Hot jet etching of GaAs and Si (English)
- New search for: Geis, M. W.
- New search for: Efremow, N. N.
- New search for: Lincoln, G. A.
- New search for: Geis, M. W.
- New search for: Efremow, N. N.
- New search for: Lincoln, G. A.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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4
, 1
;
315-317
;
1986
- Article (Journal) / Electronic Resource
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Title:Hot jet etching of GaAs and Si
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Additional title:Hot jet etching
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Contributors:
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1986-01-01
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 4, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Anisotropic etching of silicon using an SF6/Ar microwave multipolar plasmaPomot, C. / Mahi, B. / Petit, B. / Arnal, Y. / Pelletier, J. et al. | 1986
- 6
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Spatial dependence of the optical emission intensities from CF4+O2 plasmasKawata, H. / Murata, K. / Nagami, K. et al. | 1986
- 10
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Linewidth control with masked ion beam lithography using stencil masksRandall, J. N. / Bromley, E. I. / Economou, N. P. et al. | 1986
- 15
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The mechanism of overhang formation in diazide/novolak photoresist film by chlorobenzene soak processMimura, Yoshiaki et al. | 1986
- 22
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Epitaxial growth from organometallic sources in high vacuumFraas, L. M. / McLeod, P. S. / Partain, L. D. / Cape, J. A. et al. | 1986
- 30
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Surface morphologies of GaAs layers grown by arsenic‐pressure‐controlled molecular beam epitaxyWang, Y. H. / Liu, W. C. / Chang, C. Y. / Liao, S. A. et al. | 1986
- 37
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Measurement of the conduction band discontinuities of InGaAsP/InP heterojunctions using capacitance–voltage analysisForrest, S. R. / Schmidt, P. H. / Wilson, R. B. / Kaplan, M. L. et al. | 1986
- 45
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Erratum: Heterojunction band discontinuity at the Si–Ge interface [J. Vac. Sci. Technol. B 3, 1252 (1985)]Mahowald, P. H. / List, R. S. / Spicer, W. E. / Woicik, J. / Pianetta, P. et al. | 1986
- 61
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Artificial neural networks for computingJackel, L. D. / Howard, R. E. / Graf, H. P. / Straughn, B. / Denker, J. S. et al. | 1986
- 64
-
Development of nanometric electron‐beam lithography system (JBX‐5D II)Shearer, M. Hassel / Takemura, H. / Isobe, M. / Goto, N. / Tanaka, K. / Miyauchi, S. et al. | 1986
- 68
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EBS‐5: A vector scan electron‐beam lithography system for research applicationsRiemenschneider, P. / Bui, Q. / Grohs, A. / Jenzen, C. / Landmeier, P. / Morgan, D. / Cumming, D. / Purvis, M. et al. | 1986
- 73
-
Experimental results from fast electron pattern generator: A variable shaped beam machinede Chambost, E. / Allanos, B. / Frichet, A. / Perrocheau, J. et al. | 1986
- 78
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Fast electron pattern generator–high resolution: A variable shaped beam system for submicron writingde Chambost, E. / Frichet, A. / Chartier, M. / The, H. Ta / Trotel, J. et al. | 1986
- 83
-
Critical Koehler illumination for shaped beam lithographyEssig, Manfred / Pfeiffer, H. C. et al. | 1986
- 86
-
Lithography with the scanning tunneling microscopeMcCord, M. A. / Pease, R. F. W. et al. | 1986
- 89
-
A 1 : 1 electron stepperWard, R. / Franklin, A. R. / Lewin, I. H. / Gould, P. A. / Plummer, M. J. et al. | 1986
- 94
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Repair techniques for silicon transmission masks used for submicron lithographyBehringer, U. F. W. / Vettiger, P. et al. | 1986
- 100
-
An electron image projection stepperLivesay, W. R. / Anderson, L. B. et al. | 1986
- 105
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Design, technology, and behavior of a silicon avalanche cathodeHoeberechts, A. M. E. / van Gorkom, G. G. P. et al. | 1986
- 108
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Performance of silicon cold cathodesvan Gorkom, G. G. P. / Hoeberechts, A. M. E. et al. | 1986
- 112
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The effect of oxygen pressure on volatility and morphology of LaB6 single crystal cathodesDavis, P. R. / Schwind, G. A. / Swanson, L. W. et al. | 1986
- 116
-
A hydrogen field ion source with focusing opticsLewis, G. N. / Paik, H. / Mioduszewski, J. / Siegel, B. M. et al. | 1986
- 120
-
High resolution structuring of emitter tips for the gaseous field ionization sourceKubby, Joel A. / Siegel, Benjamin M. et al. | 1986
- 126
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The performance of a microwave ion source immersed in a multicusp static magnetic fieldDahimene, M. / Asmussen, J. et al. | 1986
- 131
-
Current density distribution in a chromatically limited electron microprobeTuggle, D. W. / Swanson, L. W. / Gesley, M. A. et al. | 1986
- 135
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Upper bound of the beam energy broadening in acceleration regionSasaki, Tateaki et al. | 1986
- 140
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Aberrations of electrostatic systems with machining errorTsumagari, T. / Murakami, J. / Ohiwa, H. / Noda, T. et al. | 1986
- 143
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Control electronics for a new submicron ion probe systemOhnishi, T. / Okutani, T. / Hata, K. / Ohiwa, H. / Noda, T. / Hosaka, S. et al. | 1986
- 148
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A statistical analysis of ultraviolet, x‐ray, and charged‐particle lithographiesSmith, Henry I. et al. | 1986
- 154
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New techniques for modeling focused ion beamsNarum, D. H. / Pease, R. F. W. et al. | 1986
- 159
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Proximity effect correction calculations by the integral equation approximate solution methodPavkovich, J. M. et al. | 1986
- 164
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Proximity effect reduction in high voltage electron‐beam lithography by bias exposure methodNishimura, E. / Takigawa, T. / Abe, T. / Katoh, Y. et al. | 1986
- 168
-
Transform based proximity corrections: Experimental results and comparisonsHaslam, M. E. / McDonald, J. F. et al. | 1986
- 176
-
The focused ion beam as an integrated circuit restructuring toolMelngailis, J. / Musil, C. R. / Stevens, E. H. / Utlaut, M. / Kellogg, E. M. / Post, R. T. / Geis, M. W. / Mountain, R. W. et al. | 1986
- 181
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Integrated circuit repair using focused ion beam millingHarriott, L. R. / Wagner, A. / Fritz, F. et al. | 1986
- 185
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Integrated circuit diagnosis using focused ion beamsShaver, D. C. / Ward, B. W. et al. | 1986
- 189
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Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAsMiyauchi, Eizo / Morita, Tetsuo / Takamori, Akira / Arimoto, Hiroshi / Bamba, Yasuo / Hashimoto, Hisao et al. | 1986
- 194
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Ion projection lithography machine IPLM‐01: A new tool for sub‐0.5‐micron modification of materialsStengl, G. / Löschner, H. / Maurer, W. / Wolf, P. et al. | 1986
- 201
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The contrast of ion beam stencil masksRandall, J. N. / Stern, L. A. / Donnelly, J. P. et al. | 1986
- 205
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Unique resist profiles with Be and Si focused ion beam lithographyMorimoto, Hiroaki / Onoda, Hiroshi / Kato, Takaaki / Sasaki, Yoshinobu / Saitoh, Kazunori / Kato, Tadao et al. | 1986
- 209
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The effects of local electric fields and specimen geometry on voltage contrast in the scanning electron microscopeWager, William E. / Wolf, Edward D. et al. | 1986
- 213
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Shot noise limits to measurement accuracy and bandwidth in electron‐beam testingSpicer, D. F. / Sackett, J. N. et al. | 1986
- 217
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Magnetic field extraction of secondary electrons for accurate integrated circuit voltage measurementGarth, S. C. J. / Nixon, W. C. / Spicer, D. F. et al. | 1986
- 221
-
High flatness mask for step and repeat x‐ray lithographySuzuki, K. / Matsui, J. et al. | 1986
- 226
-
Effects of stress on the stability of x‐ray masksKarnezos, M. et al. | 1986
- 230
-
Influence of absorber stress on the precision of x‐ray masksMüller, K.‐H. / Tischer, P. / Windbracke, W. et al. | 1986
- 235
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Low pressure chemical vapor deposition boro‐hydro‐nitride films and their use in x‐ray masksDana, S. S. / Maldonado, J. R. et al. | 1986
- 240
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Stability of alignment marks for x‐ray masksAcosta, R. E. / Maldonado, J. R. / Fair, R. et al. | 1986
- 243
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A plasma x‐ray source for x‐ray lithographyOkada, I. / Saitoh, Y. / Itabashi, S. / Yoshihara, H. et al. | 1986
- 248
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Resolution limits in x‐ray lithography calculated by means of x‐ray lithography simulator XMASBetz, H. / Heinrich, K. / Heuberger, A. / Huber, H. / Oertel, H. et al. | 1986
- 253
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Sub‐100‐nm channel‐length transistors fabricated using x‐ray lithographyChou, S. Y. / Smith, Henry I. / Antoniadis, D. A. et al. | 1986
- 256
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Dry developed negative resist in synchrotron radiation lithographyTsuda, M. / Oikawa, S. / Yabuta, M. / Yokota, A. / Nakane, H. / Atoda, N. / Hoh, K. et al. | 1986
- 261
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Digital image processing for micrometrologyFrosien, J. et al. | 1986
- 265
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Analysis of pattern dimension accuracy in electron‐beam lithographySaitou, Norio / Okazaki, Shinji / Murai, Fumio / Ozasa, Susumu / Konishi, Tadao et al. | 1986
- 269
-
Applying optical methods to aid in linewidth control for the development of sub‐half‐micron geometriesRuby, Richard et al. | 1986
- 273
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The flip‐and‐shift signal enhancement application for a predictive electron‐beam pattern registration modelKing, D. C. / Steckl, A. J. / Morgenstern, J. L. / McDonald, J. F. / Bourgeois, M. A. / Yemc, D. J. / Elminyawi, I. et al. | 1986
- 280
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High speed flat guide ceramic stage for electron‐beam lithography systemTsuyuzaki, Haruo / Shimazu, Nobuo / Fujinami, Minpei et al. | 1986
- 285
-
An optical alignment microscope for x‐ray lithographyBobroff, N. / Tibbetts, R. / Wilczynski, J. / Wilson, A. et al. | 1986
- 290
-
Fabrication of bipolar transistors by maskless ion implantationReuss, Robert H. / Morgan, Damon / Goldenetz, Ann / Clark, William M. / Rensch, David B. / Utlaut, Mark et al. | 1986
- 295
-
Low temperature oxidation of silicon using a microwave plasma disk sourceRoppel, T. / Reinhard, D. K. / Asmussen, J. et al. | 1986
- 299
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New selective deposition technology by electron‐beam induced surface reactionMatsui, Shinji / Mori, Katsumi et al. | 1986
- 305
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Electron window cathode ray tube applicationsHanlon, L. / Greenstein, M. / Grossman, W. / Neukermans, A. et al. | 1986
- 310
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Excimer‐laser etching of diamond and hard carbon films by direct writing and optical projectionRothschild, M. / Arnone, C. / Ehrlich, D. J. et al. | 1986
- 315
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Hot jet etching of GaAs and SiGeis, M. W. / Efremow, N. N. / Lincoln, G. A. et al. | 1986
- 318
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Oxygen ion etching mechanism investigation by surface enhanced Raman scatteringAsada, Susumu / Mori, Katsumi et al. | 1986
- 322
-
Secondary effects in ion millingMoreno‐Marin, J. C. / Valles‐Abarca, J. A. / Gras‐Marti, A. et al. | 1986
- 326
-
Electronic and chemical analysis of fluoride interface structures at subnanometer spatial resolutionScheinfein, M. / Isaacson, M. et al. | 1986
- 333
-
Characteristics of maskless ion beam assisted etching of silicon using focused ion beamsOchiai, Yukinori / Shihoyama, Kazuhiko / Shiokawa, Takao / Toyoda, Koichi / Masuyama, Akio / Gamo, Kenji / Namba, Susumu et al. | 1986
- 337
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Anisotropic etching of Al by a directed Cl2 fluxEfremow, N. N. / Geis, M. W. / Mountain, R. W. / Lincoln, G. A. / Randall, J. N. / Economou, N. P. et al. | 1986
- 341
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Sub‐100‐nm‐wide, deep trenches defined by reactive ion etchingPang, S. W. / Randall, J. N. / Geis, M. W. et al. | 1986
- 345
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Selective removal of metal atoms in hydrogen reactive ion etchingHiraoka, H. et al. | 1986
- 349
-
Reactive ion etching of SiC thin films using fluorinated gasesSugiura, J. / Lu, W.‐J. / Cadien, K. C. / Steckl, A. J. et al. | 1986
- 355
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Focused ion beam etching of resist materialsHarakawa, K. / Yasuoka, Y. / Gamo, K. / Namba, S. et al. | 1986
- 358
-
Spatial quantization in GaAs–AlGaAs multiple quantum dotsReed, M. A. / Bate, R. T. / Bradshaw, K. / Duncan, W. M. / Frensley, W. R. / Lee, J. W. / Shih, H. D. et al. | 1986
- 361
-
Nanostructure fabrication in metals, insulators, and semiconductors using self‐developing metal inorganic resistKratschmer, E. / Isaacson, M. et al. | 1986
- 365
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Fabrication of sub‐100‐nm linewidth periodic structures for study of quantum effects from interference and confinement in Si inversion layersWarren, A. C. / Plotnik, I. / Anderson, E. H. / Schattenburg, M. L. / Antoniadis, D. A. / Smith, Henry I. et al. | 1986
- 369
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Self‐aligned dual surface lithographyKrusius, J. P. / Nulman, J. / Perera, A. et al. | 1986
- 375
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Comparison of NPN transistors fabricated with broad beam and spatial profiling using focused beam ion implantationChu, S. D. / Corelli, J. C. / Steckl, A. J. / Reuss, R. H. / Clark, W. M. / Rensch, D. B. / Morris, W. G. et al. | 1986
- 380
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Nanometer metal‐oxide‐semiconductor field‐effect transistors: A flexible tool for studying inversion layer physicsMankiewich, P. M. / Howard, R. E. / Jackel, L. D. / Skocpol, W. J. / Tennant, D. M. et al. | 1986
- 383
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Observation of h/e Aharonov–Bohm interference effects in submicron diameter, normal metal ringsUmbach, C. P. / Washburn, S. / Webb, R. A. / Koch, R. / Bucci, M. / Broers, A. N. / Laibowitz, R. B. et al. | 1986
- 386
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A novel negative electron‐beam resist with high resolution and high dry‐etching durability: Chloromethylated poly‐2‐isopropenylnaphthaleneAtoda, N. / Doi, H. / Kokubun, K. et al. | 1986
- 390
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Polyimide as a negative electron resist and its application in crossovers and metal on polymer mask fabricationPatrick, W. / Mackie, W. S. / Beaumont, S. P. / Wilkinson, C. D. W. et al. | 1986
- 394
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An optimized positive resist for electron‐beam direct writing: PER‐1Iida, Yasuo / Tanigaki, Katsumi et al. | 1986
- 398
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Electron‐beam investigation and use of Ge–Se inorganic resistChen, A. S. / Addiego, G. / Leung, W. / Neureuther, A. R. et al. | 1986
- 403
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Optimization of solvent development in radiation induced graft lithography of poly(methylmethacrylate)Kim, S. Y. / Choi, J. / Pulver, D. / Moore, J. A. / Corelli, J. C. / Steckl, A. J. / Randall, J. N. et al. | 1986
- 409
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New trilevel and bilevel resist systems using silyl ethers of novolak and low molecular weight resistKawazu, Ryuji / Yamashita, Yoshio / Ito, Toshio / Kawamura, Kazutami / Ohno, Seigo / Asano, Takateru / Kobayasi, Kenji / Nagamatsu, Gentaro et al. | 1986
- 414
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Methacrylated silicone‐based negative photoresist for high resolution bilayer resist systemsMorita, Masao / Tanaka, Akinobu / Onose, Katsuhide et al. | 1986
- 418
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Silver diffusion in Ag2Se/GeSe2 inorganic resist systemPolasko, K. J. / Tsai, C. C. / Cagan, M. R. / Pease, R. F. W. et al. | 1986
- 422
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Oxygen reactive ion etching of organosilicon polymersWatanabe, F. / Ohnishi, Y. et al. | 1986
- 426
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Resist hardening using a conformable moldLai, F. S. / Lin, B. J. / Vladimirsky, Y. et al. | 1986
- 430
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High performance positive photoresistsFuruta, A. / Hanabata, M. / Uemura, Y. et al. | 1986