A wire electronic discharge machine saddle‐type deflector for electron beam lithography systems (English)
- New search for: Hanying, Liu
- New search for: Wenjian, Tang
- New search for: Hanying, Liu
- New search for: Wenjian, Tang
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
7
, 1
;
86-88
;
1989
- Article (Journal) / Electronic Resource
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Title:A wire electronic discharge machine saddle‐type deflector for electron beam lithography systems
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Additional title:Wire EDM for EBLS
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Contributors:Hanying, Liu ( author ) / Wenjian, Tang ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1989-01-01
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 7, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Oxygen plasma etching for resist stripping and multilayer lithographyHartney, M. A. / Hess, D. W. / Soane, D. S. et al. | 1989
- 14
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Polymer deposition and etching mechanisms in C2F6 radio‐frequency plasma as studied by laser‐induced fluorescenceKitamura, Mamoru / Akiya, Hideo / Urisu, Tsuneo et al. | 1989
- 19
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Ion beam assisted chemical etching of Si by SF6Affolter, K. et al. | 1989
- 24
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Examination of fluorocarbon‐based plasmas used in the selective and uniform etching of silicon dioxide by response‐surface methodology: Effects of helium additionRiley, Paul E. / Kulkarni, Vivek D. / Bishop, Sally H. et al. | 1989
- 35
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Detection of dry etching product species with in situ Fourier transform infrared spectroscopyCleland, T. A. / Hess, D. W. et al. | 1989
- 41
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Reactive ion etching of GaAs and AlGaAs in a BCl3–Ar dischargeCooperman, S. S. / Choi, H. K. / Sawin, H. H. / Kolesar, D. F. et al. | 1989
- 47
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Replicated resist pattern resolution with synchrotron orbital radiationSuzuki, M. / Kaneko, T. / Saitoh, Y. et al. | 1989
- 55
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Two‐layer resist fabrication by new portable conformable masking i‐line lithographyEndo, M. / Sasago, M. / Hirai, Y. / Ueno, A. / Nomura, N. et al. | 1989
- 59
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Microwave plasma etching of Si and SiO2 in halogen mixtures: Interpretation of etching mechanismsPelletier, J. / Cooke, M. J. et al. | 1989
- 68
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Poly(methacrylic anhydride) positive electron beam resistMiller, Leroy J. / Brault, Robert G. / Granger, Diana D. / Jensen, John E. / Ast, Camille I. van / Lewis, Margaret M. et al. | 1989
- 73
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A study of electron beam metrology using computer simulationTakeuchi, S. / Nakamura, H. / Watakabe, Y. / Mimura, R. / Aihara, R. / Thompson, W. B. et al. | 1989
- 79
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Optical system for a low‐energy focused ion beamAihara, R. / Kasahara, H. / Sawaragi, H. / Shearer, M. H. / Thompson, W. B. et al. | 1989
- 83
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Deflection for scanning ion beam systemsSlingerland, H. N. et al. | 1989
- 86
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A wire electronic discharge machine saddle‐type deflector for electron beam lithography systemsHanying, Liu / Wenjian, Tang et al. | 1989
- 89
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Focused ion beam lithography using Al2O3 as a resist for fabrication of x‐ray masksOhta, Tsuneaki / Kanayama, Toshihiko / Tanoue, Hisao / Komuro, Masanori et al. | 1989
- 93
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The effect of LaB6 cathode shape on its performance in a JBX 5DII electron beam lithography systemTennant, D. M. / Swanson, L. W. et al. | 1989
- 98
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Electron optical performance of electron beam lithography columns predicted by a simple modelLangner, Guenther / Stickel, Werner et al. | 1989
- 104
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On the gate capacitance of metal–oxide semiconductor structures in N‐channel inversion layers on ternary chalcopyrite semiconductorsGhatak, K. P. / Biswas, S. et al. | 1989
- 111
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Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of InGaAs single quantum wells on GaAsRadulescu, D. C. / Schaff, W. J. / Eastman, L. F. / Ballingall, J. M. / Ramseyer, G. O. / Hersee, S. D. et al. | 1989
- 116
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Embedded growth of gallium arsenide in silicon recesses for a coplanar GaAs on Si technologyLiang, J. B. / De Boeck, J. / Deneffe, K. / Arent, D. J. / Van Hoof, C. / Vanhellemont, J. / Borghs, G. et al. | 1989
- 120
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Boron diffusion within TaSi2 /poly‐Si gatesSchwalke, U. / Mazuré, C. / Neppl, F. et al. | 1989
- 127
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Via hole filling with gold melting by KrF excimer laser irradiationSpiess, W. / Strack, H. et al. | 1989
- 129
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Ultraviolet–ozone cleaning of silicon surfaces studied by Auger spectroscopyKrusor, B. S. / Biegelsen, D. K. / Yingling, R. D. / Abelson, J. R. et al. | 1989
- 130
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On rapid thermal processing with quenching under controlled ambient or vacuum conditionsKatz, A. / Albin, M. / Komem, Y. et al. | 1989