Tantalum silicide Schottky contacts to GaAs (English)
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- New search for: Lee, C. P.
- New search for: Liu, T. H.
- New search for: Lei, T. F.
- New search for: Wu, S. C.
- New search for: Lee, C. P.
- New search for: Liu, T. H.
- New search for: Lei, T. F.
- New search for: Wu, S. C.
In:
Journal of Applied Physics
;
65
, 2
;
642-645
;
1989
- Article (Journal) / Electronic Resource
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Title:Tantalum silicide Schottky contacts to GaAs
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Contributors:
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Published in:Journal of Applied Physics ; 65, 2 ; 642-645
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Publisher:
- New search for: American Institute of Physics
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Publication date:1989-01-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 65, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 411
-
Analysis and assessment of electromagnetic ring expansion as a high‐strain‐rate testGourdin, William H. et al. | 1989
- 423
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Thermal fixing of holographic gratings in Bi12SiO20Arizmendi, L. et al. | 1989
- 428
-
Property of amplified spontaneous emission and saturable absorber for a terawatt XeCl laser systemWatanabe, M. / Endoh, A. / Sarukura, N. / Watanabe, S. et al. | 1989
- 433
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A model for evaluating the efficiency of an interdigital transducer for bulk wave excitation into liquidUrabe, Heijiro / Toda, Kohji et al. | 1989
- 438
-
Separation of surface and volume absorption by photothermal deflectionNie, Y.‐X. / Bertrand, L. et al. | 1989
- 448
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Extreme‐ultraviolet illumination effects on the PBFA‐I magnetically insulated ion diodeMaenchen, J. E. / Woodworth, J. R. / Mehlhorn, T. A. / Renk, T. / Ruiz, C. L. / Foltz, B. W. / Jaramillo, W. H. / Wenger, D. F. / Reyes, P. / Guidotti, K. et al. | 1989
- 464
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Anisotropy control in CF4 microwave plasma etchingPelletier, J. / Cooke, M. J. et al. | 1989
- 468
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Measurement of ion temperatures by means of Rutherford scattering of energetic neutrals above the limiting anglevan Blokland, A. A. E. / Donne´, A. J. H. et al. | 1989
- 474
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Interfacial reactions on annealing molybdenum‐silicon multilayersHolloway, Karen / Do, Khiem Ba / Sinclair, Robert et al. | 1989
- 481
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Fe implantation in In0.53Ga0.47As/InPRao, Mulpuri V. / Keshavarz‐Nia, N. R. / Simons, David S. / Amirtharaj, P. M. / Thompson, Phillip E. / Chang, Tao Y. / Kuo, Jenn Ming et al. | 1989
- 486
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Dual implant into GaAs with Si+ and Sn+ ionsShim, Tae Earn / Itoh, Tadatsugu et al. | 1989
- 491
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The scattering of x rays from nonideal multilayer structuresStearns, D. G. et al. | 1989
- 507
-
Radiation‐induced defect centers in glass ceramicsTsai, T. E. / Friebele, E. J. / Griscom, D. L. / Pannhorst, W. et al. | 1989
- 515
-
On the behavior of interaction of a Pt‐related center with radiation‐induced defects and the trace platinum detectionWeng, Y. M. / Ohta, E. / Sakata, M. et al. | 1989
- 519
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Defect production during ion implantation of various AIIIBV semiconductorsWesch, W. / Wendler, E. / Go¨tz, G. / Kekelidse, N. P. et al. | 1989
- 527
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High‐speed liquid‐crystal modulators using transient nematic effectWu, Shin‐Tson / Wu, Chiung‐Sheng et al. | 1989
- 533
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The effects of target compliance on liquid drop impactField, J. E. / Dear, J. P. / Ogren, J. E. et al. | 1989
- 541
-
Deuterium magnetic resonance study of orientation and poling in poly(vinylidene fluoride) and poly(vinylidene fluoride‐co‐tetrafluoroethylene)Doverspike, Montee A. / Conradi, Mark S. / DeReggi, Aime S. / Cais, R. E. et al. | 1989
- 548
-
Spin‐on and boat diffusion of Zn into InP and InGaAs grown by metalorganic vapor‐phase epitaxy and liquid‐phase epitaxyKo¨nig, U. / Haspeklo, H. / Marschall, P. / Kuisl, M. et al. | 1989
- 553
-
Interstitial and substitutional Zn in InP and InGaAsPvan Gurp, G. J. / van Dongen, T. / Fontijn, G. M. / Jacobs, J. M. / Tjaden, D. L. A. et al. | 1989
- 561
-
Stability of interfacial oxide layers during silicon wafer bondingAhn, K.‐Y. / Stengl, R. / Tan, T. Y. / Go¨sele, U. / Smith, P. et al. | 1989
- 564
-
Substrate effect on the deposition of Zn3P2 thin films prepared by a hot‐wall methodFuke, Shunro / Imai, Tetsuji / Kawasaki, Kazushige / Kuwahara, Kazuhiro et al. | 1989
- 564
-
Substrate effect on the deposition of Zn32 thin films prepared by a hot-wall methodShunro Fuke / Tetsuji Imai / Kazushige Kawasaki / Kazuhiro Kuwahara et al. | 1989
- 567
-
A quantitative study of oxygen behavior during CrSi2 and TiSi2 formationJiang, H. / Whitlow, H. J. / O¨stling, M. / Niemi, E. / d’Heurle, F. M. / Petersson, C. S. et al. | 1989
- 575
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Plasma deposition of hydrogenated amorphous silicon: Effect of rf powerKuznetsov, V. I. / van Oort, R. C. / Metselaar, J. W. et al. | 1989
- 575
-
Plasma deposition of hydrogenated amorphous silicon. Effect of if powerKuznetsov, V.J. / Oort, R.C. van / Metselaar, J.W. et al. | 1989
- 581
-
Initial epitaxial growth of Cu on Mo{011} by low‐energy electron microscopy and photoemission electron microscopyMundschau, M. / Bauer, E. / S´wiec&hook;h, W. et al. | 1989
- 585
-
Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputteringRao, T. Sudersena / Halpin, C. / Webb, J. B. / Noad, J. P. / McCaffrey, J. et al. | 1989
- 591
-
Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substratesSugo, Mitsuru / Uchida, Naoto / Yamamoto, Akio / Nishioka, Takashi / Yamaguchi, Masafumi et al. | 1989
- 596
-
Native acceptor levels in Ga‐rich GaAsBugajski, M. / Ko, K. H. / Lagowski, J. / Gatos, H. C. et al. | 1989
- 600
-
A new family of thermal donors generated around 450 °C in phosphorus‐doped Czochralski siliconKamiura, Yoichi / Hashimoto, Fumio / Yoneta, Minoru et al. | 1989
- 606
-
Effects of rapid thermal processing on electron traps in molecular‐beam‐epitaxial GaAsKitagawa, Akio / Usami, Akira / Wada, Takao / Tokuda, Yutaka / Kano, Hiroyuki et al. | 1989
- 612
-
Determination of band offsets and effective masses in quantum wells using optical dataCohen, R. M. / Fang, Z. M. et al. | 1989
- 619
-
Electrical properties of TiO2 films deposited by a reactive‐ionized cluster beamFukushima, K. / Yamada, I. et al. | 1989
- 619
-
Electrical properties of TiO2 films deposited by a reacitve-ionized cluster beamFukushima, K. / Yamada, I. et al. | 1989
- 624
-
Excited confined quantum states in CdMnTe‐CdTe superlatticesHarper, R. L. / Bicknell, R. N. / Blanks, D. K. / Giles, N. C. / Schetzina, J. F. / Lee, Y. R. / Ramdas, A. K. et al. | 1989
- 629
-
Compositional study of ultrathin rapidly reoxidized nitrided oxidesHori, Takashi / Iwasaki, Hiroshi / Ohmura, Takuichi / Samizo, Atsuko / Sato, Minoru / Yoshioka, Yoshiaki et al. | 1989
- 636
-
Study on the dependence of electrical properties on dislocation levels in InSb films vacuum deposited on glassIida, Shosan et al. | 1989
- 642
-
Tantalum silicide Schottky contacts to GaAsLee, C. P. / Liu, T. H. / Lei, T. F. / Wu, S. C. et al. | 1989
- 646
-
Defect‐related dielectric breakdown, charge trapping, and interface‐state generation of gate oxides grown on zone‐melting‐recrystallized silicon‐on‐insulator filmsLee, Chun‐Teh / Chen, Chenson K. et al. | 1989
- 651
-
Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structureMitsutsuka, S. / Okamoto, T. / Niitsuma, T. / Minagawa, S. et al. | 1989
- 662
-
Interface formation and thermal stability of Sn overlayers grown on cubic SiC(100)Niles, David W. / Ho¨chst, Hartmut / Zajac, G. W. / Fleisch, T. H. / Johnson, B. C. / Meese, J. M. et al. | 1989
- 662
-
Interface formation and thermal stability of Sn oxerlayers grown on cubic SiC (100)Niles, D.W. / Hoechst, H. / Zajac, G.W. / Fleisch, T.H. / Johnson, B.C. / Meese, J.M. et al. | 1989
- 668
-
Structure and electrical properties of interfaces between silicon films and n+ silicon crystalsOgawa, Shin‐ichi / Okuda, Seiji / Yoshida, Takehito / Kouzaki, Takashi / Tsukamoto, Kazuyoshi / Sinclair, Robert et al. | 1989
- 672
-
Electrical and optical properties of Cu‐ and Ga‐doped Hg1−xCdxTe layers grown by liquid‐phase epitaxySarusi, G. / Zemel, A. / Eger, D. / Shapira, Yoram et al. | 1989
- 677
-
Effects of phonon confinement on electron transport in superlatticesShigekawa, Naoteru / Mizutani, Takashi / Yokoyama, Kiyoyuki et al. | 1989
- 684
-
Effect of room‐temperature stress on the critical current of NbTiBray, S. L. / Ekin, J. W. et al. | 1989
- 688
-
Modeling the microwave properties of the YBa2Cu3O7−x superconductorsGittleman, J. I. / Matey, J. R. et al. | 1989
- 688
-
Modelling the microwave properties of the YBa2Cu3O(7-x) superconductorsGittleman, J.I. / Matey, J.R. et al. | 1989
- 692
-
Low‐frequency noise of planar dc SQUIDs made of various Josephson junctionsMatsuda, M. / Matachi, A. / Kuriki, S. / Hasegawa, H. et al. | 1989
- 697
-
Fluorescence extended x‐ray absorption fine structure study of silicon in neodymium iron boron rare‐earth magnetsBrennan, S. / Bienenstock, A. / Keem, J. E. et al. | 1989
- 704
-
Permanent magnetic materials based on Nd2Fe14C prepared by melt spinningCoehoorn, R. / Duchateau, J. P. W. B. / Denissen, C. J. M. et al. | 1989
- 710
-
A simultaneous electron paramagnetic resonance and optical absorption study of ultraviolet‐induced defect centers in Ge‐doped silica fibersSchwartz, Robert N. / Blair, G. Richard et al. | 1989
- 715
-
The electroelastic constants of quartz determined by the resonator methodHruska, Carl K. / Brendel, Remi et al. | 1989
- 718
-
Elastic and vibrational properties of nickel films measured by surface Brillouin scatteringJorna, R. / Visser, D. / Bortolani, V. / Nizzoli, F. et al. | 1989
- 726
-
Optical characterization of two‐dimensional charge density in GaAs‐(Al0.3Ga0.7As) multiple quantum wellsLiu, D. W. / Brody, E. M. / Chi, J. et al. | 1989
- 730
-
Absorption cross sections in the far‐IR spectrum of elemental shallow donors and acceptors in germaniumRotsaert, E. / Clauws, P. / Vennik, J. / Van Goethem, L. et al. | 1989
- 736
-
Photoluminescence investigation of the 1.356 eV band and stoichiometry in undoped GaAsShin, K. C. / Kwark, M. H. / Choi, M. H. / Oh, M. H. / Tak, Y. B. et al. | 1989
- 742
-
Application of nuclear magnetic resonance pore structure analysis to porous silica glassD’Orazio, F. / Tarczon, J.C. / Halperin, W. P. / Eguchi, K. / Mizusaki, T. et al. | 1989
- 752
-
High‐speed video observation of laser recrystallization for semiconductor‐on‐insulator fabricationOgura, Atsushi / Aizaki, Naoaki / Terao, Hiroshi et al. | 1989
- 755
-
Observations of adhesion‐induced deformations between spheroidal gold particles and conducting substratesRimai, D. S. / DeMejo, L. P. / Bowen, R. C. et al. | 1989
- 760
-
The effects of dopant and impurity redistributions on WSi2 formation by rapid thermal processingSiegal, Michael P. / Santiago, Jorge J. et al. | 1989
- 767
-
Surface microanalytical study on the tribological interface between the sputtered fluoropolymer film and a sliding ballSugimoto, Iwao / Miyake, Shojiro et al. | 1989
- 775
-
Low‐temperature surface cleaning method using low‐energy reactive ionized speciesYamada, Hiroshi et al. | 1989
- 782
-
Electron‐beam‐induced acoustic‐wave enhancement of gaseous combustionBidwell, S. W. / Bosch, R. A. / Gilgenbach, R. M. et al. | 1989
- 792
-
Laser photodissociation of chlorine and methyl chloride on low‐temperature silicon substratesKawasaki, Masahiro / Sato, Hiroyasu / Nishi, Nobuyuki et al. | 1989
- 799
-
Si‐depth profiling with Rutherford backscattering in photoresist layers; a study on the effects of degradationvan IJzendoorn, L. J. / Schellekens, J. P. W. et al. | 1989
- 805
-
Localized energy pulse trains launched from an open, semi‐infinite, circular waveguideShaarawi, Amr M. / Besieris, Ioannis M. / Ziolkowski, Richard W. et al. | 1989
- 814
-
Electron wave optics in semiconductorsGaylord, T. K. / Brennan, K. F. et al. | 1989
- 821
-
Theory of the quantum well emission transistorGrinberg, A. / Kastalsky, A. et al. | 1989
- 830
-
A non‐Markovian model of avalanche gain statistics for a solid‐state photomultiplierLaViolette, Randall A. / Stapelbroek, M. G. et al. | 1989
- 837
-
Dynamic current oscillations in a metal‐oxide‐semiconductor surface potential wellLou, L. F. et al. | 1989
- 842
-
The effect of molecular‐beam‐epitaxial growth conditions on the electrical characteristics of In0.52Al0.48As/In0.53Ga0.47As resonant tunneling diodesOh, J. E. / Mehdi, I. / Pamulapati, J. / Bhattacharya, P. K. / Haddad, G. I. et al. | 1989
- 846
-
Arsenic‐rich melt effect on threshold voltage scattering for Si‐implanted GaAs metal‐semiconductor field‐effect transistorSaito, Y. et al. | 1989
- 851
-
Experimental vortex transitional nondestructive read‐out Josephson memory cellTahara, Shuichi / Ishida, Ichiro / Ajisawa, Yumi / Wada, Yoshifusa et al. | 1989
- 857
-
Pb2CrO5 thin‐film photodetector array for contact‐type line‐image sensorsToda, Kohji / Yoshida, Shinzo et al. | 1989
- 861
-
Phase locking of high‐power microwave oscillatorsWoo, W. / Benford, J. / Fittinghoff, D. / Harteneck, B. / Price, D. / Smith, R. / Sze, H. et al. | 1989
- 867
-
Nonalloyed and alloyed low‐resistance ohmic contacts with good morphology for GaAs using a graded InGaAs cap layerMehdi, I. / Reddy, U. K. / Oh, J. / East, J. R. / Haddad, G. I. et al. | 1989
- 870
-
Chemical oxygen iodine laser of extremely high efficiencyYoshida, S. / Endo, M. / Sawano, T. / Amano, S. / Fujii, H. / Fujioka, T. et al. | 1989
- 872
-
The thickness dependency of the dielectric constant in certain thin‐film dielectricsFeldman, Charles et al. | 1989
- 874
-
Temperature dependence of the band gaps of red HgI2Lo´pez‐Cruz, Eli´as et al. | 1989
- 877
-
Thermal analysis of the Bi‐Sr‐Ca‐Cu‐O system by an electrical propertyPark, Jin Seong / Kim, Ho Gi et al. | 1989
- 879
-
Interaction of a fluxon with an inductance step in a long Josephson junctionKivshar, Yuri S. / Malomed, Boris A. et al. | 1989