Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks (English)
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In:
Applied Physics Letters
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109
, 17
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5
;
2016
- Article (Journal) / Electronic Resource
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Title:Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
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Contributors:Yoshida, S. ( author ) / Lin, D. ( author ) / Vais, A. ( author ) / Alian, A. ( author ) / Franco, J. ( author ) / El Kazzi, S. ( author ) / Mols, Y. ( author ) / Miyanami, Y. ( author ) / Nakazawa, M. ( author ) / Collaert, N. ( author )
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Published in:Applied Physics Letters ; 109, 17 ; 5
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Publisher:
- New search for: AIP Publishing LLC
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Publication date:2016-10-24
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 109, Issue 17
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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