman, Jim A. / Law, Mark E. et al. | 1995
- 3671
-
A technology oriented model for transient diffusion and activation of boron in siliconHo¨fler, A. / Feudel, Th. / Strecker, N. / Fichtner, W. / Stegemann, K.‐H. / Syhre, H. / Dallmann, G. et al. | 1995
- 3680
-
Antisite defects created in neutron irradiated GaP crystalsPalczewska, M. / Jasinski, J. / Korona, K. / Kaminska, M. / Bourret, E. D. / Elliot, A. G. et al. | 1995
- 3686
-
Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiationLai, S. T. / Alexiev, D. / Nener, B. D. et al. | 1995
- 3691
-
Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structuresBykhovski, A. D. / Gelmont, B. L. / Shur, M. S. et al. | 1995
- 3697
-
Quantum‐well intermixing for optoelectronic integration using high energy ion implantationCharbonneau, S. / Poole, P. J. / Piva, P. G. / Aers, G. C. / Koteles, E. S. / Fallahi, M. / He, J.‐J. / McCaffrey, J. P. / Buchanan, M. / Dion, M. et al. | 1995
- 3706
-
Intermixing produced by ion implantation: Case of II–VI semiconductor multilayersKhalal, K. / Chami, A. C. / Ligeon, E. / Fontenille, J. / Hamoudi, A. / Be´rard, G. / Cibert, J. et al. | 1995
- 3714
-
Determination of charge distribution volume in electron irradiated insulators by scanning electron microscopeChen, H. / Gong, H. / Ong, C. K. et al. | 1995
- 3719
-
Exposure of space material insulators to energetic ionsTahara, Hirokazu / Zhang, Lulu / Hiramatsu, Miki / Yasui, Toshiaki / Yoshikawa, Takao / Setsuhara, Yuichi / Miyake, Shoji et al. | 1995
- 3724
-
New model for the thickness and mismatch dependencies of threading dislocation densities in mismatched heteroepitaxial layersAyers, J. E. et al. | 1995
- 3727
-
Gettering of metals by voids in siliconRaineri, V. / Fallica, P. G. / Percolla, G. / Battaglia, A. / Barbagallo, M. / Campisano, S. U. et al. | 1995
- 3736
-
High‐speed photography of compressive failure waves in glassesBourne, N. K. / Rosenberg, Z. / Field, J. E. et al. | 1995
- 3740
-
Dislocation multiplication behind the shock frontZaretsky, E. et al. | 1995
- 3748
-
A new global equation of state model for hot, dense matterYoung, David A. / Corey, Ellen M. et al. | 1995
- 3756
-
The electromigration short‐length effect in Ti‐AlCu‐Ti metallization with tungsten studsFilippi, R. G. / Biery, G. A. / Wachnik, R. A. et al. | 1995
- 3769
-
Recovery of electric resistance degraded by electromigrationOhfuji, Shin‐ichi / Tsukada, Mitsuo et al. | 1995
- 3776
-
Low filament temperature deposition of a‐Si:H by hot‐wire chemical vapor depositionBrogueira, P. / Conde, J. P. / Arekat, S. / Chu, V. et al. | 1995
- 3784
-
Growth of nodular defects during film depositionDubost, Laurent / Rhallabi, Ahmed / Perrin, Je´roˆme / Schmitt, Jacques et al. | 1995
- 3792
-
Manipulation of nucleation by growth rate modulationLarsson, Mats I. / Ni, Wei‐Xin / Hansson, Go¨ran V. et al. | 1995
- 3797
-
Laser‐induced surface structures on diamond filmsTosin, P. / Blatter, A. / Lu¨thy, W. et al. | 1995
- 3801
-
Stability of ammonium fluoride‐treated Si(100)Houston, Michael R. / Maboudian, Roya et al. | 1995
- 3809
-
Crystallinity and average grain size of films grown by chemical vapor depositionKim, S. K. / Lee, Hong H. et al. | 1995
- 3812
-
Growth textures of thick sputtered films and multilayers assessed via synchrotron transmission LaueVill, M. A. / Rek, Z. U. / Yalisove, S. M. / Bilello, J. C. et al. | 1995
- 3820
-
Ar+ bombardment of Si(100) in oxygen atmosphere: Room temperature oxide formation studied by x‐ray photoelectron spectroscopyTerrasi, A. / Coluzza, C. / Margaritondo, G. et al. | 1995
- 3824
-
Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substratesTillmann, K. / Gerthsen, D. / Pfundstein, P. / Fo¨rster, A. / Urban, K. et al. | 1995
- 3833
-
Extensions of thermal grooving for arbitrary grain‐boundary fluxKlinger, L. M. / Glickman, E. E. / Fradkov, V. E. / Mullins, W. W. / Bauer, C. L. et al. | 1995
- 3839
-
On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadiumJenny, J. R. / Skowronski, M. / Mitchel, W. C. / Hobgood, H. M. / Glass, R. C. / Augustine, G. / Hopkins, R. H. et al. | 1995
- 3843
-
Theory of EL2 and EL5 formation in melt‐grown GaAs:SiMorrow, Richard A. et al. | 1995
- 3846
-
Band offsets and optical bowings of chalcopyrites and Zn‐based II‐VI alloysWei, Su‐Huai / Zunger, Alex et al. | 1995
- 3857
-
Theoretical study of the quasistatic capacitance of metal–insulator–semiconductor structures in amorphous semiconductorsKleider, J. P. / Mencaraglia, D. et al. | 1995
- 3867
-
The effects of oxygen and defects on the deep‐level properties of Er in crystalline SiLibertino, S. / Coffa, S. / Franzo´, G. / Priolo, F. et al. | 1995
- 3874
-
The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline siliconPriolo, F. / Franzo`, G. / Coffa, S. / Polman, A. / Libertino, S. / Barklie, R. / Carey, D. et al. | 1995
- 3874
-
The erbium-impurity interaction and its effects on the 1.54 mm luminescence of Er3+ in crystalline siliconPriolo, F. et al. | 1995
- 3883
-
Mechanism for stress‐induced leakage currents in thin silicon dioxide filmsDiMaria, D. J. / Cartier, E. et al. | 1995
- 3895
-
Photoelectric properties of Ag–As–S glassesTanaka, K. / Itoh, M. / Yoshida, N. / Ohto, M. et al. | 1995
- 3902
-
Structural and electronic transport properties of ReSi2−δ single crystalsGottlieb, U. / Lambert‐Andron, B. / Nava, F. / Affronte, M. / Laborde, O. / Rouault, A. / Madar, R. et al. | 1995
- 3902
-
Structural and electronic transport properties of ReSi2 - d) single crystalsGottlieb, U. et al. | 1995
- 3902
-
Structural and electronic transport properties of ReSi(2-delta) single crystalsGottlieb, U. / Lambert-Andron, B. / Nava, F. / Affronte, M. / Laborde, O. / Rouault, A. / Madar, R. et al. | 1995
- 3908
-
Thermally stimulated currents in CdTe polycrystalline filmsRami´rez‐Bon, R. / Espinoza‐Beltra´n, F. J. / Vigil, O. / Zelaya‐Angel, O. / Sa´nchez‐Sinencio, F. / Mendoza‐Alvarez, J. G. / Stolik, D. et al. | 1995
- 3912
-
The low electric field conduction mechanism of silicon oxide‐silicon nitride‐silicon oxide interpoly‐Si dielectricsMaruyama, T. / Shirota, R. et al. | 1995
- 3915
-
Properties of silicon‐tin alloys prepared by pulsed laser depositionSiebentritt, Susanne / Treece, Randolph E. / Williams, R. Stanley et al. | 1995
- 3920
-
Schottky barriers on anodic‐sulfide‐passivated GaAs and their stabilityChen, Z. / Kim, W. / Salvador, A. / Mohammad, S. N. / Aktas, O. / Morkoc¸, H. et al. | 1995
- 3925
-
Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum‐well lasersIssanchou, O. / Barrau, J. / Idiart‐Alhor, E. / Quillec, M. et al. | 1995
- 3931
-
Mechanism of carrier transport through a silicon‐oxide layer for 〈indium‐tin‐oxide/silicon‐oxide/silicon〉 solar cellsKobayashi, H. / Ishida, T. / Nakato, Y. / Mori, H. et al. | 1995
- 3931
-
Mechanism of carrier transport through a silicon-oxide layer for solar cellsKobayashi, H. et al. | 1995
- 3940
-
Subband quantum scattering times for AlGaAs/GaAs obtained using digital filteringMena, R. A. / Schacham, S. E. / Haugland, E. J. / Alterovitz, S. A. / Bibyk, S. B. / Ringel, S. A. et al. | 1995
- 3945
-
Electronic conductivity of hydrogenated nanocrystalline silicon filmsHu, G. Y. / O’Connell, R. F. / He, Y. L. / Yu, M. B. et al. | 1995
- 3949
-
Comparative study of properties between a‐GeC:H and a‐SiC:H films prepared by radio‐frequency reactive sputtering in methaneSaito, N. / Yamaguchi, T. / Nakaaki, I. et al. | 1995
- 3955
-
Electrical properties of heavily doped μc‐Si:HDi Nocera, Anna / Mittiga, Alberto / Rubino, Alfredo et al. | 1995
- 3955
-
Electrical properties of heavily doped mc-Si:HNocera, Anna Di et al. | 1995
- 3955
-
Electrical properties of heavily doped microcrystalline-Si:HDi Nocera, A. / Mittiga, A. / Rubino, A. et al. | 1995
- 3961
-
Magnetization processes in samples with modulated anisotropy under the action of nonuniform magnetic fieldsGarci´a, A. / Lo´pez, E. / Aroca, C. / Sa´nchez, M. C. / Sa´nchez, P. et al. | 1995
- 3965
-
Switching in single domain nanostructures at finite temperaturesChui, S. T. / Tian, De‐Cheng et al. | 1995
- 3980
-
Specific heat of YCo12B6 and GdCo12B6 intermetallicsNahm, Kyun / Kim, Chul Koo / Mittag, M. / Jeong, Yoon Hee et al. | 1995
- 3983
-
Frequency dispersion and temperature variation of complex permeability of Ni‐Zn ferrite composite materialsTsutaoka, Takanori / Ueshima, Masahiro / Tokunaga, Toshihiko / Nakamura, Tatsuya / Hatakeyama, Kenichi et al. | 1995
- 3992
-
Ferromagnetic resonance studies of Fe/Ni and Fe/CoNbZr multilayers: Model and experimentsAcharya, B. Ramamurthy / Prasad, Shiva / Venkataramani, N. / Kaabouchi, M. / Krishnan, R. / Sella, C. et al. | 1995
- 3999
-
A theoretical consideration of the dielectric behaviors of ferrofluid subjected to a magnetic fieldZhang, Qi / Wang, Jianhua / Zhu, Hesun et al. | 1995
- 4003
-
Modeling the optical dielectric function of II‐VI compound CdTeKim, Charles C. / Sivananthan, S. et al. | 1995
- 4011
-
Modulation of excitonic reflectance at GaAs/GaAs interfacesNovikov, A. B. / Ro¨ppischer, H. / Stein, N. / Novikov, B. V. et al. | 1995
- 4015
-
Impurity photoionization in the presence of a static electric field: Phonon coupling and non‐uniform electric field effectsLamouche, Guy / Le´pine, Yves et al. | 1995
- 4020
-
Visible light emission from thin films containing Si, O, N, and HAugustine, B. H. / Irene, E. A. / He, Y. J. / Price, K. J. / McNeil, L. E. / Christensen, K. N. / Maher, D. M. et al. | 1995
- 4031
-
Strain‐induced shift in photoluminescence energy in In0.2Ga0.8As/GaAs quantum wiresTentarelli, E. S. / Reed, J. D. / Chen, Y.‐P. / Schaff, W. J. / Eastman, L. F. et al. | 1995
- 4035
-
Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layersChen, K. L. / Lin, H. H. / Jan, G. J. / Chen, Y. H. / Tseng, P. K. et al. | 1995
- 4039
-
Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructuresSouifi, A. / Benyattou, T. / Guillot, G. / Bre´mond, G. / Dutartre, D. / Warren, P. et al. | 1995
- 4046
-
Carrier‐density‐independent radiative constant in 1.3 μm buried heterostructure lasersFlynn, E. J. et al. | 1995
- 4046
-
Carrier-density-independent radiative constant in 1.3 mm buried heterostructure lasersFlynn, E.J. et al. | 1995
- 4054
-
Calculation of the magnetic susceptibility and the Verdet constant in neodymium trifluorideLiu, Gongqiang / Yuan, Bin / Zhang, Ninggao / Gong, Xiaoyan et al. | 1995
- 4060
-
Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopyDrews, D. / Sahm, J. / Richter, W. / Zahn, D. R. T. et al. | 1995
- 4066
-
Correlation between the Cu‐related luminescent center and a deep level in siliconErzgra¨ber, H. B. / Schmalz, K. et al. | 1995
- 4069
-
Site symmetry analysis of the 738 nm defect in diamondBrown, S. W. / Rand, S. C. et al. | 1995
- 4076
-
Dielectric tensor characterization and evaluation of several magneto‐optical recording mediaFu, Hong / Yan, Zheng / Lee, Seh Kwang / Mansuripur, M. et al. | 1995
- 4091
-
Al intermediate oxidation states observed by core level photoemission spectroscopyFaraci, G. / La Rosa, S. / Pennisi, A. R. / Hwu, Y. / Margaritondo, G. et al. | 1995
- 4099
-
Spot‐size‐dependent bifurcation of laser‐ablated plumesWitanachchi, S. / Mukherjee, P. et al. | 1995
- 4104
-
Copper nitride thin films prepared by radio‐frequency reactive sputteringMaruyama, Toshiro / Morishita, Tomonori et al. | 1995
- 4108
-
Experimental results of photothermal microstructural depth profilingLan, T. T. N. / Seidel, U. / Walther, H. G. / Goch, G. / Schmitz, B. et al. | 1995
- 4112
-
Effects of process parameters on low‐temperature silicon homoepitaxy by ultrahigh‐vacuum electron‐cyclotron‐resonance chemical‐vapor depositionTae, Heung‐Sik / Hwang, Seok‐Hee / Park, Sang‐June / Yoon, Euijoon / Whang, Ki‐Woong et al. | 1995
- 4118
-
The formation of ternary compound Fe3Mo3C by ball millingDi, L. M. / Calka, A. / Li, Z. L. / Williams, J. S. et al. | 1995
- 4118
-
The formation of ternary compound Fe~3M0~3C by ball millingDi, L. M. / Calka, A. / Li, Z. L. / Williams, J. S. et al. | 1995
- 4123
-
Pulsed laser deposition of diamond‐like amorphous carbon films from graphite and polycarbonate targetsVoevodin, A. A. / Laube, S. J. P. / Walck, S. D. / Solomon, J. S. / Donley, M. S. / Zabinski, J. S. et al. | 1995
- 4131
-
Chemical oxidation of hydrogen passivated Si(111) surfaces in H2O2Neuwald, U. / Feltz, A. / Memmert, U. / Behm, R. J. et al. | 1995
- 4137
-
A numerical model for the calculation of the growth velocity of nonisothermal parabolic dendritesMullis, Andrew M. et al. | 1995
- 4144
-
Growth of diamond films using an enclosed combustion flameMorrison, Philip W. / Somashekhar, Ambika / Glass, Jeffrey T. / Prater, John T. et al. | 1995
- 4157
-
Explanation of spurious features in tungsten deposition using an atomic momentum modelSmy, T. / Salahuddin, M. / Dew, S. K. / Brett, M. J. et al. | 1995
- 4164
-
Spectroscopic ellipsometry studies of very thin thermally grown SiO2 films: Influence of oxidation procedure on oxide quality and stressBoultadakis, S. / Logothetidis, S. / Papadopoulos, A. / Vouroutzis, N. / Zorba, Ph. / Girginoudi, D. / Thanailakis, A. et al. | 1995
- 4174
-
Nuclear‐magnetic‐resonance characterization of doped SiO2 films used in integrated circuitsSchilling, Frederic C. / Steiner, Kurt G. / Obeng, Yaw S. et al. | 1995
- 4183
-
On the conductivity model for the electrorheological response of dielectric particles with a conducting filmTang, X. / Wu, C. / Conrad, H. et al. | 1995
- 4189
-
Friction force microscopy study of lubricant thin films on thin‐film magnetic recording mediaFujiwara, Ichiro / Kamei, Takahiro / Tanaka, Koichi et al. | 1995
- 4196
-
High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor depositionSoga, T. / Kato, T. / Yang, M. / Umeno, M. / Jimbo, T. et al. | 1995
- 4200
-
Base transit time of GaN/InGaN heterojunction bipolar transistorsMohammad, S. N. / Morkoc¸, H. et al. | 1995
- 4206
-
A stiction model for a head‐disk interface of a rigid disk driveGui, Jing / Marchon, Bruno et al. | 1995
- 4218
-
Epitaxial YBa2Cu3O7−δ air‐bridge microbolometers on silicon substratesBarth, R. / Siewert, J. / Jaekel, C. / Spangenberg, B. / Kurz, H. / Prusseit, W. / Utz, B. / Wolf, H. et al. | 1995
- 4218
-
Epitaxial YBa2Cu3O(7-delta) air-bridge microbolometers on silicon substratesBarth, R. / Siewert, J. / Jaekel, C. / Spangenberg, B. / Kurz, H. / Prusseit, W. / Utz, B. / Wolf, H. et al. | 1995
- 4218
-
Epitaxial YBa2Cu3O7 - d air-bridge microbolometers on silicon substratesBarth, R. et al. | 1995
- 4222
-
Illumination effects in high impedance InSb photodiodesFastow, R. et al. | 1995
- 4227
-
GaAs to InP wafer fusionRam, R. J. / Dudley, J. J. / Bowers, J. E. / Yang, L. / Carey, K. / Rosner, S. J. / Nauka, K. et al. | 1995
- 4238
-
Simulation of the optical effects of particles residing on top antireflective coatings for KrF positive photoresist filmsKamoshida, Mototaka / Inui, Hirotomo / Ohta, Toshiyuki / Kasama, Kunihiko et al. | 1995
- 4244
-
Nondegenerate continuum model for polymer light‐emitting diodesDavids, P. S. / Saxena, A. / Smith, D. L. et al. | 1995
- 4253
-
Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent deviceLee, Y. H. / Kim, D. H. / Ju, B. K. / Song, M. H. / Hahn, T. S. / Choh, S. H. / Oh, M. H. et al. | 1995
- 4258
-
Insufficient oxidation in pulsed laser depositionHiratani, Masahiko / Imagawa, Kazushige / Takagi, Kazumasa et al. | 1995
- 4261
-
Deep levels in nitrogen‐implanted n‐type GaAsChen, K. M. / Jia, Y. Q. / Chen, Y. / Li, A. P. / Jin, S. X. / Liu, H. F. et al. | 1995
- 4264
-
Blue electroluminescent devices based on soluble poly(p‐pyridine)Gebler, D. D. / Wang, Y. Z. / Blatchford, J. W. / Jessen, S. W. / Lin, L.‐B. / Gustafson, T. L. / Wang, H. L. / Swager, T. M. / MacDiarmid, A. G. / Epstein, A. J. et al. | 1995
- 4267
-
Diamond‐like carbon films deposited by laser ablation using frozen acetylene targetsHanabusa, Mitsugu / Tsujihara, Kiyohito et al. | 1995
- 4270
-
Raman scattering study of the longitudinal optical phonons in ZnSe–ZnS strained‐layer superlatticesGuan, Z. P. / Fan, X. W. / Xia, H. / Jiang, S. S. et al. | 1995
- 4273
-
Molecular structure of porous SiAnaple, G. / Burrows, R. / Wu, Y. / Boolchand, P. / Adar, F. et al. | 1995
- 4276
-
Sulfur and hydrogen passivation effects on thermal stability of RuO2 Schottky contact on n‐type GaAsKim, Eun Kyu / Son, Maeng Ho / Park, Young Ju / Lee, Jeong‐Gun / Min, Suk‐Ki et al. | 1995
- 4279
-
Neodymium‐doped GaAs light‐emitting diodesChang, S. J. et al. | 1995
- 4282
-
Hydrogen‐induced quantum confinement in amorphous siliconO’Leary, Stephen K. / Zukotynski, Stefan / Perz, John M. et al. | 1995
- 4285
-
Photoreflectance of single buried Si1−xGex epilayers (0.12<x<0.24)Carline, R. T. / Hosea, T. J. C. / Hall, D. J. et al. | 1995
- 4285
-
Photoreflectance of single buried Si~1~-~xGe~x epilayers (0.12 < x < 0.24Carline, R. T. / Hosea, T. J. C. / Hall, D. J. et al. | 1995
- 4288
-
Femtosecond photoinduced dichroism in polydiacetylene 4bcmu filmZheng, L. X. / Feng, Z. G. / Knopf, F. Carl et al. | 1995
- 4291
-
Structure and resistivity of vacancy‐ordered Sr2Ti2O5 films in high‐Tc superconducting heterostructuresDiao, Chien Chen / Oya, Gin‐ichiro et al. | 1995
- 4291
-
Structure and resistivity of vacancy-ordered Sr2Ti2O5 films on high-Tc superconducting heterostructuresChien Chen Diao / Oya, G. et al. | 1995
- 4291
-
Structure and resistivity of vacancy-ordered Sr2Ti2O(sub 5) films in high-Tc superconducting heterostructuresDiao, Chien Chen et al. | 1995
- 4294
-
Lateral mode behavior of reactive‐ion‐etched stable‐resonator semiconductor lasersBiellak, Stephen A. / Sun, Yan / Wong, S. Simon / Siegman, Anthony E. et al. | 1995
- 4297
-
Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formationVanhellemont, Jan et al. | 1995
- 4300
-
Comment on ‘‘Equation of state for extrapolation of high‐pressure shock Hugoniot data’’ [J. Appl. Phys. 65, 3852 (1989)]Johnson, J. B. et al. | 1995
- 4303
-
CUMULATIVE AUTHOR INDEX| 1995