Ultrafast all-optical switch using complex refractive index changes of thin films containing photochromic dye (English)
National licence
- New search for: Sasaki, Kyoichi
- New search for: Nagamura, Toshihiko
- New search for: Sasaki, Kyoichi
- New search for: Nagamura, Toshihiko
In:
Applied Physics Letters
;
71
, 4
;
434-436
;
1997
- Article (Journal) / Electronic Resource
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Title:Ultrafast all-optical switch using complex refractive index changes of thin films containing photochromic dye
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Contributors:Sasaki, Kyoichi ( author ) / Nagamura, Toshihiko ( author )
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Published in:Applied Physics Letters ; 71, 4 ; 434-436
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Publisher:
- New search for: American Institute of Physics
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Publication date:1997-07-28
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 71, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 425
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Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperatureSun, C.-K. / Chiu, T.-L. / Keller, S. / Wang, G. / Minsky, M. S. / DenBaars, S. P. / Bowers, J. E. et al. | 1997
- 428
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Preparation and characterization of sol-gel derived Er3+: Al2O3–SiO2 planar waveguidesBenatsou, M. / Capoen, B. / Bouazaoui, M. / Tchana, W. / Vilcot, J. P. et al. | 1997
- 431
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Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glassDanesh, P. / Pantchev, B. et al. | 1997
- 434
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Ultrafast all-optical switch using complex refractive index changes of thin films containing photochromic dyeSasaki, Kyoichi / Nagamura, Toshihiko et al. | 1997
- 437
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Use of solid electrolytic erosion for generating nano-aperture near-field collectorsMulin, David / Courjon, Daniel / Malugani, Jean-Pierre / Gauthier-Manuel, Bernard et al. | 1997
- 440
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Electrically pumped tunable terahertz emitter based on intersubband transitionXu, Bin / Hu, Qing / Melloch, Michael R. et al. | 1997
- 443
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Active mode locking of a p-Ge hot hole laserHovenier, J. N. / Muravjov, A. V. / Pavlov, S. G. / Shastin, V. N. / Strijbos, R. C. / Wenckebach, W. Th. et al. | 1997
- 446
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An optically addressed modulator based on low-temperature-grown multiple quantum well GaAlAsTayebati, Parviz / Hantzis, Christos / Canoglu, Ergun / Sacks, Robert N. et al. | 1997
- 449
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THz optical beat frequency generation from a single mode locked semiconductor laserPelusi, M. D. / Liu, H. F. / Novak, D. / Ogawa, Y. et al. | 1997
- 452
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Demonstration of a micro far-infrared Smith–Purcell emitterGoldstein, M. / Walsh, J. E. / Kimmitt, M. F. / Urata, J. / Platt, C. L. et al. | 1997
- 455
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Optical metastability in bulk GaN single crystalsShmagin, I. K. / Muth, J. F. / Lee, J. H. / Kolbas, R. M. / Balkas, C. M. / Sitar, Z. / Davis, R. F. et al. | 1997
- 458
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Aspect ratio independent etching of dielectricsHwang, Gyeong S. / Giapis, Konstantinos P. et al. | 1997
- 461
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Switching behavior of surface stabilized ferroelectric liquid crystals induced by pulse voltagesSako, Teiyu / Itoh, Nobuyuki / Sakaigawa, Akira / Koden, Mitsuhiro et al. | 1997
- 464
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Bulk amorphous alloys with high mechanical strength and good soft magnetic properties in Fe–TM–B (TM=IV–VIII group transition metal) systemInoue, Akihisa / Zhang, Tao / Takeuchi, Akira et al. | 1997
- 467
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Thermal stability of Ir/polycrystalline-Si structure for bottom electrode of integrated ferroelectric capacitorsJeon, Yoo-Chan / Seon, Jeong-Min / Joo, Jae-Hyun / Oh, Ki-Young / Roh, Jae-Sung / Kim, Jae-Jeong / Kim, Dae-Sik et al. | 1997
- 470
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Powder diffraction from compressed molecular hydrogen in a diamond-anvil cellBesedin, Stanislav P. / Jephcoat, Andrew P. / Hanfland, Michael / Ha¨usermann, Daniel et al. | 1997
- 473
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Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxyBrandt, Oliver / Yang, Hui / Trampert, Achim / Wassermeier, Matthias / Ploog, Klaus H. et al. | 1997
- 473
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Optimized growth conditions for the epitaxial nucleation of b-GaN on GaAs(001) by molecular beam epitaxyBrandt, Oliver et al. | 1997
- 476
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Fracture toughness and fatigue-crack propagation in a Zr–Ti–Ni–Cu–Be bulk metallic glassGilbert, C. J. / Ritchie, R. O. / Johnson, W. L. et al. | 1997
- 479
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Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxyJalonen, Marko / Toivonen, Mika / Savolainen, Pekka / Ko¨nga¨s, Jukka / Pessa, Markus et al. | 1997
- 482
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Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatmentsTo¨pper, K. / Bruns, J. / Scheer, R. / Weber, M. / Weidinger, A. / Bra¨unig, D. et al. | 1997
- 485
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The effect of nitrogen ions emitted from a plasma source on molecular beam epitaxial growth of p-ZnSe:NKimura, K. / Miwa, S. / Kajiyama, H. / Yasuda, T. / Kuo, L. H. / Jin, C. G. / Tanaka, K. / Yao, T. et al. | 1997
- 488
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Laser emission from photonic dotsRo¨hner, M. / Reithmaier, J. P. / Forchel, A. / Scha¨fer, F. / Zull, H. et al. | 1997
- 491
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Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regimeCiesla, C. M. / Murdin, B. N. / Phillips, T. J. / White, A. M. / Beattie, A. R. / Langerak, C. J. G. M. / Elliott, C. T. / Pidgeon, C. R. / Sivananthan, S. et al. | 1997
- 494
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AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layerChen, Ching-Hui / Ibbetson, James P. / Hu, Evelyn L. / Mishra, Umesh K. et al. | 1997
- 497
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Far-infrared study of a laterally confined electron gas formed by molecular beam epitaxial regrowth on a patterned (100) n+-GaAs substrateArnone, D. D. / Cina, S. / Burroughes, J. H. / Holmes, S. N. / Burke, T. / Hughes, H. P. / Ritchie, D. A. / Pepper, M. et al. | 1997
- 500
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Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopyLau, W. S. / Zhong, L. / Lee, Allen / See, C. H. / Han, Taejoon / Sandler, N. P. / Chong, T. C. et al. | 1997
- 503
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The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopyDalfors, J. / Lundstro¨m, T. / Holtz, P. O. / Radamson, H. H. / Monemar, B. / Wallin, J. / Landgren, G. et al. | 1997
- 506
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Deep level capture barrier in molecular beam epitaxial grown AlAsySb1−y measured by isothermal capacitance transient spectroscopyJohnstone, D. K. / Yeo, Y. K. / Hengehold, R. L. / Turner, G. W. et al. | 1997
- 509
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Novel wet chemical etch for nanostructures based on II-VI compoundsOsinsky, A. / Qiu, Y. / Mahan, J. / Temkin, H. / Gurevich, S. A. / Nesterov, S. I. / Tanklevskaia, E. M. / Tretyakov, V. / Lavrova, O. A. / Skopina, V. I. et al. | 1997
- 512
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Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layersKitabayashi, H. / Waho, T. / Yamamoto, M. et al. | 1997
- 515
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Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectorsPerera, A. G. U. / Shen, W. Z. / Mallard, W. C. / Tanner, M. O. / Wang, K. L. et al. | 1997
- 518
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High voltage GaInP/GaAs dual-material Schottky rectifiersSchoen, K. J. / Harmon, E. S. / Woodall, J. M. / Chin, T. P. et al. | 1997
- 521
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Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dotsSa´far, G. A. M. / Rodrigues, W. N. / Cury, L. A. / Chacham, H. / Moreira, M. V. B. / Freire, S. L. S. / de Oliveira, A. G. et al. | 1997
- 524
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Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopyHacke, P. / Okushi, H. et al. | 1997
- 527
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Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)Marchand, H. / Desjardins, P. / Guillon, S. / Paultre, J.-E. / Bougrioua, Z. / Yip, R. Y.-F. / Masut, R. A. et al. | 1997
- 530
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Microwave measurement of shot noise in resonant tunneling diodesPrzadka, A. / Webb, K. J. / Janes, D. B. / Liu, H. C. / Wasilewski, Z. R. et al. | 1997
- 533
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Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substratesChichibu, Shigefusa / Nakanishi, Hisayuki / Shirakata, Sho / Isomura, Shigehiro / Miyake, Hideto / Sugiyama, Koichi et al. | 1997
- 536
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Current-density enhancements of the highest-Tc superconductors with GeV protonsThompson, J. R. / Krusin-Elbaum, L. / Christen, D. K. / Song, K. J. / Paranthaman, M. / Ullmann, J. L. / Wu, J. Z. / Ren, Z. F. / Wang, J. H. / Tkaczyk, J. E. et al. | 1997
- 539
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Switching fields and magnetostatic interactions of thin film magnetic nanoelementsKirk, K. J. / Chapman, J. N. / Wilkinson, C. D. W. et al. | 1997
- 542
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Photothermal approach to magnetoresistance monitoring in magnetic multilayersRoger, J. P. / Boccara, A. C. / Valet, T. et al. | 1997
- 545
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Study of shear force between glass microprobe and mica surface under controlled humidityOkajima, Takaharu / Hirotsu, Shunsuke et al. | 1997
- 548
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Preparation of piezoelectric-coefficient modulated multilayer film ZnO/Al2O3 and its ultrahigh frequency resonanceHu, W. S. / Liu, Z. G. / Wu, R. X. / Chen, Y.-F. / Ji, W. / Yu, T. / Feng, D. et al. | 1997
- 551
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Velocity distributions of molecules ejected in laser ablationZhigilei, Leonid V. / Garrison, Barbara J. et al. | 1997
- 554
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Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition processLee, J. S. / Liu, K. S. / Lin, I. N. et al. | 1997
- 557
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Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors [Appl. Phys. Lett. 68, 1972 (1996)]Joshi, R. P. / McAdoo, J. A. et al. | 1997
- 557
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Erratum: “Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors” [Appl. Phys. Lett. 68, 1972 (1996)]Joshi, R. P. / McAdoo, J. A. et al. | 1997
- 558
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Erratum: “Cathodoluminescence study of GaAs quantum wells and of submicron dots fabricated by magnetron reactive ion etching” [Appl. Phys. Lett. 70, 408 (1997)]Chao, L.-L. / Cargill, G. S. / Levy, M. / Osgood, R. M. / McLane, G. F. et al. | 1997
- 558
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Cathodoluminescence study of GaAs quantum wells and of submicron dots fabricated by magnetron reactive ion etching [Appl. Phys. Lett. 70, 408 (1997)]Chao, L.-L. / Cargill, G. S. / Levy, M. / Osgood, R. M. / McLane, G. F. et al. | 1997
- 558
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A room-temperature silicon single-electron metal-oxide semiconductor memory with nanoscale floating-gate and ultranarrow channel [Appl. Phys. Lett. 70, 850 (1997)]Guo, L. / Leobandung, E. / Chou, S. Y. et al. | 1997
- 558
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Erratum: "A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel" (Appl. Phys. Lett. 70, 850 (1997))Guo, Lingjie et al. | 1997
- 559
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CUMULATIVE AUTHOR INDEX| 1997